WO2018038375A1 - Appareil de dépôt de couche atomique et procédé de dépôt de couche atomique utilisant ledit appareil de dépôt de couche atomique - Google Patents

Appareil de dépôt de couche atomique et procédé de dépôt de couche atomique utilisant ledit appareil de dépôt de couche atomique Download PDF

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WO2018038375A1
WO2018038375A1 PCT/KR2017/006695 KR2017006695W WO2018038375A1 WO 2018038375 A1 WO2018038375 A1 WO 2018038375A1 KR 2017006695 W KR2017006695 W KR 2017006695W WO 2018038375 A1 WO2018038375 A1 WO 2018038375A1
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Prior art keywords
gas supply
atomic layer
gas
supply module
supply unit
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PCT/KR2017/006695
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English (en)
Korean (ko)
Inventor
오기영
최학영
최영태
김동원
김상훈
김근식
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주식회사 넥서스비
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Publication of WO2018038375A1 publication Critical patent/WO2018038375A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Definitions

  • the present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method using the same, and more particularly, to an atomic layer deposition apparatus for depositing a high quality atomic layer in a spatial division method and an atomic layer deposition method using the same.
  • a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes chemical reactions between gas molecules.
  • an atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product by chemical reaction between the source materials is deposited on the substrate surface by adsorbing onto the substrate and then injecting a gas containing another source material into the process chamber.
  • One technical problem to be solved by the present invention is to provide an atomic layer deposition apparatus and a method for atomic layer deposition using the same to ensure high productivity while providing a high quality thin film.
  • the first deposition is performed as the stage on which a plurality of deposition target substrates including a first deposition target substrate and a second deposition target substrate is seated rotates in a first direction.
  • the first atomic layer is deposited on the target substrate through the first gas supply module, and the second gas supply module is disposed on the second deposition target substrate and spaced apart from the first gas supply module in an annular direction.
  • the exhaust gas for exhausting the reaction gas or source gas located between the reaction gas supply unit and the purge gas supply unit or between the source gas supply unit and the purge gas supply unit. It may include. Accordingly, the exhaust port according to the embodiment of the present invention can prevent the mixing of the atomic layer deposition gas due to the rotation of the stage, it is possible to provide a high quality thin film.
  • FIG 3 is a view for explaining an atomic layer deposition apparatus according to a second embodiment of the present invention.
  • FIG. 5 is a view for explaining an atomic layer deposition apparatus according to a third embodiment of the present invention.
  • FIG. 6 is a view for explaining the atomic layer deposition method according to a first embodiment of the present invention.
  • FIG. 7 and 8 are views for explaining the atomic layer deposition method according to a first embodiment of the present invention in detail.
  • FIG. 9 is a view for explaining the atomic layer deposition method according to a second embodiment of the present invention.
  • 10 to 12 are other views for explaining the atomic layer deposition method according to a second embodiment of the present invention in detail.
  • first, second, and third are used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment.
  • first component in one embodiment may be referred to as a second component in another embodiment.
  • second component in another embodiment.
  • Each embodiment described and illustrated herein also includes its complementary embodiment.
  • the term 'and / or' is used herein to include at least one of the components listed before and after.
  • connection is used herein to mean both indirectly connecting a plurality of components, and directly connecting.
  • the atomic layer deposition apparatus may form various atomic layers.
  • at least one thin film layer among a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer may be formed.
  • the source gas for forming the metal thin film layer is one of Tri Methyl Aluminum (TMA), Tri Ethyl Aluminum (TEA), and Di Methyl Aluminum Chloride (DMACl), and the reaction gas is oxygen gas and ozone. It may be one of the gases.
  • FIG. 1 is a view for explaining the atomic layer deposition equipment according to a first embodiment of the present invention
  • Figure 2 is a view for explaining the A-A 'cross section of the atomic layer deposition equipment according to a first embodiment of the present invention.
  • FIG. 2 shows a cross-sectional view assuming that W1 of FIG. 1 is located below the gas supply module 100.
  • the gas supply module 100 may be symmetrical with respect to the center line of the stage 180. That is, the gas supply module 100 may be integrally formed between one end and the other end of the stage 180 by passing through the center line of the stage 180.
  • the stage 180 may rotate (R) the seated deposition target substrates W1. W2. W3. W4. Accordingly, since the deposition target substrates W1. W2. W3. W4 pass under the gas supply module 100 by the rotation of the stage 180, the deposition target substrates W1. W2 are supplied with the atomic layer deposition gas. W3. W4) may be deposited with an atomic layer thin film.
  • the stage 180 is circular, but may be of a different shape.
  • the substrate to be deposited is circular like the wafer, it may be a different shape.
  • the source gas supply unit 132b, the first and second purge gas supply units 110a and 110b, and the first and second reaction gas supply units 132a and 132c may be rotated in a deposition target substrate. Can be disposed along.
  • each gas supply unit 115a, 132a, 110a, 132b, 110b, 132c, 115b of the gas supply module may be configured to spray more deposition gas from the periphery than the center of the stage 180.
  • the injection holes of the gas supply units 115a, 132a, 110a, 132b, 110b, 132c, and 115b of the gas supply module may be larger at the periphery than the center of the stage 180. This takes into account that when the angular velocities of the stage are the same, the linear velocity of the periphery located radially outward is greater than the center of the stage. As a result, a uniform atomic layer thin film may be deposited in the region of the substrate to be deposited located at the center of the stage 180 or the region of the substrate to be deposited positioned at the periphery of the stage 180.
  • an exhaust port for exhausting the injected source gas may be disposed on one side of the source gas supply unit 132b. More specifically, exhaust ports 134b and 136b for exhausting the source gas injected from the source gas supply part 132b may be directly adjacent to both sides of the source gas supply part 132b. The exhaust ports 134b and 136b may recover the injected source gas in a direction opposite to the injection direction, thereby preventing the source gas from entering another region other than the selected injection region.
  • the exhaust ports 134a, 136a, 134b, 136b, 134c, and 136c may communicate with a bar dry pump 170.
  • the reaction gas and / or the source gas out of the corresponding spatial division region of the substrate may be exhausted from the reaction gas and / or the source gas injected by the top pumping method. .
  • each region of the deposition target substrate W1 can be provided with a source gas, a purge gas, a reaction gas, and a purge gas while passing through the regions A0, A1, A2, A3, A4, A5, and A6. Therefore, an atomic layer thin film may be deposited on the deposition target substrate W1.
  • the deposition target substrate W1 passes through the gas supply module 100 twice, and as the stage rotates once, two atomic layers are deposited on the deposition target substrate. Can be.
  • the atomic layer deposition apparatus through the first and second outer purge gas supply unit (115a, 115b), it is possible to minimize the mixing of the gas by the stage rotation. Since the first outer purge gas supply unit 115a is disposed outside the first reaction gas supply unit 132a, the reaction gas injected from the first reaction gas supply unit 132a is moved outward of the gas supply module 100. Can be prevented. In addition, since the second outer purge gas supply unit! 15b is disposed outside the second reaction gas supply unit 132c, the reaction gas injected from the second reaction gas supply unit 132c is supplied to the gas supply module 100. It can be prevented from being provided outward.
  • the spatial division type atomic layer deposition process may be performed as the plurality of deposition target substrates are rotated. Accordingly, the conventional spatial division atomic layer deposition apparatus requires additional space such as a loading space, a deposition space, and an unloading space with respect to the substrate to be deposited, but according to the first embodiment of the present invention, This can be dramatically reduced, resulting in a foot print of the equipment.
  • FIG 3 is a view for explaining the atomic layer deposition equipment according to a second embodiment of the present invention
  • Figure 4 is a view for explaining a cross-section B-B 'of the atomic layer deposition equipment according to a second embodiment of the present invention.
  • the first to fourth gas supply modules 200a, 200b, 200c, and 200d may deposit the same type or different types of atomic layer thin films.
  • the first and third gas supply modules 200a and 200c and the second and fourth gas supply modules 200b and 200d may provide an atomic layer deposition gas to deposit different atomic layer thin films.
  • the first to fourth gas supply modules 200a, 200b, 200c, and 200d may provide a deposition gas to deposit the same kind of atomic layer thin film.
  • the stage 280 may rotate the deposition target substrate (W1. W2. W3. W4). Accordingly, since the deposition target substrates W1. W2. W3. W4 pass through the gas supply modules 200a, 200b, 200c, and 200d by the rotation of the stage 180, the deposition target substrates W1. W2. W3. W4), an atomic layer thin film can be deposited. In addition, when the stage 180 is rotated once, four atomic layer thin films may be deposited on each substrate to be deposited by four gas supply modules.
  • stage 180 it is assumed that four substrates to be deposited are seated on the stage 180, but a mounting part may be provided to allow a smaller or larger number of substrates to be deposited.
  • stage 180 is assumed to be circular in the reference to FIG. 3, it may be a different shape.
  • first to fourth gas supply modules 200a, 200b, 200c, and 200d have configurations that correspond to each other only in positions, the following description will be made based on the first gas supply module 200a.
  • first outer purge gas supply unit 215a, the first reaction gas supply unit 232a, the first purge gas supply unit 210a, the source gas supply unit 232b, the second purge gas supply unit 210b, The second reaction gas supply unit 232c and the second outer purge gas supply unit 215b may be disposed in this order.
  • each gas supply portion 215a, 232a, 210a, 232b, 210b, 232c, 215b of the first gas supply module may be configured to inject more deposition gas from the periphery than the center of the stage 280.
  • the injection holes of the gas supply units 215a, 232a, 210a, 232b, 210b, 232c, and 215b of the first gas supply module may be larger at the periphery than the center of the stage 280. This takes into account that when the angular velocities of the stage are the same, the linear velocity of the periphery located radially outward is greater than the center of the stage.
  • a predetermined atomic layer thin film may be deposited in the region of the substrate to be deposited located at the center of the stage 280 or the region of the substrate to be deposited positioned at the periphery of the stage 280.
  • an exhaust port for exhausting the injected reaction gas may be disposed on one side of the first reaction gas supply unit 232a and the second reaction gas supply unit 232c. More specifically, exhaust ports 234a and 236a for exhausting the reaction gas injected from the first reaction gas supply unit 232a may be directly adjacent to both sides of the first reaction gas supply unit 232a. The exhaust ports 234a and 236a may recover the injected reaction gas in a direction opposite to the injection direction, thereby preventing the reaction gas from entering another region other than the selected injection region. In addition, exhaust ports 234c and 236c for exhausting the reaction gas injected from the second reaction gas supply unit 232c may be directly adjacent to both sides of the second reaction gas supply unit 232c. The exhaust ports 234c and 236c may recover the injected reaction gas in a direction opposite to the injection direction, thereby preventing the reaction gas from entering another region other than the selected injection region.
  • the exhaust ports 234a, 236a, 234b, 236b, 234c, and 236c may communicate with a bar dry pump 270.
  • the bar dry pump 270 By driving the bar dry pump 270, the reactive gas and / or the source gas out of the space-divided region of the substrate among the injected reactive gas and / or the source gas may be exhausted.
  • the exhaust ports 234a and 236a disposed at both sides of the first reaction gas supply unit 232a may exhaust the reaction gas entering the outside of the A1 region, and may be provided at both sides of the source gas supply unit 232b.
  • the disposed exhaust ports 234b and 236b may exhaust source gas entering the outside of the A3 region, and the exhaust ports 234c and 236c disposed on both sides of the second reactive gas supply unit 232c may enter the outside of the A5 region.
  • the reaction gas can be exhausted. Accordingly, since the mixing between the deposition gases is prevented, a high quality thin film can be provided.
  • the first gas supply module 200a may also be driven in the same manner as the second to fourth gas supply modules 200b, 200c, and 200d.
  • each region of the deposition target substrate W1 can be provided with a source gas, a purge gas, a reaction gas, and a purge gas while passing through the regions A0, A1, A2, A3, A4, A5, and A6. Therefore, an atomic layer thin film may be deposited on the deposition target substrate W1.
  • the atomic layer deposition apparatus through the first and second outer purge gas supply unit (215a, 215b), it is possible to minimize the mixing of the gas due to the stage rotation. Since the first outer purge gas supply unit 215a is disposed outside the first reaction gas supply unit 232a, the reaction gas injected from the first reaction gas supply unit 232a may cause the reaction of the first gas supply module 200a to occur. It can be prevented from being provided to the outside. In addition, since the second outer purge gas supply unit 215b is disposed outside the second reaction gas supply unit 232c, the reaction gas injected from the second reaction gas supply unit 232c may be supplied to the first gas supply module 200a. Can be provided to the outside.
  • FIG. 5 is a view for explaining an atomic layer deposition apparatus according to a third embodiment of the present invention.
  • the third embodiment of the present invention is different from the first embodiment of the present invention in that the gas supply module of the first embodiment of the present invention described above is disposed adjacent to each other.
  • the third embodiment of the present invention can also be applied to the second embodiment of the present invention described above. In this case, as the stage rotates once, eight atomic layer thin films may be deposited.
  • FIGS. 7 and 8 are diagrams illustrating the implementation of the atomic layer deposition method according to the first embodiment through the atomic layer deposition apparatus according to the first embodiment of the present invention.
  • step S110 the deposition target substrate W1 is further rotated (in the R direction), and a second atomic layer is formed on the deposition target substrate W1 through the gas supply module 100. Can be deposited.
  • the deposition target substrate W1 is formed in a state in which the deposition target substrate W1 is located at the lower right side of the gas supply module 100 (FIG. 8A), as the stage 180 rotates (in the R direction), the deposition target substrate W1 is formed.
  • a source gas, a purge gas, a reaction gas, and a purge gas may be provided in a space division manner. Accordingly, after the deposition target substrate W1 passes through the gas supply module 100 (FIG. 8B), a second atomic layer may be deposited on the deposition target substrate W1.
  • FIGS. 10 to 12 are diagrams illustrating the implementation of the atomic layer deposition method according to the second embodiment through the atomic layer deposition apparatus according to the second embodiment of the present invention.
  • a source gas, a purge gas, a reaction gas and a purge gas may be provided in a space division manner through the first gas supply module 200a. Accordingly, after the deposition target substrate W1 passes through the first gas supply module 200a (FIG. 10B), a first atomic layer may be deposited on the deposition target substrate W1.
  • the deposition target substrate W2 is used.
  • a source gas, a purge gas, a reaction gas and a purge gas may be provided in a space division method through the second gas supply module 200b. Accordingly, after the deposition target substrate W2 passes through the second gas supply module 200b (FIG. 10B), a second atomic layer may be deposited on the deposition target substrate W2. In this case, the first and second atomic layers may be deposited simultaneously.
  • the first and second atomic layers may be the same kind of atomic layers.
  • the first and second atomic layers may be different kinds of atomic layers.
  • the atomic layer thin film may be deposited on the substrates W3 and W3.
  • a source gas, a purge gas, a reaction gas and a purge gas may be provided in a space division method through the third gas supply module 200c. Accordingly, after the deposition target substrate W2 passes through the third gas supply module 200c (FIG. 12B), a third atomic layer may be deposited on the deposition target substrate W2. In this case, the third atomic layer may be deposited simultaneously with the second atomic layer.
  • the atomic layer deposition apparatus and the atomic layer deposition method according to the embodiments of the present invention may be applied as a deposition technique for semiconductors, displays, and energy devices.

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de dépôt de couche atomique. Selon un mode de réalisation de la présente invention, un dispositif de dépôt de couche atomique comprend : un module d'alimentation en gaz pour une pulvérisation simultanée, en différentes zones d'un substrat à déposer, de gaz pour dépôt de couche atomique comprenant un gaz source, un gaz de purge et un gaz de réaction ; et une platine agencée sur un côté du module d'alimentation en gaz, et comportant une partie de montage sur laquelle le substrat à déposer est monté, lorsque la platine tourne une fois, au moins deux couches de couches atomiques pouvant être déposées sur le substrat à déposer.
PCT/KR2017/006695 2016-08-26 2017-06-26 Appareil de dépôt de couche atomique et procédé de dépôt de couche atomique utilisant ledit appareil de dépôt de couche atomique WO2018038375A1 (fr)

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KR1020160108987A KR101885525B1 (ko) 2016-08-26 2016-08-26 원자층 증착 장비 및 그를 이용한 원자층 증착 방법
KR10-2016-0108987 2016-08-26

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