WO2013191471A1 - Appareil et procédé de dépôt de couches atomiques - Google Patents

Appareil et procédé de dépôt de couches atomiques Download PDF

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Publication number
WO2013191471A1
WO2013191471A1 PCT/KR2013/005416 KR2013005416W WO2013191471A1 WO 2013191471 A1 WO2013191471 A1 WO 2013191471A1 KR 2013005416 W KR2013005416 W KR 2013005416W WO 2013191471 A1 WO2013191471 A1 WO 2013191471A1
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WO
WIPO (PCT)
Prior art keywords
shower head
substrate
precursor
atomic layer
purge gas
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Application number
PCT/KR2013/005416
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English (en)
Korean (ko)
Inventor
정인권
Original Assignee
주식회사 엠티에스나노테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from KR1020120134150A external-priority patent/KR20130142869A/ko
Application filed by 주식회사 엠티에스나노테크 filed Critical 주식회사 엠티에스나노테크
Priority to JP2015518335A priority Critical patent/JP2015525302A/ja
Publication of WO2013191471A1 publication Critical patent/WO2013191471A1/fr
Priority to US14/570,217 priority patent/US20150096495A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Definitions

  • the present invention relates to a thin film deposition apparatus, and more particularly, to an atomic layer deposition apparatus and method for depositing an atomic layer on a substrate.
  • Atomic layer deposition is widely used as a method of depositing thin films on semiconductor wafers, and has been widely applied as a method of depositing thin films on CIGS solar cell substrates, Si solar cell substrates, and OLED display substrates.
  • a typical atomic layer deposition process consists of four steps with one cycle as follows.
  • a source precursor for example, trimethyl-aluminum (TMA) is sprayed onto the substrate.
  • TMA trimethyl-aluminum
  • the raw material precursor reacts with the surface of the substrate to coat the substrate surface with the first reaction layer.
  • an inert gas such as nitrogen is injected onto the substrate to remove the raw material precursor that is physically adsorbed on the substrate surface.
  • a reactant precursor for example H 2 O
  • the reaction precursor reacts with the first reaction layer to coat the substrate surface with the second reaction layer.
  • an inert gas is injected onto the substrate to remove the reaction precursor physically adsorbed on the substrate surface.
  • a single layer thin film composed of a first reaction layer and a second reaction layer, for example, an Al 2 O 3 thin film is deposited on a substrate. The cycle is repeated to obtain a thin film of the desired thickness.
  • the deposition rate of the thin film by the atomic layer deposition method is determined by the time required for the cycle consisting of the four steps, and the thin film deposition rate is slow because the supply of the precursor precursor, the purge gas, the reaction precursor, and the purge gas must be sequentially performed. have.
  • FIG. 1 is a side view of an atomic layer deposition apparatus by a space division method.
  • a purge gas injection port 21, an exhaust port 22, a raw material precursor injection port 23, an exhaust port 24, a purge gas injection port 25, an exhaust port 26, and a reaction precursor injection port are illustrated.
  • a shower head 20 composed of 27 is provided, and the raw material precursor and the reaction precursor are sequentially coated on the substrate 50 by passing the substrate 50 under the shower head 20.
  • the gas injection ports 21, 23, 25, and 27 and the exhaust ports 22, 24, and 26 are sequentially disposed along the first direction, which is the transfer direction of the substrate 50, as shown in FIG. 1.
  • the raw material precursor injected from the raw material precursor injection port 23 is exhausted through the adjacent exhaust ports 22 and 24, and the reaction precursor injected from the reaction precursor injection port 27 is exhausted through the exhaust port 26.
  • the purge gas injected from the purge gas injection port 25 is exhausted through the adjacent exhaust ports 24 and 26.
  • the substrate 50 When the substrate 50 is flexible, the substrate 50 may be rolled and used as shown in FIGS. 2 and 3. 2 and 3 are side and top views, respectively, of an apparatus for depositing an atomic layer on a flexible substrate.
  • the substrate 50 After installing the roll 50a on which the substrate 50 on which the atomic layer is to be deposited is wound with the shower head 20 interposed therebetween, and the roll 50b on which the substrate on which the atomic layer is deposited are wound, the substrate 50 is mounted.
  • the raw material precursor and the reaction precursor may be sequentially coated on the substrate 50 by penetrating under the shower head 20 along a first direction perpendicular to the width 50w of the substrate.
  • the gas injection ports 21, 23, 25, and 27 and the exhaust ports 22, 24, and 26 are sequentially disposed along the first direction, which is the moving direction of the substrate 50.
  • the gas injection port and the exhaust port are arranged to extend along a direction parallel to the width 50w of the substrate as shown in FIG. Therefore, in the roll-to-roll method, the shower head 20 has to be provided along the first direction by the number of atomic layers to be deposited, so that the size of the equipment increases. For example, 100 sets of shower heads 20 must be provided to deposit 100 atomic layers.
  • the shower head 20 when the shower head 20 is not provided as many as the number of atomic layers to be deposited, the winding and rewinding of the substrate must be repeated, thereby increasing the possibility of particles and scratches.
  • the raw material precursor and the reaction precursor are configured to be sprayed onto the substrate at the same time, particles may occur when they meet and undergo a gas phase reaction during high-speed movement of the substrate.
  • the substrate 50 is made of a material that transmits gas
  • the raw material precursor, the reaction precursor, and the purge gas injected from the shower head 20 pass through the substrate 50 and are transmitted to the opposite side of the shower head 50. It is difficult to recover them again through the exhaust ports 22, 24, 28 and 28 of the shower head 20. That is, it becomes difficult to exhaust through the exhaust ports 22, 24, 26, 28 of the shower head 20 while maintaining the state separated spatially by the purge gas so that the raw material precursor and the reaction precursor do not mix.
  • atomic layer deposition requires an apparatus and method capable of depositing as many atomic layers on a substrate as possible while having a small equipment size. There is also a need for an apparatus and method capable of depositing the desired number of atomic layers on a substrate with only one winding, without repeating winding and rewinding of the substrate.
  • atomic layer deposition requires an apparatus and method capable of depositing an atomic layer at a high rate without increasing the transfer speed of the substrate.
  • atomic layer deposition requires an atomic layer deposition apparatus and method designed to meet a raw material precursor and a reaction precursor group so that a gas phase reaction does not occur.
  • the substrate is made of a material that transmits gas, it requires an atomic layer deposition apparatus and method designed to exhaust the raw material precursor, the reaction precursor, and the purge gas ejected from the shower head.
  • the problem to be solved by the present invention is to provide an atomic layer deposition apparatus and method capable of depositing an atomic layer at a high speed while having a small equipment size.
  • An object of the present invention is to provide an atomic layer deposition apparatus and method capable of depositing an atomic layer at a high speed while the transport speed of the substrate is low.
  • An object of the present invention is to provide an atomic layer deposition apparatus and method capable of depositing as many atomic layers as desired with only one winding without repeating winding and rewinding of the substrate in this respect.
  • the problem to be solved by the present invention is to provide an atomic layer deposition apparatus and method designed to prevent the problem of mixing the precursor precursor and the reaction precursor in this respect.
  • the problem to be solved by the present invention is to provide an atomic layer deposition apparatus and method capable of well exhausting the raw material precursor, the reaction precursor and the purge gas in depositing the atomic layer on a substrate made of a material that transmits gas in this respect. It is.
  • the present invention is to spray the raw material precursor and the reaction precursor to the substrate while the shower head is reciprocating, the reaction precursor is not sprayed from the shower head while the precursor is injected from the shower head, the reaction precursor is sprayed from the shower head During which no raw material precursor is injected from the shower head.
  • the shower head sprays a raw material precursor onto a substrate while moving from a first position to a second position, and sprays a reaction precursor onto the substrate while moving from the second position to the first position. Therefore, the problem that a raw material precursor and a reaction precursor mix can be prevented.
  • the present invention is characterized in that the moving distance of the shower head, for example, the distance between the first and second positions, is as short as the pitch of the arrangement of the at least one spray units of the shower head.
  • the present invention when spraying the raw material precursor or the reaction precursor to the substrate at the same time spraying the purge gas through the shower head, and immediately after the injection of the injected purge gas and the raw material precursor or the reaction precursor It is characterized in that the exhaust through the shower head.
  • the present invention when spraying the raw material precursor or the reaction precursor to the substrate at the same time spraying the purge gas through the shower head, and immediately after the injection of the injected purge gas and the raw material precursor or the reaction precursor And may be configured to exhaust through an exhaust plate disposed opposite the shower head with a substrate therebetween. Accordingly, the present invention provides a means for depositing an atomic layer on a substrate comprised of a material that permeates a gas.
  • an atomic layer deposition apparatus includes a substrate transfer apparatus configured to transfer a substrate along a first direction; A first material injection port configured to spray a first material and extending along a second direction, configured to spray a second material configured to react with the first material to form a reaction layer and extending along the second direction A shower head having at least one injection unit having a second material injection port, a purge gas injection port configured to inject a purge gas, and extending along the second direction, and an exhaust port extending along the second direction; And a shower head transport device configured to reciprocate the shower head between a first position and a second position along the first direction.
  • first direction and the second direction may be vertical, and the second direction may be a width direction of the substrate.
  • the interval between the first position and the second position may be an arrangement interval of the at least one injection unit.
  • the distance between the first position and the second position may be greater than the distance between the first and second material injection holes of the at least one injection unit.
  • the number of atomic layers deposited on the substrate may be adjusted by controlling the speed at which the substrate moves along the first direction.
  • the number of atomic layers deposited on the substrate may be adjusted by adjusting the speed at which the shower head reciprocates along the first direction.
  • the atomic layer deposition apparatus further comprises a second shower head, the second shower head is disposed in front of the shower head, the second shower head is for spraying the first material A first material injection port, wherein the first material injection port of the second shower head extends along the second direction.
  • the atomic layer deposition apparatus further comprises a second shower head, the second shower head is disposed behind the shower head, the second shower head is for spraying the first material A first material injection port, wherein the first material injection port of the second shower head extends along the second direction.
  • the atomic layer deposition apparatus has a roller configured to support a substrate, the shower head is disposed adjacent to the roller, the spray nozzle surface of the shower head is curved along the circumferential direction of the roller Form.
  • the second direction is parallel to the axis of rotation of the roller and the shower head pivots reciprocally along the circumferential direction.
  • the first material, the second material and the purge gas are simultaneously injected and exhausted while the shower head is reciprocating along the first direction.
  • the second material is not sprayed while the first material is sprayed while the shower head is reciprocating along the first direction, and the first material is sprayed while the second material is sprayed. Do not be sprayed.
  • the shower head while the shower head is moved from the first position to the second position, only the purge gas is injected and exhausted without spraying the first material and the second material, and the shower head is discharged.
  • the first material, the second material and the purge gas are injected and exhausted while moving from the second position to the first position.
  • an atomic layer deposition apparatus includes a substrate transfer apparatus configured to transfer a substrate along a first direction; A first material injection port configured to spray a first material and extending along the first direction, configured to spray a second material configured to react with the first material to form a reaction layer and to extend along the first direction A shower head having at least one spraying unit having a second material spraying hole configured to spray a purge gas, the purging gas spraying hole extending along the first direction, and an exhaust port extending along the first direction; And a shower head conveying device configured to reciprocate the shower head between a first position and a second position along a second direction.
  • the first direction and the second direction is vertical.
  • the second direction is a width direction of the substrate.
  • the spacing between the first position and the second position is an arrangement spacing of the at least one injection unit.
  • the spacing between the first position and the second position is greater than the spacing between the first and second material ejection openings of the at least one injection unit.
  • the atomic layer deposition apparatus may adjust the number of atomic layers deposited on the substrate by adjusting a speed at which the substrate is transferred along the first direction.
  • the atomic layer deposition apparatus may adjust the number of atomic layers deposited on the substrate by adjusting a speed at which the shower head reciprocates along the second direction.
  • the atomic layer deposition apparatus further comprises a second shower head, the second shower head is disposed in front of the shower head, the second shower head is for spraying the first material A first material injection port, wherein the first material injection port of the second shower head extends along the second direction.
  • the atomic layer deposition apparatus further comprises a second shower head, the second shower head is disposed behind the shower head, the second shower head is for spraying the first material A first material injection port, wherein the first material injection port of the second shower head extends along the second direction.
  • the atomic layer deposition apparatus has a roller configured to support the substrate, the shower head is disposed adjacent to the roller, the spray nozzle surface of the shower head along the circumferential direction of the roller It is composed of curved surface.
  • the second direction is a circumferential direction of the roller and the shower head linearly reciprocates in a direction parallel to the axis of rotation.
  • the first material, the second material and the purge gas are simultaneously injected and exhausted while the shower head is reciprocating along the second direction.
  • the second material is not sprayed while the first material is sprayed while the shower head is reciprocating along the second direction, and the first material is not sprayed while the second material is sprayed. Do not be sprayed.
  • the shower head while the shower head is moved from the first position to the second position, only the purge gas is injected and exhausted without spraying the first material and the second material, and the shower head is discharged.
  • the first material, the second material and the purge gas are injected and exhausted while moving from the second position to the first position.
  • an atomic layer deposition apparatus includes a substrate transfer apparatus configured to transfer a substrate along a first direction; And a first material injection port configured to spray a first material onto the substrate, the first material injection port extending along a second direction, and a second material configured to react with the first material to form a reaction layer onto the substrate. And a second material injection hole that extends along the second direction, a purge gas injection hole that extends along the second direction and extends along the second direction, and the first and second materials and the purge gas.
  • a shower head having a spray unit configured to exhaust and having an exhaust port extending along the second direction, wherein the first material, the substrate while the substrate passes between the second material spray port and the exhaust port; And are sequentially and repeatedly exposed to the purge gas, the second material and the purge gas.
  • the first direction and the second direction is vertical.
  • the second direction is a width direction of the substrate.
  • the number of atomic layers deposited on the substrate may be adjusted by controlling the speed at which the substrate moves along the first direction.
  • the number of atomic layers deposited on the substrate may be adjusted by adjusting the time and period at which the first material, the purge gas, the second material, and the purge gas are injected.
  • the shower head of the atomic layer deposition apparatus is configured to spray the first material onto the substrate and extends along a second direction, the first material spraying hole onto the substrate.
  • a second material injection hole configured to spray and extending along the second direction
  • a purge gas injection hole configured to spray purge gas onto the substrate and extending along the second direction
  • a second injection unit configured to exhaust purge gas and having an exhaust port extending along the second direction.
  • the exhaust port of the second injection unit is disposed adjacent to the exhaust port of the first injection unit, the first and second material injection port and the purge gas injection port of the second injection unit is It is disposed opposite the first injection unit with the exhaust port of the second injection unit therebetween.
  • the exhaust port of the second injection unit and the exhaust port of the first injection unit is the same.
  • the substrate is sequentially and repeatedly to the first material, the purge gas, the second material and the purge gas while passing between the exhaust port and the second material injection port of the second injection unit. Configured to be exposed.
  • the atomic layer deposition apparatus includes a substrate support in the form of a roller, the shower head is disposed adjacent to the substrate support in the form of a roller, the gas injection surface of the shower head is the circumference of the roller Therefore, it is configured to have a curved shape.
  • an atomic layer deposition apparatus includes a first material injection port configured to spray a first material onto a substrate, and a second material configured to react with the first material to form a reaction layer on the substrate.
  • a first injection unit having a second material injection port configured to inject a gas, a purge gas injection port configured to inject purge gas onto the substrate, and an exhaust port configured to exhaust the first and second materials and the purge gas
  • a shower head having a second injection unit having a configuration similar to that of the first injection unit, wherein an exhaust port of the second injection unit is disposed adjacent to the exhaust port of the first injection unit, and the second injection unit
  • the first and second material injection holes and the purge gas injection port of the unit are disposed opposite the first injection unit with the exhaust port of the second injection unit in between.
  • the exhaust port of the second injection unit and the exhaust port of the first injection unit is the same.
  • the atomic layer deposition apparatus is configured to sequentially spray the first material, the purge gas, the second material and the purge gas through the shower head.
  • an atomic layer deposition apparatus includes a substrate transfer apparatus configured to transfer a substrate along a first direction; A first material injection port configured to inject a first material onto the substrate, a second material injection port configured to inject a second material configured to react with the first material to form a reaction layer, and a purge gas A shower head having at least one injection unit having a purge gas injection hole configured to spray the substrate; And a shower head moving device configured to reciprocate the shower head between a first position and a second position along a second direction, wherein the shower head is disposed while the first material is sprayed in the reciprocating process. And does not spray a second material, and does not spray the first material while the second material is being sprayed.
  • the injection unit of the shower head may be provided with at least one exhaust port, and the first and second materials and the purge gas may be configured to be exhausted through the at least one exhaust port.
  • the atomic layer deposition apparatus is disposed opposite the shower head with the substrate interposed therebetween and is configured to exhaust the first and second materials and the purge gas injected from the shower head. It may be provided.
  • the substrate may be made of a material that transmits gas.
  • the first direction and the second direction are vertical.
  • the first direction and the second direction are the same direction.
  • the interval between the first position and the second position is an arrangement interval of the at least one injection unit.
  • the spacing between the first position and the second position is greater than the spacing between the first and the second material injection holes of the at least one injection unit.
  • the method for depositing an atomic layer includes a first material injection hole for injecting a first material onto a substrate, and a second material for reacting with the first material to form a reaction layer onto the substrate.
  • the shower head may spray the purge gas onto the substrate in the first moving step and the second moving step.
  • the first and second materials and the purge gas injected from the shower head in the first moving step and the second moving step may be exhausted through an exhaust port provided in the shower head.
  • the first and second materials and the purge gas injected from the shower head in the first moving step and the second moving step are disposed opposite the shower head with the substrate interposed therebetween.
  • the exhaust port can be exhausted.
  • the substrate may be made of a material that transmits gas.
  • the shower head is moved from the first position to the second position in the first moving step, and the shower head is moved from the second position to the first position in the second moving step. do.
  • the shower head is moved from the first position to the second position in both the first and second movement steps.
  • the shower head further includes a third moving step of moving from the second position to the first position, wherein the first and second materials are sprayed from the shower head in the third moving step. It doesn't work.
  • the shower head may spray the purge gas to the substrate in the third moving step.
  • the interval between the first position and the second position is an arrangement interval of the at least one injection unit.
  • the spacing between the first position and the second position is greater than the spacing between the first and the second material injection holes of the at least one injection unit.
  • the number of atomic layers deposited on the substrate may be adjusted by adjusting the speed at which the substrate is transported along the first direction.
  • the number of atomic layers deposited on the substrate may be adjusted by adjusting the speed at which the shower head reciprocates along the second direction.
  • the substrate is supported by a circular roller
  • the shower head is disposed adjacent to the roller
  • the shower head is pivotally reciprocating along the circumferential direction of the roller and the first and second materials Is sprayed onto the substrate.
  • the substrate is supported by a circular roller
  • the shower head is disposed adjacent to the roller
  • the shower head is reciprocating along a direction parallel to the axis of rotation of the roller and the first and A second material is sprayed onto the substrate.
  • an atomic layer deposition apparatus and method capable of depositing an atomic layer at a high speed while having a small equipment size.
  • an atomic layer deposition apparatus and method capable of depositing an atomic layer at a high speed while the substrate has a low transfer speed.
  • an atomic layer deposition apparatus and method capable of depositing an atomic layer while fundamentally blocking the encounter between the raw material precursor and the reactive precursor.
  • the present invention it is possible to secure an apparatus and a method capable of depositing the desired number of atomic layers on a substrate by only one winding operation without repeating winding and rewinding of the substrate.
  • an atomic layer deposition apparatus and method capable of well evacuating a raw material precursor, a reaction precursor, and a purge gas.
  • FIG. 1 is a side view of an atomic layer deposition apparatus according to the prior art.
  • FIG. 2 is a side view of an atomic layer deposition apparatus according to the prior art
  • FIG 3 is a plan view of an atomic layer deposition apparatus according to the prior art.
  • FIG. 4 is a plan view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • 5 to 7 are flowcharts of atomic layer deposition in accordance with an embodiment of the present invention.
  • FIG. 8 is a plan view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 9 is a side view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 10 is a plan view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 11 is a side view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 12 is a plan view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 13 is a plan view of the exhaust plate of the atomic layer deposition apparatus according to the embodiment of the present invention.
  • FIG. 14 and 15 are cross-sectional views of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • 16 is a plan view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • 17 and 18 are cross-sectional views of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • the atomic layer deposition apparatus 100 includes a substrate 50 transfer device (not shown in FIG. 4) for transferring the substrate 50 along the first direction.
  • the substrate transfer apparatus is configured to adjust a transfer speed of the substrate 50.
  • the substrate 50 may be a flexible substrate having flexibility.
  • the atomic layer deposition apparatus 100 further includes a shower head 220.
  • the shower head 220 has at least one spray unit 120.
  • the injection unit 120 includes a raw material precursor injection hole 123 and a reaction precursor injection hole 127.
  • the injection unit 120 further includes at least one exhaust port 122 and 124 for exhausting the raw material precursor injected from the raw material precursor injection port 123.
  • the first exhaust port 122 and the second exhaust port 124 may be arranged to sandwich the raw material precursor injection port 123.
  • the injection unit 120 further includes at least one exhaust port 126 and 128 for exhausting the reaction precursor injected from the reaction precursor injection port 127.
  • the third exhaust port 126 and the fourth exhaust port 128 may be arranged to sandwich the reaction precursor injection port 127.
  • the injection unit 120 further includes at least one purge gas injection port 121 and 125.
  • the raw material precursor injection hole 123 may be disposed between the first purge gas injection hole 121 and the second purge gas injection hole 125, and the reaction precursor injection hole 127 may be the second purge gas injection hole 125 and the adjacent injection. It may be disposed between the first purge gas injection port 121 of the unit 120.
  • the purge gas injected from the purge gas injection holes 121 and 125 is used for purging the raw material precursor and the reaction precursor which are physically adsorbed on the substrate.
  • the gas injection holes 121, 123, 125 and 127 and the exhaust holes 122, 124, 126 and 128 of the injection unit 120 may be extended to be parallel to the width 50w of the substrate.
  • the width 50w of the substrate may be perpendicular to the first ′ direction, which is a transfer direction of the substrate.
  • the raw material precursor injected from the raw material precursor injection port 123 of the injection unit 120 and the reaction precursor injected from the reaction precursor injection port 127 are purge gas and exhaust ports injected from the purge gas injection ports 121 and 125 disposed therebetween. By the exhaust action by the 122, 124, 126 and 128 can be blocked from mixing with each other.
  • the atomic layer deposition apparatus 100 may further include a substrate support 55 disposed under the shower head 220.
  • the substrate support 55 may be provided with a heating device for heating the substrate 50.
  • the atomic layer deposition apparatus 100 may further include a shower head moving device (not shown in FIG. 4).
  • the shower head moving device is configured to reciprocate the shower head 220 between the first position 70 and the second position 72 along the second direction.
  • the shower head moving device 121 may be used as the shower head reciprocating device 121 described in Korean Patent Application No. 10-2012-0065954, which is incorporated herein by reference.
  • the second direction which is the moving direction of the shower head, may be the same direction as the first direction, which is the moving direction of the substrate 50. In one embodiment, the angle between the first direction and the second direction may be within 10 degrees.
  • the interval between the first position 70 and the second position 72 may be set to be equal to or greater than the interval X1 between the precursor precursor injection hole 123 and the reaction precursor injection hole 127 of the injection unit 120. have.
  • the interval between the first position 70 and the second position 72 is the spacing X of the spraying unit 120 or the spacing X between the raw material precursor spraying holes 123 of the neighboring spraying unit 120. May be less than or equal to
  • the interval between the first position 70 and the second position 72 may be larger than the arrangement interval X of the injection unit 120.
  • the arrangement interval X may be, for example, between 30 and 100 mm.
  • the arrangement interval X may be, for example, 30 mm or less.
  • the gas inlets 121, 123, 125 and 127 and the exhaust outlets 122, 124, 126 and 128 of the shower head 220 are connected to respective gas sources (not shown in FIG. 4) through a gas injection control device (not shown in FIG. 4). 4) and an exhaust pump (not shown in FIG. 4).
  • the gas spray control apparatus sprays the precursor precursor, the reactant precursor, and the purge gas onto the substrate 50 while the shower head 220 reciprocates between the first position 70 and the second position 72. And control the operation of evacuating the gases through the vents 122, 124, 126, and 128.
  • the shower head 220 deposits an atomic layer on the substrate 50 while reciprocating along the second direction. Referring to FIG. 4, the process of depositing an atomic layer on a substrate will be described with reference to an arbitrary point 50a on the substrate as an example.
  • any point 50a on the substrate 50 passes through the shower head 220, moving along the first direction. While the point 50a passes through the shower head 220, the point 50a is moved from the raw material precursor injection hole 123 of the shower head 220 by reciprocating movement of the shower head 220 in the second direction. It alternately exposes the raw material precursor to be injected, the purge gas to be injected from the purge gas injection ports 121, 125, and 129, and the reaction precursor to be injected from the reaction precursor injection port 127. Even when the point 50a is in a stopped state, the point 50a is alternately exposed to the raw material precursor, the purge gas, and the reaction precursor by the reciprocating movement of the shower head 220.
  • the atomic layer may be deposited on the dot 50a by the number of times exposed to the raw material precursor and the reaction precursor.
  • the point 50a it takes 10 seconds for the point 50a to pass through the shower head 220.
  • the shower head 220 performs 20 reciprocating motions in the second direction during the 10 seconds, the point 50a is used.
  • the point 50a takes 20 seconds to pass through the shower head 220, and the point 50a takes 40 reciprocating motions along the second direction during the 20 seconds. Up to 40 atomic layers can be deposited on 50a.
  • the arbitrary point 50a may be adjusted by adjusting the time taken for the arbitrary point 50a on the substrate 50 to pass through the shower head 220 or the feeding speed of the substrate 50.
  • the number of atomic layers deposited on the substrate may be controlled.
  • the number of times the shower head reciprocates along the second direction or the moving speed of the shower head while an arbitrary point 50a on the substrate 50 passes through the shower head 220 can be adjusted.
  • the number of atomic layers deposited on the point 50a is determined only by the number of injection units 120 provided in the shower head 220 regardless of the moving speed of the substrate 50. According to an embodiment of the present invention, a larger number of atomic layers may be deposited than the number of injection units 120 provided in the shower head 220. This is possible because the point 50a moves through the raw material precursor injection port 123 and the reaction precursor injection port 127 of the shower head 220 in addition to the raw material precursor injection port by the reciprocating movement of the shower head 220. This is because the fields 123 and the reaction precursor injection holes 127 may be alternately moved onto the point 50a.
  • the shower head 220 when the shower head 220 includes three injection units 120, three atoms are disposed on the point 50a while the point 50a penetrates the shower head once.
  • a layer is deposited, in accordance with an embodiment of the invention, three or more, for example, ten or more atomic layers may be deposited while the point 50a penetrates the shower head 220 once.
  • the atomic layer deposition apparatus 100 may further include a second shower head 120x disposed behind the shower head 220.
  • the second shower head 120x may be connected to the shower head 220 and configured to reciprocate along the second direction.
  • the second shower head 120x has a reaction precursor nozzle 127.
  • the second shower head 120x may further include at least one exhaust port 126 and 128 for exhausting the reaction precursor injected from the reaction precursor injection port 127.
  • the first exhaust port 126 and the second exhaust port 128 may be arranged to sandwich the reaction precursor injection port 127.
  • the second shower head 120x may further include at least one purge gas injection hole 125 and 129.
  • the reaction precursor injection hole 127 may be disposed between the first purge gas injection hole 125 and the second purge gas injection hole 129.
  • the gas nozzles 123, 125, and 127 and the exhaust ports 126 and 128 of the second shower head 120x have a width 50w of the substrate 50, similar to the gas nozzles and the exhaust ports of the shower head 220. Thus, it is provided to be expanded.
  • the second shower head 120x has a second shower when the surface coated with the precursor precursor and the surface coated with the reaction precursor are mixed on the surface of the substrate 50 on which the atomic layer is deposited while passing through the shower head 220.
  • the reaction precursor from the head 120x onto the substrate 50 By spraying the reaction precursor from the head 120x onto the substrate 50, the surface portion of the substrate coated with the raw material precursor can be converted into the surface coated with the reaction precursor.
  • the reaction precursor injection hole 127 of the second shower head 120x may be replaced with the raw material precursor injection hole 123.
  • the surface coated with the precursor precursor and the surface coated with the reaction precursor are mixed on the surface of the substrate 50 on which the atomic layer is deposited while passing through the shower head 220, the surface coated with the reaction precursor is formed. It can be converted to a surface coated with a raw precursor.
  • the second shower head 120x may be disposed in front of the shower head 220 of the atomic layer deposition apparatus 100. Or it can be placed both in front and in the back.
  • the second shower head 120x disposed in front may coat the surface of the substrate 50 before passing through the shower head 220 with a reaction precursor or a raw material precursor.
  • FIG. 5 is a flowchart of a method of depositing an atomic layer in the atomic layer deposition apparatus 100. 4 and 5, an embodiment of a method of depositing an atomic layer using the shower head 220 in the atomic layer deposition apparatus 100 includes the following steps.
  • the raw material precursor is injected through the raw material precursor injection hole 123 of the shower head 220, and at the same time, the reaction precursor is injected through the reaction precursor injection hole 127 to the substrate ( 50) and spray the purge gas onto the substrate 50 through at least one of the at least one purge gas nozzles 121 and 125, and at least one of the at least one exhaust ports 122, 124, 126, and 128. Evacuating the source precursor, the reaction precursor and the purge gas through one.
  • FIG. 6 is a flowchart of another method of depositing an atomic layer in the atomic layer deposition apparatus 100. 4 and 6, another embodiment of a method of depositing an atomic layer using the shower head 220 includes the following steps.
  • the precursor precursor is injected through the precursor precursor injection hole 123 of the shower head 220, and at the same time, the reaction precursor is injected through the reaction precursor injection hole 127 to the substrate ( 50) and spray the purge gas onto the substrate 50 through at least one of the at least one purge gas nozzles 121 and 125, and at least one of the at least one exhaust ports 122, 124, 126, and 128. Evacuating the raw material precursor, the reaction precursor and the purge gas through one.
  • the precursor consumption may be reduced by spraying only one of the forward and reverse movement processes. do.
  • a high speed valve may be added to control supply and blocking of the raw material and the reaction precursor at high speed.
  • FIG. 7 is a flowchart of another method of depositing an atomic layer in an atomic layer deposition apparatus 100. 4 and 7, another embodiment of a method of depositing an atomic layer using the shower head 220 includes the following steps.
  • a high speed valve may be added to control supply and blocking of the raw material and the reaction precursor at high speed.
  • the moving direction of the shower head 220 in the first moving step 702 and the second moving step 706 may be opposite directions.
  • the movement of the shower head 120 in the first movement step 702 is a movement from the first position 70 to the second position 72, and the movement of the shower head 120 in the second movement step. Is the movement from the second position 72 to the first position 70.
  • the moving direction of the shower head 220 in the first moving step 702 and the second moving step 706 may be the same direction.
  • the movement of the shower head 120 in the first movement step 702 is a movement from the first position 70 to the second position 72
  • the shower head 120 in the second movement step 706. Is also a movement from the first position 70 to the second position 72.
  • the raw material precursor and the reaction precursor are not sprayed from the shower head 220 onto the substrate 50 in the process of moving the shower head 220 from the second position 72 to the first position 70. Do not. However, the purge gas may be injected from the shower head 220 onto the substrate 50, and the purged gas may be exhausted through the shower head 220 again.
  • the second direction may be the same direction as the first direction.
  • the interval between the first position 70 and the second position 72 is set to be equal to or greater than the interval X1 between the precursor precursor injection hole 123 and the reaction precursor injection hole 127 of the shower head 120. Can be.
  • the interval between the first position 70 and the second position 72 may be equal to or smaller than the arrangement interval X of the injection unit 120.
  • the interval between the first position 70 and the second position 72 may be larger than the arrangement interval X of the injection unit 120.
  • 5, 6, and 7 may further include passing the second shower head 120x after the substrate 50 passes through the shower head 120.
  • the surface of the substrate 50 is coated with a reaction precursor or raw material precursor while passing through the second shower head 120x.
  • the embodiments may further include passing the second shower head 120x before the substrate 50 passes through the shower head 120.
  • the surface of the substrate 50 is coated with a reaction precursor or raw material precursor while passing through the second shower head 120x.
  • An atomic layer deposition apparatus 110 according to an embodiment of the present invention will be described with reference to FIG. 8. 8 is a plan view of the atomic layer deposition apparatus 110.
  • the atomic layer deposition apparatus 110 is similar to the atomic layer deposition apparatus 100 but has a different orientation and reciprocating direction of the shower head 220.
  • the shower head 220 is disposed in the atomic layer deposition apparatus 110 such that the gas injection holes 121, 123, 125, and 127 and the exhaust holes 122, 124, 126, and 128 extend in the third direction.
  • the third direction may be the same direction as the first direction which is a moving direction of the substrate 50.
  • the angle between the third direction and the first direction may be within 10 degrees.
  • the shower head 220 is configured to reciprocate between the first position 170 and the second position 172 along the fourth direction.
  • the fourth direction may be perpendicular to the first direction that is the substrate transfer direction.
  • the fourth direction may be the same direction as the width 50w of the substrate 50.
  • the angle between the fourth direction and the first direction may be between 80 degrees and 90 degrees.
  • the shower head 220 deposits an atomic layer on the substrate 50 while reciprocating along the fourth direction. Referring to FIG. 8, a process of depositing an atomic layer on a substrate will be described with reference to an arbitrary point 50a on the substrate as an example.
  • any point 50a on the substrate 50 passes through the shower head 220, moving along the first direction. While the point 50a passes through the shower head 220, the point 50a is moved from the raw material precursor injection hole 123 of the shower head 220 by reciprocating movement of the shower head 220 in the fourth direction. It alternately exposes the raw material precursor to be injected, the purge gas to be injected from the purge gas injection ports 121, 125, and 129, and the reaction precursor to be injected from the reaction precursor injection port 127. Accordingly, the atomic layer may be deposited on the dot 50a by the number of times exposed to the raw material precursor and the reaction precursor.
  • the point 50a may be exposed to the source precursor and the reaction precursor up to 20 times, and thus, up to 20 atomic layers may be deposited on the point 50a.
  • the point 50a takes 20 seconds to pass through the shower head 220, and the point 50a takes 40 reciprocating motions along the second direction during the 20 seconds. Up to 40 atomic layers may be deposited on 50a.
  • the arbitrary point 50a may be adjusted by adjusting the time taken for the arbitrary point 50a on the substrate 50 to pass through the shower head 220 or the feeding speed of the substrate 50.
  • the number of atomic layers deposited on the substrate may be controlled.
  • the number of times the shower head reciprocates along the fourth direction or the moving speed of the shower head while an arbitrary point 50a on the substrate 50 passes through the shower head 220 can be adjusted.
  • an embodiment of a method of depositing an atomic layer using the shower head 220 in the atomic layer deposition apparatus 110 includes the following steps.
  • the raw material precursor is injected through the raw material precursor injection hole 123 of the shower head 220, and at the same time, the reaction precursor is injected through the reaction precursor injection hole 127 to the substrate ( 50) and spray the purge gas onto the substrate 50 through at least one of the at least one purge gas nozzles 121 and 125, and at least one of the at least one exhaust ports 122, 124, 126, and 128. Evacuating the source precursor, the reaction precursor and the purge gas through one.
  • another embodiment of a method of depositing an atomic layer using the shower head 220 in the atomic layer deposition apparatus 110 includes the following steps.
  • the precursor precursor is injected through the precursor precursor injection hole 123 of the shower head 220, and at the same time, the reaction precursor is injected through the reaction precursor injection hole 127 to the substrate ( 50) and spray the purge gas onto the substrate 50 through at least one of the at least one purge gas nozzles 121 and 125, and at least one of the at least one exhaust ports 122, 124, 126, and 128. Evacuating the raw material precursor, the reaction precursor and the purge gas through one.
  • another embodiment of a method of depositing an atomic layer using the shower head 220 includes the following steps.
  • the moving direction of the shower head 220 in the first moving step 702 and the second moving step 706 may be opposite directions.
  • the movement of the shower head 120 in the first movement step 702 is a movement from the first position 70 to the second position 72, and the movement of the shower head 120 in the second movement step. Is the movement from the second position 72 to the first position 70.
  • the moving direction of the shower head 220 in the first moving step 702 and the second moving step 706 may be the same direction.
  • the movement of the shower head 120 in the first movement step 702 is a movement from the first position 70 to the second position 72
  • the shower head 120 in the second movement step 706. Is also a movement from the first position 70 to the second position 72.
  • the raw material precursor and the reaction precursor are not sprayed from the shower head 220 onto the substrate 50 in the process of moving the shower head 220 from the second position 72 to the first position 70. Do not. However, the purge gas may be injected from the shower head 220 onto the substrate 50, and the purged gas may be exhausted through the shower head 220 again.
  • the second direction may be the same direction as the first direction.
  • the interval between the first position 170 and the second position 172 is set to be equal to or larger than the interval X1 between the precursor precursor injection hole 123 and the reaction precursor injection hole 127 of the shower head 220. Can be.
  • the interval between the first position 170 and the second position 172 may be equal to or smaller than the arrangement interval X of the injection unit 120.
  • the interval between the first position 170 and the second position 172 may be larger than the arrangement interval X of the injection unit 120.
  • the atomic layer deposition apparatus 100 and 110 illustrated in FIGS. 4 and 8 may include a substrate support 55 in the form of a roller 130 as shown in FIG. 9.
  • 9 is a side view of the atomic layer deposition apparatus 100 and 110 having a substrate support 55 in the form of a roller 130.
  • the roller 130 may be configured to rotate the central axis 130c about the axis.
  • the substrate 50 is wound on the roller 130 and supported to face the shower head 220.
  • the substrate 50 is transferred along the first direction by a substrate transfer device (not shown in FIG. 9).
  • the gas injection hole surface 220a of the shower head 220 is disposed adjacent to the roller 130 and is configured as a curved surface along the circumference of the roller 130 to surround the roller 130.
  • the shower head 220 shown in FIG. 9 sprays precursor and purge gas onto the substrate 50 while pivoting reciprocatingly rotating 222 about the central axis 130c of the roller 130. Configured to exhaust. Accordingly, the pivot reciprocating rotational direction 222 becomes the reciprocating direction of the shower head 220 in the atomic layer deposition apparatus 100 illustrated in FIG. 9, that is, the second direction.
  • the gas injection holes of the shower head 220 are extended along the first direction, which is the transfer direction of the substrate, similarly to the atomic layer deposition apparatus 100 of FIG. 8.
  • the shower head 220 shown in FIG. 9 injects and exhausts precursor and purge gas onto the substrate 50 while linearly reciprocating along a direction 224 parallel to the central axis 130c of the roller 130. Is configured to. Accordingly, the linear reciprocating direction 224 becomes the reciprocating direction of the shower head 220 in the atomic layer deposition apparatus 110 shown in FIG. 9, that is, the fourth direction.
  • the atomic layer deposition method in the atomic layer deposition apparatuses 100 and 110 shown in FIG. 9 is similar to the atomic layer deposition method described with reference to FIGS. 4 to 8, and includes the injection hole surfaces 220a and the shower head 220. The difference is that 320a) is a curved surface.
  • the atomic layer deposition apparatus 300 may include a substrate transfer apparatus (not shown in FIG. 10) configured to transfer the substrate 50 in the first direction.
  • the first direction may be perpendicular to the width 50w of the substrate.
  • the atomic layer deposition apparatus 300 further includes a shower head 320 disposed adjacent to the substrate 50.
  • a substrate support 55 configured to support the substrate 50 may be disposed below the shower head 320.
  • the shower head 320 has a first spray unit 130.
  • the first injection unit 130 includes a raw material precursor injection port 123, a reaction precursor injection port 127, and an exhaust port 122 extending in the width 50w direction of the substrate 50.
  • the reaction precursor injection hole 127 may be disposed between the raw material precursor injection hole 123 and the exhaust port 122.
  • the raw material precursor injection port 123 may be disposed between the reaction precursor injection port 127 and the exhaust port 122.
  • the first injection unit 130 is configured to exhaust the raw material precursor and the reaction precursor injected from the raw material precursor injection port 123 and the reaction precursor injection port 127 through the exhaust port 122.
  • the first injection unit 130 further includes a purge gas injection hole 121 extending in the width 50w direction of the substrate 50.
  • the purge gas injection hole 121 may be disposed between the raw material precursor injection hole 123 and the reaction precursor injection hole 127.
  • the raw material precursor injection port 123 and the reaction precursor injection port 127 may be interposed between the exhaust port 122.
  • the first injection unit 130 may further include a second purge gas injection hole 125 extending in the width 50w direction of the substrate 50 and disposed between the reaction precursor 127 and the exhaust port 122.
  • the first injection unit 130 is configured such that purge gas injected from the purge gas injection ports 121 and 125 is exhausted through the exhaust port 122.
  • the spraying and exhausting of the precursor precursor, the purge gas, and the reaction precursor by the first spraying unit 130 of the shower head 320 may include the following four steps.
  • a raw material precursor injection step 800 for injecting the raw material precursor from the raw material precursor injection port 123 and exhausting it through the exhaust port 122;
  • reaction precursor injection step 804 for injecting the reaction precursor from the reaction precursor injection port 127 and evacuating through the exhaust port 122
  • a second purge step 806 which injects purge gas from the purge gas injection ports 121 or 121 and 125 and exhausts it through the exhaust port 122.
  • the raw material precursor spraying step 800 the raw material precursor moves to the exhaust port 122 through the space between the shower head 320 and the substrate 50, and the section Y1 between the raw material precursor spraying port 123 and the exhaust port 122.
  • the surface of the substrate 50 is coated with a raw material precursor.
  • the purge gas moves to the exhaust port 122 through the space between the shower head 320 and the substrate 50, and the section Y2 between the purge gas injection port 121 and the exhaust port 122. ) Is physically adsorbed on the surface of the substrate 50 to remain and purges the raw material precursor.
  • reaction precursor spraying step 804 the reaction precursor moves to the exhaust port 122 through the space between the shower head 320 and the substrate 50, and the section Y3 between the reaction precursor spray port 127 and the exhaust port 122.
  • the surface of the substrate 50 is coated with a reaction precursor.
  • the purge gas moves to the exhaust port 122 through the space between the shower head 320 and the substrate 50, and the section Y2 between the purge gas injection port 121 and the exhaust port 122. ) And remains physically adsorbed on the surface of the substrate 50 to purge the reaction precursor.
  • Any point 50a on the substrate 50 may be repeatedly exposed to the above four-step cycle while moving the section Y3 between the reaction precursor injection port 127 and the exhaust port 122.
  • a plurality of atomic layers may be deposited on the dot 50a by repeated exposure.
  • the point 50a may be exposed to the raw material precursor and the reaction precursor 20 times, and thus 20 atomic layers may be deposited on the point 50a.
  • the point 50a it takes 10 seconds for the point 50a to pass through the section Y3 between the reaction precursor injection port 127 and the exhaust port 122, and the four step cycle is repeated 40 times during the 10 seconds.
  • 40 atomic layers may be deposited on the point 50a.
  • the point 50a it takes 20 seconds for the point 50a to pass through the section Y3 between the reaction precursor injection port 127 and the exhaust port 122, and the four step cycle is repeated 40 times during the 20 seconds. Even in this case, 40 atomic layers may be deposited on the point 50a.
  • the arbitrary point 50a on the substrate 50 passes through the shower head 320 or the cycle time or the number of cycles of the four-step cycle.
  • the number of atomic layers deposited on 50a) can be controlled.
  • the shower head 320 of the atomic layer deposition apparatus 300 may further include a second spray unit 130a as shown in FIGS. 10 and 11.
  • the second injection unit 130a includes a raw material precursor injection port 123a, a reaction precursor injection port 127a, and an exhaust port 122a extending in the width 50w direction of the substrate 50.
  • the reaction precursor injection hole 127a may be disposed between the raw material precursor injection hole 123a and the exhaust opening 122a.
  • the raw material precursor injection port 123a may be disposed between the reaction precursor injection port 127a and the exhaust port 122a.
  • the second injection unit 130a is configured to exhaust the raw material precursor and the reaction precursor injected from the raw material precursor injection port 123a and the reaction precursor injection port 127a through the exhaust port 122a.
  • the second injection unit 130a further includes a purge gas injection hole 121a extending in the width 50w direction of the substrate 50.
  • the purge gas injection hole 121a may be disposed between the raw material precursor injection hole 123a and the reaction precursor injection hole 127a.
  • the raw material precursor injection port 123a and the reaction precursor injection port 127a may be interposed between the exhaust port 122a.
  • the second injection unit 130a may further include a second purge gas injection hole 125a extending in the width 50w direction of the substrate 50 and disposed between the reaction precursor 127a and the exhaust port 122a.
  • the second injection unit 130a is configured such that the purge gas injected from the purge gas injection holes 121a and 125a is exhausted through the exhaust port 122a.
  • the exhaust port 122a of the second injection unit 130a is disposed adjacent to the exhaust port 122 of the first injection unit 130, and the raw material precursor injection port 123a and the reaction precursor injection port of the second injection unit 130a ( 127a and the purge gas injection holes 121a and 125a may be disposed opposite to the first injection unit 130 with the exhaust hole 122a interposed therebetween.
  • the exhaust port 122a of the second injection unit 130a may be replaced with the exhaust port 122 of the first injection unit 130. That is, the exhaust port 122a of the second injection unit 130a may be integrated with the exhaust port 122 of the first injection unit 130.
  • the second injection unit 130a is configured to repeat the cycles of the four steps 800, 802, 804 and 806 similarly to the first injection unit 130.
  • the raw material precursor spraying step 800 the raw material precursor is sprayed simultaneously from the raw material precursor spraying hole 123 of the first spraying unit 130 and the raw material precursor spraying hole 123a of the second spraying unit 130a. do.
  • the purge gas injection holes 121 and 125 of the first injection unit 130 and the purge gas injection holes 121a and 123a of the second injection unit 130a may be simultaneously used. Purge gas is injected.
  • reaction precursor spraying step 804 simultaneously sprays the reaction precursor from the reaction precursor spraying port 127 of the first spraying unit 130 and the reaction precursor spraying hole 127a of the second spraying unit 130a. do.
  • the second purge step 806 simultaneously from the purge gas injection holes 121 and 125 of the first injection unit 130 and the purge gas injection holes 121a and 123a of the second injection unit 130a. Purge gas is injected.
  • An arbitrary point 50a on the substrate on which the atomic layer is deposited while passing through the Y3 section of the first injection unit 130 is defined as a section between the exhaust port 122a of the second injection unit 130a and the reaction precursor injection port 127a. Y4) is further repeatedly exposed to a four-stage cycle by the second injection unit 130a, thereby further depositing an atomic layer. Therefore, the throughput of the atomic layer deposition apparatus 300 can be improved by adding the second injection unit 130a.
  • the shower head 320 when the substrate support 55 of the atomic layer deposition apparatus 300 has the shape of the circular roller 130 as shown in FIG. 9, the shower head 320 is also shown in FIG. 9. Like the shower head 320, the gas injection hole surface 320a may be formed into a curved surface along the circumferential direction of the roller 130.
  • the atomic layer deposition apparatuses 100, 110, and 300 may be installed in a vacuum chamber. After the substrate 50 is mounted in the vacuum chamber and the chamber interior reaches a vacuum state, the exhaust from the chamber is stopped, and the exhaust openings of the shower heads 220 and 320 of the atomic layer deposition apparatuses 110, 110, and 300 ( The exhaust may be configured only by the exhaust pumps connected to 122, 124, 126 and 128.
  • the atomic layer deposition apparatuses 100 and 110 illustrated in FIGS. 4 and 8 may replace the lower shower head 120y instead of the substrate support 55 disposed under the substrate 50, respectively. It may be provided.
  • the added lower shower head 120y is connected to the same shower head moving device as the original shower head 120 and reciprocates in the second and fourth directions, respectively, and the substrate (in the same manner as the original shower head 120). And to deposit an atomic layer on the underside of 50). Therefore, in the present exemplary embodiment, an atomic layer may be simultaneously deposited on the upper and lower surfaces of the substrate 50 while passing through the upper shower head 120 and the lower shower head 120y.
  • the substrate heating apparatus may be disposed in front of the shower head. In this embodiment, the substrate may be preheated before entering the showerhead.
  • the atomic layer deposition apparatus 300 illustrated in FIG. 10 may include a lower shower head 320y in place of the substrate support 55 disposed under the substrate 50.
  • the added lower shower head 320y deposits an atomic layer on the underside of the substrate 50 in the same manner as the original shower head 320. Therefore, in the present exemplary embodiment, an atomic layer may be simultaneously deposited on the upper and lower surfaces of the substrate 50 while passing through the upper shower head 320 and the lower shower head 320y.
  • the substrate heating apparatus may be disposed in front of the shower head.
  • the atomic layer deposition apparatus 400 is a modified embodiment of the atomic layer deposition apparatus 100 described with reference to FIG. 4.
  • the atomic layer deposition apparatus 400 may be used for depositing an atomic layer on a substrate 50 made of a material that transmits gas. For example, it may be used for depositing an atomic layer on a porous separator of a lithium ion battery composed of a plastic material such as polyethylene or polypropylene. It can also be used for depositing atomic layers on fibers that permeate gas.
  • the injection units 120 of the shower head 220 do not include the exhaust ports 122, 124, 126, and 128, and the substrate support 55 is replaced by the exhaust plate 155. Is different from the atomic layer deposition apparatus 100.
  • the injection units 120 of the shower head 220 of the atomic layer deposition apparatus 400 include a raw material precursor injection port 123, a reaction precursor injection port 127, and at least one purge gas injection port 121 and 125 and an exhaust port. Does not include.
  • the raw material precursor, the reaction precursor, and the purge gas injected from the shower head 220 are exhausted through the exhaust plate 155 through the substrate 50.
  • the shower head 220 sprays a raw material precursor, a reaction precursor and a purge gas on the substrate 50 while reciprocating between the first position 70 and the second position 72 along the second direction.
  • the exhaust plate 155 is a plan view of the exhaust plate 155.
  • the exhaust plate 155 is disposed opposite the shower head 220 with the substrate 50 interposed therebetween.
  • the exhaust plate 155 includes at least one exhaust port 156.
  • the exhaust port 156 is connected to an exhaust pump (not shown in FIG. 13).
  • the exhaust port 156 may be manufactured to have various shapes such as a circle, a square, and a slit in a plan view, and may be manufactured to have a boundary surface such as a straight line, a curved line, or an oblique line in the cross-sectional view.
  • FIGS. 14 and 15 a method of depositing an atomic layer on a substrate 50 using the atomic layer deposition apparatus 400 is described.
  • 14 is a cross-sectional view of the atomic layer deposition apparatus 400 when the shower head 220 is located in the first position 70
  • FIG. 15 is when the shower head 220 is located in the second position 72.
  • FIG. It is sectional drawing of the atomic layer vapor deposition apparatus 400 of the. 14 and 15 indicate the flow of fluid ejected from the shower head 220 and exhausted through the substrate 50 to the exhaust port 156.
  • the raw material precursor is injected into the substrate 50 through the raw material precursor injection hole 123 of the shower head 220 in the first position 70, and the substrate (through the purge gas injection holes 121 and 125).
  • Purge gas is injected.
  • the injected raw material precursor and the purge gas pass through the substrate 50 and are exhausted through the exhaust plate 155.
  • the inside of the substrate 50 is coated with the raw material precursor.
  • the moving speed of the shower head 220 is the first moving speed V1, and the moving distance is similar to the arrangement interval X between the adjacent injection units 120. According to one embodiment, the movement distance does not exceed twice the placement distance X.
  • the reaction precursor injection hole 123 of the shower head 220 is blocked, and the reaction precursor is injected through the reaction precursor injection hole 127, and the purge is performed.
  • the purge gas is injected through the gas injection holes 121 and 125.
  • the injected reaction precursor and the purge gas pass through the substrate 50 and are exhausted through the exhaust plate 155.
  • the moving speed of the shower head 220 is the second moving speed V2.
  • the first moving speed V1 and the second moving speed V2 may be equal to or different from each other.
  • an embodiment of a method of depositing an atomic layer using the atomic layer deposition apparatus 500 includes the following steps.
  • the raw material precursor and the reaction precursor are not sprayed at the same time, characterized in that the spraying sequentially with a time difference. Spraying with a time difference can reduce or eliminate the possibility of mixing the precursor precursor and the reactant precursor.
  • a purge step 705 may be added between the first moving step 702 and the second moving step 706.
  • the injection of the raw material precursor and the reaction precursor is blocked while the movement of the shower head 220 is stopped, and the purge gas is injected from the purge gas injection holes 121 and 125.
  • the purge gas may also be injected through the raw material precursor injection holes 123 and the reaction precursor injection holes 127.
  • the moving direction of the shower head 220 in the first moving step 702 and the second moving step 706 may be opposite directions.
  • the movement of the shower head 120 in the first movement step 702 is the movement from the first position 70 to the second position 72 and the movement of the shower head 120 in the second movement step.
  • the movement is the movement from the second position 72 to the first position 70.
  • the moving direction of the shower head 220 in the first moving step 702 and the second moving step 706 may be the same direction.
  • the movement of the shower head 220 in the first and second movement steps 702 and 706 may be a movement from the first position 70 to the second position 72.
  • a third moving step in which the shower head 220 moves from the second position 72 to the first position 70 is further included between the first moving step and the second moving step.
  • the raw material precursor and the reaction precursor are not sprayed from the shower head 220 onto the substrate 50.
  • purge gas may be injected from the shower head 220 onto the substrate 50, and the purged gas is exhausted through the exhaust plate 155.
  • FIG. 16 is a plan view of an atomic layer deposition apparatus 500 according to an embodiment of the present invention.
  • the atomic layer deposition apparatus 500 is a modified embodiment of the atomic layer deposition apparatus 110 described with reference to FIG. 8.
  • the atomic layer deposition apparatus 500 may be used for depositing an atomic layer on a substrate 50 formed of a material that transmits gas.
  • the spray units 120 of the shower head 220 do not include the exhaust ports 122, 124, 126, and 128, and the substrate support 55 is replaced by the exhaust plate 155. Is different from the atomic layer deposition apparatus 110.
  • the injection units 120 of the shower head 220 of the atomic layer deposition apparatus 500 include a raw material precursor injection port 123, a reaction precursor injection port 127, and at least one purge gas injection port 121 and 125 and an exhaust port. Does not include.
  • the raw material precursor, the reaction precursor, and the purge gas injected from the shower head 220 are exhausted through the exhaust plate 155 through the substrate 50.
  • the shower head 220 sprays a raw material precursor, a reaction precursor and a purge gas on the substrate 50 while reciprocating between the first position 170 and the second position 172 along the fourth direction.
  • the fourth direction is parallel to the width 50w of the substrate.
  • FIG. 17 is a cross-sectional view of the atomic layer deposition apparatus 500 when the shower head 220 is located at the first position 170
  • FIG. 18 is when the shower head 220 is located at the second position 172. It is sectional drawing of the atomic layer vapor deposition apparatus 500 of the.
  • the dotted arrows shown in FIGS. 17 and 18 represent the flow of fluid ejected from the shower head 220 and exhausted through the substrate 50 to the exhaust port 156.
  • a precursor of a precursor is injected through the precursor precursor injection hole 123 of the shower head 220, and a purge gas is injected through the purge gas injection holes 121 and 125.
  • the injected raw material precursor and the purge gas pass through the substrate 50 and are exhausted through the exhaust plate 155.
  • other regions of the substrate 50 are also coated with the raw material precursor and purged with purge gas.
  • the raw material precursor and the purge gas injected while the shower head 220 moves are exhausted through the exhaust plate 155.
  • the moving distance of the shower head 220 is similar to the placement distance X between adjacent spray units 120. According to one embodiment, the movement distance does not exceed twice the placement distance (X).
  • an embodiment of a method of depositing an atomic layer using the atomic layer deposition apparatus 500 includes the following steps.
  • a purge step 705 may be added between the first moving step 702 and the second moving step 706.
  • the injection of the raw material precursor and the reaction precursor is blocked while the movement of the shower head 220 is stopped, and the purge gas is injected from the purge gas injection holes 121 and 125.
  • the purge gas may also be injected through the raw material precursor injection holes 123 and the reaction precursor injection holes 127.
  • the moving direction of the shower head 220 in the first moving step 702 and the second moving step 706 may be opposite directions.
  • the movement of the shower head 120 in the first movement step 702 is a movement from the first position 170 to the second position 172 and the movement of the shower head 120 in the second movement step.
  • the movement is movement from the second position 172 to the first position 170.
  • the moving direction of the shower head 220 in the first moving step 702 and the second moving step 706 may be the same direction.
  • the movement of the shower head 220 in the first and second movement steps 702 and 706 may be a movement from the first position 70 to the second position 72.
  • a third moving step in which the shower head 220 moves from the second position 72 to the first position 70 is further included between the first moving step and the second moving step.
  • the raw material precursor and the reaction precursor are not sprayed from the shower head 220 onto the substrate 50.
  • purge gas may be injected from the shower head 220 onto the substrate 50, and the purged gas is exhausted through the exhaust plate 155.
  • the shower head 220 alternately moves the raw material precursor and the reaction precursor while reciprocating between the first position 70 and the second position 72.
  • the substrate 50 may move continuously along the first direction.
  • the substrate 50 is stationary while the shower head 220 alternately sprays the precursor precursor and the reactant precursor while reciprocating between the first position 70 and the second position 72. You can also keep In this embodiment, the substrate 50 is moved after depositing the desired number of atomic layers in a specific area on the substrate 50.
  • the exhaust plate 155 of the atomic layer deposition apparatus 400 and 500 may reciprocate in the same direction in accordance with the reciprocating movement of the shower head 220.
  • the exhaust plate 155 may be fastened together with the reciprocating device of the shower head 220 to reciprocate. Or it may be fastened to a separate reciprocating transfer device.
  • the vent heads may be provided in the shower head 220 of the atomic layer deposition apparatus 400 and 500 of FIGS. 14 and 16.
  • the exhaust ports may be disposed between the raw material precursor injection hole 121, the purge gas injection hole 123, the reaction precursor injection hole 125, and the purge gas injection hole 127.
  • a part of the raw material whole material, the purge gas, and the reaction precursor may be exhausted through the exhaust ports provided in the shower head 220, and the other part may be exhausted through the exhaust ports 156 of the exhaust plate 155.
  • the exhaust plate 155 of the atomic layer deposition apparatus 400 and 500 shown in FIGS. 14 and 16 has a roller as in the atomic layer deposition apparatus 100, 110 and 300 shown in FIG. 55
  • the shower head 200 of the atomic layer deposition apparatus 400 and 500 may also be configured to have a curved surface to surround the exhaust plate 155 in the form of a roller 55.
  • the surface of the exhaust plate 155 of the atomic layer deposition apparatus 400 and 500 shown in FIGS. 14 and 16 may have unevenness to reduce the contact area between the substrate 50 and the exhaust plate 155. Embossing) may be formed.
  • Embodiments of the present invention can be used to deposit atomic layers directly on substrates in the manufacturing process of OLED displays and lighting, CIGS solar cells, dye-sensitized cells, food and pharmaceutical packaging, curved glass substrates, and lithium ion batteries. It may also be used for the purpose of depositing an atomic layer on a barrier film to prevent penetration of moisture and oxygen.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention se rapporte à un appareil de dépôt de couches atomiques qui comprend un appareil de transfert de substrat, une pomme de douche qui comprend au moins une unité d'injection, et un appareil provoquant le mouvement de va-et-vient de la pomme de douche. Pendant le transfert d'un substrat, la pomme de douche effectue des mouvements de va-et-vient et injecte un précurseur source et un précurseur de réactif sur le substrat. Le nombre de couches atomiques déposées sur le substrat peut être ajusté par régulation de la vitesse de transfert du substrat et de la vitesse des mouvements de va-et-vient de la pomme de douche. La présente invention se rapporte à un appareil de dépôt de couches atomiques et à un procédé, l'appareil de dépôt de couches atomiques étant petit et présentant un rendement élevé. La présente invention se rapporte également à un appareil de dépôt de couches atomiques et à un procédé qui permettent le dépôt d'une couche atomique sur un substrat composé d'un matériau transmettant un gaz.
PCT/KR2013/005416 2012-06-20 2013-06-19 Appareil et procédé de dépôt de couches atomiques WO2013191471A1 (fr)

Priority Applications (2)

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JP2015518335A JP2015525302A (ja) 2012-06-20 2013-06-19 原子層蒸着装置及びその方法
US14/570,217 US20150096495A1 (en) 2012-06-20 2014-12-15 Apparatus and method of atomic layer deposition

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KR20120065954 2012-06-20
KR10-2012-0065954 2012-06-20
KR20120085499 2012-08-06
KR10-2012-0085499 2012-08-06
KR1020120134150A KR20130142869A (ko) 2012-06-20 2012-11-26 원자층 증착 장치 및 방법
KR10-2012-0134150 2012-11-26

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KR20180023505A (ko) 2016-08-26 2018-03-07 주식회사 넥서스비 원자층 증착 장비 및 그를 이용한 원자층 증착 방법
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US11124875B2 (en) 2016-08-26 2021-09-21 Industry-University Cooperation Foundation Hanyang University Atomic layer deposition apparatus and atomic layer deposition method using the same

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