WO2020130355A1 - Appareil de traitement de substrat - Google Patents

Appareil de traitement de substrat Download PDF

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Publication number
WO2020130355A1
WO2020130355A1 PCT/KR2019/015323 KR2019015323W WO2020130355A1 WO 2020130355 A1 WO2020130355 A1 WO 2020130355A1 KR 2019015323 W KR2019015323 W KR 2019015323W WO 2020130355 A1 WO2020130355 A1 WO 2020130355A1
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WO
WIPO (PCT)
Prior art keywords
fluid
discharge
chamber
substrate
passages
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PCT/KR2019/015323
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English (en)
Korean (ko)
Inventor
주정명
박상준
오승민
이준희
Original Assignee
주식회사 테스
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Publication of WO2020130355A1 publication Critical patent/WO2020130355A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate processing apparatus, and more specifically, in a substrate processing apparatus that performs a processing process for a substrate using a supercritical fluid, swirls when a supercritical fluid is supplied toward the substrate in a chamber. ) Or a substrate processing apparatus capable of reducing a dead zone by generating a turbulent flow.
  • LSI large scale integration
  • Such an ultrafine pattern may be formed by patterning the resist through various processes of exposing, developing, cleaning the wafer coated with the resist, and then transferring the resist pattern to the wafer by etching the wafer.
  • a process of cleaning the wafer is performed to remove dust and natural oxide films on the wafer surface.
  • the cleaning treatment is performed by immersing a wafer having a pattern on its surface in a treatment liquid such as a chemical liquid or a rinse liquid, or by supplying a treatment liquid to the wafer surface.
  • the pattern collapse as shown in FIG. 16, when the treatment liquid 14 remaining on the surface of the wafer W is finished after the cleaning treatment is performed, the treatment liquid on the left and right sides of the patterns 11, 12, and 13 is unevenly dried. , It corresponds to the phenomenon that the patterns (11, 12, 13) collapse due to the surface tension pulling the patterns (11, 12, 13) from side to side.
  • the root cause of the above-described pattern collapse is due to the surface tension of the processing liquid acting at the liquid/gas interface interposed between the atmospheric atmosphere surrounding the wafer W after the cleaning treatment and the processing liquid remaining between the patterns.
  • a treatment method of drying a treatment liquid using a supercritical fluid (hereinafter referred to as a'supercritical fluid') that does not form an interface between a gas or a liquid.
  • the prior art drying method (shown in dotted line) using only temperature control necessarily passes the gas-liquid coexistence line, so that surface tension occurs at the gas-liquid interface.
  • the gas-liquid coexistence line does not pass, and it is possible to essentially dry the substrate in a surface tension-free state.
  • the flow energy of the supercritical state fluid is uniformly transferred to the wafer W It is important.
  • a so-called'dead zone' in which a fluid energy of a fluid is not transmitted to a certain region of the upper surface of the wafer W is transmitted or relatively less is generated, a pattern 11 of the wafer W in the dead zone region , 12, 13) because the processing liquid 14 or the like present between them may not be properly substituted.
  • a dead zone may occur on the upper surface of the wafer W. That is, in order to use the supercritical fluid, the pressure above the critical pressure must be maintained inside the chamber, and the higher the pressure, the higher the density of the fluid by compression. As the fluid density increases, the volume of the fluid decreases, which is a factor that decreases the flow rate of the fluid. Therefore, in the case of a supercritical high pressure fluid, a dead zone may occur on the upper surface of the wafer W between the through holes of the showerhead due to the slow flow rate.
  • the fluid when the susceptor or the fluid supply unit is rotated, the fluid can be relatively uniformly supplied to the upper surface of the wafer W.
  • the pressure inside the chamber needs to be maintained at a high pressure above the critical pressure
  • installing a configuration for rotating the susceptor or the fluid supply unit requires a component such as a sealing, which makes the device configuration very complicated. I can make it.
  • foreign matter such as powder may be generated due to friction of the rotating region, which may cause particles.
  • a swirl or turbulent flow is generated in the flow of the fluid inside the chamber to prevent the occurrence of dead zones on the upper surface of the substrate, and further, the processing liquid between the patterns is facilitated. It is intended to provide a substrate processing apparatus that can be replaced.
  • the present invention is to provide a substrate processing apparatus capable of generating vortices or turbulence inside the chamber without having a separate rotating component in the chamber.
  • An object of the present invention as described above is a chamber that provides a processing space for performing a processing process for a substrate using a fluid in a supercritical state, a substrate support provided inside the chamber to support the substrate, and a fluid into the chamber It is achieved by a substrate processing apparatus characterized in that it comprises a fluid supply unit for discharging the fluid from the chamber and the fluid supply unit for supplying, and generating a vortex or turbulence inside the chamber.
  • the fluid discharge unit may generate a vortex or turbulence by changing the direction in which the fluid is discharged from inside the chamber.
  • the fluid discharge part may include at least two fluid discharge passages connected to the chamber, and discharge valves respectively provided in the fluid discharge passages to control the opening degree of the fluid discharge passage.
  • the opening degree of the at least two fluid discharge passages may be adjusted in a predetermined period or a random period so as to be different.
  • the opening time of each discharge valve may overlap by a predetermined time.
  • a plurality of discharge holes are formed in the chamber, and the fluid discharge flow path may be connected to the plurality of discharge holes.
  • a first discharge plate having a plurality of discharge holes is formed at a base inside the chamber, and at least two channels provided at a lower portion of the first discharge plate to connect the plurality of discharge holes and the fluid discharge passage are formed. 2 A discharge plate may be provided.
  • the main discharge passage to which the at least two fluid discharge passages are connected, and a main discharge valve to adjust the opening degree of the main discharge passage, the main discharge valve during the processing process for the substrate is a predetermined flow rate It is possible to maintain an open state with an open level corresponding to.
  • the fluid supply unit may generate a vortex or turbulence by changing a direction in which the fluid is supplied in the chamber.
  • the fluid supply unit may include at least two fluid supply passages connected to the upper portion of the chamber, and supply valves respectively provided in the fluid supply passages to control the opening degree of the fluid supply passage.
  • the opening degree of the at least two fluid supply channels may be adjusted in a predetermined period or a random period so as to be different.
  • a shower head provided on the inside of the chamber and having at least two partitioned buffer spaces may be further provided, and the at least two fluid supply flow paths may be respectively connected to the at least two buffer spaces.
  • the main supply flow path is connected to the at least two fluid supply flow path, and further comprising a main supply valve for adjusting the opening degree of the main supply flow path, the main supply valve during the processing process for the substrate is a predetermined flow rate It is possible to maintain an open state with an open level corresponding to.
  • the object of the present invention as described above is a chamber providing a processing space for performing a processing process for a substrate using a fluid in a supercritical state, a substrate support provided inside the chamber to support the substrate, and inside the chamber It is provided with a fluid supply unit for supplying the furnace fluid and a plurality of fluid discharge passages connected to different locations of the chamber, and the opening degree of the plurality of fluid discharge passages is alternately adjusted during the processing process for the substrate. It is achieved by a substrate processing apparatus characterized in that.
  • the main discharge valve may maintain an open state with an opening corresponding to a predetermined flow rate during a processing process for the substrate.
  • the fluid supply unit may further include a plurality of fluid supply passages connected to the upper portion of the chamber, and the opening degree of the plurality of fluid supply passages may be alternately adjusted during the processing process for the substrate.
  • a main supply flow path connected to the plurality of fluid supply flow paths, and the main supply valve may maintain an open state with an opening corresponding to a predetermined flow rate during the processing process for the substrate.
  • FIG. 1 is a side cross-sectional view showing the configuration of a chamber in a substrate processing apparatus according to an embodiment of the present invention
  • Figure 2 is a schematic diagram showing the configuration of a substrate processing apparatus according to an embodiment of the present invention
  • Figure 3 is a plan view of the discharge plate assembly constituting the fluid discharge portion in the substrate processing apparatus according to an embodiment
  • Figure 4 is an exploded perspective view of the discharge plate assembly
  • Figure 6 is a graph showing the opening and closing operation of the discharge valve provided in each fluid discharge passage in the substrate processing apparatus having four fluid discharge passages according to an embodiment
  • FIG. 7 and 8 is a cross-sectional view showing the flow direction of the fluid in the chamber according to the opening and closing operation of the discharge valve according to Figure 6,
  • FIG. 9 and 10 is a graph showing the opening and closing operation of the discharge valve provided in each fluid discharge passage in the substrate processing apparatus having four fluid discharge passages according to another embodiment
  • FIG. 11 is a side cross-sectional view showing a substrate processing apparatus according to another embodiment
  • FIG. 12 is an exploded perspective view of a shower head provided in the substrate processing apparatus according to FIG. 11,
  • FIG. 13 is a substrate processing apparatus having four fluid supply flow paths and four fluid discharge flow paths according to another embodiment, and the opening and closing operations of the supply valves provided in each fluid supply flow path and the discharge valves provided in each fluid discharge flow path are shown.
  • FIG. 14 and 15 are cross-sectional views showing the flow direction of the fluid inside the chamber according to the opening and closing operation of the supply valve and the discharge valve according to FIG. 13,
  • 16 is a view schematically showing a state in which the pattern collapses when the pattern on the substrate is dried according to the prior art
  • 17 is a state diagram showing changes in pressure and temperature of a fluid in a process using a supercritical fluid.
  • FIG. 1 is a side cross-sectional view showing the configuration of the chamber 100 in the substrate processing apparatus 1000 according to an embodiment of the present invention.
  • the substrate processing apparatus 1000 performs a processing process for the substrate W using a supercritical fluid.
  • the supercritical fluid corresponds to a fluid having a phase formed when a material reaches a critical state, that is, a state exceeding a critical temperature and a critical pressure.
  • the fluid in the supercritical state has a molecular density close to that of a liquid and a viscosity similar to that of a gas. Therefore, the supercritical fluid has excellent diffusion, penetration, and dissolving power, which is advantageous for chemical reactions. Since it has little surface tension and does not apply surface tension to the microstructure, it has excellent drying efficiency during the drying process of semiconductor devices. Pattern collapse can be avoided and can be very useful.
  • Carbon dioxide may be used as the supercritical fluid in the present invention.
  • Carbon dioxide has an advantage that the critical temperature is approximately 31.1°C and the critical pressure is relatively low at 7.38 Mpa, making it supercritical, easy to control the temperature and pressure, and low price.
  • carbon dioxide is non-toxic and harmless to the human body, and has non-combustible and inert properties.
  • the supercritical carbon dioxide has a high diffusion coefficient of about 10 to 100 times compared to water or other organic solvents, so the permeability is excellent, so the organic solvent is replaced quickly and has little surface tension to dry. It has properties that are advantageous for use in.
  • the substrate processing apparatus 1000 uses a fluid in a supercritical state to provide a processing space 110 for performing a processing process for the substrate W, the chamber 100 and the chamber 100 ) Is provided inside the substrate support unit 310 for supporting the substrate (W), the fluid supply unit 600 for supplying fluid into the chamber 100 (see FIG. 2) and the fluid inside the chamber 100 Discharge, and may be provided with a fluid discharge unit 500 for generating a vortex or turbulence in the chamber 100.
  • the chamber 100 may provide a processing space 110 that performs a processing process such as a drying process for the substrate W using a supercritical fluid.
  • the processing space 110 inside the chamber 100 may include a substrate support 310 on which the substrate W is mounted and supported.
  • the lower portion of the chamber 100 may be provided with a fluid discharge unit 500 for discharging the fluid inside the chamber (100).
  • a fluid supply unit 600 for supplying fluid into the chamber 100 may be connected to an upper portion of the chamber 100.
  • the fluid in the processing space 110 may exist in a gas, liquid or supercritical state depending on the pressure and temperature conditions inside the chamber 100.
  • the fluid supplied from the fluid supply unit 600 is supplied into the chamber 100 through a fluid supply port 130 connected to the upper portion of the chamber 100.
  • a shower head 200 may be provided at an upper portion inside the chamber 100.
  • a diffusion space 112 may be formed between the showerhead 200 and the ceiling of the chamber 100, and a plurality of through holes 210 may be formed in the showerhead 200. . Therefore, the fluid supplied into the chamber 100 through the fluid supply port 130 is diffused in the diffusion space 112 to pass through the substrate W through the through hole 210 of the shower head 200. Can be fed towards.
  • a fluid discharge unit for discharging fluid from the processing space 110 of the chamber 100 and generating vortex or turbulence in the processing space 110 inside the chamber 100 (below the chamber 100). 500).
  • the fluid discharge part 500 will be described in detail later.
  • FIG. 2 is a schematic diagram showing the configuration of a substrate processing apparatus 1000 according to an embodiment of the present invention. 2 schematically shows a configuration of a fluid supply unit 600 that supplies fluid toward the fluid supply port 130.
  • the substrate processing apparatus 1000 may include a fluid supply unit 600 that supplies fluid toward the fluid supply port 130 by adjusting at least one of fluid temperature and pressure.
  • the fluid supply unit 600 includes a fluid storage unit 605 for storing the fluid, and a main supply channel 635 for connecting the fluid storage unit 605 and the fluid supply port 130. can do.
  • a pressure control unit 610 and a temperature control unit 620 may be disposed along the main supply channel 635.
  • the pressure control unit 610 may be composed of, for example, a pressure pump
  • the temperature control unit 620 may be composed of a heater or a heat exchanger for heating the fluid.
  • the main supply channel 635 may further include a sensing unit 630 that detects at least one of the pressure and temperature of the fluid.
  • the pressure and temperature of the fluid flowing in the main supply channel 635 may be adjusted according to the pressure and temperature sensed by the sensing unit 630.
  • the substrate processing apparatus 1000 may include a control unit (not shown) that controls the pressure control unit 610 and the temperature control unit 620.
  • the control unit may control the pressure control unit 610 and the temperature control unit 620 based on the pressure and temperature sensed by the detection unit 630.
  • the internal environment of the processing space 110 of the chamber 100 that is, the temperature and pressure of the processing space 110 into the chamber 100 It is necessary to create an environment above the critical temperature and pressure that can convert the supplied fluid into a supercritical state and be able to maintain it during the process.
  • the fluid may be pressurized to a critical pressure or higher by the pressure regulating unit 610, and also the temperature regulating unit 620 By doing so, the fluid can be heated to a critical temperature or higher.
  • the processing space 110 of the chamber 100 is maintained in a closed state, so that the pressure of the liquid or supercritical fluid supplied to the processing space 110 can be maintained above a critical pressure.
  • the chamber 100 may further include a heating unit (not shown) to maintain the temperature of the processing space 110 above a predetermined temperature. During the process for the substrate W by the heating unit, the temperature of the processing space 110 or the temperature of the fluid accommodated in the processing space 110 may be maintained above a critical temperature.
  • the fluid in the processing space 110 may change to a liquid phase.
  • the pressure of the fluid in the processing space 110 is pressurized to a critical pressure or higher, heating the fluid to a critical temperature or higher by a heating unit provided in the temperature control unit 620 or the chamber 100
  • the fluid accommodated in the processing space 110 may be converted to a supercritical state.
  • the flow energy of the fluid It is important that is uniformly transferred toward the substrate W.
  • a pattern (not shown) of the substrate W in the dead zone region This is because organic solvents or treatment liquids such as IPA (Isopropyl alcohol), which are present in between, may not be properly substituted.
  • the substitution rate of a treatment solution or an organic solvent such as IPA (Isopropyl alcohol) between the patterns of the substrate W is proportional to the fluidity of the fluid in the supercritical state inside the chamber 100. Therefore, in order to improve the substrate processing efficiency or productivity of the substrate processing apparatus, it is necessary to generate vortices or turbulence inside the chamber 100.
  • IPA isopropyl alcohol
  • a swirl or turbulent flow is generated in the flow of the fluid inside the chamber 100 to prevent the occurrence of dead zones on the upper surface of the substrate W, and further patterns It is to provide a substrate processing apparatus that can easily replace the organic solvent between. Furthermore, the present invention is to provide a substrate processing apparatus capable of generating vortex or turbulence inside the chamber 100 without having a separate rotating component in the chamber 100.
  • the substrate processing apparatus 1000 may include a fluid discharge unit 500 that discharges fluid from inside the chamber 100 and generates vortex or turbulence inside the chamber 100. .
  • the flow of fluid inside the processing space 110 can cause vortex or turbulence.
  • the fluid discharge unit 500 may generate a vortex or turbulence by changing the direction or position in which the fluid is discharged from inside the chamber 100. That is, when the direction or position in which the fluid is discharged from the processing space 110 inside the chamber 100 is changed to a predetermined cycle or a random cycle, the fluid discharged downward from the processing space 110.
  • the flow of can change, which can cause vortices or turbulence.
  • the fluid discharge unit 500 is at least two fluid discharge passages connected to the lower portion of the chamber 100 (540A, 540B, 540C, 540D) (see Fig. 5), and the fluid discharge passages (540A, 540B, Each of 540C, 540D) may be provided with a discharge valve (550A, 550B, 550C, 550D) (see FIG. 5) to control the opening degree of the fluid discharge passages (540A, 540B, 540C, 540D).
  • a discharge valve 550A, 550B, 550C, 550D
  • the fluid discharge passages 540A, 540B, 540C, and 540D when the fluid discharge passages 540A, 540B, 540C, and 540D are connected to the lower portion of the chamber 100, they may be connected along the substantially edge of the substrate support 310. That is, when the substrate W is seated on the substrate support 310, the fluid discharge passages 540A, 540B, 540C, and 540D are substantially the substrate W when connected to the lower portion of the chamber 100. ) Can be connected along the edge.
  • each of the fluid discharge passages 540A, 540B, 540C, and 540D may be connected to the lower portion of the chamber 100, and each of the fluid discharge passages 540A, 540B, 540C, and 540D may support the substrate. It may be connected while forming an angle of approximately 90 degrees around the center of the (310).
  • the number and central angles of the fluid discharge passages 540A, 540B, 540C, and 540D are merely examples, and may be appropriately modified.
  • each of the fluid discharge passages may be provided with discharge valves (550A, 550B, 550C, 550D) that can adjust the opening degree, respectively.
  • the opening degree of each of the fluid discharge passages 540A, 540B, 540C, and 540D can be adjusted by the discharge valves 550A, 550B, 550C, and 550D.
  • each of the fluid discharge passages 540A, 540B, 540C, 540D may be opened or closed by the discharge valves 550A, 550B, 550C, 550D.
  • each of the fluid discharge passages 540A, 540B, 540C, and 540D may be completely opened or closed by the discharge valves 550A, 550B, 550C, and 550D.
  • the opening degree of the at least two fluid discharge passages 540A, 540B, 540C, 540D may be adjusted to be different, and the opening degree of the at least two fluid discharge passages 540A, 540B, 540C, 540D may be It can be changed to a predetermined period or a random period.
  • the first fluid discharge passage 540A is opened, and the remaining three fluid discharge passages 540A, 540B, 540C, 540D When is closed, the fluid supplied through the shower head 200 may flow from the processing space 110 toward the first fluid discharge passage 540A.
  • the fluid flowing toward the first fluid discharge passage 540A changes the flow direction. It is changed to flow toward the third fluid discharge passage 540C.
  • the direction in which the fluid flows changes as the fluid is discharged from the inside of the chamber 100, so that a vortex or turbulence can be generated in the flow of the fluid in the processing space 110.
  • the generation of dead zones is suppressed on the upper surface of the substrate W, and the organic solvent between the patterns (not shown) of the substrate W can be effectively substituted.
  • a discharge plate assembly 510 connected to the fluid discharge passages 540A, 540B, 540C, and 540D may be provided at a base inside the chamber 100.
  • FIG 3 is a plan view of the discharge plate assembly 510 constituting the fluid discharge unit 500 in the substrate processing apparatus 1000
  • Figure 4 is an exploded perspective view of the discharge plate assembly 510
  • Figure 5 is the discharge plate assembly It is the lower perspective view of 510.
  • the discharge plate assembly 510 is provided at a lower portion of the first discharge plate 520 and the first discharge plate 520 in which a plurality of discharge holes 522 are formed.
  • a second discharge plate 530 having two discharge holes 522 and at least two channels 532A, 532B, 532C, and 532D connecting the fluid discharge passages 540A, 540B, 540C, and 540D to each other may be provided. have.
  • the first discharge plate 520 may be composed of a circular plate corresponding to the base inside the chamber 100, the first central hole through which the support bar 320 of the substrate support 310 passes through the central portion 524 may be formed.
  • the shape of the first discharge plate 520 is not limited thereto, and may be modified to an appropriate shape.
  • a plurality of discharge holes 522 may be formed in the first discharge plate 520 along an edge or a predetermined distance from the center.
  • the discharge hole 522 may be disposed along the substantially edge of the substrate support 310 at the base inside the chamber 100.
  • the discharge hole 522 may be substantially disposed on the base along the edge of the substrate W.
  • the distance between the discharge holes 522 may be as far as possible from the substrate W.
  • the discharge direction is changed at a large angle, so that a vortex or turbulence having a large flow energy can be formed more smoothly.
  • the discharge plate assembly 510 may include a second discharge plate 530 under the first discharge plate 520.
  • at least two channels 532A, 532B, 532C, and 532D communicating the plurality of discharge holes 522 may be formed in the second discharge plate 530.
  • the second discharge plate 530 may be formed of a circular plate corresponding to the base inside the chamber 100, and in the center portion, a second center hole through which the support bar 320 of the substrate support portion 310 penetrates. 534 may be formed.
  • the shape of the second discharge plate 530 is not limited thereto, and may be modified to an appropriate shape.
  • At least two channels 532A, 532B, 532C, and 532D may be formed on the second discharge plate 530 along an edge or a predetermined distance from the center.
  • the channels 532A, 532B, 532C, and 532D may be formed of grooves formed at a predetermined depth on the upper surface of the second discharge plate 530.
  • the channels 532A, 532B, 532C, and 532D may be configured to communicate with the discharge holes 522 formed in the first discharge plate 520.
  • the plurality of discharge holes 522 are connected to the number of channels 532A, 532B, 532C, 532D. It can be divided to correspond.
  • the divided discharge holes 522 may communicate with the channels 532A, 532B, 532C, and 532D, respectively.
  • each of the channels 532A, 532B, 532C, 532D may be connected to the fluid discharge passages 540A, 540B, 540C, 540D connected through the lower portion of the chamber 100, respectively.
  • the discharge hole 522 of the first discharge plate 520, the channels 532A, 532B, 532C, 532D of the second discharge plate 530 and the fluid discharge passages 540A, 540B, 540C, 540D A flow path through which fluid is discharged from the processing space 110 is formed.
  • the channels 532A, 532B, 532C, 532D are four channels, that is, the first channel 532A, the second channel 532B, the third channel 532C, and the fourth
  • the discharge holes 522 of the first discharge plate 520 may be divided into four groups and connected to the four channels 532A, 532B, 532C, and 532D, respectively.
  • the fluid discharge passages 540A, 540B, 540C, 540D may be connected to the four channels 532A, 532B, 532C, 532D.
  • four of the fluid discharge passages 540A, 540B, 540C, and 540D are provided to correspond to the number of channels 532A, 532B, 532C, and 532D, so that the fluid discharge passages 540A, 540B, 540C, 540D Can be connected to the channels 532A, 532B, 532C, 532D, respectively.
  • the number of the fluid discharge passages is provided less than the number of channels, and a configuration in which two or more channels are connected to one fluid discharge passage is also possible.
  • the fluid discharge passages (540A, 540B, 540C, 540D) is provided with discharge valves (550A, 550B, 550C, 550D), respectively, to control the opening degree of the fluid discharge passages (540A, 540B, 540C, 540D) have.
  • the fluid discharge part 500 includes a main discharge passage 560 to which the at least two fluid discharge passages 540A, 540B, 540C, and 540D are connected, and the main discharge passage 560. It may further include a main discharge valve 562 for adjusting the opening degree of.
  • the at least two fluid discharge passages 540A, 540B, 540C, and 540D are one main discharge passage 560.
  • the main discharge passage 560 is connected to the main discharge valve 562 for adjusting the opening degree of the main discharge passage 560.
  • the main discharge passage 560 may be opened or closed by the main discharge valve 562. Furthermore, the main discharge flow path 560 may not be completely opened or closed by the main discharge valve 562, but only a certain degree may be opened or closed.
  • the main discharge valve 562 may serve to control the flow rate of the fluid discharged through the main discharge flow path 560. Furthermore, the aforementioned discharge valves 550A, 550B, 550C, and 550D may serve to control the direction of the fluid discharged from inside the chamber 100.
  • the main discharge valve 562 For example, if the main discharge valve 562 is omitted, the discharge direction of the fluid inside the chamber 100 by driving the discharge valves 550A, 550B, 550C, 550D, as well as the chamber 100 ) The flow rate discharged from inside is also determined. In this case, due to the pressure change according to the opening/closing driving of the discharge valves 550A, 550B, 550C, 550D, an impact due to the pressure change may be applied into the chamber 100, which is processed inside the chamber 100 It may affect the process.
  • the main discharge valve 562 when performing the processing process for the substrate W, the main discharge valve 562 is opened in an opening degree corresponding to a predetermined flow rate. By maintaining, it is possible to continuously discharge the fluid at a predetermined flow rate.
  • the at least two discharge valves 550A, 550B, 550C, and 550D are controlled to be opened by varying the opening degree at a predetermined cycle or a random cycle so that the fluid discharged from the processing space 110 of the chamber 100 It can be adjusted to change the flow direction.
  • the fluid is continuously supplied to the substrate W through the fluid supply unit 600 during the process of processing the substrate W using the supercritical fluid inside the chamber 100.
  • the discharge plate assembly 510 is provided on the base inside the chamber 100, the present invention is not limited to this and at least one of the discharge plates constituting the discharge plate assembly 510. May be integrally formed in the chamber 100.
  • a plurality of discharge holes are directly formed in the base inside the chamber 100, and the fluid discharge passages 540A, 540B, 540C, and 540D are directly connected to a plurality of discharge holes under the chamber 100.
  • the fluid discharge passages 540A, 540B, 540C, and 540D are directly connected to a plurality of discharge holes under the chamber 100.
  • At least two channels for communicating the plurality of discharge holes are further formed below the discharge holes in the base, and the at least two fluid discharge passages 540A, 540B, 540C, and 540D are connected to the at least two channels. Each connected configuration is also possible.
  • FIG. 6 is a substrate processing apparatus 1000 having four fluid discharge flow paths 540A, 540B, 540C, and 540D according to an embodiment, using a supercritical fluid inside the chamber 100 in a substrate ( It is a graph showing the opening and closing operation of the discharge valves 550A, 550B, 550C, 550D provided in each fluid discharge passage 540A, 540B, 540C, 540D when performing the process for W).
  • FIG. 6 shows a first discharge valve 550A
  • 'B' shows a second discharge valve 550B
  • 'C' shows a third discharge valve 550C
  • 'D' Shows a fourth discharge valve 550D.
  • the first discharge valve 550A is opened for a first time T1, the remaining second discharge valve 550B, the third discharge valve 550C, and the fourth discharge valve 550D Can remain closed.
  • the fluid supplied to the chamber 100 through the shower head 200 discharges the first fluid equipped with the first discharge valve 550A from the processing space 110. It flows toward the discharge hole 522 of the first discharge plate 520 connected to the flow path 540A.
  • the fluid in the processing space 110 includes a discharge hole 522 of the first discharge plate 520, a first channel 532A of the second discharge plate 530, a first fluid discharge passage 540A, and It is discharged to the outside through the main discharge passage (560).
  • the third discharge valve 550C is opened for a second time T2, and the remaining first discharge valve 550A, second discharge valve 550B, and fourth discharge valve 550D are kept closed. Can.
  • a third discharge valve 550C of the third fluid discharge passage 540C facing the first fluid discharge passage 540A and the substrate W may be opened.
  • the fluid supplied to the chamber 100 through the shower head 200 is discharged from the processing space 110 in a third fluid discharged with the third discharge valve 550C.
  • the direction is changed toward the discharge hole 522 of the first discharge plate 520 connected to the flow path 540C to flow to form a vortex or turbulence.
  • the fluid in the processing space 110 includes a discharge hole 522 of the first discharge plate 520, a third channel 532C of the second discharge plate 530, a third fluid discharge passage 540C, and It is discharged to the outside through the main discharge passage (560).
  • the second discharge valve 550B is opened for a third time T3, and the remaining first discharge valve 550A, the third discharge valve 550C, and the fourth discharge valve 550D remain closed.
  • the fourth discharge valve 550D is opened for a fourth time T4, and the remaining first discharge valve 550A, second discharge valve 550B, and third discharge valve 550C remain closed.
  • the above-described first discharge valve 550A, the second discharge valve 550B, the third discharge valve 550C and the fourth discharge valve 550D are opened and closed once, respectively, and then the above-described process can be repeated according to the process. have.
  • the opening time of each discharge valve (550A, 550B, 550C, 550D) for a predetermined time It can be adjusted to overlap.
  • the opening time may overlap with a discharge time that is subsequently opened and a predetermined overlapping time.
  • the third discharge valve 550C and the open time may overlap the first overlapping time TO1. If there is no overlapping time and the first discharge valve 550A is completely closed and then the third discharge valve 550C is opened, an impact due to a pressure change may be transmitted to the processing space 110. Since the second overlapping time TO2, the third overlapping time TO3, and the fourth overlapping time TO4 shown in FIG. 6 can be similarly described, repeated description will be omitted.
  • Figure 9 is a graph showing the opening and closing operation of the discharge valve (550A, 550B, 550C, 550D) according to another embodiment.
  • the opening and closing operations may be sequentially performed for the second time T2, the third time T3, and the fourth time T4.
  • the discharge valves 550A, 550B, 550C, and 550D are sequentially opened or closed in the clockwise or counterclockwise order according to the order in which they are disposed, the flow direction of the fluid in the processing space 110 changes constantly. Vortex or turbulence may be formed.
  • Figure 10 is a graph showing the opening and closing operation of the discharge valve (550A, 550B, 550C, 550D) according to another embodiment.
  • the first discharge valve 550A, the second discharge valve 550B, the third discharge valve 550C, and the fourth discharge valve 550D are completely opened or closed. Rather, it can be adjusted to vary the degree of openness according to a predetermined period or a random period.
  • the remaining second discharge valve 550B, the third discharge valve 550C, and the fourth discharge valve ( 550D) is not completely closed, but may remain open (C1, C2, C3, C4), for example, by 10% to 30%.
  • the discharge valves 550A, 550B, 550C, and 550D are driven as described above, instead of being completely opened or closed, if the degree of opening is changed according to a predetermined cycle or a random cycle, the discharge valves 550A, 550B , 550C, 550D) can relatively reduce the pressure change rippled from the discharge valves 550A, 550B, 550C, 550D compared to the case where they are completely opened or closed.
  • the impact caused by the pressure change on the processing space 110 can be minimized by driving the discharge valves 550A, 550B, 550C, and 550D.
  • the discharge valves 550A, 550B, 550C, and 550D it is possible to prevent the fluid inside the chamber 100 from being concentrated in one side during the processing process for the substrate W and to the entire area of the upper surface of the substrate W. The flow energy of the fluid can be transmitted.
  • FIG. 11 is a side cross-sectional view showing a substrate processing apparatus 2000 according to another embodiment
  • FIG. 12 is an exploded perspective view of the shower head 2200 provided in the substrate processing apparatus 2000.
  • the fluid supply unit 2600 may generate a vortex or turbulence by changing a direction in which the fluid is supplied into the chamber 100. That is, the direction of the fluid supplied to the processing space 110 may be changed to generate vortices or turbulence in the processing space 110.
  • the fluid supply part 2600 is connected to at least two fluid supply passages 2140A, 2140B, 2140C, 2140D connected to the upper part of the chamber 100, and the fluid supply passages 2140A, 2140B, 2140C, 2140D.
  • Each may be provided with a supply valve (2142A, 2142B, 2142C, 2142D) to control the opening degree of the fluid supply flow path (2140A, 2140B, 2140C, 2140D).
  • each of the fluid supply passages 2140A, 2140B, 2140C, 2140D may be opened or closed by the supply valves 2142A, 2142B, 2142C, 2142D.
  • each of the fluid discharge passages 540A, 540B, 540C, and 540D may be completely opened or closed by the supply valves 2142A, 2142B, 2142C, and 2142D, without opening or closing them completely.
  • the opening degree of the at least two fluid supply passages 2140A, 2140B, 2140C, 2140D may be adjusted to be different, and the opening degree of the at least two fluid supply passages 2140A, 2140B, 2140C, 2140D may be It can be changed to a predetermined period or a random period.
  • the first fluid supply channel 2140A is opened, and the remaining three fluid supply channels 2140B, 2140C, 2140D are closed.
  • the fluid can be supplied only through the region where the first fluid supply flow path 2140A is connected in the shower head 2200.
  • the first fluid supply channel 2140A is closed and the third fluid supply channel 2140C is opened at a predetermined or random cycle, fluid is supplied from the shower head 2200 toward the substrate W.
  • the area to be changed becomes so that vortices or turbulence can be generated in the processing space 110 of the chamber 100.
  • At least two partitioned buffer spaces 2230A, 2230B, 2230C, and 2230D may be formed in the showerhead 2200, and the at least two fluid supply flow paths 2140A, 2140B, 2140C, and 2140D may include the at least It may be connected to two buffer spaces 2230A, 2230B, 2230C, and 2230D, respectively.
  • the shower head 2200 is disposed on the upper plate 2210 and the lower portion of the upper plate 2210, a plurality of through holes 2222 are formed, and at least two are disposed between the upper plate 2210.
  • a lower plate 2220 providing two buffer spaces 2230A, 2230B, 2230C, and 2230D may be provided.
  • At least two partition walls 2300A, 2300B, 2300C, and 2300D may be provided between the upper plate 2210 and the lower plate 2220.
  • the showerhead 2200 when providing four buffer spaces 2230A, 2230B, 2230C, 2230D to the showerhead 2200, four partition walls 2300A between the upper plate 2210 and the lower plate 2220 , 2300B, 2300C, 2300D).
  • four of the fluid supply passages 2140A, 2140B, 2140C, and 2140D may be provided corresponding to the number of the buffer spaces 2230A, 2230B, 2230C, and 2230D, and the fluid supply passages 2140A, 2140B, 2140C , 2140D) may be connected to the buffer spaces 2230A, 2230B, 2230C, and 2230D, respectively.
  • the number of the fluid supply passages is provided less than the number of the buffer spaces, and a configuration in which two or more buffer spaces are connected to one fluid supply passage is also possible.
  • the fluid supply part 2600 includes a main supply passage 2100 connected to the at least two fluid supply passages 2140A, 2140B, 2140C, and 2140D, and a main controlling the opening degree of the main supply passage 2100
  • a supply valve 2120 may be further provided.
  • the main supply flow path 2100 is the at least two fluid supply flow paths 2140A, 2140B, 2140C, 2140D).
  • the main supply passage 2100 is provided with a main supply valve 2120 for adjusting the opening degree of the main supply passage 2100.
  • the main supply passage 2100 may be opened or closed by the main supply valve 2120. Furthermore, the main supply passage 2100 may be opened or closed only to a certain degree without being completely opened or closed by the main supply valve 2120.
  • the main supply valve 2120 may serve to control the flow rate of the fluid supplied through the main supply passage 2100. Furthermore, the aforementioned supply valves 2142A, 2142B, 2142C, and 2142D may serve to control the direction of the fluid supplied from the shower head 2200.
  • the chamber (100) The flow rate supplied to the interior is also determined.
  • an impact due to the pressure change may be applied into the chamber 100, which is processed inside the chamber 100 It may affect the process.
  • the main supply valve 2120 is opened in an opening degree corresponding to a predetermined flow rate.
  • the at least two supply valves (2142A, 2142B, 2142C, 2142D) are adjusted to be opened by varying the opening degree at a predetermined period or a random period of fluid supplied from the shower head 2200 of the chamber 100 It can be adjusted to change direction.
  • FIG. 13 shows the inside of the chamber 100 in the substrate processing apparatus 2000 having four fluid supply passages 2140A, 2140B, 2140C, 2140D and four fluid discharge passages 540A, 540B, 540C, 540D.
  • supply valves (2142A, 2142B, 2142C, 2142D) provided in each fluid supply passage (2140A, 2140B, 2140C, 2140D) and each It is a graph showing the opening and closing operation of the discharge valves 550A, 550B, 550C, 550D provided in the fluid discharge passages 540A, 540B, 540C, 540D.
  • the third supply valve 2142C is opened for a first time T1, and the remaining first supply valve 2142A, the second supply valve 2142B, and the fourth supply valve 2142D Can remain closed.
  • the first discharge valve 550A is opened for the first time T1, and the remaining second discharge valve 550B, third discharge valve 550C and fourth discharge valve 550D are closed. Can be maintained.
  • the fluid may be supplied to the third buffer space 2230C of the showerhead 2200 through the third fluid supply passage 2140C. Subsequently, the fluid may be supplied to the substrate W through the lower through hole 2222 in the third buffer space 2230C.
  • the first discharge valve 550A of the first fluid discharge passage 540A arranged diagonally around the third fluid supply passage 2140C and the processing space 110 corresponds to an open state.
  • the fluid supplied from the third buffer space 2230C toward the substrate W through the lower through hole 2222 is discharged from the first discharge plate 520 through the upper surface of the substrate W. It is discharged to the outside through the hole 522, the first channel 532A of the second discharge plate 530, the first fluid discharge passage 540A and the main discharge passage 560.
  • the first supply valve 2142A is opened for a second time T2, and the remaining second supply valve 2142B, the third supply valve 2142C, and the fourth supply valve 2142D remain closed.
  • the third discharge valve 550C is opened for the second time T2, and the remaining first discharge valve 550A, second discharge valve 550B, and fourth discharge valve 550D are closed. Can be maintained.
  • the fluid may be supplied to the first buffer space 2230A of the showerhead 2200 through the first fluid supply passage 2140A. Subsequently, the fluid may be supplied to the substrate W through the lower through hole 2222 in the first buffer space 2230A.
  • the first fluid supply flow path 2140A and the third discharge valve 550C of the third fluid discharge flow path 540C disposed diagonally around the processing space 110 correspond to an open state.
  • the fluid supplied from the first buffer space 2230A toward the substrate W through the lower through hole 2222 is discharged through the upper surface of the substrate W through the upper surface of the substrate W. It is discharged to the outside through the hole 522, the third channel 532C of the second discharge plate 530, the third fluid discharge passage 540C and the main discharge passage 560.
  • the fluid supply unit 2600 and the fluid discharge unit 500 are both configured to generate vortices or turbulence, but are not limited thereto.
  • a configuration having only the fluid supply unit 2600 for generating vortices or turbulence at the top of the chamber 100 is also possible.
  • at least one of the fluid supply part and the fluid discharge part provided in the chamber 100 may be configured to generate vortices or turbulence in the processing space 110.
  • the flow energy of the vortex or turbulence may decrease before reaching the substrate due to the high pressure inside the chamber. It may be advantageous to generate vortices or turbulence. That is, it may be advantageous to generate vortices or turbulence on the side of the fluid supply portion and the fluid discharge portion where the distance from the substrate is relatively closer.
  • the present invention by generating a vortex or turbulence in the flow of the fluid inside the chamber to prevent the generation of a dead zone on the upper surface of the substrate, furthermore, it is possible to easily replace the treatment liquid between the patterns.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention concerne un appareil de traitement de substrat, et plus particulièrement, à un appareil de traitement de substrat qui effectue un procédé de traitement sur un substrat à l'aide d'un fluide supercritique et qui génère des tourbillons ou un écoulement turbulent dans une chambre pour réduire les zones mortes lorsque le fluide supercritique est alimenté vers le substrat.
PCT/KR2019/015323 2018-12-20 2019-11-12 Appareil de traitement de substrat WO2020130355A1 (fr)

Applications Claiming Priority (2)

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KR10-2018-0166646 2018-12-20
KR1020180166646A KR102154476B1 (ko) 2018-12-20 2018-12-20 기판처리장치

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WO2020130355A1 true WO2020130355A1 (fr) 2020-06-25

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KR102613660B1 (ko) * 2021-08-02 2023-12-14 주식회사 테스 기판처리장치

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPS6048400B2 (ja) * 1976-12-20 1985-10-26 カメワ アクチエボラ−ク プロペラ翼
KR20140014043A (ko) * 2013-12-23 2014-02-05 세메스 주식회사 기판 처리 장치, 기판처리설비
KR101430744B1 (ko) * 2010-06-21 2014-08-18 세메스 주식회사 박막 증착 장치
KR101540718B1 (ko) * 2014-03-11 2015-07-31 국제엘렉트릭코리아 주식회사 기판 처리 장치
US20170335456A1 (en) * 2016-05-20 2017-11-23 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing

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Publication number Priority date Publication date Assignee Title
KR20090132134A (ko) * 2008-06-20 2009-12-30 주식회사 케이피씨 폐가스 처리장치
KR101272779B1 (ko) * 2011-06-30 2013-06-11 세메스 주식회사 기판 처리 장치 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6048400B2 (ja) * 1976-12-20 1985-10-26 カメワ アクチエボラ−ク プロペラ翼
KR101430744B1 (ko) * 2010-06-21 2014-08-18 세메스 주식회사 박막 증착 장치
KR20140014043A (ko) * 2013-12-23 2014-02-05 세메스 주식회사 기판 처리 장치, 기판처리설비
KR101540718B1 (ko) * 2014-03-11 2015-07-31 국제엘렉트릭코리아 주식회사 기판 처리 장치
US20170335456A1 (en) * 2016-05-20 2017-11-23 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing

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