WO2013191421A1 - Appareil de traitement de substrat - Google Patents

Appareil de traitement de substrat Download PDF

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Publication number
WO2013191421A1
WO2013191421A1 PCT/KR2013/005319 KR2013005319W WO2013191421A1 WO 2013191421 A1 WO2013191421 A1 WO 2013191421A1 KR 2013005319 W KR2013005319 W KR 2013005319W WO 2013191421 A1 WO2013191421 A1 WO 2013191421A1
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WO
WIPO (PCT)
Prior art keywords
substrate
unit
swing
radiant heat
processing apparatus
Prior art date
Application number
PCT/KR2013/005319
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English (en)
Korean (ko)
Inventor
정광일
장범수
조윤선
박지호
Original Assignee
주식회사 제우스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 주식회사 제우스 filed Critical 주식회사 제우스
Publication of WO2013191421A1 publication Critical patent/WO2013191421A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, by heating a substrate and a first fluid injected onto the substrate surface by radiant heat, thereby reducing the surface tension of the first fluid and forming a fine pattern formed on the surface of the substrate.
  • the present invention relates to a substrate processing apparatus capable of stably washing or drying the substrate.
  • the photoresist coating process, the developing process, the etching process, the chemical vapor deposition in the process of processing a substrate such as a glass substrate or a wafer in a flat panel display device manufacturing or semiconductor manufacturing process Various processes such as chemical vapor deposition process and ashing process are performed.
  • a wet cleaning process using chemical or deionized water and a chemical or pure water remaining on the surface of the substrate may be used.
  • a drying process is carried out for drying.
  • an apparatus for drying the substrate using only centrifugal force and an apparatus for drying the substrate using an organic solvent having the same isopropyl alcohol (IPA) is used.
  • An object of the present invention is to heat the substrate and the first fluid sprayed on the surface of the substrate by radiant heat, thereby reducing the surface tension of the first fluid, and stably cleans or dries between the fine patterns formed on the surface of the substrate. It is to provide a substrate processing apparatus.
  • a substrate processing apparatus for achieving the above object is a spin unit for rotating the substrate while supporting the substrate; A first supply unit supplying a first fluid to the substrate; A heating unit for heating the first fluid supplied from the substrate and the first supply unit by radiant heat; And a swing unit swinging the first supply unit and the heating unit. Characterized in that it comprises a.
  • the swing unit the swing unit is provided with the first supply unit; A first swing driving part swinging the swing part; And a second swing driving part spaced apart from the first swing driving part to swing the heating unit.
  • the swing unit the swing unit is provided with the first supply unit; A first swing driving part swinging the swing part; And a fixing part fixing the heating unit to the swing part. Characterized in that it comprises a.
  • the swing unit the second swing drive unit for swinging the heating unit; A swing part provided with the first supply unit; And a fixing part fixing the swing part to the heating unit. Characterized in that it comprises a.
  • the fixing portion the first fixing bracket portion for forming a first seating portion to which the swing portion is fixed; And a second fixing bracket part provided on the first fixing bracket part and forming a second seating part to which the heating unit is fixed.
  • the first supply unit the first nozzle portion provided in the swing portion to discharge the first fluid toward the substrate; A first supply part supplying the first fluid to the first nozzle part; And a first flow path part connecting the first nozzle part and the first supply part to form a supply path of the first fluid. Characterized in that it comprises a.
  • the heating unit the heat generating unit for generating the radiant heat
  • An emission part from which the radiant heat is radiated and an induction part surrounding the diverging part so that the radiant heat is directed toward the substrate.
  • the first fluid is characterized in that the isopropyl alcohol (IPA) is supplied in a liquid state from the first supply unit.
  • IPA isopropyl alcohol
  • the substrate processing apparatus includes a second supply unit for supplying a second fluid to the substrate while swinging by the swing unit; It characterized in that it further comprises.
  • the substrate processing apparatus further comprises a control unit for controlling the temperature of the radiant heat.
  • control unit the measuring unit for measuring the temperature of the radiant heat; And a controller for controlling the temperature of the radiant heat generated by the heating unit according to the temperature of the radiant heat measured by the measuring unit. Characterized in that it comprises a.
  • the radiant heat emitted from the diverging portion is characterized in that it is radiated in a fan shape toward the edge of the substrate from the center of the substrate.
  • the radiant heat emitted from the diverging portion is characterized in that the intensity increases from the center of the substrate toward the edge of the substrate.
  • the substrate processing apparatus reduces the surface tension of the first fluid by heating the first fluid injected onto the substrate and the substrate surface by radiant heat, and stably cleans the fine patterns formed on the surface of the substrate, Can be dry.
  • FIG. 1 is a side cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a perspective view showing a heating unit according to an embodiment of the present invention.
  • FIG. 3 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 4 is a plan view illustrating an operating state of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 5 is a side cross-sectional view schematically showing a substrate processing apparatus according to another embodiment of the present invention.
  • FIG. 6 is a perspective view illustrating a fixing part according to another embodiment of the present invention.
  • FIG. 7 is a plan view schematically showing a substrate processing apparatus according to another embodiment of the present invention.
  • FIG. 8 is a plan view illustrating an operating state of a substrate processing apparatus according to another embodiment of the present invention.
  • FIG. 9 is a graph illustrating a surface heating state of a substrate in a general substrate processing apparatus.
  • FIG. 10 is a plan view illustrating a surface heating state of a substrate according to a first modified example in the substrate processing apparatus according to an embodiment of the present invention or the substrate processing apparatus according to another embodiment of the present invention.
  • FIG 11 is a plan view illustrating a heating state of a substrate according to a second modified example in the substrate processing apparatus according to the embodiment of the present invention or the substrate processing apparatus according to another embodiment of the present invention.
  • FIG. 12 is a graph illustrating a heating state of a substrate according to a first modified example or a second modified example in a substrate processing apparatus according to an embodiment of the present invention or a substrate processing apparatus according to another embodiment of the present invention.
  • the swing movement means that the object is rotated forward or reverse within a limited rotation angle when the object is rotated about an arbitrary rotation axis.
  • FIG. 1 is a side cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention
  • Figure 2 is a perspective view showing a heating unit according to an embodiment of the present invention.
  • the substrate W according to an embodiment of the present invention may apply various known substrates such as glass substrates or wafers.
  • the upper surface of the substrate W forms a patterned surface on which a fine pattern is formed, and the lower surface of the substrate W forms an unpatterned surface without a pattern.
  • the treatment liquid is supplied to the rotated substrate W to clean or dry the substrate W.
  • the treatment liquid may be composed of a first fluid.
  • the first fluid may be an organic solvent such as isopropyl alcohol (IPA) supplied to the substrate W in a liquid state.
  • IPA isopropyl alcohol
  • the treatment liquid may be composed of a second fluid.
  • the second fluid may be a dry gas such as nitrogen (N 2) gas supplied to the substrate W in a gas state.
  • the substrate W when the substrate W is supported by the spin head 130 so that the pattern surface faces upward, the substrate W is supplied by supplying the processing liquid to the substrate W that is rotated. ) Can be cleaned or dried.
  • a substrate processing apparatus includes a spin unit 100, a first supply unit 200, a heating unit 300, and a swing unit 400.
  • the spin unit 100 rotates the substrate W while supporting the substrate W. As shown in FIG. 1
  • the spin unit 100 includes a rotation unit 110, a transmission unit 120, a spin head unit 130, and a body unit 140.
  • the rotating unit 110 generates a rotational force for rotating the substrate (W).
  • the rotating unit 110 may be provided as a mechanism having a driving unit such as a motor generating a rotational force and a power transmission unit such as a belt chain transmitting the rotating force generated from the driving unit to the transmission unit 120.
  • a driving unit such as a motor generating a rotational force
  • a power transmission unit such as a belt chain transmitting the rotating force generated from the driving unit to the transmission unit 120.
  • the transmission unit 120 transmits the rotational force generated by the rotation unit 110 to the spin head unit 130.
  • the spin head 130 is coupled to the transfer unit 120 and rotated by the rotational force transmitted through the transfer unit 120.
  • the spin head 130 is seated and supported while being spaced apart from the substrate (W).
  • the spin head 130 includes a support pin 131 and a chucking pin 133.
  • the support pin part 131 supports the non-patterned surface of the substrate W so that the substrate W is spaced apart from the spin head part 130.
  • the support pin part 131 protrudes upward from the spin head part 130.
  • the chucking pin part 133 supports the side surface of the substrate W to prevent the substrate W from deviating in the lateral direction of the spin head 130 by centrifugal force when the spin head 130 is rotated. .
  • At least three chucking pins 133 are spaced apart from each other and positioned in the edge region of the spin head 130, and protrude upward from the spin head 130.
  • the diameter of the virtual circle formed by the at least three chucking pin portions 133 is the diameter of the virtual circumscribed circle in contact with the substrate W. It is provided larger than the diameter.
  • the chucking pin portion 133 is provided to be movable so that the chucking pin portion 133 is in contact with the side surface of the substrate (W).
  • the chucking pin 133 is movable enough to increase or decrease the diameter of the virtual circle formed by the chucking pin 133, and does not limit the movement structure of the chucking pin 133.
  • Body portion 140 has a cylindrical shape with an open top. Accordingly, the substrate W may be loaded or unloaded through the upper portion of the open body 140.
  • the body portion 140 is provided to surround the spin head portion 130. Accordingly, the inside of the cylindrical body portion 140 is provided as a space in which the spin head portion 130 can be rotated.
  • Body portion 140 prevents the processing liquid used to clean or dry the substrate (W) to splash or outflow.
  • a discharge part 150 is formed through the lower part of the body part 140 so that the treatment liquid used to clean or dry the substrate W may be discharged to the outside of the body part 140.
  • the exhaust unit 160 is formed through the lower portion of the body portion 140 so that the gas generated from the second fluid or the processing liquid in the form of gas can be discharged to the outside of the body portion 140.
  • the treatment liquid discharged to the outside of the body portion 140 may be recovered and recycled.
  • the body portion 140 may be divided into a first body portion 141, a second body portion 142, and a third body portion 143.
  • Each of the body parts 141, 142, and 143 may recover different types of treatment liquids from among treatment liquids used to clean or dry the substrate W.
  • the third body portion 143 provides a cylindrical shape with an upper portion open to surround the spin head portion 130, and the second body portion 142 has an upper portion open to surround the third body portion 143.
  • a cylindrical shape is provided, and the first body part 141 provides a cylindrical shape having an upper portion open to surround the second body part 142.
  • the lower portion of the first body portion 141 is provided with a first discharge portion 151 and the first exhaust portion 161, the lower portion of the second body portion 142, the second discharge portion 152 and the first The second exhaust unit 162 is provided, and the third discharge unit 153 and the third exhaust unit 163 are provided below the third body unit 143.
  • the processing liquid used to clean or dry the substrate W is supplied to the substrate W to provide a space between the first body portion 141 and the second body portion 142 as the spin head 130 rotates. It is scattered into the space between the second body portion 142 and the third body portion 143 or the inner space of the third body portion 143.
  • the treatment liquid scattered into the space between the first body portion 141 and the second body portion 142 and the gas generated from the treatment liquid are respectively discharged through the first discharge portion 151 and the first exhaust portion 161. It is discharged to the outside of the body 140.
  • the treatment liquid scattered into the space between the second body portion 142 and the third body portion 143 and the gas generated from the treatment liquid are respectively passed through the second discharge portion 152 and the second exhaust portion 162. It is discharged to the outside of the body 140.
  • the treatment liquid scattered into the inner space of the third body 143 and the gas generated from the treatment liquid are discharged to the outside through the third discharge unit 153 and the third exhaust unit 163, respectively.
  • the spin unit 100 may further include a lifting unit (not shown) for adjusting the height of the spin head unit 130.
  • the lifting unit (not shown) may move the spin head 130 up and down or move the body 140 up and down.
  • the spin head 130 is loaded when the substrate W is loaded onto the spin head 130 or the unloaded substrate W from the spin head 130.
  • the height of the spin head 130 may be adjusted through a lifting unit (not shown) to protrude from the upper portion of the body 140.
  • the spin head part is provided through a lifting unit (not shown) so that the processing liquid supplied to clean or dry the substrate W flows into the predetermined body parts 141, 142, and 143.
  • the height of the 130 can be adjusted.
  • the first supply unit 200 supplies a first fluid to the substrate (W).
  • the first supply unit 200 supplies a first fluid to the substrate W that is rotated while being swinged apart from the substrate W through the swing unit 400.
  • the first supply unit 200 includes a first nozzle part 210, a first supply part 220, and a first flow path part 230.
  • the first nozzle unit 210 is provided in the swing unit 400 to discharge the first fluid toward the substrate W, and the first supply unit 220 supplies the first fluid to the first nozzle unit 210. .
  • the first flow path part 230 connects the first nozzle part 210 and the first supply part 220 to form a supply path of the first fluid.
  • the heating unit 300 heats the first fluid supplied from the first supply unit 200 as well as the substrate W by radiant heat.
  • the heating unit 300 includes a heat generating unit 310, a diverging unit 320, and an induction unit 330.
  • the heat generator 310 generates radiant heat for heating not only the substrate W but also the first fluid supplied to the substrate W.
  • the radiating unit 320 radiates radiant heat generated by the heat generating unit 310.
  • the diverging unit 320 may be made of an infrared lamp or an ultraviolet lamp.
  • the induction part 330 surrounds the diverging part 320 so that radiant heat emitted from the diverging part 320 is directed toward the substrate W.
  • the induction part 330 is provided with an opening 331 to expose the diverging part 320 toward the substrate W.
  • the swing unit 400 swings the first supply unit 200 and the heating unit 300.
  • the swing unit 400 includes a swing unit 410, a first swing driver 420, and a second swing driver 430.
  • the swing unit 410 is provided with a first supply unit 200.
  • the swing unit 410 is provided with a first nozzle unit 210 to supply the first fluid toward the substrate (W).
  • the first swing driving part 420 swings the swing part 410.
  • the first swing driver 420 includes a first swing shaft 421 and a first driver 423.
  • the first driving unit 423 generates a rotational force for swinging the swing unit 410.
  • the first driving unit 423 may be provided as a mechanism having a driving unit such as a motor for generating a rotational force, a belt for transmitting the rotational force generated from the driving unit to the first swing shaft 421, and a power transmission unit such as a chain. .
  • the first swing shaft 421 transmits the rotational force generated by the first driving unit 423 to the swing unit 410.
  • the second swing driving part 430 is spaced apart from the first swing driving part 420 to swing the heating unit 300.
  • the second swing driver 430 includes a second swing shaft 431 and a second driver 433.
  • the second driving unit 433 generates a rotational force for swinging the heating unit 300.
  • the second driving unit 433 may be provided as a mechanism having a driving unit, such as a motor for generating a rotational force, and a belt, a power transmission unit, such as a chain, for transmitting the rotational force generated from the driving unit to the second swing shaft 431. .
  • a driving unit such as a motor for generating a rotational force
  • a power transmission unit such as a chain
  • the second swing shaft 431 transmits the rotational force generated by the second driving unit 433 to the heating unit 300.
  • the second swing shaft 431 may be coupled to the heat generator 310 of the heating unit 300.
  • the swing unit 410 and the heating unit 300 are spaced apart from each other at different heights from the substrate W so as not to interfere with each other when the swing unit 400 swings through the swing unit 400.
  • the substrate processing apparatus further includes a second supply unit 500.
  • the second supply unit 500 supplies a second fluid to the substrate W while swinging by the swing unit 400.
  • the second supply unit 500 supplies a second fluid to the substrate W that is rotated while being swinged apart from the substrate W through the swing unit 400.
  • the second supply unit 500 includes a second nozzle part 510, a second supply part 520, and a second flow path part 530.
  • the second nozzle part 510 is provided in the swing part 410 of the swing unit 400 so that the second fluid is discharged toward the substrate W, and the second supply part 520 is provided in the second nozzle part 510. Supply the second fluid.
  • the second flow path part 530 connects the second nozzle part 510 and the second supply part 520 to form a supply path of the second fluid.
  • first nozzle part 210 and the second nozzle part 510 are formed to be spaced apart from each other on the swing part 410.
  • the substrate processing apparatus further includes a control unit 600.
  • the control unit 600 regulates the temperature of the radiant heat.
  • the control unit 600 includes a measuring unit 610 and a control unit 620.
  • the measuring unit 610 measures the temperature of the radiant heat.
  • the measuring part 610 may be fixed to the induction part 330 of the heating unit 300 through the support bracket part 611. Although not shown, the measuring unit 610 may be fixed to the swing unit 410 of the swing unit 400 through the support bracket unit 611.
  • the controller 620 adjusts the temperature of the radiant heat generated by the heating unit 300 according to the temperature of the radiant heat measured by the measuring unit 610.
  • the controller 620 may control the temperature of the radiant heat by intermittently controlling the heat generating unit 310 of the heating unit 300 according to the measured radiant heat temperature.
  • control unit 600 may further include a cooling unit (not shown).
  • the cooling unit (not shown) is provided in the induction unit 330 of the heating unit 300, and cools radiant heat emitted from the diverging unit 320 according to the operation of the control unit 620.
  • FIG. 3 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 4 is a plan view illustrating an operating state of the substrate processing apparatus according to an embodiment of the present invention.
  • the substrate W is mounted on the spin head 130 so that the pattern surface of the substrate W faces upward.
  • the spin head portion 130 may be raised to the upper side of the body portion 140.
  • the chucking pin 133 is moved to support and fix the substrate W to the spin head 130.
  • the spin head 130 is rotated by the rotational force of the rotating unit 110, the substrate W is rotated while being supported by the spin head 130.
  • the swing unit 410 of the swing unit 400 swings in the region corresponding to the diameter of the substrate W or between the rotation center of the substrate W from the edge of the substrate W by the first swing driver 420. Are exercised.
  • the heating unit 300 is swinged by the second swing driver 430 between the edge of the substrate W and the rotation center of the substrate W or in an area corresponding to the diameter of the substrate W.
  • the first fluid and the second fluid are respectively supplied to the pattern surface of the substrate W through the first nozzle part 210 and the second nozzle part 510 provided in the swing part 410.
  • the first fluid is uniformly applied to the pattern surface of the substrate W as the first fluid is supplied to the pattern surface of the substrate W in a liquid state.
  • the heating unit 300 heats the first fluid and the substrate W by radiant heat. Then, since the first fluid lowers the surface tension of the first fluid in the liquid state as it is heated by radiant heat, the first fluid is sufficiently coated between the fine patterns formed on the pattern surface of the substrate W, so that the first fluid is applied to the substrate W. It can be easily adhered to the pattern surface.
  • control unit 600 may control the temperature of the radiant heat so that the first fluid does not evaporate and is sufficiently coated between the fine patterns formed on the pattern surface of the substrate W.
  • control unit 600 may control the temperature of the radiant heat so as to be 60 degrees or more and 85 degrees or less.
  • the first fluid When the temperature of the radiant heat is smaller than the lower limit, the first fluid cannot be sufficiently applied between the fine patterns formed on the pattern surface of the substrate W, and thus the substrate W cannot be stably cleaned or dried. In addition, when the temperature of the radiant heat is greater than the upper limit, the first fluid may be evaporated and the first fluid may not be applied between the fine patterns.
  • control unit 600 may control the temperature of the radiant heat to 65 degrees or more and 80 degrees or less. More preferably, the control unit 600 may control the temperature of the radiant heat to 68 degrees or more and 75 degrees or less. More preferably, the control unit 600 may control the temperature of the radiant heat to 68 degrees or more and 72 degrees or less.
  • control unit 620 of the control unit 600 may cool the radiant heat emitted from the diverging unit 320 of the heating unit 300 through a cooling unit (not shown).
  • the swing unit between the rotation center of the substrate W from the edge of the substrate (W) in which the heating unit 300 is rotated, or the diameter of the substrate (W) in which the heating unit 300 is rotated In parallel with the rotation of the substrate W as it swings in the corresponding region, first, it is possible to prevent heat loss from occurring at the edge of the substrate W, and secondly, the first fluid supplied to the substrate W.
  • the temperature compensation effect is exhibited with respect to the temperature or the pattern surface temperature of the substrate W.
  • the entirety of the first fluid or the pattern surface of the substrate W supplied to the substrate W may be uniformly heated.
  • the first fluid applied to the pattern surface of the substrate W is separated from the substrate W by the centrifugal force due to the rotation of the substrate W, and thus the body portion 140 through the discharge part 150 of the body portion 140. Can be discharged to outside.
  • the second fluid is supplied to the substrate W in the form of a gas through the second nozzle unit 510 of the second supply unit 500.
  • the first fluid remaining on the pattern surface of the substrate W may be stably removed.
  • the second fluid may be separated from the substrate W by the centrifugal force due to the rotation of the substrate W and discharged to the outside of the body 140 through the exhaust 160 of the body 140.
  • FIG. 5 is a side cross-sectional view schematically illustrating a substrate processing apparatus according to another embodiment of the present invention
  • FIG. 6 is a perspective view illustrating a fixing part according to another embodiment of the present invention.
  • a substrate processing apparatus may include a spin unit 100, a first supply unit 200, a heating unit 300, and a swing unit 400. Include.
  • the substrate processing apparatus may further include a second supply unit 500.
  • the substrate processing apparatus according to another embodiment of the present invention may further include a control unit 600.
  • the spin unit 100, the first supply unit 200, the heating unit 300, the swing unit 400, the second supply unit 500, and the control unit ( 600 is denoted by the same reference numerals for the same configuration as that according to an embodiment of the present invention, description thereof will be omitted.
  • the swing unit 400 includes a swing unit 410, a first swing driving unit 420, and a fixing unit 440.
  • the swing unit 410 is provided with a first supply unit 200.
  • the swing part 410 may be provided with at least one of the first nozzle part 210 and the second nozzle part 510 to supply the first fluid or the second fluid toward the substrate W.
  • the first swing driving part 420 swings the swing part 410.
  • the first swing driver 420 includes a first swing shaft 421 and a first driver 423.
  • the first driving unit 423 generates a rotational force for swinging the swing unit 410.
  • the first driving unit 423 may be provided as a mechanism having a driving unit such as a motor for generating a rotational force, a belt for transmitting the rotational force generated from the driving unit to the first swing shaft 421, and a power transmission unit such as a chain. .
  • the first swing shaft 421 transmits the rotational force generated by the first driving unit 423 to the swing unit 410.
  • the fixing part 440 fixes the heating unit 300 to the swinging part 410.
  • the fixing part 440 includes a first bracket part 441 and a second bracket part 442.
  • the first bracket part 441 fixes the swing part 410
  • the second bracket part 442 is provided in the first bracket part 441, and fixes the heating unit 300.
  • the first bracket part 441 has a first seating part 413 to which the swing part 410 is fixed, and a second seating part 414 to which the heating unit 300 is fixed to the second bracket part 442. To form.
  • the second bracket portion 442 is provided with an auxiliary bracket portion 443 may improve the fixing force of the heating unit 300.
  • the swing unit 400 may include a second swing driving part 430, a swing part 410, and a fixing part 440.
  • the second swing driving part 430 is spaced apart from the first swing driving part 420 to swing the heating unit 300.
  • the second swing driver 430 includes a second swing shaft 431 and a second driver 433.
  • the second driving unit 433 generates a rotational force for swinging the heating unit 300.
  • the second driving unit 433 may be provided as a mechanism having a driving unit, such as a motor for generating a rotational force, and a belt, a power transmission unit, such as a chain, for transmitting the rotational force generated from the driving unit to the second swing shaft 431. .
  • a driving unit such as a motor for generating a rotational force
  • a power transmission unit such as a chain
  • the second swing shaft 431 transmits the rotational force generated by the second driving unit 433 to the heating unit 300.
  • the swing unit 410 is provided with a first supply unit 200.
  • the swing part 410 may be provided with at least one of the first nozzle part 210 and the second nozzle part 510 to supply the first fluid or the second fluid toward the substrate W.
  • the fixing part 440 fixes the heating unit 300 to the swinging part 410.
  • the fixing part 440 includes a first bracket part 441 and a second bracket part 442.
  • the first bracket portion 441 forms a first seating portion 413 to which the swing portion 410 is fixed, and the second bracket portion 442 is provided in the first bracket portion 441 and the heating unit 300. ) Forms a second seating portion 414 to which it is fixed.
  • FIG. 7 is a plan view schematically showing a substrate processing apparatus according to another embodiment of the present invention
  • FIG. 8 is a plan view showing an operating state of the substrate processing apparatus according to another embodiment of the present invention.
  • the swing unit 410 of the heating unit 300 and the swing unit 400 is formed by the first swing driving unit 420 from the edge of the substrate W to the rotation center of the substrate W or the diameter of the substrate W. In the area corresponding to the swing movement.
  • the first fluid and the second fluid are respectively supplied to the pattern surface of the substrate W through the first nozzle part 210 and the second nozzle part 510 provided in the swing part 410.
  • the first fluid is uniformly applied to the pattern surface of the substrate W as the first fluid is supplied to the pattern surface of the substrate W in a liquid state.
  • the heating unit 300 heats the first fluid and the substrate W by radiant heat. Then, since the first fluid lowers the surface tension of the first fluid in the liquid state as it is heated by radiant heat, the first fluid is sufficiently applied between the fine patterns formed on the pattern surface of the substrate W, so that the first fluid is applied to the substrate W. It can be applied in close contact with the pattern surface stably.
  • control unit 600 may control the temperature of the radiant heat so that the first fluid does not evaporate and is sufficiently coated between the fine patterns formed on the pattern surface of the substrate W.
  • control unit 620 of the control unit 600 may cool the radiant heat emitted from the diverging unit 320 of the heating unit 300 through a cooling unit (not shown).
  • the heating unit 300 swings an area corresponding to the diameter of the substrate W or between the edge of the substrate W to which the heating unit 300 is rotated, the center of rotation of the substrate W, or the substrate W Parallel to the rotation of the first, it is possible to prevent the heat loss is generated at the edge of the substrate (W), and second, with respect to the temperature of the first fluid supplied to the substrate (W) and the pattern surface temperature of the substrate (W) Third, the first fluid supplied to the substrate W and the entire pattern surface of the substrate W may be uniformly heated.
  • the first fluid applied to the pattern surface of the substrate W is separated from the substrate W by the centrifugal force due to the rotation of the substrate W, and thus the body portion 140 through the discharge part 150 of the body portion 140. Can be discharged to outside.
  • the second fluid may be supplied to the substrate W in the form of a gas through the second nozzle unit 510 of the second supply unit 500.
  • the first fluid remaining on the pattern surface of the substrate W may be easily removed.
  • the second fluid may be separated from the substrate W by the centrifugal force due to the rotation of the substrate W and discharged to the outside of the body 140 through the exhaust 160 of the body 140.
  • the swing unit 410 of the heating unit 300 and the swing unit 400 is connected to the substrate W by the second swing driving unit 430.
  • a swing motion may be performed between an edge and a rotation center of the substrate W or in an area corresponding to the diameter of the substrate W.
  • FIG. 9 is a graph illustrating a heating state of a substrate in a general substrate processing apparatus
  • FIG. 10 is a diagram illustrating a first modified example in a substrate processing apparatus according to an embodiment of the present invention or a substrate processing apparatus according to another embodiment of the present invention.
  • 11 is a plan view illustrating a heating state of a substrate according to an embodiment of the present disclosure, and FIG. 11 illustrates a heating state of a substrate according to a second modification example in a substrate processing apparatus according to an embodiment of the present invention or a substrate processing apparatus according to another embodiment of the present invention.
  • 12 is a plan view showing a state, and FIG. 12 illustrates a heating state of a substrate according to a first modification or a second modification in a substrate processing apparatus according to an embodiment of the present invention or a substrate processing apparatus according to another embodiment of the present invention.
  • the surface heating state of the substrate is as follows.
  • the temperature of the radiant heat rises from the edge of the substrate toward the center of the substrate so that the radiant heat is the highest at the center of the substrate.
  • the shape of radiant heat may be limited, or the intensity of radiant heat emitted from the heating unit may be adjusted.
  • the radiant heat emitted from the diverging portion may be radiated in a fan shape toward the edge of the substrate at the center of the substrate.
  • the shape of the diverging portion of the heating unit may be formed in a fan shape.
  • the diverging part may be formed of a surface light source including a fan shape, and the opening shape of the guide part may be formed in a fan shape.
  • the diverging part includes a first diverging part that radiates radiant heat in a fan shape from the center of the substrate toward the edge of the substrate, and further extends from the first diverging part to further radiate radiant heat to the central part of the substrate. It may include.
  • the second diverging part may extend a width at which the radiant heat is radiated toward the edge of the substrate to face the first diverging part at the central side of the substrate.
  • the second diverging part may maintain or reduce a width at which the radiant heat is radiated toward the edge of the substrate so as to face the first diverging part at the central side of the substrate.
  • the opening of the induction part includes a first opening (not shown) that guides radiant heat in a fan shape from the center of the substrate toward the edge of the substrate, and extends from the first opening to radiate heat to the center of the substrate.
  • the guide may further include a second opening.
  • the radiant heat emitted from the diverging portion may increase in intensity from the center of the substrate toward the edge of the substrate.
  • the intensity of radiant heat emitted from the diverging part of the heating unit can be adjusted according to the longitudinal direction of the diverging part.
  • the intensity of the radiant heat can be adjusted by adjusting the coiling interval or the thickness of the coil provided in the diverging portion.
  • the diverging part includes a first diverging part in which the intensity of radiant heat increases from the center of the substrate toward the edge of the substrate, and extends from the first diverging part to further radiate radiant heat to the central part of the substrate.
  • a second diverging unit may be further included.
  • the intensity of radiant heat emitted from the second diverging part may be greater than the intensity of the lowest radiant heat of the first diverging part and smaller than the intensity of the maximum radiant heat of the first diverging part.
  • the entire substrate can be heated uniformly.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention a trait à un appareil de traitement de substrat. L'appareil de traitement de substrat selon la présente invention comprend : une unité de rotation permettant de faire tourner un substrat qui est supporté sur celle-ci ; une première unité d'alimentation permettant de fournir un premier fluide au substrat ; une unité de chauffage permettant de chauffer le substrat et le premier fluide qui est fourni par la première unité d'alimentation au moyen d'une chaleur rayonnante ; et une unité de balancement permettant de faire pivoter la première unité d'alimentation et l'unité de chauffage.
PCT/KR2013/005319 2012-06-18 2013-06-17 Appareil de traitement de substrat WO2013191421A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0065262 2012-06-18
KR1020120065262A KR20130142033A (ko) 2012-06-18 2012-06-18 기판 처리 장치

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WO2013191421A1 true WO2013191421A1 (fr) 2013-12-27

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KR (1) KR20130142033A (fr)
TW (1) TW201405667A (fr)
WO (1) WO2013191421A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016032242A1 (fr) * 2014-08-27 2016-03-03 주식회사 제우스 Appareil de traitement de substrat et procédé de traitement de substrat
CN113053777A (zh) * 2019-12-26 2021-06-29 细美事有限公司 基板加热单元、基板处理装置以及基板处理方法

Families Citing this family (5)

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KR20150122903A (ko) * 2014-04-23 2015-11-03 주식회사 제우스 기판온도 안정화 장치와 방법
KR20150122902A (ko) * 2014-04-23 2015-11-03 주식회사 제우스 기판 처리온도 모니터링장치와 기판 처리온도 모니터링방법
KR102064804B1 (ko) * 2014-08-27 2020-01-13 주식회사 제우스 기판 처리장치 및 기판 처리방법
TWI661477B (zh) * 2015-06-18 2019-06-01 日商思可林集團股份有限公司 基板處理裝置
KR20210157574A (ko) * 2020-06-22 2021-12-29 주식회사 제우스 기판처리장치

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JP2001085383A (ja) * 1999-09-13 2001-03-30 Shimada Phys & Chem Ind Co Ltd 基板処理装置
KR100757417B1 (ko) * 2006-08-04 2007-09-11 삼성전자주식회사 웨이퍼 세정 장치
US20080268553A1 (en) * 2007-04-27 2008-10-30 Cheng Hsun Chan Electroless plating apparatus with non-liquid heating source
KR20090093835A (ko) * 2008-02-28 2009-09-02 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2001085383A (ja) * 1999-09-13 2001-03-30 Shimada Phys & Chem Ind Co Ltd 基板処理装置
KR100757417B1 (ko) * 2006-08-04 2007-09-11 삼성전자주식회사 웨이퍼 세정 장치
US20080268553A1 (en) * 2007-04-27 2008-10-30 Cheng Hsun Chan Electroless plating apparatus with non-liquid heating source
KR20090093835A (ko) * 2008-02-28 2009-09-02 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016032242A1 (fr) * 2014-08-27 2016-03-03 주식회사 제우스 Appareil de traitement de substrat et procédé de traitement de substrat
CN113053777A (zh) * 2019-12-26 2021-06-29 细美事有限公司 基板加热单元、基板处理装置以及基板处理方法
US11923213B2 (en) 2019-12-26 2024-03-05 Semes Co., Ltd. Substrate heating unit, substrate processing apparatus, and substrate processing method

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TW201405667A (zh) 2014-02-01

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