WO2017030315A1 - Support d'échantillon pour appareil de dépôt, et appareil de dépôt comportant ledit support d'échantillon - Google Patents

Support d'échantillon pour appareil de dépôt, et appareil de dépôt comportant ledit support d'échantillon Download PDF

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Publication number
WO2017030315A1
WO2017030315A1 PCT/KR2016/008782 KR2016008782W WO2017030315A1 WO 2017030315 A1 WO2017030315 A1 WO 2017030315A1 KR 2016008782 W KR2016008782 W KR 2016008782W WO 2017030315 A1 WO2017030315 A1 WO 2017030315A1
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WO
WIPO (PCT)
Prior art keywords
sample
film
sample holder
deposition
inner shield
Prior art date
Application number
PCT/KR2016/008782
Other languages
English (en)
Korean (ko)
Inventor
안경준
김찬호
정성훈
Original Assignee
(주) 에스엔텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150116632A external-priority patent/KR101728401B1/ko
Priority claimed from KR1020150188066A external-priority patent/KR101853063B1/ko
Priority claimed from KR1020160013911A external-priority patent/KR101778592B1/ko
Priority claimed from KR1020160013912A external-priority patent/KR101790617B1/ko
Priority claimed from KR1020160060865A external-priority patent/KR101822125B1/ko
Priority claimed from KR1020160060862A external-priority patent/KR101800197B1/ko
Application filed by (주) 에스엔텍 filed Critical (주) 에스엔텍
Publication of WO2017030315A1 publication Critical patent/WO2017030315A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields

Definitions

  • the present invention relates to a sample holder for a deposition apparatus and a deposition apparatus having the sample holder, and more particularly to a sample holder for a deposition apparatus capable of high-quality deposition by effectively controlling the temperature of the sample to be deposited and a sample holder for the sample holder will be.
  • a method of attaching a shielding film to the surface of the sample is generally used.
  • the applicant is performing the electromagnetic shielding of the sample using the vacuum deposition method, after attaching the sample to the sample holder, the sample holder is placed in the vacuum chamber to perform the deposition.
  • the sample is attached to the sample holder using an adhesive film.
  • the pressure-sensitive adhesive film causes thermal deformation due to an increase in the internal temperature of the vacuum chamber, the adhesive film is not in close contact with the sample holder, thereby reducing the temperature control effect of the sample.
  • bubbles may exist between the adhesive film and the sample holder, thereby creating a bubble area that is not partially adhered to the bubble zone, which prevents the sample from sticking to the sample holder to control the temperature of the sample. Make it difficult to perform.
  • the deposition material when the deposition material is scattered in the vacuum chamber, the deposition material is scattered and deposited in an undesired space inside the vacuum chamber, which shortens the cleaning cycle for cleaning the inside of the vacuum chamber, thereby lowering the operation rate of the deposition chamber apparatus. Act as a cause.
  • the present invention has been made to solve the above problems and an object of the present invention is to maximize the adhesion between the sample and the sample adapter to increase the temperature control efficiency of the sample, the sample holder that can greatly improve the quality of electromagnetic shielding deposition and its To provide a deposition apparatus having a sample holder.
  • an object of the present invention has a sample holder and the sample holder that can easily perform the temperature control of the sample by improving the thermal conductivity efficiency even if there is a partially non-closed bubble region between the film and the sample holder for sample attachment It is to provide a deposition apparatus.
  • an object of the present invention is to provide a deposition apparatus that can effectively perform the cleaning and temperature management by discharging the inner shield and weights provided in the vacuum chamber to the outside.
  • the present invention provides a sample holder for mounting a sample to be deposited in the vacuum chamber, the temperature control chuck (temperature) capable of temperature control; And a sample adapter stacked on the temperature control chuck, and having a sample attached to the upper surface, and transferring the heat of the sample to the temperature control chuck or transferring the heat of the temperature control chuck to the sample. It includes ;, the upper surface of the sample adapter provides a sample holder, characterized in that the curved surface.
  • the temperature control chuck and the sample adapter are integrally configured.
  • a buffer pad is coated or attached to the top surface of the sample adapter to adhere the film to perform a heat conduction function.
  • the top width of the sample adapter is less than the width of the film, or the top area of the sample adapter is less than the area of the film.
  • a plurality of grooves are formed on the top surface of the sample adapter.
  • an inside of the sample adapter is provided with an exhaust line which, when mounted on the film, exhausts the air in the groove to the outside so that the film adheres to the top surface of the sample adapter.
  • an insulating layer is coated or attached to the top surface of the sample adapter.
  • the film when the film is attached to the top edge of the film, and the film is mounted on the sample adapter, the film is pressed against the edge of the film that is not in contact with the sample adapter so that the film It includes a pressure block to be in close contact with the upper surface.
  • the sample adapter is embedded with a heat conduction gas line for receiving the heat conduction gas from the outside and to discharge to the upper surface of the temperature control chuck, wherein the heat conduction gas is the upper surface of the sample adapter and the film It is discharged to the bubble region generated in between to conduct heat conduction between the sample and the sample adapter.
  • the present invention is a vacuum chamber; And a sample holder fixed or moved inside the vacuum chamber and configured to mount a sample, which is a deposition target, on an upper surface thereof.
  • the sample holder is provided with a plurality.
  • the temperature control chuck is embedded with a fluid flow line through which the temperature control fluid can flow.
  • the fluid flow lines of the temperature control chucks are connected to each other to constitute one fluid flow line.
  • the interior of the vacuum chamber is a cathode disposed opposite the sample holder and scattering deposition material into the sample; And an inner shield positioned between the cathode and the sample holder, and blocking an area of the region between the cathode and the sample holder to limit the area where the deposition material is scattered.
  • the weight portion that can move up and down inside the inner shield is provided below the edge of the opening region of the inner shield, the weight is the weight of the inner shield when the inner shield is lowered or the sample holder is raised The film is pressed against the top of the sample holder by contacting the upper edge of the film to press the film toward the sample holder.
  • the weight is exposed to the lower portion of the inner shield by its own weight, the inner shield is lowered or the sample holder is raised to contact the film, the inner shield is further lowered or the sample holder When is raised, it is inserted into the inner shield to provide pressure to the film by its own weight.
  • a pressure block for supporting the shape of the film is attached to the upper surface of the edge of the film, the weight presses the upper surface of the pressure block so that the film is in close contact with the sample holder, the weight added
  • the inner space of the vacuum chamber is divided into an upper space deposition space and a lower space non-deposition space based on the inner shield and the film.
  • the inner shield between the inner shield and the sample holder is provided with a weight that can be moved up and down, the upper edge of the film is attached to the pressure block for supporting the shape of the film, the lower surface of the weight
  • the inner shield By contacting the upper surface of the pressure block to press the pressure block toward the sample holder to bring the film in close contact with the upper surface of the sample holder, the inner shield is lowered or the sample holder is raised to the upper surface of the weight
  • an inner space of the vacuum chamber is divided into an upper space and a non-deposition space, which is an upper space, based on the inner shield and the film.
  • the inner shield and the weight may be separated out of the vacuum chamber or discharged separately or together.
  • the inner shield between the inner shield and the sample holder is provided with a weight that can be moved up and down, the upper edge of the film is attached to the pressure block for supporting the shape of the film, the lower surface of the weight Contacting the upper surface of the pressing block to press the pressing block toward the sample holder to bring the film into close contact with the upper surface of the sample holder, the inner shield is fixed inside the vacuum chamber, and the sample holder is raised
  • the inner space of the vacuum chamber is a non-deposited deposition space and the lower space of the upper space relative to the inner shield and the film Partitioned into a space, the weight is separated out of the vacuum chamber It may be invoked.
  • the inside of the vacuum chamber is further provided with a cylindrical cathode for scattering the deposition material
  • the surface of the cathode during the deposition track plasma is formed in the longitudinal direction, of the track plasma, in the longitudinal direction of the cathode
  • Two parallel section plasmas are formed at a predetermined angle between 10 degrees and 180 degrees with respect to the axis of rotation of the cathode.
  • a track-shaped N-pole magnet and an S-pole magnet are spaced apart from each other in the circumferential direction, and the track plasma is inside the magnetic field generated between the N-pole magnet and the S-pole magnet. And the N pole magnet and the S pole magnet are rotated by a predetermined angle about the axis of rotation of the cathode, so that the linear section plasmas rotate along the outer circumference of the cylindrical electrode to perform deposition.
  • the sample holder is moved or reciprocated in one direction in the vacuum chamber to deposit a deposition layer on the sample, the N pole magnet and the S pole magnet is the linear interval plasma is moved Rotate to face the sample.
  • the sample is a sample of a polygon having a predetermined height and is mounted on the sample holder such that the side edges face the direction in which the sample holder moves.
  • the cathode may be provided spaced apart from each other in parallel to each other in the vacuum chamber.
  • the deposition apparatus having the sample holder and the sample holder of the present invention, by maximizing the adhesion between the sample and the sample holder to precisely control the temperature of the sample there is an advantage that can greatly improve the quality of electromagnetic shielding deposition.
  • the sample holder of the present invention and the deposition apparatus having the sample holder, it is possible to maintain the insulation between the sample and the temperature control chuck has the advantage of preventing electrical damage to the sample during the electromagnetic shielding deposition.
  • the vapor deposition apparatus having the sample holder and the sample holder of the present invention, even if a bubble region that does not partially contact between the film and the sample adapter occurs by supplying a heat conduction gas for thermal conductivity to the bubble region to increase the thermal conductivity efficiency There is an effect that can improve the temperature control efficiency of the sample.
  • the sample holder of the present invention and the deposition apparatus having the sample holder, even if the size of the film for sample attachment is limited by using a plurality of sample holders can be deposited by mounting a large number of samples at once There is an advantage.
  • the structure is simple, and the film can be deformed because it can be pressed with an appropriate load. There is an advantage that can be prevented from being broken.
  • the sample holder of the present invention and the deposition apparatus having the sample holder, it is possible to deposit the deposition material only in the deposition space in the internal space of the vacuum chamber, so that the deposition material is deposited in the non-deposition space that does not require deposition. It can prevent and extend the cleaning period inside a vacuum chamber.
  • the sample holder of the present invention since the inner shield and the weight can be discharged to the outside of the vacuum chamber, it is easy to cool and clean the inner shield and the weight. have.
  • FIG. 1 is a view showing a sample holder and a deposition apparatus according to a first embodiment of the present invention
  • FIG. 2 is a view showing in detail the configuration of the sample holder according to the first embodiment of the present invention
  • FIG. 3 is a view for explaining the pressure block of the sample holder according to the first embodiment of the present invention
  • FIG. 4 is a view showing that the sample beacon according to the first embodiment of the present invention is configured integrally
  • FIG. 5 is a view for explaining a sample adapter of the sample holder according to the first embodiment of the present invention.
  • FIG. 6 is a view showing a groove of a sample holder according to the first embodiment of the present invention.
  • FIG. 7 is a view showing another form of the sample holder according to the first embodiment of the present invention.
  • FIG. 8 is a view for explaining a film of the sample holder according to the first embodiment of the present invention.
  • FIG. 9 is a view for explaining the insulating layer of the sample holder according to the first embodiment of the present invention.
  • FIG. 10 is a view for explaining a cathode of a deposition apparatus according to a first embodiment of the present invention.
  • FIG. 11 is a view for explaining the plasma formation direction of the cathode of the deposition apparatus according to the first embodiment of the present invention
  • FIG. 12 is a view for explaining the movement of the sample and the rotation of the magnet of the deposition apparatus according to the first embodiment of the present invention
  • FIG. 13 is a view for explaining an attachment form of a sample of the deposition apparatus according to the first embodiment of the present invention.
  • FIG. 14 is a view showing a sample holder and a deposition apparatus according to a second embodiment of the present invention.
  • FIG. 15 is a view for explaining a heat conduction gas layer in a sample holder and a deposition apparatus according to a second embodiment of the present invention.
  • FIG. 16 is a view showing a sample holder and a deposition apparatus according to a third embodiment of the present invention.
  • FIG. 17 shows a first embodiment of a fluid flow line of a sample holder and a deposition apparatus according to a third embodiment of the present invention
  • FIG. 19 is a third embodiment of a fluid flow line of a sample holder and a deposition apparatus according to a third embodiment of the present invention.
  • FIG. 20 is a view illustrating a pressure block frame of a sample holder and a deposition apparatus according to a third embodiment of the present invention.
  • FIG. 21 shows a deposition apparatus according to a fourth embodiment of the present invention
  • FIG. 22 is a view of the inner shield of the deposition apparatus according to the fourth embodiment of the present invention as viewed from the top,
  • FIG. 23 is a bottom view of the inner shield of the deposition apparatus according to the fourth embodiment of the present invention.
  • 24 to 26 are views for explaining a deposition process using a deposition apparatus according to a fourth embodiment of the present invention.
  • 28 to 31 are views for explaining a process of depositing using a deposition apparatus according to a fifth embodiment of the present invention.
  • FIG 33 is a view showing a state after the deposition of the deposition apparatus according to the sixth embodiment of the present invention.
  • the sample holder 100 is a holder for depositing the sample 10, which is a deposition target, in the vacuum chamber 200.
  • sample holder 100 may be fixed within the vacuum chamber 200 during the deposition process, may reciprocate, and may pass through the vacuum chamber 200.
  • the sample holder 100 may allow deposition to be performed in a batch type inside the vacuum chamber 200 and to perform deposition in an in-line type.
  • the type of the deposition is not particularly limited, but the effect can be maximized in the case of electromagnetic shielding deposition with a large heat generation.
  • an electrode for forming a sputtering target or a plasma may be provided inside the vacuum chamber 200.
  • the vacuum chamber 200 may deposit an electromagnetic shielding layer on the sample 10 by physical vapor deposition or chemical vapor deposition.
  • sample holder 100 may be provided as one deposition apparatus together with the vacuum chamber 200.
  • the sample holder 100 includes a temperature control chuck 110 and a sample adapter 120.
  • sample adapter 120 may be provided separately from the temperature control chuck 110.
  • the temperature control chuck 110 is a plate capable of temperature control, and its position is fixed or moved inside the vacuum chamber 200.
  • the temperature control chuck 110 is provided with a fluid flow line 111 through which a temperature control fluid, such as a cooling fluid or a heating fluid, flows, and serves to adjust the temperature of the sample 10.
  • a temperature control fluid such as a cooling fluid or a heating fluid
  • a cooling fluid flows through the fluid flow line 111 to cool the sample 10, but a heating fluid may flow to heat the sample 10 to a predetermined deposition temperature in an initial deposition step.
  • the temperature control chuck 110 may be a cooling chuck or a heating chuck.
  • the sample adapter 120 is stacked on top of the temperature control chuck 110, and the sample 10 is placed on an upper surface thereof.
  • the temperature control chuck 110 and the sample adapter 120 are separated from each other, but as shown in FIG. 4, the temperature control chuck 110 and the sample adapter 120 are integrally formed. Can be made.
  • sample adapter 120 serves to transfer the heat of the sample 10 to the temperature control chuck 110 or to transfer the heat of the temperature control chuck 110 to the sample 10.
  • the sample adapter 120 is a heat transfer medium that allows the sample 10 to be cooled or heated.
  • sample adapter 120 is preferably attached to and fixed to the upper surface of the temperature control chuck 110, but can be raised without being attached when the position can be stably maintained.
  • the upper surface of the sample adapter 120 is a curved surface having a predetermined curvature (R).
  • the upper surface of the sample adapter 120 may be a cylindrical surface cut in the longitudinal direction as shown in Figure 5, it may be a spherical surface cut a predetermined portion of the sphere in a square or circular.
  • the curved surface means a surface having a curvature at least in part, and for example, only a corner may be included in a round shaved surface.
  • sample adapter 120 may be triangular or trapezoidal in the longitudinal section, in this case, the top surface of the sample adapter 120 may be a polygonal surface having a bent line (edge).
  • the upper surface of the sample adapter 120 is preferably a curved surface.
  • sample adapter 120 when viewed from the top, may be rectangular as shown in FIG. 6, or may be circular as shown in FIG.
  • the upper surface of the sample adapter 120 can be manufactured in a variety of polygons, ovals, etc., such as a triangle, the corner may be rounded.
  • the sample adapter 120 is not limited to the shape of the surface projected from the top, but when viewed from the side, it must be made of a curved surface having a predetermined curvature.
  • the sample 10 is attached to the top surface of the sample adapter 120 through the film 130.
  • the film 10 may be attached to the upper surface of the sample adapter 120 after attaching the sample 10 first, and then attached to the upper surface of the sample adapter 120, the sample ( 10) can be attached.
  • the film 130 may be an adhesive film, for example, a polyimide film (PI film).
  • PI film polyimide film
  • the upper surface of the sample adapter 120 should be covered by the entire film 130, for this purpose, the width (w1) and the length (w2) of the sample adapter 120 It should be smaller than the width and length of the film 130.
  • the top surface area of the sample adapter 120 should be smaller than the area of the film 130.
  • the upper surface of the sample adapter 120 is a cylindrical surface
  • only the width w1 of the sample adapter 120 may be smaller than the width of the film 130, in which case the film 130 may be in the width direction only.
  • the top surface of the sample adapter 120 may be covered.
  • sample adapter 120 may have a plurality of grooves 121 formed on an upper surface thereof.
  • the grooves 121 are connected to communicate with each other as a groove recessed to a predetermined depth on the upper surface of the sample adapter 120, it may be formed in a grid model as shown in FIG.
  • the shape of the grooves 121 there is no particular limitation on the shape of the grooves 121, and it is sufficient if the grooves 121 are evenly spread over the entire surface of the sample adapter 120 and communicate with each other.
  • the grooves 121 exhaust the air in the grooves so that the film 130 is on the top surface of the sample adapter 120. To be able to adhere closely.
  • an exhaust line for exhausting air from the grooves 121 may be formed in the sample adapter 120.
  • the film 130 when the film 130 is placed on the sample adapter 120, the film 130 is pressed by pressing an edge of the film 130 downward.
  • the pressure block 140 may be further included to be in close contact with the upper surface of the sample adapter 120 and to have a predetermined tension.
  • the pressing block 140 may be manufactured in a rectangular ring shape for pressing the entire upper edge of the film 130 toward the sample adapter 120, as shown in Figure 3, made of a metal frame Can be.
  • the pressing block 140 may be manufactured in a ring shape.
  • the vertical section of the pressing block 140 is preferably rectangular.
  • the sample adapter 120 when the film 130 is pressed by the pressure block 140, the film 130 wraps around the edge of the sample adapter 120, so that the tension can be maintained It has a predetermined height h.
  • the pressure block 140 may be manufactured in a bar shape.
  • the pressing block 140 performs a function of supporting the shape of the film 130 in addition to the function of pressing the film 130 toward the sample adapter 120.
  • a plurality of pin exposure grooves 131 may be perforated in the film 130 so that the pin 11 of the sample 10 may be exposed downward.
  • the size of the pin exposed groove 131 is smaller than the area of the sample 10, the lower edge of the sample 10 is attached to the upper edge of the pin exposed groove 131 can be fixed. .
  • the sample 10 may be adhered to the film 130 in close contact.
  • an insulating layer 150 may be attached to an upper surface of the sample adapter 120.
  • the insulating layer 150 is a layer that electrically insulates the sample adapter 120 and the sample 10 from each other.
  • the insulating layer 150 may be formed by coating an insulating material on an upper surface of the sample adapter 120, and may be formed by attaching an insulating film.
  • the sample 10 is insulated from the sample adapter 120 to prevent electrical damage to the sample 10. There is this.
  • a buffer pad may be further provided on the top surface of the sample adapter 120 to adhere the film 130.
  • the buffer pad may function as the insulating layer 150, and for example, may be a silicon pad.
  • the insulation layer 150 may not be formed on the sample adapter 120.
  • the buffer pad may be a thermal pad having a predetermined thermal conductivity, for example, a silicon pad containing a metal component.
  • the deposition apparatus may further include a cathode provided in the vacuum chamber 200 to scatter the deposition material into the sample 10.
  • the cathode 170 is a cylindrical electrode for scattering deposition material by forming a plasma.
  • the cathode 170 may be a sputtering cathode coated with a target material on the outer surface of the electrode.
  • FIG. 10 illustrates that one cathode 170 is provided inside the vacuum chamber 200, the cathode 170 may be provided in plurality in a horizontal direction.
  • the cathode 170 is provided with a track-shaped N pole magnet 171 and an S pole magnet 172 positioned to be spaced apart from the N type magnet 171 by a predetermined distance.
  • the N-pole magnet 171 and the S-pole magnet 172 is spaced apart a predetermined distance in the circumferential direction of the cathode 170.
  • the magnetic field f is cyclically generated from the N-pole magnet 171 toward the S-pole magnet 172.
  • the magnetic field f serves to constrain and form the plasma PL in the inner space.
  • the plasma PL is a track-shaped plasma (hereinafter, '') which surrounds the cathode 170 in the longitudinal direction by a magnetic field f formed by the N pole magnet 171 and the S pole magnet 172. Track plasma ').
  • the track plasma PL has two curved section plasmas connecting two linear section plasmas PL1 and PL2 and two curved section plasma PL1 and PL2 at both sides in the longitudinal direction of the cathode 170. It can be divided into (PL3, PL4).
  • the linear section plasmas PL1 and PL2 have a predetermined angle ⁇ about the center line c of the cathode 170. ) Are spaced apart.
  • N-pole magnet 171 and the S-pole magnet 172 can be rotated inside the cathode 170.
  • the linear interval plasmas PL1 and PL2 may rotate along the outer circumference of the cathode 170 to scatter the deposition material.
  • the predetermined angle ⁇ may be a predetermined angle between 10 degrees and 180 degrees, and the angle is the inside of the cathode 170 by the N pole magnet 171 and the S pole magnet 172. It is determined when it is installed in the server, and does not change after installation.
  • the N pole magnet 171 and the S pole magnet 172 can be rotated only while the relative position is fixed inside the cathode 170.
  • two cathodes positioned at the outer side of the cathodes may have an angle smaller than that of the other cathodes.
  • the deposition rate is faster in the initial deposition step or the later deposition step and the deposition rate is slower in the remaining deposition step. This is to minimize the damage received by the plasma.
  • the deposition material p is scattered in the direction toward the track plasma PL and a deposition layer is formed on the sample 10.
  • sample holder 100 may move or reciprocate in one direction in the vacuum chamber 200 to form a deposition layer on the sample 10.
  • the N-pole magnet 171 and the S-pole magnet 172 is rotated inside the cathode 170 to adjust the scattering direction and scattering amount of the deposition material.
  • linear section plasmas PL1 and PL2 face one direction and are not fixed in position, heat is not concentrated at a local part, thereby enabling low temperature deposition.
  • any one of the linear period plasmas among the linear period plasmas P1 and P2 moves the sample 10. It can rotate to face.
  • the sample 10 may be a polygonal sample having a predetermined height t, and the side edge portion e may move a direction of movement a inside the vacuum chamber 200. It may be attached to the film 130 to face.
  • the deposition material p may be evenly deposited on the side surface as well as the top surface of the sample 10.
  • FIG. 14 is a view showing a sample holder and a deposition apparatus according to a second embodiment of the present invention.
  • the sample holder 100a according to the second embodiment of the present invention is compared with the sample holder 100 according to the first embodiment of the present invention. There is a difference in embedding, and the remaining components are substantially the same.
  • the heat conduction gas line 150 receives the heat conducting gas c from an external heat conduction gas supply device 300 and discharges the gas to the upper surface of the sample adapter 120.
  • the heat conduction gas line 150 is a main line 151 directly connected to the heat conduction gas supply line 310 of the heat conduction gas supply device 300 and a branch line 152 branched from the main line 151. Can be made.
  • branch line 152 is connected to a plurality of gas discharge holes 122 drilled on the upper surface of the sample adapter 130.
  • the heat conducting gas (c) is discharged to the bubble area (b) caused by a partial adhesion between the film 130 and the sample adapter 120, the heat generated in the sample 10 to the sample
  • the adapter 120 performs the function of a heat transfer medium that transfers heat to the sample adapter 120 or the sample adapter 120.
  • the heat conducting gas c may perform a function of a cooling gas or a heating gas.
  • the heat conducting gas (c) is preferably supplied as an inert gas that does not affect the deposition process, for example, may be an argon gas.
  • the film 130 and the sample adapter 120 are spaced apart from each other by the heat conductive gas layer (c '). Can be.
  • FIG. 16 is a view showing a sample holder and a deposition apparatus according to a third embodiment of the present invention.
  • the sample holder 100b according to the third embodiment of the present invention includes a plurality of sample holders 100 according to the first embodiment of the present invention.
  • FIG. 16 illustrates that the sample holder 100c according to the third embodiment of the present invention includes four sample holders 100 spaced apart from each other in a plane, there is no particular limitation on the number.
  • sample holder 100c according to the third embodiment of the present invention, there is an advantage in that a large number of samples 10 can be deposited at one time, and different types of samples 10 can be mounted. It is mounted on different sample holders 100 to enable different deposition temperatures.
  • sample holder 100c according to the third embodiment of the present invention may include a plurality of sample holders 100a according to the second embodiment of the present invention.
  • fluid flow line 111 provided in each sample holder 100 may be connected to one line as shown in FIG. 17.
  • the structure of the fluid flow line 111 can be simplified, and there is an advantage in that one fluid can be shared.
  • the temperature of each sample holder 100 cannot be individually controlled, there is a limit to precise temperature control. have.
  • fluid flow line 111 may be embedded in each of the sample holder 100, as shown in Figure 18, may not be in communication with each other.
  • the configuration of the fluid flow line 111 is complicated and there is a problem that one fluid cannot be shared, but the temperature of the sample holders 100 can be individually controlled, which is effective in preventing local temperature rise.
  • fluid flow line 111 may be formed by partially connecting the fluid flow line of some sample holders 100 as shown in FIG. 19.
  • the sample holder 100b requires a plurality of pressing blocks 140 shown in FIG. 3 to press the films 130 placed on the respective sample holders 100.
  • the pressure blocks 140 may be provided as one pressure block frame 140a by being coupled to each other.
  • the pressure block frame 140a is formed with an open film attachment hole to attach the film 130 to the number of the sample holder 100, respectively.
  • FIG. 21 shows a deposition apparatus according to a fourth embodiment of the present invention, in which the deposition apparatus according to the fourth embodiment of the present invention is compared with the deposition apparatus according to the first embodiment of the present invention.
  • a cathode 170 and an inner shield 160 are further included.
  • the cathode 170 may be provided in the deposition apparatus according to the first, second, and third embodiments of the present invention.
  • sample holder 100 may be replaced by the sample holder 100a according to the second embodiment or the sample holder 100b according to the third embodiment.
  • the cathode 170 is an electrode provided inside the vacuum chamber 200 to allow the deposition material to be deposited on the sample 10 to be scattered.
  • the cathode 170 is coated with a target, which is a deposition material on the outside when performing physical vapor deposition, and functions as an electrode for plasma formation without coating a separate target when performing chemical vapor deposition.
  • the inner shield 160 is located between the cathode 170 and the sample holder 100 in the vacuum chamber 200, and the film 130 to which the sample 10 is attached is the inner shield 160. ) And the sample holder 100.
  • the inner shield 160 intersects a portion of the region between the cathode 170 and the sample holder 100 to limit the scattering region of the deposition material scattered from the cathode 170.
  • FIG. 22 is a view of the inner shield 160 from the top
  • FIG. 23 is a view of the inner shield 160 from the bottom.
  • the inner shield 160 is positioned in a horizontal direction between the cathode 170 and the sample holder 100 in the form of a plate.
  • the inner shield 160 has a frame shape having an open central portion, and the shielding region 160b and the deposition material falling from the cathode 170 are deposited to prevent the deposition material from falling down. There is an opening area 160a which may be present.
  • the deposition material scattering from the cathode 170 may pass through the opening region 160a and fall into the sample 10.
  • a weight frame 161 is provided on a lower surface of the inner shield 160 at a position surrounding the edge of the opening region 160a.
  • the weight 161 is inserted into the insertion hole c, which is a predetermined deep groove space along the edge of the opening region 160a, on the lower surface of the inner shield 160.
  • the weight 161 is movable up and down inside the insertion hole (c), and protrudes into the lower end of the clamp (b) and the insertion hole (c) protruding to the outside of the upper end of the weight (161).
  • the locking jaw (a) is fastened to each other so that the weight 161 is not separated below the inner shield 160.
  • the weight 161 is manufactured to correspond to the shape and size of the pressing block 140 for supporting the film 130.
  • the weight of the weight 161 is the pressure. It is applied to the block 140, the film 130 is pressed by the pressure block 140 is in close contact with the upper surface of the sample holder (100).
  • the weight 161 is naturally pushed into the insertion hole (c) of the inner shield 160, and provides a load by the weight to the pressure block 140.
  • the weight 161 may be made of stainless steel.
  • the sample 130 to which the sample 10 is attached is introduced into the vacuum chamber 200 and is spaced a predetermined distance apart from the upper portion of the sample holder 100, the sample The cradle 100 is raised or the film 130 is lowered so that the film 130 is placed on the sample cradle 100.
  • the sample holder 100 is raised to contact the pressure block 130 and the weight 161 supporting the film 130.
  • the inner shield 160 is lowered so that the pressure block 130 and the weight 161 may be in contact with each other.
  • an inner space of the vacuum chamber 200 is an upper space in which the cathode 170 is positioned based on the inner shield 160 and the film 130, and the sample holder 100. It is partitioned into a non-deposition space 200b which is a lower space in which is located.
  • the deposition material scattered by the cathode 170 is deposited only on the inner shield 160 and the film 130. It does not flow into the non-deposition space 200b.
  • the inner shield 160 is lowered or the sample holder 100 is raised so that the load by the weight of the weight 161 is applied to the pressure block 140.
  • the edge of the film 130 is pressed toward the sample holder 100 so that the film 130 is in close contact with the entire upper surface of the sample holder (100).
  • the deposition apparatus since the temperature can be precisely controlled by bringing the sample 10 into close contact with the sample holder 100, the deposition quality can be improved. .
  • the deposition apparatus since the film 130 is pressurized only by the weight of the weight 161 without a separate driving device, the structure is simple and the film 130 may be deformed or damaged. There is little advantage.
  • the interior space of the vacuum chamber 200 is formed by the contact between the weight 161 and the pressure block 140 to form the deposition space 200a and the non-deposition space 200b. Since it can be partitioned into), it is advantageous to prevent the deposition material from being deposited on unnecessary portions and to extend the cleaning period.
  • the inner shield 160 may be discharged to the outside of the vacuum chamber 200 and cleaned.
  • FIG. 27 shows a deposition apparatus according to a fifth embodiment of the present invention.
  • the deposition apparatus according to the fifth embodiment of the present invention is compared with the deposition apparatus according to the fourth embodiment of the present invention.
  • the weight relationship of the weight 161 ' is different from each other, the remaining components are substantially the same.
  • the vacuum chamber 200 of the deposition apparatus is the entrance 210 through which the inner shield 160 ', the weight 161' and the sample 10 can enter and exit. Is provided.
  • the entrance 210 is substantially provided in the vacuum chamber according to the fourth embodiment.
  • the inner shield 160 'and the weight 161' according to the fifth embodiment of the present invention are compared with the inner shield 160 and the weight 161 according to the fourth embodiment of the present invention. ') Is not fastened to the inner shield 160' but is separated from each other.
  • the weight 161 ' is raised or the inner shield 160' is lowered, the upper surface of the weight 161 'is formed on the inner shield 160'.
  • the contact area is positioned so as to contact the lower surface of the edge.
  • the weight 161 ′ may be supported by a predetermined support (not shown) in the vacuum chamber 200, and may be discharged out of the vacuum chamber 200.
  • the weight 161 ′ may move up and down inside the vacuum chamber 200.
  • the inner shield 160 may also be discharged out of the vacuum chamber 200.
  • the film 13 to which the sample 10 is attached is introduced into the vacuum chamber 200 and is spaced a predetermined distance apart from the upper portion of the sample holder 100.
  • the inner shield 160 'and the weight 161' are also introduced into the vacuum chamber 200 to be supported at a predetermined position.
  • the film 130 is lowered or the sample holder 100 is raised, so that the film 130 is placed on the sample holder 100.
  • the weight block 161 ′ is lowered or the sample holder 100 is raised so that the weight block 161 ′ supports the film 130. They touch each other.
  • the weight 161 ′ is released from the inside of the vacuum chamber 200, and presses the pressure block 140 downward by its own weight, and the film 130 is the sample holder 100. It is in close contact with the entire upper surface.
  • the sample holder 100 is raised or the inner shield 160 ′ is lowered so that the bottom surface of the inner shield 160 ′ and the top surface of the weight 161 ′ fit together.
  • the inner space of the vacuum chamber 200 is the deposition space 200a and the sample, which is an upper space in which the cathode 170 is positioned based on the inner shield 160 'and the film 130.
  • the cradle 100 is partitioned into a non-deposition space 200b which is a lower space in which the cradle 100 is located.
  • the lower surface of the inner shield 160 'and the upper surface of the weight 161' may be minutely spaced apart from each other.
  • the deposition material P is deposited only on the inner shield 160 ′ and the film 130 and does not flow into the non-deposition space 200b.
  • the deposition process is completed, and the film 130 is discharged to the outside of the vacuum chamber 200 to obtain a sample 10 having a coating layer formed thereon.
  • the inner shield 160 'and the weight 161' are also discharged to the outside of the vacuum chamber 200, and the temperature rising in the deposition process is lowered to prevent shape deformation due to heat.
  • the inner shield 160 'and the weight 161' may be discharged to the outside of the vacuum chamber 200 after each deposition process, but the discharge to the outside of the vacuum chamber 200 with a predetermined period. Can be. This is to increase the yield by simplifying the process.
  • the deposition apparatus since the inner shield 161 ′ and the weight 161 ′ can be discharged to the outside of the vacuum chamber 200, cleaning can be easily performed and effective. There is an advantage that cooling can be achieved.
  • FIG 32 shows a deposition apparatus according to a sixth embodiment of the present invention, in which the deposition apparatus according to the sixth embodiment of the present invention is compared to the deposition apparatus according to the fifth embodiment of the present invention, and includes an inner shield 160 ′′. ) Is fixed inside the vacuum chamber 200 and the remaining components are substantially the same.
  • the inner shield 160 ′′ includes an inner shield fluid flow line 160 a ′′ through which a temperature control fluid can flow.
  • the deposition apparatus according to the sixth embodiment of the present invention has an advantage that the inner shield 160 ′′ can be cooled inside the vacuum chamber 200 even without discharging the inner shield 160 ′′ to the outside of the vacuum chamber 200.
  • the apparatus for discharging the inner shield 160 ′′ does not need to be provided inside the vacuum chamber 200.
  • the structure of the deposition apparatus can be simplified and the manufacturing cost can be reduced.
  • the temperature control fluid flowing in the inner shield fluid flow line 160 "a may be a cooling fluid or a heating fluid.
  • the temperature control fluid may be a cooling fluid for preventing a temperature rise of the inner shield 160 ′′ or a heating fluid for heating to a predetermined deposition temperature in an initial deposition step.
  • Sample holders and deposition apparatus in accordance with embodiments of the present invention can be used to deposit a coating layer on a sample, such as an electrical and electronic device, and is particularly advantageous for performing electromagnetic shielding coating on a sample.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un support d'échantillon pour un appareil de dépôt, et un appareil de dépôt comportant ledit support d'échantillon, et plus particulièrement, un support d'échantillon pour un appareil de dépôt qui régule de manière efficace la température d'un échantillon pour le dépôt et est en mesure d'effectuer un dépôt de grande qualité, ainsi qu'un support d'échantillon associé.
PCT/KR2016/008782 2015-08-19 2016-08-10 Support d'échantillon pour appareil de dépôt, et appareil de dépôt comportant ledit support d'échantillon WO2017030315A1 (fr)

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
KR10-2015-0116631 2015-08-19
KR20150116631 2015-08-19
KR10-2015-0116632 2015-08-19
KR1020150116632A KR101728401B1 (ko) 2015-08-19 2015-08-19 공정 온도 조절이 가능한 증착 방법
KR1020150188066A KR101853063B1 (ko) 2015-08-19 2015-12-29 복수 개의 샘플 거치대를 갖는 샘플 거치 장치 및 그 샘플 거치 장치를 갖는 증착 장치
KR10-2015-0188064 2015-12-29
KR10-2015-0188066 2015-12-29
KR1020150188064A KR101822128B1 (ko) 2015-08-19 2015-12-29 증착 장치용 샘플 거치대 및 그 샘플 거치대를 갖는 증착 장치
KR1020160013911A KR101778592B1 (ko) 2016-02-04 2016-02-04 무게추를 갖는 이너 쉴드가 구비된 증착 챔버 장치
KR10-2016-0013911 2016-02-04
KR1020160013912A KR101790617B1 (ko) 2016-02-04 2016-02-04 열전도 가스를 통해 샘플의 온도 조절이 가능한 증착 장치용 샘플 거치대 및 그 샘플 거치대를 갖는 증착 장치
KR10-2016-0013912 2016-02-04
KR10-2016-0060862 2016-05-18
KR1020160060865A KR101822125B1 (ko) 2016-05-18 2016-05-18 증착 챔버 외부로 배출될 수 있는 무게추를 갖는 증착 챔버 장치
KR1020160060862A KR101800197B1 (ko) 2016-05-18 2016-05-18 증착 챔버 외부로 배출될 수 있는 이너 쉴드와 무게추를 갖는 증착 챔버 장치
KR10-2016-0060865 2016-05-18

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WO2017030315A1 true WO2017030315A1 (fr) 2017-02-23

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Application Number Title Priority Date Filing Date
PCT/KR2016/008782 WO2017030315A1 (fr) 2015-08-19 2016-08-10 Support d'échantillon pour appareil de dépôt, et appareil de dépôt comportant ledit support d'échantillon

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WO (1) WO2017030315A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190018974A (ko) * 2017-08-16 2019-02-26 주식회사 포스코 표면 발색 장치
US20220386450A1 (en) * 2021-05-31 2022-12-01 Inari Technology Sdn Bhd System, process and a jig for forming conformal EMI shield on package-level electronics or a portion thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250472A (ja) * 1995-03-10 1996-09-27 Hitachi Ltd 基板ホルダ
JPH11335811A (ja) * 1998-05-27 1999-12-07 Sony Corp 成膜装置
JP4578701B2 (ja) * 2001-02-26 2010-11-10 キヤノンアネルバ株式会社 基板処理方法
JP5651693B2 (ja) * 2010-06-23 2015-01-14 株式会社アルバック 基板ホルダ及び成膜装置
KR20150021251A (ko) * 2013-08-20 2015-03-02 (주)에스엔텍 플라즈마 화학기상 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250472A (ja) * 1995-03-10 1996-09-27 Hitachi Ltd 基板ホルダ
JPH11335811A (ja) * 1998-05-27 1999-12-07 Sony Corp 成膜装置
JP4578701B2 (ja) * 2001-02-26 2010-11-10 キヤノンアネルバ株式会社 基板処理方法
JP5651693B2 (ja) * 2010-06-23 2015-01-14 株式会社アルバック 基板ホルダ及び成膜装置
KR20150021251A (ko) * 2013-08-20 2015-03-02 (주)에스엔텍 플라즈마 화학기상 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190018974A (ko) * 2017-08-16 2019-02-26 주식회사 포스코 표면 발색 장치
KR101998957B1 (ko) 2017-08-16 2019-07-10 주식회사 포스코 표면 발색 장치
US20220386450A1 (en) * 2021-05-31 2022-12-01 Inari Technology Sdn Bhd System, process and a jig for forming conformal EMI shield on package-level electronics or a portion thereof

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