WO2013115590A1 - Appareil de traitement de substrats et procédé de traitement de substrats - Google Patents

Appareil de traitement de substrats et procédé de traitement de substrats Download PDF

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Publication number
WO2013115590A1
WO2013115590A1 PCT/KR2013/000823 KR2013000823W WO2013115590A1 WO 2013115590 A1 WO2013115590 A1 WO 2013115590A1 KR 2013000823 W KR2013000823 W KR 2013000823W WO 2013115590 A1 WO2013115590 A1 WO 2013115590A1
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WO
WIPO (PCT)
Prior art keywords
gas
gas injection
space
modules
module
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PCT/KR2013/000823
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English (en)
Korean (ko)
Inventor
황철주
김영록
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주성엔지니어링(주)
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Publication of WO2013115590A1 publication Critical patent/WO2013115590A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus and a substrate processing method for increasing the deposition uniformity of a thin film deposited on a substrate.
  • a semiconductor device In order to manufacture a solar cell, a semiconductor device, a flat panel display, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a surface of a substrate.
  • Semiconductor manufacturing processes such as a thin film deposition process, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for forming a pattern by removing the thin film of the selectively exposed portion are performed.
  • Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed in an optimal environment for the process, and in recent years, many substrate processing apparatuses that perform deposition or etching processes using plasma are widely used.
  • the substrate processing apparatus using plasma includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, and a plasma etching apparatus for etching and patterning a thin film.
  • PECVD plasma enhanced chemical vapor deposition
  • plasma etching apparatus for etching and patterning a thin film.
  • FIG. 1 is a diagram schematically illustrating a general substrate processing apparatus.
  • a general substrate processing apparatus includes a chamber 10, a plasma electrode 20, a susceptor 30, and a gas ejection means 40.
  • Chamber 10 provides a reaction space for a substrate processing process. At this time, one bottom surface of the chamber 10 communicates with an exhaust port 12 for exhausting the reaction space.
  • the plasma electrode 20 is installed above the chamber 10 to seal the reaction space.
  • One side of the plasma electrode 20 is electrically connected to an RF (Radio Frequency) power source 24 through the matching member 22.
  • the RF power source 24 generates RF power and supplies the RF power to the plasma electrode 20.
  • the central portion of the plasma electrode 20 is in communication with the gas supply pipe 26 for supplying the source gas for the substrate processing process.
  • the matching member 22 is connected between the plasma electrode 20 and the RF power supply 24 to match the load impedance and the source impedance of the RF power supplied from the RF power supply 24 to the plasma electrode 20.
  • the susceptor 30 supports a plurality of substrates W installed in the chamber 10 and loaded from the outside.
  • the susceptor 30 is an opposing electrode facing the plasma electrode 20, and is electrically grounded through the lifting shaft 32 for elevating the susceptor 30.
  • the lifting shaft 32 is lifted up and down by a lifting device (not shown). At this time, the lifting shaft 32 is wrapped by the bellows 34 sealing the lifting shaft 32 and the bottom surface of the chamber 10.
  • the gas injection means 40 is installed below the plasma electrode 20 so as to face the susceptor 30. At this time, a gas diffusion space 42 through which the source gas supplied from the gas supply pipe 26 penetrating the plasma electrode 20 is formed between the gas injection means 40 and the plasma electrode 20. The gas injection means 40 uniformly injects the source gas to the entire portion of the reaction space through the plurality of gas injection holes 44 communicated with the gas diffusion space 42.
  • Such a general substrate processing apparatus loads the substrate W into the susceptor 30, and then sprays a predetermined source gas into the reaction space of the chamber 10 and supplies RF power to the plasma electrode 20.
  • a predetermined source gas By forming a plasma in the reaction space between the susceptor 30 and the gas injection means 40, the source material of the source gas is deposited on the substrate W using the plasma.
  • the general substrate processing apparatus has the following problems because the space where the source gas is injected and the space where the plasma is formed are the same.
  • the substrate W since plasma is formed on the substrate W, the substrate W may be damaged by the plasma.
  • the uniformity of the thin film material deposited on the substrate W is uneven due to the nonuniformity of the plasma density formed in the entire upper region of the susceptor, and there is a difficulty in controlling the film quality of the thin film material.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of preventing damage to a substrate by plasma.
  • Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method for spatially separating a source gas and a reactive gas injected onto a substrate to increase deposition uniformity of a thin film deposited on the substrate. .
  • the substrate processing apparatus for achieving the above technical problem is a process chamber; A substrate support unit installed in the process chamber to support at least one substrate; A chamber lid covering an upper portion of the process chamber to face the substrate support; And a gas injector having a plurality of gas injecting modules installed in the chamber lid in a radial manner so as to be opposed to the substrate support locally and locally inject at least one kind of gas onto the substrate support.
  • At least one gas injection module of the gas injection module is characterized in that for activating and injecting the at least one type of gas.
  • At least one gas injection module of the plurality of gas injection module is a gas injection space for injecting the gas; And a plasma electrode installed in the gas injection space to face the substrate support part locally, to form a plasma in the gas injection space according to a plasma power source, and to activate and spray a gas supplied to the gas injection space. It is characterized by.
  • Each of the plurality of gas injection modules injects a first gas and a second gas into each of a plurality of divided spaces locally defined between the chamber lid and the substrate support, and at least one gas injection module of the plurality of gas injection modules. Is characterized in that for activating and injecting at least one type of gas of the first and second gas.
  • Each of the plurality of gas injection modules injects at least one kind of gas of the first and second gases into each of the plurality of divided spaces defined locally between the chamber lid and the substrate support, and among the plurality of gas injection modules At least one gas injection module for injecting the second gas is characterized in that for activating and injecting the second gas.
  • the substrate processing apparatus for achieving the above technical problem is a process chamber; A substrate support unit installed in the process chamber to support at least one substrate; A chamber lid covering an upper portion of the process chamber to face the substrate support; And a gas injection unit having a plurality of gas injection modules radially installed on the chamber leads so as to face each of the plurality of divided spaces defined spatially separated between the chamber leads and the substrate support.
  • Part of the gas injection module of the gas injection module is characterized in that the at least one type of gas selected from the first gas and the second gas is spatially separated and injected into the respective divided spaces.
  • Some of the gas injection modules of the plurality of gas injection modules may activate the second gas and inject into the divided spaces.
  • the remaining gas injection module of the plurality of gas injection modules may inject a gas selected from the first and second gases into a partition space in an inactivated state or in an activated state.
  • the substrate processing apparatus for achieving the above technical problem is a process chamber; A substrate support unit installed in the process chamber to support at least one substrate; A chamber lid covering an upper portion of the process chamber to face the substrate support; And a gas injector having a plurality of gas injector modules radially installed in the chamber lid so as to be opposed to the substrate support, wherein some of the plurality of gas injector modules inject a first gas. It has a 1 gas injection space and the 2nd gas injection space which injects a 2nd gas, The plasma is formed in the said 2nd gas injection space, It is characterized by the above-mentioned.
  • the remaining gas injection module of the plurality of gas injection modules may have at least one gas injection space of the first and second gas injection spaces.
  • the remaining gas injection modules of the plurality of gas injection modules are disposed in the gas injection space to face the substrate support portion locally, and include a plasma electrode for forming a plasma inside the gas injection space according to a plasma power source. It features.
  • Some of the gas injection modules of the plurality of gas injection modules are installed in the second gas injection space to face each other locally, and form a plasma inside the second gas injection space according to a plasma power source to form the second gas. It characterized in that it comprises a plasma electrode for activating and injecting the second gas supplied to the injection space.
  • Some of the gas injection modules of the plurality of gas injection modules are installed in the first gas injection space to face each other locally, and form a plasma inside the first gas injection space according to a plasma power source to form the first gas.
  • a first plasma electrode activating and injecting the first gas supplied to the injection space;
  • installed in the second gas injection space so as to face the substrate support part locally, and to form a plasma inside the second gas injection space according to a plasma power source to activate the second gas supplied to the second gas injection space. It characterized in that it comprises a second plasma electrode.
  • the remaining gas injection modules of the plurality of gas injection modules are alternately disposed with the gas injection modules to inject the purge gas into an inactive state or an activated state in the partition space.
  • a substrate processing method including: mounting a plurality of substrates at regular intervals on a substrate support installed in a process chamber; Rotating the substrate support on which the plurality of substrates are seated; And activating at least one kind of gas locally on the substrate support through at least one gas injection module of the plurality of gas injection modules disposed radially in a chamber lid covering the top of the process chamber. Characterized in that made.
  • Each of the plurality of gas injection modules spatially separates and injects first and second gases into each of a plurality of divided spaces locally defined between the chamber lid and the substrate support, and at least one of the plurality of gas injection modules.
  • the gas injection module is characterized in that for activating and injecting at least one type of gas of the first and second gas.
  • Each of the plurality of gas injection modules injects at least one kind of gas of the first and second gases into each of the plurality of divided spaces defined locally between the chamber lid and the substrate support, and among the plurality of gas injection modules At least one gas injection module for injecting the second gas is characterized in that for activating and injecting the second gas.
  • a substrate processing method including: seating a plurality of substrates at regular intervals on a substrate support installed in a process chamber; Rotating the substrate support on which the plurality of substrates are seated (B); And a plurality of gas injection modules radially disposed in the chamber lid covering the upper portion of the process chamber, to spatially separate at least one type of gas selected from first and second gases and to locally spray the gas onto the substrate support.
  • the gas injection module of some of the plurality of gas injection module is characterized in that for activating the injection of the selected gas.
  • Part of the plurality of gas injection module gas injection module is characterized in that for activating and injecting the second gas.
  • the remaining gas injection module of the plurality of gas injection modules may inject a gas selected from the first and second gases into an inactive state or an activated state.
  • a substrate processing method including: seating a plurality of substrates at regular intervals on a substrate support installed in a process chamber; Rotating the substrate support on which the plurality of substrates are seated (B); And (C) locally injecting gas onto the substrate support through a plurality of gas injection modules radially installed in the chamber lid, wherein in step (C), among the plurality of gas injection modules Some gas injection modules have a first gas injection space for injecting a first gas and a second gas injection space for injecting a second gas, and form a plasma in the second gas injection space.
  • the remaining gas injection module of the plurality of gas injection modules may have at least one gas injection space of the first and second gas injection spaces.
  • the remaining gas injection modules of the plurality of gas injection modules form a plasma inside the gas injection space according to a plasma power applied to a plasma electrode installed in the gas injection space so as to face the substrate support part locally. do.
  • a substrate processing method including: seating a plurality of substrates at regular intervals on a substrate support installed in a process chamber; Rotating the substrate support on which the plurality of substrates are seated (B); And (C) locally injecting gas onto the substrate support through a plurality of gas injection modules radially installed in the chamber lid, wherein step (C) is part of the plurality of gas injection modules. Locally spraying at least one kind of gas of the first and second gases onto the substrate support through a gas injection module of the substrate; And locally injecting purge gas onto the substrate support through the remaining gas injection module of the plurality of gas injection modules.
  • Some of the gas injection modules of the plurality of gas injection modules have a first gas injection space for injecting the first gas and a second gas injection space for injecting the second gas, and plasma is injected into the second gas injection space. It is characterized by forming.
  • the remaining gas injection modules of the plurality of gas injection modules are alternately disposed with the gas injection modules, and the purge gas supplied to the purge gas injection space is injected as it is, or a plasma is formed in the purge gas injection space to form the purge. It is characterized by activating the gas and spraying.
  • the substrate processing apparatus and substrate processing method which concern on this invention have the following effects.
  • plasma damage may be prevented by forming a plasma in each of the plurality of gas injection modules disposed spatially separated on the substrate support to inject a gas activated by the plasma onto the substrate.
  • the deposition uniformity of the thin films deposited on each substrate may be increased, and the film quality of the thin films may be easily controlled. It is possible to improve the particles by minimizing the cumulative thickness deposited in the process chamber.
  • FIG. 1 is a diagram schematically illustrating a general substrate processing apparatus.
  • FIG. 2 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention.
  • FIG. 3 is a cross-sectional view for describing each of the plurality of gas injection modules illustrated in FIG. 2.
  • FIG. 4 is a view for explaining a substrate processing method using the substrate processing apparatus according to the first embodiment of the present invention described above.
  • FIG. 5 is a waveform diagram illustrating an operation procedure of the first to fourth gas injection modules illustrated in FIG. 4.
  • 6 to 8 are waveform diagrams for describing modifications of the substrate processing method through the first to fourth gas injection modules illustrated in FIG. 2.
  • FIG. 9 is a cross-sectional view illustrating a modified embodiment of each of the plurality of gas injection modules illustrated in FIG. 2.
  • FIG. 10 is a cross-sectional view for describing a plurality of gas injection modules in the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 11 is a cross-sectional view for describing a plurality of gas injection modules in the substrate processing apparatus according to the third embodiment of the present invention.
  • FIG. 12 is a table illustrating various embodiments of an operation of each gas injection module according to a control mode of a control module in the substrate processing apparatus and the substrate processing method using the same according to the first to third embodiments of the present disclosure. .
  • FIG. 13 is a schematic view of a substrate processing apparatus according to a fourth embodiment of the present invention.
  • FIG. 14 is a cross-sectional view for describing the second and fourth gas injection modules illustrated in FIG. 13.
  • 15 is a view for explaining a substrate processing method using the substrate processing apparatus according to the fourth embodiment of the present invention described above.
  • FIG. 16 is a schematic view of a substrate processing apparatus according to a fifth embodiment of the present invention.
  • FIG. 17 is a plan view illustrating an arrangement structure of each gas injection module illustrated in FIG. 16.
  • FIG. 2 is a diagram schematically illustrating a substrate processing apparatus according to a first embodiment of the present invention
  • FIG. 3 is a cross-sectional view for describing each of the plurality of gas injection modules illustrated in FIG. 2.
  • the substrate processing apparatus 100 may include a process chamber 110, a chamber lid 115, a substrate support 120, and a gas injection unit. And 130.
  • the process chamber 110 provides a reaction space for a substrate processing process, for example a thin film deposition process.
  • the bottom surface and / or side surface of the process chamber 110 may be in communication with an exhaust pipe (not shown) for exhausting the gas of the reaction space.
  • the chamber lid 115 is installed on the upper portion of the process chamber 110 to cover the upper portion of the process chamber 110.
  • the chamber lid 115 supports the gas injector 130, and the plurality of module installation units 115a, 115b, and 115c are inserted into and installed so that the gas injector 130 has a predetermined interval, for example, a radial shape. , 115d).
  • the plurality of module installation units 115a, 115b, 115c, and 115d may be spaced in units of 90 degrees so as to be symmetrical in a diagonal direction with respect to the center point of the chamber lid 115.
  • the chamber lid 115 is illustrated as having four module mounting portions 115a, 115b, 115c, and 115d.
  • the chamber lid 115 is not limited thereto, and the chamber lid 115 may be symmetrical to each other based on a center point.
  • N may be provided with a module installation part of a natural number).
  • each of the plurality of module mounting portion is provided to be mutually symmetrical in the diagonal direction with respect to the center point of the chamber lead 115.
  • the chamber lid 115 includes the first to fourth module mounting portions 115a, 115b, 115c, and 115d.
  • the substrate support part 120 is rotatably installed in the process chamber 110 and electrically floated.
  • the substrate support part 120 is supported by a rotating shaft (not shown) penetrating the center bottom surface of the process chamber 110.
  • the rotation shaft rotates according to the driving of the shaft driving member (not shown) to rotate the substrate support part 120 in a predetermined direction.
  • the rotating shaft exposed to the outside of the lower surface of the process chamber 110 is sealed by a bellows (not shown) installed on the lower surface of the process chamber 110.
  • the substrate support part 120 supports at least one substrate W loaded from an external substrate loading device (not shown).
  • the substrate support part 120 may have a disc shape.
  • the substrate W may be a semiconductor substrate or a wafer.
  • the substrate support part 120 may be disposed in a circle shape such that the plurality of substrates W have a predetermined interval.
  • the gas injector 130 may include the first to fourth module mounting portions 115a of the chamber lid 115 so as to overlap each of the plurality of divided spaces DS1, DS2, DS3, and DS4, which are locally opposed to the substrate support 120. , 115b, 115c, and 115d) are respectively inserted and installed.
  • the gas injector 130 injects at least one type of gas into each of the divided spaces DS1, DS2, DS3, and DS4, and selectively selects a gas injected into each of the divided spaces DS1, DS2, DS3, and DS4. Activate it.
  • the gas injector 130 spatially separates different first and second gases from each other and injects them into each of the divided spaces DS1, DS2, DS3, and DS4, but at least one kind of gas among the first and second gases. Is activated and sprayed into each of the divided spaces DS1, DS2, DS3, DS4.
  • the division space DS is defined as a part of the opposing regions that are locally opposed among the entire opposing regions (or the entire reaction space) between the opposing chamber lids 115 and the substrate support 120.
  • the plurality of divided spaces DS1, DS2, DS3, and DS4 are spaced at regular intervals so as to be spatially separated from each other.
  • the first gas may be a source gas including a thin film material to be deposited on the substrate (W).
  • the source gas may include silicon (Si), titanium group elements (Ti, Zr, Hf, etc.), aluminum (Al), and the like.
  • the source gas containing silicon (Si) may be silane (Silane; SiH4), disilane (Disilane; Si2H6), trisilane (Si3H8), TEOS (Tetraethylorthosilicate), DCS (Dichlorosilane), HCD ( Hexachlorosilane), TriDMA dimethylaminosilane (TriDMAS), and trisylylamine (TSA).
  • the second gas may be made of a reactant gas that reacts with the above-described source gas so that the thin film material contained in the source gas is deposited on the substrate (W).
  • the reaction gas may be formed of at least one of nitrogen (N 2), oxygen (O 2), nitrogen dioxide (N 2 O), and ozone (O 3).
  • the gas injection unit 130 includes first to fourth gas injection modules 130a, 130b, 130c, and 130d.
  • Each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d is inserted into and installed in each of the first to fourth module installation units 115a, 115b, 115c, and 115d to be spatially separated.
  • the first and second gases supplied from the gas supply means (not shown) to each of the spaces DS1, DS2, DS3, DS4 are spatially separated and sprayed.
  • at least one gas injection module of the first to fourth gas injection modules 130a, 130b, 130c, and 130d activates a second gas and injects each of the divided spaces DS1, DS2, DS3, and DS4. .
  • Each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d may be inserted into each of the first to fourth module mounting portions 115a, 115b, 115c, and 115d of the chamber lid 115 to provide a substrate support ( 120 is symmetrical with respect to the X-axis and the Y-axis direction or the diagonal direction with respect to the center point.
  • the first gas injection module 130a is inserted into and installed in the first module installation unit 115a that overlaps the first divided space DS1 locally defined on the substrate support unit 120 to the first divided space DS1.
  • the first and second gases are spatially separated and injected, but the second gas is activated and injected into the first divided space DS1.
  • the second gas may be activated by a plasma, microwave, heat source, laser, or the like.
  • the second gas is assumed to be activated by plasma.
  • the first gas injection module 130a includes a support frame 131, a cover plate 132, and first and second gas injection plates 133 and 134.
  • the support frame 131 is formed to include the first and second gas injection spaces S1 and S2 to support the cover plate 132 and the gas injection plates 133 and 134.
  • the support frame 131 is made of an insulating material (eg, a ceramic material) to electrically insulate the cover plate 132 from the gas injection plates 133 and 134.
  • the support frame 131 is inserted into the first module mounting unit 115a or installed on the upper surface of the chamber lid 115 so as to overlap the first module mounting unit 115a. Accordingly, the lower surface of the support frame 131 may be positioned the same as the lower surface of the chamber lid 115, or may protrude toward the substrate support 120 from the lower surface of the chamber lid 115.
  • the support frame 131 is bent vertically from the upper surface 131a supporting the cover plate 132 and the upper surface 131a to provide the first and second gas injection spaces S1 and S2, respectively. ), From the lower surface 131c which is bent from the lower surface of the side wall 131b to have the first and second openings to support the first and second gas injection plates 133 and 134, respectively, and from the lower surface 131c. It is configured to include a partition member 131d protruding to a predetermined height and coupled to the cover plate 132 to spatially separate the first gas injection space S1 and the second gas injection space S2.
  • Each of the first and second gas injection spaces S1 and S2 is defined by the side wall 131b of the support frame 131, but is spatially separated by the partition member 131d.
  • the first gas injection space S1 and the second gas injection space S2 may be formed to have the same or different areas. In this case, an area of the first gas injection space S1 may be larger or smaller than the second gas injection space S2.
  • the cover plate 132 is formed in a flat plate shape to cover the upper surface of the support frame 131 described above. At this time, the cover plate 132 is coupled to each of the upper surface 131a of the support frame 131 and the upper surface of the partition member 131d by fastening members such as screws or bolts.
  • the cover plate 132 may be electrically connected to the chamber lid 115 to be electrically grounded, or may be electrically grounded through a separate ground strap (not shown), so that each of the first and second gas injection plates 133 and 134 may be formed. It serves as a ground electrode opposite.
  • the cover plate 132 may include a first gas supply hole 131e formed to communicate with the first gas injection space S1, and a second gas supply hole 131f formed to communicate with the second gas injection space S2. It is configured to include more.
  • the first gas injection space S1 is connected to a gas supply means (not shown) through a first gas supply pipe 142 installed in the cover plate 132 so as to communicate with the first gas supply hole 131e. Accordingly, the first gas G1 is diffused in the first gas injection space S1 and supplied to the first gas injection plate 133.
  • the second gas injection space S2 is connected to a gas supply means (not shown) through a second gas supply pipe 144 provided in the cover plate 132 so as to communicate with the second gas supply hole 131f. Accordingly, the second gas G2 is diffused in the second gas injection space S2 and supplied to the second gas injection plate 134.
  • the first gas injection plate 133 injects the first gas G1 supplied from the first gas injection space S1 downward into one region of the first division space DS1.
  • the first gas injection plate 133 is supported by the lower surface 131c of the support frame 131 so as to overlap the first opening provided in the lower surface 131c of the support frame 131. Accordingly, the upper surface of the first gas injection plate 133 is opposed to the lower surface of the cover plate 132 with the first gas injection space S1 therebetween. The lower surface of the first gas injection plate 133 is locally opposed to the upper surface of the substrate support part 120 corresponding to the one side area of the first division space DS1.
  • the first gas injection plate 133 includes a plurality of first gas injection holes 133h formed at predetermined intervals so as to communicate with the first gas injection space S1 in common.
  • the first gas injection plate 133 is configured to pass the first gas G1 supplied from the first gas injection space S1 to each of the first divided spaces DS1 through each of the plurality of first gas injection holes 133h. Spray downward in one region.
  • the second gas injection plate 134 is formed to have a second area equal to or different from that of the first gas injection plate 133, and is inserted into the second gas injection space S2 of the support frame 131.
  • the second area of the second gas injection plate 134 may be larger or smaller than the first area of the first gas injection plate 133 described above.
  • the second gas injection plate 134 activates the second gas G2 supplied to the second gas injection space S2 and injects it downward into the other region of the first division space DS1.
  • the second gas injection plate 134 is supported by the lower surface 131c of the support frame 131 so as to overlap the second opening provided in the lower surface 131c of the support frame 131. Accordingly, the upper surface of the second gas injection plate 134 faces the lower surface of the cover plate 132 with the second gas injection space S2 interposed therebetween. The lower surface of the second gas injection plate 134 is locally opposed to the upper surface of the substrate support part 120 corresponding to the other region of the first division space DS1.
  • the second gas injection plate 134 includes a plurality of second gas injection holes 134h formed at predetermined intervals so as to communicate with the second gas injection space S2 in common.
  • the second gas injection plate 134 is electrically connected to the power supply means 150 through the feed cable 152.
  • the second gas injection plate 134 serves as a plasma electrode for forming plasma in the second gas injection space S2 according to the plasma power supplied from the power supply means 150 through the feed cable 152. .
  • the power supply means 150 generates a plasma power having a predetermined frequency, and supplies the plasma power to the second gas injection plate 134 through a feed cable 152 to supply the second gas injection space S2.
  • Plasma is formed in the. Accordingly, the second gas G2 is converted into plasma and activated by the plasma formed in the second gas injection space S2.
  • the second gas PG2 activated by the plasma is spatially separated from the first gas G1 injected into the first gas injection space S1 through the plurality of second gas injection holes 134h.
  • the thin film material is deposited on the substrate W by reacting with the first gas G1 sprayed on the substrate W.
  • the plasma power supply may be a high frequency power, for example, high frequency (HF) power having a frequency in the range of 3 MHz to 30 MHz, or a VHF (Very High Frequency) power having a frequency in the range of 30 MHz to 300 MHz. .
  • HF high frequency
  • VHF Very High Frequency
  • an impedance matching circuit 154 may be connected to the feed cable 152.
  • the impedance matching circuit 154 matches the load impedance and the source impedance of the plasma power supplied from the power supply means 150 to the second gas injection plate 134.
  • the impedance matching circuit 154 may be formed of at least two impedance elements (not shown) composed of at least one of a variable capacitor and a variable inductor.
  • the first gas injection module 130a spatially separates the first and second gases G1 and G2 different from each other into the first division space DS1 and downwardly injects the second gas injection plate. According to the plasma power supplied to the 134, plasma is formed in the second gas injection space S2 to activate the second gas G2 and downwardly spray the second gas G2.
  • the second gas injection module 130b is inserted into the second module installation unit 115b overlapping the second divided space DS2 locally defined on the substrate support unit 120 to be different from each other.
  • the first and second gases are spatially separated and injected into the second divided space DS2, but the second gas is activated and injected into the second divided space DS2. Since the second gas injection module 130b is configured in the same manner as the first gas injection module 130a illustrated in FIG. 3, the detailed description thereof will be replaced with the above description.
  • the second gas injection module 130b injects the first gas G1 downward in one region of the second division space DS2 through the first gas injection space S1, and the second gas injection space ( Plasma is formed in S2 and the second gas G2 is activated to downwardly spray the other region of the second divided space DS2 to be spatially separated from the first gas G1.
  • the third gas injection module 130c is inserted into and installed in the third module installation unit 115c overlapping the third divided space DS3 locally defined on the substrate support unit 120 so as to be different from each other. Is spatially separated and injected into the third divided space DS3, but the second gas is activated to spray into the third divided space DS3. Since the third gas injection module 130c is configured in the same manner as the first gas injection module 130a shown in FIG. 3, the detailed description thereof will be replaced with the above description.
  • the third gas injection module 130c injects the first gas G1 downward in one region of the third division space DS3 through the first gas injection space S1, and the second gas injection space ( Plasma is formed in S2 and the second gas G2 is activated to downwardly spray the other region of the third divided space DS3 to be spatially separated from the first gas G1.
  • the fourth gas injection module 130d is inserted into and installed in the fourth module installation part 115d overlapping the fourth divided space DS4 locally defined on the substrate support part 120 so as to be different from each other. Is spatially separated and sprayed into the fourth divided space DS4, but the second gas is activated to spray into the fourth divided space DS4. Since the fourth gas injection module 130d is configured in the same manner as the first gas injection module 130a shown in FIG. 3, the detailed description thereof will be replaced with the above description.
  • the fourth gas injection module 130d injects the first gas G1 downward in one region of the fourth division space DS4 through the first gas injection space S1, and the second gas injection space ( Plasma is formed in S2 and the second gas G2 is activated to spray downwardly to the other region of the fourth divided space DS4 so as to be spatially separated from the first gas G1.
  • Substrate processing apparatus 100 are each of the first to fourth gas injection module (130a, 130b, 130c, 130d) disposed spatially separated on the substrate support 120 Plasma is formed in the second gas injection space S2 of the second gas PG2, which is activated by the plasma, to be sprayed onto the substrate W to prevent damage to the substrate W by the plasma.
  • the substrate processing apparatus 100 supplies the first and second gases G1 and G2 through the first to fourth gas injection modules 130a, 130b, 130c, and 130d, respectively.
  • the deposition uniformity of the thin films deposited on the respective substrates W may be increased, and the film quality of the thin films may be easily controlled and may be deposited in the process chamber 110. Particles can be improved by minimizing the cumulative thickness.
  • FIG. 4 is a view illustrating a substrate processing method using the substrate processing apparatus according to the first embodiment of the present invention described above, and FIG. 5 illustrates an operation procedure of the first to fourth gas injection modules illustrated in FIG. 4. It is a waveform diagram for that.
  • the plurality of substrates W are loaded on the substrate support part 120 at regular intervals and seated thereon.
  • the plurality of substrates W are loaded and rotated in the predetermined direction.
  • the first gas G1 and the activated second gas PG2 are spatially separated through each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d to separate each of the divided spaces DS1, DS2, DS3, DS4) spray downward.
  • the first gas G1 is supplied to the first gas injection space S1 of each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d to divide each of the first gas G1. Downward injection is to one side of each of the spaces DS1, DS2, DS3, DS4.
  • the second gas G2 is supplied to the second gas injection space S2 of each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d, and the first to fourth gas injection modules (
  • the second gas G2 is activated through the plasma by supplying plasma power to each of the second gas injection plates 134 and forming plasma in each of the second gas injection spaces S2 130a, 130b, 130c, and 130d. Then, the activated second gas PG2 is injected downward into the other region of each of the divided spaces DS1, DS2, DS3, and DS4.
  • each of the plurality of substrates W mounted on the substrate support part 120 sequentially passes through each of the divided spaces DS1, DS2, DS3, and DS4 in accordance with the rotation of the substrate support part 120.
  • a predetermined thin film material is deposited on each of the plurality of substrates W by mutual reaction of the first gas G1 and the activated second gas PG2.
  • each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d simultaneously operates the first gas G1 and the activated second gas PG2 as described above.
  • the present invention is not limited thereto, and the spraying order of each of the first gas G1 and the activated second gas PG2 may be changed in various ways according to a process sequence under the control of a control module (not shown). have.
  • 6 to 8 are waveform diagrams for describing modifications of the substrate processing method through the first to fourth gas injection modules illustrated in FIG. 2.
  • the substrate processing method according to the first modified example may include the first gas G1 and the activated second through the first to fourth gas injection modules 130a, 130b, 130c, and 130d, respectively. Gases PG2 are alternately injected into the respective divided spaces DS1, DS2, DS3, DS4.
  • a substrate processing method according to the first modified example will be described in detail.
  • the first gas G1 is supplied to each of the first gas injection spaces S1 of each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d, so that each of the divided spaces DS1, DS2, DS3, DS4)
  • the first gas G1 is injected downward into each one region.
  • the substrate processing method according to the first modified example is seated on the substrate support 120 which is rotated by alternately repeating the above-described spraying process of the first gas G1 and the spraying of the activated second gas PG2. A thin film is deposited on each of the substrates W.
  • the substrate processing method according to the second modified example continuously maintains the aforementioned first gas G1 through each of the first to fourth gas ejection modules 130a, 130b, 130c, and 130d. Inject into one region of each of the divided spaces DS1, DS2, DS3, DS4, and spray the activated second gas PG2 into the other region of each of the divided spaces DS1, DS2, DS3, DS4 at predetermined intervals. do.
  • a substrate processing method according to the second modified example will be described in detail.
  • the first gas G1 is supplied to each of the first gas injection spaces S1 of each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d, so that each of the divided spaces DS1, DS2, DS3, DS4)
  • the first gas G1 is continuously injected downward into each one region.
  • the second gas G2 is supplied to the second gas injection space, and plasma power is supplied to the second gas injection plates 134 of the first to fourth gas injection modules 130a, 130b, 130c, and 130d, respectively, so that each second gas injection space is provided.
  • Plasma is formed in S2, and the activated second gas PG2 is injected downward at predetermined intervals into the other regions of the respective divided spaces DS1, DS2, DS3, and DS4.
  • the substrate support part rotated by continuously performing the above-described spraying process of the first gas G1 and repeating the spraying process of the activated second gas PG2 every predetermined period.
  • a thin film is deposited on each of the substrates W mounted on the 120.
  • the spraying process of the first gas G1 is continuously performed, and the spraying process of the activated second gas PG2 is repeatedly performed at predetermined intervals.
  • the present invention is not limited thereto, and the injection process of the activated second gas PG2 may be continuously performed, and the injection process of the first gas G1 may be repeatedly performed at predetermined intervals.
  • the substrate processing method according to the third modified example may include the first gas G1 and the activated second through the first to fourth gas injection modules 130a, 130b, 130c, and 130d, respectively.
  • the gas PG2 is sequentially sprayed into each of the divided spaces DS1, DS2, DS3, and DS4, and each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d is sequentially operated.
  • a substrate processing method according to the third modified example will be described in detail.
  • the first gas G1 is supplied to the first gas injection space S1 of the first gas injection module 130a to downwardly inject the first gas G1 into one region of the first division space DS1. do.
  • the process of spraying the first gas G1 through the first gas spray space S1 of the first gas spray module 130a is stopped, and the second gas spray of the first gas spray module 130a is stopped.
  • the second gas G2 is supplied to the space S2, and the plasma power is supplied to the second gas injection plate 134 of the first gas injection module 130a to supply a second gas of the first gas injection module 130a.
  • Plasma is formed in the injection space S2 and the activated second gas PG2 is injected downward into the other region of each of the first division spaces DS1.
  • the first gas G1 is supplied to the first gas injection space S1 of the second gas injection module 130b to downwardly move the first gas G1 to one region of the second division space DS2. Spray.
  • the injection process of the activated second gas PG2 through the second gas injection space S2 of the first gas injection module 130a described above and the first gas of the second gas injection module 130b described above The injection process of the first gas G1 through the injection space S1 is stopped, the second gas G2 is supplied to the second gas injection space S2 of the second gas injection module 130b, and the second gas G2 is supplied.
  • the second gas PG2 activated by supplying plasma power to the second gas injection plate 134 of the gas injection module 130b to form plasma in the second gas injection space S2 of the second gas injection module 130b. Sprays downward into the other region of each of the second divided spaces DS2.
  • the first gas G1 is supplied to the first gas injection space S1 of the third gas injection module 130c to downwardly move the first gas G1 to one region of the third division space DS3. Spray.
  • the injection process of the first gas G1 through the injection space S1 is stopped, the second gas G2 is supplied to the second gas injection space S2 of the third gas injection module 130c, and the third The second gas PG2 activated by supplying plasma power to the second gas injection plate 134 of the gas injection module 130c to form plasma in the second gas injection space S2 of the third gas injection module 130c. Is sprayed downward on the other side of each of the third divided spaces DS3.
  • the first gas G1 is supplied to the first gas injection space S1 of the fourth gas injection module 130d to downwardly move the first gas G1 to one region of the fourth division space DS4. Spray.
  • the injection process of the first gas G1 through the injection space S1 is stopped, the second gas G2 is supplied to the second gas injection space S2 of the fourth gas injection module 130d, and the fourth gas is discharged.
  • the second gas PG2 activated by supplying plasma power to the second gas injection plate 134 of the gas injection module 130d to form a plasma in the second gas injection space S2 of the fourth gas injection module 130d. Is sprayed downward on the other region of each of the fourth divided spaces DS4.
  • the first gas G1 is supplied to the first gas injection space S1 of the first gas injection module 130a to downwardly move the first gas G1 to one region of the first division space DS1. Spray.
  • the divided spaces are sequentially formed by the first gas G1 and the activated second gas PG2 through the respective injection modules 130a, 130b, 130c, and 130d. Spray the thin film onto each substrate W seated on the substrate support 120 which is rotated by sequentially operating the respective injection modules 130a, 130b, 130c, and 130d. Will be deposited.
  • FIG. 9 is a cross-sectional view illustrating a modified embodiment of each of the plurality of gas injection modules illustrated in FIG. 2.
  • the first gas injection module 130a may include the support frame 135, the partition member 135d, the first and second cover plates 136 and 137, and the insulating member ( 138, first and second gas injection plates 139a and 139b.
  • the support frame 135 is formed to include the first gas injection space S1 and the second gas injection space S2 to support the cover plates 136 and 137 and the gas injection plates 139a and 139b.
  • the support frame 135 is made of a metal material and is electrically connected to the chamber lid 115. In this case, the support frame 135 is inserted into the first module mounting unit 115a or installed on the upper surface of the chamber lid 115 to overlap the first module mounting unit 115a. Accordingly, the lower surface of the support frame 135 may be positioned the same as the lower surface of the chamber lid 115 or may protrude toward the substrate support 120 from the lower surface of the chamber lid 115.
  • the support frame 135 is bent vertically from an upper surface 135a supporting the cover plates 136 and 137 and a first gas injection space S1 and a second gas injection space S2. And a lower surface 135c that is bent from the lower surface of the sidewall 135b to have an opening, and supports the partition member 135d and each of the first and second gas injection plates 139a and 139b. It is composed.
  • the partition member 135d is made of an insulating material (for example, a ceramic material) and is installed perpendicular to the center portion of the support frame 135 so that the interior of the support frame 135 may be spaced between the first gas injection space S1 and the second.
  • the gas injection space S2 is defined, and the first gas injection space S1 and the second gas injection space S2 are spatially separated.
  • the partition member 135d supports the first and second cover plates 136 and 137 and the first and second gas injection plates 139a and 139b, respectively.
  • Each of the first gas injection space S1 and the second gas injection space S2 is defined by the side wall 135b of the support frame 135 but is spatially separated by the partition member 135d.
  • the first gas injection space S1 and the second gas injection space S2 may be formed to have the same or different areas. In this case, an area of the first gas injection space S1 may be larger or smaller than the second gas injection space S2.
  • the first cover plate 136 is formed in a flat plate shape to have a first area to cover an upper portion of the first gas injection space S1 defined in the support frame 135 described above.
  • the first cover plate 136 is coupled to each of the upper surface 135a and the partition member 135d of the support frame 135 by fastening members such as screws or bolts. This first cover plate 136 is in an electrically floating state.
  • the first cover plate 136 further includes a first gas supply hole 136h formed to communicate with the first gas injection space S1.
  • the first gas injection space S1 is connected to a gas supply means (not shown) through a first gas supply pipe 142 installed in the first cover plate 136 so as to communicate with the first gas supply hole 136h. . Accordingly, the first gas G1 is diffused in the first gas injection space S1 and supplied to the first gas injection plate 139a.
  • the second cover plate 137 is formed in a flat plate shape so as to have a second area equal to or different from the first area, and is electrically insulated from the first cover plate 136 by the partition member 135d. It is installed to cover the upper portion of the second gas injection space (S2) defined in 135. At this time, the second cover plate 137 is coupled to each of the upper surface 135a and the partition member 135d of the support frame 135 by fastening members such as screws or bolts. The second cover plate 137 is electrically connected to the aforementioned power supply means through the feed cable 152 to receive the aforementioned plasma power from the power supply means.
  • the second cover plate 137 further includes a second gas supply hole 137h formed to communicate with the second gas injection space S2.
  • the second gas injection space S2 is connected to a gas supply means (not shown) through a second gas supply pipe 144 provided in the second cover plate 137 so as to communicate with the second gas supply hole 137h. . Accordingly, the second gas G2 is diffused in the second gas injection space S2 and supplied to the second gas injection plate 139b.
  • the aforementioned feed cable 152 may not be directly connected to the second cover plate 137, but may be electrically connected to the second cover plate 137 through the second gas supply pipe 144.
  • the insulating member 138 is installed between the first cover plate 136 and the support frame 135, and is installed between the second cover plate 137 and the support frame 135, so that the first and second cover plates 136 are provided. 137 electrically insulates each from the support frame 135. The insulating member 138 may be installed between each of the first and second cover plates 136 and 137 and the support frame 135 by fastening members such as screws or bolts.
  • the first gas injection plate 139a is formed to have a first area and is inserted into the first gas injection space S1 of the support frame 135.
  • the first gas injection plate 139a injects the first gas G1 supplied from the first gas injection space S1 downward into one region of the first division space DS1.
  • the first gas injection plate 139a is supported by one side lower surface 131c of the support frame 131 and the partition member 135d and overlaps with one region of the first division space DS1. Accordingly, the upper surface of the first gas injection plate 139a faces the lower surface of the first cover plate 136 with the first gas injection space S1 therebetween. In addition, a lower surface of the first gas injection plate 139a is locally opposed to an upper surface predetermined region of the substrate support part 120 corresponding to one region of the first division space DS1.
  • the first gas injection plate 139a includes a plurality of first gas injection holes 139h1 formed at predetermined intervals so as to communicate with the first gas injection space S1 in common.
  • the first gas injection plate 139a receives the first gas G1 supplied from the first gas injection space S1 through the plurality of first gas injection holes 139h1, respectively. Spray downward in one region.
  • the second gas injection plate 139b is formed to have a second area equal to or different from that of the first gas injection plate 139a and is inserted into the second gas injection space S2 of the support frame 131.
  • the second gas injection plate 139b activates the second gas G2 supplied to the second gas injection space S2 and injects downward into the other region of the first division space DS1.
  • the second gas injection plate 139b is supported by one lower surface 131c of the support frame 131 and the partition member 135d and overlaps with the other region of the first division space DS1. Accordingly, the upper surface of the second gas injection plate 139b faces the lower surface of the second cover plate 137 with the second gas injection space S2 interposed therebetween.
  • the lower surface of the second gas injection plate 139b is locally opposed to the upper surface predetermined region of the substrate support part 120 corresponding to the other region of the first division space DS1.
  • the second gas injection plate 139b includes a plurality of second gas injection holes 139h2 formed at predetermined intervals so as to communicate with the second gas injection space S2 in common.
  • the second gas injection plate 139b is electrically connected to the chamber lead 115 through the support frame 135.
  • the first gas injection plate 139a is opposed to the second cover plate 137 to which plasma power is supplied and serves as a ground electrode for forming plasma in the second gas injection space S2.
  • the second gas injection plate 139a may be directly connected to a ground power source through a ground strap (not shown).
  • the first gas injection module 130a spatially separates the first and second gases G1 and G2 different from each other into the first division space DS1 and downwardly injects them, According to the plasma power supplied to the second cover plate 137, plasma is formed in the second gas injection space S2 to activate the second gas G2 and downwardly spray the second gas G2.
  • the second gas injection module 130b is inserted into and installed in the second module installation part 115b overlapping the second divided space DS2 locally defined on the substrate support part 120 so as to be different from each other. Is spatially separated and sprayed into the second divided space DS2, but the second gas is activated to spray into the second divided space DS2. Since the second gas injection module 130b is configured in the same manner as the first gas injection module 130a shown in FIG. 9, the detailed description thereof will be replaced with the above description.
  • the second gas injection module 130b injects the first gas G1 downward in one region of the second division space DS2 through the first gas injection space S1, and the second gas injection space ( Plasma is formed in S2 and the second gas G2 is activated to downwardly spray the other region of the second divided space DS2 to be spatially separated from the first gas G1.
  • the third gas injection module 130c is inserted into and installed in the third module installation unit 115c overlapping the third divided space DS3 locally defined on the substrate support unit 120 so as to be different from each other. Is spatially separated and injected into the third divided space DS3, but the second gas is activated to spray into the third divided space DS3. Since the third gas injection module 130c is configured in the same manner as the first gas injection module 130a illustrated in FIG. 9, the detailed description thereof will be replaced with the above description.
  • the third gas injection module 130c injects the first gas G1 downward in one region of the third division space DS3 through the first gas injection space S1, and the second gas injection space ( Plasma is formed in S2 and the second gas G2 is activated to downwardly spray the other region of the third divided space DS3 to be spatially separated from the first gas G1.
  • the fourth gas injection module 130d is inserted into and installed in the fourth module installation part 115d overlapping the fourth divided space DS4 locally defined on the substrate support part 120 so as to be different from each other. Is spatially separated and sprayed into the fourth divided space DS4, but the second gas is activated to spray into the fourth divided space DS4. Since the fourth gas injection module 130d is configured in the same manner as the first gas injection module 130a illustrated in FIG. 9, the detailed description thereof will be replaced with the above description.
  • the fourth gas injection module 130d injects the first gas G1 downward in one region of the fourth division space DS4 through the first gas injection space S1, and the second gas injection space ( Plasma is formed in S2 and the second gas G2 is activated to spray downwardly to the other region of the fourth divided space DS4 so as to be spatially separated from the first gas G1.
  • the substrate processing apparatus and the substrate processing method using the same according to the first embodiment of the present invention have been described as activating only the second gas and spraying the respective divided spaces, but also activating the first gas in each divided space. You can also spray.
  • the first gas may be activated by a plasma, microwave, heat source, laser, or the like.
  • the first gas is assumed to be activated by plasma.
  • FIG. 10 is a cross-sectional view for describing a plurality of gas injection modules in the substrate processing apparatus according to the second embodiment of the present invention.
  • each of the gas injection modules 130a, 130b, 130c, and 130d of the substrate processing apparatus may supply a first gas supplied to the first gas injection space S1.
  • G1 is activated to inject into one region of each of the divided regions DS1, DS2, DS3 and DS4, and activates the second gas G2 supplied to the second first gas ejection space S1 to activate each of the divided regions.
  • the first gas G1 is activated because the gas injection modules 130a, 130b, 130c, and 130d shown in FIG. 3 are configured in the same manner except that they are injected into the other regions of the DS1, DS2, DS3, and DS4. Only the configuration to make it will be described.
  • the first gas injection plate 133 of each gas injection module 130a, 130b, 130c, 130d is electrically connected to the power supply means 160 via the feed cable 162. Is connected.
  • the impedance matching circuit 164 may be connected to the feed cable 162. The impedance matching circuit 164 matches the load impedance and the source impedance of the plasma power supplied from the power supply means 160 to the first gas injection plate 133.
  • the first gas injection plate 133 connected to the power supply means 160 is opposed to the cover plate 132 with the first gas injection space S1 interposed therebetween, so that the first gas injection space 133 It serves as a plasma electrode for forming a plasma in S1). Accordingly, each of the gas injection modules 130a, 130b, 130c, and 130d uses the plasma power supplied from the power supply means 160 to the first gas injection plate 133 to plasma the first gas injection space S1. By activating the second gas G2, the activated second gas PG2 is injected into one region of each of the divided regions DS1, DS2, DS3, and DS4.
  • FIG. 11 is a cross-sectional view for describing a plurality of gas injection modules in the substrate processing apparatus according to the third embodiment of the present invention.
  • each of the gas injection modules 130a, 130b, 130c, and 130d of the substrate processing apparatus may supply a first gas supplied to the first gas injection space S1.
  • G1 is activated to inject into one region of each of the divided regions DS1, DS2, DS3 and DS4, and activates the second gas G2 supplied to the second first gas ejection space S1 to activate each of the divided regions.
  • the first gas G1 is activated because the gas injection modules 130a, 130b, 130c, and 130d shown in FIG. 10 are configured in the same manner except that they are injected into the other regions of the DS1, DS2, DS3, and DS4. Only the configuration to make it will be described.
  • the first cover plate 136 of each gas injection module 130a, 130b, 130c, 130d is electrically connected to the power supply means 160 via the feed cable 162.
  • the impedance matching circuit 164 may be connected to the feed cable 162.
  • the impedance matching circuit 164 matches the load impedance and the source impedance of the plasma power source supplied from the power supply unit 160 to the first cover plate 136.
  • the first cover plate 136 connected to the power supply means 160 is opposed to the first gas injection plate 139a with the first gas injection space S1 therebetween, thereby injecting the first gas in accordance with the plasma power source. It serves as a plasma electrode for forming plasma in the space S1. Accordingly, each of the gas injection modules 130a, 130b, 130c, and 130d uses the plasma power supplied from the power supply means 160 to the first cover plate 136 to plasma the first gas injection space S1. By activating the second gas G2, the activated second gas PG2 is injected into one region of each of the divided regions DS1, DS2, DS3, and DS4.
  • the substrate processing apparatus and the substrate processing method using the same according to the second and third embodiments of the present invention activate each of the first and second gases G1 and G2 using plasma, and activate the first And the above-described substrate processing method illustrated in FIGS. 4 and 5 and 6 to 8 except that the second gases PG1 and PG2 are spatially separated and sprayed onto the rotated substrate support 120. Since it is made the same as the detailed description thereof will be replaced by the above description.
  • the substrate processing apparatus and the substrate processing method using the same according to the second and third embodiments of the present invention include the first gas injection spaces S1 and each of the gas injection modules 130a, 130b, 130c and 130d.
  • Plasma is formed in each of the two gas injection spaces S2 to activate each of the first and second gases G1 and G2 to be spatially separated and sprayed on the rotated substrate support 120 to be deposited on each substrate W.
  • the deposition uniformity of the thin film may be increased, the film quality of the thin film may be easily controlled, and the cumulative thickness deposited in the process chamber 110 may be minimized to improve particles.
  • FIG. 12 is a table illustrating various embodiments of an operation of each gas injection module according to a control mode of a control module in the substrate processing apparatus and the substrate processing method using the same according to the first to third embodiments of the present disclosure. .
  • the control mode 1 activates and injects each of the first and second gases G1 and G2 through the gas injection modules 130a, 130b, 130c, and 130d. At this time, each of the first and second gases G1 and G2 is activated by the plasma as described above.
  • the gas injection modules 130a, 130b, 130c, and 130d are configured as shown in FIG. 10 or 11 described above.
  • the control mode 2 injects the first gas G1 into an inactive state through each of the gas injection modules 130a, 130b, 130c, and 130d, and activates and injects the second gas G2. At this time, the second gas G2 is activated by the plasma as described above.
  • the gas injection modules 130a, 130b, 130c, and 130d are configured as shown in FIG. 3 or 9 described above.
  • each gas injection module (130a, 130b, 130c, 130d) is configured without the power supply means 160 in the configuration shown in FIG. 10 or 11 described above, or according to the control of the control module
  • the power supply means 160 may be configured to not operate.
  • the control mode 3 activates and injects each of the first and second gases G1 and G2 through the first and third gas injection modules 130a and 130c, and supplies the first gas through the second gas injection module 130b. Only the G1 is activated and injected, and only the second gas G2 is activated and injected through the fourth gas injection module 130d. At this time, each of the first and second gases G1 and G2 is activated by the plasma as described above.
  • each gas injection module (130a, 130b, 130c, 130d) is configured as shown in Fig. 10 or 11 above, the second gas injection module 130b is in control of the control module Accordingly, only the first gas G1 is activated and injected, and the fourth gas injection module 130d also activates and injects only the second gas G2 under the control of the control module.
  • the second gas injection module 130b does not inject the second gas G2 and activates and injects only the first gas G1, thereby activating and injecting only the first gas G1. It can be configured to.
  • the second gas injection module 130b may be configured without the second gas injection space S2 in the configuration shown in FIG. 10 or 11, or may have the first gas G1 in the second gas injection space S2. ) May be configured to be supplied.
  • the fourth gas injection module 130d does not inject the first gas G1 and activates only the second gas G2, thereby activating only the second gas G2.
  • the fourth gas injection module 130d is configured without the first gas injection space S1 in the configuration shown in FIG. 10 or 11, or the second gas G2 in the first gas injection space S1. ) May be configured to be supplied.
  • the control mode 4 injects the first gas G1 into an inactive state through the first and third gas injection modules 130a and 130c, and the second gas through the second and fourth gas injection modules 130b and 130d. Activate and spray only (G2). At this time, the second gas G2 is activated by the plasma as described above.
  • each gas injection module (130a, 130b, 130c, 130d) is configured as shown in Figure 3 or 9 described above, the first and third gas injection module (130a, 130c) According to the control of the control module, only the first gas G1 is sprayed in an inactive state, and the second and fourth gas injection modules 130b and 130d activate and spray only the second gas G2 under the control of the control module. .
  • the first and third gas injection modules 130a and 130c do not inject the second gas G2 and inject only the first gas G1 in an inactive state. Only G1) may be configured to spray in an inactive state.
  • the first and third gas injection modules 130a and 130c may be configured without the second gas injection space S2 in the configuration shown in FIG. 3 or 9, or without the power supply means 150.
  • the first gas G1 may be supplied to the second gas injection space S2.
  • the second and fourth gas injection modules 130b and 130d do not inject the first gas G1 and activate only the second gas G2 to inject the second gas. It can be configured to activate and spray only G2.
  • the second and fourth gas injection modules 130b and 130d may be configured without the first gas injection space S1 in the configuration shown in FIG. 3 or 9, or the configuration shown in FIG. 10 or 11.
  • the first gas injection space (S1) may be configured to be supplied with the second gas (G2).
  • the control mode 5 activates and injects the first gas G1 through the first and third gas injection modules 130a and 130c, and controls the second gas through the second and fourth gas injection modules 130b and 130d. Activate and spray only G2). At this time, the first and second gases G1 and G2 are activated by the plasma as described above.
  • each gas injection module (130a, 130b, 130c, 130d) is configured as shown in Figure 10 or 11 above, wherein the first and third gas injection module (130a, 130c) Only the first gas G1 is activated and sprayed under the control of the control module, and the second and fourth gas injection modules 130b and 130d activate and inject only the second gas G2 under the control of the control module.
  • the first and third gas injection modules 130a and 130c do not inject the second gas G2 and activate only the first gas G1 to inject the first gas G1.
  • the first and third gas injection modules 130a and 130c may be configured without the second gas injection space S2 in the configuration shown in FIG. 10 or 11, or may be disposed in the second gas injection space S2.
  • the first gas G1 may be configured to be supplied.
  • the second and fourth gas injection modules 130b and 130d do not inject the first gas G1 and activate only the second gas G2 to inject the second gas. It can be configured to activate and spray only G2.
  • the second and fourth gas injection modules 130b and 130d may be configured without the first gas injection space S1 in the configuration shown in FIG. 3 or 9, or the configuration shown in FIG. 10 or 11.
  • the first gas injection space (S1) may be configured to be supplied with the second gas (G2).
  • the control mode 6 injects the first gas G1 into an inactive state through the first and third gas injection modules 130a and 130c, activates and injects the second gas G2, and the second gas injection module Only the first gas G1 is sprayed in an inactive state through the 130b, and only the second gas G2 is activated and sprayed through the fourth gas spray module 130d. At this time, the second gas G2 is activated by the plasma as described above.
  • each gas injection module (130a, 130b, 130c, 130d) is configured as shown in Fig.
  • the second gas injection module 130b is in control of the control module Accordingly, only the first gas G1 is injected in an inactive state, and the fourth gas injection module 130d activates and injects only the second gas G2 under the control of the control module.
  • the first and third gas injection module (130a, 130c) is configured without the power supply means 160 in the configuration shown in FIG. 10 or 11 described above, or control of the control module Accordingly, the power supply means 160 may be configured to not operate.
  • the second gas injection module 130b does not inject the second gas G2 and injects only the first gas G1 in an inactive state, thereby injecting only the first gas G1.
  • the second gas injection module 130b may be configured without the second gas injection space S2 in the configuration shown in FIG. 3 or 9, or in the configuration shown in FIG. 10 or 11.
  • the first gas G1 may be supplied to the second gas injection space S2 without the 150 and 160.
  • the fourth gas injection module 130d does not inject the first gas G1 and activates and injects only the second gas G2, thereby activating and injecting only the second gas G2. It can be configured to.
  • the fourth gas injection module 130d may be configured without the first gas injection space S1 in the configuration shown in FIG. 3 or 9, or the first gas injection in the configuration shown in FIG. 10 or 11.
  • the second gas G2 may be supplied to the space S1.
  • each gas injection module 130a, 130b, 130c, 130d may operate according to the waveform diagram shown in any one of FIGS. 5, 6, 7, and 8. Can be.
  • each gas injection module (130a, 130b, 130c, 130d) is not limited to each of the control modes 1 to 6 described above, at least among the gas injection module (130a, 130b, 130c, 130d)
  • One gas injection module is controlled or configured to activate and inject the second gas G2 while the other gas injection module activates or deactivates at least one kind of gas among the first and second gases G1 and G2. It may be controlled or configured to spray in a state.
  • FIG. 13 is a schematic view illustrating a substrate processing apparatus according to a fourth exemplary embodiment of the present invention
  • FIG. 14 is a cross-sectional view for describing the second and fourth gas injection modules illustrated in FIG. 13.
  • the substrate processing apparatus 400 may include a process chamber 110, a chamber lid 115, a substrate support 120, and first to fourth gases. It is configured to include a gas injection unit 130 having an injection module (130a, 430b, 130c, 430d).
  • the substrate processing apparatus 400 having such a configuration except that the second and fourth gas injection modules 430b and 430d of the gas injection unit 130 activate and spray the purge gas G3. Since the same components as those of the substrate processing apparatus 100 illustrated in FIG. 2 are the same, overlapping descriptions of the same components will be omitted, and the same reference numerals will be given to the same components.
  • the second gas injection module 430b is inserted into and installed in the second module installation part 115b overlapping the second divided space DS2 locally defined on the substrate support part 120.
  • the purge gas G3 is activated and injected into the second divided space DS2.
  • the second gas may be activated by a plasma, microwave, heat source, laser, or the like.
  • the second gas is assumed to be activated by plasma.
  • the second gas injection module 430a includes a support frame 431, a cover plate 432, and a purge gas injection plate 433.
  • the support frame 431 is formed to include the purge gas injection space S3 to support the cover plate 432 and the purge gas injection plate 433.
  • the support frame 431 is made of an insulating material (eg, a ceramic material) to electrically insulate the cover plate 432 and the purge gas injection plate 433.
  • the support frame 431 is inserted into the second module mounting unit 115b or installed on the upper surface of the chamber lid 115 so as to overlap the second module mounting unit 115b. Accordingly, the lower surface of the support frame 431 may be positioned the same as the lower surface of the chamber lid 115, or may protrude toward the substrate support 120 from the lower surface of the chamber lid 115.
  • the support frame 431 has an upper surface 431a supporting the cover plate 432, a sidewall 431b bent vertically from the upper surface 431a to provide a purge gas injection space S3, and an opening.
  • the lower surface 431c is bent from the lower surface of the side wall 431b to support the purge gas injection plate 433.
  • the purge gas injection space S3 may be formed to have an area equal to or smaller than the first gas injection space S1 or the second gas injection space S2 of the above-described embodiments.
  • the cover plate 432 is formed in a flat plate shape to cover the upper surface of the support frame 431 described above. At this time, the cover plate 432 is coupled to the upper surface 431a of the support frame 431 by fastening members such as screws or bolts.
  • the cover plate 432 may be electrically connected to the chamber lid 115 to be electrically grounded, or may be electrically grounded through a separate ground strap (not shown) to serve as a ground electrode opposite to the purge gas injection plate 433. Do it.
  • the cover plate 432 further includes a purge gas supply hole 431e formed to communicate with the purge gas injection space S3.
  • the purge gas injection space S3 is connected to a gas supply means (not shown) through a purge gas supply pipe 442 installed in the cover plate 432 to communicate with the purge gas supply hole 431e. Accordingly, the purge gas G3 is diffused in the purge gas injection space S3 and supplied to the purge gas injection plate 433.
  • the purge gas injection plate 433 injects the purge gas G3 supplied from the purge gas injection space S3 downward to one region of the second division space DS2.
  • the purge gas injection plate 433 is supported by the lower surface 431c of the support frame 431 so as to overlap the opening provided in the lower surface 431c of the support frame 431. Accordingly, the upper surface of the purge gas injection plate 433 is opposed to the lower surface of the cover plate 432 with the purge gas injection space S3 interposed therebetween. The lower surface of the purge gas injection plate 433 is locally opposed to a predetermined region of the upper surface of the substrate support part 120 corresponding to one region of the second divided space DS2.
  • the purge gas injection plate 433 includes a plurality of purge gas injection holes 433h formed at predetermined intervals so as to communicate with the purge gas injection space S3 in common.
  • the purge gas injection plate 433 is electrically connected to the power supply means 170 through a feed cable 172.
  • An impedance matching circuit 174 may be connected to the feed cable 172.
  • the impedance matching circuit 174 matches the load impedance and the source impedance of the plasma power source supplied from the power supply unit 170 to the purge gas injection plate 433.
  • the fourth gas injection module 430d is inserted into and installed in the fourth module installation unit 115d overlapping the fourth divided space DS4 locally defined on the substrate support 120, and thus, in the fourth divided space DS4.
  • the purge gas G3 is activated and injected into the fourth divided space DS4. Since the fourth gas injection module 430d is configured in the same manner as the second gas injection module 430b shown in FIG. 14, the detailed description thereof will be replaced with the above description. As such, the fourth gas injection module 430d forms a plasma in the purge gas injection space S3 to which the purge gas G3 is supplied, activates the purge gas G3, and sprays the gas downwardly into the fourth divided space DS4. .
  • the plasma power is applied to the purge gas injection plate 433 in which the purge gas injection holes 433h are formed, but the present invention is not limited thereto. May be applied to the cover plate 432.
  • the cover plate 432 is electrically insulated from the support frame 431 by an insulating member (not shown).
  • the support frame 431 is made of a metal material to electrically ground the purge gas injection plate 433.
  • 15 is a view for explaining a substrate processing method using the substrate processing apparatus according to the fourth embodiment of the present invention described above.
  • FIG. 15 and FIG. 13 and FIG. 14 a substrate processing method using a substrate processing apparatus according to a fourth embodiment of the present invention will be described below.
  • the plurality of substrates W are loaded on the substrate support part 120 at regular intervals and seated thereon.
  • the plurality of substrates W are loaded and rotated in the predetermined direction.
  • first and third divided spaces DS1, the first gas G1 and the second gas PG2 deactivated through the first and third gas injection modules 130a and 130c are spatially separated from each other.
  • DS3 Spray downward on each one.
  • Each of the first and third gas injection modules 130a and 130c may operate according to the waveform diagram shown in any one of FIGS. 5, 6, 7, and 8.
  • the activated purge gas PG3 is injected downward into the second and fourth divided spaces DS2 and DS4 through the second and fourth gas injection modules 430b and 430d, respectively.
  • the purge gas G3 is supplied to the purge gas injection space S3 of each of the second and fourth gas injection modules 430b and 430d, and the second and fourth gas injection modules 430b and 430d are supplied to each of the second and fourth gas injection modules 430b and 430d.
  • a plasma power is applied to form a plasma in the purge gas injection space S3 to activate the purge gas G3 through the plasma, and the activated purge gas PG3 is activated in the second and fourth divided spaces DS2 and DS4. Spray down).
  • Each of the second and fourth gas injection modules 430b and 430d may continuously inject the above-described activated purge gas G3 or may be sprayed at predetermined intervals, or may be sequentially sprayed.
  • each of the plurality of substrates W mounted on the substrate support part 120 sequentially passes through each of the divided spaces DS1, DS2, DS3, and DS4 in accordance with the rotation of the substrate support part 120.
  • a predetermined thin film material is deposited on each of the plurality of substrates W by mutual reaction of the first gas G1 and the activated second gas PG2.
  • the activated purge gas PG3 sprayed onto the plurality of substrates W may not react with the first gas G1 and / or the first gas G1 that are not deposited on the substrate W, and remain in the second region.
  • the gas G2 is purged.
  • each of the second and fourth gas injection modules 430b and 430d sprays activated purge gas PG3.
  • the present invention is not limited thereto, and each of the second and fourth gas injection modules 430b and 430d uses the deactivated purge gas G3, that is, the purge gas G3 supplied to the purge gas injection space S3 as it is. It may spray on W).
  • the substrate processing apparatus according to the fourth embodiment of the present invention is configured without the power supply means 170 described above, or the purge gas injection of each of the second and fourth gas injection modules 430b and 430d through the control module.
  • the power supply means 170 is controlled so that plasma power is not applied to the plate 433 or the cover plate 432.
  • FIG. 16 is a schematic view illustrating a substrate processing apparatus according to a fifth exemplary embodiment of the present invention
  • FIG. 17 is a plan view illustrating an arrangement structure of each gas injection module illustrated in FIG. 16.
  • the substrate processing apparatus 500 may include a process chamber 110, a chamber lid 115, a substrate support 120, and a plurality of gas injection modules ( And a gas injection unit 130 having 130a, 130b, 130c, and 130d and a purge gas injection module 130e.
  • the substrate processing apparatus 500 having such a configuration includes the substrate processing apparatus 100 illustrated in FIG. 2 except that the gas injection unit 130 further includes a purge gas injection module 130e. Since duplicate descriptions of the same components are the same, the same reference numerals will be given to the same components.
  • the purge gas injection module 130e includes a plurality of purge gas injection spaces defined between the plurality of divided spaces DS1, DS2, DS3, and DS4 that are spatially separated between the chamber lid 115 and the substrate support 120. It is installed in the chamber lid 115 so as to overlap the PGS. Accordingly, the plurality of gas injection modules 130a, 130b, 130c, and 130d and the purge gas injection module 130e are alternately disposed on the substrate support 120.
  • the purge gas injection module 130e is formed to have a "+" shape and is inserted into the purge gas injection module installation unit 115e formed in the chamber lid 115.
  • the purge gas injection module 130e injects purge gas G3 supplied from a purge gas supply means (not shown) to each of the plurality of purge gas injection spaces PGS.
  • the purge gas G3 purges the remaining second gas G2 that does not react with the first gas G1 and / or the first gas G1 that is not deposited on the substrate W.
  • the purge gas G3 is injected between the divided spaces DS1, DS2, DS3, and DS4 overlapping the gas injection modules 130a, 130b, 130c, and 130d, the purge gas G3 is injected from the adjacent gas injection modules. It also serves to separate the gas.
  • the purge gas G3 may be formed of at least one gas of nitrogen (N 2), argon (Ar), xenon (Ze), and helium (He).
  • the plurality of substrates W are loaded on the substrate support part 120 at regular intervals and seated thereon.
  • the plurality of substrates W are loaded and rotated in the predetermined direction.
  • each gas injection module (130a, 130b, 130c, 130d) is operated according to the waveform diagram shown in any one of Figs. 5, 6, 7, and 8, or control mode 1 shown in Fig. It may operate in accordance with any one of the control mode.
  • the purge gas G3 is injected downward through each purge gas injection space PGS between the divided spaces DS1, DS2, DS3, and DS4 through the purge gas injection module 130e.
  • each of the plurality of substrates W mounted on the substrate support part 120 sequentially passes through each of the divided spaces DS1, DS2, DS3, and DS4 in accordance with the rotation of the substrate support part 120.
  • a predetermined thin film material is deposited on each of the plurality of substrates W by mutual reaction of the first gas G1 and the activated second gas PG2.
  • the purge gas G3 injected to the plurality of substrates W may not react with the first gas G1 and / or the first gas G1 which are not deposited on the substrate W, and the remaining second gas ( G2) will be purged.
  • the above-described purge gas injection module 130e may activate and inject the purge gas G3.
  • the purge gas G3 may be activated by plasma, microwave, heat source, laser, or the like.
  • the above-described purge gas injection module 130e may activate and inject the purge gas G3 using plasma.

Abstract

La présente invention concerne un appareil de traitement de substrats et un procédé de traitement de substrats permettant d'augmenter l'uniformité de dépôt d'un film mince déposé sur un substrat. L'appareil de traitement de substrats selon la présente invention comprend ainsi une chambre de traitement, un support de substrat, un couvercle de chambre, et un diffuseur de gaz. Le support de substrat est disposé dans la chambre de traitement de façon à supporter au moins un substrat. Le couvercle de chambre couvre la partie supérieure de la chambre de traitement de façon à faire face au support de substrat. Le diffuseur de gaz est disposé radialement sur le couvercle de la chambre de façon à faire face localement au support de substrat. Ce diffuseur de gaz est constitué de plusieurs modules de diffusion de gaz qui diffusent localement au moins un type de gaz sur le support de substrat. L'un au moins des modules de diffusion de gaz de la pluralité de modules de diffusion de gaz rend actif le type de gaz considéré et le diffuse.
PCT/KR2013/000823 2012-02-03 2013-02-01 Appareil de traitement de substrats et procédé de traitement de substrats WO2013115590A1 (fr)

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KR1020120011489A KR20130090287A (ko) 2012-02-03 2012-02-03 기판 처리 장치 및 기판 처리 방법

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