TWI585825B - 基板處理設備與基板處理方法 - Google Patents
基板處理設備與基板處理方法 Download PDFInfo
- Publication number
- TWI585825B TWI585825B TW102104074A TW102104074A TWI585825B TW I585825 B TWI585825 B TW I585825B TW 102104074 A TW102104074 A TW 102104074A TW 102104074 A TW102104074 A TW 102104074A TW I585825 B TWI585825 B TW I585825B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- gas distribution
- space
- substrate holder
- modules
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 328
- 238000003672 processing method Methods 0.000 title claims description 48
- 239000007789 gas Substances 0.000 claims description 1186
- 238000009826 distribution Methods 0.000 claims description 678
- 238000011010 flushing procedure Methods 0.000 claims description 106
- 238000000034 method Methods 0.000 claims description 44
- 230000008569 process Effects 0.000 claims description 43
- 238000005192 partition Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 13
- 230000003213 activating effect Effects 0.000 claims description 8
- 230000004913 activation Effects 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims 3
- 230000005611 electricity Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120011489A KR20130090287A (ko) | 2012-02-03 | 2012-02-03 | 기판 처리 장치 및 기판 처리 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201340176A TW201340176A (zh) | 2013-10-01 |
| TWI585825B true TWI585825B (zh) | 2017-06-01 |
Family
ID=48905556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102104074A TWI585825B (zh) | 2012-02-03 | 2013-02-01 | 基板處理設備與基板處理方法 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20130090287A (fr) |
| TW (1) | TWI585825B (fr) |
| WO (1) | WO2013115590A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI738006B (zh) * | 2018-06-20 | 2021-09-01 | 日商愛發科股份有限公司 | 真空處理裝置、支持軸 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6332746B2 (ja) * | 2013-09-20 | 2018-05-30 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| KR102215640B1 (ko) * | 2014-03-31 | 2021-02-17 | 주성엔지니어링(주) | 기판 처리 장치와 이를 이용한 박막 형성 방법 및 반도체 소자의 제조 방법 |
| KR102155281B1 (ko) * | 2017-07-28 | 2020-09-11 | 주성엔지니어링(주) | 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060194347A1 (en) * | 2005-02-28 | 2006-08-31 | Samsung Electro-Mechanics Co., Ltd. | Method for fabricating superlattice semiconductor structure using chemical vapor diposition |
| TW200736413A (en) * | 2006-03-21 | 2007-10-01 | Atto Co Ltd | Apparatus for depositing atomic layer using gas separation type showerhead |
| TW201203332A (en) * | 2007-05-30 | 2012-01-16 | Applied Materials Inc | Substrate cleaning chamber and components |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100531555B1 (ko) * | 2002-02-14 | 2005-11-28 | 주성엔지니어링(주) | 회전가능한 1개 이상의 가스분사기가 구비된 박막증착장치 및 이를 이용한 박막 증착방법 |
| KR100558922B1 (ko) * | 2004-12-16 | 2006-03-10 | (주)퓨전에이드 | 박막 증착장치 및 방법 |
| KR101554334B1 (ko) * | 2009-11-18 | 2015-09-18 | 주식회사 원익아이피에스 | 샤워헤드 어셈블리 및 이를 구비한 박막증착장치 및 박막증착방법 |
| KR101121430B1 (ko) * | 2009-12-30 | 2012-03-16 | 엘아이지에이디피 주식회사 | 화학기상 증착장치 |
-
2012
- 2012-02-03 KR KR1020120011489A patent/KR20130090287A/ko active Search and Examination
-
2013
- 2013-02-01 WO PCT/KR2013/000823 patent/WO2013115590A1/fr active Application Filing
- 2013-02-01 TW TW102104074A patent/TWI585825B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060194347A1 (en) * | 2005-02-28 | 2006-08-31 | Samsung Electro-Mechanics Co., Ltd. | Method for fabricating superlattice semiconductor structure using chemical vapor diposition |
| TW200736413A (en) * | 2006-03-21 | 2007-10-01 | Atto Co Ltd | Apparatus for depositing atomic layer using gas separation type showerhead |
| TW201203332A (en) * | 2007-05-30 | 2012-01-16 | Applied Materials Inc | Substrate cleaning chamber and components |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI738006B (zh) * | 2018-06-20 | 2021-09-01 | 日商愛發科股份有限公司 | 真空處理裝置、支持軸 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013115590A1 (fr) | 2013-08-08 |
| TW201340176A (zh) | 2013-10-01 |
| KR20130090287A (ko) | 2013-08-13 |
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