TWI585825B - Substrate processing apparatus and substrate processing method - Google Patents

Description

Substrate processing equipment and substrate processing method

The present disclosure relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus and a substrate processing method, which contribute to improving deposition uniformity in a film deposited on a substrate.

Generally, in order to manufacture a solar cell, a semiconductor device, and a flat display device, it is necessary to form a predetermined thin film layer, a thin film circuit pattern, or an optical pattern on the surface of the substrate. Therefore, a semiconductor manufacturing process can be performed, for example, a thin film deposition process of depositing a thin film of a predetermined material on a substrate, a photo process of selectively exposing the thin film with the photosensitive material, and a selective removal of the exposed portion of the thin film to form Pattern etching process.

The semiconductor manufacturing process is completed inside the substrate processing apparatus, and the substrate processing apparatus is designed to suit the optimum situation. Recently, substrate processing equipment using plasma is generally used to perform deposition or etching processes.

The semiconductor manufacturing equipment using plasma may be a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film and a plasma etching apparatus for etching and patterning a thin film.

"Fig. 1" shows a general substrate processing equipment.

Referring to FIG. 1, a general substrate processing apparatus includes a chamber 10, a plasma electrode 20, a susceptor 30, and a gas distribution means 40.

The chamber 10 provides a reaction space for substrate processing. In this case, a predetermined portion of the bottom surface of the chamber 10 communicates with the exhaust port 12 for releasing gas from the reaction space.

A plasma electrode 20 is provided above the chamber 10 to seal the reaction space.

One side of the plasma electrode 20 is electrically connected to the RF power source 24 through the matching component 22. The RF power source 24 generates RF power and supplies the generated RF power to the plasma electrode 20.

Further, the central portion of the plasma electrode 20 is in communication with the gas supply pipe 26, wherein the gas supply pipe 26 supplies a source gas for the substrate processing.

The matching component 22 is coupled between the plasma electrode 20 and the RF power source 24 to match the load impedance and source impedance of the RF power supplied by the RF power source 24 with the plasma electrode 20.

The susceptor 30 is provided inside the chamber 10, and the susceptor 30 supports a plurality of substrates W loaded from the outside. The susceptor 30 corresponds to an opposite electrode which is opposite to the plasma electrode 20. The base 30 is electrically grounded through the lift shaft 32 of the lift base 30.

The lifting shaft 32 is moved up and down through a lifting device (not shown). In this case, the lifting shaft 32 is surrounded by bellows 34, the bellows 34 is used to seal the lifting shaft 32 and the bottom surface of the chamber 10.

A gas distribution device 40 is provided below the plasma electrode 20, wherein the gas distribution device 40 faces the base 30. In this case, the gas diffusion space 42 is formed between the gas distribution device 40 and the plasma electrode 20. Inside the gas diffusion space 42, the source gas supplied through the gas supply pipe 26 of the plasma electrode 20 is diffused. The gas distribution device 40 uniformly distributes the source gas to the entire area of the reaction space through a plurality of gas supply holes 44, wherein the gas supply holes 44 communicate with the gas diffusion space 42.

In the case of a general substrate processing apparatus, after the substrate W is loaded onto the susceptor 30, a predetermined source gas is dispersed into the reaction space of the chamber 10, and radio frequency power is supplied to the plasma electrode 20, thereby being at the susceptor 30. A plasma is formed in the reaction space with the gas distribution device 40, whereby the source material of the source gas is deposited on the substrate W by means of plasma.

However, since the space for distributing the source gas is the same as the space for forming the plasma, the general substrate processing apparatus has the following problems.

First, the plasma is formed on the substrate W, whereby the substrate W may be damaged by the plasma.

Further, the density of the plasma formed on the entire area of the susceptor 30 is not uniform, so that the uniformity of the film material deposited on the substrate W is deteriorated, and it is difficult to control the quality of the film.

In addition, since the plasma is formed over the entire area of the susceptor 30, the thickness of the source material deposited on the chamber 10 and the source material deposited on the substrate W are The thickness is increased so that the cleaning cycle of the chamber 10 is shortened.

The present invention therefore provides a substrate processing apparatus and a substrate processing method that substantially obviate one or more of the problems caused by the limitations and disadvantages of the prior art.

An aspect of the present invention provides a substrate processing apparatus and a substrate processing method for separating a source gas distributed on a substrate from a reaction gas, which contributes to improving uniformity of a film deposited on the substrate.

Other advantages, objects, and features of the invention will be set forth in part in the description which follows, It is understood or can be derived from the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the <RTIgt;

The present invention provides a substrate processing apparatus including: a process chamber; a substrate holder for supporting at least one of the plurality of substrates, in order to obtain the object and other features of the present invention. a substrate holder is provided in the processing chamber; a chamber cover facing the substrate holder, the chamber cover is for covering the processing chamber; and a gas distribution portion including a plurality of gas distribution modules, the radiation pattern is provided in the chamber In the cover, wherein the gas distribution modules partially face the substrate holder and locally distribute at least one gas onto the substrate holder, wherein at least one of the gas distribution modules is activated at least a gas and the distribution of activated gases.

In another aspect of the present invention, a substrate processing apparatus includes: a processing chamber; a substrate holder for supporting at least one of the plurality of substrates; the substrate holder is provided in the processing chamber; and the chamber cover facing the substrate holder a chamber cover for covering the process chamber; and a gas distribution portion including a plurality of gas distribution modules, which are provided in the chamber cover according to the radiation pattern, wherein the plurality of gas distribution modules face the chamber cover and the substrate holder a space partitioning and defining a divided space, wherein a part of the gas distribution modules of the plurality of gas distribution modules spatially separate at least one gas selected from the first gas and the second gas, and the partitioned The gas is in each divided space.

In another aspect of the present invention, a substrate processing apparatus includes: a processing chamber; a substrate holder for supporting at least one of the plurality of substrates; the substrate holder is provided in the processing chamber; and the chamber cover facing the substrate holder a chamber cover for covering the process chamber; and a gas distribution portion including a plurality of gas distribution modules, which are provided in the chamber cover according to the radiation pattern, and partially facing the substrate holder, wherein the plurality of gas distribution modules are The partial gas distribution module includes a first gas distribution space for distributing the first gas and a second gas distribution space for distributing the second gas, and a plasma is formed inside the second gas distribution space.

In another aspect of the present invention, a substrate processing method includes: placing a plurality of substrates on a substrate holder of a processing chamber at a fixed interval; rotating a substrate holder on which a plurality of substrates are placed; and activating at least A gas, and at least one of a plurality of gas distribution modules provided in a radiation pattern in a chamber cover for covering the process chamber, locally distributing the activated gas to the substrate holder.

In another aspect of the invention, a substrate processing method includes: (A) placing a plurality of substrates on a substrate holder of a processing chamber at a fixed interval; and (B) rotating a substrate holder on which a plurality of substrates are placed; (C) spatially separating at least one gas selected from the first gas and the second gas, and a plurality of gas distribution modules provided in a radiation pattern through a chamber cover for covering the process chamber, the partial distribution being The separated gases are applied to the substrate holder, wherein during step (C), a portion of the gas distribution module activates the selected gas and dispenses the activated gas.

In another aspect of the invention, a substrate processing method includes: (A) placing a plurality of substrates on a substrate holder of a processing chamber at a fixed interval; and (B) rotating a substrate holder on which a plurality of substrates are placed; (C) partially distributing gas to the substrate holder through a plurality of gas distribution modules provided in the radiation pattern in the chamber cover, wherein during the step (C), a portion of the gas distribution modules of the plurality of gas distribution modules A first gas distribution space for distributing the first gas and a second gas distribution space for distributing the second gas are included, and a plasma is formed inside the second gas distribution space.

In another aspect of the invention, a substrate processing method includes: (A) placing a plurality of substrates on a substrate holder of a processing chamber at a fixed interval; and (B) rotating a substrate holder on which a plurality of substrates are placed; (C) through The plurality of gas distribution modules provided in the radiation pattern in the chamber cover partially distribute the gas to the substrate holder, wherein the step (C) comprises: partially distributing the gas distribution module through the plurality of gas distribution modules At least one of the first gas and the second gas is applied to the substrate holder; and the remaining gas distribution module of the plurality of gas distribution modules partially distributes the flushing gas to the substrate holder.

It is to be understood that the foregoing general description of the invention and the claims

W‧‧‧Substrate

10‧‧‧ chamber

12‧‧‧Exhaust port

20‧‧‧ Plasma Electrode

22‧‧‧Matching components

24‧‧‧RF power supply

26‧‧‧ gas supply pipe

30‧‧‧Base

32‧‧‧ Lifting shaft

34‧‧‧ bellows

40‧‧‧Gas distribution device

42‧‧‧ gas diffusion space

44‧‧‧ Air supply holes

100‧‧‧Substrate processing equipment

110‧‧‧Processing chamber

115‧‧‧Case cover

115a, 115b, 115c, 115d‧‧‧ module receiver

120‧‧‧Substrate support

130‧‧‧Gas Distribution Department

130a, 130b, 130c, 130d‧‧‧ gas distribution module

DS1, DS2, DS3, DS4‧‧‧ split space

131‧‧‧ bracket frame

131a‧‧‧ upper surface

131b‧‧‧ sidewall

131c‧‧‧ lower surface

131d‧‧‧ partition wall

131e‧‧‧First gas supply hole

131f‧‧‧second gas supply hole

132‧‧‧ cover

133, 134‧‧‧ gas distribution board

133h‧‧‧First gas distribution hole

134h‧‧‧Second gas distribution hole

135‧‧‧ bracket frame

135a‧‧‧ upper surface

135b‧‧‧ side wall

135c‧‧‧ lower surface

135d‧‧‧ partition wall

136, 137‧‧ ‧ cover

136h‧‧‧First gas supply hole

137h‧‧‧second gas supply hole

138‧‧‧Insulation components

139a, 139b‧‧‧ gas distribution board

139h1‧‧‧First gas distribution hole

139h2‧‧‧Second gas distribution hole

142‧‧‧First gas supply pipe

144‧‧‧Second gas supply pipe

150‧‧‧Power supply unit

152‧‧‧ feeder cable

154‧‧‧ impedance matching circuit

G1, PG1‧‧‧ first gas

G2, PG2‧‧‧ second gas

S1‧‧‧First gas distribution space

S2‧‧‧Second gas distribution space

160‧‧‧Power supply unit

162‧‧‧ feeder cable

164‧‧‧ impedance matching circuit

170‧‧‧Power supply unit

172‧‧‧ feeder cable

174‧‧‧ impedance matching circuit

400‧‧‧Substrate processing equipment

430b‧‧‧Second gas distribution module

430d‧‧‧fourth gas distribution module

431‧‧‧Support frame

431a‧‧‧ upper surface

431b‧‧‧ sidewall

431c‧‧‧ lower surface

431e‧‧‧ flushing gas supply hole

432‧‧‧ cover

433‧‧‧ flushing gas distribution plate

433h‧‧‧ flushing gas distribution hole

G3, PG3‧‧‧ flushing gas

S3‧‧‧ flushing gas distribution space

442‧‧‧ flushing gas supply pipe

PGS‧‧‧ flushing gas distribution space

500‧‧‧Substrate processing equipment

Fig. 1 is a general substrate processing apparatus.

Fig. 2 is a substrate processing apparatus according to a first embodiment of the present invention.

Figure 3 is a cross-sectional view of a plurality of gas distribution modules shown in Figure 2.

Fig. 4A is a substrate processing method using the substrate processing apparatus of the first embodiment of the present invention described above.

Fig. 4B is a waveform diagram of the sequential operation of the first to fourth gas distribution modules shown in Fig. 4A.

Figs. 5A to 5C are waveform diagrams showing various modified examples of the substrate processing method of the first to fourth gas distribution modules shown in Fig. 2.

Fig. 6 is a cross-sectional view showing a modified example of each gas distribution module shown in Fig. 2.

Figure 7 is a cross-sectional view showing a plurality of gas distribution modules in a substrate processing apparatus according to a second embodiment of the present invention.

Figure 8 is a cross-sectional view showing a plurality of gas distribution modules in a substrate processing apparatus according to a third embodiment of the present invention.

Figure 9 is a substrate processing apparatus according to a fourth embodiment of the present invention.

Figure 10 is a cross-sectional view of the second and fourth gas distribution modules shown in Figure 9.

Fig. 11 is a substrate processing method using the substrate processing apparatus of the fourth embodiment of the present invention.

Figure 12 is a substrate processing apparatus of a fifth embodiment of the present invention.

Figure 13 is a plan view showing the arrangement of the gas distribution modules shown in Figure 12.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The "second drawing" is a substrate processing apparatus according to a first embodiment of the present invention. The "figure 3" is a cross-sectional view of a plurality of gas distribution modules shown in "Fig. 2".

Referring to FIG. 2 and FIG. 3, the substrate processing apparatus according to the first embodiment of the present invention includes a process chamber 110, a chamber cover 115, a substrate holder 120, and a gas distribution part 130.

The process chamber 110 provides a reaction space for substrate processing, such as a thin film deposition process. The bottom surface and/or the lateral surface of the process chamber 110 communicates with an exhaust gas (not shown), wherein the exhaust gas is used to release the gas in the reaction space.

A chamber cover 115 is provided on the process chamber 110, that is, The chamber cover 115 covers the process chamber 110. The chamber cover 115 supports the gas distribution portion 130, wherein the chamber cover 115 includes a plurality of module receivers 115a, 115b, 115c, and 115d, and the plurality of module receivers 115a, 115b, 115c, and 115d are provided at regular intervals. For example, it is in a radial pattern. In this case, the gas distribution modules included in the gas distribution unit 130 are inserted into the plurality of module receivers 115a, 115b, 115c, and 115d included in the chamber cover 115, respectively. A plurality of module receivers 115a, 115b, 115c, and 115d are symmetrically provided in a diagonal direction with respect to a center point of the chamber cover 115, that is, a plurality of module receivers 115a, 115b, 115c, and 115d. It is placed at every 90°.

In the "second drawing", the chamber cover 115 includes four module receivers 115a, 115b, 115c, and 115d, but is not limited thereto. For example, the chamber cover 115 includes 2 x N (N is an integer greater than 0) module receivers that are provided symmetrically with respect to the center of the chamber cover 115. In this case, the plurality of module receivers 115a, 115b, 115c, and 115d are symmetrical with each other with respect to the center point of the chamber cover 115 in the diagonal direction. Hereinafter, it is assumed that the chamber cover 115 includes first to fourth module receivers 115a, 115b, 115c, and 115d.

The substrate holder 120 is rotatably provided inside the process chamber 110, whereby the substrate holder 120 is electrically floating. The substrate holder 120 is supported by a rotating shaft (not shown) that extends through a central portion of the bottom surface of the processing chamber 110. Since the rotating shaft is rotated by driving a shaft driving assembly (not shown), the substrate holder 120 is rotated to a predetermined direction. The bottom of the process chamber 110 The outwardly exposed rotating shaft is sealed by a bellows (not shown), wherein the bellows is provided on the underside of the process chamber 110.

The substrate holder 120 supports at least one substrate W, wherein the substrate W is loaded through an external substrate loading device (not shown). The substrate holder 120 is formed in the shape of a circular plate. The substrate W is a semiconductor substrate or a wafer. It is preferable that the plurality of bulk substrates W are arranged in a circular pattern on the substrate holder 120 at regular intervals, thereby increasing the throughput of the substrate processing.

The gas distribution unit 130 is provided in such a manner that each gas distribution module included in the gas distribution unit 130 is inserted into the first to fourth module receivers 115a, 115b, 115c, and 115d of the chamber cover 115, and overlaps The substrate holder 120 is partially faced in the plurality of divided spaces DS1, DS2, DS3, and DS4. The gas distributing portion 130 disperses at least one kind of gas into each of the divided spaces DS1, DS2, DS3, and DS4, and selectively activates the gas distributed into each of the divided spaces DS1, DS2, DS3, and DS4. That is, when the gas distributing portion 130 distributes different kinds of gases, that is, the first gas and the second gas into the spatially divided partition spaces DS1, DS2, DS3, and DS4, the gas distributing portion 130 activates the first gas and the second gas. At least one of the gases is then distributed to the respective divided spaces DS1, DS2, DS3 and DS4.

A portion of the facing area (or the entire reaction space) between the chamber cover 115 and the substrate holder 120 defines a division space DS. The plurality of divided spaces DS1, DS2, DS3, and DS4 are provided at regular intervals, that is, spatially separated from each other.

The first gas may be a source gas comprising a thin film material to be deposited on the substrate W. The second gas contains cerium, a titanium group element (titanium, zirconium, hafnium, etc.) and aluminum. For example, the source gas containing ruthenium may be silane (Silan ₄ ), disilane (Si ₂ H ₆ ), trisilane (Si ₃ H ₈ ), tetraethoxy decane TEOS (Tetraethylorthosilicate; Si ( OC ₂ H ₅ ) ₄ ), Dichlorosilane (DCS), Hexachlorosilane (Si ₂ Cl ₆ ), Tri-dimethylaminosilane (Tri (CH ₃ )) ₂ N) ₃ SiH), trisylamine TSA (Trisilylamine; N(SiH ₃ ) ₃ ), and the like.

The second gas may be a reactance gas, react with the source gas described above, and deposit a thin film material of the source gas on the substrate W. For example, the reactance gas is at least any one selected from the group consisting of nitrogen (nitrogen; N2), oxygen (O2), nitrogen dioxide (NO2), and ozone (O3).

The gas distribution unit 130 includes first to fourth gas distribution modules 130a, 130b, 130c, and 130d. The first to fourth gas distribution modules 130a, 130b, 130c, and 130d are spatially separated from each other and inserted into the first to fourth module receivers 115a, 115b, 115c, and 115d, respectively, thereby first to first The four gas distribution modules 130a, 130b, 130c, and 130d spatially separate the first gas and the second gas supplied from the gas supply device (not shown), and supply the spatially separated gas to each of the divided spaces DS1. DS2, DS3 and DS4. At least one of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d activates the second gas, and And dispersing the activated second gas into each of the divided spaces DS1, DS2, DS3, and DS4.

The first to fourth gas distribution modules 130a, 130b, 130c, and 130d are inserted into the first to fourth module receivers 115a, 115b, 115c, and 115d of the chamber cover 115, respectively, and are opposed to the center of the substrate holder 120. The point is provided symmetrically along the X-axis in the Y-axis direction or in the diagonal direction.

The first gas distribution module 130a is inserted into the first module receiver 115a to overlap the first divided space DS1 defined locally on the substrate holder 120. When the first gas distribution module 130a allocates the spatially separated first gas and the second gas into the first divided space DS1, the first gas distribution module 130a activates the second gas, and distributes the activated second gas to the first A segmentation space within DS1. In this case, the second gas is activated by plasma, microwave, heat source or laser. For the following description of the invention, it is assumed that the second gas is activated by the plasma.

The first gas distribution module 130a includes a bracket frame 131, a cover plate 132, and first and second gas distribution plates 133 and 134.

The bracket frame 131 is formed to include first and second gas distribution spaces S1 and S2, and the bracket frame 131 supports the cover plate 132 and the first and second gas distribution plates 133 and 134. The holder frame 131 is formed of an insulating material (for example, a ceramic material) such that the cap plate 132 is electrically insulated from the gas distribution plates 133 and 134. The bracket frame 131 is inserted into the first module receiver 115a or is provided on the upper surface of the chamber cover 115 and overlaps with the first module receiver 115. Therefore, the bracket The lower surface of the frame 131 is at the same height as the lower surface of the chamber cover 115, or the lower surface of the holder frame 131 protrudes toward the lower surface of the chamber cover 115 in the direction of the substrate holder 120.

The bracket frame 131 includes an upper surface 131a, a side wall 131b, a lower surface 131c, and a partition wall 131d, wherein the upper surface 131a is for supporting the cover plate 132; the side wall 131b is vertically bent from the upper surface 131a to provide the first and second gas distribution spaces S1 and S2; a lower surface 131c for supporting the first and second gas distribution plates 133 and 134, wherein the lower surface 131c is bent from a lower side of the side wall 131b to provide first and second openings; the partition wall 131d has a predetermined height from below The surface 131c protrudes and connects the cap plate 132 to spatially separate the first gas distribution space S1 from the second gas distribution space S2.

The first and second gas distribution spaces S1 and S2 are each defined through the side wall 131b of the bracket frame 131, and are spatially separated by the partition wall 131d. The first and second gas distribution spaces S1 and S2 each have the same size or a different size. In this case, the size of the first gas distribution space S1 may be smaller or larger than the size of the second gas distribution space S2.

A cover plate 132 formed in a plate shape covers the upper surface of the above-described support frame 131. In this case, the cover plate 132 is combined with the upper surface 131a of the support frame 131 and the upper surface of the partition wall 131d by using a coupling member such as a screw or a bolt. The cover plate 132 is electrically connected to the chamber cover 115 and electrically grounded; or the cover plate 132 is electrically grounded through an additional ground strap (not shown), whereby the cover plate 132 serves as a ground electrode, and each of the cover plates 132 One and second Gas distribution plates 133 are opposite to 134.

The cover plate 132 further includes a first gas supply hole 131e and a second gas supply hole 131f, wherein the first gas supply hole 131e communicates with the first gas distribution space S1, and the second gas supply hole 131f communicates with the second gas distribution space S2.

The first gas distribution space S1 is connected to a gas supply device (not shown) through the first gas supply pipe 142 provided in the cap plate 132, whereby the first gas distribution space S1 communicates with the first gas supply hole 131e. Therefore, the first gas G1 is diffused in the first gas distribution space S1 and then supplied to the first gas distribution plate 133.

The second gas distribution space S2 is connected to the gas supply means (not shown) through the second gas supply pipe 144 provided in the cap plate 132, whereby the second gas distribution space S2 communicates with the second gas supply hole 131f. Therefore, the second gas G2 is diffused in the second gas distribution space S2 and then supplied to the second gas distribution plate 134.

The first gas distribution space S1 supplies the first gas G1, and the first gas distribution plate 133 distributes the first gas G1 downward toward a region of the first divided space DS1.

The first gas distribution plate 133 overlaps with the first opening prepared in the lower surface 131c of the support frame 131, and the lower surface 131c of the support frame 131 supports the first gas distribution plate 133. Therefore, in the case where the first gas distribution space S1 is provided between the first gas distribution plate 133 and the cover plate 132, the first gas The upper surface of the body distribution plate 133 faces the lower surface of the cover plate 132. Further, the lower surface of the first gas distribution plate 133 partially faces the upper surface of the substrate holder 120, corresponding to one region of the first divided region DS1.

The first gas distribution plate 133 includes a plurality of first gas distribution holes 133h, and the plurality of first gas distribution holes 133h are provided at a fixed interval and communicate with the first gas distribution space S1 in common. The first gas distribution space S1 supplies the first gas G1, and the first gas distribution plate 133 distributes the first gas G1 downward toward a region of the first divided space DS1 through the plurality of first gas distribution holes 133h.

The second gas distribution plate 134 includes a second area that is the same as or different from the first area of the first gas distribution plate 133. The second gas distribution plate 134 is inserted into the second gas distribution space S2 of the support frame 131. In this case, the second area of the second gas distribution plate 134 is smaller or larger than the first area of the first gas distribution plate 133. The second gas distribution plate 134 activates the second gas G2 supplied to the second gas distribution space S2, and distributes the activated second gas G2 downward to another region of the first divided space DS1.

The second gas distribution plate 134 overlaps with the second opening prepared in the lower surface 131c of the support frame 131, and the lower surface 131c of the support frame 131 supports the second gas distribution plate 134. Therefore, under the condition that the second gas distribution space S2 is provided between the second gas distribution plate 134 and the cap plate 132, the upper surface of the second gas distribution plate 134 faces the lower surface of the cap plate 132. In addition, the lower surface of the second gas distribution plate 134 partially faces the upper surface of the substrate holder 120, corresponding to the first point Cut another area of space DS1.

The second gas distribution plate 134 includes a plurality of second gas distribution holes 134h, and the plurality of second gas distribution holes 134h are provided at fixed intervals and communicate with the second gas distribution space S2 in common. The second gas distribution plate 134 is electrically connected to the power supply device 150 through a feeder cable 152. The second gas distribution plate 134 functions as a plasma electrode for forming a plasma in the second gas distribution space S2 in accordance with the plasma power supplied from the power supply unit 150 through the feeder cable 152.

The power supply device 150 generates plasma power having a predetermined frequency, and supplies the plasma power to the second gas distribution plate 134 through the feeder cable 152, thereby forming plasma in the second gas distribution space S2. Therefore, the second gas G2 becomes plasma and is activated by the plasma formed in the second gas distribution space S2. Then, the plasma-activated second gas PG2 is spatially separated from the first gas G1 distributed into the first gas distribution space S1, and then distributed downward to the substrate W through the plurality of second gas distribution holes 134h. The distributed second gas PG2 reacts with the first gas G1 distributed onto the substrate W, thereby depositing a predetermined thin film material on the substrate W.

The plasma power may be a high frequency electric power having a frequency of 3 MHz to 30 MHz, or may be an ultra high frequency electric power having a frequency of 30 MHz to 300 MHz.

Feeder cable 152 is coupled to impedance matching circuit 154. The impedance matching circuit 154 matches the source impedance and the load impedance of the plasma power supplied from the power supply device 150 with the second gas distribution plate 134. Impedance The matching circuit 154 includes at least two of the impedance elements (not shown) formed by at least one of the variable capacitance and the variable inductance.

The first gas distribution module 130a spatially separates the first gas G1 and the second gas G2 different from each other, and then distributes the separated first gas G1 and second gas G2 downward into the first divided space DS1. In this case, according to the plasma power supplied to the second gas distribution plate 134, the plasma formed by the second gas G2 passing through the second gas distribution space S2 is activated and then distributed downward into the first divided space DS1.

Referring again to FIG. 2, the second gas distribution module 130b is inserted into the second module receiver 115b to overlap the second divided space DS2 defined locally on the substrate holder 120. The second gas distribution module 130b spatially separates the first gas G1 and the second gas G2 different from each other, and then distributes the separated first gas G1 and second gas G2 downward into the second divided space DS2. In this case, the second gas G2 is activated and distributed into the second divided space DS2. The second gas distribution module 130b is identical in structure to the first gas distribution module 130a shown in FIG. 3, thereby omitting a detailed explanation of the structure of the second gas distribution module 130b. The second gas distribution module 130b distributes the first gas G1 to a region of the second divided space DS2 through the first gas distribution space S1, and activates the second gas G2 by using the plasma formed in the second gas distribution space S2. And distributing the second gas G2 activated and spaced apart from the first gas G1 to another region of the second gas distribution space S2 downward.

The third gas distribution module 130c is inserted into the third module receiver In the 115c, it overlaps with the locally defined third divided space DS3 on the substrate holder 120. The third gas distribution module 130c spatially separates the first gas G1 and the second gas G2 different from each other, and then distributes the separated first gas G1 and second gas G2 downward into the third divided space DS3. In this case, the second gas G2 is activated and distributed into the third divided space DS3. The third gas distribution module 130c is identical in structure to the first gas distribution module 130a shown in FIG. 3, thereby omitting a detailed explanation of the structure of the third gas distribution module 130c. The third gas distribution module 130c distributes the first gas G1 to a region of the third divided space DS3 through the first gas distribution space S1, and activates the second gas G2 by using the plasma formed in the second gas distribution space S2. And distributing the second gas G2 activated to be spatially separated from the first gas G1 to another region of the third divided space DS3.

The fourth gas distribution module 130d is inserted into the fourth module receiver 115d and overlaps with the fourth divided space DS4 defined locally on the substrate holder 120. The fourth gas distribution module 130d spatially separates the first gas G1 and the second gas G2 different from each other, and then distributes the separated first gas G1 and second gas G2 downward into the fourth divided space DS4. In this case, the second gas G2 is activated and distributed into the fourth divided space DS4. The fourth gas distribution module 130d is identical in structure to the first gas distribution module 130a shown in FIG. 3, thereby omitting a detailed explanation of the structure of the fourth gas distribution module 130d. The fourth gas distribution module 130d distributes the first gas G1 to an area of the fourth divided space DS4 through the first gas distribution space S1. The plasma formed in the two gas distribution spaces S2 activates the second gas G2, and distributes the second gas G2 activated to be spatially separated from the first gas G1 to another region of the fourth divided space DS4.

In each of the second gas distribution spaces S2 of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d that are spatially divided on the substrate holder 120, the substrate processing apparatus 100 of the first embodiment of the present invention forms a plasma, and The plasma-activated second gas PG2 is dispensed onto the substrate W, thereby preventing the plasma from damaging the substrate W.

In addition, the substrate processing apparatus 100 of the first embodiment of the present invention is capable of distributing the first gas G1 and the second gas to the substrate holder 120, and the substrate holder 120 is rotated and transmitted through the first to fourth gas distribution modules 130a, 130b. The spaces 130c and 130d are spaced apart such that the uniformity of the film deposited on the substrate W can be improved to facilitate control of the quality of the film and by minimizing the thickness of the film material deposited in the process chamber 110 to avoid particles.

"Fig. 4A" shows a substrate processing method using the substrate processing apparatus of the first embodiment of the present invention described above. "Fig. 4B" is a waveform diagram of the operation sequence in the first to fourth gas distribution modules.

First, the plurality of substrates W are loaded and placed on the substrate holder 120 at regular intervals.

Then, the substrate holder 120 on which the plurality of substrates W are loaded and placed is rotated to a predetermined direction.

Thereafter, the first gas G1 and the activated second gas PG2 are in contact with each other The partitions are distributed downward into the respective divided spaces DS1, DS2, DS3, and DS4 through the first to fourth gas distribution modules 130a, 130b, 130c, and 130d.

In more detail, the first gas G1 is supplied to each of the first gas distribution spaces S1 of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, whereby the first gas G1 is distributed downward to each divided space. One area of each of DS1, DS2, DS3, and DS4. At the same time, the second gas G2 is supplied to each of the second gas distribution spaces S2 of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d. Plasma is formed in each of the second gas distribution spaces S2 by supplying the plasma power to the second gas distribution plates 134 of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, whereby the second gas G2 Activated, the activated second gas PG2 is distributed downward to another area of each of the divided spaces DS1, DS2, DS3, and DS4.

Therefore, the plurality of substrates W placed on the substrate holder 120 sequentially pass through the respective divided spaces DS1, DS2, DS3, and DS4 in accordance with the rotation of the substrate holder 120, thereby transmitting between the first gas G1 and the activated second gas PG2. The reaction deposits a predetermined film material on each of the substrates W.

In the case of the above substrate processing apparatus and substrate processing method, the first gas G1 and the activated second gas PG2 may be simultaneously distributed through the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, but are not necessarily required in this way. The order of distribution of the first gas G1 and the activated second gas PG2 may be in accordance with the processing order according to the control of the control module (not shown). change.

"5A", "5B", and "5C" are waveform diagrams of various modified examples of the substrate processing methods of the first to fourth gas distribution modules shown in "Fig. 2". .

According to the substrate processing method of the first modified example, as shown in FIG. 5A, the first gas G1 and the activated second gas PG2 may be transmitted through the first to fourth gas distribution modules 130a, 130b, 130c, and 130d. Alternately allocated to each of the divided spaces DS1, DS2, DS3, and DS4. The substrate processing method of the first modified example will be described in detail below.

First, the first gas G1 is supplied into the first gas distribution space S1 of each of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, and then the first gas G1 is distributed downward to each divided space. One area of each of DS1, DS2, DS3, and DS4.

After the supply of the first gas G1 described above is stopped, the second gas G2 is supplied to the second gas distribution space S2 of each of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, and the plasma power is supplied to a second gas distribution plate 134 of each of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, thereby forming a plasma in the second gas distribution space S2, and thereby dispensing the activated portion downward The two gases PG2 are applied to another region of each of the divided spaces DS1, DS2, DS3, and DS4.

In the substrate processing method of the first modified example, the distribution process of the first gas G1 and the distribution process of the activated second gas PG2 are alternately performed. In this manner, a film is deposited on each of the substrates W placed on the rotating substrate holder 120.

According to the substrate processing method of the second modified example, as shown in FIG. 5B, the first gas G1 is continuously supplied to the respective divided spaces DS1, DS2 through the first to fourth gas distribution modules 130a, 130b, 130c, and 130d. An area of each of DS3 and DS4; through the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, the activated second gas PG2 is distributed to each of the divided spaces DS1, DS2 every predetermined period. Another area for each of DS3 and DS4. The substrate processing method of the second modified example will be described in detail below.

First, the first gas G1 is supplied into the first gas distribution space S1 of each of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, and then the first gas G1 is continuously assigned to each division. One area of each of the spaces DS1, DS2, DS3, and DS4.

The second gas G2 is supplied to the second gas of each of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d every predetermined period under the condition that the above process of the first gas G1 is continuously and without interruption. The distribution space S2, the plasma power is supplied to the second gas distribution plate 134 of each of the first to fourth gas distribution modules 130a, 130b, 130c, and 130d, thereby forming a plasma in the second gas distribution space S2. Thereby, the activated second gas PG2 is distributed downward to another region of each of the divided spaces DS1, DS2, DS3, and DS4 every predetermined period.

In the substrate processing method of the second modification example, the dispensing process of the first gas G1 is continuously performed without stopping, and the dispensing process of the activated second gas PG2 is performed every predetermined period. Thus, a film is deposited on each of the substrates W placed on the rotating substrate holder 120.

Meanwhile, in the case of the above-described substrate processing method of the second modified example, the dispensing process of the first gas G1 is continuously performed without stopping, and the dispensing process of the activated second gas PG2 is executed every predetermined period, but this need not be the case. Alternatively, the dispensing process of the activated second gas PG2 may be continuously performed without stopping, and the dispensing process of the first gas G1 may be repeatedly performed every predetermined period.

According to the substrate processing method of the third modified example, as shown in FIG. 5C, the first gas G1 and the activated second gas PG2 are sequentially transmitted through the first to fourth gas distribution modules 130a, 130b, 130c, and 130d. The first to fourth gas distribution modules 130a, 130b, 130c, and 130d are sequentially operated in the respective divided spaces DS1, DS2, DS3, and DS4. The substrate processing method of the third modified example will be described in detail below.

First, the first gas G1 is supplied to the first gas distribution space S1 of the first gas distribution module 130a, and then the first gas G1 is distributed downward to an area of the first divided space DS1.

After the supply of the first gas G1 through the first gas distribution space S1 of the first gas distribution module 130a, the second gas G2 is supplied to the second gas distribution space S2 of the first gas distribution module 130a, and the plasma power is The second gas distribution plate 134 is supplied to the first gas distribution module 130a to form a plasma in the second gas distribution space S2 of the first gas distribution module 130a, thereby distributing the activated second gas PG2 downward. Go to another area of the first divided space DS1. At the same time, the first gas G1 is supplied to the first gas distribution space S1 of the second gas distribution module 130b such that the first gas G1 is distributed downward to an area of the second divided space DS2.

Then, the process of distributing the activated second gas PG2 through the second gas distribution space S2 of the first gas distribution module 130a and the distribution of the first gas G1 through the first gas distribution space S1 of the second gas distribution module 130b are stopped. After the process, the second gas G2 is supplied to the second gas distribution space S2 of the second gas distribution module 130b, and the plasma power is supplied to the second gas distribution plate 134 of the second gas distribution module 130b, thereby A plasma is formed in the second gas distribution space S2 of the second gas distribution module 130b, thereby distributing the activated second gas PG2 downward to another region of the second divided space DS2. At the same time, the first gas G1 is supplied to the first gas distribution space S1 of the third gas distribution module 130c such that the first gas G1 is distributed downward to an area of the third divided space DS3.

Then, the process of distributing the activated second gas PG2 through the second gas distribution space S2 of the second gas distribution module 130b and the distribution of the first gas G1 through the first gas distribution space S1 of the third gas distribution module 130c are stopped. After the process, the second gas G2 is supplied to the second gas distribution space S2 of the third gas distribution module 130c, and the plasma power is supplied to the third gas component. The second gas distribution plate 134 of the module 130c is configured to form a plasma in the second gas distribution space S2 of the third gas distribution module 130c, thereby distributing the activated second gas PG2 downward to the third divided space. On another area of DS3. At the same time, the first gas G1 is supplied to the first gas distribution space S1 of the fourth gas distribution module 130d, so that the first gas G1 is distributed downward to an area of the fourth divided space DS4.

Then, the process of distributing the activated second gas PG2 through the second gas distribution space S2 of the third gas distribution module 130c and the distribution of the first gas G1 through the first gas distribution space S1 of the fourth gas distribution module 130d are stopped. After the process, the second gas PG2 is supplied to the second gas distribution space S2 of the fourth gas distribution module 130d, and the plasma power is supplied to the second gas distribution plate 134 of the fourth gas distribution module 130d, thereby A plasma is formed in the second gas distribution space S2 of the four gas distribution module 130d, thereby distributing the activated second gas PG2 downward to another region of the fourth divided space DS4. At the same time, the first gas G1 is supplied to the first gas distribution space S1 of the first gas distribution module 130a such that the first gas G1 is distributed downward to an area of the first divided space DS1.

The above process is repeated such that a film is deposited on each of the substrates W placed on the rotating substrate holder 120.

In the substrate processing method of the third modified example, the first gas G1 and the activated second gas PG2 are sequentially distributed to the respective divided spaces DS1, DS2, and DS3 through the respective gas distribution modules 130a, 130b, 130c, and 130d. And in the DS4, each of the gas distribution modules 130a, 130b, 130c, and 130d operates in sequence, thereby depositing a thin film on each of the substrates W placed on the rotating substrate holder 120.

Fig. 6 is a cross-sectional view showing a modified embodiment of a plurality of gas distribution modules shown in Fig. 2.

Please refer to "FIG. 6" in conjunction with "FIG. 2". The first gas distribution module 130a of the modified embodiment includes a bracket frame 135, a partition wall 135d, first and second covers 136 and 137, an insulating component 138, and a One and second gas distribution plates 139a and 139b.

The bracket frame 135 is formed to include first and second gas distribution spaces S1 and S2, the bracket frame 135 supports the cover plates 136 and 137, and the gas distribution plates 139a and 139b. The bracket frame 135 is formed of a metal material, whereby the bracket frame 135 is electrically connected to the chamber cover 115. In this case, the holder frame 135 is inserted into the first module receiver 115a or is provided on the upper surface of the chamber cover and overlaps the first module receiver 115a. Therefore, the lower surface of the bracket frame 135 is at the same height as the lower surface of the chamber cover 115, or protrudes from the lower surface of the chamber cover 115 toward the substrate holder 120.

The bracket frame 135 includes an upper surface 135a for supporting the cover plates 136 and 137, and a lower surface 135c for vertically supporting the first and second gas distribution spaces S1 and S2. The lower surface 135c is for supporting the first and second gas distribution plates 139a and 139b, wherein the lower surface 135c is bent from the lower side of the side wall 135b so that Provide an opening.

The partition wall 135d is formed of an insulating material (for example, a ceramic material). The partition wall 135d is vertically formed at the center of the support frame 135, wherein the partition wall 135d defines a first gas distribution space S1 and a second gas distribution space S2 inside the bracket frame 135, and also spatially separates the first gas distribution space S1 and the second Gas distribution space S2. Further, the partition wall 135d supports the first and second cover plates 136 and 137, and the first and second gas distribution plates 139a and 139b.

Each of the first gas distribution space S1 and the second gas distribution space S2 is defined by the side wall 135b of the support frame 135, and is spatially separated by the partition wall 135d. Each of the first gas distribution spaces S1 and the second gas distribution space S2 have the same size or different sizes. In this case, the size of the first gas distribution space S1 is smaller or larger than the size of the second gas distribution space S2.

The first cover plate 136 is formed in a plate shape having a first area, wherein the first cover plate 136 covers the first gas distribution space S1 defined by the support frame 135 described above. In this case, the first cover 136 is combined with the upper surface 135a of the support frame 135 and the partition wall 135d by a coupling member such as a screw or a bolt. The first cover 136 is electrically floating.

The first cover plate 136 further includes a first gas supply hole 136h communicating with the first gas distribution space S1.

The first gas distribution space S1 is connected to the gas supply device (not shown) through the first gas supply pipe 142 provided in the first cover plate 136, This first gas distribution space S1 communicates with the first gas supply hole 136h. Therefore, the first gas G1 is diffused in the first gas distribution space S1 and then supplied to the first gas distribution plate 139a.

The second cover plate 137 is formed in a plate shape having a second area, and the second area is the same as or different from the first area. The second cover plate 137 covers the second gas distribution space S2 defined in the support frame 135 such that the second cover plate 137 is electrically insulated from the first cover plate 136 through the partition wall 135d. In this case, the second cover 137 is combined with the upper surface 135a of the bracket frame 135 and the partition wall 135d by a coupling assembly such as a screw or a bolt. The second cover 137 is electrically connected to the above power supply device through the feeder cable 152, and is supplied with the above-described plasma power from the power supply device.

The second cover plate 137 further includes a second gas supply hole 137h communicating with the second gas distribution space S2.

The second gas distribution space S2 is connected to the gas supply device (not shown) through the second gas supply pipe 144 provided in the second cover plate 137, whereby the second gas distribution space S2 communicates with the second gas supply hole 137h. Therefore, the second gas G2 is diffused in the second gas distribution space S2 and then supplied to the second gas distribution plate 139b.

In the meantime, the feeder cable 152 can be electrically connected to the second cover plate 137 through the second gas supply pipe 144 instead of directly connecting the second cover plate 137.

The insulating component 138 is provided between the first cover 136 and the bracket frame 135, and is also provided between the second cover 137 and the bracket frame 135, The first and second covers 136 and 137 are electrically insulated from the frame 135. The insulating assembly 138 is provided between each of the first and second cover plates 136 and 137 and the bracket frame 135 using a coupling assembly such as a screw or a bolt.

The first gas distribution plate 139a having the first area is inserted into the first gas distribution space S1 of the holder frame 135. The first gas distribution plate 139a distributes the first gas G1 downward toward a region of the first divided region DS1, wherein the first gas G1 is supplied from the first gas distribution space S1.

The first gas distribution plate 139a is supported by a lower surface 135c of the holder frame 135 and the partition wall 135d, and overlaps with a region of the first divided space DS1. Therefore, under the condition that the first gas distribution space S1 is provided between the first gas distribution plate 139a and the first cover plate 136, the upper surface of the first gas distribution plate 139a faces the lower surface of the first cover plate. Further, the lower surface of the first gas distribution plate 139a partially faces the upper surface of the substrate holder 120, corresponding to one region of the first divided space DS1.

The first gas distribution plate 139a includes a plurality of first gas distribution holes 139h1 that are provided in accordance with a fixed interval and that communicate with the first gas distribution space S1 in common. The first gas distribution plate 139a distributes the first gas G1 downward through a plurality of first gas distribution holes 139h1 toward a region of the first divided space DS1, wherein the first gas G1 is supplied from the first gas distribution space S1.

The second gas distribution plate 139b has a second area that is the same as or different from the first area of the first gas distribution plate 139a. The second gas distribution plate 139b is inserted into the second gas distribution space S2 of the holder frame 135. second The gas distribution plate 139b activates the second gas G2 supplied to the second gas distribution space S2, and distributes the activated second gas PG2 downward to another region of the first divided space DS1.

The second gas distribution plate 139b is supported by the other lower surface 135c of the holder frame 135 and overlaps with another area of the first divided area DS1. Therefore, under the condition that the second gas distribution space S2 is provided between the second gas distribution plate 139b and the second cover plate 137, the upper surface of the second gas distribution plate 139b faces the lower surface of the second cover plate 137. Further, the lower surface of the second gas distribution plate 139b partially faces the upper surface of the substrate holder 120, corresponding to another region of the first divided space DS1.

The second gas distribution plate 139b includes a plurality of second gas distribution holes 139h2 that are provided in accordance with a fixed interval and that communicate with the second gas distribution space S2 in common. The second gas distribution plate 139b is connected to the chamber cover 115 through the holder frame 135, whereby the second gas distribution plate 139b is electrically grounded. Therefore, the second gas distribution plate 139b serves as a ground electrode for forming plasma in the second gas distribution space S2, opposed to the second cover plate 137 to which the plasma power is supplied. In the meantime, the second gas distribution plate 139b is directly connected to the ground power source through a grounding tab (not shown).

According to a modified embodiment of the present invention, the first gas distribution module 130a spatially separates the first gas G1 and the second gas G2 different from each other, and then distributes the separated first gas G1 and second gas G2 downward to the first Split space in DS1. In this case, according to the plasma supplied to the second cover 137 The power, the second gas G2 is activated by the plasma formed in the second gas distribution space S2, and then distributed downward into the first divided space DS1.

The second gas distribution module 130b is inserted into the second module receiver 115b to overlap the second divided space DS2 defined locally on the substrate holder 120. The second gas distribution module 130b spatially separates the first gas G1 and the second gas G2 different from each other, and then distributes the separated first gas G1 and second gas G2 downward into the second divided space DS2. In this case, the second gas G2 is activated and distributed into the second divided space DS2. The second gas distribution module 130b is identical in structure to the first gas distribution module 130a shown in FIG. 6, thereby omitting a detailed description of the structure of the second gas distribution module 130b. The second gas distribution module 130b distributes the first gas G1 to a region of the second divided space DS2 through the first gas distribution space S1, and activates the second gas G2 by using the plasma formed in the second gas distribution space S2. The second gas G2 is distributed downward to another region of the second divided space DS2, wherein the second gas G2 is activated and spatially separated from the first gas G1.

The third gas distribution module 130c is inserted into the third module receiver 115c to overlap with the locally defined third divided space DS3 on the substrate holder 120. The third gas distribution module 130c spatially separates the first gas G1 and the second gas G2 different from each other, and then distributes the separated first gas G1 and second gas G2 downward into the third divided space DS3. In this case, the second gas G2 is activated and distributed into the third divided space DS3. The third gas distribution module 130c is structurally identical to the first gas distribution module shown in FIG. 130a is the same, thereby omitting a detailed description of the structure of the third gas distribution module 130c. The third gas distribution module 130c distributes the first gas G1 to a region of the third divided space DS3 through the first gas distribution space S1, and activates the second gas G2 by using the plasma formed in the second gas distribution space S2. The second gas G2 is distributed downward to another region of the third divided space DS3, wherein the second gas G2 is activated and spatially separated from the first gas G1.

The fourth gas distribution module 130d is inserted into the fourth module receiver 115d and overlaps with the fourth divided space DS4 defined locally on the substrate holder 120. The fourth gas distribution module 130d spatially separates the first gas G1 and the second gas G2 different from each other, and then distributes the separated first gas G1 and second gas G2 downward into the fourth divided space DS4. In this case, the second gas G2 is activated and distributed into the fourth divided space DS4. The fourth gas distribution module 130d is identical in structure to the first gas distribution module 130a shown in FIG. 6, thereby omitting a detailed description of the structure of the fourth gas distribution module 130d. The fourth gas distribution module 130d distributes the first gas G1 to a region of the fourth divided space DS4 through the first gas distribution space S1, and activates the second gas G2 by using the plasma formed in the second gas distribution space S2. And distributing the second gas G2 downward to another region of the fourth divided space DS4, wherein the second gas G2 is activated and spatially separated from the first gas G1.

A substrate processing method using a substrate processing apparatus having a plurality of gas distribution modules according to the modified embodiment of the present invention and "4A", except that the plasma power for activating the second gas G2 is supplied to the second cover 137 The substrate processing methods described in the drawings, "4B," "5A," "5B," and "5C" are the same, and the detailed explanation of the substrate processing method is omitted.

As described above, in the case of the substrate processing apparatus of the first embodiment of the present invention and the substrate processing method using the substrate processing apparatus, only the second gas G2 is activated and then distributed into each divided space. However, the first gas can be activated and the activated first gas can be distributed to each of the divided spaces. In this case, the first gas is activated by plasma, microwave, heat source or laser. For the following description of the invention, it is assumed that the first gas is activated by the plasma.

Fig. 7 is a cross-sectional view showing a plurality of gas distribution modules in the substrate processing apparatus of the second embodiment of the present invention.

Please refer to "Fig. 2" in conjunction with "Fig. 7", except that the first gas G1 supplied to the first gas distribution space S1 is activated, and then distributed to one of each of the divided spaces DS1, DS2, DS3 and DS4. The substrate of the second embodiment of the present invention is activated, and the second gas G2 supplied to the second gas distribution space S2 is activated and then distributed to another region of each of the divided spaces DS1, DS2, DS3 and DS4 Each of the gas distribution modules 130a, 130b, 130c, and 130d of the processing apparatus has the same structure as the gas distribution modules 130a, 130b, 130c, and 130d shown in FIG. 3, and thus only describes the first gas G1 for activation. Structure.

In order to activate the first gas G1, the first gas distribution plate 133 of each gas distribution module 130a, 130b, 130c, and 130d passes through the feeder The cable 162 is electrically connected to the power supply unit 160. The feeder cable 162 is connected to the impedance matching circuit 164 described above. The impedance matching circuit 164 matches the power source impedance and the load impedance of the plasma power supplied from the power supply device 160 with the first gas distribution plate 133.

The first gas distribution plate 133 connected to the power supply device 160 faces the cover plate 132 under the condition that the first gas distribution space S1 is provided between the first gas distribution plate 133 and the cover plate 132. Therefore, the first gas distribution plate 133 functions as a plasma electrode for forming a plasma in the first gas distribution space S1 in accordance with the plasma power. Therefore, each of the gas distribution modules 130a, 130b, 130c, and 130d generates plasma in the first gas distribution space S1 by the plasma power supplied to the first gas distribution plate 133 by the power supply device 160, thereby activating the first gas G1, thus The activated first gas PG1 is distributed into one of the divided spaces DS1, DS2, DS3 and DS4.

Figure 8 is a cross-sectional view showing a plurality of gas distribution modules in a substrate processing apparatus according to a third embodiment of the present invention.

Please refer to "Fig. 2" in conjunction with "Fig. 8", except that the first gas G1 supplied to the first gas distribution space S1 is activated, and then distributed to one of each divided space DS1, DS2, DS3 and DS4. The substrate of the third embodiment of the present invention is activated, and the second gas G2 supplied to the second gas distribution space S2 is activated and then distributed to another region of each of the divided spaces DS1, DS2, DS3 and DS4. Each of the gas distribution modules 130a, 130b, 130c, and 130d of the processing apparatus has the same structure as the gas distribution modules 130a, 130b, 130c, and 130d shown in FIG. The structure for activating the first gas G1 is described.

In order to activate the first gas G1, the first cover 136 of each of the gas distribution modules 130a, 130b, 130c, and 130d is electrically connected to the power supply unit 160 through the feeder cable 162. The feeder cable 162 is connected to the impedance matching circuit 164 described above. The impedance matching circuit 164 matches the power source impedance and the load impedance of the plasma power supplied from the power supply device 160 with the first cover 136.

Under the condition that the first gas distribution space S1 is provided between the first cover plate 136 and the first gas distribution plate 139a, the first cover plate 136 that connects the power supply device 160 faces the first gas distribution plate 139a. Therefore, the first cover plate 136 functions as a plasma electrode for forming a plasma in the first gas distribution space S1 in accordance with the plasma power. Therefore, with the plasma power supplied to the first cover 136 by the power supply device 160, each of the gas distribution modules 130a, 130b, 130c, and 130d forms a plasma in the first gas distribution space S1, thereby activating the first gas G1, This distributes the activated first gas PG1 into one of each of the divided spaces DS1, DS2, DS3 and DS4.

The activated first gas PG1 and the activated second gas PG2 are spatially separated, and are distributed to the rotating substrate holder 120, except that the first gas G1 and the second gas G2 are separately activated by the plasma. The substrate processing method of the substrate processing apparatus according to the second embodiment and the substrate processing method described in "4A", "4B", "5A", "5B", and "5C" The same is omitted, thereby omitting a detailed explanation of the substrate processing method.

As described above, in the case of the substrate processing apparatus of the second and third embodiments of the present invention and the substrate processing method using the substrate processing apparatus, the first gas distribution in each of the gas distribution modules 130a, 130b, 130c, and 130d is transmitted. A plasma is formed in each of the space S1 and the second gas distribution space S2, the first gas G1 and the second gas G2 are separately activated, and the activated first gas PG1 and the activated second gas PG2 are spatially separated, And being dispensed onto the rotating substrate holder 120, this improves the uniformity of the film deposited on the substrate W, in order to control the quality of the film, and to avoid particles by minimizing the thickness of the film material deposited in the process chamber 110.

Table 1 shows various examples of the operation of each gas distribution module of the control mode of the control module in the substrate processing apparatus and method according to the first to third embodiments of the present invention.

Only the operations of the gas distribution modules 130a, 130b, 130c, and 130d according to the control mode of the control module will be described below.

The control mode 1 individually activates the first gas G1 and the second gas G2 through the respective gas distribution modules 130a, 130b, 130c, and 130d, and distributes the separately activated first gas PG1 and second gas PG2. In this case, the plasma activates the first gas G1 and the second gas G2. In the case of the control mode 1, each of the gas distribution modules 130a, 130b, 130c, and 130d has the same structure as the gas distribution module shown in "Fig. 7" or "Fig. 8".

In the case of the control mode 2, when the inert gas first gas G1 is distributed through the respective gas distribution modules 130a, 130b, 130c, and 130d, the second gas G2 is activated and distributed. In this case, the second gas G2 is activated through the plasma. In the case of control mode 2, each gas distribution mode The groups 130a, 130b, 130c, and 130d have the same structure as the gas distribution module shown in "Fig. 3" or "Fig. 6". Meanwhile, in the case of the control mode 2, each of the gas distribution modules 130a, 130b, 130c, and 130d can be realized by removing the power supply device 160 from the structure of "Fig. 7" or "Fig. 8", or according to the control mode. The manner in which the group's control power supply unit 160 does not operate is provided.

The control mode 3 separately activates the first gas G1 and the second gas G2 through the first and third gas distribution modules 130a and 130c, and distributes the activated first gas PG1 and the second gas PG2; and transmits the second gas distribution module 130b. Only the first gas G1 is activated, and the activated first gas PG1 is dispensed; and only the second gas PG2 is activated through the fourth gas distribution module 130d, and the activated second gas PG2 is dispensed. In this case, the first gas G1 and the second gas G2 are activated by the plasma. In the case of the control mode 3, each of the gas distribution modules 130a, 130b, 130c, and 130d has the same structure as the gas distribution module shown in "Fig. 7" or "Fig. 8". However, according to the control of the control module, the second gas distribution module 130b activates only the first gas G1 and the activated first gas PG1; and according to the control of the control module, the fourth gas distribution module 130d only activates the first The second gas G2, and the activated second gas PG2.

Meanwhile, in the case of the control mode 3, the second gas distribution module 130b does not distribute the second gas G2 but distributes the activated first gas PG1, that is, the second gas distribution module 130b is only used for activation and distribution. Gas G1. For example, by removing the structure from "Structure 7" or "Figure 8" The second gas distribution space S2 may be obtained by the second gas distribution module 130b, or the second gas distribution module 130b may be formed to supply the first gas G1 to the second gas distribution space S2.

Similarly, in the case of the control mode 3, the fourth gas distribution module 130d does not distribute the first gas G1 but distributes the activated second gas G2, that is, the fourth gas distribution module 130d is only used for activation and distribution. Two gases G2. For example, the fourth gas distribution module 130d may be obtained by removing the first gas distribution space S1 from the structure of "Fig. 7" or "Fig. 8", or the fourth gas distribution module 130d may be formed to supply the first The second gas G2 is supplied to the first gas distribution space S1.

The control mode 4 distributes the first gas G1 in an inert state through the first and second gas distribution modules 130a and 130c, and activates and distributes the second gas G2 through the third and fourth gas distribution modules 130b and 130d. In this case, the second gas G2 is activated through the plasma. In the case of the control mode 4, each of the gas distribution modules 130a, 130b, 130c, and 130d has the same structure as the gas distribution module shown in "Fig. 3" or "Fig. 6". However, under the control of the control module, the first and third gas distribution modules 130a and 130c are only assigned the first gas G1 in an inert state, and under the control of the control module, the second and fourth gas distribution modules. 130b and 130d only activate and distribute the second gas G2.

Meanwhile, in the case of the control mode 4, the first and third gas distribution modules 130a and 130c do not distribute the second gas G2 but are assigned an inert state. The first gas G1, that is, the first and third gas distribution modules 130a and 130c are used to distribute the first gas G1 in an inert state only. For example, by removing the second gas distribution space S2 from the structure of "Fig. 3" or "Fig. 6", the first and third gas distribution modules 130a and 130c can be obtained, or in the absence of the power supply device 150. The first and third gas distribution modules 130a and 130c are formed to supply the first gas G1 to the second gas distribution space S2.

Similarly, in the case of the control mode 4, the second and fourth gas distribution modules 130b and 130d do not distribute the first gas G1, but the activated second gas G2, that is, the second and fourth gas distribution modules. 130b and 130d are only used to activate and dispense the second gas G2. For example, by removing the first gas distribution space S1 from the structure of "Fig. 3" or "Fig. 6", the second and fourth gas distribution modules 130b and 130d, or the second and fourth gas distributions can be obtained. The modules 130b and 130d are formed to supply the second gas G2 to the first gas distribution space S1 in the structure of "Fig. 7" or "Fig. 8".

In the case of control mode 5, the first gas G1 is activated and distributed through the first and third gas distribution modules 130a and 130c, and the second gas G2 is activated and distributed through the second and fourth gas distribution modules 130b and 130d. . In this case, the first gas G1 and the second gas G2 are activated by the plasma. In the case of the control mode 5, each of the gas distribution modules 130a, 130b, 130c, and 130d has the same structure as the gas distribution module shown in "Fig. 7" or "Fig. 8". However, the first and third gas distribution modules 130a and 130c only activate and distribute the first gas G1, the second and fourth gas points under the control of the control module. The distribution modules 130b and 130d activate and distribute only the second gas G2 under the control of the control module.

Meanwhile, in the case of the control mode 5, the first and third gas distribution modules 130a and 130c do not distribute the second gas G2, but distribute the activated first gas G1, that is, the first and third gas distribution modules. 130a and 130c are used to activate and distribute only the first gas G1. For example, by removing the second gas distribution space S2 from the structure of "Fig. 7" or "Fig. 8", the first and third gas distribution modules 130a and 130c, or the first and third gas distributions can be obtained. The modules 130a and 130c are formed to supply the first gas G1 to the second gas distribution space S2.

Similarly, in the case of the control mode 5, the second and fourth gas distribution modules 130b and 130d do not distribute the first gas G1, but the activated second gas G2, that is, the second and fourth gas distribution modes. Groups 130b and 130d are used to activate and dispense only the second gas G2. For example, by removing the first gas distribution space S1 from the structure of "Fig. 3" or "Fig. 6", the second and fourth gas distribution modules 130b and 130d, or the second and fourth gas distributions can be obtained. The modules 130b and 130d are formed to supply the second gas G2 to the first gas distribution space S1 of the structure of "Fig. 7" or "Fig. 8".

The control mode 6 distributes the first gas G1 and the activated second gas PG2 in an inert state through the first and third gas distribution modules 130a and 130c; and only distributes the first gas G1 in an inert state through the second gas distribution module 130b; And activating the second gas G2 through the fourth gas distribution module 130d and A live second gas PG2 is dispensed. In this case, the second gas G2 is activated through the plasma. In the case of the control mode 6, each of the gas distribution modules 130a, 130b, 130c, and 130d has the same structure as the gas distribution module shown in "Fig. 3" or "Fig. 6". However, the second gas distribution module 130b only distributes the first gas G1 in an inert state under the control of the control module, and the fourth gas distribution module 130d activates and distributes only the second gas G2 under the control of the control module.

Meanwhile, in the case of the control mode 6, the first and third gas distribution modules 130a and 130c can be obtained by removing the power supply device 160 from the configuration of "Fig. 7" or "Fig. 8", or according to the control mode. The control of the group, the power supply unit 160 does not operate, and the first and third gas distribution modules 130a and 130c can be provided in this manner.

Further, in the case of the control mode 6, the second gas distribution module 130b does not distribute the second gas G2, but distributes the first gas G1 in an inert state, that is, the second gas distribution module 130b is used to assign only the first gas. Gas G1. For example, the second gas distribution module 130b may be obtained by removing the second gas distribution space S2 from the structure of "Fig. 3" or "Fig. 6", or the second gas distribution module 130b may be used for supplying the first The gas G1 to the second gas distribution space S2 do not form the power supply devices 150 and 160 in the configuration of "Fig. 7" or "Fig. 8".

In the case of the control mode 6, the fourth gas distribution module 130d does not distribute the first gas G1 but distributes the activated second gas PG2, that is, the fourth gas distribution module 130d is used to activate and distribute only the second gas. PG2. For example, the fourth gas distribution module 130d may be obtained by removing the first gas distribution space S1 from the structure of "Fig. 3" or "Fig. 6", or the fourth gas distribution module 130d may supply the second gas G2. The first gas distribution space S1 in the structure of "Fig. 7" or "Fig. 8".

In the above control modes 1 to 6, the gas distribution modules 130a can be operated in accordance with the waveform diagrams shown in any of "4B", "5A", "5B", and "5C". 130b, 130c and 130d.

Meanwhile, the configuration and control of each of the gas distribution modules 130a, 130b, 130c, and 130d are not limited to the above control modes 1 to 6. At least one of the gas distribution modules 130a, 130b, 130c, and 130d is controlled to activate the second gas G2 and to distribute the activated second gas PG2, and the remaining gas distribution modules are controlled to dispense the first to remain in an activated state or an inert state. At least one of the gas G1 and the second gas G2.

Fig. 9 shows a substrate processing apparatus according to a fourth embodiment of the present invention. Fig. 10 is a cross-sectional view showing the second and fourth gas distribution modules shown in Fig. 9.

Referring to FIG. 9 and FIG. 10, the substrate processing apparatus 400 according to the fourth embodiment of the present invention includes a process chamber 110, a chamber cover 115, a substrate holder 120, and a gas distribution portion 130, wherein the gas distribution portion 130 The first to fourth gas distribution modules 130a, 430b, 130c, and 430d are included. The substrate processing apparatus 400 of FIG. 9 is activated and distributed except that the second and fourth gas distribution modules 430b and 430d of the gas distribution unit 130 are activated and distributed. The structure of the substrate processing apparatus 100 of the "Fig. 2" is the same, and the detailed explanation of the same components is omitted, and the same reference numerals are used to denote the same or similar components in the drawings.

The second gas distribution module 430b is inserted into the second module receiver 115b to overlap the second divided space DS2 defined locally on the substrate holder 120. The second gas distribution module 430b activates a purge gas G3 and distributes the activated purge gas to the second split space DS2. In this case, the flushing gas is activated by plasma, microwave, heat source or laser. For the following description of the invention, it is assumed that the flushing gas system is activated through the plasma.

The second gas distribution module 430b includes a support frame 431, a cover plate 432, and a flushing gas distribution plate 433.

The support frame 431 is formed to include a flushing gas distribution space S3, and the support frame 431 supports the cap plate 432 and the flushing gas distribution plate 433. The support frame 431 is formed of an insulating material (for example, a ceramic material) to electrically insulate the cover plate 432 from the flushing gas distribution plate 433. The support frame 431 is inserted into the second module receiver 115b or is provided on the upper surface of the chamber cover 115 and overlaps with the second module receiver 115b. Therefore, the lower surface of the support frame 431 is at the same height as the lower surface of the chamber cover 115, or protrudes from the lower surface of the chamber cover 115 toward the substrate holder 120.

The bracket frame 431 includes an upper surface 431a, a side wall 431b, and a lower surface 431c, wherein the upper surface 431a is for supporting the cover plate 432; the side wall 431b is vertically bent from the upper surface 431a to provide a flushing gas distribution space S3; The 431c is for supporting the flushing gas distribution plate 433, wherein the lower surface 431c is bent from the lower side of the side wall 431b to provide an opening.

The size of the flushing gas distribution space S3 is the same as or smaller than the size of the first gas distribution space S1 or the second gas distribution space S2 in the above embodiment of the present invention.

A plate-shaped cover plate 432 covers the upper surface of the above-described support frame 431. In this case, the cover plate 432 is combined with the upper surface 431a of the bracket frame 431 by a coupling assembly such as a screw or a bolt. The cover plate 432 is electrically connected to the chamber cover 115 and electrically grounded; or the cover plate 432 is electrically grounded through an additional grounding tab (not shown), whereby the cover plate 432 serves as a ground electrode, as opposed to the flushing gas distribution plate 433. .

The cover plate 432 further includes a flushing gas supply hole 431e communicating with the flushing gas distribution space S3.

The flushing gas distribution space S3 is connected to the gas supply means (not shown) through the flushing gas supply pipe 442 provided in the cap plate 432, so that the flushing gas distributing space S3 communicates with the flushing gas supply hole 431e. Therefore, the flushing gas G3 is diffused in the flushing gas distribution space S3 and then supplied to the flushing gas distribution plate 433.

The flushing gas distribution plate 433 distributes the flushing gas G3 downward to an area of the second divided space DS2, wherein the flushing gas G3 is supplied from the flushing gas distributing space S3.

The flushing gas distribution plate 433 and the lower surface 431c of the support frame 431 The openings prepared in the overlap are overlapped and supported by the lower surface 431c of the support frame 431. Therefore, under the condition that the flushing gas distribution space S3 is provided between the flushing gas distribution plate 433 and the cap plate 432, the upper surface of the flushing gas distribution plate 433 faces the lower surface of the cap plate 432. Further, the lower surface of the flushing gas distribution plate 433 partially faces the upper surface of the substrate holder 120, corresponding to one region of the second divided space DS2.

The flushing gas distribution plate 433 includes a plurality of flushing gas distributing holes 433h, and the plurality of flushing gas distributing holes 433h are provided in accordance with the fixed intervals and communicate with the flushing gas distribution space S3 in common. The flushing gas distribution plate 433 is electrically connected to the power supply device 170 through the feeder cable 172. Feeder cable 172 is coupled to impedance matching circuit 174. The impedance matching circuit 174 matches the power source impedance and the load impedance of the plasma power supplied from the power supply device 170 with the flushing gas distribution plate 433.

The fourth gas distribution module 430d is inserted into the fourth module receiver 115d to overlap with the locally defined fourth divided space DS4 on the substrate holder 120. The fourth gas distribution module 430d activates the flushing gas G3 and distributes the activated gas to the fourth divided space DS4. The fourth gas distribution module 430d has the same structure as the second gas distribution module 430b shown in FIG. 10, thereby omitting a detailed explanation of the fourth gas distribution module 430d. The fourth gas distribution module 430d forms a plasma in the flushing gas distribution space S3 to which the flushing gas G3 is supplied, activates the flushing gas G3 with the plasma, and distributes the activated flushing gas downward into the fourth divided space DS4.

Each of the above second and fourth gas distribution modules 130b and In 130d, the plasma power is supplied to the flushing gas distribution plate 433 having the flushing gas distribution hole 433h, but this need not be the case. Plasma power can be applied to the cover plate 432. In this case, the cover 432 is electrically insulated from the bracket frame 431 through an insulating member (not shown). Further, the bracket frame 431 is formed of a metal material, whereby the flushing gas distribution plate 433 is electrically grounded.

The "11th drawing" shows a substrate processing method using the substrate processing apparatus of the fourth embodiment of the present invention.

The substrate processing method using the substrate processing apparatus according to the fourth embodiment of the present invention will be described with reference to "Fig. 9" and "10th drawing" with reference to "11th drawing".

First, a plurality of substrate W are loaded and placed on the substrate holder 120 in accordance with a fixed interval.

Then, the substrate holder 120 on which the plurality of substrates W are loaded and placed is rotated to a predetermined direction.

Thereafter, the inert gas first gas G1 and the activated second gas PG2 are spatially separated, and are distributed to the first and third divided spaces DS1 and DS3 through the first and third gas distribution modules 130a and 130c. Inside. The first and third gas distribution modules 130a and 130c are operated in any one of the waveform diagrams shown in "Fig. 4B", "5A", "5B", and "5C".

At the same time, the activated flushing gas PG3 is distributed to the second and fourth divided spaces DS2 through the second and fourth gas distributing modules 430b and 430d. Within DS4. In more detail, the flushing gas G3 is supplied to the flushing gas distribution space S3 through the respective second and fourth gas distributing modules 430b and 430d; the plasma power is applied to the second and fourth gas distributing modules 430b and 430d, and the flushing gas The plasma formed by G3 inside the flushing gas distribution space S3 is activated; and the activated flushing gas PG3 is distributed downward into the second and fourth divided spaces DS2 and DS4. The second and fourth gas distribution modules 430b and 430d may continuously dispense the flushing gas G3, may dispense the flushing gas G3 every predetermined period, or sequentially dispense the flushing gas G3.

Therefore, the plurality of substrates W placed on the substrate holder 120 sequentially pass through the respective divided spaces DS1, DS2, DS3, and DS4 in accordance with the rotation of the substrate holder 120, whereby the predetermined film material transmits the first gas G1 and the activated second gas PG2. A reaction between them is deposited on each of the substrates W. In this case, the activated flushing gas PG3 distributed on the plurality of substrates W is flushed without depositing the first gas G1 on the substrate W and/or the remaining second gas G2 not reacting with the first gas.

Meanwhile, in the case of using the substrate processing method of the substrate processing apparatus of the fourth embodiment of the present invention, each of the second and fourth gas distribution modules 430b and 430d distributes the activated flushing gas PG3, but this need not be the case. Each of the second and fourth gas distribution modules 430b and 430d distributes the flushing gas G3 in an inert state, that is, the flushing gas G3 supplied to the flushing gas distributing space S3 as usual, to the substrate W. In this case, the substrate processing apparatus according to the fourth embodiment of the present invention may not include the power supply device 170 described above, or may be controlled under the control of the control module. The power supply unit 170 is configured such that no plasma power is supplied to the flushing gas distribution plate 433 or the cover 432 of the second and fourth gas distribution modules 430b and 430d.

Fig. 12 shows a substrate processing apparatus according to a fifth embodiment of the present invention. "Fig. 13" is a plan view showing the arrangement structure of the gas distribution module shown in Fig. 12.

Referring to FIG. 12 and FIG. 13 , a substrate processing apparatus 500 according to a fifth embodiment of the present invention includes a process chamber 110 , a chamber cover 115 , a substrate holder 120 , and a gas distribution unit 130 , wherein the gas distribution unit 130 A plurality of gas distribution modules 130a, 130b, 130c and 130d and a flushing gas distribution module 130e are included. The substrate processing apparatus 500 of "Fig. 12" and "Fig. 13" has the same structure as the substrate processing apparatus 100 of "Fig. 2" except that the gas distribution unit 130 further includes the flushing gas distribution module 130e, thereby omitting the same components. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the drawings, the same reference numerals are used to refer to the same or the like.

The flushing gas distribution module 130e is provided in the chamber cover 115, wherein the flushing gas distribution module 130e overlaps with the plurality of flushing gas distribution spaces PGS, wherein each of the chamber cover 115 and the substrate holder 120 are spatially separated A plurality of flushing gas distribution spaces PGS are defined in the divided spaces DS1, DS2, DS3, and DS4. On the substrate holder 120, the gas distribution modules 130a, 130b, 130c, and 130d alternate spatially with the flushing gas distribution module 130e.

The flushing gas distribution module 130e formed in a "+" shape is inserted into the flushing gas distribution module receiver 115e formed in the chamber cover 115. The flushing gas distribution module 130e distributes the flushing gas G3 to the plurality of flushing gases Within the distribution space PGS, the flushing gas G3 is supplied from a flushing gas supply (not shown).

The flushing gas G3 rinses the first gas G1 that is not deposited on the substrate W, and/or the remaining second gas G2 that is not reacted with the first gas G1. Further, the flushing gas G3 is distributed in an area between each of the divided spaces DS1, DS2, DS3, and DS4 overlapping the respective gas distribution modules 130a, 130b, 130c, and 130d, thereby partitioning the adjacent gas distribution modules. gas. To this end, the flushing gas G3 is at least any one of nitrogen (N2), argon Ar, helium, and helium.

A substrate processing method using the substrate processing apparatus of the fifth embodiment of the present invention will be described below.

First, the plurality of substrates W are loaded and placed on the substrate holder 120 at regular intervals.

Then, the substrate holder 120 on which the plurality of block substrates W are loaded and placed is rotated to a predetermined direction.

Thereafter, the first gas G1 is spatially separated from the activated second gas PG2, and is distributed downward to the divided spaces DS1, DS2, DS3, and DS4 through the first to fourth gas distribution modules 130a, 130b, 130c, and 130d. Inside. In this case, each of the gas distribution modules 130a, 130b, 130c, and 130d can be arbitrarily selected according to the waveform diagrams shown in "Fig. 4B", "5A", "5B", and "5C". Operation, or any one of the control modes 1 to 6 shown in Table 1 can be operated.

Then, the flushing gas G3 is distributed downward through the flushing gas distribution module 130e into each of the flushing gas distribution spaces PGS between each of the divided spaces DS1, DS2, DS3, and DS4.

Therefore, the plurality of substrates W placed on the substrate holder 120 sequentially pass through the respective divided spaces DS1, DS2, DS3, and DS4 in accordance with the rotation of the substrate holder 120, whereby the predetermined film material transmits the first gas G1 and the activated second gas PG2. A reaction between each is deposited on each of the substrates W. In this case, the flushing gas PG3 distributed on the plurality of substrates W flushes the first gas G1 not deposited on the substrate W, and/or the remaining second gas G2 not reacting with the first gas G1.

Meanwhile, the flushing gas distribution module 130e activates the flushing gas G3 and dispenses the activated flushing gas. In this case, the flushing gas G3 is activated by plasma, microwave, heat source or laser. For example, the flushing gas distribution module 130e activates the flushing gas G3 with a plasma and then dispenses the activated flushing gas.

According to the present invention, plasma is formed in each of a plurality of gas distribution modules spaced apart on the substrate holder 120, the gas is activated by the plasma, and the activated gas is distributed to the substrate W, thereby preventing the substrate W from being plasma-treated. damage.

In addition, the source gas and the reaction gas are spatially separated, and are partially distributed to the plurality of substrates W through a plurality of gas distribution modules, thereby improving the uniformity of the film deposited on the substrate W, and facilitating the control of the film. The particles are avoided by minimizing the thickness of the film material deposited in the process chamber 110.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.

W‧‧‧Substrate

100‧‧‧Substrate processing equipment

110‧‧‧Processing chamber

115‧‧‧Case cover

115a, 115b, 115c, 115d‧‧‧ module receiver

120‧‧‧Substrate support

130‧‧‧Gas Distribution Department

130a, 130b, 130c, 130d‧‧‧ gas distribution module

DS1, DS2, DS3, DS4‧‧‧ split space

Claims (25)

A substrate processing apparatus comprising: a processing chamber; a substrate holder for supporting at least one of the plurality of substrates, the substrate holder is provided in the processing chamber; and a chamber cover facing the substrate holder a chamber cover for covering the process chamber; and a gas distribution portion including a plurality of gas distribution modules, the radiation distribution pattern being provided in the chamber cover, wherein the gas distribution modules partially face the substrate holder And locally distributing at least one gas to the substrate holder, wherein at least one of the gas distribution modules activates at least one gas and dispenses the activated gas, wherein the gas distribution portion further comprises a flushing gas distribution module Provided in the chamber cover and arranged between each of the gas distribution modules to locally dispense flushing gas onto the substrate holder. The substrate processing apparatus of claim 1, wherein at least one gas distribution module of the gas distribution modules comprises: a gas distribution space for distributing gas; and a plasma electrode provided in the gas distribution space The plasma electrode partially faces the substrate holder, wherein the plasma electrode forms a plasma inside the gas distribution space according to the plasma power, activates the gas supplied to the gas distribution space, and distributes the activated gas. The substrate processing apparatus according to claim 1, Wherein each of the gas distribution modules distributes the first gas and the second gas into each of the divided spaces defined between the chamber cover and the substrate holder, and at least one of the gas distribution modules activates the first At least one of a gas and a second gas, and an activated gas. The substrate processing apparatus of claim 1, wherein each of the gas distribution modules distributes at least one of a first gas and a second gas into each of the divided spaces defined between the chamber cover and the substrate holder, And at least one gas distribution module for distributing the second gas in the gas distribution modules activates the second gas and distributes the activated second gas. A substrate processing apparatus comprising: a processing chamber; a substrate holder for supporting at least one of the plurality of substrates, the substrate holder is provided in the processing chamber; and a chamber cover facing the substrate holder a chamber cover for covering the process chamber; and a gas distribution portion including a plurality of gas distribution modules disposed in the chamber cover in accordance with a radiation pattern, wherein the gas distribution modules face the chamber cover a partition space defined and defined between the substrate holders, wherein a portion of the gas distribution modules of the gas distribution modules spatially separate at least one gas selected from the first gas and the second gas, and Allocating the separated gas into each divided space, The gas distribution portion further includes a flushing gas distribution module disposed in the chamber cover and disposed between each of the gas distribution modules to locally distribute the flushing gas to the substrate holder. The substrate processing apparatus of claim 5, wherein a part of the gas distribution modules of the gas distribution modules activates the second gas and distributes the activated second gas into the respective divided spaces. The substrate processing apparatus of claim 5, wherein the gas distribution module of the gas distribution module comprises: a first gas distribution space for distributing the first gas; and a second gas distribution space, Distributing a second gas; an insulating component for spatially separating the first gas distribution space from the second gas distribution space, and electrically insulating the first gas distribution space and the second gas distribution space; a slurry electrode is provided in the second gas distribution space, the plasma electrode partially faces the substrate holder, wherein the plasma electrode forms a plasma inside the second gas distribution space according to the plasma power, and the activation is supplied to The second gas of the second gas distribution space, and the second gas that is activated. The substrate processing apparatus of claim 5, wherein the gas distribution module of the gas distribution module comprises: a first gas distribution space for distributing the first gas; and a first plasma electrode Provided in the first gas distribution space, the first plasma electrode partially faces the substrate holder, wherein the first plasma electrode forms a plasma inside the first gas distribution space according to the plasma power, and the activation is provided a first gas to the first gas distribution space and a first gas to be activated; a second gas distribution space for distributing the second gas; and an insulating component for spatially separating the first gas Distributing a space and the second gas distribution space, and electrically insulating the first gas distribution space and the second gas distribution space; and a second plasma electrode is provided in the second gas distribution space, the second electricity The slurry electrode partially faces the substrate holder, wherein the second plasma electrode forms a plasma inside the second gas distribution space according to the plasma power, activates the second gas supplied to the second gas distribution space, and the distribution has been Activated second gas. The substrate processing apparatus of claim 5, wherein the remaining gas distribution module in the gas distribution module distributes a selected one of the first gas and the second gas remaining in an activated state or an inert state into the divided space. A substrate processing apparatus comprising: a processing chamber; a substrate holder for supporting at least one of the plurality of substrates, the substrate holder is provided in the processing chamber; and a chamber cover facing the substrate holder a chamber cover for covering the process chamber; and a gas distribution portion including a plurality of gas distribution modules disposed in the chamber cover in accordance with a radiation pattern and partially facing the substrate holder, wherein the gas a portion of the gas distribution module in the distribution module includes a first gas distribution space for dispensing the first gas and a second gas for dispensing a second gas distribution space, and a plasma formed inside the second gas distribution space, wherein the gas distribution portion further comprises a flushing gas distribution module, which is provided in the chamber cover and arranged in the gas distribution Between each of the modules, a portion of the flushing gas is locally dispensed onto the substrate holder. The substrate processing apparatus of claim 10, wherein the remaining gas distribution modules of the gas distribution modules comprise at least one gas distribution space of the first and second gas distribution spaces. The substrate processing apparatus of claim 11, wherein the remaining gas distribution module in the gas distribution module comprises a plasma electrode for forming a plasma inside the gas distribution space according to the plasma power, wherein the gas distribution space The plasma electrode provided in the section partially faces the substrate holder. The substrate processing apparatus of claim 10, wherein a part of the gas distribution module of the gas distribution module comprises a plasma electrode, which is provided in the second gas distribution space, partially facing the substrate holder, Wherein the plasma electrode forms a plasma inside the second gas distribution space in accordance with the plasma power, activates the second gas supplied to the second gas distribution space, and distributes the activated second gas. The substrate processing apparatus of claim 10, wherein the gas distribution module of the gas distribution module comprises: a first plasma electrode, which is provided in the first gas distribution space, the first electricity The slurry electrode partially faces the substrate holder, wherein the first plasma electrode forms a plasma inside the first gas distribution space according to the plasma power, and the activation is supplied a first gas to the first gas distribution space and a first gas to be activated; and a second plasma electrode to be provided in the second gas distribution space, the second plasma electrode partially facing The substrate holder, wherein the second plasma electrode forms a plasma inside the second gas distribution space in accordance with plasma power, activates a second gas supplied to the second gas distribution space, and distributes the activated second gas . The substrate processing apparatus of claim 5 or 10, wherein the remaining gas distribution module in the gas distribution module alternates with a portion of the gas distribution module, and the inert gas or the activated state of the flushing gas is distributed into the divided space. . The substrate processing apparatus according to any one of claims 3 to 14, wherein the first gas is a source gas, a film material to be deposited on the substrate, and the second gas is a reactive gas, and the first portion is distributed on the substrate. A gas reacts to form a film on the substrate. A substrate processing method comprising: placing a plurality of substrates on a substrate holder of a processing chamber at a fixed interval; rotating the substrate holder on which the substrates are placed; and activating at least one gas, and transmitting At least one of the plurality of gas distribution modules provided in the radiation pattern in one of the chamber chambers partially distributes the activated gas to the substrate holder, the substrate processing method further comprising transmitting each of the gas distribution modules A flushing gas distribution module is arranged between the parts, and the flushing gas is locally distributed to the substrate holder. The substrate processing method of claim 17, wherein the gas distribution modules each spatially separate the first gas and the second gas, and distribute the separated first gas and second gas to the chamber cover and Within each of the divided spaces defined locally between the substrate holders, and at least one of the gas distribution modules activates at least one of the first gas and the second gas, and dispenses the activated gas. The substrate processing method of claim 17, wherein the gas distribution modules each dispense at least one of the first gas and the second gas into each of the divided spaces defined between the chamber cover and the substrate holder, And at least one gas distribution module for distributing the second gas in the gas distribution modules, activating the second gas and dispensing the activated second gas. A substrate processing method comprising: (A) placing a plurality of substrates on a substrate holder of one of the processing chambers at a fixed interval; (B) rotating the substrate holder on which the substrates are placed; and (C) in space Separating the at least one gas selected from the first gas and the second gas, and partially distributing the separated gas through a plurality of gas distribution modules provided in a radiation pattern for covering a chamber cover of the process chamber And onto the substrate holder, wherein during the step (C), the partial gas distribution module activates the selected gas and distributes the activated gas. The substrate processing method further includes locally dispensing a flushing gas onto the substrate holder through a flushing gas distribution module arranged between each of the gas distribution modules. The substrate processing method of claim 20, wherein the partial gas distribution module activates the second gas and distributes the activated second gas. The substrate processing method of claim 20, wherein the remaining gas distribution module of the gas distribution modules distributes a gas selected from the first gas and the second gas maintained in an activated state or an inert state. A substrate processing method comprising: (A) placing a plurality of substrates on a substrate holder of one of the processing chambers at a fixed interval; (B) rotating the substrate holder on which the substrates are placed; and (C) transmitting through the substrate a plurality of gas distribution modules provided in a radiation pattern in a chamber cover to partially distribute gas to the substrate holder, wherein during the step (C), a portion of the gas distribution modules of the gas distribution modules are included Distributing a first gas distribution space of the first gas and a second gas distribution space for distributing the second gas, and forming a plasma inside the second gas distribution space, the substrate processing method further comprising transmitting the gas distribution mode A flushing gas distribution module arranged between each of the groups partially distributes the flushing gas onto the substrate holder. The substrate processing method of claim 23, wherein the remaining gas distribution module of the gas distribution modules comprises at least one of the first gas distribution space and the second gas distribution space. The substrate processing method of claim 24, wherein the remaining gas distribution module in the gas distribution module forms a plasma inside the gas distribution space according to the plasma power, and partially faces the substrate holder, wherein the plasma power It is applied to a plasma electrode provided in the gas distribution space.