TW201413785A - Apparatus of processing substrate - Google Patents

Abstract

Disclosed is a substrate processing apparatus comprising a process chamber; a substrate supporter, which rotates at a predetermined direction in the process chamber, for supporting at least one of substrates; a chamber lid confronting the substrate supporter, and covering an upper side of the process chamber; and a gas distributor having a plurality of gas distribution modules, connected to the chamber lid, for distributing gas on the substrate, wherein each of the gas distribution modules includes a ground electrode frame for forming a plasma reaction space, and a power source electrode, formed in the ground electrode frame, for generating a plasma discharge together with the ground electrode frame, wherein the power source electrode is provided in such a manner that a height of a second side being adjacent to the edge of the substrate supporter is greater than a height of a first side being adjacent to the center of the substrate supporter.

Description

Substrate processing equipment

The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus which contributes to improving deposition uniformity of a deposited film on a substrate.

In general, in order to manufacture a solar cell, a semiconductor device, and a flat display device, it is necessary to form a predetermined thin film layer, thin film circuit pattern, or optical pattern on the surface of the substrate. Accordingly, a semiconductor fabrication process is performed, such as a thin film deposition process for depositing a thin film of a predetermined material on a substrate, a photolithography process for selectively exposing the thin film using the photosensitive material, and patterning by selectively removing exposed portions of the thin film. Etching process.

The semiconductor manufacturing process is completed inside the substrate processing apparatus, wherein the substrate processing apparatus is designed to suit the optimum. Recently, substrate processing equipment using plasma is generally used to perform deposition or etching processes.

The semiconductor manufacturing apparatus using the plasma may be a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film, and a plasma etching apparatus for etching and patterning the thin film.

Fig. 1 is a device (substrate processing apparatus) for processing a substrate according to a conventional technique.

Referring to FIG. 1, a substrate processing apparatus of the prior art includes a chamber 10, a power supply electrode 20, a susceptor 30, and a gas distribution tool 40.

The chamber 10 provides a reaction space for substrate processing. In this case, the chamber 10 The predetermined portion of the bottom surface communicates with the exhaust port 12, and the exhaust port 12 serves to release the gas from the reaction space.

A power electrode 20 is provided above the chamber 10 to seal the reaction space.

One side of the power electrode 20 is electrically connected to the RF power source 24 through the matching component 22. The RF power source 24 generates RF power and supplies the generated RF power to the power electrode 20.

Further, the central portion of the power supply electrode 20 communicates with the air supply pipe 26, and the air supply pipe 26 supplies a source gas for substrate processing.

The matching component 22 is coupled between the power electrode 20 and the RF power source 24 to match the load impedance to the source impedance of the RF power supplied by the RF power source 24 to the power electrode 20.

A susceptor 30 is provided inside the chamber 10, and the susceptor 30 supports a plurality of substrates W loaded from the outside. The susceptor 30 corresponds to an opposite electrode opposite to the power supply electrode 20, and the susceptor 30 is electrically grounded through a lift shaft 32 for the lift base 30. The lifting shaft 32 is moved up and down through a lifting device (not shown). In this case, the lift shaft 32 is surrounded by bellows 34 to seal the lift shaft 32 and the bottom surface of the chamber 10.

A gas distribution tool 40 is provided below the power electrode 20, wherein the gas distribution tool 40 faces the base 30. In this case, the gas diffusion space 42 is formed between the gas distribution tool 40 and the power source electrode 20. Inside the gas diffusion space 42, the source gas supplied from the gas supply pipe 26 penetrating the power source electrode 20 is diffused. The gas distribution tool 40 uniformly distributes the source gas to the entire area of the reaction space through a plurality of gas distribution holes 44, and the gas distribution holes 44 communicate with the gas diffusion space 42.

In the case of a substrate processing apparatus of the prior art, the substrate W is loaded onto the pedestal After 30, the predetermined source gas is distributed to the reaction space of the chamber 10, and the radio frequency power is supplied to the power source electrode 20 to form a plasma in the reaction space, thereby depositing a predetermined film on the substrate W.

However, in the case of the substrate processing apparatus of the prior art, the space for distributing the source gas is the same as the space for forming the plasma. Therefore, the plasma discharge may damage the substrate W, thereby deteriorating the quality of the film on the substrate W.

One aspect of the present invention provides a substrate processing apparatus capable of preventing a substrate from being damaged by plasma discharge.

Another aspect of the present invention provides a substrate processing apparatus capable of forming a film having a uniform thickness.

The present invention provides a substrate processing apparatus including a process chamber, and a substrate holder for supporting at least one of a plurality of substrates, in order to obtain the objectives and other advantages of the present invention. a substrate holder is provided in the process chamber, and the substrate holder is rotated in a predetermined direction; a chamber cover facing the substrate holder, the chamber cover is for covering the upper side of the process chamber; and a gas distributor including a plurality of gas distribution modes a group for distributing gas on a substrate, wherein the gas distribution modules are coupled to the chamber cover, wherein each of the gas distribution modules includes a ground electrode frame for forming a plasma reaction space and is formed in the ground electrode frame The power electrode, the power electrode, and the ground electrode frame generate a plasma discharge, wherein the power electrode is provided in such a manner that the height of the second side adjacent to the edge of the substrate holder is greater than the height of the first side of the center of the adjacent substrate holder.

In another aspect of the invention, a substrate processing apparatus is provided comprising a process a substrate holder for supporting at least one of the plurality of substrates, wherein the substrate holder is provided in the process chamber, and the substrate holder rotates according to a predetermined direction; the chamber cover faces the substrate holder, and the chamber cover is used for covering An upper side of the process chamber; and a gas distributor comprising a plurality of gas distribution modules for distributing gas on the substrate, wherein the gas distribution modules are coupled to the chamber cover, wherein each of the gas distribution modules is included for Forming a ground electrode frame of the plasma reaction space and a power electrode formed in the ground electrode frame, wherein the power electrode and the ground electrode frame generate a plasma discharge, wherein the ground electrode frame includes a first ground sidewall formed at a center of the substrate holder and formed on the The second ground side wall of the edge of the substrate holder, and the height of the second ground side wall are greater than the height of the first ground side wall.

In another aspect of the invention, a substrate processing apparatus is provided comprising a process a substrate holder for supporting at least one of the plurality of substrates, wherein the substrate holder is provided in the process chamber, and the substrate holder rotates according to a predetermined direction; the chamber cover faces the substrate holder, and the chamber cover is used for covering An upper side of the process chamber; and a gas distributor comprising a plurality of gas distribution modules for distributing gas on the substrate, wherein the gas distribution modules are coupled to the chamber cover, wherein each of the gas distribution modules is included for Forming a ground electrode frame of the plasma reaction space, and a power electrode formed in the ground electrode frame, and the power electrode and the ground electrode frame generate a plasma discharge, wherein the plasma discharge at the edge of the substrate holder is relatively larger than the plasma of the center of the substrate holder Discharge.

According to the present invention, the plasma discharge does not appear in the space of the power electrode and the substrate However, it appears in the ground electrode frame of the gas distribution module to prevent the plasma discharge from damaging the substrate.

In addition, the power electrode or the ground electrode frame is formed in a manner adjacent to the substrate holder The height of one side of the edge is greater than the height of the central side of the adjacent substrate holder, thereby being able to compensate the base The difference in the linear velocity of the plate holder results in a difference in thickness of the film, so that a film having a uniform thickness deposited on the substrate W can be realized.

W‧‧‧Substrate

10‧‧‧ chamber

12‧‧‧Exhaust gas

20‧‧‧Power electrode

22‧‧‧Matching components

24‧‧‧RF power supply

26‧‧‧ gas supply pipe

30‧‧‧Base

32‧‧‧ Lifting shaft

34‧‧‧ telescopic tube

40‧‧‧Gas distribution tool

42‧‧‧ gas diffusion space

44‧‧‧ gas distribution hole

G1‧‧‧First gas

RG‧‧‧reaction gas

G2‧‧‧second gas

SG‧‧‧ source gas

S1‧‧‧First gas distribution space

S2‧‧‧Second gas distribution space

110‧‧‧Processing chamber

115‧‧‧Case cover

115a, 115b, 115c, 115d‧‧‧ module receiver

115e‧‧‧ pumping hole

117‧‧‧ pumping tube

120‧‧‧Substrate support

130‧‧‧ gas distributor

130a, 130b, 130c, 130d‧‧‧ gas distribution module

140‧‧‧ Plasma Power Supply

210‧‧‧Ground electrode frame

210a‧‧‧ upper board

210b‧‧‧ Grounding side wall

210b1‧‧‧First grounding side wall

210b2‧‧‧Second grounding side wall

210b3‧‧‧ third grounding side wall

210c‧‧‧ Grounding Barrier Components

212‧‧‧Insulation assembly support hole

214‧‧‧First gas supply hole

216‧‧‧Second gas supply hole

230‧‧‧ gas hole pattern assembly

231‧‧‧First Gas Distribution Department

232‧‧‧Second Gas Distribution Department

240‧‧‧Insulation components

241‧‧‧electrode insertion hole

250‧‧‧Power electrode

250a‧‧‧ first side

250b‧‧‧ second side

250c‧‧‧ third side

250d‧‧‧ fourth side

D1, D2‧‧‧ height

L1, L2‧‧‧ height

Fig. 1 shows a substrate processing apparatus of the prior art.

Fig. 2 shows a substrate processing apparatus according to an embodiment of the present invention.

FIG. 3 is a conceptual diagram of a plurality of gas distribution modules arranged on a substrate holder according to an embodiment of the present invention.

Figure 4 is a perspective view showing the gas distribution module of one embodiment of the present invention.

5 to 10 are schematic cross-sectional views of a power supply electrode according to various embodiments of the present invention.

Figure 11 is a cross-sectional view showing a gas distribution module according to an embodiment of the present invention.

Figure 12 is a cross-sectional view showing a gas distribution module according to another embodiment of the present invention.

Figure 13 is a cross-sectional view showing a gas distribution module according to another embodiment of the present invention.

Figure 14 is a cross-sectional view showing a gas distribution module according to another embodiment of the present invention.

Various embodiments of the present invention are described in detail below with reference to the drawings.

Fig. 2 shows a substrate processing apparatus according to an embodiment of the present invention. FIG. 3 is a conceptual diagram of a plurality of gas distribution modules arranged on a substrate holder according to an embodiment of the present invention.

Referring to FIGS. 2 and 3, a substrate processing apparatus according to an embodiment of the present invention includes a process chamber 110, a chamber cover 115, a substrate holder 120, and a gas distributor 130.

Process chamber 110 provides a reaction space for substrate processing such as thin film deposition Process. The bottom and/or sides of the process chamber 110 communicate with an exhaust pipe (not shown) for releasing gas from the reaction space.

A chamber cover 115 is provided on the process chamber 110, that is, the chamber cover 115 The process chamber 110 is covered, wherein the chamber cover 115 is electrically grounded. The chamber cover 115 supports the gas distributor 130, wherein the chamber cover 115 includes a plurality of module receivers 115a, 115b, 115c, and 115d to divide the upper side of the substrate holder 120 into a plurality of spaces. A plurality of module receivers 115a, 115b, 115c, and 115d are placed in a radiation pattern in the chamber cover 115, that is, a plurality of module receivers 115a, 115b, 115c, and 115d are opposed to the center point of the chamber cover 115. 90° is provided.

The process chamber 110 and the chamber cover 115 are formed into a polygonal structure such as a pattern The hexagonal structure shown is either formed into a circular or elliptical structure.

In Fig. 2, the chamber cover 115 includes four module receivers 115a, 115b, 115c and 115d, but not limited to this number. For example, the chamber cover 115 may include "2N" ("N" is an integer greater than 0) module receivers provided symmetrically with respect to the center point of the chamber cover 115, but is not limited to this number. The chamber cover 115 can include an odd number of module receivers. Hereinafter, it is assumed that the chamber cover 115 includes first to fourth module receivers 115a, 115b, 115c, and 115d.

The reaction space of the process chamber 110 sealed by the chamber cover 115 passes through the cavity A pumping pipe 117 provided in the chamber cover 115 is connected to an external pumping tool (not shown).

The pumping tube 117 is passed through a pumping hole 115e provided in the center of the chamber cover 115. The reaction spaces of the chambers 110 are in communication. Therefore, the interior of the chamber cover 115 can be in a vacuum state or an atmospheric state by using the pumping tube 117 in accordance with the pumping operation of the pumping tool. In this situation, The exhaust process of the reaction space may employ a central exhaust method by means of the pumping pipe 117 and the upper portion of the pumping hole 115e, but is not limited to this method. The pumping tube 117 and the pumping hole 115e can be omitted.

The substrate holder 120 is rotatably provided inside the processing chamber 110, wherein The substrate holder 120 may be electrically floating or grounded. The substrate holder 120 is supported by a rotating shaft (not shown) through which the rotating shaft penetrates the central portion of the bottom surface of the processing chamber 110. The substrate holder 120 is rotated in a predetermined direction (for example, a counterclockwise direction) by driving a shaft drive assembly (not shown) to rotate the rotary shaft. The rotating shaft exposed outside the bottom surface of the process chamber 110 is sealed through a bellows (not shown), wherein the bellows is provided in the bottom surface of the process chamber 110.

The substrate holder 120 is connected to a predetermined lifting tool and can be used on the lifting tool Move down.

The substrate holder 120 supports an external substrate loading device (not shown) At least one substrate W loaded. The substrate holder 120 is formed in the shape of a circular plate. The substrate holder 120 can support a plurality of substrates W, such as semiconductor substrates or wafers. It is preferable that a plurality of substrates W are arranged in a circular pattern at a fixed interval on the substrate holder 120, thereby improving throughput.

The gas distributor 130 includes first to fourth gas distribution modules 130a, 130b, 130c and 130d are spatially separated from each other with respect to the central portion of the substrate holder 120 and inserted into the first to fourth module receivers 115a, 115b, 115c, and 115d of the chamber cover 115, respectively. The first to fourth gas distribution modules 130a, 130b, 130c, and 130d respectively distribute the first gas G1 and the second gas G2 to the gas distribution region of the substrate holder 120, thereby forming a thin film layer on the substrate W.

The first gas G1 is activated by the plasma discharge, and the activated first gas is divided It is attached to the substrate W. The first gas G1 is a reaction gas RG, and the reaction gas RG reacts with the source gas SG explained below to form a thin film layer. For example, the reaction gas RG is at least any one selected from the group consisting of nitrogen gas, oxygen gas, nitrogen dioxide, and ozone.

The second gas G2 is a source gas SG, and the source gas SG contains a film material to be deposited on the substrate W. The source gas contains bismuth, titanium (titanium, zirconium, hafnium, etc.) or aluminum film materials. For example, the source gas SG of the film material containing ruthenium may be from tetraethoxy decane (TEOS; Tetraethylorthosilicate), dichlorosilane (DCS; Dichlorosilane), Hexachlorosilane (HCD), tris(diethyl). Amino) decane (TriDMAS; Tri-dimethylaminosilane), trimethylsilylamine (TSA; Trisilylamine), SiH ₂ Cl ₂ , silane (SiH ₄ ), disilane (Si ₂ H ₆ ) gas, trisilane (trisilane) a gas selected from the group consisting of Si ₃ H ₈ ), butane (Si ₄ H ₁₀ ), and pentamane (Si ₅ H ₁₂ ).

Figure 4 is a perspective view of a gas distribution module according to an embodiment of the present invention Figure. As shown in FIG. 4, a gas distribution module according to an embodiment of the present invention includes a ground electrode frame 210, an insulation assembly 240, and a power supply electrode 250.

The ground electrode frame 210 forms a plasma discharge space. Therefore, in the ground electrode frame A plasma discharge occurs inside 210. Further, the ground electrode frame 210 serves as a ground electrode, and the ground electrode frame 210 together with the power source electrode 250 generates a plasma discharge.

The ground electrode frame 210 includes an upper plate 210a and a ground side wall 210b.

The upper plate 210a provides an upper surface of the ground electrode frame 210, wherein the upper plate The 210a is formed in a rectangular shape and is connected to a corresponding module receiver of the chamber cover 115 (refer to 115a, 115b, 115c, and 115d of FIG. 2). In the upper plate 210a, there are an insulation assembly support hole 212, a first gas supply hole 214, and a second gas supply hole 216. Insulation assembly support hole 212 The insulating component 240 can be inserted into the interior of the ground electrode frame 210. The first gas supply hole 214 and the second gas supply hole 216 enable the source gas and the reaction gas to flow into the inside of the ground electrode frame 210.

The ground side wall 210b forms a side surface of the ground electrode frame 210, wherein the ground side A wall 210b is provided in each of the four sides of the rectangular upper plate 210a. That is, the ground sidewall 210b includes a first ground sidewall 210b1 formed at the center of the substrate holder 120 (refer to FIG. 2), and a second ground sidewall 210b2 formed at the edge of the substrate holder 120 (refer to FIG. 2), and The first ground sidewall 210b1 and the third ground sidewall 210b3 of the second ground sidewall 210b2 are connected.

In this case, the height D2 of the second ground sidewall 210b2 is greater than the first ground. The height D1 of the side wall 210b1 helps to maintain a uniform thickness of the film deposited on the center of the substrate holder 120 (refer to Fig. 2) and a uniform thickness of the film deposited on the edge of the substrate holder 120 (refer to Fig. 2).

That is to say, please refer to FIG. 2, when the substrate holder 120 rotates, the substrate support The linear velocity of the center of the frame 120 is lower than the linear velocity of the edge of the substrate holder 120. Therefore, the thickness of the film deposited on the center of the substrate holder 120 is greater than the thickness of the film deposited on the edge of the substrate holder 120. In order to overcome this problem, according to an embodiment of the present invention, the height D2 of the second ground sidewall 210b2 formed in the edge of the substrate holder 120 is greater than the height D1 of the first ground sidewall 210b1 formed at the center of the substrate holder 120, whereby the substrate holder 120 The deposition of the film in the edge is larger than the deposition of the film in the center of the substrate holder 120, so that the difference in thickness of the film caused by the difference in the linear velocity of the substrate holder 120 can be compensated for. Therefore, a uniform film can be formed on the substrate W.

Meanwhile, the height of any of the elements described herein represents the height in the up and down direction.

The insulating component 240 connects the power electrode 250 to a ground electrode used as a ground electrode Block 210 is insulated. The insulation assembly 240 is inserted into the insulation assembly support hole formed in the ground electrode frame 210. Further, the insulating member 240 has the electrode insertion hole 241 such that the power supply electrode 250 is inserted into the inside of the ground frame 210 through the electrode insertion hole 241.

The power electrode 250 is inserted through the electrode insertion hole 241 of the insulating member 240 The inside of the ground electrode frame 210 is inside. Therefore, a charge discharge occurs between the power source electrode 250 and the ground electrode frame 210.

The power supply electrodes 250 are formed in a matrix shape. The power electrode 250 is in the following manner Provided, the height L2 of the second side adjacent to the edge of the substrate holder 120 is greater than the height L1 of the first side adjacent to the center of the substrate holder 120. The reason why the height L2 of the second side of the power supply electrode 250 is greater than the height L1 of the first side of the power supply electrode 250 is the same as the reason why the height D2 of the second ground side wall 210b2 is greater than the height D1 of the first ground side wall 210b1. That is, the height L2 of the second side adjacent to the edge of the substrate holder 120 is greater than the height L1 of the first side adjacent to the center of the substrate holder 120, and the plasma discharge in the edge of the substrate holder 120 is relatively stronger than the center of the substrate holder 120. The charge is discharged, thereby enabling more ion dissociation in the edges of the substrate holder 120.

5 to 10 are cross-sectional views of a power supply electrode 250 according to various embodiments of the present invention. Schematic diagram.

As shown in FIG. 5, the power electrode 250 is provided in a manner of abutting the substrate holder. The height L2 of the second side 250b of the edge of 120 is greater than the height L1 of the first side 250a of the center of the adjacent substrate holder 120.

In this case, the lower end and the second side 250b for connecting the first side 250a The third side 250c of the lower end is a slanted straight line. Further, the fourth side 250d for connecting the upper end of the first side 250a to the upper end of the second side 250b is a straight line horizontal with respect to the substrate holder 120.

As shown in FIG. 6, the power electrode 250 is provided in a manner of abutting the substrate holder. The height L2 of the second side 250b of the edge of 120 is greater than the height L1 of the first side 250a of the center of the adjacent substrate holder 120.

In this case, the lower end for connecting the first side 250a to the second side 250b The third side 250c of the lower end is in the shape of a stepped line. Further, the fourth side 250d for connecting the upper end of the first side 250a to the upper end of the second side 250b is a straight line horizontal with respect to the substrate holder 120.

As shown in FIG. 7, the power electrode 250 is provided in a manner of abutting the substrate holder. The height L2 of the second side 250b of the edge of 120 is greater than the height L1 of the first side 250a of the center of the adjacent substrate holder 120.

In this case, the lower end for connecting the first side 250a to the second side 250b The third side 250c of the lower end is a slanted straight line. Further, the fourth side 250d for connecting the upper end of the first side 250a to the upper end of the second side 250b is an inclined straight line. However, the oblique direction of the third side 250c is opposite to the oblique direction of the fourth side 250d.

As shown in FIG. 8, the power electrode 250 is provided in a manner of abutting the substrate holder. The height L2 of the second side 250b of the edge of 120 is greater than the height L1 of the first side 250a of the center of the adjacent substrate holder 120.

In this case, the lower end for connecting the first side 250a to the second side 250b The third side 250c of the lower end is a horizontal straight line with respect to the substrate holder 120. Further, the fourth side 250d for connecting the upper end of the first side 250a to the upper end of the second side 250b is an inclined straight line.

As shown in FIG. 9, the power supply electrode 250 is provided in the form of an adjacent substrate holder. The height L2 of the second side 250b of the edge of 120 is greater than the height L1 of the first side 250a of the center of the adjacent substrate holder 120.

In this case, the lower end for connecting the first side 250a to the second side 250b A portion of the lower end third side 250c (eg, a portion adjacent the edge of the substrate holder 120) is formed as an oblique straight line, and the remaining portion of the third side 250c (eg, adjacent the central portion of the substrate holder 120) The portion is formed as a straight line horizontal to the substrate holder 120. Further, the fourth side 250d for connecting the upper end of the first side 250a to the upper end of the second side 250b is a straight line horizontal with respect to the substrate holder 120.

As shown in FIG. 10, the power electrode 250 is provided in a manner of abutting the substrate holder. The height L2 of the second side 250b of the edge of 120 is greater than the height L1 of the first side 250a of the center of the adjacent substrate holder 120.

In this case, the lower end for connecting the first side 250a to the second side 250b A portion of the lower end third side 250c (eg, a portion adjacent the edge of the substrate holder 120) is formed in the shape of a stepped line, and the remaining portion of the third side 250c (eg, adjacent to the central portion of the substrate holder 120) The portion is formed as a straight line horizontal to the substrate holder 120. Further, the fourth side 250d for connecting the upper end of the first side 250a to the upper end of the second side 250b is a straight line horizontal with respect to the substrate holder 120.

However, the power electrode 250 of the present invention is not limited to the above 5th to the above Figure 10 shows an embodiment. For example, in the case where the height L2 of the second side 250b adjacent to the edge of the substrate holder 120 is larger than the height L1 of the first side 250a adjacent to the center of the substrate holder 120, the power supply electrode 250 of the present invention may be formed in various shapes. Although not shown in the figure, it is used with Figure 5 to In the same manner as the power supply electrode 250 shown in Fig. 10, the shape of the third ground side wall 210b3 of Fig. 4 can be changed.

That is, the third ground sidewall 210b3 can be arranged to be flush with the power electrode 250 Row. The third ground sidewall 210b3 is provided in such a manner that the height of the second side adjacent to the edge of the substrate holder 120 is greater than the height of the first side of the center of the adjacent substrate holder 120. In this case, the shape of the third side for connecting the lower end of the first side to the lower end of the second side is variable, and the shape of the fourth side for connecting the upper end of the first side to the upper end of the second side is variable.

11 is a schematic cross-sectional view of a gas distribution module according to an embodiment of the present invention. The figure is a schematic cross-sectional view taken along line A-A' of Fig. 4. Hereinafter, a gas distribution module according to an embodiment of the present invention will be described in detail with reference to FIG.

As shown in FIG. 11, the first to fourth gas distribution modules 130a, 130b, 130c And each of 130d includes a ground electrode frame 210, a gas hole pattern assembly 230, an insulation assembly 240, and a power supply electrode 250.

The ground electrode frame 210 is provided to include the first gas distribution space S1 and the first Both of the gas distribution spaces S2, wherein the first gas distribution space S1 is for distributing the first gas G1 and the second gas distribution space S2 is for distributing the second gas G2. The ground electrode frame 210 is inserted into each of the module receivers 115a, 115b, 115c, and 115d of the chamber cover 115, and is electrically grounded through the chamber cover 115. To this end, the ground electrode frame 210 includes an upper plate 210a, a ground side wall 210b, and a ground barrier assembly 210c.

The upper plate 210a is formed in a rectangular shape to connect the corresponding mold of the chamber cover 115 Group receivers 115a, 115b, 115c, and 115d. In the upper plate 210a, there are an insulation assembly support hole 212, a first gas supply hole 214, and a second gas supply hole 216.

The insulating component support hole 212 penetrates the upper plate 210a, so that the insulating component supports The hole 212 is in communication with the first gas distribution space S1. The insulating member support hole 212 is formed to have a plane of a rectangular shape.

The first gas supply hole 214 penetrates the upper plate 210a such that the first gas supply The hole 214 is in communication with the first gas distribution space S1. Since the first gas supply hole 214 is connected to the externally supplied first gas supply means (not shown) through the air supply pipe (not shown), the first gas supply hole 214 is supplied through the air supply pipe (not shown) from the supply. The first gas G1 of the first gas supply means (not shown), that is, the reaction gas RG. The first gas supply holes 214 may be formed at both sides of the insulation assembly support hole 212, wherein a plurality of first gas supply holes 214 are provided in accordance with the fixed intervals, and the plurality of first gas supply holes 214 are in communication with the first gas distribution space S1. . The first gas G1 supplied to the first gas supply hole 214 is supplied to the first gas distribution space S1, activated by the plasma discharge inside the first gas distribution space S1, and then distributed downward in the direction of the substrate W according to the first pressure. . To this end, the lower surface of the first gas distribution space S1 functions as the first gas distribution portion 231 having a completely open shape such that the first gas G1 is distributed downward toward the substrate W direction, and an additional gas distribution hole pattern is not formed.

The second gas supply hole 216 penetrates the upper plate 210a such that the second gas supply The hole 216 is in communication with the second gas distribution space S2. Since the second gas supply hole 216 is connected to the externally supplied second gas supply means (not shown) through the air supply pipe (not shown), the second gas supply hole 216 is supplied through the air supply pipe (not shown). The second gas G2 from the second gas supply means (not shown), that is, the source gas SG. A plurality of second gas supply holes 216 are provided in the upper plate 210a at regular intervals, and the plurality of second gas supply holes 216 are in communication with the second gas distribution space S2.

Each of the plurality of ground side walls 210b having a predetermined height is from the upper plate The lower surface of each of the long and short sides of the 210a is vertically protruded, thereby preparing a rectangular-shaped opening on the lower side of the upper plate. Each of the ground side walls 210b is electrically grounded through the chamber cover 115, whereby each of the ground side walls 210b serves as a ground electrode.

A ground barrier rib assembly 210c having a predetermined height from the center of the upper plate 210a The lower surface of the portion protrudes vertically, wherein the ground barrier assembly 210c is arranged in parallel with the long sides of the ground sidewall 210b. The first gas distribution space S1 and the second gas distribution space S2 are separated from each other by the ground barrier assembly 210c. The ground barrier rib assembly 210c may be formed integrally with the ground electrode frame 210, or electrically connected to the ground electrode frame 210, and electrically grounded through the ground electrode frame 210, whereby the ground barrier rib assembly 210c functions as a ground electrode.

The ground barrier rib assembly 210c is identical in shape to the third ground sidewall 210b3 above.

In the above description, the ground electrode frame 210 includes an upper plate 210a and a ground side wall. 210b and the ground barrier assembly 210c, but are not limited to this configuration. For example, the upper plate 210a, the ground side wall 210b, and the ground barrier assembly 210c included in the ground electrode frame 210 may be integrally formed.

Meanwhile, the first and second gas distribution spaces in the ground electrode frame 210 may be changed. The position of S1 and S2. That is, the first and second gas distribution spaces S1 and S2 are placed to expose the substrate W, and the substrate W is rotated by the rotation of the substrate holder 120, first the substrate is exposed to the second gas G2, and then exposed to the first The gas G1, or the first and second gas distribution spaces S1 and S2, are placed to expose the substrate W, and the substrate W is rotated by the rotation of the substrate holder 120, first exposed to the first gas G1, and then exposed to the second gas. G2.

a gas hole pattern assembly 230 is provided in the second gas distribution space S2, wherein the gas The body hole pattern assembly 230 prevents the first gas G1 distributed by the first gas distribution space S1 placed adjacent to the second gas distribution space S2 from being diffused, recirculated, or infiltrated into the second gas distribution space S2, and the ground barrier assembly 210c is provided Between the first gas distribution space S1 and the second gas distribution space S2. That is, if the first gas G1 is diffused, recirculated, or infiltrated into the second gas distribution space S2, the first gas G1 reacts with the second gas G2 in the second gas distribution space S2, whereby the film is deposited to the first On the inner side wall of the second gas distribution space S2, or a thin film of powder material is formed on the inner side wall of the second gas distribution space S2, whereby the particles may fall onto the substrate W. Therefore, the gas hole pattern assembly 230 avoids depositing a film on the inner side wall of the second gas distribution space S2 or avoiding formation of a thin film of powder material on the inner side wall of the second gas distribution space S2.

The gas hole pattern assembly 230 and each of the portions for forming the second gas distribution space S2 The grounding sidewall 210b is formed integrally with the lower surface of the ground barrier assembly 210c to cover the lower surface of the second gas distribution space S2, or is formed as an insulating plate (or showerhead) of a non-polar insulating material and is connected to the second gas distribution space. The lower surface of S2. Therefore, a predetermined gas diffusion space or gas buffer space is prepared in the second gas distribution space S2 between the upper plate 210a of the ground electrode frame 210 and the gas hole pattern assembly 230.

The gas hole pattern assembly 230 includes a plurality of second gas distribution portions 232, thereby The second gas G2 is distributed downward toward the substrate W, wherein the second gas G2 is supplied to the second gas distribution space S2 through the second gas supply hole 216.

Forming a plurality of second gas distribution portions 232 in the shape of a hole pattern to The second gas distribution space S2 of the diffusion second gas G2 is in communication. Therefore, the second gas G2 is distributed downward in the direction of the substrate W according to the second pressure, wherein the second pressure of the second gas G2 is higher than the first gas The distribution pressure of the body G1. The gas hole pattern assembly 230 increases the distribution pressure of the second gas G2 to the substrate W direction, thereby preventing the first gas G1 distributed to the first gas distribution space S1 from being diffused, recirculated, and infiltrated into the second gas distribution space S2. .

In addition, the gas hole pattern assembly 230 passes through the second gas distribution portion 232 downward The second gas G2 is dispensed, and the gas hole pattern assembly 230 is formed in a plate shape having holes, thereby delaying or slowing the flow of the second gas G2, thereby reducing the gas consumption of the second gas G2. Further, by changing the shape of the hole pattern of the second gas distributing portion 232, the gas flow rate can be adjusted, thereby improving the use efficiency of the second gas G2.

The insulation assembly 240 is formed of an insulating material. Insulation assembly 240 is inserted into ground The insulating member formed in the electrode frame 210 supports the hole 212 and is joined to the upper surface of the ground electrode frame 210 by a joint assembly (not shown). The insulation assembly 240 includes an electrode insertion hole that communicates with the first gas distribution space S1.

The power supply electrode 250 is formed of a conductive material. Passing through the electrode of the insulating assembly 240 The power supply electrode 250 of the insertion hole protrudes from the lower surface of the ground electrode frame 210, whereby the power supply electrode 250 having a predetermined height is located in the first gas distribution space S1. In this case, the protruding height of the power supply electrode 250 is the same as the protruding height of the ground side wall 210b of the ground electrode frame 210 serving as the ground electrode and the ground barrier rib assembly 210c.

The power electrode 250 is electrically connected to the plasma power supply 140 by using a feedback cable. The plasma discharge is generated in the first gas distribution space S1 in accordance with the electrode power supplied from the plasma power supply 140. That is, a plasma discharge occurs between each of the ground side wall 210b serving as a ground electrode and the ground barrier rib assembly 210c and the power supply electrode 250 to which the electrode power is supplied, so that the first to be supplied to the first gas distribution space S1 A gas G1 is activated.

The plasma power supply 140 generates plasma power having a predetermined frequency, and The generated plasma power is supplied to the first to fourth gas distribution modules 130a, 130b, 130c, and 130d collectively or separately through a feedback cable. In this case, the plasma power is supplied with high frequency (HF) power or ultra high frequency (VHF) power. For example, the frequency range of high frequency (HF) power is 3 MHz to 30 MHz, and the frequency range of ultra high frequency (VHF) power is 30 MHz to 300 MHz.

In the meantime, the feedback cable is connected to an impedance matching circuit (not shown). Impedance The mating circuit matches the load impedance with the source impedance of the plasma power supplied from the plasma power supply 140 to the first to fourth gas distribution modules 130a, 130b, 130c, and 130d. The impedance matching circuit includes at least two of the impedance elements (not shown) formed by at least one of the variable capacitor and the variable inductor.

According to the plasma power supplied to the power electrode 250, the first to fourth gases described above The body distribution modules 130a, 130b, 130c, and 130d respectively generate a plasma discharge in the first gas distribution space S1, and activate the first gas G1 of the first gas distribution space S1 through the plasma discharge, and activate the first gas G1. Assigned downwards. At the same time, the first to fourth gas distribution modules 130a, 130b, 130c, and 130d respectively distribute the second gas G2 of the second gas distribution space S2 downward through the gas hole pattern assembly 230 in accordance with a predetermined pressure.

In the meantime, it is not necessary to be in each of the first to fourth gas distribution modules 130a, 130b, The same gas (for example, the first gas G1 and/or the second gas G2) is distributed in 130c and 130d. That is, the first to fourth gas distribution modules 130a, 130b, 130c, and 130d each dispense a different gas, thereby depositing a plurality of layers on the substrate W.

Although not shown in the drawings, the first to fourth gas distribution modules 130a, 130b, At least one of 130c and 130d has only one gas distribution space instead of the first and second gas The volume allocates spaces S1 and S2. In this case, one of the gas distribution modules distributes the source gas, and the other gas distribution module distributes the reaction gas, so that a layer having the same characteristics as the layer deposited by Atomic Layer Deposition (ALD) can be obtained.

First to fourth gas distribution modules 130a, 130b, 130c, and 130d to In the lesser case, the first gas distribution space S1 is the same size as the second gas distribution space S2, but is not limited to this structure. That is, the first gas distribution space S1 may be different in size from the second gas distribution space S2.

The basis of the substrate processing apparatus using one embodiment of the present invention is described in detail below. Board processing method.

First, a plurality of gas distribution modules 130a are installed inside the processing chamber 110, 130b, 130c, and 130d, at least one substrate W is loaded onto the substrate holder 120.

The substrate holder 120 on which the substrate W is loaded is rotated and a plasma discharge occurs At this time, the first gas G1 and the second gas G2 are distributed downward to the substrate W through at least one gas distribution module of the plurality of gas distribution modules, thereby performing a thin film deposition process. Therefore, a thin film layer is formed on the substrate W.

According to the present invention, the first gas distribution space S1 spatially separated from each other The reaction gas RG and the source gas SG are separately distributed in the second gas distribution space S2, thereby contributing to controlling the quality of the film layer and the deposition speed of the film layer.

According to the present invention, the plasma discharge space is not formed in the power supply electrode and the substrate In the meantime, it is formed between the power supply electrode 250 and the ground electrode facing each other, so that the plasma discharge can be prevented from damaging the substrate W. According to an embodiment of the present invention, the power supply electrode 250 and the ground electrode are provided to be perpendicular to the surface of the substrate W, whereby the positive or negative ions generated by the plasma discharge are not oriented toward the base. The surface direction of the board W is moved, but moved in the direction of the power supply electrode 250 or the ground electrode, thereby minimizing the influence of the plasma discharge on the substrate W.

In the case of the prior art, since the source gas SG is distributed to the substrate W The use efficiency of the source gas SG is reduced over the entire area. In the meantime, the present invention uses a plurality of gas distribution modules 130a, 130b, 130c, and 130d to increase the efficiency of use of the source gas SG.

Figure 12 is a cross-sectional view showing a gas distribution module according to another embodiment of the present invention Figure.

In addition to the power electrode 250 additionally formed in the second gas distribution space S2, The gas distribution module of Fig. 12 has the same structure as the gas distribution module of Fig. 11, and thus the detailed explanation of the same components is omitted.

As shown in FIG. 12, in accordance with another embodiment of the present invention, in the second gas distribution An additional power supply electrode 250 is formed in the space S2. To this end, the insulating component support hole 212 is provided in such a manner that the insulating component support hole 212 penetrates the upper plate 210a, and the insulating component support hole 212 communicates with the second gas distribution space S2. Further, the insulation assembly 240 is inserted into the insulation assembly support hole 212. In this case, the insulating member 240 includes an electrode insertion hole that communicates with the second gas distribution space S2. Therefore, the power source electrode 250 penetrating the electrode insertion hole protrudes from the lower surface of the upper plate 210a.

The structure of the power electrode 250 and the first gas are formed in the second gas distribution space S2 The power supply electrode 250 formed in the body distribution space S1 has the same structure.

Figure 13 is a cross-sectional view showing a gas distribution module according to another embodiment of the present invention Figure. The gas distribution module of Fig. 13 is the same as the gas distribution module of Fig. 11 except that the gas hole pattern assembly 230 is removed from the second gas distribution space S2. The gas hole pattern component 230 can The advantages described above are achieved, but the gas hole pattern assembly 230 can be omitted.

Figure 14 is a cross-sectional view showing a gas distribution module according to another embodiment of the present invention. The gas distribution module of Fig. 14 is the same as the gas distribution module of Fig. 12 except that the gas hole pattern assembly 230 is removed from the second gas distribution space S2.

Although the embodiments of the present invention are disclosed above, it is not intended to limit the present invention, and those skilled in the art, regardless of the spirit and scope of the present invention, the shapes, configurations, and features described in the scope of the present application. And the number of modifications may be made, and the scope of patent protection of the present invention shall be determined by the scope of the patent application attached to the specification.

W‧‧‧Substrate

110‧‧‧Processing chamber

115‧‧‧Case cover

115a, 115b, 115c, 115d‧‧‧ module receiver

115e‧‧‧ pumping hole

117‧‧‧ pumping tube

120‧‧‧Substrate support

130‧‧‧ gas distributor

130a, 130b, 130c, 130d‧‧‧ gas distribution module

Claims (16)

A substrate processing apparatus comprising: a processing chamber; a substrate holder for supporting at least one of the plurality of substrates, wherein the substrate holder is provided in the processing chamber, and the substrate holder rotates according to a predetermined direction; a chamber cover facing the substrate holder, the chamber cover for covering an upper side of the process chamber; and a gas distributor including a plurality of gas distribution modules for distributing gas on the substrate, wherein the gas a distribution module is coupled to the chamber cover, wherein each of the gas distribution modules includes a ground electrode frame for forming a plasma reaction space and a power electrode formed in the ground electrode frame, the power electrode The ground electrode frame generates a plasma discharge, wherein the power electrode is provided in such a manner that a height of a second side adjacent to an edge of the substrate holder is greater than a height of a first side adjacent to a center of the substrate holder. The substrate processing apparatus of claim 1, wherein a third side of the power electrode is connected to a lower end of the first side to a lower end of the second side, the third side forming an inclined straight line. The substrate processing apparatus of claim 1, wherein a third side of the power electrode is connected to a lower end of the first side to a lower end of the second side, the third side forming a shape of a step line. The substrate processing apparatus of claim 1, wherein a third side of the power electrode is connected to a lower end of the first side to a lower end of the second side, the third side forming a horizontal line with respect to the substrate holder. The substrate processing apparatus of claim 1, wherein a third side of the power electrode is connected to a lower end of the first side to a lower end of the second side, the third side comprising a portion formed as an oblique straight line and formed to be opposite The remaining portion of the horizontal line of the substrate support. The substrate processing apparatus of claim 1, wherein a third side of the power electrode is connected to a lower end of the first side to a lower end of the second side, the third side comprising a portion formed into a shape of a stepped line and formed as The remainder of the horizontal line relative to the substrate support. A substrate processing apparatus comprising: a processing chamber; a substrate holder for supporting at least one of the plurality of substrates, wherein the substrate holder is provided in the processing chamber, and the substrate holder rotates according to a predetermined direction; a chamber cover facing the substrate holder, the chamber cover for covering an upper side of the process chamber; and a gas distributor including a plurality of gas distribution modules for distributing gas on the substrate, wherein the gas a distribution module is coupled to the chamber cover, wherein each of the gas distribution modules includes a ground electrode frame for forming a plasma reaction space and a one formed in the ground electrode frame a power electrode, the power electrode and the ground electrode frame generating a plasma discharge, wherein the ground electrode frame includes a first ground sidewall formed at a center of the substrate holder and a second ground sidewall formed at an edge of the substrate holder And a height of the second ground sidewall is greater than a height of the first ground sidewall. The substrate processing apparatus of claim 7, wherein the ground electrode frame comprises a third ground sidewall connecting the first ground sidewall and the second ground sidewall, the third ground sidewall being formed adjacent to the substrate holder The height of a second side of the edge is greater than the height of a first side adjacent the center of the substrate holder. A substrate processing apparatus comprising: a processing chamber; a substrate holder for supporting at least one of the plurality of substrates, wherein the substrate holder is provided in the processing chamber, and the substrate holder rotates according to a predetermined direction; a chamber cover facing the substrate holder, the chamber cover for covering an upper side of the process chamber; and a gas distributor including a plurality of gas distribution modules for distributing gas on the substrate, wherein the gas a distribution module is coupled to the chamber cover, wherein each of the gas distribution modules includes a ground electrode frame for forming a plasma reaction space, and a power electrode formed in the ground electrode frame, the power electrode Producing a plasma discharge together with the ground electrode frame Electrically, wherein the plasma discharge at the edge of the substrate holder is relatively greater than the plasma discharge at the center of the substrate holder. The substrate processing apparatus according to any one of claims 1 to 9, wherein the gas distribution module comprises a first gas distribution space for distributing a first gas and a second gas for distributing a second gas. A distribution space, wherein the first gas distribution space is spatially separated from the second gas distribution space. The substrate processing apparatus of claim 10, wherein the gas distribution module comprises a ground barrier assembly for spatially separating the first gas distribution space from the second gas distribution space, the supply of the ground barrier component The method is such that the height of a second side adjacent to the edge of the substrate holder is greater than the height of a first side adjacent to the center of the substrate holder. The substrate processing apparatus of claim 10, wherein the power supply electrode is formed in each of the first gas distribution space and the second gas distribution space. The substrate processing apparatus of claim 10, wherein the second gas distribution space additionally has a gas hole pattern assembly for preventing the first gas distributed by the first gas distribution space from flowing into the second gas distribution space . The substrate processing apparatus according to any one of claims 1 to 9, wherein the power supply electrode extends in a direction perpendicular to a surface of the substrate. The substrate processing apparatus according to any one of claims 1 to 9, wherein The gas dispensed by any one of the gas distribution modules is different from the gas dispensed by the other of the gas distribution modules. The substrate processing apparatus according to any one of claims 1 to 9, wherein at least one of the gas distribution modules has a gas distribution space.