KR102046391B1 - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method using the same, which are capable of increasing the deposition uniformity of a thin film deposited on a substrate by spatially separating the source gas and the reactive gas and spraying the substrate. The apparatus includes a process chamber; A substrate support part installed in the process chamber to support a plurality of substrates and rotating in a predetermined direction; A chamber lid covering an upper portion of the process chamber to face the substrate support; And a gas injection unit having a plurality of gas injection modules inserted into the chamber lid at regular intervals and injecting different first and second gases onto a substrate, wherein each of the plurality of gas injection modules includes the first gas. A first gas injection space for spraying; A second gas injection space for injecting the second gas; And a gas hole pattern member installed in the second gas injection space to prevent the first gas injected from the first gas injection space from flowing into the second gas injection space.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus and a substrate processing method capable of increasing the deposition uniformity of a thin film deposited on a substrate.

In general, in order to manufacture a solar cell, a semiconductor device, a flat panel display, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a surface of a substrate. Semiconductor manufacturing processes such as a thin film deposition process, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for forming a pattern by removing the thin film of the selectively exposed portion are performed.

Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed in an optimal environment for the process, and in recent years, many substrate processing apparatuses that perform deposition or etching processes using plasma are widely used.

The substrate processing apparatus using plasma includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, a plasma etching apparatus for etching and patterning a thin film.

1 is a diagram schematically illustrating a general substrate processing apparatus.

Referring to FIG. 1, a general substrate processing apparatus includes a chamber 10, a plasma electrode 20, a susceptor 30, and a gas ejection means 40.

Chamber 10 provides a reaction space for a substrate processing process. At this time, one bottom surface of the chamber 10 communicates with an exhaust port 12 for exhausting the reaction space.

The plasma electrode 20 is installed above the chamber 10 to seal the reaction space.

One side of the plasma electrode 20 is electrically connected to an RF (Radio Frequency) power source 24 through the matching member 22. In this case, the RF power source 24 generates RF power and supplies the RF power to the plasma electrode 20.

In addition, the central portion of the plasma electrode 20 is in communication with the gas supply pipe 26 for supplying the source gas for the substrate processing process.

The matching member 22 is connected between the plasma electrode 20 and the RF power supply 24 to match the load impedance and the source impedance of the RF power supplied from the RF power supply 24 to the plasma electrode 20.

The susceptor 30 supports a plurality of substrates W installed in the chamber 10 and loaded from the outside. The susceptor 30 is an opposing electrode facing the plasma electrode 20, and is electrically grounded through the lifting shaft 32 for elevating the susceptor 30.

The lifting shaft 32 is lifted up and down by a lifting device (not shown). At this time, the lifting shaft 32 is wrapped by the bellows 34 sealing the lifting shaft 32 and the bottom surface of the chamber 10.

The gas injection means 40 is installed below the plasma electrode 20 so as to face the susceptor 30. At this time, a gas diffusion space 42 through which the source gas supplied from the gas supply pipe 26 penetrating the plasma electrode 20 is formed between the gas injection means 40 and the plasma electrode 20. The gas injection means 40 uniformly injects the source gas to the entire portion of the reaction space through the plurality of gas injection holes 44 communicated with the gas diffusion space 42.

Such a general substrate processing apparatus loads the substrate W into the susceptor 30, and then sprays a predetermined source gas into the reaction space of the chamber 10 and supplies RF power to the plasma electrode 20. By forming an electromagnetic field in the reaction space, a predetermined thin film on the substrate W is formed by using a plasma formed on the substrate W by the electromagnetic field.

However, the general substrate processing apparatus has the following problems because the space where the source gas is injected and the space where the plasma is formed are the same.

First, there is a difficulty in making the density of the plasma formed on the substrate uniform, which makes it difficult to control the film quality of the thin film material.

Second, since the source gas is injected to all regions on the substrate, the use efficiency of the source gas is lowered.

Third, a thin film material is deposited at the gas injection hole of the gas injection means, and the particles may cause process defects.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and has a substrate processing apparatus and a substrate processing method using the same, in which the source gas and the reactive gas are spatially separated and sprayed onto the substrate to increase the deposition uniformity of the thin film deposited on the substrate. It is technical problem to provide.

In addition, another object of the present invention is to provide a substrate processing apparatus and a substrate processing method using the same to increase the use efficiency of the source gas and to minimize the deposition of the thin film material on the gas injection hole.

The substrate processing apparatus according to the present invention for achieving the above technical problem is a process chamber; A substrate support part installed in the process chamber to support a plurality of substrates and rotating in a predetermined direction; A chamber lid covering an upper portion of the process chamber to face the substrate support; And a gas injection unit having a plurality of gas injection modules inserted into the chamber lid at regular intervals and injecting different first and second gases onto a substrate, wherein each of the plurality of gas injection modules includes the first gas. A first gas injection space for spraying; A second gas injection space for injecting the second gas; And a gas hole pattern member installed in the second gas injection space to prevent the first gas injected from the first gas injection space from flowing into the second gas injection space.

Each of the plurality of gas injection modules may activate and inject the first gas supplied to the first gas injection space.

Each of the plurality of gas injection modules may include: a ground electrode frame having the first and second gas injection spaces spaced apart from each other; And a plasma electrode inserted into the first gas injection space to electrically insulate the ground electrode frame, thereby generating a plasma in the first gas injection space to activate the first gas. The second gas, which is installed or integrated in the ground electrode frame to cover the lower surface of the second gas injection space and is supplied to the second gas injection space, is injected at a pressure higher than the injection pressure of the first gas.

The substrate processing apparatus may further include gas activation supply means for activating the second gas using a plasma to supply the second gas to the second gas injection space.

Each of the plurality of gas injection modules may activate and inject the second gas supplied to the second gas injection space.

Each of the plurality of gas injection modules may include: a ground electrode frame having the first and second gas injection spaces spaced apart from each other; A first plasma electrode inserted into the first gas injection space so as to be electrically insulated from the ground electrode frame to generate a plasma in the first gas injection space to activate the first gas; And a second plasma electrode inserted into the second gas injection space so as to be electrically insulated from the ground electrode frame to generate a plasma in the second gas injection space to activate the second gas. The member is installed or integrated in the ground electrode frame to cover the lower surface of the second gas injection space to inject the activated second gas.

The gas hole pattern member may include a plurality of gas injection holes formed to communicate with the second gas injection space to inject the second gas at a pressure higher than the injection pressure of the first gas.

The injection amount of the second gas injected onto the substrate through the gas hole pattern member is gradually increased from the inside of the gas injection module adjacent to the center of the substrate support to the outside of the gas injection module adjacent to the edge of the substrate support. Can increase.

The injection amount of the second gas is smaller than the injection amount of the first gas.

The gas hole pattern member may be formed of an insulating plate having no polarity. The gas hole pattern member may have a gas injection hole for adjusting the injection amount of the second gas by the diameter of the gas hole pattern.

According to another aspect of the present invention, there is provided a substrate processing method comprising: seating a plurality of substrates at regular intervals on a substrate support installed in a process chamber; Rotating the substrate support on which the plurality of substrates are seated; And injecting different first and second gases onto the substrate through the first and second gas injection spaces, which are spatially separated from each of the plurality of gas injection modules disposed at regular intervals on the substrate support. In the step of injecting the first and second gas on the substrate, the second gas is a gas hole pattern member provided in the second gas injection space is the first gas to the second gas injection space It can be sprayed onto the substrate to prevent flow.

The first gas may be activated by the plasma generated in the first gas injection space and injected onto the substrate.

Injecting the first and second gases onto the substrate may include activating the second gas using a plasma and supplying the activated second gas to the second gas injection space.

The second gas may be activated by the plasma generated in the second gas injection space and injected onto the substrate.

The second gas may be injected onto the substrate to have a pressure higher than the injection pressure of the first gas by a plurality of gas injection holes formed in the gas hole pattern member to communicate with the second gas injection space.

The injection amount of the second gas injected onto the substrate through the plurality of gas injection holes increases from the inside of each gas injection module adjacent to the center of the substrate support toward the outside of the gas injection module adjacent to the edge of the substrate support. can do.

The second gas may be a source gas including a thin film material to be formed on the substrate, and the first gas may be a reaction gas for forming a thin film on the substrate by reacting with a second gas injected onto the substrate.

The second gas may be a mixed gas in which at least one kind of a purge gas for purging the first and second gases and a dopant gas to be doped into the thin film and the source gas are mixed.

According to the above solution, the substrate processing apparatus and the substrate processing method according to the present invention inject the second gas and the first gas through each of the plurality of gas injection modules arranged to spatially divide the reaction space to each substrate. By depositing the thin film, the deposition uniformity, deposition rate and deposition efficiency of the thin film can be improved, and the film quality of the thin film can be easily controlled. The gas hole pattern member of each gas injection module can be used to increase the use efficiency of the source gas and the thin film material. It is possible to minimize deposition on the gas injection hole and the gas injection space.

1 is a diagram schematically illustrating a general substrate processing apparatus.
2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
3 is a view conceptually illustrating a plurality of gas injection modules disposed in the substrate support illustrated in FIG. 2.
4 is a cross-sectional view illustrating an embodiment of a plurality of gas injection modules illustrated in FIG. 2.
FIG. 5 is a plan view illustrating the gas hole pattern member illustrated in FIG. 4.
FIG. 6 is a plan view illustrating another embodiment of the gas hole pattern member illustrated in FIG. 4.
7 is a cross-sectional view illustrating another exemplary embodiment of the plurality of gas injection modules illustrated in FIG. 2.
FIG. 8 is a cross-sectional view illustrating a plurality of gas injection modules illustrated in FIG. 2 as a diagram for describing a substrate processing apparatus according to another exemplary embodiment.
9 is a view for explaining a modification of the second gas injected from each gas injection module of the substrate processing apparatus according to the embodiment of the present invention.
FIG. 10 is a diagram illustrating the size of silicon particles formed by a silicon-based source gas and the size of silicon particles formed by the dopant gas and a silicon-based source gas.
11 is a view for explaining another modified example of the second gas injected from each gas injection module of the substrate processing apparatus according to the embodiment of the present invention.
12 is a view for explaining another modified example of the second gas injected from each gas injection module of the substrate processing apparatus according to the embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a diagram schematically illustrating a substrate processing apparatus according to an exemplary embodiment of the present disclosure, and FIG. 3 is a diagram conceptually illustrating a plurality of gas injection modules disposed in the substrate support illustrated in FIG. 2, and FIG. 4 is a diagram of FIG. 2. A cross-sectional view illustrating an embodiment of a plurality of gas injection modules shown in FIG.

2 to 4, a substrate processing apparatus according to an embodiment of the present invention includes a process chamber 110, a chamber lid 115, a substrate support 120, and a gas injector 130. It is configured by.

The process chamber 110 provides a reaction space for a substrate processing process (eg, a thin film deposition process). The bottom surface or the side surface of the process chamber 110 may be in communication with an exhaust pipe (not shown) for exhausting the gas of the reaction space.

The chamber lid 115 is installed on the process chamber 110 to cover the top of the process chamber 110 and is electrically grounded. The chamber lid 115 supports the gas injector 130, and includes a plurality of module mounting portions 115a, 115b, 115c, and 115d formed to divide the upper portion of the substrate support 120 into a plurality of spaces. Is done. In this case, the plurality of module installation units 115a, 115b, 115c, and 115d may be radially formed in the chamber lid 115 so as to be spaced in units of 90 degrees so as to be symmetrical in a diagonal direction with respect to the center point of the chamber lid 115. have.

In FIG. 2, the chamber lid 115 is shown as having four module mounting portions 115a, 115b, 115c, 115d, but is not limited thereto, and the chamber lid 115 is 2N symmetrical with respect to the center point. However, N may be provided with module installation parts. At this time, each of the plurality of module mounting portion is provided to be mutually symmetrical in the diagonal direction with respect to the center point of the chamber lead 115. Hereinafter, it will be assumed that the chamber lid 115 includes the first to fourth module mounting portions 115a, 115b, 115c, and 115d.

The reaction space of the process chamber 110 sealed by the chamber lid 115 described above is connected to an external pumping means (not shown) through a pumping tube 117 installed in the chamber lid 115.

The pumping pipe 117 is in communication with the reaction space of the process chamber 110 through the pimping hole 115e formed in the center of the chamber lid 115. Accordingly, the inside of the process chamber 110 is in a vacuum state or an atmospheric pressure state according to the pumping operation of the pumping means through the pumping pipe 117. On the other hand, the exhaust space of the reaction space can be more easily performed using the upper central exhaust method using the pumping pipe 117 and the pumping hole (115e).

The substrate support part 120 is rotatably installed in the process chamber 110 and electrically floated. The substrate support part 120 is supported by a rotating shaft (not shown) penetrating the center bottom surface of the process chamber 110. The rotation shaft rotates in response to the driving of the shaft driving member (not shown) to rotate the substrate support part 120 in a predetermined direction (for example, counterclockwise direction). In addition, the rotating shaft exposed to the outside of the lower surface of the process chamber 110 is sealed by a bellows (not shown) installed on the lower surface of the process chamber 110.

The substrate support part 120 supports at least one substrate W loaded from an external substrate loading device (not shown). In this case, the substrate support part 120 has a disc shape, and may be a plurality of substrates W, for example, a semiconductor substrate or a wafer. In this case, in order to improve the productivity of the substrate processing process, the substrate support part 120 may be disposed in a circle shape such that the plurality of substrates W have a predetermined interval.

The gas injection unit 130 is inserted into and installed in each of the first to fourth module mounting units 115a, 115b, 115c, and 115d of the chamber lid 115, and has an X and Y axes based on the center point of the substrate support unit 120. And first to fourth gas injection modules 130a, 130b, 130c, and 130d disposed to be symmetrical with each other in the direction. Each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d is separated at regular intervals such that the substrate support 120 and the gas injection modules 130a, 130b, 130c, and 130d overlap each other. The first and second gases G1 and G2 are injected only in the region. Accordingly, the first and second gases G1 and G2 injected from the adjacent first to fourth gas injection modules 130a, 130b, 130c, and 130d are injected into the respective gas injection regions on the substrate support 120 to be spatially spaced. Separated by. On the other hand, the first and second gases G1 and G2 injected from the respective gas injection modules 130a, 130b, 130c, and 130d are injected close to each other in the gas injection region. At this time, the first gas G1 is activated by the plasma and injected onto the substrate W.

The second gas G2 may be a source gas SG including a thin film material to be deposited on the substrate W. The source gas may include a thin film material such as silicon (Si), titanium group elements (Ti, Zr, Hf, etc.), or aluminum (Al). For example, the source gas containing a thin film of silicon (Si) may be Tetraethylorthosilicate (TEOS), Dichlorosilane (DCS), Hexachlorosilane (HCD), Tri-dimethylaminosilane (TriDMAS), Trisilylamine (TSA), SiH2Cl2, SiH4, Si2H6. , Si3H8, Si4H10, and Si5H12.

The first gas may be made of a reactive gas RG that reacts with the above-described source gas SG so that the thin film material contained in the source gas SG is deposited on the substrate W. For example, the reaction gas RG may include at least one kind of gas selected from nitrogen (N 2), oxygen (O 2), nitrogen dioxide (N 2 O), and ozone (O 3).

Each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d includes a ground electrode frame 210, a gas hole pattern member 230, an insulation member 240, and a plasma electrode 250. do.

The ground electrode frame 210 is formed to have a first gas injection space S1 for injecting the first gas G1 and a second gas injection space S2 for injecting the second gas G2. The ground electrode frame 210 is inserted into and installed in each module installation unit 115a, 115b, 115c, or 115d of the chamber lead 115 to be electrically grounded through the chamber lead 115. To this end, the ground electrode frame 210 is composed of a top plate 210a, ground sidewalls 210b, and a ground partition member 210c.

The upper plate 210a is formed in a rectangular shape and is coupled to the corresponding module mounting portions 115a, 115b, 115c, and 115d of the chamber lid 115. An insulating member support hole 212, a first gas supply hole 214, and a second gas supply hole 216 are formed in the upper plate 210a.

The insulating member support hole 212 is formed through the upper plate 210a to communicate with the first gas injection space S1. The insulating member support hole 214 may be formed to have a rectangular plane.

The first gas supply hole 214 is formed through the upper plate 210a to communicate with the first gas injection space S1. The first gas supply hole 214 is connected to an external first gas supply means (not shown) through a gas supply pipe (not shown), so that the first gas supply hole 214 is connected to the first gas supply pipe (not shown) by the first gas supply pipe. The gas G1, that is, the reaction gas is supplied. The first gas supply hole 214 may be formed in plural so as to have a predetermined interval on both sides of the insulating member support hole 212 and communicate with the first gas injection space S1. The first gas G1 supplied to the first gas supply hole 214 is supplied to the first gas injection space S1 and diffused in the first gas injection space S1 to the substrate to have a first pressure. Sprayed downward. To this end, a lower surface of the first gas injection space S1 serves as a first gas injection hole 231 having a shape of opening through a passage without a separate gas injection hole pattern so that the first gas G1 is injected downward toward the substrate. Do it.

The second gas supply hole 216 is formed through the top plate 210a to communicate with the second gas injection space S2. The second gas supply hole 216 is connected to an external second gas supply means (not shown) through a gas supply pipe (not shown), so that the second gas supply hole 216 is connected to a second gas supply pipe (not shown) through a gas supply pipe. Gas G2, that is, the source gas is supplied. The second gas supply holes 216 may be formed in plural so as to have a predetermined interval in the upper plate 210a and communicate with the second gas injection space S2.

Each of the ground sidewalls 210b protrudes vertically to have a predetermined height from the lower side of the long side and the short side of the upper plate 210a to provide a lower surface opening of a rectangular shape in the lower portion of the upper plate 210a. Each of the ground sidewalls 210b is electrically grounded through the chamber lead 115 to serve as a ground electrode. The distance (or spacing) between the ground sidewalls 210b and the substrate W is preferably set in a range of 10 to 25 mm.

The ground partition wall member 210c protrudes vertically from the central lower surface of the top plate 210a to have a predetermined height and is disposed in parallel with the long sides of the ground sidewalls 210b. The ground partition wall member 210c provides the first and second gas injection spaces S1 and S2 that are spatially separated from the lower surface opening provided by the ground sidewalls 210b. The first and second gas injection spaces S1 and S2 are formed side by side with the ground partition member 210c at the center to inject two different gases in a small space, or between the ground partition members. It is possible to generate plasma in two different spaces. As such, the ground partition member 210c is integrally or electrically coupled to the ground electrode frame 210 to be electrically grounded through the ground electrode frame 210 to serve as a ground electrode.

In the above description of the ground electrode frame 210, the ground electrode frame 210 has been described as being composed of an upper plate 210a, ground sidewalls 210b, and a ground partition member 210c, but is not limited thereto. The electrode frame 210 may be formed as a single body in which the upper plate 210a, the ground sidewalls 210b, and the ground partition member 210c are integrated with each other.

Meanwhile, each of the first and second gas injection spaces S1 and S2 of the ground electrode frame 210 may be the first to fourth gas injection modules 130a, 130b, 130c, and 130d disposed on the substrate support 120. ) Can be changed according to each position. That is, the positions of the first and second gas injection spaces S1 and S2 are the first gas after the substrate W, which rotates according to the rotation of the substrate support part 120, is first exposed to the second gas G2. It is set to correspond to the position of each gas injection module 130a, 130b, 130c, 130d and the rotation direction of the board | substrate support part 120 so that it may expose to G1.

The gas hole pattern member 230 is installed in the second gas injection space S2 so that the first gas G1 injected from the adjacent first gas injection space S1 with the ground partition member 210c interposed therebetween is formed. The diffusion, backflow, and penetration into the two gas injection spaces S2 are prevented. In this case, when the first gas G1 diffuses, flows back, and penetrates into the second gas injection space S2, the first gas G1 and the second gas in the second gas injection space S2. (G2) reacts, thereby causing an abnormal thin film to be deposited on the inner wall of the second gas injection space S2 or an abnormal thin film of a powder component to form particles falling on the substrate.

The gas hole pattern member 230 may be disposed on the bottom surfaces of each of the ground sidewalls 210b and the ground partition wall member 210c that provide the second gas injection space S2 to cover the bottom surface of the second gas injection space S2. It may be integrated or formed in the form of an insulating plate (or shower head) made of an insulating material having no polarity and may be coupled to the bottom surface of the second gas injection space S2. Accordingly, a predetermined gas diffusion space or gas buffering space is provided in the second gas injection space S2 between the upper plate 210a of the ground electrode frame 210 and the gas hole pattern member 230.

The gas hole pattern member 230 includes a plurality of second gas injection holes 232 which downwardly inject the second gas G2 supplied to the second gas injection space S2 toward the substrate through the second gas supply hole 216. It is configured to include).

The plurality of second gas injection holes 232 are formed in a hole pattern shape so as to communicate with the second gas injection space S2 through which the second gas G2 is diffused, thereby converting the second gas G2 into the first gas. Down injection is performed toward the substrate to have a second pressure higher than the injection pressure of (G1). In this case, since the second gas G2 is injected through the second gas injection hole 232 formed in the shape of a hole pattern, the injection of the first gas G1 injected through the first gas injection hole 231 in which the hole pattern is not formed. Since the diameter through which the gas is injected is smaller than the pressure, it is injected onto the substrate to have a high pressure. For this reason, the gas hole pattern member 230 may be the first gas G1 injected from the first gas injection space S1 through the injection pressure of the second gas G2 injected on the substrate, and the second gas may be injected. To prevent diffusion, backflow, and penetration into space S2. In addition, the gas hole pattern member 230 injects the second gas G2 downward through the second gas injection hole 232, and delays the second gas G2 due to the plate shape in which the hole is formed. The amount of the second gas G2 can be reduced by stagnation. In addition, the flow rate of the gas can be adjusted by adjusting the hole pattern shape of the gas injection port 232, thereby increasing the use efficiency of the second gas G2.

As shown in FIG. 5A, the plurality of second gas injection holes 232 according to an embodiment may be disposed in a lattice form at regular intervals, or as shown in FIG. 5B. Likewise, it may be arranged in a staggered form along the longitudinal direction of the gas injection module.

As illustrated in FIG. 6, the plurality of second gas injection holes 232 according to another embodiment may include the second gas G2 injected to the substrate W based on the angular velocity according to the rotation of the substrate support part 120. Can be arranged to compensate for the injection amount. That is, the inner region of the substrate W adjacent to the center of the substrate support 120 has a faster angular velocity than the outer region of the substrate W adjacent to the edge of the substrate support 120. Accordingly, when the injection amount of the second gas G2 is uniform in the length (or long side) direction of each gas injection module, the thin film deposited on the inner region of the substrate W and the outer region of the substrate W are deposited. The thickness of the thin film becomes nonuniform. Accordingly, the present invention forms the plurality of second gas injection holes 232 such that the injection amount of the second gas G2 increases from the inner side 130i of each gas injection module toward the outer side 130o of each gas injection module. And by disposing the thickness unevenness of the thin film according to the angular velocity.

As an example, as shown in FIG. 6A, the intervals i1, i2, i3, i4, between the adjacent second gas injection holes 232 formed along the length (or long side) direction of each gas injection module. i5) may decrease from the inner side 130i of each gas injection module to the outer side 130o of each gas injection module.

As another example, as shown in FIG. 6B, the number of the second gas injection holes 232 formed along the length (or long side) direction of each gas injection module is equal to the inner side 130i of each gas injection module. Increasing toward the outside (130o) of each gas injection module in the. In this case, the distance between the second gas injection holes 232 may decrease from the inner side 130i of each gas injection module toward the outer side 130o of each gas injection module.

As another example, as shown in (c) of FIG. 6, the diameters d1, d2, d3, d4, of the second gas injection holes 232 formed along the length (or long side) direction of each gas injection module. d5) may increase from the inner side 130i of each gas injection module to the outer side 130o of each gas injection module. In this case, the distance between the second gas injection holes 232 may decrease from the inner side 130i of each gas injection module toward the outer side 130o of each gas injection module.

As another example, as shown in FIG. 6D, the second gas injection holes 232 are formed in a slit form parallel to the short side direction of each gas injection module, and the length of each gas injection module is different. The lengths of the second gas injection holes 232 formed along the (or long side) direction may increase from the inner side 130i of each gas injection module to the outer side 130o of each gas injection module. In this case, the distance between the second gas injection holes 232 may decrease from the inner side 130i of each gas injection module toward the outer side 130o of each gas injection module.

The second gas injection hole 232 described above may be narrower than the first gas injection hole to adjust the amount of injected gas to the diameter of the second gas injection hole 232. The diameter of the second gas injection hole 232 may be narrower than that of the first gas injection hole, so that the second gas injection hole 232 injects a source gas, which is a relatively small amount of the second gas, and the first gas injection hole is This is because the reaction gas which is a relatively larger amount of the first gas than the source gas is injected.

The insulating member 240 is made of an insulating material and inserted into the insulating member support hole 212 formed in the ground electrode frame 210 and is coupled to the upper surface of the ground electrode frame 210 by a fastening member (not shown). The insulating member 240 includes an electrode insertion hole in communication with the first gas injection space S1.

The plasma electrode 250 is made of a conductive material and is inserted through the electrode insertion hole of the insulating member 240 to protrude to a predetermined height from the lower surface of the ground electrode frame 210 so that the plasma electrode 250 is disposed in the first gas injection space S1. In this case, the plasma electrode 250 may protrude to the same height as each of the sidewalls 210b of the ground partition wall member 210c and the ground electrode frame 210.

The plasma electrode 250 is electrically connected to the plasma power supply 140 through a feed cable to generate plasma in the first gas injection space S1 according to the plasma power supplied from the plasma power supply 140. That is, the plasma is generated between each of the ground sidewall 210b and the ground partition member 210c serving as the ground electrode and the plasma electrode 250 to which the plasma power is supplied, thereby being supplied to the first gas injection space S1. The first gas G1 is activated. Accordingly, the activated first gas PG1 may be injected downward from the first gas injection space S1 by the flow rate (or flow) of the first gas G1 supplied to the first gas injection space S1. Can be.

The plasma power supply unit 140 generates plasma power having a predetermined frequency, and supplies the plasma power to each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d through a feed cable or separately. Supply. In this case, the plasma power is supplied with high frequency (eg, High Frequency (HF) power or Very High Frequency (VHF) power. For example, the HF power has a frequency in the range of 3 MHz to 30 MHz, and the VHF power is It may have a frequency in the range of 30MHz to 300MHz.

On the other hand, an impedance matching circuit (not shown) is connected to the feed cable.

The impedance matching circuit matches the load impedance and the source impedance of the plasma power source supplied from the plasma power supply unit 140 to each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d. The impedance matching circuit may be composed of at least two impedance elements (not shown) composed of at least one of a variable capacitor and a variable inductor.

Each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d described above generates a plasma in the first gas injection space S1 according to the plasma power supplied to the plasma electrode 250 to inject the first gas. The first gas G1 of the space S1 is activated and injected downward, and the second gas G2 of the second gas injection space S2 is injected downward through a gas hole pattern member 230 at a predetermined pressure. do. In this case, each of the gas injection modules 130a, 130b, 130c, and 130d uses the gas hole pattern member 230 to activate the first gas PG1 sprayed downward from the first gas injection space S1. By preventing backflow (or penetration) into the space S2, the second gas G2 and the activated first gas PG1 react within the second gas injection space S2, thereby causing the second gas injection space S2 to react. To prevent the thin film material from being deposited on the inner wall.

As such, the substrate processing apparatus 100 and the substrate processing method using the same according to an embodiment of the present invention load the plurality of gas injection modules 130a, 130b, 130c, and 130d on the substrate support 120 at regular intervals. 4, the second gas G2 is rotated through each gas injection module while rotating the substrate support part 120 loaded with the plurality of substrates W in a predetermined direction (for example, a counterclockwise direction). ) And the activated first gas PG1 are sprayed downward on the rotated substrate support 120. Accordingly, each gas injection module 130a, 130b, 130c, 130d from each gas injection module 130a, 130b, 130c, 130d passing through the lower portion of each gas injection module 130a, 130b, 130c, 130d in accordance with the rotation of the substrate support 120 is formed. A predetermined thin film material is deposited by mutual reaction between the injected second gas G2 and the activated first gas PG1. In this case, the second gas G2 and the activated first gas PG1 are injected close through the first and second gas injection spaces S1 and S2 formed adjacent to each of the gas injection modules, thereby causing the second gas. (G2), i.e., the source gas reacts with the activated first gas PG1 to react faster and decomposes efficiently without loss.

The substrate processing apparatus 100 and the substrate processing method using the same according to the embodiment of the present invention as described above are provided through a plurality of gas injection modules 130a, 130b, 130c, and 130d arranged to spatially divide the reaction space. By depositing a thin film on each substrate W by injecting 2 gases G2 and the activated first gas PG1, the deposition uniformity, deposition rate, and deposition efficiency of the thin film can be improved, and the film quality of the thin film can be easily controlled. In addition, the gas hole pattern members 230 of each gas injection module can increase the use efficiency of the source gas and minimize the deposition of the thin film material into the gas injection hole and the gas injection space.

7 is a cross-sectional view illustrating another exemplary embodiment of the plurality of gas injection modules illustrated in FIG. 2.

Referring to FIG. 7 and FIG. 2, each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d according to another embodiment activates each of the aforementioned first and second gases G1 and G2. And spraying downward onto the substrate W, the ground electrode frame 410, the gas hole pattern member 230, the first and second insulating members 440 and 442, and the first and second plasma electrodes 450, 452).

The ground electrode frame 410 is formed to have a first gas injection space S1 for injecting the first gas G1 and a second gas injection space S2 for injecting the second gas G2. The ground frame 410 is inserted into and installed in each module installation unit 115a, 115b, 115c, 115d of the chamber lead 115 and is electrically grounded through the chamber lead 115. To this end, the ground frame 410 is composed of a top plate 410a, ground sidewalls 410b, and a ground partition wall member 410c.

The top plate 410a is formed in a rectangular shape and is coupled to the corresponding module mounting portions 115a, 115b, 115c, and 115d of the chamber lid 115. The upper plate 410a is provided with a first insulating member support hole 412, a first gas supply hole 414, a second insulating member support hole 415, and a second gas supply hole 416.

The first insulating member support hole 412 is formed through the top plate 410a to communicate with the first gas injection space S1. The first insulating member support hole 412 may be formed to have a rectangular plane.

The first gas supply hole 414 is formed through the upper plate 410a to communicate with the first gas injection space S1. The first gas supply hole 414 is connected to an external first gas supply means (not shown) through a gas supply pipe (not shown), so that the first gas supply hole 414 is connected to the first gas supply pipe (not shown) by the first gas supply pipe. The gas G1, that is, the reaction gas is supplied. The first gas supply holes 414 may be formed in plural so as to have a predetermined interval on both sides of the first insulating member support hole 412 to communicate with the first gas injection space S1. The first gas G1 supplied to the first gas supply hole 414 is supplied to the first gas injection space S1 and diffused in the first gas injection space S1 to the substrate to have a first pressure. Sprayed downward. To this end, a lower surface of the first gas injection space S1 serves as a first gas injection hole 231 having a shape of opening through a passage without a separate gas injection hole pattern so that the first gas G1 is injected downward toward the substrate. Do it.

The second insulating member support hole 415 is formed through the top plate 410a to communicate with the second gas injection space S2. The second insulating member support hole 415 may be formed to have a plane having a rectangular shape.

The second gas supply hole 416 is formed through the upper plate 410a to communicate with the second gas injection space S2. The second gas supply hole 416 is connected to an external second gas supply means (not shown) through a gas supply pipe (not shown), thereby providing a second gas supply pipe from the second gas supply means (not shown). Gas G2, that is, the source gas is supplied. The second gas supply holes 416 may be formed in plural so as to have a predetermined interval on both sides of the second insulating member support hole 415 to communicate with the second gas injection space S2.

The ground sidewalls 410b and the ground partition wall member 410c protrude vertically from the top plate 410a to have a predetermined height as in FIG. 4, so that the first and second gas injections are applied to the ground electrode frame 410. Spaces S1 and S2 are provided.

The gas hole pattern member 230 is installed at a lower surface of the second gas injection space S2, and the first gas G1 injected from the adjacent first gas injection space S1 with the ground partition member 410c interposed therebetween. Is prevented from diffusing, backflowing and penetrating into the second gas injection space S2. As described above, since the gas hole pattern member 230 includes a plurality of second gas injection holes 232 as illustrated in FIGS. 5 and 6, overlapping description of the second gas injection holes 232 will be described. It will be omitted.

The first insulating member 440 is made of an insulating material and inserted into the first insulating member support hole 412 formed in the ground frame 410, and is coupled to the upper surface of the ground frame 410 by a fastening member (not shown). . The first insulating member 440 includes a first electrode insertion hole communicating with the first gas injection space S1.

The first plasma electrode 450 is made of a conductive material and is inserted through the first electrode insertion hole of the first insulating member 440 to protrude to a predetermined height from the lower surface of the ground frame 410 so that the first gas injection space S1 is formed. Is placed on. As described above, the first plasma electrode 450 is electrically connected to the above-described plasma power supply unit 140 through the above-described power supply cable, and according to the plasma power supply unit supplied from the plasma power supply unit 140. The plasma is generated in the gas injection space S1.

The second insulating member 442 is made of an insulating material and is inserted into the second insulating member support hole 415 formed in the ground frame 410 and is coupled to the upper surface of the ground frame 410 by a fastening member (not shown). . The second insulating member 442 includes a second electrode insertion hole communicating with the second gas injection space S2.

The second plasma electrode 452 is made of a conductive material and is inserted through the second electrode insertion hole of the second insulating member 442 to protrude to a predetermined height from the lower surface of the ground frame 410 so that the second gas injection space S2 is formed. Is placed on. In this case, the second plasma electrode 452 may protrude to be spaced apart from the gas hole pattern member 230 by a predetermined height. This is because the voltage difference between the second plasma electrode 452 and the gas hole pattern member 230 when the second plasma electrode 452 is disposed in the second gas injection space S2 so as to be close to the gas hole pattern member 230. This is because arcing by may occur. In addition, when the second plasma electrode 452 is in contact with the gas hole pattern member 230, the gas hole pattern member 230 may not serve as a ground and there is no voltage difference, and thus plasma is not generated well.

The second plasma electrode 452 is electrically connected to the plasma power supply 142 through a feed cable to generate plasma in the second gas injection space S2 according to the plasma power supplied from the plasma power supply 142. . That is, the plasma is generated between each of the ground sidewall 410b and the ground partition member 410c serving as the ground electrode, and the second plasma electrode 452 to which the plasma power is supplied to the second gas injection space S2. The second gas G2 supplied is activated. Accordingly, the activated second gas PG2 may be injected downward at a predetermined pressure by the second gas injection hole 232 of the gas hole pattern member 230.

As described above, each of the first to fourth gas injection modules 130a, 130b, 130c, and 130d according to another embodiment may include the first and second gas injection spaces according to the plasma power supplied to the plasma electrode 250. Plasma is generated in each of S1 and S2 to activate each of the first and second gases G1 and G2 in each of the first and second gas injection spaces S1 and S2 to downwardly inject and simultaneously form a gas hole pattern member. The second gas G2 of the second gas injection space S2 is injected downward through the 230 at a predetermined pressure. In this case, each of the gas injection modules 130a, 130b, 130c, and 130d uses the gas hole pattern member 230 to activate the first gas PG1 sprayed downward from the first gas injection space S1. By preventing backflow, diffusion, and penetration into the space S2, the first and second gases PG1 and PG2 activated inside the second gas injection space S2 react to react with the second gas injection space S2. It prevents the thin film material from being deposited on the inner wall.

As described above, the substrate processing apparatus and the substrate processing method using the same according to another embodiment of the present invention including the first to fourth gas injection modules 130a, 130b, 130c, and 130d according to another embodiment may include a second gas G2. Since it is the same as the above-described substrate processing method except for activating and spraying on the substrate (W), duplicate description thereof will be omitted.

The substrate processing apparatus and the substrate processing method using the same according to another embodiment of the present invention as described above are activated by each of the plurality of gas injection modules 130a, 130b, 130c, and 130d arranged to spatially divide the reaction space. By spraying the second gas (PG1, PG2) to deposit a thin film on each substrate (W) to further improve the deposition uniformity, deposition rate and deposition efficiency of the thin film, it is easy to control the film quality of each thin film, each gas injection The gas hole pattern member 230 of the module may be used to increase the use efficiency of the source gas and to minimize the deposition of the thin film material into the gas injection hole and the gas injection space.

FIG. 8 is a cross-sectional view illustrating a plurality of gas injection modules illustrated in FIG. 2 as a diagram for describing a substrate processing apparatus according to still another exemplary embodiment.

8, the substrate processing apparatus according to another embodiment of the present invention may include a process chamber 110, a chamber lid 115, a substrate support 120, a gas injector 130, and gas activation. It comprises a supply means (260). In the substrate processing apparatus having such a configuration, the remaining components except for the gas activation supply means 260 are the same as those of the substrate processing apparatus illustrated in FIGS. 2 to 6, and thus, redundant description of the same components will be omitted.

The gas activation supply means 260 activates the second gas G2 supplied from the second gas supply means (not shown), and activates the second gas PG activated through the gas supply pipe 262 as described above. To the second gas injection space S2 of each of the fourth to fourth gas injection modules 130a, 130b, 130c, and 130d. The gas activation supply means 260 may activate the second gas G2 supplied based on the remote plasma generation method.

As described above, the substrate processing apparatus according to another embodiment of the present invention activates the second gas G2 by using the gas activation supply means 260, and supplies the activated second gas PG2 to each gas injection module 130a. , 130b, 130c, and 130d are the same as the above-described substrate processing method except that they are sprayed onto the substrate W, and thus redundant description thereof will be omitted.

The substrate processing apparatus and the substrate processing method using the same according to another embodiment of the present invention as described above are activated by each of the plurality of gas injection modules 130a, 130b, 130c, and 130d arranged to spatially divide the reaction space. And depositing a thin film on each substrate W by injecting the second gases PG1 and PG2 to further improve the deposition uniformity, the deposition rate, and the deposition efficiency of the thin film, and to easily control the film quality of each thin film. The gas hole pattern member 230 of the injection module can increase the use efficiency of the source gas and minimize the deposition of the thin film material into the gas injection hole and the gas injection space.

As described above, in the substrate processing apparatus according to the embodiments of the present invention, the thin film material is deposited on the substrate using the first and second gases G1 and G2, that is, the reaction gas RG and the source gas SG. Although not limited thereto, a thin film material may be deposited on a substrate using the mixed gas obtained by mixing the above-described source gas SG and another gas and the reaction gas RG.

For example, as illustrated in FIG. 9, the above-described second gas G2 may include at least one kind of gas PG, which is a purge gas PG and a dopant gas DG. DG) and the source gas SG may be mixed gases SG + PG, SG + DG, and SG + DG + PG. In this case, the purge gas PG is used to purge the source gas remaining without being deposited on the substrate W and / or the remaining source gas without reacting with the reactive gas, and include nitrogen (N 2), argon (Ar), and xenon ( Ze) and helium (He). The dopant gas DG includes a dopant to be doped into the thin film material, and may be C2H4, NH3, PH3, or B2H6. In this case, the dopant gas DG may be formed by mixing any one kind of gas among C2H4 and NH3 and one kind of gas among PH3 and B2H6.

In the case of depositing a thin film material on a substrate using the mixed gas (SG + PG) and the reactive gas (RG) in which the source gas (SG) and the purge gas (PG) are mixed, the purge gas (PG) The film quality of the thin film material is improved by removing source gas remaining without being deposited on the substrate W and / or remaining source gas without reacting with the reactive gas.

The mixed gas SG + DG and the reaction gas RG in which the source gas SG and the dopant gas DG are mixed may be used in a thin film deposition process of forming a polysilicon thin film on a substrate. In this case, the composition ratio of each of the source gas SG and the dopant gas DG with respect to the reaction gas RG may be variously set according to the film quality, particle size, and conductivity characteristics of the polysilicon thin film. In this case, when the polysilicon thin film is formed as a capping layer, the composition ratio of the dopant gas DG is set such that the doping concentration of the dopant doped into the polysilicon thin film is high. In addition, when forming the nano polysilicon thin film, the composition ratio of the dopant gas (DG) is set so that the doping concentration of the dopant doped in the polysilicon thin film is low.

For example, a polysilicon thin film may be formed on a substrate by using a dopant gas (DG) including any one of C 2 H 4 and NH 3 and a second gas (G 2) mixed with a silicon-based source gas (SG). When formed, C or N of the dopant gas DG interferes with the growth of the silicon particles, thereby reducing the size of the silicon particles.

FIG. 10 is a diagram illustrating the size of silicon particles formed by silicon source gas SG and the size of silicon particles formed by the dopant gas DG and silicon source gas SG.

As shown in FIG. 10A, the size of the silicon particles formed by the silicon source gas SG is determined by the dopant gas DG and the silicon source gas SG as shown in FIG. 10B. It can be seen that larger than the silicon particles formed. Therefore, when the polysilicon thin film is formed using the second gas G2 in which the source gas and the dopant gas are mixed, the size of the silicon particles may be reduced.

Meanwhile, the substrate processing apparatus and the substrate processing method using the same according to the above embodiments have been described in that each of the plurality of gas injection modules 130a, 130b, 130c, and 130d injects the same gas, but is not limited thereto.

For example, as illustrated in FIG. 11, some of the gas injection modules 130a and 130c of the plurality of gas injection modules 130a, 130b, 130c, and 130d may be formed of the source gas SG and the dopant gas. A second gas (G2) and the first gas (G1) made of a mixed gas (SG + DG) of the DG is injected, and the remaining gas injection modules (130b, 130d) are the source gas (SG) and the purge gas The second gas G2 made of the mixed gas SG + PG of the PG and the first gas G1 may be injected. In this case, some of the gas injection modules 130a and 130c are symmetrically diagonally with respect to the center of the substrate support 120, and the remaining gas injection modules 130b and 130d also refer to the center of the substrate support 120. Symmetrically in a diagonal direction.

As another example, as illustrated in FIG. 12, some of the gas injection modules 130a and 130c of the plurality of gas injection modules 130a, 130b, 130c, and 130d may include the source gas SG and the dopant gas ( DG) and the second gas G2 consisting of the mixed gas SG + DG + PG of the purge gas PG and the first gas G1 are injected, and the remaining gas injection modules 130b and 130d are The second gas G2 and the first gas G1 including the mixed gas SG + DG of the source gas SG and the dopant gas DG may be injected.

As a result, the second gas G2 injected from each of the plurality of gas injection modules 130a, 130b, 130c, and 130d may be at least one selected from the dopant gas DG and the purge gas PG. Gases DG and PG are included.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

110: process chamber 115: chamber lead
120: substrate support 130: gas injection unit
130a: first gas injection module 130b: second gas injection module
130c: third gas injection module 130d: fourth gas injection module
140: plasma power supply 210: ground electrode frame
230: gas hole pattern member 250: plasma electrode

Claims (7)

Process chambers;
A substrate support part installed in the process chamber to support a plurality of substrates and rotating in a predetermined direction;
A chamber lid covering an upper portion of the process chamber to face the substrate support; And
Is inserted into the chamber lid at regular intervals and includes a gas injection unit having a plurality of gas injection module for injecting different first and second gas on the substrate,
Each of the plurality of gas injection modules,
A ground electrode frame providing a first gas injection space for injecting a first gas and a second gas injection space for injecting a second gas;
A first gas supply hole formed in the ground electrode frame to supply the first gas to the first gas injection space;
A first gas injection hole communicating with the first gas supply hole and having a bottom surface opened without a separate gas injection hole pattern for injecting the first gas downward toward the substrate;
A second gas supply hole formed in the ground electrode frame to supply the second gas to the second gas injection space; And
A second gas injection hole formed on a bottom surface of the ground electrode frame and injecting the second gas downward toward a substrate;
The injection pressure of the second gas is higher than the injection pressure of the first gas substrate processing apparatus. The method of claim 1,
And the first gas supply hole is formed through the ground electrode frame. The method of claim 1,
And the second gas supply hole is formed through the ground electrode frame. The method of claim 1,
And the second gas injection hole is formed in a gas hole pattern member provided on a bottom surface of the ground electrode frame. The method of claim 1,
The ground electrode frame,
Top plate;
Ground sidewalls protruding downward to have a predetermined height from a lower surface of an edge of the upper plate;
And a ground partition member protruding downward from the central lower surface of the upper plate to have a predetermined height to form the first and second gas injection spaces. delete The method of claim 1,
And the amount of the second gas injected into the substrate gradually increases from the inner region of the substrate adjacent to the center side of the substrate support to the outer region of the substrate adjacent to the edge of the substrate support.

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