KR101946312B1 - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method capable of increasing a uniformity of a thin film material by separating a space for spraying a plasma and a space for spraying a source gas, and facilitating control of film quality of the thin film material, Comprises a process chamber; A substrate support rotatably installed in the process chamber to support a plurality of substrates; A chamber lid that covers the top of the process chamber to face the substrate support; And an electrode unit for sputtering a source gas and a reactive gas on the respective substrates using a plurality of electrode modules installed at a predetermined interval in the chamber lid so as to deposit thin film materials on the plurality of substrates, Wherein each of the plurality of electrode modules includes at least one reactive gas injection space for injecting a reactive gas onto the substrate, and at least one reactive gas injection space for spatially separating the reactive gas injection space from the reactive gas injection space, And one source gas injection space.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing apparatus,

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that separates a space for injecting a plasma and a space for injecting a source gas to increase the uniformity of the thin film material and facilitate the control of the film quality of the thin film material And a substrate processing method.

Generally, in order to manufacture a solar cell, a semiconductor device, a flat panel display, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on the surface of the substrate. For this purpose, A semiconductor manufacturing process such as a thin film deposition process, a photolithography process for selectively exposing a thin film using a photosensitive material, and an etching process for forming a pattern by selectively removing a thin film of an exposed portion are performed.

Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimum environment for the process, and recently, a substrate processing apparatus for performing a deposition or etching process using plasma is widely used.

Plasma-based substrate processing apparatuses include a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, a plasma etching apparatus for patterning a thin film, and the like.

1 is a schematic view for explaining a general substrate processing apparatus.

Referring to FIG. 1, a general substrate processing apparatus includes a chamber 10, a plasma electrode 20, a susceptor 30, and a gas injection means 40.

The chamber 10 provides a reaction space for the substrate processing process. At this time, the bottom surface of one side of the chamber 10 communicates with the exhaust port 12 for exhausting the reaction space.

The plasma electrode 20 is installed on the upper part of the chamber 10 to seal the reaction space.

One side of the plasma electrode 20 is electrically connected to an RF (Radio Frequency) power source 24 through a matching member 22. At this time, the RF power supply 24 generates and supplies RF power to the plasma electrode 20.

Further, the central portion of the plasma electrode 20 is communicated with the gas supply pipe 26 that supplies the source gas for the substrate processing process.

The matching member 22 is connected between the plasma electrode 20 and the RF power supply 24 to match the load impedance and the source impedance of the RF power supplied from the RF power supply 24 to the plasma electrode 20. [

The susceptor 30 is installed inside the chamber 10 to support a plurality of substrates W to be loaded from the outside. The susceptor 30 is an opposing electrode facing the plasma electrode 20 and is electrically grounded through an elevation shaft 32 for elevating and lowering the susceptor 30.

The elevating shaft 32 is vertically elevated and lowered by an elevating device (not shown). At this time, the lifting shaft 32 is surrounded by the bellows 34 that seals the lifting shaft 32 and the bottom surface of the chamber 10.

The gas injection means 40 is installed below the plasma electrode 20 so as to face the susceptor 30. A gas diffusion space 42 is formed between the gas injection means 40 and the plasma electrode 20 to diffuse the source gas supplied from the gas supply pipe 26 passing through the plasma electrode 20. The gas injection means 40 uniformly injects the source gas to all portions of the reaction space through the plurality of gas injection holes 44 communicated with the gas diffusion space 42.

Such a general substrate processing apparatus loads a substrate W onto a susceptor 30 and then injects a predetermined source gas into a reaction space of the chamber 10 and supplies RF power to the plasma electrode 20 A predetermined thin film on the substrate W is formed using the plasma formed on the substrate W by the electromagnetic field by forming an electromagnetic field in the reaction space.

However, in a general substrate processing apparatus, since the source gas is equal to the injection space and the plasma space, the uniformity of the thin film material deposited on the substrate W is determined according to the uniformity of the plasma density formed in the reaction space, There is difficulty in controlling membrane quality.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to improve the uniformity of a thin film material by separating a space for injecting a plasma and a space for injecting a source gas, And to provide a substrate processing apparatus and a substrate processing method capable of improving particles by minimizing the accumulated thickness of the substrate.

According to an aspect of the present invention, there is provided a substrate processing apparatus including: a processing chamber; A substrate support rotatably installed in the process chamber to support a plurality of substrates; A chamber lid that covers the top of the process chamber to face the substrate support; And an electrode unit for sputtering a source gas and a reactive gas on the respective substrates using a plurality of electrode modules installed at a predetermined interval in the chamber lid so as to deposit thin film materials on the plurality of substrates, Wherein each of the plurality of electrode modules includes at least one reactive gas injection space for injecting a reactive gas onto the substrate, and at least one reactive gas injection space for spatially separating the reactive gas injection space from the reactive gas injection space, And one source gas injection space.

Wherein the substrate processing apparatus includes: a plasma power supply unit for supplying a plasma power to a reaction gas injection space of each of the plurality of electrode modules; A reaction gas supply unit for supplying a reaction gas to the reaction gas injection space of each of the plurality of electrode modules; And a source gas supply unit for supplying a source gas to the source gas injection space of each of the plurality of electrode modules.

Each of the plurality of electrode modules includes an insulating member support hole formed to have the reaction gas injection space and the source gas injection space and inserted into the electrode insertion portion of the chamber lead and overlapping the reaction gas injection space Grounding frame; A partition member vertically installed in the ground frame to spatially separate the reaction gas injection space and the source gas injection space; An insulating member inserted into the insulating member support hole; A plasma electrode member disposed in the reaction gas injection space through the insulating member and electrically connected to the plasma power supply unit; A reaction gas supply member for supplying a reaction gas to the reaction gas injection space; And a source gas supply member for supplying a source gas to the source gas injection space.

Wherein the substrate processing apparatus includes: a plasma power supply unit for supplying a plasma power to a reaction gas injection space of each of the plurality of electrode modules; A reaction gas supply unit for supplying a reaction gas to the reaction gas injection space of each of the plurality of electrode modules; And a purge gas supply unit for supplying a purge gas to the reaction gas injection space of each of the plurality of electrode modules; And a source gas supply unit for supplying a source gas to the source gas injection space of each of the plurality of electrode modules.

Each of the plurality of electrode modules includes an insulating member support hole formed to have the reaction gas injection space and the source gas injection space and inserted into the electrode insertion portion of the chamber lead and overlapping the reaction gas injection space Grounding frame; A partition member vertically installed in the ground frame to spatially separate the reaction gas injection space and the source gas injection space; An insulating member inserted into the insulating member support hole; A plasma electrode member disposed in the reaction gas injection space through the insulating member and electrically connected to the plasma power supply unit; A reaction gas supply member for supplying a reaction gas to the reaction gas injection space; A purge gas supply member for supplying a purge gas to the reaction gas injection space; And a source gas supply member for supplying a source gas to the source gas injection space.

Each of the plurality of electrode modules includes a first insulating member support hole formed to have the reaction gas injection space and the source gas injection space and inserted into the electrode insertion portion of the chamber lead, A ground frame including a second insulating member support hole overlapping the source gas injection space; A partition member vertically installed in the ground frame to spatially separate the reaction gas injection space and the source gas injection space; First and second insulation members inserted into the first and second insulation member support holes, respectively; A first plasma electrode member disposed in the reaction gas injection space through the first insulating member and electrically connected to the plasma power supply unit; A second plasma electrode member disposed in the source gas injection space through the second insulating member and electrically connected to the plasma power supply unit; A reaction gas supply member for supplying a reaction gas to the reaction gas injection space; And a source gas supply member for supplying a source gas to the source gas injection space.

Each of the plurality of electrode modules may be arranged to be diagonally symmetric with respect to a center point of the substrate support.

Each of the plurality of electrode modules may inject at least one kind of gas of the reaction gas and the source gas into the entire region of the substrate or may be injected into different regions of the substrate.

Wherein at least one of the plurality of electrode modules injects at least one kind of gas selected from the group consisting of the reaction gas and the source gas into the entire area of the substrate, At least one kind of gas may be injected into a part of the substrate.

Some of the electrode modules of the plurality of electrode modules may form a plasma in the reaction gas injection space according to a plasma power source so that only the plasmaized reaction gas is injected onto the substrate.

Wherein a portion of the plurality of electrode modules includes at least one of a plurality of electrode modules that injects the source gas supplied only to the source gas injection space onto the substrate or a reaction gas supplied to the reaction gas injection space and a source gas Can be jetted together on the substrate.

Some of the electrode modules of the plurality of electrode modules may form a plasma in the reactive gas injection space according to the plasma power supplied to the first plasma electrode member so that only the plasmaized reaction gas is injected onto the substrate.

Some of the electrode modules of the plurality of electrode modules may generate plasma in the source gas injection space according to the plasma power supplied to the second plasma electrode member so that only the plasmaized source gas is injected onto the substrate.

According to an aspect of the present invention, there is provided a substrate processing method including: (A) placing a plurality of substrates on a substrate support unit rotatably installed in a process chamber; (B) rotating a substrate support on which the plurality of substrates are mounted; And a step (C) of spatially separating a source gas and a reactive gas from each other using a plurality of electrode modules disposed at a predetermined interval above the substrate supporter, and spraying the source gas and the reactive gas onto the substrate, The thin film material is deposited by the reaction of the source gas and the reactive gas.

Wherein each of the plurality of electrode modules includes at least one spatially separated reaction gas injection space and at least one source gas injection space, and the step (C) comprises the steps of: A source gas is supplied to the substrate, a source gas is sprayed onto the substrate, and a reaction gas and a plasma power are supplied to the reaction gas injection space of each of the plurality of electrode modules to form a plasma in the reaction gas injection space, May be sprayed onto the substrate.

Wherein each of the plurality of electrode modules includes at least one spatially separated reaction gas injection space and at least one source gas injection space, and the step (C) comprises the steps of: forming at least one electrode module A source gas and a plasma power are supplied to a source gas injection space to form a plasma in the source gas injection space to inject a plasma source gas onto the substrate, A reaction gas and a plasma power are supplied to the injection space to form a plasma in the reaction gas injection space to spray the plasmaized reaction gas onto the substrate.

Wherein each of the plurality of electrode modules comprises at least one spatially separated reaction gas injection space and at least one source gas injection space, and in the step (C), some of the plurality of electrode modules are plasma Wherein the plasma is generated in the reaction gas injection space according to a power source so that only the plasmaized reaction gas is injected onto the substrate, and the remaining electrode modules of the plurality of electrode modules apply the source gas supplied only to the source gas injection space to the substrate Or the reaction gas supplied to the reaction gas injection space and the source gas supplied to the source gas injection space may be injected together on the substrate.

Wherein each of the plurality of electrode modules is spatially separated and comprises at least one reaction gas injection space and at least one source gas injection space, and in the step (C) A plasma is formed in the reaction gas injection space according to a power source to inject only the plasmaized reaction gas onto the substrate and the remaining electrode modules of the plurality of electrode modules form a plasma in the source gas injection space according to the plasma power Only the plasmaized source gas can be injected onto the substrate.

Each of the plurality of electrode modules may inject at least one kind of gas of the reaction gas and the source gas into the entire region of the substrate or may be injected into different regions of the substrate.

Wherein at least one of the plurality of electrode modules injects at least one kind of gas selected from the group consisting of the reaction gas and the source gas into the entire area of the substrate, At least one kind of gas may be injected into a part of the substrate.

According to a preferred embodiment of the present invention, there is provided a substrate processing apparatus and a substrate processing method, comprising: a reaction gas injection space provided in a plurality of electrode modules arranged in a predetermined form on a substrate support for rotating a plurality of substrates; It is possible to control the film quality of the thin film material by spatially separating the space and to prevent or minimize the thin film material from being deposited on the periphery of the reactive gas injection space and / or on the plasma electrode member, The uniformity can be increased.

In addition, the substrate processing apparatus and the substrate processing method using the same according to the present invention can purge the remaining reactive gas without reacting with the source gas and / or the source gas that is not deposited on the substrate using the purge gas, It is possible to further facilitate the control of the film quality.

1 is a schematic view for explaining a general substrate processing apparatus.
2 is a view schematically showing a substrate processing apparatus according to a first embodiment of the present invention.
FIG. 3 is a view schematically showing the chamber lead and the electrode portion shown in FIG. 2. FIG.
4 is a plan and a bottom perspective view schematically showing the electrode module shown in Fig.
5 is a cross-sectional view schematically showing a cross section of line II 'shown in FIG.
6 is an exploded perspective view schematically showing the electrode module shown in FIG.
7 and 8 are views for explaining a substrate processing method using the substrate processing apparatus according to the first embodiment of the present invention.
9 is a view schematically showing a substrate processing apparatus according to a second embodiment of the present invention.
FIG. 10 is a view schematically showing each electrode module shown in FIG. 9. FIG.
11 is a cross-sectional view schematically showing a cross section of each electrode module shown in Fig.
12 is a view for explaining a substrate processing method using the substrate processing apparatus according to the second embodiment of the present invention described above.
13 is a view schematically showing a substrate processing apparatus according to a third embodiment of the present invention.
FIG. 14 is a view schematically showing each electrode module shown in FIG. 13; FIG.
15 is a cross-sectional view schematically showing a cross section of each electrode module shown in Fig.
16 is a rear perspective view schematically showing a modification of each electrode module in the substrate processing apparatus according to the first to third embodiments of the present invention.
17 is a cross-sectional view schematically showing a cross section taken along a line II-II 'shown in FIG.
18 is a plan and bottom perspective view schematically showing another modification of each electrode module in the substrate processing apparatus according to the fourth embodiment of the present invention.
19 is a cross-sectional view schematically showing a cross section taken along the line III-III 'shown in FIG.
20 is an exploded perspective view schematically showing the electrode module shown in Fig.
21 is a plan view for explaining modified embodiments of the electrode unit in the substrate processing apparatus according to the first to fourth embodiments of the present invention.
FIGS. 22A and 22B are views for explaining a modified example of the third and fourth electrode modules shown in FIG. 21. FIG.
FIG. 23 is a view for explaining a modified example of the first through fourth electrode modules shown in FIG. 21. FIG.
24 is a diagram for explaining a first modification of the substrate processing method using the substrate processing apparatus according to any one of the first to third embodiments of the present invention.
25 is a view for explaining a second modification of the substrate processing method using the substrate processing apparatus according to any one of the first to third embodiments of the present invention.
26 is a view for explaining a third modification of the substrate processing method using the substrate processing apparatus according to any one of the first to third embodiments of the present invention.
27 is a view for explaining a fourth modification of the substrate processing method using the substrate processing apparatus according to any one of the first to third embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 2 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention, and FIG. 3 is a view schematically showing the chamber lid and the electrode unit shown in FIG.

2 and 3, a substrate processing apparatus 600 according to the first embodiment of the present invention includes a process chamber 610, a chamber lid 615, a substrate supporting unit 620, an electrode unit 630, a plasma A power supply unit 650, a reaction gas supply unit 660, and a source gas supply unit 670.

The process chamber 610 provides a reaction space for the substrate processing process. The bottom surface of the process chamber 610 communicates with an exhaust pipe 612 for exhausting gases and the like in the reaction space.

The chamber lid 615 is installed on top of the process chamber 610 to cover the top of the process chamber 610 and is electrically grounded. The chamber lead 615 supports the electrode portion 630 and includes a plurality of electrode module inserting portions 615a, 615b, 615c, and 615d into which the electrode portion 630 is inserted.

3, the chamber lid 615 is shown as having four electrode module inserts 615a, 615b, 615c and 615d, but the present invention is not limited thereto. The chamber lid 615 may be a 2N (Where N is a natural number) electrode module insertion portions. At this time, each of the plurality of electrode module inserting portions is provided so as to be mutually symmetrical in the diagonal direction with respect to the center point of the chamber lid 615. Hereinafter, it is assumed that the chamber lead 615 includes the first through fourth electrode module inserting portions 615a, 615b, 615c, and 615d.

The substrate support 620 is rotatably mounted within the process chamber 610. The substrate support 620 is supported by a rotation axis 622 passing through the center bottom surface of the process chamber 610. The rotation shaft 622 is rotated according to the driving of the shaft driving member 624 to rotate the substrate supporting unit 620 in a predetermined direction. The rotating shaft 622 exposed to the outside of the lower surface of the process chamber 610 is enclosed in the bellows 626 provided on the lower surface of the process chamber 610.

The substrate support 620 supports a plurality of substrates W loaded from an external substrate loading apparatus (not shown). At this time, the substrate supporting portion 620 has a disk shape, and a plurality of the substrates W, for example, a semiconductor substrate or a wafer, are arranged in a circular shape so as to have a predetermined gap.

The electrode unit 630 is inserted into each of the first through fourth electrode module insertion portions 615a, 615b, 615c, and 615d formed in the chamber lead 615. [ The electrode unit 630 emits the plasmaized reaction gas and the source gas onto the plurality of substrates W rotated in accordance with the rotation of the substrate supporting unit 620. To this end, the electrode unit 630 includes first to fourth electrode modules 630a, 630b, 630c, and 630d inserted into the first to fourth electrode module inserting units 615a, 615b, 615c, and 615d .

Each of the first to fourth electrode modules 630a, 630b, 630c and 630d is inserted into each of the first to fourth electrode module inserting portions 615a, 615b, 615c and 615d of the chamber lead 615, 620 are symmetrical with respect to the X-axis and Y-axis directions. Each of the first to fourth electrode modules 630a, 630b, 630c, and 630d is formed to include a reactive gas injection space and a source gas injection space. The reaction gas injection space and the source gas injection space, And at least one of the source gases is directly sprayed onto the plurality of substrates (W). 4 to 6, each of the first to fourth electrode modules 630a, 630b, 630c, and 630d includes a ground frame 710, a partition member 720, an insulating member 730, A plasma electrode member 740, a reaction gas supply member 760, and a source gas supply member 770. [

The ground frame 710 is formed so as to have a rectangular cross section with the opening so as to have the reactive gas injection space S 1 and the source gas injection space S 2 separated by the partition member 720. The ground frame 710 is inserted into each of the first to fourth electrode module inserting portions 615a, 615b, 615c and 615d of the chamber lead 615 and is electrically grounded through the chamber lead 615. [ To this end, the ground frame 710 comprises a top plate 710a and sidewalls 710b.

The upper surface plate 710a includes an insulating member support hole 711 and a plurality of first to third gas supply holes 713, 715, and 717.

Insulation member support holes 711 are formed through the top plate 710a to communicate with the reaction gas injection space S1.

Each of the plurality of first gas supply holes 713 is formed by penetrating one side region of the upper surface plate 710a adjacent to one side of the insulating member support hole 711 at regular intervals so as to communicate with one side of the reaction gas injection space S1 do. Each of the plurality of second gas supply holes 715 is formed by penetrating the other side region of the upper surface plate 710a adjacent to the other side of the insulating member support hole 711 at regular intervals so as to communicate with the other side of the reaction gas injection space S1 do. Each of the plurality of first and second gas supply holes 713 and 715 is formed to be parallel to each other with an insulating member support hole 711 interposed therebetween.

Each of the plurality of third gas supply holes 717 penetrates one side edge region of the top plate 710a adjacent to each of the plurality of first gas supply holes 713 at a predetermined interval so as to communicate with the source gas injection space S2 .

4, the partition member 720 is disposed between the reaction gas injection space S1 and the source gas injection space S2, that is, between the first gas supply hole 713 and the third gas supply hole 717, And is vertically protruded from the lower surface of the upper surface plate 710a. The partition member 720 is formed inside the ground frame 710 to divide the inside of the ground frame 710 into the reaction gas injection space S1 and the source gas injection space S2. The partition member 720 is electrically connected to the ground frame 710 by being integrated or electrically coupled to the ground frame 710.

The reaction gas injection space S1 is formed to be long along the longitudinal direction of the side wall of the long side of the ground frame 710 so as to overlap the insulation member support hole 711 and the plurality of first and second gas supply holes 713 and 715 .

The source gas injection space S2 is formed so as to be parallel to the reaction gas injection space S1 with the partition member 720 interposed therebetween so as to overlap the plurality of third gas supply holes 717. [

The insulating member 730 is made of an insulating material and is inserted into the insulating member support hole 711 formed in the ground frame 710 and supported by the ground frame 710. To this end, the insulating member 730 has a "T" shaped cross section and includes a body 732 inserted into the insulating member support hole 711 of the ground frame 710, A head portion 734 supported on the upper surface of the ground frame 710 and an electrode insertion portion 736 penetrating the head portion 734 and the body 732. [ The insulating member 730 serves to electrically isolate the grounding frame 710 from the plasma electrode member 740.

The plasma electrode member 740 is made of a conductive material and is inserted into the electrode inserting portion 736 formed in the insulating member 730 and protruded to a predetermined height from the lower surface of the grounding frame 710 so as to be disposed in the reactive gas injecting space S1 . At this time, it is preferable that the plasma electrode member 740 protrude to the same height as the partition wall member 720 and the side walls 710b of the ground frame 710, respectively. For this purpose, the plasma electrode member 740 is formed to have a "T" shaped cross section. The plasma electrode member 740 is electrically connected to the plasma power supply unit 650 through the feed cable 750.

The reaction gas supply member 760 supplies the reaction gas supplied from the reaction gas supply unit 660 to each of the first and second gas supply holes 713 and 715 formed in the ground frame 710, The gas is injected into the reaction gas injection space S1 through the first and second gas supply holes 713 and 715, respectively. To this end, the reaction gas supply member 760 includes a reaction gas supply pipe 762, a plurality of first gas branch pipes 764, and a plurality of first gas connection pipes 766.

The reaction gas supply pipe 762 is connected to the reaction gas supply unit 660 and supplies the reaction gas supplied from the reaction gas supply unit 660 to each of the plurality of first gas branch pipes 764.

Each of the plurality of first gas branching pipes 764 is branched from the reaction gas supply pipe 762 so as to correspond to each of the first to fourth electrode modules 630a, 630b, 630c and 630d, and covers the chamber lid 615 And communicates with each of the plurality of first gas connection pipes 766 through the lead cover 617.

Each of the plurality of first gas connection pipes 766 is branched from the first gas branch pipe 764 and connected to the first and second gas supply holes 713 and 715 formed in the ground frame 710, And is coupled to the frame 710. Each of the plurality of first gas connection pipes 766 is connected to the reaction gas injection space S1 through the first and second gas supply holes 713 and 715 so as to be connected to the first gas branch pipe 764 And injects the supplied reaction gas into the reaction gas injection space S1.

The source gas supply member 770 supplies the source gas supplied from the source gas supply unit 670 to each of the plurality of third gas supply holes 717 formed in the ground frame 710, Holes 717 to the source gas injection space S2. The source gas supply member 770 includes a source gas supply pipe 772, a plurality of second gas branch pipes 774, and a plurality of second gas connection pipes 776.

The source gas supply pipe 772 is connected to the source gas supply unit 670 and supplies the source gas supplied from the source gas supply unit 670 to each of the plurality of second gas branch pipes 774.

Each of the plurality of second gas branching pipes 774 is branched from the source gas supply pipe 772 so as to correspond to each of the first to fourth electrode modules 630a, 630b, 630c and 630d and covers the chamber lid 615 And communicates with each of the plurality of second gas connection pipes 776 through the lead cover 617.

Each of the plurality of second gas connection pipes 776 branches from the second gas branch pipe 774 and is connected to the ground frame 710 so as to communicate with each of the plurality of third gas supply holes 717 formed in the ground frame 710 . Each of the plurality of second gas connection pipes 776 communicates with the source gas injection space S2 through each of the third gas supply holes 717 to supply the source gas supplied from the second gas branch pipe 774 And is injected into the source gas injection space S2.

2 and 3, the plasma power supply unit 650 generates a plasma power having a predetermined frequency and supplies the plasma power to the first to fourth electrode modules 630a, 630b, 630c, 630d are supplied to the plasma electrode members 740, respectively. For example, the HF power has a frequency in the range of 3 MHz to 30 MHz, and the VHF power is in the range of 3 MHz to 30 MHz. And may have a frequency in the range of 30 MHz to 300 MHz.

An impedance matching circuit 652 is connected to the feed cable 750.

The impedance matching circuit 652 matches the load impedance and the source impedance of the plasma power supply supplied from the plasma power supply unit 650 to each plasma electrode member 740. The impedance matching circuit 652 may be composed of at least two impedance elements (not shown) composed of at least one of a variable capacitor and a variable inductor.

The reaction gas supply unit 660 supplies a predetermined reaction gas to the reaction gas injection spaces S1 of the first to fourth electrode modules 630a, 630b, 630c, and 630d. The reaction gas supply unit 660 is disposed on the upper surface of the lid cover 617 covering the chamber lid 615 or outside the process chamber 610 and through the reaction gas supply member 760 described above, The reaction gas is supplied to the reaction gas injection spaces S1 of the electrode modules 630a, 630b, 630c, and 630d, respectively. At this time, the reaction gas may be a gas which reacts with the source gas. For example, the reaction gas may be composed of at least one of nitrogen (N2), oxygen (O2), nitrogen dioxide (N2O), and ozone (O3). This reaction gas is plasma-generated by the plasma generated in the reaction gas injection space S1 and is sprayed onto the substrate W to react with the source gas injected onto the substrate W from the source gas injection space S2, So that a thin film material is deposited on the substrate W.

The source gas supply unit 670 supplies a predetermined source gas to the source gas injection space S2 of each of the first to fourth electrode modules 630a, 630b, 630c, and 630d. The source gas supply unit 670 is provided on the upper surface of the lead cover 617 covering the chamber lid 615 or outside the process chamber 610 and through the source gas supply member 770 described above, The source gas is supplied to the source gas injection spaces S2 of the electrode modules 630a, 630b, 630c, and 630d, respectively. The source gas includes a thin film material to be deposited on the substrate W and may include silicon (Si), a titanium group element (Ti, Zr, Hf, etc.), aluminum (Al) . For example, a source gas containing silicon (Si) may be formed of a material selected from the group consisting of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetraethylorthosilicate (TEOS), dichlorosilane (DCS) Hexachlorosilane, Tri-dimethylaminosilane (TriDMAS), and Trisilylamine (TSA). The source gas SG is deposited on the substrate W by reacting with the reaction gas described above to form a predetermined thin film material on the substrate W. [

FIGS. 7 and 8 are views for explaining a substrate processing method using the substrate processing apparatus according to the first embodiment of the present invention. Referring to FIG. 7, a substrate processing method will be described below.

First, a plurality of substrates W are loaded onto the substrate support 620 at regular intervals.

Then, the substrate supporting unit 620 on which the plurality of substrates W are loaded is rotated in a predetermined direction.

Subsequently, a source gas SG is supplied to the source gas injection spaces S2 of the first to fourth electrode modules 630a, 630b, 630c, and 630d, and the source gas SG to spray the source gas SG onto each of the plurality of substrates W rotated in accordance with the rotation of the substrate supporting portion 620. [

Subsequently, plasma power is supplied to the plasma electrode member 740 of each of the first to fourth electrode modules 630a, 630b, 630c, and 630d, and plasma gas is supplied to the reaction gas injection spaces 630a, 630b, 630c, The plasma generated in the reaction gas injection space S1 of each of the electrode modules 630a, 630b, 630c, and 630d is supplied to the reaction gas injection space S1 by supplying the reaction gas RG to the reaction gas injection space S1. And the reaction gas RG, which has been plasmaized, is sprayed onto the substrate W. At this time, the plasmaized reaction gas RG may be injected to the lower portion of the reaction gas injection space S1 by the flow velocity (or flow) of the reaction gas RG supplied to the reaction gas injection space S1. Thus, in the plurality of substrates W rotated in accordance with the rotation of the substrate support 620, the source gas SG injected from each source gas injection space S2 and the plasma gas injected from the reaction gas injection space S1 The reactive gases RG react with each other to cause a predetermined thin film material to be deposited on the substrate W. [

In the substrate processing apparatus and the substrate processing method described above, the step of injecting the source gas SG and the step of injecting the plasmaized reaction gas RG may be performed simultaneously or sequentially.

The substrate processing apparatus and the substrate processing method according to the first embodiment of the present invention include first through fourth electrode modules 630a and 630a arranged in a predetermined form on a substrate supporting unit 620 for rotating a plurality of substrates W 630b, 630c, and 630d can be separated spatially from the reaction gas injection space S1 and the source gas injection space S1, that is, by separating the source gas and the plasma, the film quality control of the thin film material can be facilitated, The efficiency of use of the source gas SG and the uniformity of the thin film material can be increased by preventing or minimizing the deposition of the material around the reactive gas injection space S1 and / or the plasma electrode member 740. [

FIG. 9 is a view schematically showing a substrate processing apparatus according to a second embodiment of the present invention, FIG. 10 is a view schematically showing each electrode module shown in FIG. 9, and FIG. 11 is a cross- Sectional view schematically showing a cross section of the module.

9 to 11, a substrate processing apparatus 800 according to the second embodiment of the present invention includes a process chamber 610, a chamber lid 615, a substrate support 620, an electrode portion 830, a plasma A power supply unit 650, a reaction gas supply unit 660, a source gas supply unit 670, and a purge gas supply unit 680. In the substrate processing apparatus 800 according to the second embodiment of the present invention having such a configuration, the remaining components except for the electrode portion 830 and the purge gas supply portion 680 are the same as the substrate 100 according to the first embodiment of the present invention The same description of the same components will be omitted.

The electrode unit 830 is disposed on the substrate supporting unit 620 and selectively injects the plasmaized reaction gas and the source gas and the purge gas onto the plurality of substrates W rotated by the rotation of the substrate supporting unit 620 . The electrode unit 830 includes first to fourth electrode modules 630a, 630b, 630c, and 630d arranged at predetermined intervals in the chamber lid 615 in a predetermined shape.

Each of the first to fourth electrode modules 630a, 630b, 630c, and 630d is formed to have the reaction gas injection space S1 and the plurality of source injection spaces S2 described above, and includes a ground frame 710, A reaction gas supply member 860, a source gas supply member 770, and a purge gas supply member 880. The source gas supply member 770 and the purge gas supply member 880 are connected to each other. The remaining configurations of the first to fourth electrode modules 630a, 630b, 630c, and 630d having the above configuration except for the reaction gas supply member 860 and the purge gas supply member 880 are shown in FIGS. 2 to 6 Are the same as those of the electrode unit 630 of the above-described substrate processing apparatus 800, and a duplicate description thereof will be omitted.

The reaction gas supply member 860 supplies the reaction gas RG supplied from the reaction gas supply unit 660 to each of the plurality of first gas supply holes 713 formed in the ground frame 710, And is sprayed to one side region of the reaction gas injection space S1 through each of the plurality of first gas supply holes 713. To this end, the reaction gas supply member 860 includes a reaction gas supply pipe 862, a first gas branch pipe 864, and a plurality of first gas connection pipes 866.

The reaction gas supply pipe 862 communicates with the reaction gas supply unit 660 to supply the reaction gas supplied from the reaction gas supply unit 660 to each of the plurality of first gas branch pipes 864.

Each of the first gas branching pipes 864 is branched from the reaction gas supply pipe 862 so as to correspond to each of the first to fourth electrode modules 630a, 630b, 630c and 630d and passes through the chamber lead 615, The first gas connection pipe 866 is connected to the first gas connection pipe 866, respectively.

Each of the plurality of first gas connection pipes 866 is branched from the first gas branch pipe 864 and connected to the ground frame 710 so as to communicate with each of the plurality of first gas supply holes 713 formed in the ground frame 710 . Accordingly, each of the plurality of first gas connection pipes 866 communicates with one side region of the reaction gas injection space S1 through each of the first gas supply holes 713 and is supplied from the first gas branch pipe 864 The reactive gas RG is injected into one side region of the reaction gas injection space S1.

The purge gas supply member 880 supplies the purge gas PG supplied from the purge gas supply unit 680 to each of the plurality of second gas supply holes 715 formed in the ground frame 710, And is sprayed to the other area of the reaction gas injection space S1 through each of the plurality of second gas supply holes 715. [ To this end, the purge gas supply member 880 includes a purge gas supply pipe 882, a third gas branch pipe 884, and a plurality of third gas connection pipes 886.

The purge gas supply pipe 882 communicates with the purge gas supply unit 680 and supplies the purge gas PG supplied from the purge gas supply unit 680 to each of the plurality of third gas branch pipes 884.

Each of the third gas branching pipes 884 is branched from the purge gas supply pipe 882 so as to correspond to each of the first to fourth electrode modules 630a, 630b, 630c and 630d and passes through the chamber lead 615 And the third gas connection pipe 886 of the second gas connection pipe 886.

Each of the plurality of third gas connection pipes 886 branches from the third gas branch pipe 884 and is connected to the ground frame 710 so as to communicate with each of the plurality of second gas supply holes 715 formed in the ground frame 710 . Each of the plurality of third gas connection pipes 886 communicates with the other area of the reaction gas injection space S1 through each of the second gas supply holes 715 and is supplied from the third gas branch pipe 884 And the purge gas PG is injected into the other area of the reaction gas injection space S1.

The purge gas supply unit 680 supplies a predetermined purge gas PG to the other area of the reaction gas injection space S1 of each of the first to fourth electrode modules 630a, 630b, 630c, and 630d. The purge gas supply unit 680 is provided on the upper surface of the lead cover 617 covering the chamber lid 615 or outside the process chamber 610 and through the purge gas supply member 880 described above, The purge gas PG is supplied to the other area of the reaction gas injection space S1 of each of the electrode modules 630a, 630b, 630c, and 630d. At this time, the purge gas PG is for purge the remaining reaction gas RG without reacting with the source gas SG and / or the source gas SG not deposited on the substrate W, (N2), argon (Ar), xenon (Ze), and helium (He).

FIG. 12 is a view for explaining a substrate processing method using the substrate processing apparatus according to the second embodiment of the present invention. Referring to FIGS. 7 and 12, a substrate processing method will be described as follows.

First, a plurality of substrates W are loaded onto the substrate supporting unit 620 at regular intervals.

Then, the substrate supporting unit 620 on which the plurality of substrates W are placed is rotated in a predetermined direction.

Subsequently, a source gas SG is supplied to each of the source gas injection spaces S2 of the first to fourth electrode modules 630a, 630b, 630c, and 630d, The source gas SG is sprayed onto each of the plurality of substrates W rotated by the rotation of the substrate supporting unit 620 by injecting the substrate SG.

Subsequently, plasma power is supplied to the plasma electrode member 740 of each of the first to fourth electrode modules 630a, 630b, 630c, and 630d, and plasma gas is supplied to the reaction gas injection spaces 630a, 630b, 630c, The plasma generated in the reaction gas injection space S1 of each of the electrode modules 630a, 630b, 630c, and 630d by supplying the reaction gas RG to the reaction gas injection spaces S1, The reaction gas RG which has been plasmaized is sprayed onto the substrate W. Thus, in the plurality of substrates W rotated in accordance with the rotation of the substrate support 620, the source gas SG injected from each source gas injection space S2 and the plasma gas injected from the reaction gas injection space S1 The reactive gases RG react with each other to cause a predetermined thin film material to be deposited on the substrate W. [

Subsequently, the plasma power supplied to each of the plasma electrode members 740 of each of the first to fourth electrode modules 630a, 630b, 630c and 630d is stopped, and the plasma power supplied to each of the electrode modules 630a, 630b, 630c and 630d A plurality of substrates rotated by rotation of the substrate supporting unit 620 by supplying the purge gas PG to the reaction gas injection space S1 and injecting the purge gas PG into the lower portions of the reaction gas injection spaces S1, W are injected with purge gas PG. The purge gas PG injected to the plurality of substrates W is supplied to the substrate W without reacting with the source gas SG and / or the source gas SG not deposited on the substrate W, .

In the substrate processing apparatus and the substrate processing method described above, the step of injecting the source gas SG, the step of injecting the plasmaized reaction gas RG, and the step of injecting the purge gas PG may be performed simultaneously, Lt; / RTI > In the step of spraying the purge gas P, a plasma power is supplied to each of the plasma electrode members 740 together with the purge gas PG to form a plasma in each of the reaction gas injection spaces S1, thereby forming a plasma- May be sprayed onto the substrate (W).

The substrate processing apparatus and the substrate processing method according to the second embodiment of the present invention not only provide the same effects as those of the substrate processing apparatus and the substrate processing method according to the first embodiment of the present invention, The uniformity of the thin film material and the film quality control of the thin film material can be controlled by purging the remaining reactive gas RG without reacting with the source gas SG and / or the source gas SG not deposited on the substrate W It can be made even easier.

FIG. 13 is a view schematically showing a substrate processing apparatus according to a third embodiment of the present invention, FIG. 14 is a view schematically showing each electrode module shown in FIG. 13, FIG. 15 is a cross- Sectional view schematically showing a cross section of the module.

13 to 15, the substrate processing apparatus 900 according to the third embodiment of the present invention includes reaction gas supply members 860 of the first to fourth electrode modules 630a, 630b, 630c, and 630d, And the purge gas supply member 880 are configured to communicate with each other, as shown in FIGS. 8 to 10, except that the purge gas supply member 880 is configured to communicate with the purge gas supply member 880. Therefore, the same reference numerals are assigned to the same components, and repetitive description of the same components will be omitted.

13 and 14, the reaction gas supply member 860 and the purge gas supply member 880 communicate with each other through the reaction / purge gas connection pipe 890.

The reaction / purge gas connection pipe 890 communicates with the first gas connection pipe 866 of the reaction gas supply member 860 and the third gas connection pipe 886 of the purge gas supply member 880, The reaction gas RG supplied to the first gas connection pipe 866 from the first gas connection pipe 660 and the purge gas PG supplied from the purge gas supply unit 680 to the third gas connection pipe 886 are mixed, (S1).

The substrate processing apparatus 900 according to the third embodiment of the present invention can process the reactive gas RG and the purge gas PG according to the driving state of the reactive gas supply unit 660 and the purge gas supply unit 680, At least one of the gases can be selectively supplied to the reaction gas injection space S1.

6 and 12, a substrate processing method using the substrate processing apparatus according to the third embodiment of the present invention will be described.

First, a plurality of substrates W are loaded onto the substrate supporting unit 620 at regular intervals.

Then, the substrate supporting unit 620 on which the plurality of substrates W are placed is rotated in a predetermined direction.

Subsequently, a source gas SG is supplied to each of the source gas injection spaces S2 of the first to fourth electrode modules 630a, 630b, 630c, and 630d, The source gas SG is sprayed onto each of the plurality of substrates W rotated by the rotation of the substrate supporting unit 620 by injecting the substrate SG.

Subsequently, plasma power is supplied to the plasma electrode member 740 of each of the first to fourth electrode modules 630a, 630b, 630c, and 630d, and plasma gas is supplied to the reaction gas injection spaces 630a, 630b, 630c, 630b, 630c, and 630d of the respective electrode modules 630a, 630b, 630c, and 630d by simultaneously supplying the reactive gas RG and the purge gas PG to the reactive gas injection space S1, The reactive gas RG and the purge gas, which are plasmaized by the plasma generated in the plasma processing unit S1, are sprayed onto the substrate W. [ Thus, in the plurality of substrates W rotated in accordance with the rotation of the substrate support 620, the source gas SG injected from each source gas injection space S2 and the plasma gas injected from the reaction gas injection space S1 The reactive gases RG react with each other to cause a predetermined thin film material to be deposited on the substrate W. [ At the same time, the plasmaized purge gas injected from the reaction gas injection space S1 is supplied to the substrate W without reacting with the source gas SG and / or the source gas SG not deposited on the substrate W, ).

In the substrate processing apparatus and the substrate processing method described above, the step of injecting the source gas SG, the step of injecting the plasmaized reaction gas RG and the purge gas PG may be performed simultaneously or sequentially . At this time, the step of injecting the plasmaized reaction gas and the purge gas may be performed simultaneously or sequentially. Then, the purge gas PG may be injected in a state in which the plasma is not converted into plasma.

The substrate processing apparatus and the substrate processing method according to the third embodiment of the present invention can provide the same effects as those of the substrate processing apparatus and the substrate processing method according to the second embodiment of the present invention described above.

In the substrate processing apparatus and the substrate processing method according to the first to third embodiments of the present invention, each of the first to fourth electrode modules 630a, 630b, 630c, and 630d of the electrode units 630 and 830 includes one The reactive gas injection space S1 and the one source gas injection space S2 are provided. However, the present invention is not limited to this, and as shown in FIGS. 16 and 17, And a plurality of source gas injection spaces S2.

FIG. 16 is a rear perspective view schematically showing a modification of each electrode module in the substrate processing apparatus according to the first to third embodiments of the present invention, and FIG. 17 is a cross-sectional view taken along line II-II ' Fig.

16 and 17, each of the first to fourth electrode modules 630a, 630b, 630c, and 630d according to the modified embodiment includes a plurality of reaction gas injection spaces S1 and a plurality of source gas injection spaces S2. That is, each of the first to fourth electrode modules 630a, 630b, 630c, and 630d includes a plurality of sets of modules M1 and M2 configured consecutively.

Each of the plurality of module sets M1 and M2 includes one reaction gas injection space S1 and one source gas injection space S7 that are spatially separated by the partition walls 720 and the side walls of the ground frame 710, (S2).

The reaction gas injection space S1 of each of the plurality of module sets M1 and M2 is provided with the plasma electrode member 740 as described above and the reaction gas RG is supplied or the reaction gas RG and the purge gas (PG + RG) is supplied.

One kind of source gas SG or a different kind of source gas may be supplied to the source gas injection space S2 of each of the plurality of module sets M1 and M2. When a different type of source gas is supplied to the source gas injection space S2 of each of the plurality of module sets M1 and M2, a multilayer thin film made of different thin film materials may be formed on the substrate W .

16 and 17 illustrate that each of the first to fourth electrode modules 630a, 630b, 630c, and 630d includes two sets of modules M1 and M2. However, the present invention is not limited thereto, Each of the fourth electrode modules 630a, 630b, 630c, and 630d may be formed of a set of modules of M (where M is a natural number of 2 or more) modules.

18 is a plan and bottom perspective view schematically showing another modified embodiment of each electrode module in the substrate processing apparatus according to the fourth embodiment of the present invention. FIG. 19 is a cross-sectional view taken along line III-III ' FIG. 20 is an exploded perspective view schematically showing the electrode module shown in FIG. 18; FIG.

18 to 20, each of the first to fourth electrode modules 630a, 630b, 630c, and 630d according to other modified embodiments includes first to fourth electrode modules 630a, 630b, 630c, and 630d of the chamber lead 615 shown in FIG. 615b, 615c, and 615d, respectively, and are disposed to be symmetrical with respect to the X-axis and Y-axis directions with respect to the center point of the substrate support portion 620. [ Each of the first to fourth electrode modules 630a, 630b, 630c, and 630d is formed to include a reactive gas injection space and a source gas injection space. The reaction gas injection space and the source gas injection space, And at least one of the plasmaized source gas is directly sprayed onto the plurality of substrates (W). Each of the first to fourth electrode modules 630a, 630b, 630c, and 630d includes a ground frame 710, a partition member 720, first and second insulating members 730a and 730b, 2 plasma electrode members 740a and 740b, a reaction gas supply member 760, and a source gas supply member 770. [

The ground frame 710 is formed so as to have a rectangular cross section with the opening so as to have the reactive gas injection space S 1 and the source gas injection space S 2 separated by the partition member 720. The ground frame 710 is inserted into each of the first to fourth electrode module inserting portions 615a, 615b, 615c and 615d of the chamber lead 615 and is electrically grounded through the chamber lead 615. [ To this end, the ground frame 710 comprises a top plate 710a and sidewalls 710b.

The upper surface plate 710a includes first and second insulating member support holes 711a and 711b and a plurality of first to fourth gas supply holes 713, 715, 717, and 719.

The first insulating member support hole 711a is formed to penetrate through the upper surface plate 710a to communicate with the reaction gas injection space S1.

The second insulating member support hole 711b is formed through the upper surface plate 710a so as to communicate with the source gas injection space S2.

Each of the plurality of first gas supply holes 713 is communicated with one side of the reaction gas injection space S1 through one side of the upper plate 710a adjacent to one side of the first insulation member support hole 711a at regular intervals . Each of the plurality of second gas supply holes 715 penetrates the other side of the upper surface plate 710a adjacent to the other side of the first insulating member support hole 711a at a predetermined interval so as to communicate with the other side of the reaction gas injection space S1 . Each of the plurality of first and second gas supply holes 713 and 715 is formed to be parallel to each other with the first insulating member support hole 711a interposed therebetween.

Each of the plurality of third gas supply holes 717 is communicated with one side of the upper surface plate 710a adjacent to one side of the second insulating member support hole 711b so as to communicate with one side of the source gas injection space S2, . Each of the plurality of fourth gas supply holes 719 is communicated with the other side of the source gas injection space S2 through the other side of the upper surface plate 710a adjacent to the other side of the second insulating member support hole 711b at regular intervals . Each of the third and fourth gas supply holes 717 and 719 is formed in parallel with each other with the second insulating member support hole 711b interposed therebetween.

The partition wall member 720 includes a top plate 710a that overlaps between the reactive gas injection space S1 and the source gas injection space S2, that is, between the first gas supply hole 713 and the third gas supply hole 717, As shown in Fig. The partition member 720 is formed inside the ground frame 710 to divide the inside of the ground frame 710 into the reaction gas injection space S1 and the source gas injection space S2. The partition member 720 is electrically connected to the ground frame 710 by being integrated or electrically coupled to the ground frame 710.

The reaction gas injection space S1 is formed to be long along the longitudinal direction of the side wall of the long side of the ground frame 710 so as to overlap the first insulating member support hole 711a and the plurality of first and second gas supply holes 713 and 715 .

The source gas injection space S2 is formed in the reaction gas injection space 711b with the partition member 720 interposed therebetween so as to overlap the second insulating member support hole 711b and the plurality of third and fourth gas supply holes 717 and 719 S1).

The first insulating member 730a is made of an insulating material and is inserted into the first insulating member support hole 711a formed in the ground frame 710 and supported by the ground frame 710. [ The first insulating member 730a has a T-shaped cross section and includes a body 732a inserted into the first insulating member support hole 711a of the ground frame 710, A head portion 734a formed on the upper surface of the ground frame 710 and supported on the upper surface of the ground frame 710 and an electrode insertion portion 736a penetrating the head portion 734a and the body 732a. The first insulating member 730a serves to electrically isolate the ground frame 710 from the first plasma electrode member 740a.

The second insulating member 730b is made of an insulating material and is inserted into a second insulating member support hole 711b formed in the ground frame 710 and supported by the ground frame 710. [ The second insulating member 730b has a T-shaped cross section and includes a body 732b inserted into the second insulating member support hole 711b of the ground frame 710, A head portion 734b formed on the upper surface of the ground frame 710 and supported on the upper surface of the ground frame 710 and an electrode inserting portion 736b penetrating the head portion 734b and the body 732b. The second insulating member 730b serves to electrically isolate the ground frame 710 from the second plasma electrode member 740b.

The first plasma electrode member 740a is made of a conductive material and inserted into the electrode inserting portion 736a formed in the first insulating member 730a and protruded to a predetermined height from the lower surface of the ground frame 710, . At this time, the first plasma electrode member 740a is preferably protruded to the same height as the partition wall member 720 and the side walls 710b of the ground frame 710, respectively. To this end, the first plasma electrode member 740a is formed to have a "T" shaped cross section. The first plasma electrode member 740a is electrically connected to the plasma power supply unit 650 through the feed cable 750 so that plasma power can be supplied from the plasma power supply unit 650. [

The second plasma electrode member 740b is made of a conductive material and inserted into the electrode inserting portion 736b formed in the second insulating member 730b and protrudes from the lower surface of the ground frame 710 to a predetermined height, . At this time, the second plasma electrode member 740b is preferably protruded to the same height as the partition wall member 720 and the side walls 710b of the ground frame 710, respectively. To this end, the second plasma electrode member 740b is formed to have a "T" shaped cross section. The second plasma electrode member 740b is electrically connected to the plasma power supply unit 650 through the feed cable 750 so that the plasma power is selectively supplied from the plasma power supply unit 650 depending on the material of the source gas SG .

The reaction gas supply member 760 supplies the reaction gas supplied from the reaction gas supply unit 660 to each of the first and second gas supply holes 713 and 715 formed in the ground frame 710, Are injected into the reaction gas injection space S1 through the plurality of first and second gas supply holes 713 and 715, respectively. To this end, the reaction gas supply member 760 includes a reaction gas supply pipe 762, a plurality of first gas branch pipes 764, and a plurality of first gas connection pipes 766. Since the reaction gas supply member 760 having such a configuration is the same as the above-described embodiment, repetitive description thereof will be omitted.

The source gas supply member 770 supplies the source gas SG supplied from the source gas supply unit 670 to each of the third and fourth gas supply holes 717 and 719 formed in the ground frame 710, So that the gas SG is injected into the source gas injection space S2 through the plurality of third and fourth gas supply holes 717 and 719, respectively. The source gas supply member 770 includes a source gas supply pipe 772, a plurality of second gas branch pipes 774, and a plurality of second gas connection pipes 776. The source supply member 770 having such a configuration is the same as the first embodiment except that each of the plurality of second gas connection pipes 776 communicates with each of the third and fourth gas supply holes 717 and 719, And thus a repetitive description thereof will be omitted.

7, 8, and 17, a substrate processing method using the substrate processing apparatus according to the fourth embodiment of the present invention will be described.

First, a plurality of substrates W are loaded onto the substrate support 620 at regular intervals.

Then, the substrate supporting unit 620 on which the plurality of substrates W are loaded is rotated in a predetermined direction.

Subsequently, plasma power is supplied to the second plasma electrode member 740b of each of the first to fourth electrode modules 630a, 630b, 630c, and 630d, and the source gas of each of the electrode modules 630a, 630b, 630c, A source gas SG is supplied to the injection space S2 and a plasma is formed in each of the source gas injection spaces S2 to form a source gas injection space S2 in each of the electrode modules 630a, 630b, 630c, and 630d And the source gas RG, which has been plasmaized by the plasma, is injected onto the substrate W.

Subsequently, plasma power is supplied to the first plasma electrode member 740a of each of the first to fourth electrode modules 630a, 630b, 630c, and 630d, and the reactive gas of the electrode modules 630a, 630b, 630c, The reaction gas injection space S1 formed in the reaction gas injection space S1 of each of the electrode modules 630a, 630b, 630c, and 630d by supplying the reaction gas RG to the injection space S1 and forming a plasma in each reaction gas injection space S1 And the reaction gas RG plasmaized by the plasma is sprayed onto the substrate W. [ The plurality of substrates W rotated in accordance with the rotation of the substrate supporting unit 620 are irradiated with the plasma source gas SG injected from each of the source gas injection spaces S2 and the reactive gas injection space S1 from the reaction gas injection space S1, Plasma reacted gas RG reacts with each other, thereby causing a predetermined thin film material to be deposited on the substrate W.

In the substrate processing apparatus and the substrate processing method described above, the step of injecting the plasmaized source gas (SG) and the step of injecting the plasmaized reaction gas (RG) may be performed simultaneously or sequentially. In the above-described substrate processing apparatus and substrate processing method, a plasma source is not supplied to the second plasma electrode member 740b, a source gas SG which has not been plasmatized is sprayed onto the substrate W, The reactive gas RG may be sprayed onto the substrate W to deposit the thin film material on the substrate W. [ That is, the source gas SG may be sprayed onto the substrate W in a state of being decomposed or not decomposed by the plasma.

In the substrate processing apparatus according to the fourth embodiment of the present invention described above, each of the first to fourth electrode modules 630a, 630b, 630c, and 630d includes one reaction gas injection space S1 and one source gas The present invention is not limited to this, but may be configured to include a plurality of reaction gas injection spaces S1 and a plurality of source gas injection spaces S2. 16 and 17, the first to fourth electrode modules 630a, 630b, 630c, and 630d are spatially separated by the side walls of the ground frame 710 and the partition 720, One set of reaction gas injection spaces S1 and one source gas injection space S2 may be constituted by one set of modules, and M (where M is a natural number of 2 or more) sets of modules may be consecutively arranged have.

The substrate processing apparatus and the substrate processing method according to the fourth embodiment of the present invention not only provide the same effects as those of the above embodiments but also can be applied to the second plasma electrode member 740b provided in the source gas injection space S2 The plasma can be selectively supplied to jet the plasmaized source gas SG or the non-plasma source gas SG onto the substrate W. [ Accordingly, the substrate processing apparatus and the substrate processing method according to the fourth embodiment of the present invention can selectively perform a thin film deposition process using a source gas that requires decomposition or a thin film deposition process using a source gas that does not require decomposition.

As described above, in the substrate processing apparatus and the substrate processing method according to the first to fourth embodiments of the present invention described above, the electrode portions 630 and 830 are formed on the center portion of the substrate supporting portion 620 630b, 630c, and 630d arranged to be symmetrical with respect to each other in the X-axis direction and the Y-axis direction intersecting with the substrate support portion CP, but the present invention is not limited thereto, 6N), which are symmetrical to each other with respect to a center point (CP) of the electrode module (620).

Although the first to fourth electrode modules 630a, 630b, 630c, and 630d of the electrode units 630 and 830 of the above-described embodiments have the same size (or length), the present invention is not limited thereto. The lengths of the first to fourth electrode modules 630a, 630b, 630c, and 630d may be variously set.

21 is a plan view for explaining modified embodiments of the electrode unit in the substrate processing apparatus according to the first to fourth embodiments of the present invention.

Referring to FIG. 21, the electrode units 630 and 830 according to the modified embodiment include the first to fourth electrode modules 630a, 630b, 630c, and 630d described above, The length of each of the first to fourth electrode modules 630a, 630b, 630c and 630d is set according to the angular velocity of each substrate W rotated by the substrate supporting part 620 do.

Since each of the plurality of substrates W is disposed on the substrate supporting part 620 and rotates in accordance with the rotation of the substrate supporting part 620, the rotation radius RR based on the center point CP of the substrate supporting part 620, And may be divided into an inner region IA and an outer region OA. The inner area IA of the substrate W may be defined as an area corresponding to the inner turning radius RR between the center point CP of the substrate supporting part 620 and the center point of the substrate W, The outer region OA of the substrate W is a region corresponding to the outer radius of rotation RR of the remaining substrates except the inner radius RR between the center point CP of the substrate support portion 620 and the center point of the substrate W Can be defined.

That is, since the plurality of the substrates W are arranged in a circular shape with a predetermined interval, the inner region IA of the substrate W is divided into the inner region IA, the center region CP, And the outer region OA of the substrate W is a region inside the radius of curvature RR of the substrate W with respect to the center point CP of the substrate supporting portion 620, to be. Accordingly, the electrode units 630 and 830 according to the modified embodiment include the first to fourth electrode modules 630a, 630b, 630c, and 630d having a length set according to the angular velocity of each substrate W, The gas exposure time for the inner region IA and the outer region OA of the substrate W can be made uniform.

Specifically, the first and second electrode modules 630a and 630b have the same length in the Y-axis direction and are formed to have the same or longer length than the diameter of the substrate W, The above-described gas is injected into the entire region of each substrate W rotated by the substrate supporting portion 620. [ The first and second electrode modules 630a and 630b are respectively supplied with the same first and second plasma power sources RF1 and RF2 from the plasma power supply unit 650 or the first and second electrode modules 630a and 630b The first and second plasma power sources RF1 and RF2, which are differentially distributed by a power distributing element (not shown) composed of at least one of a variable capacitor and a variable inductor connected to any one of the feed cables, are applied.

Each of the third and fourth electrode modules 630c and 630d has the same length in the X axis direction and is formed to have a length shorter than the diameter of the substrate W, The above-described gas is injected only to the outer region OA of each substrate W rotated by the substrate supporting portion 620. The third and fourth electrode modules 630c and 630d are respectively supplied with the same third and fourth plasma sources RF3 and RF4 from the plasma power supply unit 650 or the third and fourth electrode modules 630c and 630d The third and fourth plasma sources RF3 and RF4, which are differentially distributed by a power distribution element (not shown) composed of at least one of a variable capacitor and a variable inductor connected to any one of the feed cables, are applied.

The electrode portions 630 and 830 according to the modified embodiment compensate for the gas exposure time of each substrate W so as to correspond to the angular speed of the substrate W so that the thin film material is uniformly distributed over the entire region of the substrate W To be deposited.

In the electrode units 630 and 830 according to the modified embodiment, the length of each of the third and fourth electrode modules 630c and 630d in the X-axis direction may be relatively short. For example, as shown in FIGS. 22A and 22B, the fourth electrode module 630d is formed to have a relatively shorter length (or size) than the third electrode module 630c, Or may be arranged so as to overlap the inner region IA of the substrate W or the outer region OA of each substrate W. In this case, the third and fourth plasma power sources RF3 and RF4 are separately applied to the third and fourth electrode modules 630c and 630d from the plasma power supply unit 650, respectively. For example, the fourth electrode module 630d may include a power distribution element (not shown), which is formed of at least one of a variable capacitor and a variable inductor connected to any one of the feed cables of the third and fourth electrode modules 630c and 630d, A fourth plasma power RF4 different from the third plasma power RF3 may be applied according to the power distribution of the first plasma power RF3.

The first and second electrode modules 630a and 630b are formed to have the same shape and structure and are arranged to be symmetrical to each other in the electrode units 630 and 830 according to the modified embodiment described above. The first and second electrode modules 630a and 630b may also be formed to have different lengths (or sizes) and be symmetrical with respect to each other. That is, each of the first and second electrode modules 630a and 630b may have a different length in the Y-axis direction and a length shorter than the diameter of the substrate W. For example, the first electrode module 630a is arranged to overlap the outer region OA of the substrate W, and the second electrode module 630b is arranged to overlap the inner region IA of the substrate W . In this case, the first and second plasma power sources RF1 and RF2 are separately applied to the first and second electrode modules 630a and 630b from the plasma power supply unit 650, respectively. For example, the first electrode module 630a may include a power distribution element (not shown) formed of at least one of a variable capacitor and a variable inductor connected to any one of the feed cables of the first and second electrode modules 630a and 630b, A first plasma power RF1 different from the second plasma power RF2 may be applied according to the power distribution of the first plasma power RF2.

24 to 27 are views for explaining various modifications of the substrate processing method using the substrate processing apparatus according to any one of the first to fourth embodiments of the present invention.

First, in the substrate processing method using the substrate processing apparatus according to any one of the first to fourth embodiments of the present invention, the first to fourth electrode modules 630a, 630b, 630c, SG) and a plasmaized reaction gas (RG) are sprayed onto a rotating substrate to deposit a thin film material on the substrate. On the other hand, in the substrate processing method of the modified embodiment, the first to fourth electrode modules 630a, 630b, 630c, and 630d, respectively, according to the selective driving of each of the reaction gas supply unit, the source gas supply unit, the purge gas supply unit, and the plasma power supply unit Can selectively discharge the plasmaized reaction gas RG, the source gas SG, the plasmaized source gas SG, the purge gas PG and the plasmaized purge gas PG have.

In the substrate processing method of the first modified embodiment, as shown in Fig. 24, some of the electrode modules 630a, 630b, 630c and 630d (for example, the first and second electrode modules 630a 630b injects the source gas SG or the plasmaized source gas SG onto the substrate through only the source gas injection space and the remaining one of the plurality of electrode modules 630a, 630b, 630c, 630d For example, the third and fourth electrode modules 630c and 630d may inject the plasmaized reaction gas (RG) onto the substrate only through the reactive gas injection space.

In the substrate processing method of the second modified embodiment, as shown in Fig. 25, some of the electrode modules 630a, 630b, 630c and 630d (for example, the first and third electrode modules 630a And 630c inject the unreplaced reaction gas RG and the source gas SG onto the substrate through the reaction gas injection space and the source gas injection space and form a plurality of electrode modules 630a, 630b, 630c, and 630d (For example, the second and fourth electrode modules 630b and 630d) may spray the plasmaized reaction gas RG on the substrate only through the plasmaized reaction gas RG .

26, a first group of electrode modules (for example, first electrode modules 630a, 630b, 630c, and 630d) among the plurality of electrode modules 630a, 630b, ) Injects the non-plasmatized reaction gas RG and the source gas SG onto the substrate through the reaction gas injection space and the source gas injection space, and the plurality of electrode modules 630a, 630b, 630c, and 630d The second group of electrode modules (for example, the second and fourth electrode modules 630b and 630d) inject the non-plasmatized reaction gas RG onto the substrate through only the reactive gas injection space, The remaining electrode module (for example, the third electrode module 630c) of the modules 630a, 630b, 630c, and 630d may spray the plasmaized reaction gas RG onto the substrate only through the reactive gas injection space .

In the substrate processing method of the fourth modified embodiment, as shown in Fig. 27, some of the electrode modules 630a, 630b, 630c and 630d (for example, the first and second electrode modules 630a 630b injects a mixed gas RG + PG of the reaction gas RG and the purge gas PG, which have been plasmaized through only the reaction gas injection space, onto the substrate, and the plurality of electrode modules 630a, 630b, 630c (For example, the third and fourth electrode modules 630c and 630d) of the first, second and third electrode modules 630a and 630d are connected to the source gas SG or the plasmaized source gas SG It can be sprayed.

As a result, according to the substrate processing method of the first to fourth modified embodiments described above, the plurality of electrode modules 630a, 630b, 630c, and 630d of the substrate processing apparatuses according to the first to third embodiments of the present invention described above, Each of which selectively injects at least one kind of gas selected from a plasmaized reaction gas, a source gas, a purge gas, and a plasmaized purge gas onto a substrate. At this time, some electrode modules among the plurality of electrode modules 630a, 630b, 630c, and 630d may inject only one kind of gas of the plasmaized reaction gas, the source gas, the purge gas, and the plasmaized purge gas onto the substrate .

According to the substrate processing method of the first to fourth modified embodiments described above, each of the plurality of electrode modules 630a, 630b, 630c, and 630d of the substrate processing apparatus according to the fourth embodiment of the present invention described above is plasma- And at least one kind of gas selected from a reaction gas, a source gas, a plasmaized source gas, a purge gas, and a plasmaized purge gas is selectively injected onto the substrate. At this time, some electrode modules of the plurality of electrode modules 630a, 630b, 630c, and 630d are connected to at least one kind of gas among a plasmaized reaction gas, a source gas, a plasmaized source gas, a purge gas, and a plasmaized purge gas Can be injected onto the substrate.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

610: process chamber 620: substrate support
630: electrode part 650: plasma power supply part
660: Reaction gas supply unit 670: Source gas supply unit
710: ground frame 720: partition wall member
730: Insulating member 740: Plasma electrode member
750: Feed cable 760: Reaction gas supply member
770: Source gas supply member 780: Purge gas supply member

Claims (7)

A process chamber;
A substrate support rotatably installed in the process chamber and supporting a plurality of substrates;
A chamber lid that covers the top of the process chamber and faces the substrate support; And
And a plurality of electrode modules provided in the chamber lid,
Wherein at least one of the plurality of electrode modules is different in size. The method according to claim 1,
When the direction toward the outside from the central point of the substrate supporting portion is the longitudinal direction of the electrode module,
Wherein a length of at least one of the plurality of electrode modules is different from a length of the other electrode module. 3. The method of claim 2,
Wherein a length of at least one electrode module among the plurality of electrode modules is shorter than a diameter of the substrate and a length of at least one of the electrode modules is longer than or equal to a diameter of the substrate. The method of claim 3,
Wherein the substrate is arranged in a circular shape with a predetermined distance with respect to a center point of the substrate support,
And a distance from a central point of the substrate supporting portion to a center point of the substrate is a turning radius of the substrate,
The electrode module having a length shorter than the diameter of the substrate is located in an inner region or an outer region of the radius of rotation,
Wherein the electrode module is positioned such that the electrode module is longer than the diameter of the substrate or overlaps the substrate. 5. The method of claim 4,
Wherein the number of the electrode modules is 2N (N = natural numbers). 6. The method of claim 5,
Wherein the plurality of electrode modules are symmetrical with respect to each other with respect to a center point of the substrate support portion. 6. The method of claim 5,
The electrode modules of mutually corresponding lengths of the plurality of electrode modules face each other with respect to the center point of the substrate supporting portion,
Wherein the electrode module having a length shorter than the diameter of the substrate is asymmetric with respect to a center point of the substrate supporting portion.

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