WO2014003434A1 - Appareil de traitement de substrat et procédé de traitement de substrat - Google Patents

Appareil de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2014003434A1
WO2014003434A1 PCT/KR2013/005647 KR2013005647W WO2014003434A1 WO 2014003434 A1 WO2014003434 A1 WO 2014003434A1 KR 2013005647 W KR2013005647 W KR 2013005647W WO 2014003434 A1 WO2014003434 A1 WO 2014003434A1
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WO
WIPO (PCT)
Prior art keywords
gas
substrate
gas injection
surface treatment
thin film
Prior art date
Application number
PCT/KR2013/005647
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English (en)
Korean (ko)
Inventor
곽재찬
강성규
정훈
조병하
Original Assignee
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130071129A external-priority patent/KR102070400B1/ko
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to US14/411,477 priority Critical patent/US10233542B2/en
Priority to CN201380034858.3A priority patent/CN104395987B/zh
Priority to JP2015520013A priority patent/JP6265983B2/ja
Publication of WO2014003434A1 publication Critical patent/WO2014003434A1/fr
Priority to US16/264,670 priority patent/US20190161861A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for depositing a thin film on a substrate.
  • a semiconductor device In order to manufacture a solar cell, a semiconductor device, a flat panel display, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a surface of a substrate.
  • Semiconductor manufacturing processes such as a thin film deposition process, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for forming a pattern by removing the thin film of the selectively exposed portion are performed.
  • Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed in an optimal environment for the process, and in recent years, many substrate processing apparatuses that perform deposition or etching processes using plasma are widely used.
  • the substrate processing apparatus using plasma includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, and a plasma etching apparatus for etching and patterning a thin film.
  • PECVD plasma enhanced chemical vapor deposition
  • plasma etching apparatus for etching and patterning a thin film.
  • FIG. 1 is a diagram schematically illustrating a general substrate processing apparatus.
  • a general substrate processing apparatus includes a chamber 10, a plasma electrode 20, a susceptor 30, and a gas ejection means 40.
  • the chamber 10 provides a process space for the substrate processing process. At this time, one bottom surface of the chamber 10 communicates with an exhaust port 12 for exhausting the process space.
  • the plasma electrode 20 is installed on the upper portion of the chamber 10 to seal the process space.
  • One side of the plasma electrode 20 is electrically connected to an RF (Radio Frequency) power source 24 through the matching member 22.
  • the RF power source 24 generates RF power and supplies the RF power to the plasma electrode 20.
  • the central portion of the plasma electrode 20 is in communication with a gas supply pipe 26 for supplying a process gas for the substrate processing process.
  • the matching member 22 is connected between the plasma electrode 20 and the RF power supply 24 to match the load impedance and the source impedance of the RF power supplied from the RF power supply 24 to the plasma electrode 20.
  • the susceptor 30 supports a plurality of substrates W installed in the chamber 10 and loaded from the outside.
  • the susceptor 30 serves as a counter electrode (or a ground electrode) opposed to the plasma electrode 20.
  • the gas injection means 40 is installed below the plasma electrode 20 so as to face the susceptor 30. At this time, a gas diffusion space 42 is formed between the gas injection means 40 and the plasma electrode 20 through which the process gas supplied from the gas supply pipe 26 penetrating the plasma electrode 20 is diffused. The gas injection means 40 injects the process gas into the process space through the plurality of gas injection holes 14 communicated with the gas diffusion space 42.
  • the substrate W is loaded on the susceptor 30, and then plasma is supplied by supplying RF power to the plasma electrode 20 while spraying a predetermined process gas into the process space of the chamber 10.
  • plasma is supplied by supplying RF power to the plasma electrode 20 while spraying a predetermined process gas into the process space of the chamber 10.
  • impurities may be present on the surface and the inside of the thin film deposited on the substrate W by the thin film deposition process, thereby reducing the film quality.
  • the present invention is to solve the above problems, to provide a substrate processing apparatus and a substrate processing method that can perform the thin film deposition process and the surface treatment process of the thin film in one process space sequentially or repeatedly. It is a task.
  • the substrate processing apparatus for achieving the above technical problem is a process chamber for providing a process space; A substrate support installed in the process chamber to support at least one substrate and to move the supported substrate in a predetermined direction; A chamber lid covering an upper portion of the process chamber to face the substrate support; And a gas installed in the chamber lid so as to face the substrate support, and spatially separating a process gas for depositing a thin film on the substrate and a surface treatment gas for surface treatment of the thin film, and locally spraying on the substrate support. It may be configured to include an injection unit.
  • a substrate processing method including: mounting at least one substrate on a substrate support provided in a process space of a process chamber; Moving the substrate by driving the substrate support; And spraying the process gas for depositing a thin film on the substrate in the process space and the surface treating gas for surface treatment of the thin film by spatially separating the process gas.
  • the process gas is composed of a source gas and a reactive gas for forming the thin film, the surface treatment gas is activated by a plasma is injected between the source gas and the region in which the reactive gas is injected, argon gas or It may be made of helium gas.
  • the substrate processing apparatus and the substrate processing method according to the present invention sequentially or thin film deposition process in the process space of the process chamber and the surface treatment process for removing impurities present in the thin film deposited on the substrate or By performing periodically, the film quality and density of the thin film formed on the substrate can be improved.
  • the present invention performs a surface treatment process within a short time after depositing a thin film on the substrate, the surface treatment gas can penetrate deeply into the inside of the thin film to increase the surface treatment efficiency.
  • FIG. 1 is a diagram schematically illustrating a general substrate processing apparatus.
  • FIG. 2 is a perspective view schematically illustrating a substrate processing apparatus according to a first embodiment of the present invention.
  • FIG. 3 is a diagram conceptually illustrating an arrangement structure of the gas injection unit illustrated in FIG. 2.
  • FIG. 4 is a cross-sectional view schematically illustrating a cross section of the gas injection module illustrated in FIG. 3.
  • FIG. 5 is a view for explaining another embodiment of the substrate processing method according to the first embodiment of the present invention.
  • FIG. 6 is a perspective view schematically illustrating a substrate processing apparatus according to a second embodiment of the present invention.
  • FIG. 7 is a diagram conceptually illustrating an arrangement structure of the gas injection unit illustrated in FIG. 6.
  • FIG. 8 is a view for explaining another embodiment of the substrate processing method according to the second embodiment of the present invention.
  • FIG. 9 is a cross-sectional view for describing a gas injection module according to a modified first embodiment in the substrate processing apparatus of the first and second embodiments of the present invention.
  • FIG. 10 is a cross-sectional view for describing a gas injection module according to a second embodiment in the substrate processing apparatus of the first and second embodiments of the present invention.
  • 11 and 12 are views for explaining a gas injection unit according to a modified embodiment of the substrate processing apparatus of the first and second embodiments of the present invention.
  • FIG. 14 is a cross-sectional view schematically illustrating a cross section of the process gas injection module illustrated in FIG. 13.
  • FIG. 15 is a cross-sectional view for describing a process gas injection module according to a modified first embodiment in the substrate processing apparatus according to the third embodiment of the present invention.
  • FIG. 16 is a cross-sectional view for describing a process gas injection module according to a second modification of the substrate processing apparatus according to the third embodiment of the present invention.
  • 17 is a cross-sectional view for describing a process gas injection module according to a third modified embodiment of the substrate processing apparatus according to the third embodiment of the present invention.
  • FIG. 18 is a diagram conceptually showing an arrangement structure of a gas injection unit in the substrate processing apparatus according to the fourth embodiment of the present invention.
  • 19 is a graph showing a comparison of specific resistance according to the thickness of a thin film formed by the substrate processing process of the present invention, the conventional CVD process and the ALD process, respectively.
  • 20 is a graph showing comparison of surface roughness according to the thickness of a thin film formed by each of the present invention and a conventional substrate processing process.
  • At least one should be understood to include all combinations which can be presented from one or more related items.
  • the meaning of "at least one of the first item, the second item, and the third item" means two items of the first item, the second item, or the third item, as well as two of the first item, the second item, and the third item, respectively.
  • FIG. 2 is a perspective view schematically illustrating a substrate processing apparatus according to a first embodiment of the present invention
  • FIG. 3 is a view conceptually illustrating an arrangement structure of a gas injection unit shown in FIG. 2, and
  • FIG. 4 is illustrated in FIG. 3. It is sectional drawing which shows the cross section of a gas injection module schematically.
  • the substrate processing apparatus is installed on the bottom of the process chamber 110 and the process chamber 110 to provide a process space, and at least one substrate W.
  • the chamber lid 130 As shown in FIG. ) Is installed in the chamber lid 130 so as to face the substrate support 120 supporting the substrate 120, the chamber lid 130 covering the upper portion of the process chamber 110, and the chamber lid 130.
  • a gas injection unit 140 for performing a thin film deposition process for depositing a thin film on (W) and a surface treatment process for the thin film deposited on the substrate (W).
  • the process chamber 110 provides a process space for a substrate processing process, for example, a thin film deposition process.
  • the bottom surface and / or side surface of the process chamber 110 may be in communication with an exhaust port (not shown) for exhausting the gas of the process space.
  • the substrate support part 120 is rotatably installed on the inner bottom surface of the process chamber 110.
  • the substrate support 120 is supported by a drive shaft (not shown) that penetrates the central bottom surface of the process chamber 110, and is electrically floating, having a potential, or grounded.
  • the drive shaft exposed to the outside of the lower surface of the process chamber 110 is sealed by a bellows (not shown) installed on the lower surface of the process chamber 110.
  • the substrate support part 120 supports at least one substrate W loaded from an external substrate loading device (not shown).
  • the substrate support part 120 may have a disc shape.
  • the substrate W may be a semiconductor substrate or a wafer.
  • the substrate support part 120 may be disposed at regular intervals such that the plurality of substrates W have a circular shape.
  • the substrate support part 120 is rotated in a predetermined direction (for example, counterclockwise direction) according to the driving of the driving shaft to move each substrate (W).
  • a predetermined direction for example, counterclockwise direction
  • the process gas and the surface treatment gas TG locally injected from the gas injector 140 sequentially arrive at each of the substrates W to be moved, so that the upper surface of the substrate W may have an ALD ( A predetermined thin film is deposited by an Atomic Layer Deposition process, and impurities of the thin film deposited on the substrate W are removed by the surface treatment process by the surface treatment gas TG.
  • the substrate support part 120 serves to move the substrate W so that the ALD process and the surface treatment process are sequentially (or continuously) performed in the process space.
  • the chamber lid 130 is installed on the process chamber 110 to cover the top of the process chamber 110 to cover the top of the process chamber 110 to seal the process space.
  • the process chamber 110 and the chamber lid 130 may be formed in a hexagonal structure as shown in FIG. 2, but may also be formed in a polygonal structure, an elliptical structure, or a circular structure. In this case, in the case of the polygonal structure, the process chamber 110 may have a structure that is divided into a plurality of combinations.
  • the chamber lid 130 is provided with a plurality of module mounting parts 130a, 130b, 130c, and 130d in which the gas injection parts 140 are inserted so as to have a predetermined interval, for example, a radial shape.
  • the plurality of module installation units 130a, 130b, 130c, and 130d may be spread out based on the center point of the chamber lid 130.
  • the center point may be spaced apart from each other at uniform intervals. In addition, they may be spaced apart from each other at the same or different angles at a predetermined angle with respect to the center point.
  • the module leads 130a, 130b, 130c, and 130d are formed in the chamber lid 130 in FIG. 2, the chamber lid 130 is not limited thereto.
  • N may be a natural number) or 2N + 1 module installation unit.
  • the chamber lead 130 includes the first to fourth module installation units 130a, 130b, 130c, and 130d.
  • the gas injector 140 is inserted into the chamber lid 130 so as to face the substrate support 120 locally so as to spatially separate the process gas and the surface treatment gas TG so as to be locally on the substrate support 120.
  • the ALD process and the surface treatment process described above are sequentially performed in one cycle or sequentially (or alternately) in each cycle.
  • the substrate support 120 may be defined as one rotation.
  • the process gas may include a source gas SG and a reaction gas RG for forming a thin film on the substrate W.
  • the source gas SG may include titanium group elements (Ti, Zr, Hf, etc.), silicon (Si), aluminum (Al), and the like.
  • the source gas SG including titanium (Ti) may be titanium tetrachloride (TiCl 4) gas or the like.
  • the source gas SG containing a silicon (Si) material may be a silane (SiH 4) gas, a disilane (Si 2 H 6) gas, a trisilane (Si 3 H 8) gas, a TEOS (Tetraethylorthosilicate) gas, or a DCS (DCS).
  • the reaction gas RG is hydrogen (H 2) gas, nitrogen (N 2) gas, oxygen (O 2) gas, nitrogen dioxide (NO 2) gas, ammonia (NH 3) gas, steam (H 2 O) gas, ozone (O 3) gas, or the like. It may be made, including.
  • the reaction gas RG may include a purge gas including nitrogen (N 2) gas, argon (Ar) gas, xenon (Ze) gas, helium (He) gas, or the like.
  • the surface treatment gas TG is hydrogen (H 2) gas, nitrogen (N 2) gas, hydrogen (H 2) gas and nitrogen (N 2) mixed gas, oxygen (O 2) gas, nitrous oxide (N 2 O) gas, argon ( Ar) gas, helium (He) gas, or ammonia gas (NH 3) may be included.
  • the gas injector 140 includes a process gas injector 142 and a surface treatment gas injector 144.
  • the process gas injector 142 is installed in each of the first to third module installation units 130a, 130b, and 130c of the chamber lid 130 to spatially separate the source gas SG and the reactive gas RG. It is separated and sprayed downward on the substrate support 120.
  • the process gas injection unit 142 may include one source gas injection module 142a and first and second reactive gas injection modules 142b and 142c.
  • the source gas injection module 142a is inserted into and installed in the first module installation unit 130a of the chamber lid 130 so as to face the substrate support unit 120 locally.
  • the source gas injection module 142a downwards the source gas SG supplied from an external source gas supply means (not shown) to the first gas injection region 120a defined locally on the substrate support 120. Spray.
  • the first gas injection region 120a may be defined as a process space between the first module installation unit 130a and the substrate support unit 120.
  • the source gas injection module 142a includes a housing 210 and a gas supply hole 220.
  • the housing 210 is formed in a rectangular box shape so as to have a gas injection space 212 provided with an open bottom surface, and downwardly injects the source gas SG supplied to the gas injection space 212.
  • the housing 210 includes a ground plate 210a and a ground sidewall 210b.
  • the ground plate 210a is formed in a flat plate shape and coupled to an upper surface of the chamber lid 130.
  • the ground plate 210a is electrically connected to the chamber lead 130 to be electrically grounded through the chamber lead 130.
  • the ground sidewall 210b protrudes to have a predetermined height from an edge portion of the bottom surface of the ground plate 210a to provide a gas injection space 212.
  • the ground sidewall 210b is inserted into the first module installation unit 130a provided in the chamber lead 130 described above.
  • the bottom surface of the ground sidewall 210b is not disposed on the same line as the bottom surface of the chamber lid 130 or protrudes from the bottom surface of the chamber lid 130.
  • the gas injection space 212 is surrounded by the ground sidewall 210b to have a gas injection hole communicating with the first gas injection region 120a of the process space.
  • the gas injection space 212 is formed to have a length greater than the length of the substrate W seated on the substrate support 120.
  • the gas supply hole 220 is formed to vertically penetrate the ground plate 210a and communicates with the gas injection space 212.
  • the gas supply holes 220 may be formed in plural to have a predetermined interval along the length direction of the ground plate 210a.
  • the gas supply hole 220 is connected to an external source gas supply means through a gas supply pipe (not shown) to supply the source gas SG supplied from the source gas supply means to the gas injection space 212. Accordingly, the source gas SG is diffused in the gas injection space 212 and downwardly injected into the above-described first gas injection region 120a through the gas injection hole of the gas injection space 212. Is moved according to the rotation of) and is injected to the substrate W passing through the lower portion of the source gas injection module 142a, that is, the first gas injection region 120a.
  • the first reactive gas injection module 142b is inserted into the second module installation unit 130b of the chamber lid 130 so as to be spatially separated from the source gas injection module 142a. Is installed.
  • the first reactive gas injection module 142b is configured to locally define the reactive gas RG supplied from an external reactive gas supply means (not shown) on the substrate support 120. Spray on downwards.
  • the second gas injection region 120b may be defined as a process space between the second module installation unit 130b and the substrate support 120 to be spatially separated from the first gas injection region 120a.
  • the first reactive gas injection module 142b includes a housing 210 and a gas supply hole 220. Since it is the same, duplicate description thereof will be omitted.
  • the first reactive gas injection module 142b supplies the reactive gas RG supplied to the gas injection space 212 from the external reactive gas supply means to the second gas injection region 120b through the gas supply hole 220. Spray downward. Accordingly, the reaction gas RG is moved along with the rotation of the substrate supporter 120 to pass through the lower portion of the first reaction gas injection module 142b, that is, the second gas injection region 120b. Is sprayed on.
  • the second reactive gas injection module 142c may be connected to the third module installation unit 130c of the chamber lid 130 so as to be spatially separated from each of the source gas injection module 142a and the first reactive gas injection module 142b.
  • the insertion and installation is symmetrical with the source gas injection module 142a from the center of the chamber lid 130.
  • the second reactive gas injection module 142c injects the reactive gas RG supplied from the reactive gas supply means downward into the third gas injection region 120c locally defined on the substrate support 120.
  • the third gas injection region 120c is a process space between the third module installation unit 130c and the substrate support unit 120 so as to be spatially separated from each of the first and second gas injection regions 120a and 120b. It can be defined as.
  • the second reactive gas injection module 142c includes a housing 210 and a gas supply hole 220, which is the same as the source gas injection module 142a described above. Since it is the same, duplicate description thereof will be omitted.
  • the second reactive gas injection module 142c supplies the reactive gas RG supplied to the gas injection space 212 from the external reactive gas supply means to the third gas injection region 120c through the gas supply hole 220. Spray downward. Accordingly, the reaction gas RG is moved along with the rotation of the substrate supporter 120 to pass through the lower portion of the second reaction gas injection module 142c, that is, the third gas injection region 120c. Is sprayed on.
  • the surface treatment gas injector 144 is installed in the fourth module installation unit 130d of the chamber lid 130 so as to be spatially separated from the process gas injector 142 so as to provide an external surface treatment gas supply means (not shown).
  • the surface treatment gas TG supplied from the gas is locally sprayed onto the substrate support 120.
  • the surface treatment gas injection unit 144 includes one surface treatment gas injection module 144a.
  • the surface treatment gas injection module 144a is provided with a fourth module of the chamber lid 130 so as to be spatially separated from the source gas injection module 142a and the first and second reactive gas injection modules 142b and 142c. By being inserted into the unit 130d, the central portion of the chamber lid 130 described above is symmetrical with the first reactive gas injection module 142b from a reference.
  • the surface treatment gas injection module 144a injects the surface treatment gas TG supplied from the surface treatment gas supply means downward into the fourth gas injection region 120d locally defined on the substrate support 120. .
  • the fourth gas injection region 120d may be disposed between the fourth module installation unit 130d and the substrate support unit 120 so as to be spatially separated from each of the first to third gas injection regions 120a, 120b, and 120c. It can be defined as a process space.
  • the surface treatment gas injection module 144a includes a housing 210 and a gas supply hole 220, which is the same as the source gas injection module 142a described above. Therefore, duplicate description thereof will be omitted.
  • the surface treatment gas injection module 144a receives the surface treatment gas TG supplied from the external surface treatment gas supply means to the gas injection space 212 through the gas supply hole 220 in the fourth gas injection region 120d. Spray on downwards. Accordingly, the surface treatment gas TG is moved in accordance with the rotation of the substrate supporter 120 to pass through the lower portion of the surface treatment gas injection module 144a, that is, the fourth gas injection region 120d. Is sprayed on.
  • the substrate processing method using the substrate processing apparatus according to the embodiment of the present invention described above is as follows.
  • the plurality of substrates W are loaded on the substrate support part 120 at regular intervals and seated thereon.
  • the substrate support 120 on which the plurality of substrates W are loaded and seated is rotated in a predetermined direction (for example, counterclockwise direction).
  • the source gas SG, the reaction gas RG, and the surface treatment gas TG are spatially separated through the process gas injector 142 and the surface treatment gas injector 144 described above, respectively.
  • Down injection is performed in the fourth gas injection regions 120a, 120b, 120c, and 120d.
  • the source gas SG is injected downward into the first gas injection region 120a through the source gas injection module 142a and the reaction gas RG is injected in the first and second reaction gases described above.
  • each of the source gas SG, the reaction gas RG, and the surface treatment gas TG may be simultaneously sprayed or sequentially sprayed according to the rotational speed of the substrate support 120 and the movement of the substrate W.
  • each of the plurality of substrates W passes through each of the first to third gas injection regions 120a, 120b, and 120c according to the rotation of the substrate supporter 120. It is exposed to the source gas SG and the reactive gas RG injected to the 120a, 120b, and 120c. As a result, the plurality of substrates W are each reacted with the reaction of the source gas SG and the reactive gas RG. Certain thin films are deposited.
  • the substrate W on which the predetermined thin film is deposited passes through the fourth gas injection region 120d according to the rotation of the substrate support part 120, and thus the surface treatment gas injected into the fourth gas injection region 120d ( TG). In this case, the surface treatment gas TG removes impurities and the like on the surface and the inside of the thin film by treating the thin film deposited on the substrate W.
  • the above-described source gas injection module 142a may inject a source gas SG including titanium tetrachloride (TiCl 4) gas, and Each of the first and second reaction gas injection modules 142b and 142c injects a reaction gas RG made of ammonia (NH 3) gas, and the surface treatment gas injection module 144a uses hydrogen (H 2) gas and nitrogen (N 2).
  • the surface treatment gas TG which consists of gas mixture gas can be injected.
  • a thin film of titanium nitride (TiN) is deposited on the substrate W by a mutual reaction between a source gas SG including titanium tetrachloride (TiCl 4) gas and a reaction gas RG consisting of ammonia (NH 3) gas.
  • the chlorine component which is an impurity present in the surface and the inside of the titanium nitride (TiN) thin film deposited on the substrate W, may be a surface treatment gas composed of a mixed gas of hydrogen (H 2) gas and nitrogen (N 2) gas. TG) is combined to remove hydrogen chloride (HCl) gas and nitrogen (N2) gas.
  • FIG. 5 is a view for explaining another embodiment of the substrate processing method according to the first embodiment of the present invention, which is a thin film deposition on the substrate W seated at 12 o'clock of the substrate support part 120 in FIG. 3. It is for demonstrating an example of a process and a surface treatment process.
  • a thin film deposition process and a surface treatment process on the substrate W may be sequentially performed during one cycle in which the substrate support 120 rotates once.
  • the substrate W continuously passes through the first to eighth sections P1 to P8 defined on the substrate support 120 according to one rotation of the substrate support 120. Accordingly, the source gas SG, the reaction gas RG, the reaction gas RG, and the surface treatment gas TG reach the substrate W sequentially. That is, the source gas SG injected into the first gas injection region 120a reaches the substrate W during the second period P2 of one cycle, and the fourth and sixth periods P4, The reaction gas RG injected into the second and third gas injection regions 120b and 120c arrives at the substrate W during P6, and the substrate W is exposed to the substrate W during the eighth section P8 of one cycle. The surface treatment gas TG injected to the surface treatment gas injection region 120d arrives.
  • the substrate W may include a source gas SG and a reaction gas based on an ALD process.
  • a predetermined thin film is deposited by the mutual reaction of RG).
  • impurities, etc., contained in the surface and the inside of the thin film deposited on the substrate W may be removed. It removes by the surface treatment process by the surface treatment gas TG injected to the 4th gas injection area
  • the source gas SG, the reaction gas RG, and the surface treatment gas TG are simultaneously sprayed for one cycle, but the present invention is not limited thereto.
  • the reaction gas RG, and the surface treatment gas TG may be sequentially sprayed every cycle. For example, after injecting only the source gas SG during the first cycle, only the reactive gas RG may be injected during the second cycle, and then only the surface treatment gas TG may be injected during the third cycle. .
  • the substrate processing apparatus and the substrate processing method according to the first embodiment of the present invention include a thin film deposition process for depositing a thin film on the substrate W in a process space and impurities present in the thin film deposited on the substrate W.
  • the film quality of the thin film formed on the substrate W may be improved by sequentially or repeatedly performing the surface treatment process of removing the film, and the film quality control of the thin film may be facilitated through an ALD thin film deposition process.
  • the present invention performs a surface treatment process within a short time after depositing a thin film on the substrate, the surface treatment gas can penetrate deep into the inside of the thin film to increase the surface treatment efficiency as well as the film quality, In particular at the same thickness it is possible to reduce the resistivity and surface roughness.
  • FIG. 6 is a perspective view schematically illustrating a substrate processing apparatus according to a second embodiment of the present invention
  • FIG. 7 conceptually illustrates an arrangement structure of the gas injection unit illustrated in FIG. 6.
  • the substrate processing apparatus may include a process chamber 110, a substrate support 120, a chamber lid 130, and a gas injector 140. It is configured to include.
  • the other components except for the gas injection unit 140 are the same as the substrate processing apparatus according to the first embodiment of the present invention. Duplicate explanations will be omitted.
  • the gas injector 140 includes a process gas injector 142, a surface treatment gas injector 144, and a purge gas injector module 146.
  • each of the process gas injector 142 and the surface treatment gas injector 144 is the same as the substrate treating apparatus according to the first embodiment of the present invention described above, redundant description thereof will be omitted.
  • the purge gas injection module 146 is installed in the chamber lid 130 so as to overlap the purge gas injection region 120e defined between the first to fourth gas injection regions 120a, 120b, 120c, and 120d. Accordingly, the purge gas injection module 146 is disposed between the process gas injection unit 142 and the surface treatment gas injection unit 144, that is, the source gas injection module 142a described above and the first and second reaction gases described above. It is disposed between the injection modules 142b and 142c and the surface treatment gas injection module 144a described above.
  • the purge gas injection module 146 is formed to have a shape of "+”, “x”, or “*" according to the arrangement of the process gas injector 142 and the surface treatment gas injector 144. And is inserted into the purge gas injection module installation unit 130e formed in the chamber lid 130.
  • the purge gas injection module 146 injects a purge gas supplied from a purge gas supply unit (not shown) to the outside to each of the plurality of purge gas injection spaces 120e.
  • the purge gas may serve to purge the remaining reactive gas RG without reacting with the source gas SG and / or the source gas SG not deposited on the substrate W.
  • the purge gas is injected between the first to fourth gas injection regions 120a, 120b, 120c, and 120d to form an air curtain, thereby forming the first to fourth gas injection regions 120a, 120b, 120c, and 120d. It also performs a role of spatial separation of the gas being injected in the.
  • the purge gas may be made of an inert gas.
  • the purge gas injection region 120e defined between the first to fourth gas injection regions 120a, 120b, 120c, and 120d is used. Except for further spraying the purge gas to the same as the substrate processing method using the substrate processing apparatus according to the first embodiment of the present invention described above. Accordingly, the second embodiment of the present invention purges the remaining reactive gas RG without reacting with the source gas SG and / or the source gas SG not deposited on the substrate W using the purge gas. By doing so, the film quality of the thin film deposited on the substrate W can be further improved.
  • FIG. 8 is a view for explaining another embodiment of the substrate processing method according to the second embodiment of the present invention, which is a thin film deposition on the substrate W seated at 12 o'clock of the substrate support part 120 in FIG. 7. It is for demonstrating an example of a process and a surface treatment process.
  • a thin film deposition process and a surface treatment process may be sequentially performed on the substrate W during one cycle in which the substrate support 120 rotates once.
  • the substrate W continuously passes through the first to eighth sections P1 to P8 defined on the substrate support 120 according to one rotation of the substrate support 120. Accordingly, the substrate W has a purge gas PG, a source gas SG, a purge gas PG, a reaction gas RG, a purge gas PG, a reaction gas RG, and a purge gas PG.
  • the surface treating gas TG arrive sequentially. That is, the purge gas PG injected to the purge gas injection region 120e reaches the substrate W during the first, third, fifth, and seventh periods P1, P3, P5, and P7 of one cycle.
  • the source gas SG injected into the first gas injection region 120a arrives at the substrate W during the second period P2 of one cycle, and the fourth and sixth periods P4,
  • the reaction gas RG injected into the second and third gas injection regions 120b and 120c arrives at the substrate W during P6, and the substrate W is exposed to the substrate W during the eighth section P8 of one cycle.
  • the surface treatment gas TG injected into the surface treatment gas injection region 120d arrives.
  • the substrate W passes through the first to seventh periods P1 to P7 of one cycle as the substrate support part 120 rotates, the substrate W has a source gas SG based on an ALD process. ) And a predetermined thin film are deposited by the mutual reaction of the reaction gas RG.
  • a part of the source material deposited on the surface of the substrate W by the source gas SG that is, a source material not deposited on the substrate W is purge gas PG. Is removed, and in the fifth and seventh sections P5 and P7 of one cycle, the remaining reaction gas RG, which does not react with the source gas SG, is removed by the purge gas PG.
  • impurities, etc., contained in the surface and the inside of the thin film deposited on the substrate W may be removed. It removes by the surface treatment process by the surface treatment gas TG injected to the 4th gas injection area
  • the source gas SG, the reaction gas RG, and the surface treatment gas TG are simultaneously sprayed for one cycle, but the present invention is not limited thereto, and the purge gas PG is not limited thereto.
  • each of the source gas (SG), the reaction gas (RG), and the surface treatment gas (TG) may be sequentially sprayed every cycle.
  • the surface treatment gas TG may be injected during at least one of the first to third cycles.
  • the substrate processing apparatus and the substrate processing method according to the second embodiment of the present invention do not react with the source gas SG and / or the source gas SG which are not deposited on the substrate W using the purge gas. It is possible to further improve the film quality of the thin film deposited on the substrate W by purging the remaining reaction gas RG.
  • FIG. 9 is a cross-sectional view illustrating a gas injection module according to a modified first embodiment in the substrate processing apparatus of the first and second embodiments of the present invention, which is a gas injection space of the gas injection module illustrated in FIG.
  • the gas injection pattern member 230 is additionally formed at 212. In the following, only different configurations will be described.
  • the gas injection pattern member 230 is supplied to the above-described gas injection space 212 to increase the injection pressure of the gases SG, RG, and TG injected downward onto the substrate support 120.
  • the gas injection pattern member 230 is formed in the form of an insulating plate (or shower head) of an insulating material that is integrated with the lower surface of the ground side wall 210b to cover the gas injection hole of the gas injection space 212 or has no polarity. And may be coupled to the bottom surface of the ground sidewall 210b to cover the gas injection hole of the gas injection space 212.
  • the gas injection space 212 is provided between the ground plate 210a and the gas injection pattern member 230 so that the gas supplied to the gas injection space 212 through the gas supply hole 220 is provided (SG). , RG and TG are diffused and buffered inside the gas injection space 212.
  • the gas injection pattern member 230 includes a gas injection pattern 232 for injecting the gas SG, RG, and TG supplied to the gas injection space 212 downward toward the substrate W.
  • the gas injection pattern 232 is formed in the form of a plurality of holes (or a plurality of slits) penetrating the gas injection pattern member 230 so as to have a predetermined interval and is supplied to the gas injection space 212 (SG, RG and TG) are injected downward at a predetermined pressure.
  • the diameter and / or spacing of each of the plurality of holes may be set such that a uniform amount of gas is injected into the entire area of the substrate W that is moved based on the angular velocity according to the rotation of the substrate support 120.
  • the diameter of each of the plurality of holes may increase from the inside of the gas injection module adjacent to the center portion of the substrate support 120 toward the outside of the gas injection module adjacent to the edge portion of the substrate support 120.
  • the above-described gas injection pattern member 230 injects the gas SG, RG, and TG downwardly through the gas injection pattern 232, and has a shape of a plate in which holes are formed. Delaying or staggering the injection reduces the amount of gas used and increases the efficiency of use of the gas.
  • FIG. 10 is a cross-sectional view illustrating a gas injection module according to a second embodiment in the substrate processing apparatus of the first and second embodiments of the present invention, which is a gas injection space of the gas injection module illustrated in FIG.
  • the plasma electrode 250 is additionally formed at 212. In the following, only different configurations will be described.
  • the source gas, the reaction gas, and the surface treatment gas are sprayed onto the substrate without being activated.
  • the substrate processing apparatus of the first and second embodiments of the present invention is characterized by activating and spraying at least one kind of gas from a source gas, a reaction gas, and a surface treatment gas onto a substrate.
  • the source gas injection module 142a, the first and second reactive gas injection modules 142b and 142c, and the surface treatment gas injection module 144a according to the second modified embodiment are inserted into the gas injection space 212. It may be configured to further comprise a plasma electrode 250.
  • an insulating member insertion hole 222 communicating with the gas injection space 212 is formed in the ground plate 210a of the housing 210, and an insulating member 240 is inserted into the insulating member insertion hole 222. do.
  • An electrode insertion hole 242 is formed in the insulating member 240 to communicate with the gas injection space 212, and the plasma electrode 250 is inserted into the electrode insertion hole 242.
  • the plasma electrode 250 is inserted into the gas injection space 212 and is disposed in parallel with the ground sidewall 210b.
  • the bottom surface of the plasma electrode 250 may be positioned on the same line HL as the bottom surface of the ground sidewall 210b or protrude to have a predetermined height from the bottom surface of the ground sidewall 210b.
  • the ground sidewall 210b serves as a ground electrode for forming a plasma together with the plasma electrode 250.
  • the plasma electrode 250 forms a plasma from the gases SG, RG, and TG supplied to the gas injection space 212 according to the plasma power supplied from the plasma power supply 260.
  • the plasma is formed between the plasma electrode 250 and the ground electrode by an electric field applied between the plasma electrode 250 and the ground electrode according to the plasma power source.
  • the gases SG, RG, and TG supplied to the gas injection space 212 are activated by the plasma and locally sprayed onto the substrate W.
  • the gap (or gap) between the plasma electrode 250 and the ground electrode is set to the plasma electrode 250. It is set narrower than the interval between and the substrate W.
  • the present invention does not form the plasma between the substrate W and the plasma electrode 143a, but forms the plasma between the plasma electrode 250 and the ground electrode disposed side by side to be spaced apart from the substrate W. By doing so, it is possible to prevent the substrate W and / or the thin film from being damaged by the plasma.
  • the plasma power supply may be high frequency power or Radio Frequency (RF) power, for example, Low Frequency (LF) power, Middle Frequency (MF), High Frequency (HF) power, or Very High Frequency (VHF) power.
  • RF Radio Frequency
  • LF Low Frequency
  • MF Middle Frequency
  • HF High Frequency
  • VHF Very High Frequency
  • the LF power has a frequency in the range of 3 kHz to 300 kHz
  • the MF power has a frequency in the range of 300 kHz to 3 MHz
  • the HF power has a frequency in the range of 3 MHz to 30 MHz
  • the VHF power has a frequency in the range of 30 MHz to It may have a frequency in the 300MHz range.
  • An impedance matching circuit may be connected to the feed cable connecting the plasma electrode 250 and the plasma power supply 260.
  • the impedance matching circuit matches the load impedance and the source impedance of the plasma power supplied from the plasma power supply 260 to the plasma electrode 250.
  • the impedance matching circuit may be composed of at least two impedance elements (not shown) composed of at least one of a variable capacitor and a variable inductor.
  • the film quality of the thin film may be improved through the plasma of the surface treatment gas used in the above-described cycle.
  • the film quality of the thin film may be improved through the oxygen plasma.
  • the oxygen plasma when used, the thin film density can be increased, the oxygen quality can be improved by reducing oxygen vacancy, and the removal of hydrogen (Hydrogen) or hydroxyl (OH) is possible. It is possible to form an oxide-nitride thin film.
  • argon (Ar) gas or helium (He) gas is used as the surface treatment gas in the cycle described above, argon (Ar) gas or helium is performed at the same time because the surface treatment process and the purge process are performed simultaneously. Due to the purge function according to the plasma of the (He) gas, the density of the thin film may be increased, thereby reducing the etching rate of the thin film during patterning of the thin film.
  • each of the source gas injection module 142a, the first and second reactive gas injection modules 142b and 142c, and the surface treatment gas injection module 144a according to the second modified embodiment are all plasma electrodes.
  • the present invention is not limited thereto, and the source gas and / or the reactive gas may be sprayed onto the substrate without being activated according to the material of the thin film to be deposited on the substrate.
  • at least one of the source gas injection module 142a and the first and second reactive gas injection modules 142b and 142c may not include the plasma electrode 250 and may be configured as shown in FIG. 4 or 9. Can be.
  • the gas injection module according to the second modified embodiment described above may further include the gas injection pattern member 230 illustrated in FIG. 9.
  • the plasma electrode 250 is disposed in the gas injection space 212 so as not to contact the gas injection pattern member 230.
  • 11 and 12 are views for explaining a gas injection unit according to a modified embodiment of the substrate processing apparatus of the first and second embodiments of the present invention.
  • the gas injection unit 140 is one source gas injection module 142a and two reactive gas injection Although described as including a module 142b, 142c, and one surface treatment gas injection module 144a, the number of each of the source gas injection module, the reactive gas injection module, and the surface treatment gas injection module is the substrate (W). ) May be variously set according to process conditions or process characteristics of the thin film to be deposited.
  • the gas injection unit according to the first modified embodiment may include first and second source gas injection modules 142a and 142b, one reactive gas injection module 142c, and one gas injection unit. It is configured to include a surface treatment gas injection module 144a, in which the first reactive gas injection module 142b shown in FIG. 3 is replaced with a source gas injection module.
  • a surface treatment gas injection module 144a in which the first reactive gas injection module 142b shown in FIG. 3 is replaced with a source gas injection module.
  • Each of the first and second source gas injection modules 142a and 142b, one reactive gas injection module 142c, and one surface treatment gas injection module 144a is illustrated in FIGS. 4, 9, or 10. It may be formed to have a structure shown in. In the following, only different configurations will be described.
  • the first source gas injection module 142a is inserted into and installed in the first module installation unit 130a of the chamber lid 130 to inject the source gas SG into the first gas injection region 120a described above.
  • the second source gas injection module 142b is inserted into and installed in the second module installation unit 130b of the chamber lid 130 to inject the source gas SG into the aforementioned second gas injection region 120b.
  • the reactive gas injection module 142c is inserted into and installed in the third module installation unit 130c of the chamber lid 130 to inject the reactive gas RG into the aforementioned third gas injection region 120c.
  • the surface treatment gas injection module 144a is inserted into and installed in the fourth module installation unit 130d of the chamber lid 130 to inject the surface treatment gas TG into the fourth gas injection region 120d described above.
  • the gas injection unit according to the second modified embodiment may include one source gas injection module 142a, one reactive gas injection module 142b, and first and second surface treatments. It includes a gas injection module (144a, 144b), which is the second reaction gas injection module 142c shown in Figure 3 is replaced by a purge gas injection module.
  • a gas injection module 144a, 144b
  • each of the one source gas injection module 142a, one reactive gas injection module 142b, and the first and second surface treatment gas injection modules 144a and 144b is illustrated in FIGS. 4, 9, or 10. It may be formed to have the structure shown. In the following, only different configurations will be described.
  • the source gas injection module 142a is inserted into and installed in the first module installation unit 130a of the chamber lid 130 to inject the source gas SG into the aforementioned first gas injection region 120a.
  • the reactive gas injection module 142b is inserted into and installed in the second module installation unit 130b of the chamber lid 130 to inject the reactive gas RG into the aforementioned second gas injection region 120b.
  • the first surface treatment gas injection module 144a is inserted into and installed in the third module installation unit 130c of the chamber lid 130 to inject the surface treatment gas TG into the third gas injection region 120c described above. .
  • the second surface treatment gas injection module 144b is inserted into and installed in the fourth module installation unit 130d of the chamber lid 130 to inject the surface treatment gas TG into the fourth gas injection region 120d described above. .
  • the gas injection unit includes a source gas injection module, a reactive gas injection module, and a surface treatment gas injection module, wherein each of the source gas injection module, the reactive gas injection module, and the surface treatment gas injection module is included.
  • the number may be variously set according to the process conditions or process characteristics of the thin film deposited on the substrate (W).
  • the gas injector of the substrate processing apparatus described above with reference to FIGS. 2 to 12 may perform an ALD deposition process according to the movement of the substrate W according to the rotation of the substrate support 120 in the process space.
  • Each of the reaction gases is spatially separated and injected through a separate gas injection module.
  • the substrate W is moved through the local chemical vapor deposition (CVD) process by simultaneously spraying the source gas and the reactive gas through each gas injection module while moving the substrate W according to the rotation of the substrate support part 120 in the process space. It is also possible to deposit a thin film on (W). This local chemical vapor deposition (CVD) deposition process can improve the deposition rate and productivity of the thin film.
  • CVD local chemical vapor deposition
  • the gas injection unit 140 of the substrate processing apparatus of the third embodiment of the present invention includes a process gas injection unit 342 and a surface treatment gas injection unit 144. Since the process gas injector 342 is the same as the gas injector 140 of the above-described embodiments except that the structure is changed, only different configurations will be described below.
  • the process gas injector 342 may include the first to third process gas injector modules 342a, 342b, and 342c installed in the first to third module installation units 130a, 130b, and 130c of the chamber lid 130, respectively. It is configured to include.
  • Each of the first to third process gas injection modules 342a, 342b, and 342c may include a housing 410, a partition member 415, and first and second gas supply holes 420a, as illustrated in FIG. 14. 420b).
  • the housing 410 includes a ground plate 410a and a ground sidewall 410b.
  • the ground plate 410a is formed in a flat plate shape and coupled to an upper surface of the chamber lid 130.
  • the ground plate 410a is electrically connected to the chamber lead 130 to be electrically grounded through the chamber lead 130.
  • the ground sidewall 410b protrudes from the bottom edge of the ground plate 410a to have a predetermined height to provide first and second gas injection spaces 412a and 412b.
  • the ground sidewall 410b is inserted into the module installation parts 130a, 130b, and 130c provided in the chamber lead 130 described above.
  • the bottom surface of the ground sidewall 410b is not disposed on the same line as the bottom surface of the chamber lid 130 or protrudes from the bottom surface of the chamber lid 130.
  • the partition member 415 protrudes vertically from the center lower surface of the ground plate 410a to provide first and second gas injection spaces 412a and 412b that are spatially separated from the inside of the housing 410. Accordingly, each of the first and second gas injection spaces 412a and 412b is spatially separated by being surrounded by the ground sidewalls 410b and the partition member 415.
  • the partition member 415 is integrated into the housing 410 and electrically grounded to the chamber lead 130 through the ground plate 410a to serve as a ground electrode.
  • the first gas supply hole 420a is formed to vertically penetrate the ground plate 410a and communicate with the first gas injection space 412a.
  • the first gas supply hole 420a may be formed in plural to have a predetermined interval along the length direction of the ground plate 410a.
  • the first gas supply hole 420a is connected to an external source gas supply means through a source gas supply pipe (not shown) to supply the source gas SG supplied through the source gas supply pipe to the first gas injection space 412a.
  • a source gas supply pipe not shown
  • the source gas SG is diffused in the first gas injection space 412a and downwardly injected into each of the gas injection regions 120a, 120b, and 120c through the first gas injection space 412a.
  • the substrate W is moved in accordance with the rotation of the substrate support part 120 and passes through the lower portion of the process gas injection modules 342a, 342b, and 342c, that is, through the first to third gas injection regions 120a, 120b, and 120c. Sprayed.
  • the second gas supply hole 420b is formed to vertically penetrate the ground plate 410a and communicate with the second gas injection space 412b.
  • the second gas supply holes 420b may be formed in plural so as to have a predetermined interval along the longitudinal direction of the ground plate 410a.
  • the second gas supply hole 420b is connected to an external reaction gas supply means through a reaction gas supply pipe (not shown) to supply the reaction gas RG supplied through the reaction gas supply pipe to the second gas injection space 412b.
  • a reaction gas supply pipe not shown
  • the reaction gas RG is diffused in the second gas injection space 412b and injected downward into each of the gas injection regions 120a, 120b, and 120c through the second gas injection space 412b.
  • the substrate W is moved in accordance with the rotation of the substrate support part 120 and passes through the lower portion of the process gas injection modules 342a, 342b, and 342c, that is, through the first to third gas injection regions 120a, 120b, and 120c. Sprayed.
  • Each of the first to third process gas injection modules 342a, 342b, and 342c may have the source gas SG and the reactive gas RG through the spatially separated first and second gas injection spaces 412a and 412b. ) Is simultaneously injected downward into the first to third gas injection regions 120a, 120b, and 120c to simultaneously reach the substrate W and the source gas SG and the reaction gas RG. Accordingly, the substrate W, which is moved according to the rotation of the substrate support part 120, is lower than the process gas injection modules 342a, 342b, and 342c, that is, the first to third gas injection regions 120a, 120b, and 120c.
  • a predetermined thin film is deposited on the substrate W by a CVD deposition process by mutual reaction of the source gas SG and the reactive gas RG. do.
  • the substrate W on which the thin film is deposited by the source gas SG and the reactive gas RG injected together in each of the process gas injection modules 342a, 342b, and 342c is moved by the rotation of the substrate support 120. 4, 9, or 10, through the lower portion of the surface treatment gas injection module 144a described above, is exposed to activated or unactivated surface treatment gas TG, thereby The surface treatment gas TG injected into the thin film is infiltrated into the thin film deposited on the substrate W to remove impurities present on the surface and the inside of the thin film.
  • the surface treatment gas injection module 144a injects the surface treatment gas TG onto the substrate W every cycle or every plurality of cycles.
  • each of the above-described first to third process gas injection module 342a, 342b, 342c is a gas provided on the lower surface of the housing 410 to cover the lower portion of each of the first and second gas injection space (412a, 412b) It may be configured to further include a spray pattern member (not shown).
  • a spray pattern member not shown.
  • the gas injection pattern member is the same as the gas injection pattern member 230 illustrated in FIG. 9, a description thereof will be replaced with the above description.
  • a substrate processing method using the substrate processing apparatus of the substrate processing apparatus of the third embodiment of the present invention including the gas injection unit 140 will be described below.
  • the plurality of substrates W are loaded on the substrate support part 120 at regular intervals and seated thereon.
  • the substrate support 120 on which the plurality of substrates W are loaded and seated is rotated in a predetermined direction (for example, counterclockwise direction).
  • the source gas SG and the reactive gas RG are locally injected downward into the first to third gas injection regions 120a, 120b, and 120c through the process gas injection unit 342 described above,
  • the surface treatment gas TG is injected downward into the fourth gas injection region 120d through the surface treatment gas injection unit 144.
  • the source gas SG is formed through the first gas injection space 412a of each of the first to third process gas injection modules 342a, 342b, and 342c described above.
  • the reaction gas RG is injected downward into each of the first and third process gas injection modules 342a, 342b, and 342c, respectively, and is injected downward into each of the first and third process gas injection spaces 412b. It is injected downward into each of the third gas injection regions 120a, 120b, and 120c.
  • each of the plurality of substrates W passes through each of the first to third gas injection regions 120a, 120b, and 120c according to the rotation of the substrate supporter 120. It is exposed to the source gas SG and the reactive gas RG sprayed to each of the 120a, 120b, and 120c. As a result, each of the plurality of substrates W is exposed to the mutual reaction between the source gas SG and the reactive gas RG.
  • the predetermined thin film is deposited by the CVD deposition process.
  • the substrate W on which the predetermined thin film is deposited passes through the fourth gas injection region 120d according to the rotation of the substrate support part 120, and thus the surface treatment gas injected into the fourth gas injection region 120d ( TG). At this time, the surface treatment gas TG removes impurities, etc., present on the surface and the inside of the thin film by treating the thin film deposited on the substrate W.
  • the substrate processing method using the substrate processing apparatus of the third embodiment of the present invention after the thin film is deposited on the substrate W through the CVD thin film deposition process in the process space, the surface treatment process is performed with a short time difference.
  • the film quality of the film can be improved and the film quality of the thin film can be easily controlled.
  • the substrate treating apparatus and the substrate treating method of the third embodiment of the present invention sequentially perform the CVD deposition process and the surface treatment process in every cycle, or perform the CVD deposition process every cycle, but the surface treatment process for each of a plurality of cycles. Therefore, the film quality of the CVD thin film can be improved rather than the surface treatment after forming the bulk thin film.
  • the gas injection unit 140 includes three process gas injection modules 342a, 342b, and 342c and one surface treatment gas injection module 144a, but is not limited thereto.
  • the gas injection unit 140 may include two process gas injection modules disposed adjacent to each other and two surface treatment gas injection modules 144a disposed adjacent to each other.
  • the gas injection unit 140 of the substrate processing apparatus of the third embodiment of the present invention is a purge gas injection for injecting a purge gas between the first to fourth gas injection region (120a, 120b, 120c, 120d)
  • the module may further include a module (not shown). Since the purge gas injection module is the same as the purge gas injection module 146 illustrated in FIGS. 6 and 7, a description thereof will be replaced with the above description.
  • FIG. 15 is a cross-sectional view for describing a process gas spray module according to a modified first embodiment in the substrate processing apparatus according to the third embodiment of the present invention, which is a second gas spray space of the process gas spray module shown in FIG. 14.
  • the plasma electrode 450 is further formed at 412b. In the following, only different configurations will be described.
  • the reactive gas RG is sprayed onto the substrate without being activated.
  • the process gas injection module according to the first embodiment of the modification of the substrate processing apparatus according to the third embodiment of the present invention activates the reaction gas RG and sprays it onto the substrate.
  • Each of the first to third process gas injection modules 342a, 342b, and 342c according to the first modified embodiment may further include a plasma electrode 450 inserted into the second gas injection space 412b.
  • an insulating member insertion hole 422 communicating with the second gas injection space 412b is formed in the ground plate 410a of the housing 410, and an insulating member 440 is formed in the insulating member insertion hole 422. ) Is inserted.
  • an electrode insertion hole 442 communicating with the second gas injection space 412b is formed in the insulating member 440, and the plasma electrode 450 is inserted into the electrode insertion hole 442.
  • the plasma electrode 450 is inserted into the second gas injection space 412b and disposed in parallel with the ground sidewall 410b.
  • the lower surface of the plasma electrode 450 may be positioned on the same line as the lower surface of the ground sidewall 410b or protrude to have a predetermined height from the lower surface of the ground sidewall 410b and the ground partition wall 415.
  • Each of the ground sidewall 410b and the ground partition wall 415 serves as a ground electrode for forming a plasma together with the plasma electrode 450.
  • the plasma electrode 450 forms a plasma from the reaction gas RG supplied to the second gas injection space 412b according to the above-described plasma power supplied from the plasma power supply 460.
  • the plasma is formed between the plasma electrode 450 and the ground electrode by an electric field applied between the plasma electrode 450 and the ground electrode according to the plasma power source. Accordingly, the reaction gas RG supplied to the second gas injection space 412b is activated by the plasma and locally sprayed onto the substrate W.
  • FIG. 16 is a cross-sectional view for describing a process gas spray module according to a second embodiment in the substrate processing apparatus according to the third embodiment of the present invention, which is a first gas spray space of the process gas spray module shown in FIG. 15.
  • the gas injection pattern member 430 is further formed at 412a. In the following, only different configurations will be described.
  • the first and second gas injection spaces 412a and 412b of each of the above-described first to third process gas injection modules 342a, 342b, and 342c are spatially separated by the ground partition wall 415, but the second The activated reaction gas RG injected from the gas injection space 412b may diffuse, counter current, and penetrate into the adjacent first gas separation space 412a.
  • the source gas SG and the activated reactive gas RG react with each other in the first gas injection space 412a, and thus an abnormal thin film is formed on the inner wall of the first gas injection space 412a.
  • An abnormal thin film of deposited or powder component may be formed to produce particles falling on the substrate.
  • the gas injection pattern member 430 is installed at the lower portion of the housing 410 to cover the lower portion of the first gas injection space 412a and is supplied to the first gas injection space 412a to be injected downward.
  • the activated reaction gas RG injected from the adjacent second gas injection space 412b with the partition member 415 interposed therebetween by increasing the injection pressure of the diffusion, backflow, and To prevent penetration. Since the gas injection pattern member 430 has the same structure as that of the gas injection pattern member 230 illustrated in FIG. 9, redundant description thereof will be omitted.
  • the above-described gas injection pattern member 430 is additionally installed in the lower portion of the housing 410 to cover the lower portion of the second gas injection space 412b to be activated in the second gas injection space 412b (RG) may be injected downward at a predetermined pressure.
  • the substrate processing apparatus including the process gas injection module according to the second modified embodiment of the present invention is source gas supplied to the first gas injection space 412a through the gas injection pattern member 430.
  • the abnormal thin film may be prevented from being deposited on the inner wall of the first gas injection space 412a by the activated reaction gas RG injected from the second gas injection space 412b. have.
  • FIG. 17 is a cross-sectional view for describing a process gas injection module in a third embodiment of the substrate processing apparatus according to the third embodiment of the present invention, which is a first gas injection space of the process gas injection module shown in FIG. 16.
  • the plasma electrode 450 is further formed at 412a. In the following, only different configurations will be described.
  • the source gas SG is injected onto the substrate without being activated.
  • the process gas injection module according to the third modification of the substrate processing apparatus according to the third embodiment of the present invention also activates the source gas SG and sprays the same on the substrate.
  • Each of the first to third process gas injection modules 342a, 342b, and 342c according to the third modified embodiment may further include a plasma electrode 450 ′ inserted into the first gas injection space 412a.
  • a plasma electrode 450 ′ inserted into the first gas injection space 412a.
  • an insulating member insertion hole 422 'communicating with the first gas injection space 412a is formed in the ground plate 410a of the housing 410, and an insulating member is formed in the insulating member insertion hole 422'.
  • an electrode insertion hole 442 ' is formed in the insulating member 440' and communicates with the first gas injection space 412a.
  • the plasma electrode 450 ' formed in the electrode insertion hole 442'. Will be inserted.
  • the plasma electrode 450 ′ is inserted into the first gas injection space 412a and disposed in parallel with the ground sidewall 410b.
  • the lower surface of the plasma electrode 450 ' is inserted into the electrode insertion hole 442' so as to be spaced apart from the upper surface of the gas injection pattern member 430 and disposed in the first gas injection space 412a.
  • the plasma electrode 450 ′ forms a plasma from the source gas SG supplied to the first gas injection space 412a according to the above-described plasma power supplied from the plasma power supply 460 ′.
  • the plasma is formed between the plasma electrode 450 'and the ground electrode by an electric field applied between the plasma electrode 450' and the ground electrode according to the plasma power source. Accordingly, the source gas SG supplied to the first gas injection space 412a is activated by the plasma and locally sprayed onto the substrate W.
  • Each of the plasma electrodes 450 disposed in the first gas injection space 412a and the plasma electrodes 450 ′ disposed in the second gas injection space 412b includes one plasma power supply or different plasma power supplies.
  • the same or different plasma power may be supplied from 460 and 460 '.
  • the gas injection unit is shown and described as including four gas injection modules for injecting the source gas, the reaction gas, and the surface treatment gas Though.
  • the gas injector is not limited thereto, and the gas injector includes three or more gas injector modules for injecting each of the source gas, the reactant gas, and the surface treatment gas, or two or more inject the source gas and the reactant gas together. It may comprise a process gas injection module and one or more surface treatment gas injection module for injecting the surface treatment gas.
  • FIG. 18 is a view conceptually showing an arrangement structure of a gas injection unit in the substrate processing apparatus according to the fourth embodiment of the present invention, which is configured by changing the structure of the purge gas injection module illustrated in FIGS. 6 and 7. In the following, only different configurations will be described.
  • the purge gas is not activated in the purge gas injection region 120e defined between the first to fourth gas injection regions 120a, 120b, 120c, and 120d. Sprayed in a non-conforming state.
  • the purge gas may be activated using plasma to spray the purge gas into the purge gas injection region 120e (see FIG. 6).
  • the purge gas injection module 146 of the substrate processing apparatus of the fourth embodiment of the present invention the housing 210 and the housing 210 which serves as a ground electrode as in the gas injection module shown in FIG. Since it is formed to include a plasma electrode 250 inserted into the interior of the description thereof will be omitted.
  • the substrate processing apparatus and the substrate processing method of the fourth embodiment of the present invention form a plasma in the purge gas injection module 146 and inject the purge gas activated by the plasma onto the substrate to activate the purge gas. Therefore, the purge process and the surface treatment process may be performed at the same time, thereby increasing the density of the thin film deposited on the substrate.
  • the substrate processing apparatus and the substrate processing method of the fourth embodiment of the present invention increase the density of the thin film deposited on the substrate to etch the thin film during patterning of the thin film. It is effective to lower the rate.
  • the substrate processing apparatus of the fourth embodiment of the present invention can perform the purge process and the surface treatment process simultaneously by injecting the activated purge gas through the purge gas injection module 146, the purge gas injection module 146 Activated purge gas, which is injected from X), is injected onto the substrate as an activated surface treatment gas. Accordingly, the above-described surface treatment gas injection module 144a may be omitted because the purge gas injection module 146 is used as a surface treatment gas injection module to replace the function of the surface treatment gas injection module 144a described above. have.
  • 19 is a graph showing a comparison of specific resistance according to the thickness of a thin film formed by the substrate processing process of the present invention, the conventional CVD process and the ALD process, respectively.
  • the specific resistance of the thin film deposited on the substrate by the substrate processing apparatus and substrate processing method of the present invention is lower than the thin film formed by the general CVD process or ALD process at the same thickness.
  • 20 is a graph showing comparison of surface roughness according to the thickness of a thin film formed by each of the present invention and a conventional substrate processing process.
  • the surface roughness of the thin film deposited on the substrate by the substrate processing apparatus and substrate processing method of the present invention is relatively smaller than the thin film formed by the conventional substrate processing process.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil de traitement d'un substrat et un procédé de traitement d'un substrat, dans lequel un processus de dépôt de couche mince et un processus de traitement de surface de couche mince peuvent être effectués de manière séquentielle ou répétée dans un espace de traitement. L'appareil de traitement d'un substrat selon la présente invention comprend : une chambre de traitement pour fournir un espace de traitement ; une partie de support de substrat disposée à l'intérieur de la chambre de traitement pour supporter au moins un substrat et déplacer le substrat supporté dans une direction prédéterminée ; un couvercle de chambre pour recouvrir la partie supérieure de la chambre de traitement de façon à être opposé à la partie de support de substrat ; et une partie d'injection de gaz disposée sur le couvercle de chambre de façon à être opposé à la partie de support de substrat et séparant spatialement un gaz de traitement pour déposer une couche mince sur le substrat et un gaz de traitement de surface pour le traitement de surface de la couche mince de façon à injecter de manière locale le gaz sur la partie de support de substrat.
PCT/KR2013/005647 2012-06-29 2013-06-26 Appareil de traitement de substrat et procédé de traitement de substrat WO2014003434A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/411,477 US10233542B2 (en) 2012-06-29 2013-06-26 Apparatus for treating substrate and method for treating substrate
CN201380034858.3A CN104395987B (zh) 2012-06-29 2013-06-26 基板加工装置及方法
JP2015520013A JP6265983B2 (ja) 2012-06-29 2013-06-26 基板処理装置及び基板処理方法
US16/264,670 US20190161861A1 (en) 2012-06-29 2019-01-31 Apparatus for treating substrate and method for treating substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20120070881 2012-06-29
KR10-2012-0070881 2012-06-29
KR1020130071129A KR102070400B1 (ko) 2012-06-29 2013-06-20 기판 처리 장치 및 기판 처리 방법
KR10-2013-0071129 2013-06-20

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US16/264,670 Division US20190161861A1 (en) 2012-06-29 2019-01-31 Apparatus for treating substrate and method for treating substrate

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