WO2020101375A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2020101375A1
WO2020101375A1 PCT/KR2019/015498 KR2019015498W WO2020101375A1 WO 2020101375 A1 WO2020101375 A1 WO 2020101375A1 KR 2019015498 W KR2019015498 W KR 2019015498W WO 2020101375 A1 WO2020101375 A1 WO 2020101375A1
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WIPO (PCT)
Prior art keywords
substrate
region
plasma
zone
gas
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PCT/KR2019/015498
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English (en)
Korean (ko)
Inventor
황철주
Original Assignee
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020190079103A external-priority patent/KR20200056273A/ko
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to JP2021525621A priority Critical patent/JP2022507173A/ja
Priority to CN201980068515.6A priority patent/CN112912997A/zh
Priority to US17/284,438 priority patent/US11837445B2/en
Publication of WO2020101375A1 publication Critical patent/WO2020101375A1/fr
Priority to US18/493,618 priority patent/US20240055233A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a substrate processing apparatus that performs a processing process such as a deposition process, an etching process, and the like on a substrate.
  • a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on the substrate surface, and for this, a thin film of a specific material is deposited on the substrate.
  • a semiconductor manufacturing process such as a thin film deposition process, a photo process for selectively exposing a thin film using a photosensitive material, or an etching process for selectively removing a thin film of an exposed part to form a pattern is performed.
  • the process of forming a thin film on a substrate or removing a thin film is performed by supplying a gas for forming a specific material on a substrate or a gas for selectively removing the material or a corresponding material.
  • the process of forming a thin film may be performed by supplying a source gas and a reactant gas for forming a specific material, in which case the source gas and the reactant gas may be supplied simultaneously on the substrate or sequentially with a time difference. .
  • Atomic Layer Deposition does not simultaneously supply source gas and reactant gas to form a thin film formed by the reaction of a source gas and a reactant gas on a substrate. It is a method of inducing only the reaction on the surface of the substrate by supplying the source gas and reactant gas at different times. First, the source gas is supplied onto the substrate so that the source gas is adsorbed on the surface of the substrate, and then the remaining source gas can be removed using a purge gas.
  • a reactant gas is supplied onto the substrate to react with the source gas adsorbed on the substrate surface, and the remaining reactant gas can be removed using a purge gas.
  • a purge gas In the step of supplying the reactant gas, an atomic layer or a single layer thin film is formed on the surface of the substrate through the reaction of the source gas and the reactant gas. This procedure can be repeated to a desired thickness to form a thin film having a predetermined thickness on the substrate surface.
  • the atomic layer deposition method has a disadvantage in that the reaction of the source gas and the reactant gas occurs only on the surface of the substrate, and thus the rate at which the thin film is deposited is lower than that of a general chemical vapor deposition method (CVD, Chemical Vapor Deposition).
  • CVD chemical vapor deposition method
  • the process in which the source gas is supplied to the same process space, the supplied source gas is purged, the reactant gas is supplied, and the process of repeating the step of purging the reactant gas at a fast time has a disadvantage that it takes a long time, If the process is repeated quickly, there is a disadvantage that the supplied source gas or reactant gas cannot be completely discharged (purged) out of the chamber from the process space, so that it does not become an atomic layer thin film, but two gases meet to form a chemical vapor deposition CVD thin film.
  • a method for rapidly supplying source gas or reactant gas and a structure in which the two gases are not mixed in the process and a pure atomic layer (Pure ALD) film are required during the atomic layer deposition process (ALD) of source gas or reactant gas. Is becoming.
  • the present invention is to solve the above-mentioned problems, and it is a technical problem to provide a process chamber in which a source gas and a reactant gas are not mixed in space.
  • ALD atomic layer deposition
  • An object of the present invention is to provide an apparatus that simultaneously supplies plasma to a part of the purge gas supply unit that supplies the purge gas.
  • a substrate processing apparatus for achieving the above technical problem is a chamber; A substrate support rotatably installed in at least one substrate in a process space inside the chamber; A first gas injection unit for injecting source gas into the first region of the process space; A second gas injection unit for injecting a reactant gas reacting with the source gas to the second region in the second region of the process space; And it may include a third gas injection unit for injecting a purge gas dividing the first region and the second region to the third region.
  • the substrate processing method comprises: performing a adsorption process by injecting a source gas into the first area when the first substrate is located in the first area of the process space inside the chamber; When the adsorption process is completed, rotating the substrate support on which the first substrate is supported so that the first substrate is located in a second region of the process space inside the chamber; If the first substrate is located in the second region, performing a deposition process by spraying reactant gas to the second region; And when the deposition process is completed, rotating the substrate support so that the first substrate is positioned in the first region.
  • the step of performing the deposition process may perform the deposition process by spraying an activated reactant gas using plasma in the second region.
  • the substrate processing apparatus is a pure atomic layer (Pure ALD) through a purge gas injection space that can completely divide the process space in the chamber into a source gas injection space and a reactant gas injection space.
  • a thin film can be formed.
  • the substrate processing apparatus can remove impurities in the thin film generated on the substrate through the plasma gas injected from the third gas injection unit, the purge gas injection space, and is injected from the third gas injection unit
  • the process gas remaining between the patterns of the substrate, that is, the source gas or reactant gas, can be completely removed through the purge gas.
  • FIG. 1 is a plan view schematically showing a state of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a view for explaining the upper lid (Lid) of the chamber in the substrate processing apparatus according to an embodiment of the present invention.
  • 3A and 3B are schematic side cross-sectional views based on the line A-A of FIG. 1 for describing an upper lid of a chamber in a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 4 is a schematic cross-sectional side view of the substrate processing apparatus according to an embodiment of the present invention based on the line A'-A 'of FIG. 2 for explaining the upper lid of the chamber.
  • FIG. 5 is another schematic cross-sectional side view of the substrate processing apparatus according to the exemplary embodiment of the present invention illustrated with reference to the line A'-A 'of FIG. 2 for explaining the upper lid of the chamber.
  • FIG. 6 is a schematic bottom view of the upper lid of the chamber in the substrate processing apparatus according to the embodiment of the present invention.
  • FIG. 7 is a schematic plan cross-sectional view of the third gas injection unit in the substrate processing apparatus according to the embodiment of the present invention.
  • FIG. 8 is a table summarizing embodiments according to a region in which plasma gas is injected.
  • 9 to 14B are schematic plan views of a substrate support in a substrate processing apparatus according to an embodiment of the present invention.
  • 15 is a schematic flowchart of a substrate processing method according to the present invention.
  • 1 may be a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
  • 2 may be a plan view of the upper surface of the chamber and the upper lid viewed from the top.
  • the substrate processing apparatus may have a process space 1 inside the chamber.
  • An upper lead may be provided above the process space 1 of the chamber, and a substrate support 600 may be provided below the process space 1 of the chamber.
  • One or more substrates may be disposed on the substrate support part 600 on the substrate support part 600.
  • the process space 1 in the chamber may be divided into a first region 10, a second region 20, and a third region 30.
  • a first gas injection unit 100 for injecting source gas into the first region 10 may be disposed in the first region 10.
  • a second gas injection unit 200 for injecting reactant gas reacting with the source gas into the second region 20 may be disposed in the second region 20.
  • the first gas injection unit 100 and the second gas injection unit 200 may be coupled to the upper lead.
  • the third region 30 may be a third region 30 that divides the process space 1 in the chamber into two, a first region 10 and a second region 20.
  • the third region 30 is a first region in the process space 1 in the chamber so that the source gas which is the process gas in the first region 10 and the reactant gas which is the process gas in the second region 20 are not mixed. It can be divided into (10) and the second area (20).
  • a third gas injection unit 300 for injecting purge gas may be disposed in the third region 30.
  • the third gas injection unit 300 may be coupled to the upper lead.
  • a view of the chamber of A-A with reference to FIG. 1 may be 3A and 3B.
  • the second gas injection unit 200 for spraying the reactant gas may be embodied in an electrode structure type composed of the first electrode 210 and the second electrode 220 as shown in FIG. 3A.
  • the second gas injection unit 200 for spraying the reactant gas may be implemented as a shower head type. In this case, the second gas injection unit 200 does not include the first electrode 210 and the second electrode 220.
  • the second gas injection unit 200 for spraying the reactant gas may be implemented as a shower head type as the first gas injection unit 100 shown in FIG. 3A.
  • a ground may be connected to the second electrode 220.
  • RF may be applied to the second electrode 220.
  • plasma may be generated between the first electrode 210 and the second electrode 220.
  • the first electrode 210 and the second electrode 220 having a potential difference may constitute a plasma injection unit.
  • a plurality of protruding electrodes 230 may be formed on the first electrode 210 in the direction of the substrate support 600. Accordingly, plasma may be generated in the second region 20.
  • the second gas injection unit 200 may be connected to a remote plasma device (not shown) outside the chamber. Accordingly, the second gas injection unit 200 may spray ionized gas or active species into the second region 20.
  • the first electrode 210 and the protruding electrode 230 may be connected to each other with the same potential. Accordingly, plasma may be generated due to a potential difference between the first electrode 210 and the protruding electrode 230 and the second electrode 220. In this case, plasma may be generated between the first electrode 210 and the second electrode 220. Plasma may be generated between the protruding electrode 230 and the second electrode 220. Plasma may be generated between both the first electrode 210 and the second electrode 220 and between the protruding electrode 230 and the second electrode 220.
  • the gas injection hole (not shown) of the second gas injection unit 200 may have a gas line formed in the longitudinal direction of the protruding electrode 230. In this case, reactant gas or plasma generating gas may be injected through the gas injection hole formed in the protruding electrode 230.
  • a gas injection hole may be formed in the process space direction on the first electrode 210. In this case, reactant gas or plasma generating gas may be injected through the gas injection hole formed in the first electrode 210.
  • the second gas injection unit 200 may include a plasma injection unit (not shown) for spraying ionized gas or active species.
  • the plasma injection unit may be connected to a remote plasma device (not shown) so as to spray ionized gas or active species.
  • the first gas injection unit 100 and the second gas injection unit 200 may be implemented with different types of injection structures.
  • the first gas injection unit 100 may be implemented as a shower head type
  • the second gas injection unit 200 may be implemented as an electrode structure type.
  • a process of adsorbing the source gas to the substrate is performed, and in the second region 20, the source gas adsorbed to the substrate and the reactant gas react to form an atomic layer deposition method on the substrate (ALD ) May be used to deposit a thin film.
  • ALD atomic layer deposition method on the substrate
  • the first gas injection unit 100 may be coupled to the upper lead so as to be disposed above the first region 10.
  • the first gas injection unit 100 may supply the source gas to the first region 10.
  • the first gas injection unit 100 may be implemented as a shower head type.
  • a lower portion of the first gas injection portion 100 that is, a first gas injection hole 110 capable of injecting source gas into the first region 10 may be formed in the lower direction of the process space 1.
  • the first gas injection hole 110 is formed of a plurality of holes (Hole) to inject the source gas in the direction of the substrate support 600.
  • the first gas injection unit 100 may be implemented as an electrode structure type.
  • the first gas injection unit 100 may include a first electrode 120, a protruding electrode 130, and a second electrode 140.
  • both the first gas injection unit 100 and the second gas injection unit 200 may be embodied in the same type of injection structure.
  • both the first gas injection unit 100 and the second gas injection unit 200 may be implemented in an electrode structure type.
  • both the first gas injection unit 100 and the second gas injection unit 200 may be implemented as a shower head type.
  • the third region 30 may separate and divide the first region 10 and the second region 20. If the center portion of the upper lead is cut with A'-A 'with reference to FIG. 2, a side view cut in FIG. 4 can be seen.
  • the third gas injection unit 300 sprays purge gas into the third region 30.
  • the third gas injection unit 300 may be divided into a first zone 302, a second zone 304, and a third zone 306 to inject purge gas into the third zone 30.
  • the first purge gas injection unit 310 and the first plasma injection unit 302a may be disposed in the first zone 302.
  • An RF power source 700 for plasma generation may be connected to the first plasma injection unit 302a.
  • the RF power source may be a high frequency power source.
  • the first plasma injection unit 302a may be located inside the first purge gas injection unit 310. That is, the first purge gas injection unit 310 may be located on both sides of the first plasma injection unit 302a.
  • the first purge gas injection unit 310 of the first zone 302 is a source gas of the first zone 10 and a reactant gas of the second zone 20 through the purge gas injection to the first zone 302 Can purge to separate from each other.
  • the first plasma injection unit 302a of the first zone 302 is a process in which the substrate passes through the first zone 302 by rotation of the substrate support 600 through plasma gas injection to the first zone 302 Plasma treatment can be performed at. Accordingly, the first plasma injection unit 302a of the first zone 302 may remove impurities in the film of the substrate thin film to improve the film quality of the thin film. In addition, when the substrate is rotated after the deposition process, plasma treatment may be simultaneously performed while removing the process gas remaining on the substrate in the third region 30, thereby shortening the process time as much as possible. . When viewed from the lower surface of the third gas injection unit 300, the first purge gas injection unit 310, the first plasma injection unit 302a, and the first purge gas injection unit 310 may be continuously configured. have.
  • the third gas injection unit 300 may generate a second zone 304 in a space opposite the first zone 302.
  • a window 304a may be formed inside the second zone 304.
  • the window 304a may be a window made of a transparent material to sense and measure the temperature and position and rotation of the substrate from the outside.
  • the substrate sensing device 800 may detect and measure the distance from the substrate to the lower surface 308 of the third gas injection unit.
  • the substrate sensing device 800 may include a vision device and a temperature detector for measuring the temperature of the substrate.
  • a temperature detection unit for measuring the temperature of the substrate may be disposed in the second zone 304.
  • the temperature detection unit may be installed in the third gas injection unit 300.
  • a second plasma injection unit may be disposed in the second zone 304.
  • a window 304a may be disposed in the first zone 302.
  • the first plasma injection unit 302a and the second plasma injection unit may be additionally installed in each of the first zone 302 and the second zone 304.
  • a window 304a may be installed in each of the first zone 302 and the second zone 304.
  • the third gas injection unit 300 may include a center purge injection unit disposed in the third zone 306.
  • the center purge injection unit may be installed on the upper lead of the central region of the substrate support.
  • a purge gas injection hole for injecting a purge gas may be formed in the center purge injection unit. Accordingly, the center purge injection unit may inject the purge gas in the direction of the substrate support unit 600. In this case, the center purge injection unit may inject purge gas into the third zone 306.
  • the center purge injection unit may spray the purge gas to the center of the process space of the chamber, so that the gases in the first region 10 and the second region 20 are separated from the center of the chamber.
  • FIG. 5 may be a side view of A′-A ′ of FIG. 2 taken through a window 304a and a portion without the first plasma injection unit 302a.
  • the first purge gas injection unit 310 may be connected to one space. Accordingly, the process space may be separated into the first region 10 and the second region 20 through one first purge gas injection unit 310.
  • the third gas injection unit 300 is divided into a first zone 302, a second zone 304, and a third zone 306 are separated, thereby dividing the process space into the first zone 10 and the second zone. It can be separated by (20).
  • a temperature detection unit 810 for measuring the temperature of the substrate may be disposed in an area other than where the plasma gas is injected in the third area 30.
  • the temperature detector 810 may include a substrate sensing device 800 and a window 304a.
  • the first plasma injection unit 302a may be connected to a remote plasma device (not shown) to spray ionized gas or active species.
  • the source gas supplied from the first gas injection unit 100 to the first region 10 may include titanium group elements (Ti, Zr, Hf, etc.), silicon (Si), or aluminum (Al).
  • the source gas SG made of titanium (Ti) may be titanium tetrachloride (TiCl4) gas or the like.
  • the source gas (SG) containing a silicon (Si) material is a silane (Silane; SiH4) gas, Disilane (Si2H6) gas, Trisilane (Si3H8) gas, TEOS (Tetraethylorthosilicate) gas, DCS (DCS) Dichlorosilane (Dichlorosilane) gas, HCD (Hexachlorosilane) gas, TriDMAS (Tri-dimethylaminosilane) gas, or TSA (Trisilylamine) gas.
  • the reactant gas supplied from the second gas injection unit 200 to the second region 20 is hydrogen (H2) gas, nitrogen (N2) gas, oxygen (O2) gas, nitrous oxide (N2O) gas, ammonia ( NH3) gas, vapor (H2O) gas, or ozone (O3) gas.
  • the reactant gas may be mixed with a purge gas made of nitrogen (N2) gas, argon (Ar) gas, xenon (Ze) gas, or helium (He) gas.
  • the gas for generating plasma is hydrogen (H2) gas, nitrogen (N2) gas, hydrogen (H2) gas and nitrogen (N2) gas mixed gas, oxygen (O2) gas, nitrous oxide (N2O) gas, argon ( Ar) gas, helium (He) gas, or ammonia gas (NH3).
  • the purge gas injected from the third gas injection unit 300 and supplied to the third region 30 includes nitrogen (N2) gas, argon (Ar) gas, xenon (Ze) gas, or helium (He) gas. Can be supplied. These can be inert gases.
  • the third gas injection unit 300 is a first purge gas injection unit 310, a second purge gas injection unit 320, and A center purge injection unit 330 may be included.
  • the first purge gas injection unit 310 may inject purge gas into the first region 302 of the third region 30.
  • a first plasma injection unit 302a may be installed in the first purge gas injection unit 310.
  • the first plasma injection unit 302a may inject plasma gas into the first zone 302. Accordingly, after the source gas is adsorbed to the substrate in the first region 10, the substrate passes through the first region 302 in the first region 10 as the substrate support portion 600 rotates, and thus the second region 20 In the process of moving to), the first plasma injection unit 302a may perform the first plasma processing on the substrate passing through the first zone 302. That is, the first plasma injection unit 302a may perform pre-Treatment processing using plasma. Accordingly, the first plasma injection unit 302a may contribute to improving the quality of the thin film deposited on the substrate by removing impurities in the source gas adsorbed on the substrate.
  • the first plasma injection unit 302a may be disposed inside the first purge gas injection unit 310. Accordingly, when the substrate moves from the first region 10 to the second region 20, purge gas injection, plasma gas injection, and purge gas injection may be performed on the substrate passing through the first zone 302. In this case, the purge gas injection may be performed by the first purge gas injection unit 310, and the plasma gas injection may be performed by the first plasma injection unit 302a.
  • the first plasma injection unit 302a may be implemented as a shower head type or an electrode structure type.
  • the second purge gas injection unit 320 may inject purge gas into the second region 304 of the third region 30.
  • a second plasma injection unit 304b may be installed in the second purge gas injection unit 320.
  • the second plasma injection unit 304b may inject plasma gas into the second zone 304. Accordingly, after the thin film is deposited by atomic layer deposition (ALD) by reacting the source gas adsorbed to the substrate and the reactant gas in the second region 20, the substrate is moved into the second region ( In step 20), in the process of passing through the second zone 304 and moving to the first region 10, the second plasma injection unit 304b performs the second plasma treatment on the substrate passing through the second zone 304. Can be implemented. That is, the second plasma injection unit 304b may perform post-treatment processing using plasma.
  • ALD atomic layer deposition
  • the second plasma ejecting portion 304b can remove the impurities in the thin film deposited on the substrate, thereby densifying the thin film deposited on the substrate. Therefore, the second plasma injection unit 304b may further improve the quality of the thin film deposited on the substrate.
  • the second plasma injection unit 304b may be disposed inside the second purge gas injection unit 320. Accordingly, when the substrate moves from the second region 20 to the first region 10, purge gas injection, plasma gas injection, and purge gas injection may be performed on the substrate passing through the second zone 304. In this case, the purge gas injection may be performed by the second purge gas injection unit 320, and the plasma gas injection may be performed by the second plasma injection unit 304b.
  • the second plasma injection unit 304b may be implemented as a shower head type or an electrode structure type.
  • the center purge injection unit 330 may inject purge gas into the third zone 306 of the third region 30. Accordingly, the center purge injection unit 330 may block mixing of the source gas injected into the first region 10 and the reactant gas injected into the second region 20 through the third zone 306. have. Meanwhile, the first purge gas injection unit 310 blocks the source gas injected in the first region 10 and the reactant gas injected in the second region 20 from being mixed with each other through the first zone 302. Can be. The second purge gas injection unit 320 may block mixing of the source gas injected into the first region 10 and the reactant gas injected into the second region 20 through the second zone 304. .
  • the first region 10, the first region 302, the second region 20, and the second region 304 are transferred to the substrate through rotation of the substrate support 600.
  • the process can be performed on the substrate while moving back to the first region 10.
  • the substrate support part 600 may be rotated by a rotation part (not shown). Looking at the process of rotating the rotating portion substrate support portion 600, as follows.
  • the rotating part may stop the substrate support part 600. Accordingly, an adsorption process may be performed in the first region 10 to adsorb the source gas to the substrate while the substrate is stopped.
  • the first gas injection unit 100 may inject source gas into the first region 10.
  • the rotating unit may rotate the substrate support 600 so that the substrate moves from the first region 10 to the second region 20 through the first region 302.
  • the rotating portion can be rotated continuously without stopping the substrate supporting portion 600 when the substrate passes through the first zone 302.
  • the first plasma treatment may be performed on the substrate using the plasma gas injected by the first plasma injection unit 302a.
  • the rotating part may stop the substrate support part 600. Accordingly, in the second region 20, a deposition process in which a thin film is deposited by reacting the source gas adsorbed on the substrate and the reactant gas injected by the second gas injection unit 200 while the substrate is stopped may be performed. .
  • the second gas injection unit 200 may activate the reactant gas by using plasma and spray it on the second region 20.
  • the substrate processing apparatus according to the present invention can be suitably implemented for a low temperature process.
  • the substrate processing apparatus according to the present invention can be suitably implemented in a semiconductor low temperature nitride process.
  • the first plasma injection unit 302a may not spray plasma gas.
  • the second gas injection unit 200 may spray the second region 20 in a state in which the reactant gas is not activated.
  • the substrate processing apparatus according to the present invention can be suitably implemented for a high temperature process.
  • the substrate processing apparatus according to the present invention can be suitably implemented for a semiconductor High Temperature Nitride process.
  • the first plasma injection unit 302a may spray plasma gas.
  • the rotating unit may rotate the substrate support 600 so that the substrate moves from the second region 20 to the first region 10 through the second region 304.
  • the rotating portion can be rotated continuously without stopping the substrate supporting portion 600.
  • a second plasma treatment may be performed on the substrate using the plasma gas injected by the second plasma injection unit 304b.
  • the second plasma injection unit 304b may not spray plasma gas when the substrate passes through the second zone 304.
  • the rotating part may stop the substrate support part 600 when the substrate is located in the first area 10 and when the substrate is located in the second area 20.
  • the rotating unit may continuously rotate the substrate supporting unit 600 without stopping.
  • the rotating unit stops the substrate supporter 600 only when the substrate is located in the first region 10, and the substrate stops the first zone 302, the second zone 20, and the second zone 304.
  • the substrate support 600 may be continuously rotated without stopping.
  • the third gas injection unit 300 may be implemented to inject and purge the plasma gas into the first region 302 of the third region 30. That is, the plasma gas injected into the first zone 302 may function as a purge gas.
  • the substrate support part 600 may rotate to move the substrate from the first region 10 to the second region 20 through the first region 302. Accordingly, the plasma gas injected into the first zone 302 can not only perform purge in the first zone 302, but also can perform pre-treat treatment on the substrate passing through the first zone 302. have. In this case, only the first plasma injection unit 302a may be disposed in the first zone 302 without the first purge gas injection unit 310.
  • the third gas injection unit 300 may be implemented to purge the second zone 304 of the third region 30 by injecting plasma gas. That is, the plasma gas injected into the second zone 304 may function as a purge gas.
  • the substrate support part 600 may rotate to move the substrate from the second region 20 to the first region 10 through the second region 304. Accordingly, the plasma gas injected into the second zone 304 can not only purge in the second zone 304, but also post-treat treatment on the substrate passing through the second zone 304. have. In this case, only the second plasma injection unit 304b may be disposed in the second zone 304 without the second purge gas injection unit 320.
  • the substrate processing apparatus may include various embodiments according to a region in which plasma gas is injected.
  • a region in which plasma gas is injected according to each embodiment is indicated by O, and a region in which plasma gas is not injected is indicated by X.
  • a portion in which a processing step is performed using plasma is indicated by hatching.
  • the first substrate S1 and the second substrate S2 are disposed at positions symmetrical about the rotation axis of the substrate support 600 In the state, while changing the positions of the first substrate S1 and the second substrate S2 through the rotation of the substrate support part 600, the processing process is performed on the first substrate S1 and the second substrate S2. Can be.
  • the second substrate S2 may be located in the second region 20.
  • the first substrate S1 may be located in the second region 20.
  • the second substrate S2 may be located in the second zone 304.
  • the first substrate S1 may be located in the second zone 304.
  • the first region S1 and the second substrate S2 are respectively provided in the first region 10 and the second region 20, respectively.
  • the first region 10 and the second region 20 may be implemented such that two first substrates S1 and two second substrates S2 are located, respectively.
  • the first embodiment does not use plasma in all of the first region 10, the first region 302, the second region 20, and the second region 304.
  • the processing process for the substrate can be performed.
  • a heat treatment process and reactant gas injection may be changed.
  • the first embodiment can improve step coverage of a high dielectric material or the like.
  • the first embodiment is implemented to be performed in parallel with the heat treatment process and the atomic layer deposition method (ALD), so that the thickness of the thin film can be further increased compared to the deposition of the thin film by the atomic layer deposition method (ALD) alone.
  • ALD atomic layer deposition method
  • the second embodiment uses plasma only in the second region 20, and in the remaining first region 10, the first region 302, and the second region 304,
  • the processing process for the substrate can be performed without using plasma.
  • a processing process using reactant gas activated for the substrate may be performed in the second region 20, a processing process using reactant gas activated for the substrate may be performed in the second region 20, a processing process using reactant gas activated for the substrate may be performed in the second region 20, a processing process using reactant gas activated for the substrate may be performed.
  • This second embodiment can be implemented suitably for a low temperature process.
  • the second embodiment can be suitably implemented in a semiconductor low temperature nitride process.
  • the third embodiment uses plasma only in the first zone 302 and the remaining first zone 10, second zone 20, and third zone.
  • a processing process for the substrate can be performed without using plasma. The operation of the third embodiment will be described with reference to the first substrate S as follows.
  • the adsorption process using the source gas is performed in the first region 10 in the first region S1.
  • the substrate support 600 may remain stationary.
  • plasma may not be generated in the first zone 302 during the adsorption process.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20. .
  • the first zone 302 processes the first plasma using plasma for the first substrate S1.
  • pre-treatment treatment may be performed using plasma.
  • the third embodiment can improve the quality of the thin film deposited on the substrate by removing impurities in the source gas adsorbed on the substrate using plasma in the first zone 302. After the first substrate S1 passes through the first zone 302, plasma may not be generated in the first zone 302.
  • a deposition process using reactant gas is performed in the second region 20 in the second region 20.
  • the substrate support 600 may remain stationary.
  • plasma may not be generated in the first region 302.
  • the first substrate S1 may move from the second region 20 through the second region 304 to the first region 10. .
  • plasma may be generated in the first zone 302.
  • plasma may not be generated in the first zone 302.
  • plasma is generated in the first zone 302 only while the substrate support 600 is rotating, and plasma is not generated in the first zone 302 while the substrate support 600 is stopped.
  • the third embodiment may be implemented such that purge gas is continuously injected into the third region 30 while both the substrate support 600 is rotating and the substrate support 600 is stopped.
  • the fourth embodiment uses plasma in each of the first zone 302 and the second zone 20, as well as the remaining first zone 10 and second zone ( In 304), a processing process for the substrate may be performed without using plasma.
  • the operation of the fourth embodiment will be described with reference to the first substrate S1 as follows.
  • the adsorption process using the source gas is performed in the first region 10 in the first region S1.
  • the substrate support 600 may remain stationary.
  • plasma may not be generated in the first zone 302 during the adsorption process.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20.
  • the first zone 302 processes the first plasma using plasma for the first substrate S1.
  • pre-treatment treatment may be performed using plasma.
  • the fourth embodiment can improve the quality of the thin film deposited on the substrate by removing impurities in the source gas adsorbed on the substrate using plasma in the first zone 302. While plasma is generated in the first region 302, plasma may not be generated in the second region 20. In addition, after the first substrate S1 passes through the first zone 302, plasma may not be generated in the first zone 302.
  • the deposition process using the reactant gas activated for the first substrate S1 in the second region 20 is performed. This can be done.
  • the substrate support 600 may remain stationary.
  • the fourth embodiment is implemented such that the substrate having the source gas adsorption and pre-Treatment treatment in the first region 10 and the first region 302 is exposed to plasma again in the second region 20.
  • the effect of the Gap-Fill can be improved by reducing the deposition thickness of the surface. Meanwhile, plasma may not be generated in the first region 302 during the deposition process.
  • the first substrate S1 may move from the second region 20 through the second region 304 to the first region 10. .
  • plasma may be generated in the first zone 302.
  • plasma may not be generated in the second region 20.
  • plasma is generated in the first zone 302 only while the substrate support 600 is rotating, and plasma is not generated in the first zone 302 while the substrate support 600 is stopped.
  • plasma is not generated in the second region 20 only while the substrate support 600 is stopped, and plasma is not generated in the second region 20 while the substrate support 600 is rotated.
  • the fourth embodiment may be implemented such that purge gas is continuously injected into the third region 30 while both the substrate support 600 is rotating and the substrate support 600 is stopped.
  • the fifth embodiment uses plasma in each of the first zone 302, the second zone 20, and the second zone 304, as well as the remaining first zone. (10) It is possible to perform a process for a substrate without using plasma. The operation of the fifth embodiment will be described with reference to the first substrate S as follows.
  • an adsorption process using a source gas is performed in the first region 10 in the first region S1.
  • the substrate support 600 may remain stationary.
  • plasma may be generated in the second region 20. Also, plasma may not be generated in the first zone 302 and the second zone 304 during the adsorption process.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20.
  • the first zone 302 processes the first plasma using plasma for the first substrate S1.
  • pre-treatment treatment may be performed using plasma.
  • the fifth embodiment can improve the quality of the thin film deposited on the substrate by removing impurities in the source gas adsorbed on the substrate using plasma in the first zone 302. While plasma is generated in the first region 302, plasma may not be generated in the second region 20.
  • the fifth embodiment may be implemented to generate plasma in the second zone 304. After the first substrate S1 passes through the first zone 302, plasma may not be generated in the second zone 304.
  • the deposition process using the reactant gas activated for the first substrate S1 in the second region 20 is performed. This can be done.
  • the substrate support 600 may remain stationary.
  • the fifth embodiment is implemented such that the substrate having the source gas adsorption and pre-Treatment treatment in the first region 10 and the first region 302 is exposed to plasma again in the second region 20.
  • the effect of the Gap-Fill can be improved by reducing the deposition thickness of the surface. Meanwhile, during the deposition process, plasma may not be generated in the first zone 302 and the second zone 304.
  • the first substrate S1 may move from the second region 20 through the second region 304 to the first region 10. .
  • the second zone 304 processes the second plasma using plasma for the first substrate S1.
  • the fifth embodiment increases the densification of the thin film deposited on the substrate by removing impurities in the thin film deposited on the substrate in the second zone 304 to further improve the quality of the thin film deposited on the substrate. Can be improved.
  • the fifth embodiment can reduce the generation of a deposition film by breaking the ligand of the source gas with respect to the substrate on which the source gas has been adsorbed through the Pre-Treatment process.
  • the deposited thin film can be implemented to be more dense.
  • plasma may not be generated in the second region 304, plasma may not be generated in the second region 20.
  • plasma may not be generated in the second zone 304.
  • the fifth embodiment may be implemented to generate plasma in the first zone 302. After the first substrate S1 passes through the second zone 304, plasma may not be generated in the first zone 302.
  • plasma is generated in the first zone 302 and the second zone 304 only while the substrate support 600 is rotating, and the first zone (while the substrate support 600 is stopped) 302) and the second zone 304 may be implemented so that plasma is not generated.
  • plasma is not generated in the second region 20 only while the substrate support 600 is stopped, and plasma is not generated in the second region 20 while the substrate support 600 is rotated.
  • the fifth embodiment may be implemented such that purge gas is continuously injected into the third region 30 while the substrate support 600 is rotated and while the substrate support 600 is stopped.
  • the sixth embodiment uses plasma in each of the second region 20 and the second region 304, as well as the rest of the first region 10 and the second region.
  • a processing process for the substrate may be performed without using plasma.
  • the operation of the sixth embodiment will be described with reference to the first substrate S as follows.
  • an adsorption process using a source gas is performed in the first region 10 in the first region S1.
  • the substrate support 600 may remain stationary.
  • plasma may be generated in the second region 20.
  • plasma may not be generated in the second zone 304 during the adsorption process.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20.
  • the sixth embodiment generates plasma in the second zone 304 and the second zone ( 20) may be implemented so that plasma is not generated.
  • plasma may not be generated in the second zone 304.
  • the deposition process using the reactant gas activated for the first substrate S1 in the second region 20 is performed. This can be done.
  • the substrate support 600 may remain stationary. Meanwhile, plasma may not be generated in the second region 304 during the deposition process.
  • the first substrate S1 may move from the second region 20 through the second region 304 to the first region 10. .
  • the second zone 304 processes the second plasma using plasma for the first substrate S1.
  • the sixth embodiment increases the densification of the thin film deposited on the substrate by removing impurities in the thin film deposited on the substrate in the second zone 304, thereby further improving the quality of the thin film deposited on the substrate. Can be improved.
  • the substrate after depositing the thin film on the substrate through the reactant gas activated by the plasma in the second region 20, the substrate is rotated through the rotation of the substrate support 600 to post-treat using plasma. It can be implemented so that the processing is done. Therefore, the sixth embodiment can shorten the process time and further improve the quality of the thin film.
  • plasma may not be generated in the second region 20.
  • plasma may not be generated in the second zone 304.
  • plasma is generated in the second zone 304 only while the substrate support 600 is rotating, and plasma is not generated in the second zone 304 while the substrate support 600 is stopped. Can be implemented.
  • plasma is not generated in the second region 20 only while the substrate support 600 is stopped, and plasma is not generated in the second region 20 while the substrate support 600 is rotated. Can be implemented.
  • the sixth embodiment may be implemented such that purge gas is continuously injected into the third region 30 while the substrate support 600 is rotated and while the substrate support 600 is stopped.
  • the seventh embodiment uses plasma only in the second zone 304 and the remaining first zone 10 and the first zone 302. , And in the second region 20, a processing process for the substrate may be performed without using plasma.
  • the operation of the seventh embodiment will be described with reference to the first substrate S as follows.
  • the adsorption process using the source gas is performed in the first region 10 in the first region S1.
  • the substrate support 600 may remain stationary.
  • plasma may not be generated in the second zone 304 during the adsorption process.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20. .
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20.
  • the seventh embodiment may be implemented so that plasma is not generated in the second zone 304.
  • plasma may not be generated in the second zone 304.
  • a deposition process using reactant gas is performed in the second region 20 in the second region 20.
  • the substrate support 600 may remain stationary.
  • plasma may not be generated in the second region 304.
  • the first substrate S1 may move from the second region 20 through the second region 304 to the first region 10. .
  • the second zone 304 processes the second plasma using plasma for the first substrate S1.
  • the seventh embodiment increases the densification of the thin film deposited on the substrate by removing impurities inside the thin film deposited on the substrate in the second zone 304, thereby further improving the quality of the thin film deposited on the substrate. Can be improved.
  • plasma may not be generated in the second zone 304.
  • plasma is generated in the second zone 304 only while the substrate support 600 is rotating, and plasma is not generated in the second zone 304 while the substrate support 600 is stopped.
  • the seventh embodiment may be implemented such that purge gas is continuously injected into the third region 30 while both the substrate support 600 is rotating and the substrate support 600 is stopped.
  • the eighth embodiment uses plasma in each of the first zone 302 and the second zone 304, and the remaining first zone In (10) and the second region 20, a processing process for the substrate may be performed without using plasma.
  • the operation of the eighth embodiment will be described with reference to the first substrate S as follows.
  • the adsorption process using the source gas is performed in the first region 10 in the first region S1.
  • the substrate support 600 may remain stationary. Also, plasma may not be generated in the first zone 302 and the second zone 304 during the adsorption process.
  • the first substrate S1 may move from the first region 10 through the first zone 302 to the second region 20. .
  • the first zone 302 processes the first plasma using plasma for the first substrate S1.
  • pre-treatment treatment may be performed using plasma.
  • the eighth embodiment can improve the quality of the thin film deposited on the substrate by removing impurities in the source gas adsorbed on the substrate by using plasma in the first zone 302. After the first substrate S1 passes through the first zone 302, plasma may not be generated in the first zone 302.
  • the eighth embodiment may be implemented to generate plasma in the second zone 304. After the first substrate S1 passes through the first zone 302, plasma may not be generated in the second zone 304.
  • a deposition process using reactant gas is performed in the second region 20 in the second region 20.
  • the substrate support 600 may remain stationary.
  • plasma may not be generated in the first zone 302 and the second zone 304.
  • the first substrate S1 may move from the second region 20 through the second region 304 to the first region 10. .
  • the second zone 304 processes the second plasma using plasma for the first substrate S1.
  • the eighth embodiment increases the densification of the thin film deposited on the substrate by removing impurities in the thin film deposited on the substrate in the second zone 304, thereby further improving the quality of the thin film deposited on the substrate. Can be improved.
  • the eighth embodiment can reduce the generation of a deposition film by breaking the ligand of the source gas with respect to the substrate on which the source gas has been adsorbed through the Pre-Treatment treatment, and by the atomic layer deposition method (ALD) through the Post-Treatment treatment.
  • the deposited thin film can be implemented to be more dense.
  • the eighth embodiment may be implemented to generate plasma in the first zone 302. After the first substrate S1 passes through the second zone 304, plasma may not be generated in the first zone 302. As described above, in the eighth embodiment, plasma is generated in the first zone 302 and the second zone 304 only while the substrate support 600 is rotating, and the first zone (while the substrate support 600 is stopped) 302) and the second zone 304 may be implemented so that plasma is not generated. Meanwhile, the eighth embodiment may be implemented such that purge gas is continuously injected into the third region 30 while both the substrate support 600 is rotating and the substrate support 600 is stopped.
  • the substrate processing apparatus when a processing process using plasma is performed in at least one of the first zone 302 and the second zone 304, the substrate support 600 is rotated Plasma is generated in at least one of the first zone 302 and the second zone 304 only during the same time as well as plasma in both the first zone 302 and the second zone 304 while the substrate support 600 is stopped. Can be implemented so that is not generated. Accordingly, the substrate processing apparatus according to the present invention prevents plasma generated in at least one of the first zone 302 and the second zone 304 from affecting the adsorption process and the deposition process, thereby adsorbing and depositing It is implemented to further improve the quality of the processed substrate.
  • the substrate processing method according to the present invention may be performed through the substrate processing apparatus according to the present invention described above.
  • the substrate processing method according to the present invention may include the following steps.
  • a source gas is injected into the first region 10 to perform an adsorption process (S11).
  • the first gas injection unit 100 may spray the source gas to the first region 10. have. Accordingly, the adsorption process may be performed on the first substrate S1 located in the first region 10.
  • the substrate support part 600 may be maintained in a stopped state.
  • the substrate support part 600 is rotated so that the first substrate S1 is located in the second region 20 (S12).
  • the step S12 may be performed by moving the first substrate S1 from the first region 10 to the second region 20 by rotating the substrate support 600.
  • the first substrate S1 may move from the first region 10 to pass through the first region 302 of the third region 30 to be located in the second region 20.
  • a reactant gas is injected into the second region 20 to perform a deposition process (S13).
  • the step S13 may be performed by the second gas injection unit 200 spraying reactant gas to the second region 20. Accordingly, the deposition process may be performed on the first substrate S1 located in the second region 20.
  • the substrate support part 600 may be maintained in a stopped state.
  • the substrate support 600 is rotated so that the first substrate S1 is located in the first region 10 (S14).
  • the step S14 may be performed by moving the first substrate S1 from the second area 20 to the first area 10 by rotating the substrate support part 600.
  • the first substrate S1 may move from the second region 20 to pass through the second region 304 of the third region 30 to be located in the first region 10.
  • the substrate processing method according to the present invention can deposit a thin film on the first substrate S1 using an atomic layer deposition method (ALD).
  • the substrate processing method according to the present invention may include the step of continuously spraying the purge gas to the third region (30).
  • the substrate processing method according to the present invention when depositing a thin film on the first substrate (1), the thin film on the second substrate (S2) disposed at a symmetrical position around the rotation axis of the substrate support 600 It can be implemented to deposit. That is, the substrate processing method according to the present invention may perform the above-described steps in parallel with respect to the first substrate S1 and the second substrate S2. In this case, a plurality of the first substrate S1 and the second substrate S2 may be located in the first region 10 and the second region 20, respectively.
  • the deposition process may be performed by spraying the reactant gas activated by using plasma in the second region 20.
  • the substrate processing method according to the present invention can be suitably implemented in a low temperature process.
  • the substrate processing method according to the present invention can be suitably implemented in a semiconductor Low Temperature Nitride process.
  • Plasma for the second region 20 may be generated only while the substrate support 600 is stopped. Plasma may not be generated in the second region 20 while the substrate support part 600 rotates.
  • the substrate support 600 is such that the first substrate S1 passes through the first zone 302.
  • Rotating may be made by generating plasma in the first region 302 while the first substrate S1 passes through the first region 302 of the third region 30.
  • the substrate processing method according to the present invention may be implemented such that the first plasma processing using plasma is performed on the first substrate S1 in the first zone 302. That is, in the first zone 302, pre-treatment treatment may be performed using plasma. Accordingly, the substrate processing method according to the present invention can improve the quality of the thin film deposited on the substrate by removing impurities in the source gas adsorbed on the substrate using plasma in the first zone 302.
  • Plasma generation for the first zone 302 may be achieved by the first plasma injection unit 302a spraying plasma gas to the first zone 302.
  • Plasma for the first zone 302 may be generated only while the substrate support 600 is rotated. Plasma may not be generated in the first zone 302 while the substrate support 600 is stopped.
  • the substrate support 600 is such that the first substrate S1 passes through the second zone 304. Rotating, it may be made by generating a plasma in the second region 304 while the first substrate (S1) passes through the second region 304 of the third region (30). Accordingly, the substrate processing method according to the present invention may be implemented such that a second plasma processing using plasma is performed on the first substrate S1 in the second zone 304. That is, post-treatment treatment may be performed in the second zone 304 using plasma.
  • the substrate processing method according to the present invention removes impurities in the thin film deposited on the substrate in the second zone 304 to increase densification of the thin film deposited on the substrate, thereby increasing the density of the thin film deposited on the substrate.
  • the quality can be further improved.
  • Plasma generation for the second zone 304 may be achieved by the second plasma injection unit 304b spraying plasma gas to the second zone 304.
  • Plasma for the second zone 304 may be generated only while the substrate support 600 is rotated. Plasma may not be generated in the second zone 304 while the substrate support 600 is stopped.
  • This may be achieved by generating plasma in the first zone 302 and the second zone 304 of the third region 30. Accordingly, in the substrate processing method according to the present invention, Pre-Treatment processing is performed using plasma in the first zone 302, and Post-Treatment processing is performed using plasma in the second zone 304. Can be implemented.
  • the substrate processing method according to the present invention can reduce the generation of a deposition film by breaking the ligand of the source gas with respect to the substrate on which the source gas is adsorbed through the pre-treatment process, and the atomic layer deposition method (ALD) through the post-treatment process ) May be implemented so that the thin film deposited can be further densified.
  • ALD atomic layer deposition method
  • plasma for the first zone 302 and plasma for the second zone 304 may be generated only while the substrate support 600 is rotated. Plasma may not be generated in both the first zone 302 and the second zone 304 while the substrate support 600 is stopped.
  • the substrate processing method according to the present invention when the substrate processing method according to the present invention is processed using plasma in at least one of the first zone 302 and the second zone 304, only when the substrate support 600 is rotated Plasma is generated in at least one of the first zone 302 and the second zone 304 and the plasma is not generated in both the first zone 302 and the second zone 304 while the substrate support 600 is stopped. Can be implemented. Accordingly, the substrate processing method according to the present invention prevents the plasma generated in at least one of the first zone 302 and the second zone 304 from affecting the adsorption process and the deposition process, thereby adsorbing and depositing It is implemented to further improve the quality of the processed substrate. On the other hand, the substrate processing method according to the present invention may perform a processing process for the substrate through the steps as described in each of the first to eighth embodiments of the substrate processing apparatus according to the present invention described above.

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Abstract

La présente invention concerne un dispositif de traitement de substrat et un procédé de traitement de substrat, le dispositif de traitement de substrat comprenant : une chambre ; une partie de support de substrat installée dans un espace de traitement à l'intérieur de la chambre de façon à permettre à un ou plusieurs substrats de tourner ; une première partie de pulvérisation de gaz pour pulvériser un gaz source sur une première zone de l'espace de traitement ; une deuxième partie de pulvérisation de gaz pour pulvériser, sur une deuxième zone de l'espace de traitement, un gaz réactif réagissant avec le gaz source sur la deuxième zone ; et une troisième partie de pulvérisation de gaz pour pulvériser, sur une troisième zone, un gaz de purge pour diviser la première zone et la deuxième zone.
PCT/KR2019/015498 2018-11-14 2019-11-14 Dispositif de traitement de substrat et procédé de traitement de substrat WO2020101375A1 (fr)

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JP2021525621A JP2022507173A (ja) 2018-11-14 2019-11-14 基板処理装置および基板処理方法
CN201980068515.6A CN112912997A (zh) 2018-11-14 2019-11-14 基板处理装置和基板处理方法
US17/284,438 US11837445B2 (en) 2018-11-14 2019-11-14 Substrate processing device and substrate processing method
US18/493,618 US20240055233A1 (en) 2018-11-14 2023-10-24 Substrate processing device and substrate processing method

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KR10-2018-0140181 2018-11-14
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KR10-2019-0015756 2019-02-11
KR1020190079103A KR20200056273A (ko) 2018-11-14 2019-07-02 기판처리장치 및 기판처리방법
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008100846A2 (fr) * 2007-02-12 2008-08-21 Tokyo Electron Limited Systèmes et procédés de dépôt de couches atomiques
KR20140033659A (ko) * 2012-09-10 2014-03-19 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
US20140087567A1 (en) * 2012-09-27 2014-03-27 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
KR101625078B1 (ko) * 2009-09-02 2016-05-27 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
KR20160128219A (ko) * 2015-04-28 2016-11-07 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008100846A2 (fr) * 2007-02-12 2008-08-21 Tokyo Electron Limited Systèmes et procédés de dépôt de couches atomiques
KR101625078B1 (ko) * 2009-09-02 2016-05-27 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
KR20140033659A (ko) * 2012-09-10 2014-03-19 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
US20140087567A1 (en) * 2012-09-27 2014-03-27 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
KR20160128219A (ko) * 2015-04-28 2016-11-07 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법

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