WO2020138739A2

WO2020138739A2 - Shower head for chemical vapor deposition and deposition apparatus including same

Info

Publication number: WO2020138739A2
Application number: PCT/KR2019/016615
Authority: WO
Inventors: 육영진; 박진섭; 김가현
Original assignee: (주)에스테크
Priority date: 2018-12-28
Filing date: 2019-11-28
Publication date: 2020-07-02
Also published as: KR20200081912A; WO2020138739A3; KR102208609B1

Abstract

The present invention relates to a shower head for chemical vapor deposition and a deposition apparatus including same and, more particularly, to a shower head for chemical vapor deposition, which includes a supply tube for supplying reaction gas, a discharge tube for discharging discharge gas after reaction, and a reaction chamber, wherein the reaction chamber can be downsized by efficiently disposing the supply tube and the discharge tube and process speed can be improved by reducing residence time of the reaction gas. The present invention also relates to a deposition apparatus including same. To this end, the shower head for chemical vapor deposition according to the present invention includes a supply tube for supplying reaction gas and a discharge tube for discharging discharge gas after reaction. The supply tube and the discharge tube are disposed on one side of a process substrate, wherein one of the supply tube and the discharge tube may be disposed inside the other tube.

Description

Shower head for chemical vapor deposition and vapor deposition apparatus having same

The present invention relates to a shower head for chemical vapor deposition and a deposition apparatus having the same, and more specifically, the supply tube for supplying reactive gas and the discharge tube for discharging exhaust gas after reaction are efficiently arranged to miniaturize the reaction chamber. The present invention relates to a chemical vapor deposition shower head and a deposition apparatus having the same.

In general, a vacuum plasma reaction device is used in a thin film deposition and etching process during solar cell, semiconductor, and display manufacturing processes, and the vacuum plasma reaction device is a capacitively coupled plasma (CCP) and an ICP (according to the plasma generation structure). Inductively Coupled Plasma (Inductively Coupled Plasma).

The vacuum plasma reaction apparatus includes an injector for supplying a reactive gas and a reaction chamber provided with an exhaust port for discharging the gas after the reaction, but the conventional injector and the exhaust port are disposed at mutually spaced locations within the reaction chamber.

An example of the arrangement of a conventional injector and an exhaust port is a structure in which an injector for supplying a reaction gas is provided above the reaction chamber, and an exhaust port for exhausting gas is formed below the reaction chamber.

However, when the injector and the exhaust port are arranged in this way, the arrangement between the components constituting the reaction chamber is complicated, so that the degree of freedom in design is reduced, and eventually it is difficult to efficiently arrange the components in the reaction chamber.

In addition, when the apparatus for mass production or large area is implemented using the arrangement of the injector and the exhaust port as described above, the size of the reaction chamber is increased more than necessary due to the inefficient arrangement of the injector and the exhaust port, as well as the reaction chamber. The longer the residence time of the reaction gas within, the higher the probability of contamination of the reaction gas, and there is a problem that the inside of the reaction chamber is also contaminated.

Therefore, it is necessary to improve these areas.

The technical problem to be solved in the present invention is to provide a shower head for chemical vapor deposition and a deposition apparatus having the same, which can efficiently arrange a supply tube for supplying a reactive gas and a discharge tube for discharging the exhaust gas after the reaction. .

In addition, the present invention is to provide a shower head for chemical vapor deposition capable of miniaturization of a reaction chamber and a deposition apparatus equipped with the same, even when implementing a device for mass production or large area through efficient arrangement of a supply tube and a discharge tube.

In addition, the present invention provides a chemical vapor deposition shower head and a deposition apparatus having the same, which can shorten the residence time of the reaction gas in the reaction chamber.

The shower head for chemical vapor deposition according to the present invention for solving the above technical problem includes a supply tube for supplying a reactive gas and a discharge tube for discharging the exhaust gas after the reaction, wherein the supply tube and the discharge tube are processes Arranged on one side of the substrate, one tube of the supply tube and the discharge tube may be arranged inside the other tube.

At this time, the end of the supply tube may be disposed relatively closer to the process substrate than the end of the discharge tube.

The supply manifold provided with the supply tube, and further includes a discharge manifold provided with the discharge tube, and the supply manifold and the discharge manifold may be stacked in the vertical direction.

At this time, the supply manifold and the discharge manifold may further include a height adjustment unit for adjusting the separation distance between each other.

In addition, a through hole through which a tube provided in a manifold disposed above may pass may be formed in a manifold disposed below the supply manifold and the discharge manifold.

At this time, one of the supply manifold and the discharge manifold is provided with a guide bar extending in the vertical direction, and a guide hole through which the guide bar can be formed may be formed in the other manifold.

A deposition apparatus equipped with a shower head for chemical vapor deposition according to the present invention includes a supply manifold provided with a supply tube to supply a reaction gas to a process substrate, and a discharge manifold provided with a discharge tube to discharge the exhaust gas after reaction It may include a shower head equipped with a plurality of the reaction head is disposed inside the reaction chamber.

At this time, inside the reaction chamber, a plurality of shower heads are stacked in the vertical direction, and supply pipes simultaneously supplying reaction gas to the plurality of supply manifolds and exhaust gases discharged from the plurality of discharge manifolds. It may further include a discharge pipe for discharging at the same time.

Alternatively, a plurality of the shower heads are continuously arranged on a plane inside the reaction chamber, and the reaction gas supplied through the supply pipe is supplied to the process substrate while sequentially passing through the plurality of supply manifolds, and after reaction The exhaust gas may be discharged through an exhaust pipe while sequentially passing through the plurality of exhaust manifolds.

In this case, a connection part may be provided to connect a plurality of adjacent shower heads to each other.

The connecting portion may include a coupling protrusion provided in one shower head so that a plurality of the shower heads are directly connected to each other, and a coupling groove provided in the other shower head to be combined with the coupling protrusion.

Alternatively, the connecting portion may include a connecting pipe communicating the plurality of shower heads.

According to the shower head for chemical vapor deposition according to the present invention having the above-described configuration and the deposition apparatus having the same, the supply tube for supplying the reactant gas and the exhaust tube for discharging the exhaust gas after the reaction are superimposed and space utilization is improved. Therefore, it is possible to secure design freedom.

In addition, according to the present invention, since the supply tube and the discharge tube are efficiently arranged, miniaturization is possible even when implementing a device for mass production or large area.

In addition, according to the present invention, since the residence time of the reaction gas in the reaction chamber is shortened, it is possible to effectively prevent the reaction gas or the inside of the reaction chamber from being contaminated, and the process speed can be improved.

1 is a perspective view showing a shower head according to an embodiment of the present invention.

Figure 2 is a cross-sectional view showing the arrangement state of the supply tube and the discharge tube of the present invention, Figure 2 (a) is a view showing the arrangement state according to an embodiment, Figure 2 (b) is according to another embodiment It is a diagram showing the arrangement state.

3 is a cross-sectional view showing a state in which the shower head is separated according to an embodiment of the present invention.

4 is a cross-sectional view showing a state in which a shower head is combined according to an embodiment of the present invention.

Figure 5 (a) is a cross-sectional view showing a supply flow path inside the supply manifold according to an embodiment of the present invention, Figure 5 (b) is a discharge flow path inside the discharge manifold according to an embodiment of the present invention It is a sectional view showing.

6 is a side view showing a shower head according to another embodiment of the present invention.

7 is a side view showing a deposition apparatus according to an embodiment of the present invention.

8 is a plan view showing a supply manifold provided in a deposition apparatus according to another embodiment of the present invention.

9 is a plan view showing a supply manifold provided in a deposition apparatus according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily practice. The present invention can be implemented in many different forms and is not limited to the embodiments described herein. In the drawings, parts not related to the description are omitted in order to clearly describe the present invention, and the same reference numerals are attached to the same or similar elements throughout the specification.

In this specification, terms such as “include” or “have” are intended to indicate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, and one or more other features. It should be understood that the existence or addition possibilities of fields or numbers, steps, actions, components, parts or combinations thereof are not excluded in advance. In addition, when a part such as a layer, film, region, plate, etc. is said to be "above" another part, this includes not only the case "directly above" the other part but also another part in the middle. Conversely, when a portion of a layer, film, region, plate, or the like is said to be “under” another portion, this includes not only the case “underneath” another portion, but also another portion in the middle.

1 is a perspective view showing a shower head according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing the arrangement of the supply tube and the discharge tube of the present invention, Figure 2 (a) is according to an embodiment Figure 2 (b) is a view showing the arrangement state according to another embodiment, Figure 3 is a cross-sectional view showing a state in which the shower head according to an embodiment of the present invention is separated, 4 is a cross-sectional view showing a state in which a shower head is coupled according to an embodiment of the present invention, and FIG. 5(a) is a cross-sectional view showing a supply flow path inside the supply manifold according to an embodiment of the present invention , Figure 5 (b) is a cross-sectional view showing a discharge flow path inside the discharge manifold according to an embodiment of the present invention, Figure 6 is a side view showing a shower head according to another embodiment of the present invention, Figure 7 Is a side view showing a deposition apparatus according to an embodiment of the present invention, Figure 8 is a plan view showing a supply manifold provided in a deposition apparatus according to another embodiment of the present invention, Figure 9 is another view of the present invention It is a plan view showing a supply manifold provided in the vapor deposition apparatus according to the embodiment.

1, the shower head for chemical vapor deposition according to an embodiment of the present invention includes a supply tube 110 for supplying a reaction gas and a discharge tube 210 for discharging the exhaust gas after the reaction . The supply tube 110 and the discharge tube 210 are provided on one side of the process substrate 10, in particular, one tube of the supply tube 110 and the discharge tube 210 is disposed inside the other tube do.

That is, in the conventional case, the placement efficiency is reduced by placing the injectors and the exhaust ports spaced apart from each other, and there have been many problems due to an increase in the residence time of the reaction gas, but in the case of an embodiment of the present invention, the supply tube 110 and the discharge By supplying one of the tubes of the tube 210 inside the other tube, the supply tube 110 and the discharge tube 210 are provided on one side of the process substrate 10 to improve the batch efficiency and the reaction gas It is possible to shorten the residence time.

A plurality of supply tubes 110 and discharge tubes 210 may be provided in the supply manifold 100 and the exhaust manifold 200, which will be described later, and the arrangement may be arranged in a lattice structure. The lattice structure is a polygonal structure, and geometric arrangements such as a hexagon (honeycomb), a pentagon, and an intersection are possible.

The supply tube 110 and the discharge tube 210 may be made of non-conductor such as quartz or ceramic for plasma reaction.

When the reaction gas is supplied into the reaction chamber 30 to be described later through the supply tube 110, the plasma reaction is performed and the exhaust gas is discharged through the discharge tube 210. Therefore, as described above, when the supply tube 110 and the discharge tube 210 are arranged in a lattice shape, it is possible to completely create the same environment in the reactivity of the reactant gas at the center and edge portions of the process substrate 10. That is, the reaction gas stays in the reaction chamber 30 for a short time and is immediately discharged, and it is possible to improve the process speed through rapid discharge of the reaction gas.

A mass flow controller (MFC) may be installed to control the flow rate of the reaction gas supplied through the supply tube 110. In addition, a throttle valve is installed between the discharge tube 210 and a pump (not shown) connected thereto to control the flow rate of the discharged gas discharged through the discharge tube 210 and the pressure in the reaction chamber 30. Can be.

At this time, the end of the supply tube 110 may be disposed relatively closer to the process substrate 10 than the end of the discharge tube 210. When configured in this way, it is possible to secure effective reactivity through the supplied reaction gas.

The arrangement of the supply tube 110 and the discharge tube 210 is as shown in (a) of FIG. 2, the supply tube 110 in a state in which the supply tube 110 is arranged inside the discharge tube 210 ) May be disposed closer to the process substrate 10 than the end of the discharge tube 210. Or, as shown in Figure 2 (b), in the state that the discharge tube 210 is configured to be disposed inside the supply tube 110, the end of the supply tube 110 is more process than the end of the discharge tube 210 It may be disposed relatively adjacent to the substrate 10.

Referring to the embodiment shown in (a) of FIG. 2, the ratio of the supply area surrounded by the inner circumferential surface of the supply tube 110 and the discharge area between the inner circumferential surface of the discharge tube 210 and the outer circumferential surface of the supply tube 110 is 1: Although it may be configured as 1, the ratio of the supply area and the discharge area may be configured in a ratio of 1:2, 1:3, 1:4, etc. depending on the reaction conditions.

At this time, the reaction gas is a gas diluted with at least one selected from SiH ₄ , Si ₂ H ₆ , SiCl ₄ , SiHCl ₃ , and SiF ₄ in the deposition process in H ₂ or He gas. In addition, the reaction gas may be characterized in that the gas is a mixture of one or more selected from C ₄ F ₈ , NF ₃ , SF ₆ , Ar, O ₂ during the etching process. Here, the reaction gas may be a concept including a precursor gas.

The reaction gas is decomposed in a plasma atmosphere to deposit a thin silicon film on the substrate. The plasma frequency for the plasma reaction may be 13.56 MHz, 27.12 MHz, 40 MHz, 54.24 MHz, 60 MHz, and the like. In addition, the process pressure during etching may be about 1 to 100 mTorr, and the process pressure during deposition may be about 50 mTorr to atmospheric pressure (ie, about 760 Torr).

At this time, the shower head according to an embodiment of the present invention, as shown in Figures 3 and 4, the supply manifold 100 is provided with a plurality of supply tubes (110). Inside the supply manifold 100, as shown in Fig. 5 (a), a supply flow path 101 through which the reaction gas moves is formed, and the supply flow path 101 has a plurality of supply tubes 110 It is formed to communicate with each other. When the reaction gas is supplied to one side of the supply manifold 100, it moves to the plurality of supply tubes 110 through the supply flow path 101 and is then supplied into the reaction chamber 30.

In addition, the discharge manifold 200 is provided with a plurality of discharge tubes (210). Inside the discharge manifold 200, as shown in Figure 5 (b), the discharge flow path 201 to which the discharge gas moves after the reaction is formed, the discharge flow path 201 is a plurality of discharge tubes 210 ) Are formed to communicate with each other. After the reaction inside the reaction chamber 30, the exhaust gas moves to the discharge tube 210, and then is discharged to the outside of the reaction chamber 30 through the discharge channel 201.

As shown in FIG. 3, the supply manifold 100 and the exhaust manifold 200 are coupled by relative movement such that the supply manifolds 100 and the exhaust manifolds 200 are stacked with each other in a state of being vertically arranged. do. In addition, in the process where the supply manifold 100 and the discharge manifold 200 are combined, the supply tube 110 penetrates through the inside of the discharge tube 210, and as shown in FIG. 4, the supply manifold ( 100) and the discharge manifold 200 is completed, the end of the supply tube 110 is disposed relatively closer to the process substrate 10 than the end of the discharge tube 210.

At this time, as shown in Figure 6, the supply manifold 100 and the discharge manifold 200 may be provided with a height adjustment unit 300 for adjusting the separation distance between each other. 6, the height adjustment unit 300 may be configured such that the height of the supply manifold 100 is adjusted while the height of the discharge manifold 200 is fixed, but on the contrary, the supply manifold It is also possible to configure the height of the discharge manifold 200 to be adjusted while the height of the 100 is fixed. Alternatively, it is also possible to configure the height of both the supply manifold 100 and the discharge manifold 200 to be adjusted.

When the height adjustment unit 300 is provided as described above, it is possible to adjust the protruding length in which the supply tube 110 is exposed to the outside of the discharge tube 210, thereby enabling adjustment of the protruding length according to the reaction conditions. .

The height adjustment unit 300 may be configured using the rack 310 and the pinion 320, but any configuration can be used as long as the height is adjustable such as a ball screw.

In this case, a through hole 200a through which a tube provided in a manifold disposed above is penetrated may be formed in a manifold disposed below the supply manifold 100 and the discharge manifold 200. That is, as shown in FIG. 3, when the supply manifold 100 is disposed above the discharge manifold 200, a through hole 200a is formed in the discharge manifold 200 disposed below. The supply tube 110 provided in the supply manifold 100 is inserted into the discharge tube 210 after passing through the through hole 200a. At this time, it is preferable that a separate sealing member (not shown) is provided between the through hole 200a formed in the discharge manifold 200 and the supply tube 110, and the discharge manifold 200 is provided by providing the sealing member as described above. ) It is possible to prevent the exhaust gas moving inside from leaking to the outside.

Alternatively, it is also possible to configure the discharge manifold 200 to be disposed above the supply manifold 100, in which case the supply manifold 100 has a through hole 200a through which the discharge tube 210 passes. do. Also in this case, as described above, it is preferable that a separate sealing member (not shown) is provided between the through-hole 200a formed in the supply manifold 100 and the discharge tube 210, through which the supply manifold is provided. It is possible to prevent the reaction gas moving inside the fold 100 from leaking to the outside.

As described above, the supply tube 110 provided in the supply manifold 100 passes through the discharge tube 210 provided in the discharge manifold 200, wherein the supply tube 110 and the discharge tube ( It is preferable that the supply tube 110 is configured to pass through the discharge tube 210 while the central axis of the 210) is disposed on the coaxial. If the central axis of the supply tube 110 and the discharge tube 210 are arranged to be inclined to each other, the discharge area formed between the supply tube 110 and the discharge tube 210 is not constant, so discharge of the exhaust gas is smooth. Because it may not be.

Therefore, one of the supply manifold 100 and the discharge manifold 200 is provided with a guide bar 410 formed extending in the vertical direction, and the guide bar 410 described above is drawn into the other manifold. A possible guide hole 420 is formed. When the guide member 400 including the guide bar 410 and the guide hole 420 is formed as described above, when the supply manifold 100 and the discharge manifold 200 are combined, the supply tube 110 and the discharge tube While the central axis of 210 is disposed on the coaxial, it is possible to combine them.

As an example of this, as shown in FIG. 6, the guide bar 410 may be extended to the supply manifold 100 and the guide hole 420 may be formed to the discharge manifold 200.

Of course, the guide bar 410 and the guide hole 420 may be formed in a state in which the formation positions thereof are mutually changed.

A deposition apparatus equipped with a shower head for chemical vapor deposition according to an embodiment of the present invention includes a supply manifold 100 provided with a supply tube 110 to supply a reaction gas to the process substrate 10, and exhaust gas after reaction The discharge manifold 200 provided with the discharge tube 210 to discharge the shower head 20 and a reaction chamber 30 in which the shower head 20 is disposed.

The temperature of the process substrate 10 needs to be adjusted in the range of about 100 to 1300°C to ensure reactivity. Of course, preferably, the crystalline silicon substrate temperature needs to be adjusted in the range of 200 to 950°C. Therefore, this temperature should be maintained uniformly over the entire process substrate 10. For this, a heater may be provided on the process substrate 10, and an induction heater may be used as the heater. In addition, the heater is coated with a coating layer on the surface of the heater to prevent corrosion reactions from corrosive reaction gases. Therefore, the coating layer is formed through coating of quartz, ceramic, silicon nitride film, and silicon carbide film.

A deposition apparatus equipped with a shower head for chemical vapor deposition according to an embodiment of the present invention may generate plasma in a capacitively coupled plasma (CCP) method. In the case of the CCP method, electron acceleration occurs due to an electric field formed between electrodes, and plasma can be formed by obtaining energy from these accelerated electrons. In this CCP method, an electric field is formed by DC voltage between upper and lower electrodes, and plasma is generated and controlled, and it is advantageous to secure plasma uniformity.

At this time, a plurality of shower heads 20 may be disposed inside the reaction chamber 30. When a plurality of shower heads 20 are provided as described above, it is possible to process a large number of process substrates 10 or a large area process substrate 10.

A shielding film (not shown) for shielding electromagnetic waves may be additionally configured outside the reaction chamber 30.

As shown in FIG. 7, it is possible to configure the plurality of shower heads 20 to be stacked in the vertical direction inside the reaction chamber 30. In the conventional case, since the injector for supplying the process gas and the exhaust port for discharging the gas are formed at spaced apart positions, it was difficult to arrange a plurality of them in the vertical direction, but in the case of one embodiment of the present invention, the supply tube 110 and the discharge Since the tubes 210 are mutually superposed on one side of the process substrate 10, even if a plurality of shower heads 20 are stacked in the vertical direction, the structure is not complicated, so space utilization is improved and design freedom is ensured. .

In addition, the supply pipe 120 is provided to simultaneously supply the reaction gas to the plurality of supply manifolds 100 in the state where the shower head 20 is stacked in the vertical direction, and the plurality of discharge manifolds 200 are provided. The discharge pipe 220 may be provided to simultaneously discharge the exhaust gas discharged from.

In this way, the structure is simple and mass production is possible.

At this time, the reaction chamber 30 may be provided with a partition member 31 so that a plurality of shower heads 20 stacked in the vertical direction are disposed in mutually distinct regions. The partition member 31 may be partitioned such that the shower heads 20 are disposed in mutually distinct regions within the single reaction chamber 30, or, the single reaction chamber 30 may include a plurality of reaction chambers 30. ).

In addition, it is also possible to configure such that a plurality of shower heads 20 are continuously disposed on a plane inside the reaction chamber 30. At this time, the reaction gas supplied through the supply pipe 120 is supplied to the process substrate 10 while sequentially passing through the plurality of supply manifolds 100, and after the reaction, the exhaust gas reacts with the plurality of exhaust manifolds 200. It is configured to be discharged through the discharge pipe 220 while passing sequentially.

In order to configure as described above, a connection part 500 may be provided so that a plurality of adjacent shower heads 20 are interconnected.

At this time, as shown in FIG. 8, the above-described connection part 500 includes a coupling protrusion 510 provided on one side of the shower head 20 such that a plurality of shower heads 20 are directly connected to each other, and such a coupling protrusion ( 510) may include a coupling groove 520 provided in the other shower head 20. As described above, when the plurality of shower heads 20 are directly connected through the coupling protrusion 510 and the coupling groove 520, the large-area process substrate 10 can be used.

In addition, as illustrated in FIG. 9, the above-described connection part 500 may include a connection pipe 530 communicating the plurality of shower heads 20. In this way, when each shower head 20 is connected through the connection pipe 530, it is possible to use a plurality of process substrates 10 simultaneously.

As described above, since the supply tube 110 and the discharge tube 210 are efficiently arranged, miniaturization is possible even when implementing a device for mass production or large area.

Although one embodiment of the present invention has been described, the spirit of the present invention is not limited to the embodiments presented herein, and those skilled in the art to understand the spirit of the present invention, within the scope of the same spirit, addition and modification of components However, other embodiments may be easily proposed by deletion, addition, or the like, but this will also be considered within the scope of the present invention.

Claims

In the shower head for chemical vapor deposition,

A supply tube for supplying a reaction gas; And

Discharge tube for discharging the exhaust gas after the reaction;

Including,

The supply tube and the discharge tube are arranged on one side of the process substrate,

A shower head in which one of the supply tube and the discharge tube is disposed inside the other tube.
According to claim 1,

The end of the supply tube is a shower head disposed relatively closer to the process substrate than the end of the discharge tube.
According to claim 1,

Further comprising a supply manifold provided with the supply tube, and a discharge manifold provided with the discharge tube,

A shower head in which the supply manifold and the discharge manifold are stacked vertically.
According to claim 3,

A shower head further comprising a height adjustment unit that adjusts a separation distance between the supply manifold and the discharge manifold.
According to claim 3,

A shower head having a through hole through which a tube provided in a manifold disposed above is formed in a manifold disposed below the supply manifold and the discharge manifold.
The method of claim 5,

Any one of the supply manifold and the discharge manifold is provided with a guide bar extending in the vertical direction,

In the other manifold, a shower head having a guide hole through which the guide bar can be drawn.
In the deposition apparatus equipped with a shower head for chemical vapor deposition,

A shower head provided with a supply manifold provided with a supply tube to supply a reaction gas to the process substrate, and a discharge manifold provided with a discharge tube to discharge the exhaust gas after the reaction; And

A reaction chamber in which a plurality of the shower heads are disposed;

Deposition apparatus comprising a.
The method of claim 7,

A plurality of shower heads are stacked in the vertical direction in the reaction chamber,

A deposition apparatus further comprising a supply pipe for simultaneously supplying a reaction gas to a plurality of the supply manifolds, and a discharge pipe for simultaneously discharging exhaust gases discharged from the plurality of discharge manifolds.
The method of claim 7,

A plurality of the shower heads are continuously arranged on a plane inside the reaction chamber,

The reaction gas supplied through the supply pipe is supplied to the process substrate while sequentially passing through a plurality of the supply manifolds,

After the reaction, the exhaust gas is deposited through the exhaust pipe while sequentially passing through the plurality of exhaust manifolds.
The method of claim 9,

Deposition apparatus provided with a connection so that a plurality of adjacent shower heads are interconnected.
The method of claim 10,

The connecting portion is a deposition apparatus comprising a coupling protrusion provided in one shower head so that a plurality of the shower heads are directly connected to each other, and a coupling groove provided in the other shower head to be combined with the coupling protrusion.
The method of claim 10,

The connecting portion is a deposition apparatus comprising a connecting pipe communicating a plurality of the shower head.