KR102208609B1 - Shower head for chemical vapor deposition and depositing apparatus using the same - Google Patents

Abstract

The present invention relates to a shower head for chemical vapor deposition and a deposition apparatus having the same, and more particularly, to reduce the size of the reaction chamber by efficiently arranging a supply tube for supplying a reaction gas and a discharge tube for discharging exhaust gas after reaction. It is possible to reduce the reaction gas residence time and improve the process speed, it relates to a chemical vapor deposition shower head and a deposition apparatus having the same. To this end, the shower head for chemical vapor deposition according to the present invention includes a supply tube for supplying a reaction gas and a discharge tube for discharging exhaust gas after reaction, and the supply tube and the discharge tube are disposed on one side of the process substrate. , One of the supply tube and the discharge tube may be disposed inside the other tube.

Description

A shower head for chemical vapor deposition and a deposition apparatus having the same TECHNICAL FIELD

The present invention relates to a shower head for chemical vapor deposition and a deposition apparatus having the same, and more particularly, to reduce the size of the reaction chamber by efficiently arranging a supply tube for supplying a reaction gas and a discharge tube for discharging exhaust gas after reaction. It is possible to reduce the reaction gas residence time and improve the process speed, it relates to a chemical vapor deposition shower head and a deposition apparatus having the same.

In general, a vacuum plasma reaction device is used in the thin film deposition and etching process during the manufacturing process of solar cells, semiconductors, and displays. These vacuum plasma reaction devices are CCP (Capacitively Coupled Plasma) and ICP (Capacitively Coupled Plasma) and ICP ( Inductively Coupled Plasma).

Such a vacuum plasma reaction apparatus includes a reaction chamber provided with an injector for supplying a reaction gas and an exhaust port for discharging the gas after the reaction, and the conventional injector and the exhaust port are disposed at positions spaced apart from each other in the reaction chamber.

An example of the arrangement of the injector and the exhaust port in the related art is a structure in which an injector for supplying a reaction gas is provided at an upper side of a reaction chamber, and an exhaust port for discharging gas is formed at a lower side of the reaction chamber.

However, when the injector and the exhaust port are arranged in this way, the arrangement between the components constituting the reaction chamber becomes complicated and the degree of design freedom decreases, and as a result, it becomes difficult to efficiently arrange the components in the reaction chamber.

In addition, if a device for mass production or a large area is implemented using the above-described arrangement of the injector and the exhaust port, not only the size of the reaction chamber becomes larger than necessary due to the inefficient arrangement of the injector and the exhaust port. As the residence time of the reaction gas increases, the probability of contamination of the reaction gas increases, and there is a problem that the inside of the reaction chamber is also contaminated.

Therefore, there is a need for improvement in these areas.

Korean Patent Application Publication No. 10-2005-0112606 (published on December 1, 2005)

The technical problem to be solved in the present invention is to provide a chemical vapor deposition shower head capable of efficiently arranging a supply tube for supplying a reaction gas and a discharge tube for discharging an exhaust gas after reaction, and a deposition apparatus having the same. .

In addition, the present invention provides a chemical vapor deposition shower head capable of miniaturizing a reaction chamber even when implementing an apparatus for mass production or a large area through efficient arrangement of a supply tube and a discharge tube, and a deposition apparatus having the same.

In addition, the present invention provides a chemical vapor deposition shower head capable of shortening the residence time of a reaction gas in a reaction chamber, and a deposition apparatus having the same.

The shower head for chemical vapor deposition according to the present invention for solving the above technical problem includes a supply tube for supplying a reaction gas and a discharge tube for discharging an exhaust gas after reaction, and the supply tube and the discharge tube are processed Doedoe disposed on one side of the substrate, one of the supply tube and the discharge tube may be disposed inside the other tube.

In this case, an end of the supply tube may be disposed closer to the process substrate than an end of the discharge tube.

A supply manifold provided with the supply tube and a discharge manifold provided with the discharge tube may be further included, and the supply manifold and the discharge manifold may be stacked in a vertical direction.

At this time, it may further include a height adjustment unit for adjusting the separation distance between the supply manifold and the discharge manifold.

In addition, a through hole through which a tube provided in an upper manifold passes may be formed in a manifold disposed at a lower portion of the supply manifold and the discharge manifold.

At this time, one of the supply manifold and the discharge manifold may be provided with a guide bar extending in the vertical direction, and a guide hole through which the guide bar can be inserted may be formed in the other manifold.

The deposition apparatus with a shower head for chemical vapor deposition according to the present invention includes a supply manifold equipped with a supply tube to supply a reaction gas to a process substrate, and a discharge vanifold provided with a discharge tube to discharge exhaust gas after reaction. It may include a shower head equipped with and a reaction chamber in which a plurality of the shower heads are disposed.

In this case, a plurality of shower heads are stacked and arranged in an up-down direction in the reaction chamber, a supply pipe for simultaneously supplying reaction gas to a plurality of supply manifolds, and exhaust gas discharged from the plurality of discharge manifolds. It may further include a discharge pipe to discharge at the same time.

Alternatively, a plurality of shower heads are continuously arranged on a plane inside the reaction chamber, and the reaction gas supplied through a supply pipe is supplied to the process substrate while sequentially passing through a plurality of supply manifolds, and after the reaction The exhaust gas may be discharged through a discharge pipe while sequentially passing through the plurality of discharge manifolds.

In this case, a connection part may be provided so that a plurality of adjacent shower heads are connected to each other.

The connection part may include a coupling protrusion provided in one shower head so that the plurality of shower heads are directly connected to each other, and a coupling groove provided in the other shower head to be coupled with the coupling protrusion.

Alternatively, the connection part may include a connection pipe communicating the plurality of shower heads.

According to the shower head for chemical vapor deposition according to the present invention having the above configuration and the deposition apparatus having the same, the supply tube for supplying the reaction gas and the discharge tube for discharging the exhaust gas after the reaction are overlapped and arranged to improve space utilization. In addition, design freedom can be secured.

In addition, according to the present invention, since the supply tube and the discharge tube are efficiently arranged, miniaturization is possible even when a device for mass production or a large area is implemented.

In addition, according to the present invention, since the residence time of the reaction gas in the reaction chamber is shortened, contamination of the reaction gas or the reaction chamber inside can be effectively prevented, and the process speed can be improved.

1 is a perspective view showing a shower head according to an embodiment of the present invention.
2 is a cross-sectional view showing an arrangement state of a supply tube and a discharge tube of the present invention, FIG. 2 (a) is a view showing an arrangement state according to an embodiment, and FIG. 2 (b) is It is a diagram showing the arrangement state.
3 is a cross-sectional view showing a state in which the shower head is separated according to an embodiment of the present invention.
4 is a cross-sectional view showing a combined state of a shower head according to an embodiment of the present invention.
Figure 5 (a) is a cross-sectional view showing a supply flow path inside the supply manifold according to an embodiment of the present invention, Figure 5 (b) is a discharge flow path inside the exhaust manifold according to an embodiment of the present invention It is a cross-sectional view showing.
6 is a side view showing a shower head according to another embodiment of the present invention.
7 is a side view showing a deposition apparatus according to an embodiment of the present invention.
8 is a plan view showing a supply manifold provided in a deposition apparatus according to another embodiment of the present invention.
9 is a plan view showing a supply manifold provided in a deposition apparatus according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art can easily implement the present invention. The present invention may be implemented in various different forms, and is not limited to the embodiments described herein. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and the same reference numerals are assigned to the same or similar components throughout the specification.

In the present specification, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features. It is to be understood that the possibility of addition or presence of elements or numbers, steps, actions, components, parts, or combinations thereof is not preliminarily excluded. In addition, when a part such as a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the case where the other part is "directly above", but also the case where there is another part in the middle. Conversely, when a part such as a layer, film, region, plate, etc. is said to be "below" another part, this includes not only the case where the other part is "directly below", but also the case where there is another part in the middle.

1 is a perspective view showing a shower head according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing the arrangement of the supply tube and the discharge tube of the present invention, Figure 2 (a) is It is a diagram showing an arrangement state, FIG. 2(b) is a view showing an arrangement state according to another embodiment, and FIG. 3 is a cross-sectional view showing a state in which a shower head according to an embodiment of the present invention is separated, 4 is a cross-sectional view showing a state in which a shower head is coupled according to an embodiment of the present invention, and FIG. 5A is a cross-sectional view showing a supply flow path inside a supply manifold according to an embodiment of the present invention. 5(b) is a cross-sectional view showing a discharge passage inside a discharge manifold according to an embodiment of the present invention, and FIG. 6 is a side view showing a shower head according to another embodiment of the present invention, and FIG. 7 Is a side view showing a deposition apparatus according to an embodiment of the present invention, FIG. 8 is a plan view showing a supply manifold provided in a deposition apparatus according to another embodiment of the present invention, and FIG. 9 is another embodiment of the present invention. It is a plan view showing a supply manifold provided in the deposition apparatus according to the embodiment.

As shown in FIG. 1, the shower head for chemical vapor deposition according to an embodiment of the present invention includes a supply tube 110 for supplying a reaction gas and a discharge tube 210 for discharging an exhaust gas after the reaction. . The supply tube 110 and the discharge tube 210 are provided on one side of the process substrate 10, in particular, one of the supply tube 110 and the discharge tube 210 is disposed inside the other tube do.

That is, in the conventional case, because the injector and the exhaust port are disposed at a spaced apart from each other, there are many problems due to the decrease in the arrangement efficiency and the increase in the residence time of the reaction gas, but in the case of an embodiment of the present invention, the supply tube 110 and the discharge One of the tubes 210 is disposed inside the other tube, so that the supply tube 110 and the discharge tube 210 are provided on one side of the process substrate 10 to improve placement efficiency and react gas It is possible to shorten the residence time.

A plurality of supply tubes 110 and discharge tubes 210 may be provided in each of the supply manifold 100 and the discharge manifold 200 to be described later, and the arrangement may be arranged in a grid structure. The lattice structure is a polygonal structure, and geometric arrangements such as hexagons (honeycombs), pentagons, and intersections are possible.

The supply tube 110 and the discharge tube 210 may be made of a non-conductor such as quartz or ceramic for plasma reaction.

When the reaction gas is supplied into the reaction chamber 30 to be described later through the supply tube 110, after the plasma reaction is performed, the exhaust gas is discharged through the discharge tube 210. Therefore, as described above, when the supply tube 110 and the discharge tube 210 are arranged in a grid shape, it is possible to create an environment that is completely identical in the reactivity of the reaction gas at the center and the edge of the process substrate 10. That is, the reaction gas stays in the reaction chamber 30 for a short time and is immediately discharged, and the process speed can be improved through rapid discharge of the reaction gas.

A mass flow controller (MFC) may be installed to control the flow rate of the reaction gas supplied through the supply tube 110. In addition, a throttle valve is installed between the discharge tube 210 and a pump (not shown) connected thereto to control the flow rate of the exhaust gas discharged through the discharge tube 210 and the pressure in the reaction chamber 30 Can be.

In this case, the end of the supply tube 110 may be disposed closer to the process substrate 10 than the end of the discharge tube 210. With this configuration, effective reactivity can be secured through the supplied reactive gas.

The arrangement of the supply tube 110 and the discharge tube 210 is as shown in Figure 2 (a), in a state in which the supply tube 110 is arranged to be disposed inside the discharge tube 210, the supply tube 110 The end of) may be disposed relatively closer to the process substrate 10 than the end of the discharge tube 210. Alternatively, as shown in (b) of FIG. 2, in a state in which the discharge tube 210 is disposed inside the supply tube 110, the end of the supply tube 110 is more processed than the end of the discharge tube 210 It may be disposed relatively closer to the substrate 10.

Referring to the embodiment shown in (a) of FIG. 2, the ratio of the supply area surrounded by the inner circumferential surface of the supply tube 110 and the discharge area between the inner circumferential surface of the discharge tube 210 and the outer circumferential surface of the supply tube 110 is 1: It can be composed of 1, but depending on the reaction conditions, the ratio of the supply area and the discharge area may be composed of 1:2, 1:3, 1:4, etc.

At this time, the reactive gas is a gas obtained by diluting at least one selected from among SiH ₄ , Si ₂ H ₆ , SiCl ₄ , SiHCl ₃ , and SiF ₄ in H ₂ or He gas during the deposition process. In addition, the reactive gas may be a gas obtained by mixing at least one selected from among C ₄ F ₈ , NF ₃ , SF ₆ , Ar, and O ₂ during the etching process. Here, the reactive gas may be a concept including a precursor gas.

The reactive gas is decomposed in a plasma atmosphere to deposit a silicon thin film on the substrate. The plasma frequency for the plasma reaction may be 13.56 MHz, 27.12 MHz, 40 MHz, 54.24 MHz, 60 MHz, and the like. In addition, the process pressure during etching may be about 1 to 100 mTorr, and the process pressure during deposition may be about 50 mTorr to atmospheric pressure (ie, about 760 Torr).

In this case, the shower head according to an embodiment of the present invention is provided with a plurality of supply tubes 110 in the supply manifold 100 as shown in FIGS. 3 and 4. Inside the supply manifold 100, as shown in FIG. 5(a), a supply flow path 101 through which the reaction gas moves is formed, and the supply flow path 101 includes a plurality of supply tubes 110. It is formed to communicate with each other. When the reaction gas is supplied to one side of the supply manifold 100, the reaction gas is moved to the plurality of supply tubes 110 through the supply passage 101 and then supplied into the reaction chamber 30.

Further, the discharge manifold 200 is provided with a plurality of discharge tubes 210. Inside the discharge manifold 200, as shown in FIG. 5(b), a discharge flow path 201 through which the discharge gas moves after the reaction is formed, and the discharge flow path 201 includes a plurality of discharge tubes 210 ) Are formed to communicate with each other. After the reaction inside the reaction chamber 30, the exhaust gas moves to the discharge tube 210, and is then discharged to the outside of the reaction chamber 30 through the discharge passage 201.

As shown in FIG. 3, the supply manifold 100 and the discharge manifold 200 are coupled by moving relative to each other so that the supply manifold 100 and the discharge manifold 200 are stacked up and down. do. In addition, in the process of coupling the supply manifold 100 and the discharge manifold 200, the supply tube 110 penetrates the inside of the discharge tube 210, and as shown in FIG. 4, the supply manifold ( When the coupling between the 100 and the discharge manifold 200 is completed, the end of the supply tube 110 is disposed adjacent to the process substrate 10 relative to the end of the discharge tube 210.

In this case, as shown in FIG. 6, a height adjustment unit 300 may be provided to adjust a separation distance between the supply manifold 100 and the discharge manifold 200. As shown in FIG. 6, the height adjustment unit 300 may be configured to adjust the height of the supply manifold 100 while the height of the discharge manifold 200 is fixed. It is also possible to configure the height of the discharge manifold 200 to be adjusted while the height of the 100 is fixed. Alternatively, it is possible to configure both the height of the supply manifold 100 and the discharge manifold 200 to be adjusted.

When the height adjustment part 300 is provided in this way, the protrusion length of the supply tube 110 exposed to the outside of the discharge tube 210 can be adjusted, and through this, the protrusion length according to the reaction conditions can be adjusted. .

The height adjustment unit 300 may be configured using the rack 310 and the pinion 320, but any configuration may be used as long as the height can be adjusted such as a ball screw.

In this case, a through hole 200a through which a tube provided in a manifold disposed at an upper portion passes may be formed in a manifold disposed at a lower portion of the supply manifold 100 and the discharge manifold 200. That is, as shown in FIG. 3, when the supply manifold 100 is disposed above the discharge manifold 200, a through hole 200a is formed in the discharge manifold 200 disposed below, The supply tube 110 provided in the supply manifold 100 is inserted into the discharge tube 210 after passing through the through hole 200a. At this time, it is preferable that a separate sealing member (not shown) is provided between the through hole 200a formed in the discharge manifold 200 and the supply tube 110, and by providing a sealing member in this way, the discharge manifold 200 ) It is possible to prevent the exhaust gas moving inside from leaking to the outside.

Alternatively, it is possible to configure the discharge manifold 200 to be disposed above the supply manifold 100, and in this case, a through hole 200a through which the discharge tube 210 passes is formed in the supply manifold 100 do. In addition, even in this case, as described above, it is preferable that a separate sealing member (not shown) is provided between the through hole 200a formed in the supply manifold 100 and the discharge tube 210, through which the supply manifold It is possible to prevent the reaction gas moving inside the fold 100 from leaking to the outside.

As described above, the supply tube 110 provided in the supply manifold 100 passes through the discharge tube 210 provided in the discharge manifold 200, at this time, the supply tube 110 and the discharge tube ( It is preferable to configure the supply tube 110 to pass through the discharge tube 210 while maintaining the state where the central axis of 210) is disposed on the coaxial. If the central axes of the supply tube 110 and the discharge tube 210 are arranged to be inclined to each other, the discharge area formed between the supply tube 110 and the discharge tube 210 is not constant, so that the discharge gas is smoothly discharged. Because you may not be.

Therefore, one of the supply manifold 100 and the discharge manifold 200 is provided with a guide bar 410 extending in the vertical direction, and the aforementioned guide bar 410 is introduced into the other manifold. A possible guide hole 420 is formed. When the guide member 400 including the guide bar 410 and the guide hole 420 is formed as described above, when the supply manifold 100 and the discharge manifold 200 are coupled, the supply tube 110 and the discharge tube It is possible to combine them while maintaining the state where the central axis of 210 is disposed on the coaxial.

As an example of this, as shown in FIG. 6, a guide bar 410 may be extended in the supply manifold 100 and a guide hole 420 may be formed in the discharge manifold 200.

Of course, the guide bar 410 and the guide hole 420 may be formed in a state in which their formation positions are mutually changed.

The deposition apparatus provided with a shower head for chemical vapor deposition according to an embodiment of the present invention includes a supply manifold 100 provided with a supply tube 110 to supply a reactive gas to the process substrate 10, and exhaust gas after reaction. The discharge manifold 200 provided with the discharge tube 210 to discharge the shower head 20 and the reaction chamber 30 in which the shower head 20 is disposed therein.

The temperature of the process substrate 10 needs to be adjusted in the range of about 100 to 1300° C. to secure reactivity. Of course, preferably, the temperature of the crystalline silicon substrate needs to be adjusted in the range of 200 to 950 °C. Therefore, this temperature must be uniformly maintained for the entire process substrate 10. To this end, a heater may be provided on the process substrate 10, and an induction heater may be used as the heater. In addition, in the heater, a coating layer is formed on the surface of the heater in order to prevent a corrosion reaction from a corrosive reaction gas. Accordingly, the coating layer is formed by coating such as quartz, ceramic, silicon nitride film, and silicon carbide film.

The deposition apparatus provided with a shower head for chemical vapor deposition according to an embodiment of the present invention may generate plasma using a capacitively coupled plasma (CCP) method. In the case of the CCP method, electron acceleration occurs due to an electric field formed between electrodes, and plasma can be formed by obtaining energy from the accelerated electrons. This CCP method is configured such that an electric field is formed by a DC voltage between the upper and lower electrodes, and plasma is generated and controlled, and it is advantageous to ensure plasma uniformity.

In this case, a plurality of shower heads 20 may be disposed inside the reaction chamber 30. When a plurality of shower heads 20 are provided as described above, it is possible to process a large amount of process substrates 10 or a large area of process substrates 10.

A shielding film (not shown) for shielding separate electromagnetic waves may be additionally formed outside the reaction chamber 30.

As shown in FIG. 7, it is possible to configure a plurality of shower heads 20 to be stacked and arranged in the vertical direction in the reaction chamber 30. In the conventional case, since the injector for supplying the process gas and the exhaust port for discharging the gas are formed at spaced positions, it was difficult to arrange a plurality of them in the vertical direction, but in the case of an embodiment of the present invention, the supply tube 110 and the exhaust port Since the tubes 210 are disposed to overlap each other on one side of the process substrate 10, even if a plurality of shower heads 20 are stacked in the vertical direction, the structure is not complicated, so space utilization is improved and design freedom can be secured. .

In addition, in a state in which a plurality of shower heads 20 are stacked in the vertical direction, a supply pipe 120 is provided to simultaneously supply a reactive gas to the plurality of supply manifolds 100, and a plurality of discharge manifolds 200 A discharge pipe 220 may be provided to simultaneously discharge the exhaust gas discharged from.

When configured in this way, the structure is simple and mass production is possible.

In this case, a partition member 31 may be provided in the reaction chamber 30 so that a plurality of shower heads 20 stacked and disposed in a vertical direction may be disposed in separate regions. The partition member 31 may be partitioned so that the shower head 20 is disposed in a separate area within the single reaction chamber 30, or, the single reaction chamber 30 is formed by a plurality of reaction chambers 30. It is also possible to divide so as to be separated by ).

In addition, it is possible to configure a plurality of shower heads 20 to be continuously arranged on a plane inside the reaction chamber 30. At this time, the reaction gas supplied through the supply pipe 120 is supplied to the process substrate 10 while sequentially passing through the plurality of supply manifolds 100, and the exhaust gas after the reaction passes through the plurality of discharge manifolds 200. It is configured to be discharged through the discharge pipe 220 while passing through sequentially.

In order to configure as described above, a connection part 500 may be provided so that a plurality of shower heads 20 disposed adjacent to each other are connected to each other.

At this time, as shown in FIG. 8, the above-described connection part 500 includes a coupling protrusion 510 provided on one side of the shower head 20 so that the plurality of shower heads 20 are directly connected to each other, and such a coupling protrusion ( It may include a coupling groove 520 provided in the other side shower head 20 so as to be coupled to the 510. In this way, when the plurality of shower heads 20 are directly connected through the coupling protrusion 510 and the coupling groove 520, the process substrate 10 having a large area can be used.

In addition, as shown in FIG. 9, the above-described connection part 500 may include a connection pipe 530 communicating a plurality of shower heads 20. In this way, when each of the shower heads 20 is connected through the connection pipe 530, it is possible to use a plurality of process substrates 10 at the same time.

As described above, since the supply tube 110 and the discharge tube 210 are efficiently disposed, miniaturization is possible even when implementing a device for mass production or a large area.

Although one embodiment of the present invention has been described, the spirit of the present invention is not limited to the embodiments presented in the present specification, and those skilled in the art who understand the spirit of the present invention add or change components within the scope of the same spirit. Other embodiments may be easily proposed by deletion, addition, and the like, but it will be said that this is also within the scope of the present invention.

10 process substrate 20 shower head
30: reaction chamber 31: compartment member
100: supply manifold 101: supply flow path
110: supply tube 120: supply pipe
200: discharge manifold 200a: through hole
201: discharge flow path 210: discharge tube
220: discharge pipe 300: height adjustment unit
310: rack 320: pinion
400: guide member 410: guide bar
420: guide hole 500: connection
510: coupling protrusion 520: coupling groove
530: connecting pipe

Claims (12)

In the shower head for chemical vapor deposition,
A supply tube for supplying a reaction gas; And
A discharge tube for discharging exhaust gas after the reaction;
Including,
The supply tube and the discharge tube are disposed on one side of the process substrate,
One of the supply tube and the discharge tube is disposed inside the other tube,
Further comprising a supply manifold provided with the supply tube, and a discharge manifold provided with the discharge tube,
The supply manifold and the discharge manifold are stacked in an up-down direction,
A shower head further comprising a height adjustment unit for adjusting a separation distance between the supply manifold and the discharge manifold. The method of claim 1,
An end of the supply tube is disposed closer to the process substrate than an end of the discharge tube. delete delete The method of claim 1,
A shower head in which a through hole through which a tube provided in an upper manifold passes is formed in a manifold disposed at a lower portion of the supply manifold and the discharge manifold. The method of claim 5,
Any one of the supply manifold and the discharge manifold is provided with a guide bar extending in the vertical direction,
A shower head in which a guide hole into which the guide bar can be inserted is formed in the other manifold. In the vapor deposition apparatus provided with a shower head for chemical vapor deposition,
A shower head having a supply manifold having a supply tube to supply a reaction gas to the process substrate, and a discharge manifold having a discharge tube to discharge the discharge gas after the reaction; And
A reaction chamber in which a plurality of the shower heads are disposed;
Including,
The shower head further comprises a height adjustment unit for adjusting a separation distance between the supply manifold and the discharge manifold. The method of claim 7,
Inside the reaction chamber, a plurality of shower heads are stacked and disposed in the vertical direction,
A deposition apparatus further comprising a supply pipe for simultaneously supplying a reactive gas to a plurality of supply manifolds, and a discharge pipe for simultaneously discharging exhaust gas discharged from the plurality of discharge manifolds. The method of claim 7,
Inside the reaction chamber, a plurality of the shower heads are continuously arranged on a plane,
The reactive gas supplied through the supply pipe is supplied to the process substrate while sequentially passing through a plurality of supply manifolds,
After the reaction, the exhaust gas is discharged through a discharge pipe while sequentially passing through the plurality of discharge manifolds. The method of claim 9,
A deposition apparatus having a connection unit so that a plurality of adjacent shower heads are interconnected. The method of claim 10,
The connection part includes a coupling protrusion provided in one shower head so that the plurality of shower heads are directly connected to each other, and a coupling groove provided in the other shower head to be coupled with the coupling protrusion. The method of claim 10,
The evaporation apparatus including a connection pipe communicating the plurality of shower heads.

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