KR102021017B1 - Vacuum plasma reaction apparatus and Method for assembling the same - Google Patents

Abstract

A vacuum plasma reaction apparatus is disclosed. The vacuum plasma reaction apparatus includes a vacuum reactor and a vacuum plasma unit for depositing or etching a process substrate in the vacuum reactor by arranging a plurality of tubes arranged in a lattice structure in which a plasma reaction is supplied by the reaction gas or discharged after the reaction. Contains the assembly.

Description

Vacuum plasma reaction apparatus and method for assembling the same}

The present invention relates to a vacuum plasma reaction apparatus.

Vacuum plasma reactors are used for thin film deposition and etching in solar cells, semiconductors, and display processes. According to the plasma generation structure, the vacuum plasma reactor is classified into capacitively coupled plasma (CCP) and inductively coupled plasma (ICP).

Among them, the ICP plasma reactor is generally composed of a power supply and matching network, a coil for inductive coupling reaction, a plasma reaction tube and the like. High plasma density is advantageous for high yield, but due to its unique structure, it is difficult to make a large area. That is, the reaction area is limited to the tube diameter, so that the substrate area cannot be increased, which is disadvantageous for the large area process.

In addition, when the ICP reaction is applied to a large area, the plasma reaction region is limited to the diameter of the ICP coil. In addition, the gas path is complicated by the reaction gas is injected through the gas inlet to the gas outlet through the large surface of the substrate. In addition, the composition ratio of the reaction gas varies at the center and the edge portion of the substrate. This also causes a disadvantage of the large area.

In addition, in the implementation of a large-area device, when the residence time of the reaction gas becomes longer and the residence time of the reaction gas becomes longer, the probability that the reaction gas is contaminated with impurities increases, and precursor molecules do not contribute to deposition, Form a powder (powder). That is, the gas residence time is long, which causes powdering during the high pressure process. This causes pinholes and / or internal chamber contamination of the thin film. In order to solve this problem, there is a problem in that the residence time of the reaction gas must be shortened while maintaining the process pressure at a high pressure.

Finally, it is difficult to maintain a large temperature of the substrate uniformly due to the limitation of the hot wire structure when implementing a large area. In other words, one or a few strands of heat rays are arranged geometrically under the substrate, and nonuniformity of the substrate temperature occurs in a large area. In addition, it is very difficult to maintain a large substrate temperature when the substrate temperature is processed at a high temperature of about 1000 degrees Celsius.

1. Korea Registration No. 10-1236206 (Registration Date: February 18, 2013) 2. Korea Registration No. 10-0576093 (Registration Date: April 26, 2006)

The present invention has been proposed to solve the problems according to the above background, and an object thereof is to provide a vacuum plasma reaction apparatus and an assembly method thereof capable of increasing an arrangement according to a substrate area to facilitate a large area process.

In addition, another object of the present invention is to provide a vacuum plasma reaction apparatus and an assembly method thereof capable of maintaining a large area of substrate temperature uniformly when implementing a large area.

In addition, another object of the present invention is to provide a vacuum plasma reaction apparatus and a method for assembling thereof, which can reduce the residence time of the reaction gas while maintaining the process pressure at a high pressure.

The present invention provides a vacuum plasma reaction apparatus capable of extending the arrangement according to the substrate area to facilitate a large area process in order to achieve the problems presented above.

The vacuum plasma reaction device,

Vacuum reactor 510; And

A vacuum plasma for depositing or etching the process substrate 110 inside the vacuum reactor 510 is arranged in a lattice structure in which a plurality of tubes 101 are supplied with a reaction gas to perform a plasma reaction or discharge the exhaust gas after the reaction. Unit assembly 100; Characterized in that it comprises a.

At this time, some of the plurality of tubes 101 is a reaction unit 210 for supplying the reaction gas in a uniform ratio, the remaining of the plurality of tubes 101 is a gas outlet for discharging the exhaust gas after the reaction ( 220).

On the contrary, some of the plurality of tubes 101 may be reaction units 210 for supplying reactant gases at different ratios, and the remaining ones of the plurality of tubes 101 may discharge gas after the reaction. 220).

At this time, in all of the above two cases, the gas supply can be controlled by installing a mass flow controller (MFC) in the gas pipe flowing into the reactor.

In addition, a throttle valve may be installed between the gas outlet of the reactor and the pump so that the reactor has a structure capable of adjusting the exhaust flow rate and / or the pressure in the reactor.

The vacuum plasma reaction apparatus may further include a gas supply manifold 610 communicating with one end of some of the plurality of tubes 101 to supply a reaction gas.

The vacuum plasma reactor may further include a gas discharge manifold 620 communicating with one end of some of the plurality of tubes 101 to discharge the exhaust gas after the reaction. have.

The vacuum plasma reaction apparatus may include a plurality of heaters 720 arranged in a lattice form on the surface of the substrate 110.

Here, the plurality of heaters 720 may be an induction heater.

In addition, the plurality of heaters 720 may be characterized in that the temperature control, respectively.

In addition, the plurality of heaters 720 may be a conductor of any one of graphite, stainless steel, and tungsten.

In addition, the plurality of heaters 720 may be characterized in that the coating layer is formed on the surface to prevent the corrosion reaction from the reaction gas.

In addition, the coating layer may be any one of quartz, ceramic, silicon nitride film, and silicon carbide film.

In addition, the grid arrangement may be characterized in that the polygon.

In addition, the diameter of the plurality of tubes 101 may be characterized in that 1mm to 10cm.

The reaction gas may be a gas obtained by diluting at least one selected from SiH ₄ , Si ₂ H ₆ , SiCl ₄ , SiHCl ₃ , and SiF ₄ in H ₂ or He gas during the deposition process.

The reaction gas may be a gas in which at least one selected from C ₄ F ₈ , NF ₃ , SF ₆ , Ar, and O ₂ is mixed during the etching process.

In addition, the vacuum plasma reaction apparatus may include a grid electrode plate 900 provided between the vacuum plasma unit assembly 100 and the substrate 110.

In addition, the vacuum plasma reaction apparatus, the position movement to change the position of the grid electrode plate 900 to adjust the distance between the vacuum plasma unit assembly 100, the grid electrode plate 900 and the substrate 110 Means; it may be characterized in that it comprises a.

In addition, a DC voltage may be applied to the grid electrode plate 900 and the substrate 110.

In addition, the grid electrode plate 900 may be characterized in that the mesh structure.

In addition, the plasma frequency for the plasma reaction may be characterized in that one of 13.56MHz, 27.12MHz, 40MHz, 54.24MHz, 60MHz.

In addition, the process pressure during the etching may be 1 to 100mTorr, the deposition process process pressure may be characterized in that 50mTorr to 760Torr.

On the other hand, another embodiment of the present invention, comprising the steps of preparing a plurality of tubes 101 for receiving a reaction gas to perform a plasma reaction or discharge the exhaust gas after the reaction; Forming a vacuum plasma unit assembly (100) to deposit or etch the plurality of tubes (101) in a lattice arrangement; And installing the vacuum plasma unit assembly 100 in the vacuum reactor 510 in which the process substrate 110 to be deposited or etched is located inside.

According to the present invention, an ICP (Inductively Coupled Plasma) plasma reaction unit is made of a plurality of small tubes to implement a lattice arrangement structure, which can increase the arrangement according to the substrate area, thereby facilitating a large area process.

In addition, another effect of the present invention is that by utilizing a portion of the arranged tube as a gas outlet rather than a reaction unit, the gas flow path is simplified, so that the gas residence time is very short, so that a high pressure and high efficiency process is possible.

In addition, another effect of the present invention is that the reactivity of the gas at the center and the edge of the substrate is completely the same.

In addition, another effect of the present invention is that the residence time of the gas in the reactor is short, it is possible to suppress the generation of powder during the high pressure process to enable a high pressure process and advantageous in improving the process speed.

1 is a partial conceptual view of a vacuum plasma unit assembly 100 composed of a plurality of tubes according to an embodiment of the present invention.
FIG. 2 is a view showing some of the tubes shown in FIG. 1 showing the configuration of the reaction unit and the gas outlet.
3 is a conceptual diagram of an ICP unit assembly having a lattice arrangement consisting of a reaction unit and a gas outlet in accordance with FIG. 2.
4 is a conceptual diagram of a vacuum plasma unit assembly having a different ratio of a reaction unit and a gas outlet according to another embodiment of the present invention.
5 is a cross-sectional view of the vacuum plasma reaction apparatus using the structure of the reaction unit and the gas outlet shown in FIG.
FIG. 6 is a conceptual diagram in which a manifold is connected to the reaction unit and the gas outlet shown in FIG. 5.
FIG. 7 is a perspective view of a heater arranged in a lattice form on the process substrate illustrated in FIG. 5.
FIG. 8 is an example in which a reaction unit and a gas outlet are arranged on a process substrate shown in FIG. 7.
FIG. 9 is a perspective view of a grid electrode plate disposed between the process substrate shown in FIG. 8 and the vacuum plasma unit assembly according to another exemplary embodiment of the present disclosure.
FIG. 10 is a conceptual diagram of a position moving means for changing the position of the grid electrode plate shown in FIG. 9.
11 is a flowchart illustrating an assembly process of a vacuum plasma reaction apparatus according to another embodiment of the present invention.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the present invention.

In describing each drawing, like reference numerals are used for like elements.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. The term “and / or” includes any combination of a plurality of related items or any item of a plurality of related items.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art.

Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Should not.

Hereinafter, a vacuum plasma reaction apparatus and an assembly method thereof according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a partial conceptual view of a vacuum plasma unit assembly 100 composed of a plurality of tubes according to an embodiment of the present invention. Referring to FIG. 1, the vacuum plasma unit assembly 100 is configured by arranging a plurality of tubes 101 in a lattice arrangement. The lattice arrangement structure is a polygonal structure, and has a geometric arrangement of hexagonal (honeycomb), pentagon, and intersection.

The diameter of the tube 101 may be about 1 mm to 10 cm. That is, a plurality of small tubes 101 are made and arranged at regular intervals to form a lattice shape. The tube 101 is made of a nonconductor such as quartz or ceramic for plasma reaction.

Therefore, the number of tubes 101 may be increased and arranged according to the substrate area of the process substrate 110 to be deposited or etched. That is, it is easy for a large area process.

FIG. 2 is a view showing some of the tubes shown in FIG. 1 showing the configuration of the reaction unit and the gas outlet. Referring to FIG. 2, only one pair of tubes of the plurality of tubes 101 shown in FIG. 1 is shown. That is, one tube is a reaction unit 210 for receiving a reaction gas and performing a plasma reaction, and the other tube is a gas outlet 220 serving as a passage for discharging the exhaust gas after the reaction.

The reaction unit 210 includes a tube, a coil 211 wound around the tube exterior, a power supply 230 for supplying alternating current (AC) to the coil 211, and a matching network for matching the AC power to the coil ( 240) and the like. The matching network consists of a combination of capacitors and / or inductors.

The reaction unit 210 is an ICP (Inductively Coupled Plasma) reaction unit.

Referring to FIG. 2, a portion of the arranged tubes is used as a gas outlet 220 configured for pumping for discharging exhaust gas only after the reaction instead of the reaction unit 210.

Therefore, the reaction gas is supplied to the reaction unit 210 as shown by the arrow, and after the plasma reaction is performed by the reaction unit 210, the discharge gas is discharged through the gas outlet 220. Therefore, the same composition of the environment in the reactivity of the gas at the center and the edge of the process substrate 110 is possible. That is, the gas stays in the vacuum reactor (ie chamber) for a short time and immediately exits. This rapid discharge enables high pressure, high efficiency processes.

In this case, the gas supply can be controlled by installing a mass flow controller (MFC) (not shown) in the gas pipe (not shown) flowing into the reactor. In addition, a throttle valve may be installed between the gas outlet of the reactor and the pump (not shown) to manufacture a structure capable of adjusting the exhaust flow rate and / or the pressure in the reactor.

Of course, a shielding film may be further configured to separate the electromagnetic wave from the exterior of the reaction unit 210.

3 is a conceptual diagram of an ICP unit assembly 100 having a lattice arrangement structure consisting of a reaction unit and a gas outlet in accordance with FIG. 2. Referring to FIG. 3, a gas flow occurs as shown by an arrow (only a part), so that the gas flow path is simple and uniform in a large area. In particular, FIG. 3 shows a uniform ratio of the reaction unit 210 and the gas outlet 220. That is, the ratio of the reaction unit 210 and the gas outlet 220 is 1: 1.

4 is a conceptual diagram of a vacuum plasma unit assembly having a different ratio of a reaction unit and a gas outlet according to another embodiment of the present invention. Referring to FIG. 4, a portion of the arranged tubes is used as the gas outlet 220 instead of the reaction unit 210. Therefore, the ratio of the reaction unit 210 and the gas outlet 220 may not be 1: 1, but may be 1: 2, 1: 3, 1: 4, and the like.

FIG. 5 is a cross-sectional view of the vacuum plasma reaction apparatus 500 using the structure of the reaction unit and the gas outlet shown in FIG. 2. In particular, in FIG. 5, the ratio of the reaction unit 210 and the gas outlet 220 is 1: 1 as shown in FIG. 3. In addition, the process substrate 110 is disposed inside the vacuum reactor 510, and a plurality of reaction units 210 and gas outlets 220 are installed in the vacuum reactor 510. In FIG. 5, only half of the reaction unit 210 and the gas outlet 220 are coupled to the vacuum reactor 510, but for the purpose of understanding, various combinations are possible.

5, the gas is discharged from the reaction unit 210 to the adjacent gas outlet 220 as shown by the arrow. As shown in FIG. 5, gas flow occurs to simplify the gas flow path. Therefore, the reactivity of the gas in the center and the edge portion of the substrate 110 is the same. This is also advantageous for large area. In addition, since gas is discharged from the reaction unit 210 to the adjacent gas outlet 220, the residence time of the gas in the vacuum reactor is short, so that powder generation during the high pressure process is suppressed. Thus, a high pressure process is possible, which is advantageous for speeding up the process.

In this case, the reaction gas may be a gas obtained by diluting at least one selected from SiH ₄ , Si ₂ H ₆ , SiCl ₄ , SiHCl ₃ , and SiF ₄ in H ₂ or He gas during the deposition process. The reaction gas may be a gas in which at least one selected from C ₄ F ₈ , NF ₃ , SF ₆ , Ar, and O ₂ is mixed in an etching process. Here, the reaction gas may be a concept including a precursor gas.

The reaction gas is decomposed in a plasma atmosphere to deposit a silicon thin film on the substrate. The plasma frequency for the plasma reaction may be 13.56 MHz, 27.12 MHz, 40 MHz, 54.24 MHz, 60 MHz, and the like. In addition, the process pressure during etching may be about 1 to 100 mTorr, and the process pressure upon deposition may be about 50 mTorr to atmospheric pressure (ie, about 760 Torr).

FIG. 6 is a conceptual diagram in which a manifold is connected to the reaction unit and the gas outlet shown in FIG. 5. Referring to FIG. 6, a gas supply manifold 610 for supplying a reaction gas is in communication with one ends of the tubes used as the reaction unit 210. Meanwhile, a gas exhaust manifold 620 for discharging exhaust gas after the reaction is in communication with one end of the tubes used as the gas outlet 220.

That is, the gas is distributed and supplied to the individual reaction unit 210 through the gas supply manifold 610 separately communicated to the outside of the vacuum reactor 510. Thereafter, the gases through the gas outlet 220 inside the vacuum reactor 510 are combined into the pump line (not shown) through the gas discharge manifold 620.

FIG. 7 is a perspective view of a heater arranged in a lattice form on the process substrate 110 shown in FIG. 5. In general, the temperature of the substrate 720 needs to be adjusted in a range of about 100 to 1300 ° C. Of course, preferably, the crystalline silicon substrate temperature needs to be adjusted in the range of 200 to 950 ° C. Therefore, such a temperature should be kept uniform for the entire substrate 110.

To this end, in an embodiment of the present invention, as shown in FIG. 7, a plurality of heaters 720 are arranged on the surface of the substrate 110 in a lattice form of one wafer size. In particular, these multiple heaters 720 independently control the individual heater temperatures. That is, since there is a temperature difference for each part of the substrate 110, it is necessary to control each heater 720 to offset the difference.

Here, the plurality of heaters 720 may be an induction heater. In addition, the heater 720 uses a conductor such as graphite, stainless steel, and tungsten. In addition, a coating layer is formed on the surface of the heater 720 to prevent the corrosion reaction from the corrosive reaction gas.

Therefore, the coating layer (not shown) is formed through the coating of quartz, ceramic, silicon nitride film, silicon carbide film and the like.

FIG. 8 is an example in which a reaction unit and a gas outlet are arranged on a process substrate shown in FIG. 7. Referring to FIG. 8, an induction heater structure is combined with the reactor structure shown in FIG. 5. Therefore, there is an advantage of maintaining the substrate temperature of a high temperature even in the large area and the advantage of the reactor structure shown in FIG.

FIG. 9 is a perspective view of a grid electrode plate disposed between the process substrate shown in FIG. 8 and the vacuum plasma unit assembly according to another exemplary embodiment of the present disclosure. 9, the grid electrode plate 900 is arranged between the vacuum plasma unit assembly 100 and the substrate 110 to be used as a triode plasma apparatus. In this case, a DC voltage is applied not only to the grid electrode plate 900 but also to the substrate 110. That is, in the case of the ICP plasma system, a voltage must also be applied to the substrate.

In addition, the position shifting means for changing the position of the grid electrode 900 to adjust the distance between the grid electrode 900 and the substrate 110, the distance between the grid electrode 900 and the vacuum plasma unit assembly 100 (not shown) Is constructed. Therefore, one or more of the distance between the grid electrode 900 and the substrate 110 and the distance between the grid electrode 900 and the vacuum plasma unit assembly 100 may be adjusted to change process parameters. This process parameter can be controlled by varying the magnitude of the applied voltage over time.

As the magnitude of the voltage applied to the grid electrode 900 increases, the repulsive force between the ions generated in the plasma and the grid electrode 900 increases, and the degree of reducing or offsetting the speed at which the ions accelerate to the substrate 110 may be increased. . In addition, the grid electrode 900 may have a mesh structure. That is, the accelerated ions are prevented from directly colliding with the substrate.

FIG. 10 is a conceptual diagram of a position moving means for changing the position of the grid electrode plate shown in FIG. 9. Referring to FIG. 10, the position moving means includes a rack gear 1031, a pinion gear 1033, and a driving motor (not shown). The rack gear 1031 is disposed long in the vertical direction between the vacuum plasma unit assembly 100 and the process substrate 110.

The pinion gear 1033 is installed to mesh with the rack gear 1031, and one side is connected to the grid electrode 900. The pinion gear 1033 moves along the rack gear 1031 while the central shaft 1035 is connected to the drive motor to rotate when the drive motor is driven.

The rotation of the pinion gear 1033 shifts the position of the grid electrode 900, so that the distance n between the grid electrode 900 and the substrate 110 and between the grid electrode 900 and the vacuum plasma unit assembly 100. Allow to adjust the distance (m).

When the position of the grid electrode 900 is moved in the direction of the vacuum plasma unit assembly 100, the distance n between the grid electrode 900 and the substrate 110 is widened, and the grid electrode 900 and the vacuum plasma unit assembly are relatively larger. The distance m between 100 becomes narrow.

Although the position shifting means has been described with the combination of the rack gear 1031 and the pinion gear 1033, various means for shifting the position of the grid electrode can be employed.

In addition, the grid electrode 900 may have a structure in which a plurality of grid electrodes 900 are arranged in parallel to adjust the ion bombardment energy.

11 is a flowchart illustrating an assembly process of a vacuum plasma reaction apparatus according to another embodiment of the present invention. Referring to FIG. 11, a plurality of tubes 101 are prepared to receive a reaction gas to perform a plasma reaction or discharge the exhaust gas after the reaction (step S1110). Thereafter, the plurality of tubes 101 are arranged in a lattice arrangement to form a vacuum plasma unit assembly 100 for depositing or etching (step S1120). Thereafter, the vacuum plasma unit assembly 100 is installed in the vacuum reactor 510 in which the process substrate 110 to be deposited or etched is located (step S1130).

Of course, these steps are for understanding and may occur in a different order.

100: vacuum plasma unit assembly
101: tube
110: process substrate
210: reaction unit
220: gas outlet
500: vacuum plasma reaction apparatus
510: vacuum reactor
610: gas supply manifold
620: gas exhaust manifold
720: heater
900: grid electrode

Claims (24)

Vacuum reactor 510; And
A plurality of tubes (101) are lattice-shaped consisting of a first tube supplied with a reaction gas and performing a plasma reaction, and a second tube arranged side by side with the first tube and discharging the exhaust gas generated after the reaction from the first tube. And a vacuum plasma unit assembly 100 disposed in an array structure to deposit or etch the process substrate 110 inside the vacuum reactor 510.
And a grid electrode plate 900 disposed between the vacuum plasma unit assembly 100 and the process substrate 110.
The first tube is a reaction unit 210, the second tube is an outlet 220,
And a plurality of heaters 720 arranged on the surface of the substrate 110 in a lattice form.
The plurality of heaters 720 is a vacuum plasma reactor, characterized in that the temperature control each individually.
Claim 2 has been abandoned upon payment of a set-up fee. The method of claim 1,
The reaction gas is a vacuum plasma reaction apparatus, characterized in that supplied to the reaction unit 210 in a uniform ratio. Claim 3 has been abandoned upon payment of a set-up fee. The method of claim 1,
The reaction gas is supplied to the reaction unit 210 in a different ratio vacuum plasma reaction apparatus.
The method of claim 1,
And a gas supply manifold (610) communicating with one end of some of the plurality of tubes (101) to supply a reaction gas.
The method of claim 1,
And a gas discharge manifold (620) for communicating with one end of some of the plurality of tubes (101) to discharge the exhaust gas after the reaction.
delete Claim 7 was abandoned upon payment of a set-up fee. The method of claim 1,
The plurality of heaters 720 is a vacuum plasma reaction apparatus, characterized in that the induction heater.
delete The method of claim 1,
The plurality of heaters (720) is a vacuum plasma reactor, characterized in that the conductor of any one of graphite, stainless steel, and tungsten.
The method of claim 1,
The plurality of heaters 720 is vacuum plasma reaction apparatus, characterized in that the coating layer is formed on the surface to prevent the corrosion reaction from the reaction gas.
Claim 11 was abandoned upon payment of a set-up fee. The method of claim 10,
The coating layer is a vacuum plasma reaction apparatus, characterized in that any one of quartz, ceramic, silicon nitride film, and silicon carbide film.
Claim 12 was abandoned upon payment of a set-up fee. The method of claim 1,
The lattice arrangement structure is a vacuum plasma reactor, characterized in that the polygon.
Claim 13 was abandoned upon payment of a set-up fee. The method of claim 1,
The diameter of the plurality of tubes (101) is a vacuum plasma reactor, characterized in that 1mm to 10cm.
The method of claim 1,
The reaction gas is a vacuum plasma reactor, characterized in that the gas diluted with one or more selected from SiH ₄ , Si ₂ H ₆ , SiCl ₄ , SiHCl ₃ , SiF ₄ in H ₂ or He gas during the deposition process.
The method of claim 1,
The reaction gas is a vacuum plasma reactor, characterized in that the gas mixture of at least one selected from C ₄ F ₈ , NF ₃ , SF ₆ , Ar, O ₂ during the etching process.
delete The method of claim 1,
And position moving means for changing the position of the grid electrode plate 900 to adjust the distance between the vacuum plasma unit assembly 100, the grid electrode plate 900, and the substrate 110. Vacuum plasma reaction apparatus.
Claim 18 was abandoned when the set registration fee was paid. The method of claim 1,
Vacuum plasma reactor, characterized in that the direct current voltage is applied to the grid electrode plate (900) and the substrate (110). Claim 19 was abandoned upon payment of a set-up fee. The method of claim 1,
The grid electrode plate 900 is a vacuum plasma reactor, characterized in that the mesh structure.
The method of claim 1,
The plasma frequency for the plasma reaction is vacuum plasma reaction apparatus, characterized in that one of 13.56 MHz, 27.12 MHz, 40 MHz, 54.24 MHz, 60 MHz.
The method of claim 1,
The process pressure during the etching is 1 to 100mTorr, the deposition process is a vacuum plasma reaction apparatus, characterized in that 50mTorr to 760Torr.
Claim 22 was abandoned upon payment of a set-up fee. The method of claim 2 or 3,
And a mass flow controller (MFC) is installed in the gas pipe flowing into the vacuum reactor (510) to control the supply flow rate of the reaction gas.
The method of claim 2 or 3,
And a throttle valve is installed between the gas outlet of the reactor and the pump to adjust the exhaust flow rate and the pressure in the reactor.
Preparing a plurality of tubes 101 including a first tube supplied with a reaction gas and a second tube arranged in parallel with the first tube and discharging the exhaust gas generated after the reaction from the first tube; ;
Forming a vacuum plasma unit assembly (100) to deposit or etch the plurality of tubes (101) in a lattice arrangement; And
And installing the vacuum plasma unit assembly 100 in a vacuum reactor 510 in which a process substrate 110 to be deposited or etched is located.
A grid electrode plate 900 is installed between the vacuum plasma unit assembly 100 and the process substrate 110,
The first tube is a reaction unit 210, the second tube is an outlet 220,
On the surface of the substrate 110 a plurality of heaters 720 are arranged in a grid form,
The plurality of heaters 720 is a method of manufacturing a vacuum plasma reaction apparatus, characterized in that the temperature control each individually.

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