WO2017222350A1 - Gas module for atomic layer deposition apparatus, atomic layer deposition apparatus, and atomic layer deposition method using same - Google Patents

Abstract

A gas module for an atomic layer deposition apparatus is provided. A gas module for an atomic layer deposition apparatus, according to an embodiment of the present invention may comprise: a first type gas supply unit for sequentially providing a plurality of gases or providing a single gas toward a substrate according to an atomic layer deposition mode; and a plurality of second type gas supply units, arranged at both ends of the first type gas supply unit in the direction of the substrate, for providing a single gas.

Description

Atomic layer deposition equipment Gas module, atomic layer deposition equipment and atomic layer deposition method using the same

The present invention relates to an atomic layer deposition apparatus gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the same. More specifically, a seed atomic layer is formed through a time division atomic layer deposition process, and a space is formed on the seed atomic layer. The present invention relates to an atomic layer deposition apparatus gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the same to form a subsequent atomic layer through a split atomic layer deposition process.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like.

Recently, as the design rules of semiconductor devices are drastically finer, fine patterns of thin films are required, and the step height of regions where thin films are formed is also very large, and thus a fine pattern of atomic layer thickness can be formed very uniformly. In addition, the use of atomic layer deposition (ALD) with excellent step coverage has been increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes chemical reactions between gas molecules. However, unlike conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, the atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product by chemical reaction between the source materials is deposited on the substrate surface by adsorbing onto the substrate and then injecting a gas containing another source material into the process chamber.

However, the time-division atomic layer deposition method currently studied has the problem that productivity is low. Accordingly, the present inventors have invented an atomic layer deposition apparatus gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the same, while maintaining high quality of the atomic layer deposition thin film and improving productivity.

One technical problem to be solved by the present invention is to provide an atomic layer deposition equipment gas module, atomic layer deposition equipment and an atomic layer deposition method using the same to provide a high quality thin film and improve productivity.

Another technical problem to be solved by the present invention is to provide an atomic layer deposition equipment gas module, atomic layer deposition equipment and atomic layer deposition method using the same that can perform time division and space division atomic layer deposition in a single deposition equipment have.

Another technical problem to be solved by the present invention is to provide an atomic layer deposition apparatus gas module, atomic layer deposition apparatus and atomic layer deposition method using the same that can be miniaturized (foot print reduction) equipment.

The technical problem to be solved by the present invention is not limited by the above-mentioned problem.

The atomic layer deposition apparatus gas module according to an embodiment of the present invention, the first type gas supply unit and the first type gas for sequentially providing a plurality of gases or a single gas in accordance with the atomic layer deposition mode toward the substrate The supply unit may include a plurality of second type gas supply units disposed at both ends in the direction of the substrate and supplying a single gas.

According to an embodiment, when the atomic layer deposition mode is a time division atomic layer deposition mode, the first type gas supply unit sequentially supplies a plurality of gases toward the substrate, and the atomic layer deposition mode is space division. In the atomic layer deposition mode, the first type gas supply part may provide a single gas toward the substrate.

According to an embodiment, in the spatial division atomic layer deposition mode, the first type gas supply unit may provide a purge gas, and the second type gas supply units may provide a source gas and a reaction gas, respectively.

According to an embodiment of the present disclosure, the second type gas supply unit may further include a gas supply port and an exhaust port provided at both sides of the gas supply unit to prevent mixing of the gas.

The atomic layer deposition apparatus according to an embodiment of the present invention, the gas module and the source gas, the purge gas and the reaction gas for providing a source gas, purge gas, and the reaction gas toward the substrate sequentially or simultaneously sequentially After the time-division atomic layer deposition mode of providing towards the substrate to form a seed atomic layer, the source gas, the purge gas, and the reactant gas are simultaneously provided to correspond to the divided regions of the substrate to form a subsequent atomic layer on the seed atomic layer. It may include a control unit for performing a spatial division atomic layer deposition mode to form.

According to an embodiment of the present disclosure, the gas module may include at least two first type gas supply parts and at least three second type gas supply parts disposed alternately with the at least two first type gas supply parts.

According to an embodiment of the present disclosure, the control unit may sequentially provide the source gas, the purge gas, and the reaction gas toward the substrate through the at least two first type gas supply units in the time division atomic layer deposition mode. Can be.

According to an embodiment of the present disclosure, the control unit may provide the purge gas through the at least two first type gas supply units in the space division atomic layer deposition mode, and the source through the at least three second type gas supply units. It is possible to provide a gas and the reaction gas at the same time.

According to an embodiment of the present disclosure, the second type gas supply unit may prevent mixing of gases.

According to an embodiment of the present disclosure, the control unit may provide the source gas and the reaction gas toward the substrate through the at least three second type gas supply units in the space division atomic layer deposition mode, and through the exhaust port. By exhausting the source gas and the reactive gas injected toward the substrate, mixing of the gas can be prevented.

According to an embodiment, the at least two first type gas supply units and the at least three second type gas supply units may selectively provide a gas to be injected according to the time division atomic layer deposition mode or the space division atomic layer deposition mode. I can receive it.

According to an embodiment of the present disclosure, the controller may transfer the substrate in units of the divided region in the space division atomic layer deposition mode.

According to an embodiment of the present disclosure, in the space division atomic layer deposition mode, the controller may transfer the substrate in units of the divided regions, starting at a position overlapping with the gas module.

According to an embodiment of the present disclosure, the controller may transfer the substrate in the divided area unit in a first direction and then transfer the substrate in a second direction opposite to the first direction.

The atomic layer deposition method according to an embodiment of the present invention, the time-division atomic layer deposition step of depositing a seed atomic layer on the surface of the substrate by sequentially providing a source gas, purge gas, reaction gas, purge gas from the gas module and A spatially divided atomic layer deposition step of depositing a subsequent atomic layer on the seed atomic layer by simultaneously providing the source gas, the purge gas, the reaction gas, and the purge gas for each divided region of the substrate through the gas module; It may include.

According to an embodiment of the present disclosure, during the spatial division atomic layer deposition step, the substrate may be moved in units of divided regions of the substrate.

According to one embodiment, during the spatial division atomic layer deposition step, the substrate may be moved in units of divided regions of the substrate, starting at a position overlapping with the gas module.

According to an embodiment, the substrate may be moved in a first direction and in a second direction opposite to the first direction.

An atomic layer deposition apparatus according to an embodiment of the present invention, a gas module for providing a source gas, a purge gas, and a reaction gas toward the substrate sequentially or simultaneously and the source gas, the purge gas and the reaction gas sequentially the substrate After the time-division atomic layer deposition mode of providing toward to form a seed atomic layer, the source gas, the purge gas, and the reactive gas are simultaneously provided to correspond to the divided regions of the substrate to form a subsequent atomic layer on the seed atomic layer. It may be configured to include a control unit for performing a spatial division atomic layer deposition mode.

According to an embodiment of the present invention, since a subsequent atomic layer is formed on the seed atomic layer formed by the time division method by the spatial division method, productivity may be improved while improving the quality of the thin film.

According to the embodiment of the present invention, since the same gas module is used in the time division method and the space division method, the equipment can be simplified.

According to an embodiment of the present invention, the effects are not limited by the above-described effects.

1 is a view for explaining an atomic layer deposition equipment gas module according to an embodiment of the present invention.

2 is a flowchart illustrating an atomic layer deposition method according to an embodiment of the present invention.

3 is a view for explaining step S100 in detail according to an embodiment of the present invention.

4 is another diagram for describing in detail step S100 according to an exemplary embodiment.

5 is a view for explaining step S110 in detail according to an embodiment of the present invention.

6 is another view for explaining step S110 in detail according to an embodiment of the present invention.

7 is a view for explaining another implementation method of step S110 according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the exemplary embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed contents are thorough and complete, and that the spirit of the present invention can be sufficiently delivered to those skilled in the art.

In the present specification, when a component is mentioned to be on another component, it means that it may be formed directly on the other component or a third component may be interposed therebetween. In addition, in the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical contents.

In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. In addition, the term 'and / or' is used herein to include at least one of the components listed before and after.

In the specification, the singular encompasses the plural unless the context clearly indicates otherwise. In addition, the terms "comprise" or "having" are intended to indicate that there is a feature, number, step, element, or combination thereof described in the specification, and one or more other features or numbers, steps, configurations It should not be understood to exclude the possibility of the presence or the addition of elements or combinations thereof. In addition, the term "connection" is used herein to mean both indirectly connecting a plurality of components, and directly connecting.

In addition, in the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

1 is a view for explaining an atomic layer deposition equipment gas module according to an embodiment of the present invention.

The atomic layer deposition equipment gas module according to an embodiment of the present invention may form various thin film layers. For example, at least one thin film layer among a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer may be formed. According to an embodiment, the source gas for forming the metal thin film layer is one of Tri Methyl Aluminum (TMA), Tri Ethyl Aluminum (TEA), and Di Methyl Aluminum Chloride (DMACl), and the reaction gas is oxygen gas and ozone. It may be one of the gases. In this case, as the purge gas, any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more thereof may be used. According to another embodiment, the source gas for forming the silicon thin film layer may be one of silane (Silane, SiH 4), disilane (Disilane, Si 2 H 6), and silicon tetrafluoride (SiF 4) including a silicon, and a reaction gas. May be one of an oxygen gas and an ozone gas. In this case, as the purge gas, any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more thereof may be used. At this time, the source gas, the purge gas, the reaction gas is not limited thereto, and may be changed according to the needs of those skilled in the art.

Referring to FIG. 1, an atomic layer deposition equipment gas module 100 according to an embodiment of the present invention may provide a first gas that sequentially provides a plurality of gases or a single gas toward an substrate according to an atomic layer deposition mode. Type gas supply units 110a and 110b, which are disposed at both ends in the direction of the substrate with respect to the first type gas supply unit, include a plurality of second type gas supply units 130a, 130b, and 130c to provide a single gas. Can be. Hereinafter, each configuration will be described in detail.

The first type gas supply units 110a and 110b may be configured to inject a gas required for atomic layer deposition toward the substrate S. In this case, the first type gas supply units 110a and 110b may be disposed in the extending direction of the substrate. That is, two first type gas supply units 110a and 110b may be disposed in the extending direction of the substrate. Of course, the number of the first type gas supply may be more than two.

The first type gas supply units 110a and 110b may sequentially provide a plurality of gases or a single gas toward the substrate S according to the atomic layer deposition mode. In the present specification, the atomic layer deposition mode includes a time division atomic layer deposition mode for depositing an atomic layer in a time division method and a space division atomic layer deposition mode for depositing an atomic layer in a spatial division method by spatially dividing a substrate. Can be understood.

When the atomic layer deposition mode is a time division atomic layer deposition mode, the first type gas supply units 110a and 110b may sequentially provide a source gas, a purge gas, a reaction gas, and a purge gas toward the substrate S. have. That is, the first type gas supply units 110a and 110b sequentially supply source gas, purge gas, reaction gas, and purge gas toward the substrate S, so that the seed atom layer of high quality is formed on the substrate S. (seed atomic layer) may be deposited.

When the atomic layer deposition mode is the spatial division atomic layer deposition mode, the first type gas supply units 110a and 110b may provide one of a source gas, a purge gas, and a reactive gas toward the substrate S. have. For example, the first type gas supply units 110a and 110b may provide a purge gas toward the substrate S.

According to an embodiment of the present disclosure, the first type gas supply units 110a and 110b may receive a corresponding gas from an external gas supply source according to an atomic layer deposition mode. For example, in the time division deposition mode, the first type gas supply units 110a and 110b receive the source gas from the source gas source 140, and then receive the purge gas from the purge gas source 150. The reaction gas may be provided from the reaction gas source 160. In contrast, in the space division deposition mode, the first type gas supply units 110a and 110b may receive a purge gas from the purge gas source 150. According to another embodiment, a gas supply source for supplying gas to the first type gas supply units 110a and 110b may be provided inside each gas supply unit.

The second type gas supply units 130a, 130b, and 130c may be disposed at both ends of the first type gas supply units 110a and 110b. Accordingly, the first type gas supply units 110a and 110b and the second type gas supply units 130a, 130b and 130c may be alternately disposed. More specifically, the second type gas supply unit 130a, the first type gas supply unit 110a, the second type gas supply unit 130b, the first type gas supply unit 110b, and the second type gas supply unit 130c. May be arranged in order. That is, when the first type gas supply units 110a and 110b are two, the second type gas supply units 130a, 130b and 130c may be three. If the number of the first type gas supply units is three or more, the number of the second type gas supply units may be increased correspondingly.

The second type gas supply units 130a, 130b, and 130c are provided at both sides of the gas supply ports 132a, 132b, and 132c, and the gas supply ports, and exhaust ports 134a, 136a, 134b, 136b, and 134c to prevent mixing of the gases. , 136c). Accordingly, for example, a gas supplied from one gas supply port 132a is selectively provided to a desired divided area on the substrate S, and a gas that may enter the other area may be selected from the gas supply port ( 132a) may be exhausted by exhaust ports 134a and 136a at both ends. The exhaust port may also exhaust residual by-product.

According to an embodiment, the exhaust ports 134a, 136a, 134b, 136b, 134c, and 136c communicate with a bar dry pump 170 and supply gas by driving the bar dry pump 170. Out of the gas supplied by the spheres 132a, 132b, and 132c, the gas and / or bi-products outside the corresponding spatial division region of the substrate may be exhausted.

The second type gas supply units 130a, 130b, and 130c respectively provide a single gas corresponding to each divided region of the substrate S when the atomic layer deposition mode is a space division atomic layer deposition mode. can do. For example, the second type gas supply units 130a and 130c may provide a reaction gas to the substrate S, and the second type gas supply unit 130b may provide a source gas to the substrate S. have.

The second type gas supply units 130a, 130b, and 130c may not perform a gas supply when the atomic layer deposition mode is a time division atomic layer deposition mode.

According to an embodiment of the present disclosure, the second type gas supply units 130a, 130b, and 130c may receive gas from a corresponding external gas source to implement the spatial division atomic layer deposition mode. For example, the second type gas supply units 130a and 130c may receive a reaction gas from the reaction gas source 160. In addition, the second type gas supply unit 130b may receive a source gas from the source gas supply source 140. Alternatively, a gas supply source for supplying gas to the second type gas supply units 130a, 130b, and 130c may be provided inside each gas supply unit.

The atomic layer deposition apparatus gas module according to an embodiment of the present invention has been described above with reference to FIG. 1. The atomic layer deposition apparatus according to an embodiment of the present invention, in addition to the above-described atomic layer deposition equipment gas module, a control unit for controlling each configuration of the atomic layer deposition equipment gas module, a chamber for providing an atomic layer deposition reaction space and the It may further include a chamber pump for controlling the pressure in the chamber.

More specifically, the control unit, in the time-division atomic layer deposition mode, the source gas, the purge gas, and the reaction gas through the at least two first type gas supply unit (110a, 110b) sequentially the substrate ( It can be controlled to provide toward S).

The control unit may provide the purge gas through the at least two first type gas supply units 110a and 110b in the space division atomic layer deposition mode, and the at least three second type gas supply units 130a, The source gas and the reaction gas may be simultaneously provided through 130b and 130c. In particular, the controller controls the bar dry pump 170 to prevent mixing of the source gas and the reactant gas provided through the second type gas supply units 130a, 130b, and 130c, thereby providing excessive gas. Can be exhausted.

In addition, the controller may transfer the substrate S as necessary. Detailed description of the substrate transfer will be described later.

Hereinafter, an atomic layer deposition method according to an embodiment of the present invention will be described with reference to FIG. 2.

2 is a flowchart illustrating an atomic layer deposition method according to an embodiment of the present invention. The atomic layer deposition method according to an embodiment of the present invention, which will be described below with reference to FIG. 2, may be applied to an atomic layer deposition apparatus gas module and / or an atomic layer deposition apparatus according to an embodiment of the present invention described with reference to FIG. 1. Of course, it can be implemented by.

Referring to FIG. 2, in the atomic layer deposition method according to an embodiment of the present invention, source gas, purge gas, reactive gas, and purge gas are sequentially provided from a gas module to deposit a seed atomic layer on a surface of a substrate. On the time-division atomic layer deposition step (S100) and the seed atomic layer, the source gas, the purge gas, the reaction gas, and the purge gas are simultaneously provided for each divided region of the substrate through the gas module, and the subsequent atomic layer It may be made, including the spatial division atomic layer deposition step (S110) for depositing. Hereinafter, each step will be described in detail.

Step S100

In step S100, a time division atomic layer deposition step may be performed. In order to describe step S100 in detail, reference is made to FIGS. 3 and 4 together. 3 is a view for explaining in detail step S100 according to an embodiment of the present invention, Figure 4 is another view for explaining step S100 according to an embodiment of the present invention in detail.

As a preliminary operation, the control unit may lower the pressure in the chamber to a desired level through a chamber pump. For example, the pressure inside the chamber may be maintained at a level of 10-3 torr.

For time-division atomic layer deposition, the control unit may control the gas supply units 110a, 110b, 130a, 130b, and 130c as shown in FIG. 4. That is, the controller controls the source gas, the purge gas, the reactive gas, through the first type gas supply units 110a and 110b while stopping the gas supply through the second type gas supply units 130a, 130b, and 130c. The purge gas may be sequentially sprayed toward the substrate S during the periods t1, t2, t3, and t4.

As a result, a seed atomic layer may be formed on the substrate S.

Step S110

In step S110, a spatial division atomic layer deposition step may be performed. In order to describe step S110 in detail, reference is made to FIGS. 5 and 6 together. 5 is a view for explaining step S110 in detail according to an embodiment of the present invention, Figure 6 is another view for explaining step S110 in detail according to an embodiment of the present invention.

The controller may perform a spatial division atomic layer deposition mode on the substrate on which the seed atomic layer is deposited. When performing the spatial division atomic layer deposition mode, the substrate S is virtually divided according to the widths of the gas supply units 130a, 110a, 130b, 110b and 130c of the gas module 100, as shown in FIG. 5. It can be divided into area units A1, A2, A3, A4 and A5.

The controller provides a reaction gas through the second type gas supply unit 130a and a purge gas through the first type gas supply unit 110a to perform the spatial division atomic layer deposition mode. The source gas may be provided through the gas supply unit 130b, the purge gas may be provided through the first type gas supply unit 110b, and the reaction gas may be provided through the second type gas supply unit 130c. In this case, the controller may control the source gas, the purge gas, and the reaction gas to be injected at the same time.

In addition, the control unit drives the bar dry pump 170 to provide a reaction gas through the second type gas supply units 130a and 130c, specifically, through the gas supply ports 132a and 132c, and at the same time, an exhaust port ( The reaction gas can be exhausted through the 134a and 136a and the exhaust ports 134c and 136c. In addition, the control unit may provide a source gas through the second type gas supply unit 130b, specifically, a gas supply port 132b, and exhaust the source gas through the exhaust ports 134b and 136b. Thereby, in the space division atomic layer deposition step, it is possible to suppress the occurrence of the reaction that occurs as the source gas and the reaction gas penetrate into the unintended partition region.

In addition, the controller may control the substrate S to be transferred in units of the divided area from the outside of the gas module 100. If the substrate S is transferred in the right direction, the A5 divided area of the substrate S is first transferred under the gas module 100, so that the A5 divided area is below the second type gas supply 130a. It is located at. Subsequently, the controller transfers the substrate in units of divided regions, whereby an A5 divided region of the substrate S is positioned below the first type gas supply unit 110b, and a newly divided A4 divided region is the second type. It is located below the gas supply unit 130a. Thereafter, the controller transfers the substrate in units of divided regions so that the A5 divided region is positioned below the second type gas supply unit 130b, and the A4 divided region is positioned below the first type gas supply unit 110a. In addition, the A3 partition area is newly positioned below the second type gas supply part 130a. In this manner, the controller continuously transfers the substrate S in one direction (the right direction of the drawing) in units of divided regions, and then transfers the substrate S in the opposite direction (the left direction of the drawing).

Accordingly, as shown in FIG. 5, when all of the substrate S enters under the gas module 100, the A1 partition area of the substrate S may be the second type gas supply unit ( 130a), the reactive gas is supplied from the first type gas supply unit 110a, and the A2 divided area is provided with the source gas from the second type gas supply unit 130b. The division region A4 may receive a purge gas from the first type gas supply unit 110b, and the division region A5 may receive a reaction gas from the second type gas supply unit 130b.

Therefore, in the space-division atomic layer deposition step, the substrate S is relatively transferred to the gas module 100, so that a subsequent atomic layer may be deposited as shown in FIG. 5.

The atomic layer deposition method according to an embodiment of the present invention has been described above with reference to FIGS. 2 to 6. According to one embodiment of the present invention described above, a seed atomic layer may be formed through a time division atomic layer deposition step, and a subsequent atomic layer may be formed on a seed atomic layer through a space division atomic layer deposition step. Accordingly, the seed atomic layer can provide excellent heterogeneous deposition properties between the interface with the substrate, and then subsequent atomic layers can be deposited at a fast deposition rate on the seed atomic layer to provide high quality thin film layers while providing productivity. Can be improved.

In particular, the time division atomic layer deposition step and the space division atomic layer deposition step may be performed with the same gas module. That is, by controlling the gas supply order of the gas module, the controller can implement the time division and space division atomic layer deposition step without an additional gas module, thereby simplifying the equipment.

7 is a view for explaining another implementation method of step S110 according to an embodiment of the present invention. An embodiment to be described with reference to FIG. 7 may also be implemented by an atomic layer deposition apparatus gas module and / or atomic layer deposition apparatus according to an embodiment of the present invention described with reference to FIG. 1.

In the spatially divided atomic layer deposition step according to step S110, starting at a position where at least a portion of the substrate overlaps with the gas module 100 may be transferred in units of the divided regions. That is, in step S110, at least a portion of the substrate S may be started under the gas module 100 to be transferred in units of the divided regions.

Referring to FIG. 7, the spatial division atomic layer deposition step may be performed while the divided regions A3, A4, and A5 of the substrate S are positioned under the gas module 100. That is, in the embodiment described with reference to FIGS. 5 and 6, while the substrate S first enters under the gas module 100, the spatial division atomic layer deposition step is performed (full scan). In the example, the spatial division atomic layer deposition step is performed in a state where the substrate S is placed under the gas module 100 before the spatial division atomic layer deposition step is performed in advance.

According to the exemplary embodiment shown in FIG. 7, during the initial time t1, the divided areas A1 and A2 of the substrate S are positioned in a rest period not receiving gas, and the divided areas A3, A4, and A5 supply gas. It may be located in the receiving deposition section. Accordingly, the A3 divided region receives the reaction gas through the second type gas supply unit 130a, the A4 divided region receives the purge gas through the first type gas supply unit 110a, and the A5 divided region Source gas may be provided through the second type gas supply unit 130b. At this time, as described above, the exhaust ports 134a and 136a exhaust the reaction gas, and the exhaust ports 134b and 136b exhaust the source gas.

After t1 time and for t2 time, the controller may transfer the substrate S in divided regions. Accordingly, the A1 divided region is located in the idle section, the A2 divided region receives the reaction gas through the second type gas supply unit 130a, and the A3 divided region provides the purge gas through the first type gas supply unit 110a. In response, the A4 divided region may receive the source gas through the second type gas supply unit 130b, and the A5 divided region may receive the purge gas through the first type gas supply unit 110b.

After t3 hours, the A1 partition is provided with the reactant gas, the A2 partition is provided with the purge gas, the A3 partition is provided with the source gas, the A4 partition is provided with the purge gas, and the A5 partition is reacted. Gas may be provided.

Subsequently, during the period t4, A1, A2, A3, and A4 divided regions may receive corresponding gas from the gas module 100, and the A5 divided regions may be located in the idle section.

After the t5 time, the divided areas A1, A2, and A3 may receive the corresponding gas from the gas module 100, and the divided areas A4 and A5 may be located in the idle section.

After t6 to t9 hours, the control unit may transfer the substrate in the opposite direction to perform the spatial division atomic layer deposition step.

As a result, a subsequent atomic layer may be formed on the substrate.

According to the embodiment of the present invention described with reference to FIG. 7, the step of space-division atomic layer deposition may be performed after at least a portion of the substrate enters under the gas module, thereby reducing the foot print of the equipment. . That is, according to the present exemplary embodiment, the space dividing atomic layer deposition mode may be performed as long as spaces corresponding to the two sized divided regions are provided as the idle sections on the left and right sides of the gas module. Thus, according to the present embodiment, since the size of the equipment can be reduced while performing the spatial division atomic layer deposition step, it is possible to provide an effect of improving the convenience of depositing a large substrate.

In addition, although the embodiment described with reference to FIG. 7 has been described with reference to being performed after step S100 of FIG. 2, it may be performed in a state where step S100 is omitted. In this case, the space dividing atomic layer deposition step can be performed directly on the substrate while the size of the equipment for the space dividing atomic layer deposition is downsized.

The embodiments of the present invention described with reference to FIGS. 1 to 7 can produce a high quality thin film layer in a short time, and the thin film layer can be applied to at least an optical / display device, a semiconductor device, an energy device, and the like.

As mentioned above, although this invention was demonstrated in detail using the preferable embodiment, the scope of the present invention is not limited to a specific embodiment, Comprising: It should be interpreted by the attached Claim. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

Claims (18)

1. A first type gas supply unit configured to sequentially provide a plurality of gases or provide a single gas toward the substrate according to the atomic layer deposition mode; And

   And a plurality of second type gas supply parts disposed at both ends in the direction of the substrate with respect to the first type gas supply part to provide a single gas.
2. According to claim 1,

   When the atomic layer deposition mode is a time division atomic layer deposition mode, the first type gas supply unit provides a plurality of gases sequentially toward the substrate, and the atomic layer deposition mode is a space division atomic layer deposition mode. And the first type gas supply unit provides a single gas toward the substrate.
3. The method of claim 2,

   And the first type gas supplier provides a purge gas and the second type gas supplies provide a source gas and a reactant gas, respectively.
4. According to claim 1,

   The second type gas supply unit further comprises a gas supply port and an exhaust port provided on both sides of the gas supply unit to prevent mixing of the gas.
5. A gas module for providing a source gas, a purge gas, and a reactant gas sequentially or simultaneously toward the substrate; And

   After the time-division atomic layer deposition mode in which the source gas, the purge gas, and the reactive gas are sequentially provided toward the substrate to form a seed atomic layer, the source gas, the purge gas, and the reactive gas are simultaneously divided into regions of the substrate. And a controller configured to perform a space division atomic layer deposition mode to provide a corresponding atomic layer on the seed atomic layer.
6. The method of claim 5,

   The gas module includes at least two first type gas supplies and at least three second type gas supplies arranged alternately with the at least two first type gas supplies.
7. The method of claim 6,

   The control unit, in the time-division atomic layer deposition mode, the source gas, the purge gas, and the reactive gas through the at least two first type gas supply unit to sequentially supply toward the substrate.
8. The method of claim 6,

   The control unit may provide the purge gas through the at least two first type gas supply units in the space division atomic layer deposition mode, and supply the source gas and the reaction gas through the at least three second type gas supply units. At the same time providing atomic layer deposition equipment.
9. The method of claim 6,

   The second type gas supply unit, the atomic layer deposition equipment further comprises an exhaust port for preventing the mixing of the gas.
10. The method of claim 9,

    The control unit, in the space division atomic layer deposition mode, provides the source gas and the reaction gas toward the substrate through the at least three second type gas supply units, and sprays the substrate through the exhaust port. And exhausting said source gas and said reactive gas to prevent mixing of gases.
11. The method of claim 6,

    And the at least two first type gas supply units and the at least three second type gas supply units selectively receive a gas to be injected according to the time division atomic layer deposition mode or the space division atomic layer deposition mode.
12. The method of claim 5,

    The control unit, the atomic layer deposition equipment for transferring the substrate in the divided region, in the divided atomic layer deposition mode.
13. The method of claim 12,

    The control unit, in the spatial division atomic layer deposition mode, the atomic layer deposition equipment for transferring the substrate in the divided region unit starting at a position overlapping with the gas module.
14. The method of claim 13,

    And the control unit transfers the substrate in the first direction in the divided region unit and then transfers the substrate in a second direction opposite to the first direction.
15. A time division atomic layer deposition step of sequentially providing a source gas, a purge gas, a reaction gas, and a purge gas from the gas module to deposit a seed atomic layer on the surface of the substrate; And

    A spatially divided atomic layer deposition step of depositing a subsequent atomic layer on the seed atomic layer by simultaneously providing the source gas, the purge gas, the reaction gas, and the purge gas for each divided region of the substrate through the gas module; Atomic layer deposition method comprising a.
16. The method of claim 15,

    During the spatial division atomic layer deposition step, the substrate is moved in units of divided regions of the substrate.
17. The method of claim 16,

    During the spatial division atomic layer deposition step, the substrate is moved in units of divided regions of the substrate, starting at a position overlapping with the gas module.
18. The method of claim 17,

    And the substrate is moved in a first direction and in a second direction opposite to the first direction.

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