WO2016010185A1

WO2016010185A1 - Thin film deposition apparatus and method

Info

Publication number: WO2016010185A1
Application number: PCT/KR2014/007152
Authority: WO
Inventors: 서상준; 박화선; 정호균; 조성민; 유지범
Original assignee: 성균관대학교산학협력단
Priority date: 2014-07-16
Filing date: 2014-08-04
Publication date: 2016-01-21
Also published as: KR101491762B1; CN105473761B; CN105473761A

Abstract

The present invention relates to a thin film deposition apparatus comprising: a substrate loading unit on which a substrate is loaded; a substrate carrying unit coupled to the substrate loading unit to alternately move the substrate; and a thin film deposition unit for depositing a thin film on the substrate. Here, the thin film deposition unit comprises: a plurality of plasma modules; and an isolation part for connecting or blocking spaces under plasma generation modules adjacent to each other by being arranged between the plasma modules or through a descending operation, wherein the substrate carrying unit alternately moves the substrate loading unit, thereby depositing a thin film on the substrate.

Description

Thin film deposition apparatus and method

The present invention relates to a thin film deposition apparatus and method.

The compound thin film is a separator between gate dielectrics or metals such as semiconductor devices and integrated circuits, compound semiconductors, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes (OLEDs), In addition, it is widely used as a protective film to protect various passivation and chemical reactions from the surroundings. In recent years, as the size of a semiconductor integrated device becomes smaller and the shape becomes more complicated, the technique which can apply | coat a compound thin film of uniform thin thickness which has a high level | step difference structure becomes important.

Atomic layer deposition (ALD), thermal chemical vapor deposition (TCVD) and plasma enhanced chemical vapor deposition (PECVD) are widely used as a method of depositing a thin film.

Atomic layer deposition (ALD) uses chemical vapor deposition, but injects precursors and reactants by time division. Therefore, the thickness of the thin film can be precisely controlled by suppressing the gas phase reaction and inducing a self-limited reaction occurring at the surface of the substrate. Atomic layer thin film deposition can control the thickness in atomic units. Therefore, the thin film can be uniformly formed not only in the capacitor having a large step difference but also in the inner space of the fiber having a large surface area and the complex structure, the surface of the particulate structure, and the like. In addition, since the gas-phase reaction is minimized, the pinhole density is very low, the thin film density is high, and the deposition temperature is reduced.

However, the atomic layer deposition method is difficult to select appropriate precursors and reactants, and the deposition rate is very slow because the thickness of the thin film deposited per cycle is deposited in the atomic layer or less. In addition, there is a problem that the characteristics of the thin film is significantly reduced by the excess carbon and hydrogen.

On the other hand, the deposition of silicon compound thin films using Thermal Chemical Vapor Deposition (TCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) is much faster than the atomic layer deposition method. However, there are many pinholes in the thin film, and problems such as by-products and particle generation may occur. Therefore, the thin film is produced at a high temperature, and it is difficult to apply to a substrate such as a plastic film.

In this regard, Korean Patent No. 10-1200372 (Invention name: thin film manufacturing apparatus and thin film deposition method using the same) includes a reaction chamber, a substrate support disposed in the reaction chamber, on which a wafer is placed, a source gas, a purge gas, Thin film including gas injection means for injecting the reaction gas activated by the plasma, gas supply means for supplying the source gas, purge gas and the reaction gas to the gas injection means, and a plasma power supply for supplying power for plasma generation A manufacturing apparatus and a thin film deposition method using the same are disclosed.

The present invention is to solve the above-mentioned problems of the prior art, and provides a thin film deposition apparatus and method capable of forming a thin film used in semiconductors and displays at low temperatures.

However, the technical problem to be achieved by the present embodiment is not limited to the technical problems as described above, and other technical problems may exist.

As a technical means for achieving the above technical problem, a thin film thin film deposition apparatus according to an aspect of the present invention is coupled to the substrate loading unit, the substrate loading unit is loaded substrate, the substrate transport unit to alternately move the substrate, and on the substrate It includes a thin film deposition unit for depositing a thin film. In this case, the thin film deposition unit includes a plurality of plasma modules, and is disposed between the respective plasma modules or includes an isolation unit for connecting or blocking the spaces below the adjacent plasma generation module by an operation of descending, the substrate transport unit substrate loading The parts are alternately moved to deposit a thin film on the substrate.

According to another aspect of the present invention, a method of depositing a thin film includes: disposing a substrate in a thin film deposition apparatus including a thin film deposition unit in which at least one plasma module generating a source plasma and at least one plasma module generating a reactive plasma are arranged to cross each other; Placing the substrate under the first plasma module and the second plasma module adjacent to each other, and forming a first thin film using the source plasma and the reactive plasma, and the substrate below the second plasma module and the third plasma module adjacent to each other. And forming a second thin film using the source plasma and the reactive plasma. In this case, the forming of the first thin film may connect the space under the first plasma module and the space under the second plasma module, and block the space under the first plasma module and the space under the second plasma module from the external space. The forming of the second thin film may include connecting the space under the second plasma module and the space under the third plasma module, and blocking the space under the second plasma module and the space under the third plasma module from the external space. To deposit a thin film.

According to any one of the above-described problem solving means of the present invention, in the thin film deposition method using chemical vapor deposition (CVD), using a scanning method, by separating the source plasma and the reactive plasma on the substrate By injecting, the thin film deposition process time can be reduced while improving the characteristics of the thin film.

In addition, it is possible to form a multilayer thin film on a flexible substrate by enabling a low temperature deposition process.

1 is a view showing the structure of a thin film deposition apparatus according to an embodiment of the present invention.

2 is a block diagram of a thin film deposition unit of the thin film deposition apparatus according to an embodiment of the present invention.

3A is a diagram illustrating a case in which a substrate is in a first position in a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.

3B is a diagram illustrating a case in which a substrate is in a second position in a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.

4 is a flowchart illustrating a thin film deposition method of a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.

5 is a view showing an example of a thin film deposition result deposited by the thin film deposition method of the thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is "connected" to another part, this includes not only "directly connected" but also "electrically connected" with another element in between. . In addition, when a part is said to "include" a certain component, which means that it may further include other components, except to exclude other components unless otherwise stated.

Hereinafter, a thin film deposition apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Throughout this specification, when a member is located “on” another member, this includes not only when one member is in contact with another member but also when another member exists between the two members.

As used throughout this specification, the terms “about”, “substantially”, and the like, are used at, or in close proximity to, numerical values when manufacturing and material tolerances inherent in the meanings indicated are provided, and an understanding of the present application may occur. Accurate or absolute figures are used to assist in the prevention of unfair use by unscrupulous infringers. As used throughout this specification, the term “step of” or “step of” does not mean “step for”.

Throughout this specification, the term “combination of these” included in the expression of the mark of the makushi means one or more mixtures or combinations selected from the group consisting of the elements described in the mark of the mark of makushi, wherein the constituents It means to include one or more selected from the group consisting of.

Referring to FIG. 1, a thin film deposition apparatus according to an exemplary embodiment of the present invention includes a substrate loading unit 100, a substrate transporting unit 200, a substrate heater 300, and a thin film deposition unit 400.

First, in one embodiment of the present invention, the substrate 10 to be deposited on the substrate loading unit 100 may be loaded. The substrate is generally used for a semiconductor device, glass, quartz, silicon (Si), germanium (Ge) and the like can be used. Alternatively, the substrate may include, but is not limited to, a polyethersulfone (PES), a polyimide (PI), polyethylene naphthalate (PEN), or the like as a substrate including a polymer.

Subsequently, the substrate transporting unit 200 is coupled to the substrate loading unit 100 and serves to move the substrate 10. In this case, the moving direction of the substrate 10 may be alternately moving or rotating in a linear or nonlinear path, but is not limited thereto.

In one embodiment of the invention, the substrate heater 300 adjusts the temperature of the substrate 10. When a thin film is deposited on the surface of the substrate, the substrate heater 300 keeps the substrate 10 below the pyrolysis temperature of the precursor. The pyrolysis temperature of the precursor varies with the precursor, but most precursors adsorb more onto the substrate 10 at lower temperatures of the substrate 10 and usually have a pyrolysis temperature of about 100 ° C. to about 700 ° C. However, in the case of thin film deposition for semiconductor devices, a temperature of about 400 ° C. or less is preferable to reduce the diffusion of impurities in the substrate. The temperature of the substrate 10 controlled by the substrate heater 300 may be 0 ° C to 400 ° C, or about 100 ° C to about 200 ° C, or about 100 ° C to about 160 ° C. It is not limited. That is, the thin film manufacturing apparatus according to an embodiment of the present invention can adjust the temperature of the substrate between 0 to 400 degrees.

In one embodiment of the present invention, if at least one of the reaction plasma and the source plasma is supplied on the substrate 10 by the plasma generation module, the derivative generated by at least one of the reaction plasma and the source plasma The thin film may be formed by forming a thin film material by physical or chemical reaction on the surface, but is not limited thereto. At this time, in the process of forming a thin film material and thin film deposition, it may be that the appropriate temperature is maintained by the substrate heater 300. When the reactive plasma or the source plasma is injected onto the substrate 10, the substrate heater 300 adjusts the temperature to chemically react the reactive plasma or the source plasma to deposit an organic thin film or an inorganic thin film on the substrate 10.

Next, in one embodiment of the present invention, the thin film deposition unit 400 may be disposed on a plurality of plasma modules for atomic layer deposition on the moving substrate (10). In this case, each plasma module may be spatially separated by an isolation unit. Each plasma module may include an electrode for generating a plasma, and may include any one of a source gas and a reaction gas, but is not limited thereto. Each plasma module maintains a source gas or reaction gas in a plasma state and can be deposited on the substrate for a short time of several milliseconds (msec) or several seconds (sec) to deposit a thin film on the substrate. In this case, the source gas may include a precursor and an inert gas, but is not limited thereto. For example, the inert gas may be argon (Ar) gas. Here, the precursor refers to a material before the specific material finally obtained in a chemical reaction or the like. In addition, a specific substance includes all substances such as metals and ions, and does not necessarily need to be the last substance of a reaction, and refers to a substance that can be obtained at any predetermined stage. For example, the precursor may be silane (SiH 4), TEOS, but is not limited thereto. In addition, the reaction gas may include, but is not limited to, nitrogen (N), hydrogen (H), ammonia (NH 3), and oxygen (O).

In addition, although not shown, the thin film deposition apparatus according to an embodiment of the present invention may be configured to include a control unit. In this case, the control unit is combined with the components of each of the thin film deposition apparatus to control the conditions required for thin film deposition. The control unit may be combined with the substrate loading unit, the substrate transport unit, the substrate heater, the thin film deposition unit, and the isolation unit of the thin film deposition apparatus according to an embodiment of the present invention to control thin film deposition conditions, but is not limited thereto. The controller may improve characteristics of the thin film by modifying a process of forming the thin film. For example, the controller may control the injection time, the intensity, the wavelength, the duty cycle of the reactive plasma or the source plasma during thin film deposition.

Referring to FIG. 2, the thin film deposition unit 400 according to an embodiment of the present invention includes a plurality of plasma generating modules including a first plasma module 410 and a second plasma module 420, each of which may include a plurality of plasma generating modules. It may be configured to include an isolation unit 450 between the plasma modules. Each plasma module may comprise a source gas or a reactant gas. In addition, the source gas or the reactant gas may be injected onto the substrate 10 in a plasma state for a short time and then exhausted.

The thin film deposition unit 400 according to an exemplary embodiment of the present invention may be configured in a state in which a plasma module including a plurality of source gases or a plasma module including a reactive gas are crossed and arranged. For example, when the thin film deposition unit 400 includes a plurality of plasma modules including a first plasma module 410 for generating a source plasma and a second plasma module 420 for generating a reactive plasma, a third plasma may be used. The module generates a source plasma and the fourth plasma module generates a reactive plasma. In this case, the source gas may include a precursor made of an inorganic material or a precursor made of an organic material. Accordingly, it is possible to form an organic-inorganic hybrid thin film by alternately depositing an inorganic thin film and an organic thin film using one thin film deposition apparatus.

For example, when the substrate transporter is positioned under the second plasma module 420 and the third plasma module, the substrate transporter may raise the isolation unit 450 located between the second plasma module 420 and the third plasma module to raise the isolation unit 450. The space below the second plasma module and the space below the third plasma module may be connected. Subsequently, by injecting the reactive plasma and the source plasma, the source plasma and the reactive plasma may be reacted on the substrate to produce an effect such as depositing a thin film. At this time, the isolation unit 450 located between the first plasma module 410 and the second plasma module 420 and the isolation unit 450 located between the third plasma module and the fourth plasma module are lowered to lower the second plasma. The space under the module 420 and the space under the third plasma module are blocked from the external space. In addition, in the case of the plasma module located at both ends, it can be blocked by the external space and the partition wall.

3A is a diagram illustrating a case in which a substrate is in a first position 202 in a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.

3B is a diagram illustrating a case in which the substrate is in the second position 204 in the thin film deposition apparatus including the three plasma modules according to the exemplary embodiment of the present invention.

3A and 3B, the thin film deposition apparatus according to the exemplary embodiment of the present invention may include three plasma modules, but is not limited thereto. In this case, the first plasma module 410, the second plasma module 420, and the third plasma module 430 may include a reactive gas or a source gas, and inject a plasma gas onto the substrate 10 for a short time. Can be exhausted. For example, the first plasma module 410, the second plasma module 420, and the third plasma module 430 each include a reactant gas, a source gas, a reactant gas or a source gas, a reactant gas, and a source gas. There may be. In addition, the reaction plasma module and the source plasma module may be paired and injected onto the substrate 10 during thin film deposition, but the present invention is not limited thereto.

In addition, the first isolator 452 is mounted between the first plasma module 410 and the second plasma module 420 and the second isolation is between the second plasma module 420 and the third plasma module 430. The unit 454 may be mounted.

As shown in FIG. 3A, when the substrate transport unit 200 is positioned below the first position 202, that is, the first plasma module 410 and the second plasma module 420, the first plasma module ( The first isolation part 452 located between the 410 and the second plasma module 420 is raised to connect the space under the first plasma module 410 and the space under the second plasma module 420 to deposit a thin film. It is possible to let. At this time, the second isolating portion 454 positioned on the other side of the first plasma module 410 or the other side 420 of the second plasma module is lowered to lower the space below the first plasma module 410 and the second plasma module. The space below the bottom is blocked from the outside space. On the other hand, as shown in the figure, the outer wall of the thin film deposition portion may be provided on the other side of the first plasma module 410.

Similarly, as shown in FIG. 3B, when the substrate transport unit 200 is located under the second position 204, that is, under the second plasma module 420 and the third plasma module 430, the second plasma is disposed. The second isolation unit 454 located between the module 420 and the third plasma module 430 is raised to connect the space under the second plasma module 420 and the space under the third plasma module 430 to form a thin film. It is possible to deposit it. At this time, the first isolating portion 452 located on the other side of the second plasma module 420 or the other side 430 of the third plasma module is lowered to lower the space of the second plasma module 420 and the third plasma module. 430 blocks the space below the external space. On the other hand, as shown in the figure, the outer wall of the thin film deposition portion may be provided on the other side of the third plasma module 410.

3A, 3B, and 4, a thin film deposition method of a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention will be described in detail.

3A and 3B, the thin film deposition apparatus according to the exemplary embodiment of the present invention may include a source gas and a reactive gas in the first plasma module 410, the second plasma module 420, and the third plasma module 430, respectively. It may be configured to include a source gas. In this case, the source gas may include a precursor and an inert gas. For example, a source gas including an organic precursor may be included in the first plasma module 410, and a source gas containing an inorganic precursor may be included in the third plasma module 430. It may be provided.

Subsequently, referring to FIG. 4, the thin film deposition method using the thin film deposition apparatus according to an embodiment of the present invention may include: fixing the substrate to the first position (S110); Source gas and reactant gas are injected to form a first thin film (S120); Fixing the substrate to the second position (s120); A source gas and a reaction gas are injected to form a second thin film (S140).

First, in the step (s110) of fixing the substrate to the first position, the substrate 10 is mounted on the substrate loading part 100 and positioned at the first position 202 by the substrate transporting part 200. When the substrate 10 is fixed at the first position 202, the first isolator 452 located between the first plasma module 410 and the second plasma module 420 is raised to raise the first plasma module 410. The space below and the space below the second plasma module 420 may be connected. Subsequently, the second isolating portion 454 located on the other side of the first plasma module 410 or the other side 420 of the second plasma module is lowered to lower the space below the first plasma module 410 and the second plasma module. The space below the bottom is blocked from the outside space.

In addition, the first plasma module 410 and the second plasma module 420 may inject and exhaust the source plasma and the reactive plasma including the organic precursor on the substrate 10 for a short time, respectively. Accordingly, the source plasma and the reaction plasma including the organic precursor are reacted on the substrate 10 to form a first organic thin film (S120). In this case, the organic thin film may be formed through radical polymerization by converting an organic monomer into a radical in a plasma, but is not limited thereto. At this time, the organic monomer may include one consisting of HMDSO (hexamethyl disiloxane), furan (1,4-epoxy-1,3-butadiene, furan), nucleic acids, and combinations thereof.

Subsequently, in the step of fixing the substrate to the second position (S130), the substrate 10 is moved to the second position 204 by the substrate transport unit 200 to the substrate loading unit 100 and fixed.

When the substrate 10 is fixed at the second position 204, the second plasma module 420 is raised by raising the second isolation portion 454 located between the second plasma module 420 and the third plasma module 430. It is possible to deposit a thin film by connecting the space below and the space below the third plasma module 430. At this time, the first isolating portion 452 located on the other side of the second plasma module 420 or the other side 430 of the third plasma module is lowered to lower the space of the second plasma module 420 and the third plasma module. 430 blocks the space below the external space.

Subsequently, the source plasma and the reactive plasma including the inorganic precursor may be injected and exhausted onto the substrate 10 for a short time. Accordingly, the source plasma including the inorganic precursor and the reaction plasma react on the substrate 10 to form a second inorganic thin film (S140).

As the thin film deposition apparatus according to the embodiment of the present invention separates the source plasma from the reactive plasma, when the thin film is deposited, the formation reaction and thin film deposition of the thin film material may be induced to occur on the surface of the substrate 10. . For example, when depositing a thin film such as silicon nitride, a silicon compound, the by-products generated during the reaction are not directly reacted with the SiH 4 derivatives generated in the source plasma and the N 2 and NH 3 derivatives generated in the reaction plasma. ) And it is possible to eliminate the problem of UV damage.

At this time, the substrate heater 30 adjusts the temperature of the substrate 10 to below the thermal decomposition temperature of the precursor included in the source gas to induce a chemical reaction between the precursor and the reactant gas on the substrate 10.

In addition, although the thin film manufacturing apparatus according to an embodiment of the present invention is not shown, when the reaction plasma or the source plasma generation and injection into the chamber in the plasma module by the control unit, the injection time, intensity, wavelength, duty cycle of the plasma ( duty cycle). Thus, by modifying the formation process of the thin film by controlling the conditions required for thin film deposition, it is possible to improve the characteristics of the thin film. In particular, the reaction rate of the surface can be increased instantaneously by a short irradiation time, thereby maintaining the low substrate temperature can have the effect of instantaneously forming a high surface temperature of the substrate 10. Therefore, it is possible to form a thin film on a flexible substrate 10 such as polyethersulfone (PES), polyimide (PI), polyethylene naphthalate (PEN), etc., which has to perform a thin film deposition process at a low temperature. Do.

In addition, it is possible to form the organic thin film or the inorganic thin film in multiple layers by repeatedly performing the above-described forming of the first thin film or forming the second thin film a predetermined number of times.

As described above with reference to FIGS. 3A, 3B, and 4, in a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention, included in the source gas of the first plasma module and the third plasma module. By changing the constituent material of the precursor to be formed, it is possible to form the organic thin film 20 or the inorganic thin film 30 on the substrate 10. In addition, if the above-described step of forming the thin film is repeatedly performed a predetermined number of times, the organic thin film, the inorganic thin film, the organic thin film of different components and the inorganic thin film of different components are mixed and deposited to form a multilayer organic thin film inorganic thin film. This is possible.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

Claims

In the thin film deposition apparatus,

A substrate loading unit into which a substrate is loaded,

A substrate transport unit coupled to the substrate loading unit to alternately move the substrate, and

Including a thin film deposition unit for depositing a thin film on the substrate,

The thin film deposition unit includes a plurality of plasma modules, and is disposed between the respective plasma modules, and comprises an isolation unit for connecting or blocking the spaces below the adjacent plasma generation module through the operation of raising or lowering,

And the substrate transporting unit alternately moves the substrate loading unit to deposit a thin film on the substrate.
The method of claim 1,

And the plasma module generates a source plasma or a reactive plasma.
The method of claim 2,

The thin film deposition apparatus of claim 1, wherein the thin film deposition apparatus includes a source plasma and a reactive plasma in a state in which they cross each other.
The method of claim 2,

And the source plasma comprises a precursor plasma.
The method of claim 4, wherein

The precursor is a thin film deposition apparatus that is silicon (Si), titanium (Ti).
The method of claim 2,

The reaction plasma is a thin film deposition apparatus comprising any one of nitrogen (N), oxygen (O) and hydrogen (H) plasma.
The method of claim 1,

The thin film deposition unit

A first plasma module for generating a source plasma and a second plasma module for generating a reactive plasma,

When the substrate transport unit is located below the first plasma module and the second plasma module, the separation unit located between the first plasma module and the second plasma module is raised to raise the space under the first plasma module and the Connect the space under the second plasma module,

The thin film deposition apparatus of claim 1, wherein the isolation portion located on the other side of the first plasma module or the other side of the second plasma module is lowered to block the space under the first plasma module and the space under the second plasma module from the external space.
The method of claim 1,

The thin film deposition unit

A first plasma module for generating a source plasma, a second plasma module for generating a reactive plasma, a third plasma module for generating a source plasma, and a fourth plasma module for generating a reactive plasma,

When the substrate transport unit is positioned below the second plasma module and the third plasma module, the separation unit located between the second plasma module and the third plasma module is raised to raise the space under the second plasma module and the Connect the space under the third plasma module,

The isolation portion located between the first plasma module and the second plasma module and the isolation portion located between the third plasma module and the fourth plasma module are lowered to lower the space below the second plasma module and the lower portion of the third plasma module. Thin film deposition apparatus to block the space of the external space.
The method of claim 1,

The thin film deposition apparatus is a thin film deposition apparatus for depositing a thin film by using a chemical vapor deposition (Chemical Vapor Deosition) method or atomic layer deposition (Atomic Layer Deposition) method.
The method of claim 1,

The thin film deposition apparatus further comprises a substrate heater in the lower portion of the substrate transport.
In the thin film deposition method,

Disposing a substrate on a thin film deposition apparatus including a thin film deposition unit in which at least one plasma module generating a source plasma and at least one plasma module generating a reactive plasma are arranged to cross each other;

Disposing the substrate under the first plasma module and the second plasma module adjacent to each other, and forming a first thin film using the source plasma and the reactive plasma;

Disposing the substrate under the second plasma module and the third plasma module adjacent to each other, and forming a second thin film using the source plasma and the reactive plasma;

The forming of the first thin film may be performed by connecting the space under the first plasma module and the space under the second plasma module, and the space under the first plasma module and the space under the second plasma module may be separated from the external space. Block it,

The forming of the second thin film may be performed by connecting the space under the second plasma module and the space under the third plasma module, and the space under the second plasma module and the space under the third plasma module may be separated from the external space. Thin film deposition method to block.
The method of claim 11,

And repeatedly forming the first thin film and the second thin film by a predetermined number of times.