WO2016010185A1 - Appareil de dépôt en couche mince et procédé - Google Patents

Appareil de dépôt en couche mince et procédé Download PDF

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Publication number
WO2016010185A1
WO2016010185A1 PCT/KR2014/007152 KR2014007152W WO2016010185A1 WO 2016010185 A1 WO2016010185 A1 WO 2016010185A1 KR 2014007152 W KR2014007152 W KR 2014007152W WO 2016010185 A1 WO2016010185 A1 WO 2016010185A1
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WO
WIPO (PCT)
Prior art keywords
plasma
thin film
plasma module
module
substrate
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PCT/KR2014/007152
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English (en)
Korean (ko)
Inventor
서상준
박화선
정호균
조성민
유지범
Original Assignee
성균관대학교산학협력단
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Priority to CN201480023046.3A priority Critical patent/CN105473761B/zh
Publication of WO2016010185A1 publication Critical patent/WO2016010185A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

Definitions

  • the present invention relates to a thin film deposition apparatus and method.
  • the compound thin film is a separator between gate dielectrics or metals such as semiconductor devices and integrated circuits, compound semiconductors, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes (OLEDs), In addition, it is widely used as a protective film to protect various passivation and chemical reactions from the surroundings. In recent years, as the size of a semiconductor integrated device becomes smaller and the shape becomes more complicated, the technique which can apply
  • Atomic layer deposition ALD
  • thermal chemical vapor deposition TCVD
  • plasma enhanced chemical vapor deposition PECVD
  • Atomic layer deposition uses chemical vapor deposition, but injects precursors and reactants by time division. Therefore, the thickness of the thin film can be precisely controlled by suppressing the gas phase reaction and inducing a self-limited reaction occurring at the surface of the substrate. Atomic layer thin film deposition can control the thickness in atomic units. Therefore, the thin film can be uniformly formed not only in the capacitor having a large step difference but also in the inner space of the fiber having a large surface area and the complex structure, the surface of the particulate structure, and the like. In addition, since the gas-phase reaction is minimized, the pinhole density is very low, the thin film density is high, and the deposition temperature is reduced.
  • the atomic layer deposition method is difficult to select appropriate precursors and reactants, and the deposition rate is very slow because the thickness of the thin film deposited per cycle is deposited in the atomic layer or less.
  • the characteristics of the thin film is significantly reduced by the excess carbon and hydrogen.
  • the deposition of silicon compound thin films using Thermal Chemical Vapor Deposition (TCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) is much faster than the atomic layer deposition method.
  • TCVD Thermal Chemical Vapor Deposition
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the thin film is produced at a high temperature, and it is difficult to apply to a substrate such as a plastic film.
  • Korean Patent No. 10-1200372 (Invention name: thin film manufacturing apparatus and thin film deposition method using the same) includes a reaction chamber, a substrate support disposed in the reaction chamber, on which a wafer is placed, a source gas, a purge gas, Thin film including gas injection means for injecting the reaction gas activated by the plasma, gas supply means for supplying the source gas, purge gas and the reaction gas to the gas injection means, and a plasma power supply for supplying power for plasma generation
  • a reaction chamber a substrate support disposed in the reaction chamber, on which a wafer is placed
  • a source gas a purge gas
  • Thin film including gas injection means for injecting the reaction gas activated by the plasma
  • gas supply means for supplying the source gas, purge gas and the reaction gas to the gas injection means
  • a plasma power supply for supplying power for plasma generation
  • the present invention is to solve the above-mentioned problems of the prior art, and provides a thin film deposition apparatus and method capable of forming a thin film used in semiconductors and displays at low temperatures.
  • a thin film thin film deposition apparatus is coupled to the substrate loading unit, the substrate loading unit is loaded substrate, the substrate transport unit to alternately move the substrate, and on the substrate It includes a thin film deposition unit for depositing a thin film.
  • the thin film deposition unit includes a plurality of plasma modules, and is disposed between the respective plasma modules or includes an isolation unit for connecting or blocking the spaces below the adjacent plasma generation module by an operation of descending, the substrate transport unit substrate loading The parts are alternately moved to deposit a thin film on the substrate.
  • a method of depositing a thin film includes: disposing a substrate in a thin film deposition apparatus including a thin film deposition unit in which at least one plasma module generating a source plasma and at least one plasma module generating a reactive plasma are arranged to cross each other; Placing the substrate under the first plasma module and the second plasma module adjacent to each other, and forming a first thin film using the source plasma and the reactive plasma, and the substrate below the second plasma module and the third plasma module adjacent to each other. And forming a second thin film using the source plasma and the reactive plasma.
  • the forming of the first thin film may connect the space under the first plasma module and the space under the second plasma module, and block the space under the first plasma module and the space under the second plasma module from the external space.
  • the forming of the second thin film may include connecting the space under the second plasma module and the space under the third plasma module, and blocking the space under the second plasma module and the space under the third plasma module from the external space.
  • the thin film deposition method using chemical vapor deposition using a scanning method, by separating the source plasma and the reactive plasma on the substrate By injecting, the thin film deposition process time can be reduced while improving the characteristics of the thin film.
  • CVD chemical vapor deposition
  • FIG. 1 is a view showing the structure of a thin film deposition apparatus according to an embodiment of the present invention.
  • FIG. 2 is a block diagram of a thin film deposition unit of the thin film deposition apparatus according to an embodiment of the present invention.
  • 3A is a diagram illustrating a case in which a substrate is in a first position in a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.
  • 3B is a diagram illustrating a case in which a substrate is in a second position in a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.
  • FIG. 4 is a flowchart illustrating a thin film deposition method of a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.
  • FIG. 5 is a view showing an example of a thin film deposition result deposited by the thin film deposition method of the thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.
  • the term “combination of these” included in the expression of the mark of the makushi means one or more mixtures or combinations selected from the group consisting of the elements described in the mark of the mark of makushi, wherein the constituents It means to include one or more selected from the group consisting of.
  • FIG. 1 is a view showing the structure of a thin film deposition apparatus according to an embodiment of the present invention.
  • a thin film deposition apparatus includes a substrate loading unit 100, a substrate transporting unit 200, a substrate heater 300, and a thin film deposition unit 400.
  • the substrate 10 to be deposited on the substrate loading unit 100 may be loaded.
  • the substrate is generally used for a semiconductor device, glass, quartz, silicon (Si), germanium (Ge) and the like can be used.
  • the substrate may include, but is not limited to, a polyethersulfone (PES), a polyimide (PI), polyethylene naphthalate (PEN), or the like as a substrate including a polymer.
  • PES polyethersulfone
  • PI polyimide
  • PEN polyethylene naphthalate
  • the substrate transporting unit 200 is coupled to the substrate loading unit 100 and serves to move the substrate 10.
  • the moving direction of the substrate 10 may be alternately moving or rotating in a linear or nonlinear path, but is not limited thereto.
  • the substrate heater 300 adjusts the temperature of the substrate 10.
  • the substrate heater 300 keeps the substrate 10 below the pyrolysis temperature of the precursor.
  • the pyrolysis temperature of the precursor varies with the precursor, but most precursors adsorb more onto the substrate 10 at lower temperatures of the substrate 10 and usually have a pyrolysis temperature of about 100 ° C. to about 700 ° C.
  • a temperature of about 400 ° C. or less is preferable to reduce the diffusion of impurities in the substrate.
  • the temperature of the substrate 10 controlled by the substrate heater 300 may be 0 ° C to 400 ° C, or about 100 ° C to about 200 ° C, or about 100 ° C to about 160 ° C. It is not limited. That is, the thin film manufacturing apparatus according to an embodiment of the present invention can adjust the temperature of the substrate between 0 to 400 degrees.
  • the derivative generated by at least one of the reaction plasma and the source plasma may be supplied on the substrate 10 by the plasma generation module.
  • the thin film may be formed by forming a thin film material by physical or chemical reaction on the surface, but is not limited thereto.
  • the substrate heater 300 adjusts the temperature to chemically react the reactive plasma or the source plasma to deposit an organic thin film or an inorganic thin film on the substrate 10.
  • the thin film deposition unit 400 may be disposed on a plurality of plasma modules for atomic layer deposition on the moving substrate (10).
  • each plasma module may be spatially separated by an isolation unit.
  • Each plasma module may include an electrode for generating a plasma, and may include any one of a source gas and a reaction gas, but is not limited thereto.
  • Each plasma module maintains a source gas or reaction gas in a plasma state and can be deposited on the substrate for a short time of several milliseconds (msec) or several seconds (sec) to deposit a thin film on the substrate.
  • the source gas may include a precursor and an inert gas, but is not limited thereto.
  • the inert gas may be argon (Ar) gas.
  • the precursor refers to a material before the specific material finally obtained in a chemical reaction or the like.
  • a specific substance includes all substances such as metals and ions, and does not necessarily need to be the last substance of a reaction, and refers to a substance that can be obtained at any predetermined stage.
  • the precursor may be silane (SiH 4), TEOS, but is not limited thereto.
  • the reaction gas may include, but is not limited to, nitrogen (N), hydrogen (H), ammonia (NH 3), and oxygen (O).
  • the thin film deposition apparatus may be configured to include a control unit.
  • the control unit is combined with the components of each of the thin film deposition apparatus to control the conditions required for thin film deposition.
  • the control unit may be combined with the substrate loading unit, the substrate transport unit, the substrate heater, the thin film deposition unit, and the isolation unit of the thin film deposition apparatus according to an embodiment of the present invention to control thin film deposition conditions, but is not limited thereto.
  • the controller may improve characteristics of the thin film by modifying a process of forming the thin film. For example, the controller may control the injection time, the intensity, the wavelength, the duty cycle of the reactive plasma or the source plasma during thin film deposition.
  • FIG. 2 is a block diagram of a thin film deposition unit of the thin film deposition apparatus according to an embodiment of the present invention.
  • the thin film deposition unit 400 includes a plurality of plasma generating modules including a first plasma module 410 and a second plasma module 420, each of which may include a plurality of plasma generating modules. It may be configured to include an isolation unit 450 between the plasma modules.
  • Each plasma module may comprise a source gas or a reactant gas.
  • the source gas or the reactant gas may be injected onto the substrate 10 in a plasma state for a short time and then exhausted.
  • the thin film deposition unit 400 may be configured in a state in which a plasma module including a plurality of source gases or a plasma module including a reactive gas are crossed and arranged.
  • a plasma module including a plurality of source gases or a plasma module including a reactive gas are crossed and arranged.
  • a third plasma may be used.
  • the module generates a source plasma and the fourth plasma module generates a reactive plasma.
  • the source gas may include a precursor made of an inorganic material or a precursor made of an organic material. Accordingly, it is possible to form an organic-inorganic hybrid thin film by alternately depositing an inorganic thin film and an organic thin film using one thin film deposition apparatus.
  • the substrate transporter when the substrate transporter is positioned under the second plasma module 420 and the third plasma module, the substrate transporter may raise the isolation unit 450 located between the second plasma module 420 and the third plasma module to raise the isolation unit 450.
  • the space below the second plasma module and the space below the third plasma module may be connected.
  • the isolation unit 450 located between the first plasma module 410 and the second plasma module 420 and the isolation unit 450 located between the third plasma module and the fourth plasma module are lowered to lower the second plasma.
  • the space under the module 420 and the space under the third plasma module are blocked from the external space.
  • the plasma module located at both ends it can be blocked by the external space and the partition wall.
  • 3A is a diagram illustrating a case in which a substrate is in a first position 202 in a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.
  • 3B is a diagram illustrating a case in which the substrate is in the second position 204 in the thin film deposition apparatus including the three plasma modules according to the exemplary embodiment of the present invention.
  • the thin film deposition apparatus may include three plasma modules, but is not limited thereto.
  • the first plasma module 410, the second plasma module 420, and the third plasma module 430 may include a reactive gas or a source gas, and inject a plasma gas onto the substrate 10 for a short time. Can be exhausted.
  • the first plasma module 410, the second plasma module 420, and the third plasma module 430 each include a reactant gas, a source gas, a reactant gas or a source gas, a reactant gas, and a source gas. There may be.
  • the reaction plasma module and the source plasma module may be paired and injected onto the substrate 10 during thin film deposition, but the present invention is not limited thereto.
  • first isolator 452 is mounted between the first plasma module 410 and the second plasma module 420 and the second isolation is between the second plasma module 420 and the third plasma module 430.
  • the unit 454 may be mounted.
  • the first plasma module ( The first isolation part 452 located between the 410 and the second plasma module 420 is raised to connect the space under the first plasma module 410 and the space under the second plasma module 420 to deposit a thin film. It is possible to let.
  • the second isolating portion 454 positioned on the other side of the first plasma module 410 or the other side 420 of the second plasma module is lowered to lower the space below the first plasma module 410 and the second plasma module. The space below the bottom is blocked from the outside space.
  • the outer wall of the thin film deposition portion may be provided on the other side of the first plasma module 410.
  • the second plasma is disposed.
  • the second isolation unit 454 located between the module 420 and the third plasma module 430 is raised to connect the space under the second plasma module 420 and the space under the third plasma module 430 to form a thin film. It is possible to deposit it.
  • the first isolating portion 452 located on the other side of the second plasma module 420 or the other side 430 of the third plasma module is lowered to lower the space of the second plasma module 420 and the third plasma module.
  • 430 blocks the space below the external space.
  • the outer wall of the thin film deposition portion may be provided on the other side of the third plasma module 410.
  • FIG. 4 is a flowchart illustrating a thin film deposition method of a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.
  • the thin film deposition apparatus may include a source gas and a reactive gas in the first plasma module 410, the second plasma module 420, and the third plasma module 430, respectively. It may be configured to include a source gas.
  • the source gas may include a precursor and an inert gas.
  • a source gas including an organic precursor may be included in the first plasma module 410, and a source gas containing an inorganic precursor may be included in the third plasma module 430. It may be provided.
  • the thin film deposition method using the thin film deposition apparatus may include: fixing the substrate to the first position (S110); Source gas and reactant gas are injected to form a first thin film (S120); Fixing the substrate to the second position (s120); A source gas and a reaction gas are injected to form a second thin film (S140).
  • the substrate 10 is mounted on the substrate loading part 100 and positioned at the first position 202 by the substrate transporting part 200.
  • the first isolator 452 located between the first plasma module 410 and the second plasma module 420 is raised to raise the first plasma module 410.
  • the space below and the space below the second plasma module 420 may be connected.
  • the second isolating portion 454 located on the other side of the first plasma module 410 or the other side 420 of the second plasma module is lowered to lower the space below the first plasma module 410 and the second plasma module.
  • the space below the bottom is blocked from the outside space.
  • the first plasma module 410 and the second plasma module 420 may inject and exhaust the source plasma and the reactive plasma including the organic precursor on the substrate 10 for a short time, respectively. Accordingly, the source plasma and the reaction plasma including the organic precursor are reacted on the substrate 10 to form a first organic thin film (S120).
  • the organic thin film may be formed through radical polymerization by converting an organic monomer into a radical in a plasma, but is not limited thereto.
  • the organic monomer may include one consisting of HMDSO (hexamethyl disiloxane), furan (1,4-epoxy-1,3-butadiene, furan), nucleic acids, and combinations thereof.
  • the substrate 10 is moved to the second position 204 by the substrate transport unit 200 to the substrate loading unit 100 and fixed.
  • the second plasma module 420 is raised by raising the second isolation portion 454 located between the second plasma module 420 and the third plasma module 430. It is possible to deposit a thin film by connecting the space below and the space below the third plasma module 430. At this time, the first isolating portion 452 located on the other side of the second plasma module 420 or the other side 430 of the third plasma module is lowered to lower the space of the second plasma module 420 and the third plasma module. 430 blocks the space below the external space.
  • the source plasma and the reactive plasma including the inorganic precursor may be injected and exhausted onto the substrate 10 for a short time. Accordingly, the source plasma including the inorganic precursor and the reaction plasma react on the substrate 10 to form a second inorganic thin film (S140).
  • the thin film deposition apparatus separates the source plasma from the reactive plasma, when the thin film is deposited, the formation reaction and thin film deposition of the thin film material may be induced to occur on the surface of the substrate 10.
  • a thin film such as silicon nitride, a silicon compound
  • the by-products generated during the reaction are not directly reacted with the SiH 4 derivatives generated in the source plasma and the N 2 and NH 3 derivatives generated in the reaction plasma.
  • the substrate heater 30 adjusts the temperature of the substrate 10 to below the thermal decomposition temperature of the precursor included in the source gas to induce a chemical reaction between the precursor and the reactant gas on the substrate 10.
  • the thin film manufacturing apparatus when the reaction plasma or the source plasma generation and injection into the chamber in the plasma module by the control unit, the injection time, intensity, wavelength, duty cycle of the plasma ( duty cycle).
  • the reaction rate of the surface can be increased instantaneously by a short irradiation time, thereby maintaining the low substrate temperature can have the effect of instantaneously forming a high surface temperature of the substrate 10.
  • a thin film on a flexible substrate 10 such as polyethersulfone (PES), polyimide (PI), polyethylene naphthalate (PEN), etc., which has to perform a thin film deposition process at a low temperature.
  • PES polyethersulfone
  • PI polyimide
  • PEN polyethylene naphthalate
  • the organic thin film or the inorganic thin film in multiple layers by repeatedly performing the above-described forming of the first thin film or forming the second thin film a predetermined number of times.
  • FIG. 5 is a view showing an example of a thin film deposition result deposited by the thin film deposition method of the thin film deposition apparatus including three plasma modules according to an embodiment of the present invention.
  • a thin film deposition apparatus including three plasma modules according to an embodiment of the present invention, included in the source gas of the first plasma module and the third plasma module.
  • the constituent material of the precursor to be formed it is possible to form the organic thin film 20 or the inorganic thin film 30 on the substrate 10.
  • the above-described step of forming the thin film is repeatedly performed a predetermined number of times, the organic thin film, the inorganic thin film, the organic thin film of different components and the inorganic thin film of different components are mixed and deposited to form a multilayer organic thin film inorganic thin film. This is possible.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un appareil de dépôt en couche mince comprenant : une unité de chargement de substrat sur laquelle un substrat est chargé; une unité de portage de substrat couplée à l'unité de chargement de substrat pour déplacer en alternance le substrat; et une unité de dépôt en couche mince permettant de déposer une couche mince sur le substrat. Ici, l'unité de dépôt en couche mince comprend : une pluralité de modules de plasma; et une partie d'isolation pour connecter ou bloquer des espaces sous les modules de génération de plasma adjacents les uns aux autres en étant disposée entre les modules de plasma ou par l'intermédiaire d'une opération de descente, dans laquelle l'unité de portage du substrat déplace en alternance l'unité de chargement de substrat, ce qui permet de déposer une couche mince sur le substrat.
PCT/KR2014/007152 2014-07-16 2014-08-04 Appareil de dépôt en couche mince et procédé WO2016010185A1 (fr)

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CN201480023046.3A CN105473761B (zh) 2014-07-16 2014-08-04 用于薄膜沉积的装置和方法

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KR10-2014-0089854 2014-07-16
KR20140089854A KR101491762B1 (ko) 2014-07-16 2014-07-16 박막 증착 장치 및 방법

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KR101802384B1 (ko) * 2016-03-03 2017-11-28 임경철 증착 장치 및 방법
KR101926985B1 (ko) * 2016-06-28 2018-12-10 (주)아이씨디 고밀도 박막증착을 위한 증착장치
KR101932344B1 (ko) * 2016-06-28 2018-12-26 (주)아이씨디 고밀도 박막증착을 위한 플라즈마 소스의 배기구조

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KR20130078815A (ko) * 2011-12-30 2013-07-10 엘아이지에이디피 주식회사 플라즈마를 이용한 기판처리장치 및 기판처리방법
KR20130141409A (ko) * 2013-11-07 2013-12-26 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법

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