KR20140007623A - Linear source and deposition apparatus comprising the same - Google Patents

Linear source and deposition apparatus comprising the same Download PDF

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Publication number
KR20140007623A
KR20140007623A KR1020120074758A KR20120074758A KR20140007623A KR 20140007623 A KR20140007623 A KR 20140007623A KR 1020120074758 A KR1020120074758 A KR 1020120074758A KR 20120074758 A KR20120074758 A KR 20120074758A KR 20140007623 A KR20140007623 A KR 20140007623A
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KR
South Korea
Prior art keywords
pumping
gas injection
source
unit
injection unit
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KR1020120074758A
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Korean (ko)
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김병준
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김원구
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Priority to KR1020120074758A priority Critical patent/KR20140007623A/en
Publication of KR20140007623A publication Critical patent/KR20140007623A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a linear source and a deposition apparatus including the same, which comprise a source gas injection unit capable of injecting the source gas downward, a reaction gas injection unit capable of injecting the reaction gas downward, and a pump unit positioned between the source gas injection unit and the reaction gas injection unit, and having at least two pumping zones capable of pumping gas to outside, for a linear source and a deposition apparatus including the same in which the deposition speed is improved with a simple structure.

Description

Linear source and deposition apparatus comprising the same

The present invention relates to a linear source and a deposition apparatus having the same, and more particularly, to a linear source having a simple configuration and improved deposition rate and a deposition apparatus having the same.

In general, an atomic layer deposition apparatus includes a step of feeding a source gas onto a substrate to be deposited over time t 1 to t 2 , and purging to remove the source gas around the substrate to be deposited over time t 2 to t 3 . After the step, through the step of feeding the reaction gas on the substrate to be deposited over time t 3 to t 4 , the deposition to form an atomic layer thickness formed by the reaction of the source gas and the reaction gas on the substrate Device. Of course, the reaction gas purging step is further passed through the reaction gas purging step.

However, since the conventional atomic layer deposition apparatus is a time-division deposition method, there is a problem in that deposition on the next substrate cannot be started until deposition is completed on one substrate to be deposited. In addition, there is a problem in that the configuration of the atomic layer deposition apparatus is inevitably complicated so that source gas feeding, source gas purging, reaction gas feeding, and reaction gas purging are performed in the same space.

The present invention has been made to solve various problems including the above problems, and an object thereof is to provide a linear source having a simple configuration and an improved deposition speed and a deposition apparatus having the same. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, a source gas injection unit capable of injecting a source gas downward, a reaction gas injection unit capable of injecting a reaction gas downward, and between the source gas injection unit and the reaction gas injection unit A linear source is provided, which is located at and has a pumping unit having at least two pumping zones capable of pumping gas outward. The pumping unit may include a first pumping zone adjacent to the source gas injection unit and a second pumping zone adjacent to the reaction gas injection unit.

A partition wall may be disposed between the first pumping zone and the second pumping zone. Meanwhile, the first pumping zone and the second pumping zone may be pumped by the same pump.

Alternatively, the pumping unit may further include a purging nozzle disposed between the first pumping zone and the second pumping zone and capable of injecting gas downward. In this case, the purging nozzle may inject nitrogen gas downward. On the other hand, the purging nozzle may partition the first pumping zone and the second pumping zone pumped by the same pump.

The lower end of the source gas injection unit may be located below the lower end of the reaction gas injection unit.

In this case, the pumping unit may include a first pumping zone adjacent to the source gas injection unit, a second pumping zone adjacent to the reaction gas injection unit, a partition interposed between the first pumping zone and the second pumping zone, or It includes a purging nozzle, the lower end of the partition or the purging nozzle may be located below the lower end of the source gas injection unit.

On the other hand, the source gas injection unit has a source gas injection unit extending from the top to the bottom, the source gas injection unit in the first position, the second position and the third position sequentially located from the top to the bottom, the second position The cross-sectional area at may be greater than the cross-sectional area at the first location and the cross-sectional area at the third location, and the cross-sectional area at the third location may be smaller than the cross-sectional area at the first location. In this case, the source gas injection portion includes an inlet, a diffusion portion and an outlet passage sequentially positioned from top to bottom, wherein the first position is between the inlet and the diffusion, and the third position is the diffusion and the outlet. It may be between flow paths. In this case, the source gas injection portion may increase in cross-sectional area from the third position toward the lower side.

The source gas injection unit may have a source gas injection part extending from an upper part to a lower part, and the source gas injection part may be bent from the lower side toward the pumping unit.

According to another aspect of the invention, any one of the above linear sources, a transfer unit which is disposed below the linear source and can transfer a substrate to be deposited, at least a portion of the transfer unit and the linear source A vapor deposition apparatus is provided, the chamber having at least a portion of the chamber positioned therein.

In this case, the distance between the source gas injection unit and the transfer unit may be shorter than the distance between the reaction gas injection unit and the transfer unit.

According to another aspect of the present invention, a linear source array including a plurality of linear sources sequentially arranged, each of the plurality of linear sources is any one of the linear sources as described above, and the linear source array lower side A deposition apparatus is provided, comprising: a transfer unit disposed in and capable of transferring a substrate on which deposition is to be carried out, and a chamber in which at least a portion of the transfer unit and at least a portion of the linear source array are located therein.

In this case, the pump may further include an additional pumping unit positioned between the plurality of linear sources and capable of pumping gas to the outside. Furthermore, the additional pumping unit may further include an additional purging nozzle capable of injecting gas downward. In this case, the additional pumping unit may have at least two additional pumping zones capable of pumping gas to the outside, and the additional purging nozzle may be located between two additional pumping zones of the at least two additional pumping zones. .

Meanwhile, the source gas injection unit of each of the plurality of linear sources may be connected to the same source gas supply unit, and the reaction gas injection unit of each of the plurality of linear sources may be connected to the same reaction gas supply unit. Similarly, pumping zones of each of the plurality of linear sources may be connected to the same pump.

The distance between the source gas injection unit and the transfer unit may be shorter than the distance between the reaction gas injection unit and the transfer unit.

According to an embodiment of the present invention made as described above, it is possible to implement a linear source and a deposition apparatus having the same, the configuration is simple, but the deposition speed is improved. Of course, the scope of the present invention is not limited by these effects.

1 is a partially cutaway perspective view schematically showing a linear source according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view schematically illustrating that the linear source and the transfer unit of FIG. 1 are disposed.
3 is a conceptual diagram schematically illustrating a moving speed of a gas when using a linear source according to a comparative example.
4 is a graph schematically showing the concentration of the source gas when using the linear source according to the comparative example.
5 is a conceptual diagram schematically illustrating a moving speed of a gas when the linear source of FIG. 1 is used.
6 is a graph schematically showing the concentration of source gas when using the linear source of FIG.
FIG. 7 is a cross-sectional view schematically illustrating that a linear source and a transfer unit are disposed according to another embodiment of the present invention. FIG.
8 is a conceptual diagram schematically illustrating a moving speed of a gas when the linear source of FIG. 7 is used.
9 is a graph schematically showing the concentration of source gas when using the linear source of FIG.
10 is a cross-sectional view schematically showing that a linear source and a transfer unit are disposed according to another embodiment of the present invention.
FIG. 11 is a cross-sectional view schematically illustrating that a linear source and a transfer unit are disposed according to another embodiment of the present invention. FIG.
FIG. 12 is a conceptual diagram schematically illustrating an enlarged SR portion of FIG. 11.
FIG. 13 is a cross-sectional view schematically illustrating that a linear source and a transfer unit are disposed according to another embodiment of the present invention. FIG.
14 is a cross-sectional view schematically showing a deposition apparatus according to another embodiment of the present invention.
15 is a schematic cross-sectional view of a deposition apparatus according to another embodiment of the present invention.
16 is a cutaway perspective view schematically showing a linear source according to another embodiment of the present invention.
17 is a conceptual diagram schematically illustrating a deposition apparatus according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, Is provided to fully inform the user. Also, for convenience of explanation, the components may be exaggerated or reduced in size.

In the following embodiments, the x-axis, the y-axis, and the z-axis are not limited to three axes on the orthogonal coordinate system, and can be interpreted in a broad sense including the three axes. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

FIG. 1 is a partial cutaway perspective view schematically showing a linear source according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view schematically showing that the linear source and the transfer part of FIG. 1 are disposed.

The linear source according to the present embodiment includes a source gas injection unit 10, a reaction gas injection unit 20, and a pumping unit 30 positioned between the source gas injection unit 10 and the reaction gas injection unit 20. Equipped. Furthermore, the source gas injection unit 10, the pumping unit 30 and the reaction gas injection unit 20 may be further provided with a transfer unit 40 disposed below. The transfer unit 40 may transfer the substrate 50 to be deposited in a horizontal direction (eg, + x direction). Although the drawing shows that the transfer unit 40 includes the roller 42 and the conveyor belt 44, this is merely an example, and various modifications are possible, such as a configuration including a rail and a linear motor. .

The source gas injection unit 10 may inject the source gas downward. The drawing shows that the source gas can be injected in the -z direction through the source gas injection unit 12 extending from the top to the bottom (in the -z direction). The source gas injection unit 12 may be understood as a nozzle. The source gas injected in the -z direction through the source gas injector 12 may pass through the source gas injector 12 and spread in a substantially horizontal direction on the xy plane as shown in FIG. 2.

When the substrate 50 is disposed on the transfer unit 40 so that the substrate 50 moves in the + x direction and passes under the source gas injection unit 10, the substrate 50 is injected downward from the source gas injection unit 10. The source gas is to form a source material layer on a portion located below the source gas injection unit 10 of the substrate 50. As the substrate 50 moves in the + x direction, a source material layer is formed on the entire surface of the substrate 50. The source material layer may be, for example, a trimethyl aluminum (TMA: Al (CH 3 ) 3 ) layer.

The reaction gas injection unit 20 may inject the reaction gas downward. In the drawing, one reaction gas inlet 22a is positioned at an upper portion, a plurality of reaction gas outlets 22b are positioned at a lower portion, and the reaction gas injection unit 20 forms a hollow diffusion space inside the reaction of the shower head structure. The gas injection unit 20 is shown. However, the present invention is not limited to this, and it is needless to say that various modifications are possible, such as having a plurality of nozzles extending from the upper part to the lower part (in the -z direction).

When the substrate 50 is disposed on the transfer unit 40 so that the substrate 50 moves in the + x direction and passes under the reaction gas injection unit 20, the reaction gas injection unit 20 is injected downward. The reactant gas reacts with the source material layer formed on the substrate 50 as the substrate 50 passes under the source gas injection unit 10 to form a final material layer. When the source material layer is a trimethyl aluminum (TMA: Al (CH 3 ) 3 ) layer as described above, the reaction gas may contain water vapor or may contain ozone. In this case, the trimethyl aluminum layer may react with water vapor or ozone to form a final material layer, that is, an aluminum oxide (Al 2 O 3 ) layer.

The pumping unit 30 is positioned between the source gas injection unit 10 and the reaction gas injection unit 20 and has at least two pumping zones 31 and 32 capable of pumping gas to the outside. The drawing shows, for example, the case where the pumping unit 30 has two pumping zones 31 and 32. That is, the pumping unit 30 includes a first pumping zone 31 adjacent to the source gas injection unit 10 and a second pumping zone 32 adjacent to the reaction gas injection unit 20. Of course, if necessary, the pumping unit 30 may have a larger number of pumping zones than the two pumping zones 31 and 32.

A partition 33 may be disposed between the first pumping zone 31 and the second pumping zone 32 of the pumping unit 30. In this case, the pump for pumping the first pumping zone 31 and the pump for pumping the second pumping zone 32 may be separately constructed, but the first pumping zone 31 and the second pumping zone 32 may be the same pump So that the configuration can be further simplified.

The first pumping zone 31 is a space defined by the source gas injection unit 10 and the partition wall 33, and the second pumping zone 32 is a space defined by the reaction gas injection unit 20 and the partition wall 33. It can be interpreted as. Further, the first pumping zone 31 and the second pumping zone 32 may be plate-shaped conduits extending in the y-axis direction in which gas outlets are formed. In such various cases, the first pumping zone 31 and the second pumping zone 32 may be pumped by the same pump.

As described above, since the conventional atomic layer deposition apparatus is a time-division deposition method, there is a problem in that deposition on the next substrate cannot be started until deposition is completed on one substrate to be deposited. However, in the case of using the linear source according to the present embodiment, since the deposition process is space division, the substrate 50 may be continuously introduced through the transfer unit 40 and the deposition may be performed. Of course, the deposition apparatus having the linear source according to this embodiment may also be referred to as a new concept atomic layer deposition apparatus.

In addition, the conventional atomic layer deposition apparatus has a problem that the configuration of the atomic layer deposition apparatus is inevitably complicated to make the source gas feeding, the source gas purging, the reaction gas feeding, the reaction gas purging in the same space. However, in the deposition apparatus having the linear source according to the present embodiment, the region in which the source gas is injected, the region in which the reaction gas is injected, and the region in which the pump is performed are separated and the configuration of each region is simple, so that the overall deposition apparatus is provided. The configuration is simplified.

Particularly, in the case of the linear source according to the present embodiment, the first gas is discharged to the outside from the first pumping zone 31 and the second pumping zone 32, and accordingly, the first pumping is performed under the pumping unit 30. Between the zone 31 and the second pumping zone 32, a blocking region B in which the gas flow is stagnant is formed. As a result, the source gas which is injected downward from the source gas injection unit 10 (-z direction) and moves in a substantially horizontal direction on the xy plane and spreads is blocked by the blocking area B, whereby the reaction gas injection unit ( 20) Movement to the lower region is effectively prevented. Similarly, the reaction gas injected downward from the reaction gas injection unit 20 (-z direction) is also blocked by the blocking area B, so that the movement to the area below the source gas injection unit 10 is effectively prevented. do.

FIG. 3 is a conceptual diagram schematically showing a moving speed of a gas in a source gas injection unit and a pumping zone and its vicinity in an atomic layer deposition apparatus having one pumping zone according to a comparative example, and FIG. 4 is a comparative example. It is a graph which shows schematically the density | concentration of the source gas in each part of the atomic layer vapor deposition apparatus which concerns. 5 is a conceptual diagram schematically illustrating a moving speed of a gas when the linear source of FIG. 1 is used, and FIG. 6 is a graph schematically illustrating a concentration of source gas when the linear source of FIG. 1 is used.

Comparing FIG. 3 with FIG. 5, in the case of the atomic layer deposition apparatus according to the comparative example, the size of the region having the low gas flow rate indicated in blue under the one pumping zone is small, whereas the linear source according to the present embodiment is used. It can be seen that the area between the two pumping zones in which the gas flow rate, which is shown in blue, is low is so large that it fills the spaces between the pumping unit substrates. In the case of the atomic layer deposition apparatus according to the comparative example, the source gas moves to the region into which the reaction gas is injected, or the reaction gas is very likely to move to the region into which the source gas is injected, whereas the linear source according to the present embodiment is used. In this case, it means that the source gas moves to the region into which the reaction gas is injected, or the possibility that the reaction gas moves to the region into which the source gas is injected may be significantly lowered.

This is a graph schematically showing the concentration of the source gas in each part of the atomic layer deposition apparatus according to the comparative example, and a graph schematically showing the concentration of the source gas when the linear source of FIG. 1 is used. Comparing 6 makes it clear. Referring to FIG. 4, in the case of the atomic layer deposition apparatus according to the comparative example, the concentration of the source gas at a distance of 0.03 m from the source gas injection unit is about 40%, whereas the source when the linear source according to the present embodiment is used. It can be seen that the concentration of the source gas at a position 0.03 m away from the gas injection unit is drastically reduced to approximately 32%.

On the other hand, the source gas is to form a source material layer on the deposition target substrate 50, the source material layer is formed on the surface of the substrate 50 to a thickness of approximately several tens or hundreds of angstroms in atomic units. As such, the source material layer is formed to have a very thin thickness. In this process, the source gas may be spread along the surface of the substrate 50 so that there is no portion where the source material layer is not formed on the surface of the substrate 50. It is desirable to allow laminar flow to be formed.

For this purpose, it may be considered that the distance d1 between the source gas injection unit 10 and the lower transfer unit 40 is shortened. The shortening of the distance d1 between the source gas injection unit 10 and the lower transfer unit 40 means that the distance between the substrate 50 and the source gas injection unit 10 to be moved on the transfer unit 40 is reduced. Means shorter. This also applies to the following embodiments and modifications thereof.

Meanwhile, since the reaction gas only needs to react with the source material layer formed on the surface of the substrate 50, it is not necessary to form a laminar flow of the reaction gas, and sufficient reactant gas can be supplied to the source material layer on the surface of the substrate 50. If there is enough. Therefore, the distance d2 between the reaction gas injection unit 20 and the transfer unit 40 is greater than the distance d1 between the source gas injection unit 10 and the transfer unit 40, and thus, the upper portion of the substrate 50. It is desirable to ensure a space in which the reaction gas can be sufficiently present. This may be understood that the lower end (-z direction) of the source gas injection unit 10 is located below the lower end (-z direction) of the reaction gas injection unit 20.

7 is a cross-sectional view schematically showing that a linear source and a transfer unit are disposed according to another embodiment of the present invention. It is the configuration of the pumping unit 30 that the linear source according to the present embodiment differs from the linear source described above with reference to FIG. 1 and the like.

The pumping unit 30 of the linear source according to the present embodiment further includes a purging nozzle 33a disposed between the first pumping zone 31 and the second pumping zone 32 and capable of injecting gas downward. do. This purging nozzle 33a can inject nitrogen gas downward (-z direction). At this time, the purging nozzle 33a is located between the first pumping zone 31 and the second pumping zone 32, so that the first pumping zone 31 and the second pumping zone 32 pumped by the same pump. Can be partitioned

FIG. 8 is a conceptual diagram schematically showing a moving speed of a gas when using the linear source of FIG. 7, and FIG. 9 is a graph schematically showing a concentration of source gas when using the linear source of FIG. 7.

Referring to FIG. 8, it can be seen that a region having a low gas flow rate indicated in blue is formed between the purging nozzle and the first pumping zone. This means that the probability that the source gas moves through the pumping unit 30 toward the reaction gas injecting unit 20 is significantly lowered.

4 and 6, in the case of the atomic layer deposition apparatus according to the comparative example, the concentration of the source gas at a distance of 0.03 m from the source gas injection unit is about 40%, whereas the embodiment described above with reference to FIG. 1. When using the linear source according to the source gas concentration from 0.03m away from the source gas injection it can be seen that the concentration sharply reduced to approximately 32%. Further, referring to FIG. 9, it can be seen that when using the linear source according to the present embodiment, the source gas concentration at a position 0.03 m away from the source gas injector is rapidly reduced to approximately 24%.

On the other hand, in the case of the linear source according to the present embodiment, in order to form a laminar flow (laminar flow) so that the source gas can spread along the surface of the substrate 50, the source gas injection unit 10 and the transfer of the lower portion It is preferable to make the distance d1 between the units 40 short. In addition, since the reaction gas only needs to react with the source material layer formed on the surface of the substrate 50, the distance d2 between the reaction gas injection unit 20 and the transfer unit 40 is transferred to the source gas injection unit 10. It is preferable to make it larger than the distance d1 between the units 40 so as to secure a space in which the reaction gas can sufficiently exist on the substrate 50. This may be understood that the lower end (-z direction) of the source gas injection unit 10 is located below the lower end (-z direction) of the reaction gas injection unit 20.

10 is a cross-sectional view schematically showing that a linear source and a transfer unit are disposed according to another embodiment of the present invention. It is the configuration of the pumping unit 30 that the linear source according to the present embodiment differs from the linear source described above with reference to FIG. 1.

The pumping unit 30 of the linear source according to the present embodiment includes a first pumping zone 31 adjacent to the source gas injection unit 10, a second pumping zone 32 adjacent to the reaction gas injection unit 20, and Barrier 33 is interposed between the first pumping zone 31 and the second pumping zone 32, the distance (d3) between the partition 33 and the transfer unit 40 is the first pumping zone ( 31) is shorter than the distance d1 between the transfer unit 40. This may be understood that the lower end of the partition 33 (-z direction) is located below the lower end of the source gas injection unit 10 (the z direction).

In the case of the linear source according to the embodiment described above with reference to FIG. 1, a blocking region B in which a gas flow is stagnated between the first pumping zone 31 and the second pumping zone 32 as shown in the conceptual diagram of FIG. 5. Is formed, the first pumping zone (B) in the blocking area (B) is narrowed by narrowing the vertical width in the blocking area (B), that is, the distance d3 between the partition 33 and the transfer unit 40. It is possible to significantly increase the gas flow stagnation effect between the 31 and the second pumping zone (32).

Of course, such a configuration may also be applied to the linear source according to the embodiment described above with reference to FIG. 7. That is, the pumping unit 30 includes the first pumping zone 31 adjacent to the source gas injection unit 10, the second pumping zone 32 adjacent to the reaction gas injection unit 20, and the first pumping zone 31. ) And a purging nozzle 33a interposed between the second pumping zone 32 and the distance between the purging nozzle 33a and the transfer unit 40 is the first pumping zone 10 and the transfer unit 40. It may be shorter than the distance (d1) between. This can be understood that the lower end (-z direction) of the purging nozzle 33a is located below the lower end (-z direction) of the source gas injection unit 10.

FIG. 11 is a cross-sectional view schematically illustrating that a linear source and a transfer unit are disposed, and FIG. 12 is a schematic diagram schematically illustrating an enlarged SR part of FIG. 11. It is the configuration of the source gas injection unit 10 that the linear source according to the present embodiment differs from the linear source described above with reference to FIG. 1.

The source gas injection unit 10 of the linear source according to the present embodiment has a source gas injection unit 12a extending from the top to the bottom, and the source gas injection unit 12a is located at a first position sequentially from the top to the bottom. At P1, the second position P2 and the third position P3, the cross-sectional area A2 at the second position P2 is the cross-sectional area A1 at the first position P1 and the third position ( It is larger than the cross-sectional area A3 at P3), and the cross-sectional area A3 at the third position P3 is smaller than the cross-sectional area A1 at the first position P1. This includes an inlet, a diffusion portion, and an outlet passage in which the source gas injection portion 12a is sequentially positioned from top to bottom, the first position P1 is between the inlet and the diffusion portion, and the third position P3 is diffusion. It can be understood that between the part and the outlet flow path, the second position P2 means for example the center of the diffusion part.

As described above, the source gas injected in the direction of the substrate 50 through the source gas injection unit 12a may form a laminar flow so that the source gas may spread along the surface of the substrate 50. For this purpose, it is preferable that the speed of the substrate 50 direction (-z direction) of the source gas injected in the direction of the substrate 50 is not large.

In the case of the linear source according to the present embodiment, the source gas injection portion 12a having the shape as described above is provided, so that the cross-sectional area A3 at the third position P3 is the smallest and at the second position P2. Velocity of the source gas in the diffusion portion, which is a convex region between the first position P1 and the third position P3, by making the cross-sectional area A2 larger than the cross-sectional area A1 at the first position P1. Can significantly reduce the That is, the linear source according to the present embodiment has a speed regulator (SR) of the source gas injection unit 12a, and as a result, the speed when the source gas reaches the substrate 50 as a result. Can significantly reduce the This may contribute to the laminar flow formation of the source gas.

In particular, by increasing the cross-sectional area of the source gas injection portion 12a from the third position P3 to the lower portion (-z direction), the speed at which the source gas reaches the substrate 50 is drastically reduced. A laminar flow of gas can be caused to form.

FIG. 13 is a cross-sectional view schematically illustrating that a linear source and a transfer unit are disposed according to another embodiment of the present invention. FIG. It is the configuration of the source gas injection unit 10 that the linear source according to the present embodiment differs from the linear source described above with reference to FIG. 1.

The source gas injection unit 10 of the linear source according to the present embodiment has a source gas injection unit 12b extending from the top to the bottom (in the -z direction), and the source gas injection unit 12b is the pumping unit at the bottom. It is bent in the direction of (30). In the case of the linear source according to the present embodiment, when the source gas is discharged downward from the source gas inlet 12b, the direction thereof is discharged in the direction of the pumping unit 30, which is effective in forming the laminar flow of the source gas. Can be. The source gas injection unit 12b may be understood as having a direction regulator DR of the source gas at the bottom thereof.

On the other hand, the linear source has been described as having a source gas injection unit 10, the pumping unit 20 and the reaction gas injection unit 30 so far, the present invention is not limited to this, the linear source as described above Of course, at least one of them is located in the chamber, and at least a portion of the transfer unit is also included in the present invention deposition apparatus is also included. In the case of the transfer part, only a part of the transfer part may be located in the chamber to transfer the substrate, etc., to be deposited, from the outside of the chamber into the chamber. It may be located in the chamber.

14 is a cross-sectional view schematically showing a deposition apparatus according to another embodiment of the present invention. In the deposition apparatus according to the present exemplary embodiment, as illustrated in FIG. 14, the linear source 100, which is a set of the source gas injection unit 10, the pumping unit 20, and the reaction gas injection unit 30, may include a transfer unit 40. By having a plurality of sequentially disposed along the transfer part 40 from the top, the number of final material layer formation can be controlled to adjust the thickness of the final material layer to be formed. The plurality of linear sources 100 sequentially arranged may be referred to as a linear source array.

In FIG. 14, two linear sources 100 are disposed, but the present invention is not limited thereto, and a larger number of linear sources 100 may be disposed. Here, the linear sources 100 may take the form of a linear source according to the above-described embodiments and modifications thereof.

In this case, the linear sources 100 may be located in the chamber, and at least a portion of the transfer part 40 may be located in the chamber. In the case of the transfer part 40, only a part of the transfer part 40 may be positioned in the chamber to transfer the substrate 50, which is an object to be deposited, from the outside of the chamber into the chamber. The internal transfer may be located entirely in the chamber.

In the pumping unit of each of the plurality of linear sources 100, each pumping zone may be pumped by the same single pump. That is, the pumping zones 31 and 32 of the linear source 100 in the front stage and the pumping zones 31 and 32 of the linear source 100 in the rear stage may both be pumped by the same single pump.

Meanwhile, in the deposition apparatus according to the present embodiment, as illustrated in FIG. 14, an additional pumping unit 60 positioned between the plurality of linear sources 100 and capable of pumping gas to the outside may be provided. have. The additional pumping unit 60 is a reaction gas supplied by the reaction gas injection unit 20 of the linear source 100 at the front end, and a source gas supplied by the source gas injection unit 10 of the linear source 100 at the rear end. It may serve to pump gas to the outside. If necessary, the pumping zone of the additional pumping unit 60 is pumped by the same pump as the pumping zones 31 and 32 of the pumping unit 30 of the linear source 100, thereby simplifying the configuration of the entire deposition apparatus. can do.

Furthermore, as shown in FIG. 15, which is a cross-sectional view schematically showing a deposition apparatus according to another embodiment of the present invention, the additional pumping unit 60 may further inject gas downwardly. It may be further provided. In this case, both sides of the additional purging nozzle 63a may be additional pumping zones 61 and 63. The additional pumping unit 60 has a structure similar to that of the pumping unit 30 of the linear source described above with reference to FIG. 7, and the reaction supplied by the reaction gas injecting unit 20 of the linear source 100 at the front end. The gas and the source gas supplied by the source gas injection unit 10 of the rear linear source 100 may effectively escape to the outside without reacting with each other.

In FIG. 15, the additional pumping unit 60 has two additional pumping zones 61 and 63 and an additional purging nozzle 63a disposed therebetween, but the present invention is not limited thereto. For example, it is possible to have a partition instead of the additional purging nozzle (63a), it is possible to have a variety of modifications, such as having one additional pumping zone and one additional purging nozzle. Of course, the configuration of the additional pumping unit 60 may take the same or similar structure as the pumping unit 30 of the linear source according to the above-described embodiments.

In the plurality of linear sources 100, each source gas injection unit 10 is connected to the same source gas supply unit, and each reaction gas injection unit 20 is connected to the same reaction gas supply unit. Can be simplified.

Meanwhile, in the case of the linear source 100, as shown in FIG. 16, which is a cutaway perspective view schematically showing a linear source according to another embodiment of the present invention, the source gas injection unit 10 and the reaction gas injection unit 20 and the pumping unit 30 may be integrally formed. Of course, FIG. 16 illustrates a case in which the source gas injection unit 10, the reaction gas injection unit 20, and the pumping unit 30 are completely formed in one frame, but a plurality of frames may be coupled to each other.

In FIG. 16, a plurality of source gas injection units 12a extending from the top to the bottom are arranged along the y axis, interconnected by through holes extending in the y axis direction from the top, and source gas on the upper surface of the linear source 100. Although the source gas is supplied to each source gas injection unit 12a from the injection hole 12a`, the present invention is not limited thereto. For example, the source gas injection unit 12a may have a plate shape in which a shape such as a cross section on the zx plane shown in FIG. 16 continues without changing in the y-axis direction.

In the drawing, a plurality of first pumping zones 31 and second pumping zones 32 are also arranged in the y-axis direction and are connected to each other by through-holes extending in the y-axis direction. The pumping zone 31 and the second pumping zone 32 may also have a plate shape extending in the y-axis direction. In any case, the first pumping zone 31 and the second pumping zone 32 may discharge the lower gas to the outside by a pump connected to the first pumping hole 31 ′ and the second pumping hole 32 ′. have. Of course, the first pumping zone 31 and the second pumping zone 32 may be pumped by the same pump.

Meanwhile, although FIG. 16 illustrates a case in which the linear source 100 is integrally formed, the linear source array in which the linear sources 100 are sequentially arranged may be integrally formed. That is, the source gas injection unit 10, the pumping unit 30, the reaction gas injection unit 20, the additional pumping unit 60, the source gas injection unit 10, the pumping unit 30, and the reaction gas injection unit 20. A linear source array including a configuration such as) may be integrally formed similarly to FIG. 16.

17 is a conceptual diagram schematically illustrating a deposition apparatus according to another embodiment of the present invention. As shown, the deposition apparatus according to the present embodiment includes a linear source 100 according to the embodiment as described above with reference to FIG. The linear source 100 may have a bent portion at an upper portion as shown, so that the bent portion may be fixed to the chamber 70 so as to span the chamber 70. In this case, it may be understood that only a part of the linear source 100 is located inside the chamber 70.

The transfer unit 40 is positioned below the linear source 100, and a seating unit 45 on which the transfer member such as a substrate is mounted is positioned on the transfer unit 40, and is transferred in the horizontal direction by the transfer unit 40. Can be. In a process in which a transfer body such as a substrate is seated on the seating part 45, there may be a pin 71 that may move up and down to align the substrate and the mask or the like and rest on the seating part 45. A stage 72 for horizontal movement of the pin 71 for alignment, a motor (not shown) for vertical movement of the pin 71, and the like may be disposed.

In FIG. 17, the linear source 100 is represented, but various modifications are possible, such as being a linear source array. That is, at least a portion of the linear source array may be fixed to the chamber 70 to be located in the chamber 70.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

10: source gas injection unit 20: reaction gas injection unit
30: pumping unit 40: transfer unit
50: substrate

Claims (22)

A source gas injection unit capable of injecting source gas downward;
A reaction gas injection unit capable of injecting the reaction gas downward; And
A pumping unit positioned between the source gas injection unit and the reaction gas injection unit and having at least two pumping zones capable of pumping gas to the outside;
And a linear source. The method of claim 1,
Wherein said pumping unit comprises a first pumping zone adjacent said source gas injection unit and a second pumping zone adjacent said reactive gas injection unit. 3. The method of claim 2,
A barrier rib is disposed between the first pumping zone and the second pumping zone. The linear source of claim 2, wherein the first pumping zone and the second pumping zone are pumped by the same pump. 3. The method of claim 2,
The pumping unit further includes a purging nozzle disposed between the first pumping zone and the second pumping zone and capable of injecting gas downward. The method of claim 5,
The purging nozzle is a linear source that can inject nitrogen gas downward. The method of claim 5,
And the purging nozzle partitions the first and second pumping zones pumped by the same pump. The method of claim 1,
The lower end of the source gas injection unit, the linear source is located below the lower end of the reaction gas injection unit. 9. The method of claim 8,
The pumping unit includes a first pumping zone adjacent to the source gas injection unit, a second pumping zone adjacent to the reaction gas injection unit, and a partition or purging nozzle interposed between the first pumping zone and the second pumping zone. And a lower end of the barrier rib or the purging nozzle is located below the lower end of the source gas injection unit. The method of claim 1,
The source gas injection unit has a source gas injection unit extending from the top to the bottom, the source gas injection unit in the first position, the second position and the third position sequentially located from top to bottom, And the cross-sectional area is larger than the cross-sectional area at the first position and the cross-sectional area at the third position, and the cross-sectional area at the third position is smaller than the cross-sectional area at the first position. The method of claim 10,
The source gas injection portion includes an inlet, a diffusion portion, and an outlet passage sequentially positioned from top to bottom, wherein the first position is between the inlet and the diffusion, and the third position is between the diffusion and the outlet passage. Phosphorus, linear sauce. The method of claim 10,
The source gas injection portion, the cross-sectional area is increased from the third position to the lower, the linear source. The method of claim 1,
The source gas injection unit has a source gas injection portion extending from the top to the bottom, the source gas injection portion bent in the direction of the pumping unit from the bottom, the linear source. The linear source of any one of claims 1 to 13;
A transfer unit disposed below the linear source and capable of transferring a substrate to be deposited; And
A chamber for placing at least a portion of the transfer unit and at least a portion of the linear source therein;
Deposition apparatus having a. 15. The method of claim 14,
And a distance between the source gas injection unit and the transfer unit is shorter than a distance between the reaction gas injection unit and the transfer unit. A linear source array comprising a plurality of linear sources sequentially arranged, wherein each of the plurality of linear sources is a linear source of any one of claims 1 to 13;
A transfer unit disposed below the linear source array and configured to transfer a substrate to be deposited; And
A chamber for placing at least a portion of the transfer unit and at least a portion of the linear source array therein;
Deposition apparatus having a. 17. The method of claim 16,
And an additional pumping unit positioned between the plurality of linear sources and capable of pumping gas to the outside. 18. The method of claim 17,
The additional pumping unit further comprises an additional purging nozzle for injecting gas downward, deposition apparatus. 19. The method of claim 18,
And the additional pumping unit has at least two additional pumping zones capable of pumping gas to the outside, and the additional purging nozzle is located between two additional pumping zones of the at least two additional pumping zones. 17. The method of claim 16,
The source gas injection unit of each of the plurality of linear sources is connected to the same source gas supply, the reaction gas injection unit of each of the plurality of linear sources is connected to the same reaction gas supply. 17. The method of claim 16,
And pumping zones of each of the plurality of linear sources are connected to the same pump. 17. The method of claim 16,
And a distance between the source gas injection unit and the transfer unit is shorter than a distance between the reaction gas injection unit and the transfer unit.
KR1020120074758A 2012-07-09 2012-07-09 Linear source and deposition apparatus comprising the same KR20140007623A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020036261A1 (en) * 2018-08-17 2020-02-20 주식회사 넥서스비 Apparatus for depositing atomic layer and method for depositing atomic layer using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020036261A1 (en) * 2018-08-17 2020-02-20 주식회사 넥서스비 Apparatus for depositing atomic layer and method for depositing atomic layer using same
CN112654732A (en) * 2018-08-17 2021-04-13 株式会社奈瑟斯比 Atomic layer deposition apparatus and atomic layer deposition method using the same

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