JPH0913172A - Lifting mechanism for vacuum device - Google Patents
Lifting mechanism for vacuum deviceInfo
- Publication number
- JPH0913172A JPH0913172A JP18481295A JP18481295A JPH0913172A JP H0913172 A JPH0913172 A JP H0913172A JP 18481295 A JP18481295 A JP 18481295A JP 18481295 A JP18481295 A JP 18481295A JP H0913172 A JPH0913172 A JP H0913172A
- Authority
- JP
- Japan
- Prior art keywords
- article
- substrate
- mounting table
- pin
- elevating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は真空装置内に設置される
昇降機構に関するものであり、更に詳しくは、真空装置
内で基板等の物品を昇降させるための真空装置用昇降機
構に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an elevating mechanism installed in a vacuum apparatus, and more particularly, to an elevating mechanism for a vacuum apparatus for elevating an article such as a substrate in the vacuum apparatus.
【０００２】[0002]
【従来の技術及びその問題点】図９は従来使用されてい
る基板昇降機構２１が組み込まれた真空装置の一例とし
てのプラズマＣＶＤ装置２０の縦断面図である。基板昇
降機構２１は昇降支持筒５１に固定され基板Ｓが載置さ
れる基板載置台５４とその周縁部に配置された基板支持
ピン５５、及び基板支持ピン５５の直下に設けられた昇
降ピン６１とからなっている。2. Description of the Related Art FIG. 9 is a vertical cross-sectional view of a plasma CVD apparatus 20 as an example of a vacuum apparatus incorporating a conventionally used substrate elevating mechanism 21. The substrate elevating mechanism 21 is fixed to the elevating and lowering support cylinder 51, the substrate placing table 54 on which the substrate S is placed, the substrate supporting pins 55 arranged at the peripheral edge thereof, and the elevating and lowering pins 61 provided immediately below the substrate supporting pins 55. It consists of
【０００３】基板載置台５４には図示せずとも基板Ｓを
加熱して所定の温度に維持するためのヒータが内蔵され
ている。基板載置台５４は真空チャンバ２２の筐体２３
の底面部分を下方から挿入され、図示しないエヤシリン
ダによって昇降される昇降支持筒５１に固定されてお
り、昇降支持筒５１と筐体２３との間の気密化のため
に、昇降支持筒５１を囲むようにフランジ付き金属ベロ
ーズ５３が設けられＯ−リング５７を介して筐体２３の
下面に取り付けられている。The substrate mounting table 54 has a built-in heater (not shown) for heating the substrate S to maintain it at a predetermined temperature. The substrate mounting table 54 is the housing 23 of the vacuum chamber 22.
Is fixed to an elevating and lowering support cylinder 51 which is inserted from below and is moved up and down by an air cylinder (not shown), and surrounds the elevating and lowering support cylinder 51 for airtightness between the elevating and lowering support cylinder 51 and the housing 23. Thus, the flanged metal bellows 53 is provided and attached to the lower surface of the housing 23 via the O-ring 57.
【０００４】基板載置台５４の周縁部には上端部に鍔５
６を有する４本の基板支持ピン５５が対称位置において
上下に緩く挿通して設けられ、基板載置台５４の上昇位
置において、基板支持ピン５５は鍔５６を基板載置台５
４に形成された座ぐりに嵌入して垂下される。そして基
板Ｓは４本の基板支持ピン５５の鍔５６を覆うように載
置される。A flange 5 is provided at the upper end of the peripheral edge of the substrate mounting table 54.
Four substrate support pins 55 having 6 are loosely inserted vertically at symmetrical positions, and at the raised position of the substrate mounting table 54, the substrate support pins 55 move the collar 56 to the substrate mounting table 5.
4 is inserted into the counterbore formed in 4 and hung down. Then, the substrate S is placed so as to cover the flanges 56 of the four substrate support pins 55.
【０００５】また、筐体２３の底面部分の基板支持ピン
５５の直下となる箇所には、下方から挿通されて図示し
ないエヤシリンダによって昇降し、上端部に鍔６２を有
する昇降ピン６１が設けられている。また、昇降ピン６
１と筐体２３との間の気密化のために、昇降ピン６１を
囲むようにフランジ付き金属ベローズ６３が設けられ、
Ｏ−リング６４を介して筐体２３の下面に取り付けられ
ている。Further, an elevating pin 61 which is inserted from below and is moved up and down by an air cylinder (not shown) and which has a flange 62 at the upper end is provided at a position directly below the substrate support pin 55 on the bottom surface of the housing 23. There is. Also, lifting pins 6
A metal bellows 63 with a flange is provided so as to surround the elevating pin 61 for airtightness between the 1 and the housing 23.
It is attached to the lower surface of the housing 23 via an O-ring 64.
【０００６】筐体２３の壁面部分には隣接する図示しな
い搬送チャンバに設置された後述する搬送ロボットのハ
ンド３９によって基板Ｓを搬出入するための開口２８が
設けられ、搬出入時以外はゲート弁２９によって密閉さ
れている。An opening 28 for loading / unloading the substrate S by a hand 39 of a transport robot (to be described later) installed in a transport chamber (not shown) adjacent to the wall of the housing 23 is provided, and the gate valve is used except when loading / unloading. It is sealed by 29.
【０００７】筐体２３の上縁部には真空チャンバ２２の
上蓋を兼ねるカソードとしての電極フランジ２４が絶縁
フランジ２６を介して取り付けられ、絶縁フランジ２６
の上下の接触面はＯ−リング２７によって気密が保たれ
ている。電極フランジ２４の中央部にはガス導入パイプ
６５がＯ−リング６６を介して気密に取り付けられてお
り、真空チャンバ２２内において、電極フランジ２４の
下面側の環状隆起部２５には多数のガス整流孔６８を設
けたシャワープレート６７がねじ６９によって取り付け
られている。図示せずとも電極フランジ２４にはＲＦ電
源が接続され、アノードとなる基板載置台５４は筐体２
３と同電位としてアースされている。また、図示せずと
も、真空チャンバ２２は筐体２３に設けた排気管によっ
て真空排気系に接続されている。An electrode flange 24 serving as a cathode, which also serves as an upper lid of the vacuum chamber 22, is attached to an upper edge portion of the housing 23 via an insulating flange 26.
The upper and lower contact surfaces are kept airtight by the O-ring 27. A gas introduction pipe 65 is airtightly attached to the center of the electrode flange 24 via an O-ring 66, and in the vacuum chamber 22, a large number of gas rectifiers are provided in the annular raised portion 25 on the lower surface side of the electrode flange 24. A shower plate 67 having holes 68 is attached by screws 69. Although not shown, an RF power source is connected to the electrode flange 24, and the substrate mounting table 54 serving as an anode is the housing 2
It is grounded as the same potential as 3. Although not shown, the vacuum chamber 22 is connected to a vacuum exhaust system by an exhaust pipe provided in the housing 23.
【０００８】基板Ｓへの薄膜の形成に際しては、真空チ
ャンバ２２内を所定の真空度に維持し、内蔵ヒータで基
板載置台５４を加熱して所定の温度に達すると基板Ｓが
載置される。続いて、ガス導入パイプ６５から原料ガス
が導入され、図示しないＲＦ電源によって高周波電力が
印加されると、電極フランジ２４と基板載置台５４との
間にプラズマ放電が生起し、原料ガスが分解され反応し
て基板Ｓ上に薄膜が形成され始める。そして、所定の膜
厚が得られると、プラズマ放電と原料ガスの導入とを停
止し、残る原料ガスを不活性ガスと置換した後、基板Ｓ
は真空チャンバ２２から搬出され、新しい基板Ｓが搬入
されて成膜が継続される。When forming a thin film on the substrate S, the inside of the vacuum chamber 22 is maintained at a predetermined degree of vacuum, and when the substrate mounting table 54 is heated by the built-in heater to reach a predetermined temperature, the substrate S is mounted. . Subsequently, when the raw material gas is introduced from the gas introduction pipe 65 and high-frequency power is applied by an RF power source (not shown), plasma discharge occurs between the electrode flange 24 and the substrate mounting table 54, and the raw material gas is decomposed. The reaction starts to form a thin film on the substrate S. When a predetermined film thickness is obtained, the plasma discharge and the introduction of the raw material gas are stopped, the remaining raw material gas is replaced with an inert gas, and then the substrate S
Is carried out of the vacuum chamber 22, a new substrate S is carried in, and film formation is continued.
【０００９】上記の基板Ｓの搬出時における昇降機構２
１の動作は図１０のＡ、Ｂ、図１１のＡ、Ｂ、および図
１１のＢにおける［１２］−［１２］線方向の矢視の断
面を示す図１２に示されている。なお、図１０のＡは図
９に対応するが、図１０のＢ以降の図では、動作に関係
しない構成要素は簡略化して示している。A lifting mechanism 2 when the substrate S is unloaded.
The operation of No. 1 is shown in FIG. 12 which is a cross section taken along line [12]-[12] of FIGS. 10A and 10B, 11A and 11B, and 11B. 10A corresponds to FIG. 9, but in FIG. 10B and subsequent drawings, constituent elements not related to the operation are shown in a simplified manner.
【００１０】図１０のＡでは、基板昇降機構２１上の基
板載置台５４はプラズマＣＶＤによる基板Ｓへの成膜時
の位置、すなわち上昇位置にある。図１０のＡの状態か
ら基板載置台５４の昇降支持筒５１が下降され、昇降ピ
ン６１が上昇されて図１０のＢに示すように、昇降ピン
６１の鍔６２は基板載置台５４の下面に接して基板支持
ピン５５を押し上げ、基板Ｓは基板支持ピン５５の鍔５
６に支持されて残り、下降された基板載置台５４との間
に間隙ｇ2 が生じる。次いで、図１１のＡを参照し、隣
接する図示しない搬送チャンバとの間のゲート弁２９が
開とされて、搬送ロボットのハンド３９が開口２８から
挿入され、間隙ｇ2 を進んで基板Ｓの直下に至り停止さ
れる。続いて昇降ピン６１が下降され、基板支持ピン５
５も下降されて、図１１のＢ、図１２を参照し、基板支
持ピン５５の鍔５６の位置がハンド３９よりも下方とな
ることにより、基板支持ピン５５の鍔５６に支持されて
いた基板Ｓはハンド３９へ移載される。そして基板Ｓは
搬送チャンバへ運び出される。次いで新しい基板Ｓが送
り込まれ、新しい基板Ｓの載置された基板載置台５４は
成膜時の上昇位置へ上昇されるが、この搬入時における
基板昇降機構２１の動作は搬出時の場合と丁度逆であ
る。In FIG. 10A, the substrate mounting table 54 on the substrate elevating mechanism 21 is in the position when the film is formed on the substrate S by plasma CVD, that is, in the raised position. From the state of FIG. 10A, the elevating support cylinder 51 of the substrate mounting table 54 is lowered, and the elevating pins 61 are raised so that the collar 62 of the elevating pin 61 is located on the lower surface of the substrate mounting table 54 as shown in FIG. 10B. The substrate support pin 55 is pushed up by contacting, and the substrate S is the collar 5 of the substrate support pin 55.
A gap g 2 is formed between the substrate support table 54 and the substrate support table 54, which is supported by 6 and is lowered. Next, referring to FIG. 11A, the gate valve 29 between the adjacent transfer chamber (not shown) is opened, the hand 39 of the transfer robot is inserted through the opening 28, and the hand 39 of the transfer robot is advanced through the gap g 2 and the substrate S It stops right below. Subsequently, the lift pins 61 are lowered, and the substrate support pins 5
5 is also lowered, and referring to FIGS. 11B and 12, the position of the flange 56 of the substrate support pin 55 is lower than the hand 39, so that the substrate supported by the flange 56 of the substrate support pin 55. The S is transferred to the hand 39. Then, the substrate S is carried out to the transfer chamber. Next, a new substrate S is sent in, and the substrate mounting table 54 on which the new substrate S is placed is raised to the raised position during film formation. The opposite is true.
【００１１】従来例の基板昇降機構２１は上述のように
使用されるが、これを組み込んだプラズマＣＶＤ装置２
０は、図９に示すように、真空チャンバ２２の下方が極
めて錯綜した状態になっている。すなわち、基板載置台
５４の昇降支持筒５１をシールするためのフランジ付き
金属ベローズ５３と昇降支持筒５１を昇降させる図示し
ないエヤシリンダが存在し、その周囲に近接して、４本
の昇降ピン６１のそれぞれについてフランジ付き金属ベ
ローズ６３と図示しないエヤシリンダが存在している。
このことによって、金属ベローズ、エヤシリンダが密
度高く存在するのでメンテナンス作業を行いにくい、
金属ペローズはＯ−リングを介して取り付けているが、
このことは潜在的な真空洩れポイントを増大させてい
る、金属ペローズの占有面積が大きく、結果的に真空
チャンバの内の表面積を大にしている、昇降機構が構
造的に複雑であり、製造コストを高くしている、などの
問題点がある。The substrate elevating mechanism 21 of the conventional example is used as described above, but the plasma CVD apparatus 2 incorporating the same is used.
In the case of 0, as shown in FIG. 9, the lower part of the vacuum chamber 22 is in a very complicated state. That is, there is a flanged metal bellows 53 for sealing the elevating and lowering support cylinder 51 of the substrate mounting table 54 and an air cylinder (not shown) for elevating and lowering the elevating and lowering support cylinder 51. For each, there is a flanged metal bellows 63 and an air cylinder (not shown).
As a result, the metal bellows and air cylinders are densely present, making maintenance difficult.
The metal bellows is attached via an O-ring,
This increases potential vacuum leak points, occupies a large area of metal bellows, resulting in a large surface area within the vacuum chamber, structural complexity of the lifting mechanism, and manufacturing cost. There is a problem such as raising.
【００１２】[0012]
【発明が解決しようとする問題点】本発明は上述の問題
に鑑みてなされ、真空装置内の昇降機構に使用される金
属ベローズの数を減らして潜在的な真空洩れポイントを
減らし、メンテナンス作業が容易であり、かつ真空チャ
ンバを小型し得て製造コストを低下させ得る真空装置用
昇降機構を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and reduces the number of metal bellows used in the elevating mechanism in a vacuum device to reduce potential vacuum leak points and maintenance work. It is an object of the present invention to provide an elevating mechanism for a vacuum device that is easy and that can reduce the size of the vacuum chamber and reduce the manufacturing cost.
【００１３】[0013]
【問題点を解決するための手段】以上の目的は、真空チ
ャンバの底面から内部へ挿入されて二段に昇降する昇降
支持体に固定された物品載置台と、該物品載置台の周縁
部の対称位置において上下方向に緩く挿通され、該物品
載置台の上面側となる上端部と下面側となる下端部とに
鍔を有し、真空処理中において物品が載置される前記物
品載置台の上昇位置では、前記上端部の鍔を前記物品載
置台に形成された座ぐりに嵌入させて垂下される複数の
物品支持ピンと、前記物品載置台の一段目の下降時には
前記物品支持ピンの下降を停止させて前記物品支持ピン
の前記上端部の鍔に支持される前記物品と下降された前
記物品載置台との間に物品搬送機構の先端部が挿入され
る間隙を形成させ、前記物品載置台の二段目の下降時に
は共に下降される前記物品支持ピンの前記上端部の鍔の
位置を挿入されている前記物品搬送機構の先端部より低
くなるまで下降させることによって前記物品支持ピンの
前記上端部の鍔に支持されている前記物品を前記物品搬
送機構の先端部に移載させる部材とからなることを特徴
とする真空装置用昇降機構、によって達成される。SUMMARY OF THE INVENTION The above object is to provide an article mounting table fixed to an elevating support body which is inserted from the bottom surface of a vacuum chamber into the inside and elevates and lowers in two steps, and a peripheral portion of the article mounting table. At the symmetrical position, it is loosely inserted in the vertical direction, has an upper end on the upper surface side and a lower end on the lower surface side of the article mounting table, and the article mounting table on which the article is mounted during vacuum processing In the raised position, a plurality of article support pins that hang down by fitting the flange of the upper end into a counterbore formed in the article placing table, and lowering of the article support pins when descending the first stage of the article placing table. The article mounting table is formed by forming a gap between the article supported by the collar at the upper end of the article supporting pin and the lowered article mounting table so that the tip of the article transport mechanism is inserted. Will be descended together when descending the second stage of The article supported on the flange of the upper end of the article support pin by lowering the position of the flange of the upper end of the article support pin until it is lower than the tip of the inserted article transport mechanism. And an elevating mechanism for a vacuum device, comprising: a member to be transferred to the tip of the article conveying mechanism.
【００１４】[0014]
【作用】二段に昇降する物品載置台と物品支持ピンの動
作を規定する部材とによって、従来例の昇降機構に使用
されていた昇降ピンを皆無としており、これによって真
空チャンバの下方は簡素化され、存在するのは物品載置
台の昇降支持体用の金属ベローズとエヤシリンダのみと
なる。With the article mounting table that moves up and down in two steps and the member that regulates the operation of the article support pins, the lifting pins used in the lifting mechanism of the conventional example are eliminated, and the lower part of the vacuum chamber is simplified. Therefore, only the metal bellows and the air cylinder for the lifting support of the article mounting table are present.
【００１５】[0015]
【実施例】以下、本発明の実施例による真空装置用昇降
機構について図面を参照して説明する。図１は実施例の
基板昇降機構１１が組み込まれたプラズマＣＶＤ装置１
０の側断面図であり、図２は図１における［２］−
［２］線方向の平面図である。なお、図１は基板昇降機
構１１を理解し易い断面図としており、図２における
［１］−［１］線方向の断面を示す。プラズマＣＶＤ装
置としての基本的な構成、作用は図９で説明した従来例
のプラズマＣＶＤ装置２０と同様であるので、以下主と
して、異なる基板昇降機構１１について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An elevating mechanism for a vacuum device according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a plasma CVD apparatus 1 incorporating a substrate lifting mechanism 11 of the embodiment.
2 is a side sectional view of FIG. 0, and FIG.
[2] It is a top view of a line direction. Note that FIG. 1 is a cross-sectional view that makes it easy to understand the substrate elevating mechanism 11, and shows a cross-section taken along line [1]-[1] in FIG. Since the basic configuration and operation of the plasma CVD apparatus are the same as those of the conventional plasma CVD apparatus 20 described in FIG. 9, a different substrate elevating mechanism 11 will be mainly described below.
【００１６】基板昇降機構１１は基板Ｓが載置される基
板載置台３４と、その周縁部に配置された基板支持ピン
４１と、基板支持ピン４１の直下となる真空チャンバ１
２の底面部分に設けられたコイルばね４７とからなって
いる。The substrate elevating mechanism 11 includes a substrate mounting table 34 on which a substrate S is mounted, substrate supporting pins 41 arranged on the periphery of the substrate mounting table 34, and a vacuum chamber 1 immediately below the substrate supporting pins 41.
2 and a coil spring 47 provided on the bottom surface portion.
【００１７】基板載置台３４は真空チャンバ１２の筐体
１３の底面部分を下方から挿入され図示しないエヤシリ
ンダによって二段に昇降する昇降支持筒３１に固定され
ており、支持筒３１と筐体１３との間の気密化のため
に、昇降支持筒３１を囲むようにフランジ付き金属ベロ
ーズ３３が設けられ、Ｏ−リング３５を介して筐体１３
の下面に取り付けられている。The substrate mounting table 34 is fixed to an elevating and lowering support cylinder 31 which is inserted from the bottom of the housing 13 of the vacuum chamber 12 from below and moves up and down in two steps by an air cylinder (not shown). A metal bellows 33 with a flange is provided so as to surround the elevating and lowering support cylinder 31 for airtightness between the housing 13 and the housing 13 via an O-ring 35.
Is attached to the underside of.
【００１８】基板載置台３４の周縁部には上端部に鍔４
２、下端部に鍔４３を有する４本の基板支持ピン４１が
対称において上下に緩く挿通して設けられ、基板載置台
３４の上昇位置において、基板支持ピン４１は鍔４２を
基板載置台３４に形成された座ぐりに嵌入させて垂下さ
れる。そして基板Ｓは４本の基板支持ピン４１の鍔４２
を覆うように載置される。A flange 4 is provided at the upper end of the peripheral edge of the substrate mounting table 34.
2. Four substrate support pins 41 having a flange 43 at the lower end are symmetrically and loosely inserted vertically, and at the raised position of the substrate mounting table 34, the substrate support pins 41 move the collar 42 to the substrate mounting table 34. It fits into the formed spot facing and hangs down. The board S is a collar 42 of four board support pins 41.
It is placed so that it covers.
【００１９】また、４本の基板支持ピン４１それぞれの
直下において、真空チャンバ１２の筐体１３の底面部分
にはばね孔４９を設けてコイルばね４７が上下方向に伸
縮するように嵌入されており、脚部４６をコイルばね４
７内に挿入させたピン受け４５がコイルばね４７の上端
に載置されている。Immediately below each of the four substrate support pins 41, a spring hole 49 is provided in the bottom surface portion of the casing 13 of the vacuum chamber 12, and a coil spring 47 is fitted so as to expand and contract in the vertical direction. , The leg 46 to the coil spring 4
The pin receiver 45 inserted into the coil spring 7 is placed on the upper end of the coil spring 47.
【００２０】筐体１３の壁面部分には隣接する図示しな
い搬送チャンバに設置された搬送ロボットのハンド３９
によって基板Ｓを搬出入するための開口１８が設けら
れ、搬出入時以外はゲート弁１９によって密閉されてい
る。A transfer robot hand 39 installed in a transfer chamber (not shown) adjacent to the wall surface of the housing 13.
Is provided with an opening 18 for loading and unloading the substrate S, and is closed by a gate valve 19 except when loading and unloading.
【００２１】上述した以外の、昇降機構１１とは関連の
ない絶縁フランジ２６、電極フランジ２４、及びこれら
に取り付けられている各構成要素は図９に示した従来例
のプラズマＣＶＤ装置２０と同様に構成され作用するの
で、同じ符号を付して説明は省略する。Other than the above, the insulating flange 26, the electrode flange 24, and the components attached to these, which are not related to the lifting mechanism 11, are similar to those of the conventional plasma CVD apparatus 20 shown in FIG. Since they are configured and operate, the same reference numerals are given and description thereof is omitted.
【００２２】基板Ｓに所定の膜厚の薄膜が形成されると
基板Ｓは真空チャンバ１２から搬出され、新しい基板Ｓ
が搬入されて成膜が継続されるが、基板Ｓの搬出に際し
ての実施例の昇降機構１１の動作を以下に説明する。す
なわち、その動作は図３のＡ、Ｂ、図４のＡ、Ｂ、およ
び図４のＢにおける［５］−［５］線方向の矢視の断面
を示す図５に示されている。なお、図３のＡは図１に対
応するが、図３のＢ以降の図では、動作に関係しない構
成要素は簡略化して示している。When a thin film having a predetermined thickness is formed on the substrate S, the substrate S is unloaded from the vacuum chamber 12 and a new substrate S is formed.
Although the film is carried in and the film formation is continued, the operation of the lifting mechanism 11 of the embodiment when carrying out the substrate S will be described below. That is, the operation is shown in FIG. 5 which shows a cross section taken along line [5]-[5] of FIGS. 3A, 3B, 4A and 4B, and 4B. 3A corresponds to FIG. 1, but in FIG. 3B and subsequent drawings, constituent elements not related to the operation are shown in a simplified manner.
【００２３】図３のＡでは、基板昇降機構１１の基板載
置台３４はプラズマＣＶＤによる基板への成膜時の位
置、すなわち上昇位置にある。図３のＡの状態から昇降
支持筒３１が下降され基板載置台３４は一段目の下降を
行うが、図３のＢに示すように、基板支持ピン４１は下
端がピン受け４５に接して下降を停止され、基板Ｓは基
板支持ピン４１の鍔４２に支持されて残り、下降された
基板載置台３４との間に間隙ｇ1 が生じる。次いで図４
のＡを参照し、隣接する搬送チャンバとの間のゲート弁
１９が開とされて、搬送ロボットのハンド３９が開口１
９から挿入され、間隙ｇ2 を進んで基板Ｓの直下に至り
停止される。In FIG. 3A, the substrate mounting table 34 of the substrate elevating mechanism 11 is in the position when the film is formed on the substrate by plasma CVD, that is, in the raised position. The elevator support cylinder 31 is lowered from the state of FIG. 3A, and the substrate mounting table 34 is lowered by the first step. However, as shown in FIG. 3B, the substrate support pin 41 is lowered with its lower end in contact with the pin receiver 45. Then, the substrate S remains supported by the collar 42 of the substrate support pin 41, and a gap g 1 is formed between the substrate S and the lowered substrate mounting table 34. Then FIG.
2A, the gate valve 19 between the adjacent transfer chambers is opened, and the hand 39 of the transfer robot is opened 1
It is inserted from 9, and goes through the gap g 2 to reach directly below the substrate S and is stopped.
【００２４】続いて、基板載置台３４が二段目の下降を
行うが、図４のＢと図５を参照し、基板支持ピン４１の
下端部の鍔４３に基板載置台３４の下面が当接して基板
支持ピン４１を押し下げる。従って、基板支持ピン４１
の下端がピン受け４５を押し下げコイルばね４７を圧縮
するので、基板支持ピン４１も下降される。この下降に
よって基板支持ピン４１の上端部の鍔４２の位置が搬送
ロボットのハンド３９よりも下方になるので、基板支持
ピン４１の上端部の鍔４２に支持されていた基板Ｓはハ
ンド３９へ移載される。そして基板Ｓは搬送チャンバへ
運び出される。次いで新しい基板が送り込まれ、これを
載置された基板載置台３４は成膜時の上昇位置とされる
が、この搬入時における基板昇降機構１１の動作は搬出
時の場合と丁度逆の順に行われる。Subsequently, the substrate mounting table 34 descends to the second stage, and referring to FIGS. 4B and 5, the lower surface of the substrate mounting table 34 contacts the lower end flange 43 of the substrate support pin 41. The substrate support pins 41 are pushed down by contact. Therefore, the substrate support pin 41
Since the lower end of pushes down the pin receiver 45 and compresses the coil spring 47, the substrate support pin 41 is also lowered. Due to this lowering, the position of the collar 42 at the upper end of the substrate support pin 41 becomes lower than the hand 39 of the transfer robot, so that the substrate S supported by the collar 42 at the upper end of the substrate support pin 41 moves to the hand 39. Listed. Then, the substrate S is carried out to the transfer chamber. Next, a new substrate is fed, and the substrate mounting table 34 on which the new substrate is mounted is set to the raised position during film formation. The operation of the substrate elevating mechanism 11 at the time of loading is performed in the order just opposite to that at the time of unloading. Be seen.
【００２５】そして、本実施例の昇降機構１１は従来例
の基板昇降機構２１が要していた昇降ピン６１用の多く
の金属ベローズとエヤシリンダを皆無とし、真空チャン
バ１２の下方に存在するのは基板載置台３４の昇降支持
筒３１用のフランジ付き金属ベローズ３３とエヤシリン
ダのみとしているので、メンテナンスの作業性に優れ、
潜在的なリークポイントが減少し、真空チャンバ１２の
小型化、製造コストの低下の観点からも極めて好ましい
ものになっている。The elevating mechanism 11 of this embodiment does not have many metal bellows and air cylinders for the elevating pins 61, which are required for the substrate elevating mechanism 21 of the conventional example, and exists below the vacuum chamber 12. Since only the metal bellows 33 with a flange for the lifting support cylinder 31 of the substrate platform 34 and the air cylinder are used, the workability of maintenance is excellent,
The potential leak point is reduced, which is extremely preferable from the viewpoints of downsizing of the vacuum chamber 12 and reduction of manufacturing cost.
【００２６】以上、本発明の実施例について説明した
が、勿論、本発明はこれに限られることなく、本発明の
技術的思想に基づいて種々の変形が可能である。Although the embodiments of the present invention have been described above, of course, the present invention is not limited to these, and various modifications can be made based on the technical idea of the present invention.
【００２７】例えば本実施例においては、基板載置台３
４の二段の昇降に組み合わせるばねとしてコイルばね４
７を採用したが、これ以外のばね、例えば板ばね、トー
ションばね等を用いてもよい。For example, in this embodiment, the substrate mounting table 3
Coil spring 4 as a spring to be combined with two steps of 4
However, other springs such as leaf springs and torsion springs may be used.
【００２８】また、本実施例においては、エヤシリンダ
により基板載置台３４を二段に昇降するようにしている
が、駆動手段としてモータを用いて無段階に昇降するよ
うにしてもよい。In the present embodiment, the substrate mounting table 34 is moved up and down in two steps by the air cylinder, but it may be moved up and down steplessly by using a motor as the driving means.
【００２９】また、本実施例においては、４本の基板支
持ピン４１のそれぞれにコイルばね４７を設けたが、例
えば、図１に対応する図６の縦断面図に示すように、筐
体１３の底面部分に形成させた円環状の溝５９内に大き
い径のコイルばね５７を嵌入させ、４本の基板支持ピン
４１をコイルばね５７の円周上で受けるようにしてもよ
い。コイルばね５７には円環状のピン受け５５が設けら
れる。図６においてコイルばね５７以外の要素は図１に
示したプラズマＣＶＤ装置１０と同様であるので同一の
符号を付して説明は省略する。In the present embodiment, the coil springs 47 are provided on each of the four substrate support pins 41. For example, as shown in the vertical sectional view of FIG. 6 corresponding to FIG. A large diameter coil spring 57 may be fitted in an annular groove 59 formed on the bottom surface of the coil spring 57 to receive the four substrate support pins 41 on the circumference of the coil spring 57. The coil spring 57 is provided with an annular pin receiver 55. In FIG. 6, elements other than the coil spring 57 are similar to those of the plasma CVD apparatus 10 shown in FIG.
【００３０】また、本実施例においては、筐体１３の底
面部分にばね孔４９を設けてコイルばね４７を嵌入させ
たが、ばね孔４９は必ずしも必要とせず、例えば底面上
に直接コイルばね４７を固定してもよい。Further, in the present embodiment, the spring hole 49 is provided in the bottom surface portion of the housing 13 and the coil spring 47 is fitted therein, but the spring hole 49 is not always necessary, and for example, the coil spring 47 is directly provided on the bottom surface. May be fixed.
【００３１】また、本実施例においては、基板支持ピン
４１を４本設けたが、３本または４本以上の基板支持ピ
ン４１として基板Ｓの搬出入に支障とならないように配
置してもよい。Further, although four substrate support pins 41 are provided in the present embodiment, three or four or more substrate support pins 41 may be arranged so as not to interfere with the loading and unloading of the substrate S. .
【００３２】また、本実施例においては、基板支持ピン
４１の上端部の鍔４２を基板載置台３４の座ぐりに嵌入
させて基板Ｓを基板載置台３４と当接させるようにした
が、例えば上端部の鍔４２の形状を変更することによっ
て基板Ｓと基板載置台３４との間に間隙を設けるように
してもよい。Further, in this embodiment, the flange 42 at the upper end portion of the substrate support pin 41 is fitted into the counterbore of the substrate mounting table 34 to bring the substrate S into contact with the substrate mounting table 34. A gap may be provided between the substrate S and the substrate mounting table 34 by changing the shape of the flange 42 at the upper end portion.
【００３３】また、本実施例においては、昇降させる対
象物品として基板Ｓを取り上げたが、基板Ｓ以外の真空
装置内で昇降される全ての物品が対象となる。例えば、
基板Ｓに所定のパターン形状の薄膜を形成させる場合、
その形状に切り抜かれたマスク板Ｍを基板Ｓに重ね合わ
せて成膜操作が行われるが、成膜後に基板Ｓを搬出する
には先ずマスク板Ｍを基板Ｓから上方へ上昇させること
が必要である。In this embodiment, the substrate S is taken up as the object to be raised and lowered, but all articles other than the substrate S that are raised and lowered in the vacuum apparatus are targets. For example,
When a thin film having a predetermined pattern shape is formed on the substrate S,
The mask plate M cut out in that shape is superposed on the substrate S to perform the film forming operation. However, in order to carry out the substrate S after the film formation, it is necessary to first raise the mask plate M from the substrate S. is there.
【００３４】図７は基板昇降機構１１のほかにマスク板
昇降機構９１を設けたプラズマＣＶＤ装置７０の縦断面
図であり、図８は図７における［８］−［８］線方向の
平面図である。なお、図７は基板昇降機構１１とマスク
板昇降機構９１とを理解し易い断面図としており、図８
における［７］−［７］線方向の断面を示す。すなわ
ち、基板昇降機構１１の外側にマスク昇降機構９１が設
けられている。マスク板昇降機構９１は対向して配設し
た二段に昇降する２本の昇降ロッド７１上に、円環状の
マスク板載置台７４が固定されている。また、マスク板
載置台７４上において、真空チャンバ７２の中心から基
板支持ピン４１に向う角度と同一角度に基板昇降機構１
１の基板支持ピン４１と同様な４本のマスク板支持ピン
８１を配置し、４本のマスク板支持ピン８１の直下とな
る真空チャンバ７２の筐体７３の底面部分には、基板支
持ピン４１に対するコイルばね４７と同様な、マスク板
支持ピン８１に対するコイルばね８７が設けられてい
る。このようにして基板Ｓとは独立してマスク板Ｍが昇
降される。マスク板Ｍの搬出入には筐体７３の壁面部分
に専用の開口を設けてもよく、基板Ｓを搬出入する開口
７８を兼用して搬出入することもできる。勿論、所定の
期間は基板Ｓの交換毎にマスク板Ｍを交換せず、基板Ｓ
の交換時にはマスク板Ｍを単に昇降させるような使用も
可能である。これ以外の構成要素は図１に示したプラズ
マＣＶＤ装置１０と同様であるので、説明は省略する。FIG. 7 is a vertical sectional view of a plasma CVD apparatus 70 provided with a mask plate elevating mechanism 91 in addition to the substrate elevating mechanism 11, and FIG. 8 is a plan view taken along line [8]-[8] in FIG. Is. 7 is a cross-sectional view for easy understanding of the substrate elevating mechanism 11 and the mask plate elevating mechanism 91.
[7]-[7] line direction in. That is, the mask elevating mechanism 91 is provided outside the substrate elevating mechanism 11. The mask plate elevating mechanism 91 has an annular mask plate mounting table 74 fixed on two elevating rods 71 arranged facing each other and moving up and down in two stages. Further, on the mask plate mounting table 74, the substrate elevating mechanism 1 is placed at the same angle as the angle from the center of the vacuum chamber 72 to the substrate support pin 41.
The four mask plate support pins 81 similar to the substrate support pins 41 of No. 1 are arranged, and the substrate support pins 41 are provided on the bottom surface portion of the casing 73 of the vacuum chamber 72 which is directly below the four mask plate support pins 81. A coil spring 87 is provided for the mask plate support pin 81 similar to the coil spring 47 for the mask plate support pin 81. In this way, the mask plate M is moved up and down independently of the substrate S. The mask plate M may be carried in and out by providing a dedicated opening in the wall surface portion of the housing 73, and the substrate S may also be carried in and out by using the opening 78. Of course, during a predetermined period, the mask plate M is not replaced every time the substrate S is replaced,
It is also possible to use the mask plate M by simply moving it up and down when replacing. The other constituents are the same as those of the plasma CVD apparatus 10 shown in FIG.
【００３５】また、本実施例においては、真空装置とし
てプラズマＣＶＤ装置を取り上げたが、これ以外の真空
装置、例えば真空蒸着装置、スパッタ装置、エッチング
装置、イオン注入装置、その他各種の真空装置に本発明
の昇降機構を適用することができる。Further, in this embodiment, the plasma CVD apparatus is taken as the vacuum apparatus, but other vacuum apparatuses such as a vacuum vapor deposition apparatus, a sputtering apparatus, an etching apparatus, an ion implantation apparatus, and various other vacuum apparatuses can be used. The lifting mechanism of the invention can be applied.
【００３６】[0036]
【発明の効果】以上述べたように、本発明の真空装置用
昇降機構によれば、従来の昇降機構が真空チャンバの下
方に要していた昇降ピン用の多くの金属ベローズ、エヤ
シリンダを皆無とし得るので、メンテナンス作業が容易
になりＯーリング等によるシール箇所、すなわち潜在的
なリークポイントが減少して信頼性が高まり、かつ全体
的にコンパクトな設計が可能で、製造コストも低下させ
得る。As described above, according to the elevating mechanism for a vacuum device of the present invention, many metal bellows and air cylinders for elevating pins, which the conventional elevating mechanism requires below the vacuum chamber, are eliminated. As a result, maintenance work is facilitated, a sealing point by an O-ring or the like, that is, a potential leak point is reduced, reliability is improved, and a compact design is possible as a whole, and the manufacturing cost can be reduced.
【図１】実施例の基板昇降機構が組み込まれたプラズマ
ＣＶＤ装置の縦断面図である。FIG. 1 is a vertical cross-sectional view of a plasma CVD apparatus incorporating a substrate lifting mechanism according to an embodiment.
【図２】図１における［２］−［２］線方向の平面図で
ある。FIG. 2 is a plan view taken along the line [2]-[2] in FIG.
【図３】図４と共に実施例の基板昇降機構の動作を示す
縦断面図である。FIG. 3 is a vertical cross-sectional view showing the operation of the substrate lifting mechanism of the embodiment together with FIG.
【図４】図３と共に実施例の基板昇降機構の動作を示す
縦断面図である。FIG. 4 is a vertical sectional view showing the operation of the substrate elevating mechanism of the embodiment together with FIG.
【図５】図４のＢにおける［５］−［５］線方向の縦断
面図である。5 is a vertical cross-sectional view taken along line [5]-[5] of FIG. 4B.
【図６】コイルばねの変形例を示す縦断面図であり、図
１に対応する。6 is a vertical cross-sectional view showing a modified example of the coil spring, which corresponds to FIG.
【図７】基板昇降機構とマスク板昇降機構とが組み込ま
れたプラズマＣＶＤ装置の縦断面図であり、図１に対応
する。7 is a vertical cross-sectional view of a plasma CVD apparatus incorporating a substrate elevating mechanism and a mask plate elevating mechanism, which corresponds to FIG.
【図８】図７における［８］−［８］線方向の平面図で
ある。FIG. 8 is a plan view taken along line [8]-[8] in FIG.
【図９】従来例の基板昇降機構が組み込まれたプラズマ
ＣＶＤ装置の縦断面図である。FIG. 9 is a vertical cross-sectional view of a plasma CVD apparatus in which a conventional substrate lifting mechanism is incorporated.
【図１０】図１１と共に従来例の基板昇降機構の動作を
示す縦断面図である。FIG. 10 is a vertical cross-sectional view showing the operation of the conventional substrate lifting mechanism together with FIG.
【図１１】図１０と共に従来例の基板昇降機構の動作を
示す縦断面図である。11 is a vertical cross-sectional view showing the operation of the conventional substrate lifting mechanism together with FIG.
【図１２】図１１のＢにおける［１２］−［１２］線方
向の縦断面図である。12 is a vertical cross-sectional view taken along the line [12]-[12] of FIG. 11B.
１０ プラズマＣＶＤ装置 １１ 基板昇降機構 １２ 真空チャンバ １３ 筐体 １９ ゲート弁 ３１ 昇降支持筒 ３３ フランジ付き金属ベローズ ３４ 基板載置台 ４１ 基板支持ピン ４２ 鍔 ４３ 鍔 ４５ ピン受け ４７ コイルばね ４９ ばね孔 Ｓ 基板 10 Plasma CVD Device 11 Substrate Elevating Mechanism 12 Vacuum Chamber 13 Enclosure 19 Gate Valve 31 Elevating Support Cylinder 33 Flanged Metal Bellows 34 Substrate Placement Table 41 Substrate Support Pin 42 Tsuba 43 Pin Tsuba 45 Coil Spring 49 Spring Hole S Substrate
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/205 Ｈ０１Ｌ 21/205 21/68 21/68 Ｎ (72)発明者 森 勝彦 神奈川県茅ケ崎市萩園2500番地 日本真空 技術株式会社内 (72)発明者 清水 康男 神奈川県茅ケ崎市萩園2500番地 日本真空 技術株式会社内Continuation of front page (51) Int.Cl. 6 Identification number Office reference number FI Technical display location H01L 21/205 H01L 21/205 21/68 21/68 N (72) Inventor Katsuhiko Mori 2500 Hagien, Chigasaki City, Kanagawa Prefecture Address Japan Vacuum Technology Co., Ltd. (72) Inventor Yasuo Shimizu 2500 Hagien, Chigasaki City, Kanagawa Japan Vacuum Technology Co., Ltd.
Claims (3)
て二段に昇降する昇降支持体に固定された物品載置台
と、該物品載置台の周縁部の等角度間隔となる箇所にお
いて上下方向に遊嵌され、該物品載置台の上面側となる
上端部と下面側となる下端部とに鍔を有し、真空処理中
において物品が載置される前記物品載置台の上昇位置で
は、前記上端部の鍔を前記物品載置台に近接又は当接さ
せて垂下している複数の物品支持ピンと、前記物品載置
台の一段目の下降時には前記物品支持ピンの下降を停止
させて前記物品支持ピンの前記上端部の鍔に支持される
前記物品と下降された前記物品載置台との間に物品搬送
機構の先端支持部が挿入される間隙を形成させ、前記物
品載置台の二段目の下降時には共に下降される前記物品
支持ピンの前記上端部の鍔の位置を挿入されている前記
物品搬送機構の先端支持部より低くなるまで下降させる
ことによって前記物品支持ピンの前記上端部の鍔に支持
されている前記物品を前記物品搬送機構の先端支持部に
移載させる部材とからなることを特徴とする真空装置用
昇降機構。1. An article placing table fixed to an elevating support which is inserted from the bottom surface of a vacuum chamber into the inside thereof and ascends and descends in two steps, and a vertical direction at a position at an equal angular interval of a peripheral portion of the article placing table. It is loosely fitted, has upper and lower end portions on the upper surface side and lower end portion on the lower surface side of the article mounting table, and has the upper end at a raised position of the article mounting table on which an article is mounted during vacuum processing. A plurality of article support pins that hang down by bringing the flange of the part close to or in contact with the article placing table, and when the article placing table is lowered for the first step, the article supporting pins are stopped from descending to move the article supporting pins. A gap is formed between the article supported by the flange of the upper end portion and the lowered article loading table so that the tip support portion of the article transport mechanism is inserted, and when the second step of the article loading table is lowered. The upper end of the article support pin lowered together By lowering the position of the collar to a position lower than the tip supporting portion of the inserted article conveying mechanism so that the article supported by the collar at the upper end of the article supporting pin is supported by the tip of the article conveying mechanism. An elevating mechanism for a vacuum device, comprising: a member to be transferred to a unit.
けられた上下方向への伸縮機能を有するばねであり、前
記物品載置台の一段目の下降時における前記物品支持ピ
ンの下降の停止は前記ばねへの前記物品支持ピンの下端
部の当接によって生じ、前記物品載置台の二段目の下降
時における前記物品支持ピンの下降は前記物品支持ピン
の下端部が当接している前記ばねを圧縮して行われる請
求項１に記載の真空装置用昇降機構。2. The member is a spring which is provided directly below the article support pin and has a function of expanding and contracting in the vertical direction, and the stop of the descending of the article supporting pin when the first stage of the article placing table is descended. The lower end of the article support pin is brought into contact with the spring, and the lowering of the article support pin when the second stage of the article placing table descends is caused by the lower end of the article support pin contacting the spring. The elevating mechanism for a vacuum device according to claim 1, which is performed by compressing.
る請求項１または請求項２に記載の真空装置用昇降機
構。3. The elevating mechanism for a vacuum device according to claim 1, wherein a heater is built in the article mounting table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18481295A JPH0913172A (en) | 1995-06-28 | 1995-06-28 | Lifting mechanism for vacuum device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18481295A JPH0913172A (en) | 1995-06-28 | 1995-06-28 | Lifting mechanism for vacuum device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0913172A true JPH0913172A (en) | 1997-01-14 |
Family
ID=16159726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18481295A Pending JPH0913172A (en) | 1995-06-28 | 1995-06-28 | Lifting mechanism for vacuum device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0913172A (en) |
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| WO1999066351A1 (en) * | 1998-06-18 | 1999-12-23 | Hamamatsu Photonics K.K. | Method of organic film deposition |
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-
1995
- 1995-06-28 JP JP18481295A patent/JPH0913172A/en active Pending
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