TW201933442A - Shielding plate assembly and semiconductor processing apparatus and method - Google Patents

Abstract

Provided in the present disclosure is a shielding plate assembly and a semiconductor processing apparatus and method. The shielding plate assembly comprises a connecting member and a shielding pressure plate, wherein the connecting member is used for enabling the shielding pressure plate to move above a base and cover a first location of a support surface of the base or a second location that does not overlap, in the vertical direction, with the support surface of the base; an edge portion of the shielding pressure plate is located at a first location of said shielding pressure plate, and when the base is located at a cooling location, said base makes contact with an edge region of an upper surface of a workpiece to be processed that is carried by the base. Using the shielding plate assembly provided in the present disclosure, the surfaces of workpieces to be processed may all be deposited thereon with a thin film during processing; and meanwhile, the workpieces to be processed may be effectively and highly efficiently cooled, and productivity may thus be increased.

Description

Mask plate assembly, semiconductor processing device and method

Embodiments of the present disclosure relate to a shield disk assembly, a semiconductor processing apparatus, and a method.

Physical Vapor Deposition (PVD) technology is the use of physical methods under vacuum conditions to vaporize the surface of a material source (solid or liquid) into gaseous atoms, molecules or parts of ionization into ions, and through low pressure gas (or plasma) Procedure, a technique for depositing a thin film with a specific function on the surface of a substrate. At present, physical vapor deposition technology can be used to deposit not only metal films, alloy films, but also compounds, ceramics, semiconductors, and polymer films.

The performance of the physical vapor deposition device itself directly affects the quality and yield of the deposited film layer. With the increasing requirements for the accuracy, quality and yield of the film layers of various devices, the performance of the physical vapor deposition device itself is improved. Has a continuous drive.

According to an embodiment of the present disclosure, a shielding plate assembly includes a connecting member and a shielding platen, wherein the connecting member is used to move the shielding platen above the base and cover a first surface of the support surface of the base. Position, or a second position that does not overlap with the support surface of the base in the vertical direction; when the edge of the shielding platen is in the first position and the base is in the cooling position, the shielding The edge portion of the platen is in contact with the edge region of the upper surface of the workpiece to be processed carried by the base.

In some examples, the shielding platen is movably connected to the connecting member to separate the edge portion from the workpiece when the base is lower than the cooling position; when the base is raised to the cooling position, In the program, the base plate is supported by the shielding platen, so that the edge portion presses the edge region of the workpiece to be processed.

In some examples, a positioning hole penetrating the connecting member in a vertical direction is provided in the connecting member; a positioning convex portion is provided on an upper surface of the shielding platen, and the positioning convex portion cooperates with the positioning hole, When the base is lower than the cooling position, the shielding platen is hung on the connecting member through the positioning protrusion; in the procedure of raising the base to the cooling position and supporting the shielding platen, , Allowing the positioning protrusion to move up relative to the positioning hole.

In some examples, the positioning hole is a tapered hole, and the diameter of the tapered hole gradually decreases from top to bottom.

In some examples, the positioning convex portion includes a mating portion, the mating portion is tapered, and when the base is lower than the cooling position, an outer peripheral wall of the mating portion is matched with a hole wall of the tapered hole.

In some examples, the positioning hole is a through hole, and a step portion is provided on the hole wall of the through hole; the positioning convex portion includes a mating portion, and when the base is lower than the cooling position, at least the mating portion A part is stacked on the stepped portion.

In some examples, the positioning convex portion further includes a columnar extension portion, the extension portion is vertically arranged, and an upper end of the extension portion is connected to the mating portion; a lower end of the extension portion is connected to the shielding platen; and, the extension portion The outer diameter of the portion is smaller than the minimum diameter of the tapered hole.

In some examples, a rotation mechanism is further included, the rotation mechanism includes: a rotation shaft, which is vertically disposed on one side of the base and is connected to the connection member; a driving source for driving the rotation shaft to rotate to make the connection The component can be rotated to the first position or the second position about the rotation axis.

In some examples, the shielding platen includes a platen body, and an annular convex portion is formed on the lower surface edge region of the platen body as the edge portion, the annular convex portion is a closed ring, and along the shielding platen, The circumferential convex portion is provided with a plurality of sub-convex portions, and the plurality of sub-convex portions are arranged at intervals along the circumferential direction of the shielding platen.

In some examples, the shielding platen includes a platen body, and an outer peripheral wall of the platen body is formed with an annular convex portion that is convex with respect to a lower surface of the platen body to serve as the edge portion; The annular convex portion is a closed ring, and is disposed along the circumferential direction of the shielding platen; or, the annular convex portion includes a plurality of sub-convex portions, and the plurality of sub-convex portions are disposed at intervals along the circumferential direction of the shielding platen.

As another technical solution, the present disclosure also provides a semiconductor processing device including a cavity, the cavity including a base and the above-mentioned shielding disk assembly provided by the disclosure; a back-blow pipe is provided in the base, and the back-blow pipe is used for The back blowing gas is introduced into the gap between the support surface of the base and the lower surface of the workpiece to be processed; the base is liftable to be able to move to the cooling position or loading position or process position; the loading and unloading The position is lower than the cooling position; the process position is higher than the cooling position.

In some examples, the chamber further includes: a stop ring, which is disposed on the base and surrounds the support surface, for limiting the position of the workpiece to be processed on the base; a shield, which surrounds It is arranged inside the side wall of the chamber; a shielding ring is used to cover the gap between the stop ring and the shield when the base is in the process position; after the base is lowered from the process position, the shield The ring is supported by the shield.

In some examples, a shielding disk library is further provided. The shielding disk library is disposed on one side of the chamber and communicates with the interior of the chamber, and is configured to accommodate the shielding when the shielding platen is located at the second position. Platen.

As another technical solution, the present disclosure also provides a semiconductor processing method for processing a workpiece using the above-mentioned semiconductor processing apparatus provided by the present disclosure. The semiconductor processing method includes: a process processing step for maintaining the shielding platen at the second Position, and raise the base to the process position, so as to process the entire upper surface of the workpiece to be processed; cooling step, stop the process treatment, lower the base from the process position to the loading and unloading position, and The blocking platen is moved from the second position to the first position, and then the base is raised to the cooling position, so that the edge portion of the blocking platen is aligned with the edge region of the upper surface of the workpiece to be processed carried by the base. Contact, and then use the back blowing pipe to pass back blowing gas into the gap between the support surface of the base and the lower surface of the workpiece to be processed.

In some examples, in the cooling step, the height of the cooling position is set such that: during the procedure of the base rising to the cooling position, the base can hold the shielding platen so that the shielding platen Relative to the connecting member movably connected thereto, the edge part of the shielding platen is pressed against the edge area of the upper surface of the workpiece to be moved.

In some examples, in the process processing step, the process processing includes a physical vapor deposition process.

In the technical solutions of the shielding plate assembly, the semiconductor processing device, and the method provided in the embodiments of the present disclosure, the shielding platen is moved to a second position that does not overlap with the support surface of the base in the vertical direction by the connecting member, so that the workpiece can be processed. The workpiece surface is completely unobstructed, so that a thin film can be deposited on the surface of the workpiece to be processed during the manufacturing process; at the same time, the edge portion of the blocking platen is located at the first position covering the supporting surface of the base plate, and the base plate is When in the cooling position, it is in contact with the edge area of the upper surface of the workpiece to be processed carried by the base, so that when the back blowing gas is passed into the gap between the support surface of the base and the lower surface of the workpiece, the processed workpiece is guaranteed. The workpiece can be fixed on the base and will not be blown away, so that the workpiece to be processed can be effectively and efficiently cooled, and the productivity can be improved.

In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are a part of embodiments of the present invention, but not all the embodiments. Based on the described embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative labor shall fall within the protection scope of the present invention.

Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meanings understood by those with ordinary skills in the field to which this disclosure belongs. The terms "first", "second" and the like used in this disclosure do not indicate any order, quantity, or importance, but are only used to distinguish different components. Words such as "including" or "including" mean that the element or item appearing before the word covers the element or item appearing after the word and the equivalent thereof without excluding other elements or items.

In the following, some embodiments disclosed according to the present invention will be further described in detail. In the description disclosed in the present invention, the supporting surface of the base may refer to a plane of the base far from the bottom wall of the chamber. Defining a support surface as such a plane can better illustrate the positional relationship between other components and the support surface. In addition, when the base is mounted on the semiconductor processing device, it may be configured to move in a direction perpendicular to the support surface. In the direction perpendicular to the support surface, that is, in the vertical direction, the direction from the opposite side of the support surface of the base to the support surface is called the "upward" direction, and the direction from the support surface to the opposite side of the support surface of the base This is called the "downward" direction. Thus, the various positional relationships modified by "upper" and "lower", or "top" and "bottom" have clear meanings. For example, upper surface, lower surface, rising, falling, top wall, and bottom wall. As another example, for the two surfaces of the workpiece to be processed, the surface facing away from the base is called "upper surface", and the surface facing the base is called "lower surface". In addition, in a direction parallel to the support surface, that is, in a horizontal direction, a direction from the edge of the base to the center is referred to as an “inward” direction, and a direction from the center of the base to the edge is referred to as an “outward” "Direction. Therefore, the relative positional relationship modified by "inside" and "outside" also has a clear meaning. For example, "inside" and "outside." In addition, it should be noted that the above terms indicating orientation are merely exemplary and indicate the phase position relationship of each component. For the combination of parts in the various devices or equipment disclosed by the present invention or the entire device or equipment can be rotated as a whole. angle.

The workpiece to be processed in the disclosure of the present invention may be, for example, a tray for supporting a wafer to be deposited, or a separate wafer to be deposited, or a combined structure in which wafers are attached to the tray. According to the disclosed embodiments of the present invention, There are no particular restrictions.

In the PVD process, a process gas including an inert gas and a reaction gas is passed into the process chamber, and a direct current or radio frequency power is applied to the target material to excite the gas in the chamber to form a plasma and bombard the target material. Target particles fall on the surface of the workpiece to form a thin film. While the target particles are deposited on the surface of the workpiece to be processed, they will also be deposited on the chamber wall and other components. In order to prevent the sputtered material from being directly deposited on the chamber wall and other components, a process kit is usually added to the interior of the PVD chamber to protect the inner wall of the chamber. To ensure the process results, when the deposited film on the process components reaches a certain thickness, the process chamber needs to be opened to replace the process components inside.

The process chamber needs to be kept in a vacuum state all the time. Only when the target material or process component is replaced, it will be opened. After the replacement is completed, the chamber is restored to the vacuum state. The target exposed to the atmosphere will react with the atmosphere, causing its surface to be oxidized. Therefore, in the initial stage of chamber recovery, the surface of the target is defective and cannot be used for normal manufacturing processes. Generally, a shutter disk can be used to cover the base, and then a high temperature aging (Burn in) process can be performed, so that the defective part of the target surface is sputtered onto the shield disk. After the defective part has been sputtered away, the masking disc is removed, and the normal process can be performed.

Figures 1 and 2 show schematic diagrams of the shielding disc being moved into and out of the chamber, respectively. Fig. 1 is a schematic perspective view of the shielding plate when it is located above the base; and Fig. 2 is a schematic plan view of the shielding plate when it is removed from above the base. As shown in FIGS. 1 and 2, the shielding plate 121 is located on the shielding plate bracket 122. The shielding plate bracket 122 is connected to the bracket rotation shaft 123 and can be rotated around the bracket by the bracket rotation shaft 123. The shaft 123 is rotated to enable the shutter plate 121 to move into or out of the chamber 10 together with the shutter plate bracket 122. After the shielding plate 121 is moved into the chamber 10, it is located above the base 124 so as to cover the base during the high-temperature aging process. FIG. 1 also shows a base mounting screw 125.

PVD technology mainly adopts Electrostatic Chuck (ESC) or mechanical chuck to support the workpiece to be processed. In the PVD process of the wafer, the workpiece is generally heated, and it is difficult to transfer the heat in the vacuum. In order to extract the heat in the processed workpiece, an electrostatic chuck or a mechanical chuck is generally used to fix the processed workpiece, and at the same time, a back blowing gas is sent to the back of the processed workpiece to achieve cooling of the wafer.

FIG. 3 is a schematic cross-sectional view of a DC magnetron sputtering device 1. The DC magnetron sputtering apparatus 1 has a chamber body 100, and a space defined by the chamber body 100 constitutes a chamber 10. For example, the chamber body 100 may include a bottom wall 1001 and a side wall 1002. A base 101 is provided in the chamber 10, and the base 101 may be disposed on the bottom wall 1001. The base 101 can be a mechanical chuck that carries the workpiece 102 to be processed. The base 101 can be raised and lowered so as to be able to be raised to a process position or lowered to a loading and unloading position. When the base 101 is in the process position, a cover ring 103 with a certain weight is used to press the edge area of the upper surface of the workpiece 102, and the workpiece 102 is mechanically fixed to the base 101. Sputtering process. The shield 104 surrounds at least a portion of the side wall 1002 of the cavity and is connected to the side wall 1002 of the cavity, and may be configured to support the pressure ring 103 when the base 101 is lowered during the self-processing position. The target 105 is sealed on the vacuum chamber body 100. The target 105 can be placed on the top of the chamber 10 and can be electrically connected to a DC power source (not shown) provided outside the chamber 10. The DC power source can be The target 105 is biased. The insulating material 107 and the target material 105 form a closed chamber, and the chamber is filled with deionized water 106. The insulating material 107 can be made of a material with high insulation properties, such as glass fiber and resin composite materials, and further, for example, G10 can be used. During sputtering, a direct current (DC) power source will apply a bias voltage to the target 105, making it negative pressure relative to the grounded cavity body 100, thereby stimulating an argon discharge to generate a plasma, and positively charged plasma. Argon ions are attracted to the negatively-biased target 105. When the energy of the argon ions is sufficiently high, metal atoms will escape from the target surface and be deposited on the workpiece 102 to be processed. The above description is based on the introduction of argon, but other process gases such as nitrogen can also be passed. FIG. 3 also shows the magnetron 108 and a motor 109 that drives the magnetron 108 to move. The magnetron 108 is disposed above the target 105 and can scan the surface of the target 105 under the driving of the motor 109 so as to collect the plasma under the target 105.

In addition, during sputtering, a certain amount of back-blow gas can be passed through the pipe 110 located at the center of the base 101 to the back of the workpiece 102, so that the heat of the workpiece 102 is transferred to the base 101 by means of gas heat conduction. As a result, cooling of the workpiece 102 is achieved.

However, in the PVD device in the packaging field, since the pressing ring 103 presses the upper surface edge region of the workpiece 102, which makes it impossible to deposit a thin film during the deposition on the upper surface edge region of the workpiece 102. (Such as electroplating), therefore, the method of fixing and cooling the workpiece 102 used in the above-mentioned PVD device has great limitations in application. And electrostatic chucks cannot be widely applied to PVD devices in the packaging field due to their high cost and technical complexity.

FIG. 4 shows an assembly structure diagram of a backless pedestal. This backless pedestal structure can make a thin film be deposited on the wafer edge. The base 126 may include a base body 1261, a top plate 1262 provided on the base body 1261. The stop ring 127 located on the edge of the top plate 1262 is also shown in FIG. 4. The base body 1261, the top plate 1262, and the stop ring 127 can be assembled together to support the stop wafer. During normal processing, the chip can be placed on the top plate 1262. The susceptor 126 is a carrier of a wafer. The top plate 1262 is the uppermost part of the base 126 and can be fixed on the base body 1261 by screws. The stop ring 127 can be fixed on the top plate 1262 by screws to limit the position of the wafer on the top plate 1262.

Figure 5 shows a schematic of the structure of the chamber without backflush. A stop ring 127 is provided on the edge of the base 116, and a shielding member 104 is further included in the chamber 10. The shielding member 104 surrounds and is connected to the sidewall of the cavity, and can be configured to support the shielding ring 128. The shielding ring 128 can be lifted during the process of raising the base 126 to the process position, and is supported by the shield 104 when the base 126 is lowered in the self-process position. The shielding ring 128 is used to cover the gap between the stop ring 127 and the shield 104 when the base 126 is in the manufacturing position. The specific structure of the shielding ring 128 will be described in detail later. In the normal manufacturing process, the shielding ring 128 only serves as a shielding function, and does not press the edge of the workpiece 102 to be processed, so that the surface of the workpiece 102 can be completely deposited with a thin film. However, since the workpiece 102 is only placed on the base 126 and is not fixed, the cooling of the workpiece 102 cannot be achieved by back blowing. In order to solve the problem of this type of cavity cooling, the current cooling of the workpiece 102 is currently implemented by the following methods: first, a process step is performed to deposit a thin film of a certain thickness on the workpiece 102; after the temperature of the workpiece 102 rises, Stop the process step and perform the cooling step, that is, directly fill a large amount of gas into the chamber, so that the chamber pressure reaches 1 Torr or higher, and maintain it for a period of time, so that the workpiece 102 and the top plate 1262 are heat exchanged, thereby achieving Cooling of the workpiece 102 to be processed; then the gas is removed. Continue the above process steps, repeat the above cooling step after the temperature rises, and then loop to complete the film deposition at a certain temperature.

However, in the above-mentioned semiconductor processing method, the cooling speed of gas-filled cooling is slow, and the gas pressure on the back of the wafer reaches at most 1 Torr, and a long-term holding process is required to sufficiently cool the wafer. If it is charged to a higher pressure, the inflation and extraction procedures will take more time, affecting the overall productivity. In addition, this procedure makes the vacuum condensing pump load in the chamber too large, and shortens the vacuum pump regeneration cycle.

In order to solve the above-mentioned problems, the embodiments of the present disclosure provide a shielding disk assembly, a semiconductor processing device, and a method that can cause a thin film to be deposited on the entire area of the surface of a processed workpiece and effectively cool the processed workpiece and improve the productivity.

FIG. 6A illustrates a shielding plate assembly 11 according to an embodiment of the disclosure, including a connecting member 1112 and a shielding platen 113, wherein the connecting member 1112 is used to move the shielding platen 113 to the base 116 (FIG. 6A) Not shown in the figure, refer to the top of the base 116 shown in Figure 10), and cover the support surface 11601 (not shown in Figure 6A, refer to the support surface shown in Figure 9B) 11601) at the first position L1 (not shown in Fig. 6A, reference can be made to the first position L1 shown in Fig. 11), so that the defective part of the target surface can be covered during the high-temperature aging process of the target. Sputtered onto the pressure plate 113. Specifically, the projection of the blocking platen 113 on the support surface 11601 of the base 116 completely covers the support surface 11601. Alternatively, the connecting member 1112 is used to move the blocking platen 113 to a second position L2 that does not overlap with the support surface 11601 of the base 116 in the vertical direction (not shown in FIG. 6A, and reference may be made to FIG. 9A). Second position L2), so that the support surface 11601 of the base 116 is not blocked, so that during the thin film deposition process, a thin film can be deposited on the entire area of the surface of the workpiece on the bearing surface.

As shown in FIG. 6A, in some examples, the shielding plate assembly 11 further includes a rotating mechanism including a rotating shaft 111 and a driving source (not shown in the figure), wherein the rotating shaft 111 is vertically disposed on the base 116. On one side and connected to the connecting member 1112. Optionally, the connecting member 1112 is cantilevered. The driving source is used to drive the rotation shaft 111 to rotate, so that the connecting member 1112 can rotate around the rotation shaft 111 to the first position L1 or the second position L2. FIG. 6A illustrates the rotation direction of the rotation shaft 111, but in practical applications, the rotation direction of the rotation shaft 111 is not limited to that shown in the figure.

The edge portion E of the blocking platen 113 blocks the edge of the platen 113 when the blocking platen 113 is in the first position L1 and the base 116 is in the cooling position (refer to the position of the base plate 116 shown in FIG. 11). The portion E is in contact with the edge area of the upper surface of the workpiece being placed on the supporting surface 11601 of the base 116, and a back blow can be passed into the gap between the supporting surface 11601 of the base 116 and the lower surface of the workpiece. When the gas is used, it is ensured that the workpiece to be processed can be fixed on the base 116 and will not be blown away, so that the workpiece to be processed can be effectively and efficiently cooled, and the productivity can be improved.

In this embodiment, the shielding platen 113 includes a platen body, which is in the shape of a straight plate, and an annular convex portion 1132 is formed in the edge region of the lower surface 11302 of the platen body to serve as the aforementioned edge portion E. When the disk 113 is in the first position L1 and the base 116 is in the cooling position, the lower surface 11320 of the annular convex portion 1132 is in contact with the edge area of the upper surface of the workpiece on the support surface 11601 of the base 116, and is located at The recessed portion 0113 inside the annular convex portion 1132 does not contact the workpiece 102 to be processed. The formation of the recessed portion 0113 is beneficial for protecting the upper surface of the workpiece to be processed and avoiding damage to the effective area of the workpiece.

In this embodiment, the above-mentioned annular convex portion 1132 is a closed ring shape, and is disposed along a circumferential direction of the blocking platen 113. Of course, in practical applications, the annular convex portion 1132 may also adopt a discontinuous annular structure. For example, the annular convex portion 1132 includes a plurality of sub-convex portions, and the plurality of sub-convex portions are arranged at intervals along the circumferential direction of the shield platen 113.

As shown in FIG. 6A, in some examples, in order to facilitate production and reduce the occupied space of the blocking platen 113, the upper surface 11301 and the lower surface 11302 of the blocking platen 113 may be flat, but the present invention is not limited to this. this. For example, the upper surface 11301 and the lower surface 11302 may be curved surfaces or curved surfaces.

As shown in FIG. 6A and FIG. 6B, in some examples, the blocking platen 113 is movably connected to the connecting member 1112 to be lower than the cooling position of the base 116 (refer to where the base 116 shown in FIG. 10 is located). Position), the edge portion E (that is, the annular convex portion 1132) of the blocking platen 113 is separated from the workpiece, so that the blocking platen 113 can still move with the connecting member 1112; or, at the base 116 In the procedure of ascending to the cooling position, the base plate 116 is lifted up to block the pressure plate 113, so that the edge portion E is pressed against the edge area of the workpiece. In other words, the blocking platen 113 will rise a certain distance with the base 116, so that the blocking platen 113 can press the workpiece with its own gravity.

The following specifically describes the specific manner in which the shielding platen 113 is movably connected to the connecting member 1112. Specifically, as shown in FIG. 6B, the connecting member 1112 is provided with a positioning hole 1120 penetrating the connecting member 1112 in the vertical direction; the upper surface 11301 of the blocking platen 113 is provided with a positioning protrusion 1131, and the positioning protrusion The portion 1131 cooperates with the positioning hole 1120, so that when the base 116 is lower than the cooling position, the blocking platen 113 is hung on the connecting member 1112 through the positioning protrusion 1131; the base 116 is raised to the cooling position and held up In the procedure for covering the pressure plate 113, the positioning convex portion 1131 is allowed to move upward relative to the positioning hole 1120. The structure of the above active connection is relatively simple and easy to make.

Preferably, the positioning hole 1120 is a tapered hole, and the diameter of the tapered hole gradually decreases from top to bottom. As long as the size of the positioning protrusion 1131 is larger than the minimum diameter of the tapered hole, the positioning protrusion 1131 can be hung on the connecting member 1112. The structure of the tapered hole is simple, easy to manufacture, and convenient for blocking the centering of the pressure plate 113.

Further, as shown in FIG. 6A, in some examples, the positioning convex portion 1131 includes a mating portion 11311, which is tapered. When the base 116 is lower than the cooling position, the outer peripheral wall and the cone of the mating portion 11311 The hole wall of the hole cooperates, so that the centering and movable functions of the cover plate 113 can be realized. Specifically, the inclination angle of the outer peripheral wall of the mating portion 11311 is the same as the inclination angle of the hole wall of the tapered hole. In this way, the position of the blocking platen 113 in the positioning hole 1120 can be unique, thereby ensuring that the blocking platen 113 is not biased when it presses the workpiece to be processed, and it is beneficial for the blocking platen 113 to be located at the first position L1. Just above the base 116.

In addition, in order to allow the shielding platen 113 to have a certain vertical distance from the connection member 1112 to allow the shielding platen 113 to be lifted and moved upward by the base 116, the positioning protrusion 1131 further includes an extension portion 11312, which extends The portion 11312 is vertically arranged, and the upper end of the extension portion 11312 is connected to the mating portion 11311; the lower end of the extension portion 11312 is connected to the shielding platen 113; and the outer diameter of the extension portion 11312 is smaller than the minimum diameter of the ascending cone hole so that the extension portion 11312 Able to pass through the tapered hole.

Optionally, the manner in which the extension portion 11312 is connected to the mating portion 11311 and the blocking platen 113 may be welding, buckle, screw connection, or the like.

It should be noted that, in this embodiment, the positioning hole 1120 is a tapered hole, but the present invention is not limited thereto. In practical applications, the positioning hole 1120 may also adopt any other structure. For example, the positioning hole 1120 is A through hole is provided with a step portion on the hole wall of the through hole; when the base is lower than the cooling position, at least a part of the mating portion 11311 is stacked on the step portion.

As shown in FIG. 6B, in some examples, in order to facilitate the blocking platen 113 to maintain balance when it is stationary or rotating, the positioning protrusion 1131 may be located at a center position of the blocking platen 113.

It should be noted that, in this embodiment, the platen body is straight, but the present invention is not limited to this. In actual application, as shown in FIG. 7A, in some examples, the platen body may also be An arc-shaped plate is formed, and the arc-shaped plate is recessed in a direction away from the support surface 11601 of the base 116.

It should also be noted that, in this embodiment, an annular convex portion 1132 is formed in the edge region of the lower surface 11302 of the platen body as the above-mentioned edge portion E, but the present invention is not limited to this. In practical applications, As shown in FIG. 7B, in some examples, an outer peripheral wall of the platen body is formed with an annular convex portion 1132 that is convex with respect to the lower surface of the platen body to serve as an edge portion E. Specifically, the platen body has an arc-shaped plate shape, and the arc-shaped plate is recessed in a direction away from the support surface 11601 of the base 116 to form a recessed portion 0113. The annular convex portion 1132 protrudes from the outer peripheral wall of the platen body in a horizontal direction away from the center of the platen body. Because the platen body has an arc-shaped plate shape, this makes the lower surface 11320 of the annular convex portion 1132 lower than the lower surface 11302 (arc concave surface) of the platen body, so that it can contact the edge area of the upper surface of the workpiece. Of course, in practical applications, the platen body can also be straight. The annular convex portion 1132 is provided on the outer peripheral wall of the platen body, and is convex relative to the lower surface of the platen body. This can also be achieved with the workpiece being processed. The edge areas of the upper surface are in contact.

In practical applications, the above-mentioned annular convex portion 1132 is a closed ring, and is arranged along the circumferential direction of the blocking platen 113; or, the annular convex portion 1132 includes a plurality of sub-convex portions, and the plural sub-convex portions are along the circumferential direction of the blocking platen 113. Interval setting.

It should be noted that, the shape of the blocking platen 113 is not limited to the examples listed above. For example, the blocking platen 113 may further include a conical plate including a recessed portion and an edge convex portion, as long as the edge portion of the blocking platen 113 and the The edge area of the upper surface of the workpiece to be processed is in contact with the rest without contacting the workpiece.

It should also be noted that the structures and matching methods of the positioning holes 1120 and the positioning protrusions 1131 are not limited to the cases listed in the above examples. For example, as shown in FIG. 8A, the positioning holes 1120 are tapered holes; The part 11311 and the extension part 11312 are integrally formed to form a tapered cylinder, and the outer diameter of the tapered cylinder gradually decreases from top to bottom. When the base 116 is lower than the cooling position, the outer peripheral wall of the mating part 11311 and the taper hole The wall of the hole is completely fitted; the extension 11312 is located below the connecting member 1112, so that the shielding platen 113 and the connecting member 1112 can have a certain vertical distance.

For another example, as shown in FIG. 8B, the positioning hole 1120 is a through hole; the positioning convex portion 1131 includes a mating portion 11311 and an extension portion 11312, both of which are columnar, wherein the outer diameter of the mating portion 11311 is larger than that of the through hole. Diameter, and the mating portion 11311 is stacked on the upper surface of the connecting member 1112; the outer diameter of the extension portion 11312 is smaller than the diameter of the through hole; The positioning hole 1120 is connected to the shielding platen 113 so that the shielding platen 113 and the connecting member 1112 can have a certain vertical distance.

For another example, as shown in FIG. 8C, the positioning hole 1120 is a tapered hole; the positioning protrusion 1131 includes a first mating portion 11311 and a second mating portion 11312. The first mating portion 11311 is columnar and has an outer diameter greater than The largest diameter of the tapered hole, and the first mating portion 11311 is stacked on the upper surface of the connecting member 1112; the second mating portion 11312 is in a cone shape, and when the base 116 is lower than the cooling position, the upper portion of the second mating portion 11312 The outer peripheral wall of the tapered hole completely fits with the hole wall of the tapered hole; the rest of the second mating portion 11312 is located below the connecting member 1112, and the upper end of the second mating portion 11312 is connected to the first mating portion 11311. The lower end is connected to the shielding platen 113 so that the shielding platen 113 and the connecting member 1112 can have a certain vertical distance.

In summary, the shielding plate assembly provided in the embodiment of the present disclosure moves the shielding platen to a second position that does not overlap the supporting surface of the base in the vertical direction through the connecting member, so that the surface of the workpiece to be processed is not completely covered. Masking, so that a thin film can be deposited on the surface of the workpiece during the manufacturing process; at the same time, the edge portion of the masking platen is in the first position where the masking platen is located on the supporting surface of the base, and the base is in the cooling position with The edge area of the upper surface of the workpiece being carried by the base is in contact with each other, so that when the back blowing gas is passed into the gap between the support surface of the base and the lower surface of the workpiece, the workpiece can be fixed on the base. On the seat, it will not be blown away, so that the workpiece to be processed can be effectively and efficiently cooled, and the productivity can be increased.

As another technical solution, the embodiment of the present disclosure further provides a semiconductor processing device. For example, the semiconductor processing apparatus may be a physical vapor deposition apparatus.

In this embodiment, as shown in FIG. 9A, the semiconductor processing apparatus includes a chamber 10 including a base 116 and a shielding plate assembly 11 provided in any one of the above embodiments of the present disclosure. Among them, a back-blow pipe 110 is provided in the base 116, and the back-blow pipe 110 is used to pass back-blow gas into the gap between the support surface 11601 of the base 116 and the lower surface of the workpiece 102; the base 116 is Liftable, that is, it can be moved in a direction perpendicular to the support surface 11601 to be able to move to a cooling position (not shown in Fig. 9A, refer to the position of the base 116 shown in Fig. 11) or the loading and unloading position (Not shown in Figure 9A, refer to the position of the base 116 shown in Figure 10) or process position (the location of the base 116 shown in Figure 9A); the loading and unloading position is lower than the cooling position; The process position is higher than the cooling position. In the drawings of the embodiments of the present disclosure, a lifting mechanism capable of moving the base 116 in a direction perpendicular to the support surface 11601 is omitted.

It should be noted that the back-blowing pipeline 110 may be provided according to requirements, and is not limited to that shown in the drawings, and back-blowing may be implemented. In the embodiment of the present disclosure, the back blowing gas flowing in the back blowing pipeline is used to cool the workpiece 102 as an example. Of course, in practical applications, according to the needs of different processes, the back blowing gas can also be used to heat the workpiece. 102.

It should be noted that the shielding plate assembly provided in the embodiments of the present disclosure is not limited to being applied to a physical vapor deposition device, and may also be applied to other semiconductor manufacturing processes.

As shown in FIG. 9A, in some examples, the semiconductor processing apparatus further includes a shielding disc library 010 disposed on one side of the chamber 10 and communicating with the inside of the chamber 10, and is used for positioning the shielding platen 113 at the second position. In L2, the cover platen 113 is accommodated.

As shown in FIG. 9A, in some examples, the chamber 10 further includes a stop ring 127, a shield 104, and a shield ring 128, wherein the stop ring 127 is disposed on the base 116 and surrounds the support surface 11601. The periphery is used to define the position of the workpiece 102 on the base 116. For example, the portion of the stop ring 127 adjacent to the workpiece 102 placed on the base 116 may be stepped to facilitate the definition of the workpiece 102. When the workpiece 102 is placed in the stop ring 127, the surface of the workpiece 102 far from the base 116 is completely exposed, that is, the stop ring 127 does not cover any part of the workpiece 102. Therefore, it is advantageous to deposit a thin film on the entire area of the upper surface of the workpiece 102 to be processed.

The shielding ring 128 is used to cover the gap between the stop ring 127 and the shield 104 when the base 116 is in the process position. After the base 116 is lowered from the process position, the shield ring 128 is supported by the shield 104. In addition, a process area is surrounded by the target 105, the shield 104, the shielding ring 128, and the workpiece 102 to be processed, and the plasma is generated in this process area. The shielding ring 128 and the shield 104 and the like play a role in forming a relatively closed reaction environment and preventing the sediment from contaminating the inner wall of the chamber. For example, the inner diameter of the shielding ring 128 is larger than the diameter of the workpiece 102 and smaller than the outer diameter of the stop ring 127. When the shielding ring 128 is pressed on the limit ring 127, the gap between the shielding ring 128 and the shielding member 104 can be within a limited range to facilitate the sealing of the plasma when the shielding ring 128 is lifted up.

In the example shown in FIG. 9B, a schematic perspective view of the base 116 and the stop ring 127 is shown. The base 116 may include a base body 1161, a top plate 1162 provided on the base body 1161. FIG. 9B also shows a stop ring 127 located on the edge of the top plate 1162. The base body 1161, the top plate 1162, and the stop ring 127 can be assembled together to support the workpiece 102 to be limited. In a normal manufacturing process, the workpiece 102 to be processed may be placed above the top plate 1162. The base 116 is a carrier of the workpiece 102 to be processed. The top plate 1162 is the uppermost part of the base 116 and can be fixed on the base body 1161 by screws. The stop ring 127 can be fixed on the top plate 1162 by screws.

The semiconductor processing device provided by this disclosed embodiment can completely prevent the surface of the processed workpiece from being covered by using the above-mentioned shielding plate assembly provided by this disclosed embodiment, so that the entire surface of the processed workpiece can be deposited with a thin film during the manufacturing process. At the same time, when the back blowing gas is passed into the gap between the support surface of the base and the lower surface of the workpiece, the workpiece can be fixed on the base and will not be blown away, so that the treatment can be realized. Effective and efficient cooling of machined workpieces can increase productivity.

As another technical solution, the embodiment of the present disclosure also provides a semiconductor processing method, which can apply the semiconductor processing apparatus provided in any of the above embodiments to process the workpiece 102, but is not limited thereto. The semiconductor processing method includes: a process processing step, maintaining the blocking platen 113 at the second position L2, and raising the base 116 to the process position to process the entire surface of the workpiece 102 to be processed; a cooling step to stop the process Processing, lower the self-position position of the base plate 116 to the loading and unloading position, and move the blocking platen 113 from the second position L2 to the first position L1, and then raise the base plate 116 to the cooling position to block the edge of the platen 113 Part E is in contact with the edge area of the upper surface of the workpiece 102 carried by the base 116, and then the back blow pipe 110 is used to pass a back blow to the gap between the support surface 11601 of the base 116 and the lower surface of the workpiece 102. gas.

During the process step, the back-blowing pipe 110 is closed, otherwise the workpiece 102 will be blown off. In the thin film deposition process, the temperature of the workpiece 102 will rise quickly. When the upper temperature limit is reached, it needs to be switched to cooling. step.

Optionally, in the above process processing steps, the process processing includes a physical vapor deposition process.

Optionally, in the above cooling step, the height of the cooling position is set as follows: During the procedure of the base 116 rising to the cooling position, the base 116 can support the blocking platen 113 so that the blocking platen 113 is relatively The movably connected connecting member 1112 moves upward, so that the edge portion E of the blocking platen 113 is pressed against the edge region of the upper surface of the workpiece 102 to be processed. In this way, the shielding platen 113 can press the workpiece 102 to be processed by its own gravity.

In some examples, the method further includes using a shielding pressure when performing a high-temperature aging process after replacing process components in the chamber 10 (for example, replacing at least one of the shield 104, the cover plate 108, and the stop ring 127 in the chamber). The plate 113 covers the base 116. Therefore, the blocking pressure plate 113 can integrate the functions of the pressure ring and the blocking plate, improve the performance of the device and simplify the device structure.

The steps related to the cooling process in the semiconductor processing method according to the embodiment of the disclosure are described above, and other steps such as depositing a thin film can refer to the conventional physical vapor deposition operation steps. In order to more clearly introduce the semiconductor processing method according to the embodiment of the present disclosure, an example of a semiconductor processing method applicable to the device is described in more detail below.

In the film deposition step, when the workpiece 102 is being processed, the base 116 supports the workpiece 102 to be raised to the processing position (as shown in FIG. 9A). The stop ring 127 restricts the left and right positions of the workpiece 102, and the shielding ring 128 It is used to block the sputtered target (such as metal) from entering the gas part of the chamber. The target 105 of the sputtered material is placed above the chamber 10. At this time, the blocking platen 113 is turned into the blocking plate with the rotation of the rotating shaft 111. Library 010.

In the back-blowing cooling step, as shown in FIG. 10, the base 116 is lowered to the loading and unloading position, the workpiece 102 is lowered with the base 116, and then the blocking platen 113 is turned over the workpiece 102 to be processed. Because the mounting and dismounting position of the base 116 is lower than its cooling position, it is possible to prevent the base 116 and the blocking platen 113 from interfering with each other.

After the above operation is completed, as shown in FIG. 11, the base 116 is raised to the cooling position. After the workpiece 102 is raised with the base 116, the blocking platen 113 is lifted up so that the blocking platen 113 faces the connecting member 1112. Move up a certain distance, so that the edge portion E of the blocking platen 113 is pressed against the edge area of the upper surface of the workpiece 102. At this time, the weight of the blocking platen 113 is pressed on the workpiece 102, and the back blowing pipe 110 can be used. Back-blow gas is passed into the gap between the support surface 11601 of the base 116 and the lower surface of the workpiece 102. For example, the weight of the shielding platen 1131 may be greater than the area of the workpiece 102 to be processed multiplied by the pressure of the gas on its back surface. For example, the gas pressure may be a pressure within 7 Torr, but is not limited thereto.

After the cooling is completed, the gas flow is stopped, and the base 116 is lowered with the workpiece 102 to be processed, and the cover plate 113 is also lowered with the base 116 until the cover plate 113 is hung on the connecting member 1112 (as shown in FIG. 10). As shown). Subsequently, the shielding platen 113 is transferred into the shielding plate library 010, and then the base 116 is raised again to the process position (as shown in FIG. 9A), and the thin film deposition process is continued. The above-mentioned step of depositing the thin film and the step of back-blow cooling are performed in this loop.

The following points need to be explained: (1) In the drawings of the disclosed embodiments of the present invention, only the structures related to the disclosed embodiments are involved, and other structures can refer to the general design. (2) In the case of no conflict, the present invention discloses that the features in the same embodiment and different embodiments can be combined with each other.

The above description is only an exemplary embodiment of the present invention, and is not intended to limit the protection scope of the present invention. The protection scope of the present invention is determined by the scope of the attached patent application.

E‧‧‧Edge

L1‧‧‧First position

L2‧‧‧Second position

1‧‧‧DC magnetron sputtering device

10‧‧‧ chamber

11‧‧‧Mask plate assembly

010‧‧‧blocks the library

100‧‧‧ chamber body

101, 116, 124, 126‧‧‧ base

102‧‧‧Processed workpiece

103‧‧‧Press ring

104‧‧‧shield

105‧‧‧Target

106‧‧‧ deionized water

107‧‧‧Insulation material

108‧‧‧Magnetron

109‧‧‧Motor

110‧‧‧pipe

111‧‧‧ rotation axis

113‧‧‧blocking platen

121‧‧‧Mask

122‧‧‧shield tray

123‧‧‧carriage rotation axis

125‧‧‧screw

127‧‧‧ stop ring

128‧‧‧Support block ring

0113‧‧‧Depression

1001‧‧‧ bottom wall

1002‧‧‧ side wall

1112‧‧‧Connecting parts

1120‧‧‧ Positioning hole

1131‧‧‧ positioning protrusion

1132‧‧‧Ring

1161, 1261‧‧‧ base body

1162, 1262‧‧‧ roof

11301‧‧‧ Covers the upper surface of the pressure plate

11302‧‧‧The lower surface of the platen body

11320‧‧‧ the lower surface of the annular projection

11311‧‧‧Matching Department

11312‧‧‧Extension

11601‧‧‧Support surface

In order to explain the technical solutions of the embodiments of the present invention more clearly, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present invention, but not limit the present invention. . Fig. 1 is a schematic diagram of a shielding disc being transferred into a chamber; Fig. 2 is a schematic diagram of a shielding disc being removed from the chamber; Fig. 3 is a schematic sectional view of a physical vapor deposition device; and Fig. 4 is a base (without back) FIG. 5 is a schematic cross-sectional view of another physical vapor deposition device; FIG. 6A is a schematic cross-sectional view of a shielding disk assembly according to an embodiment of the present disclosure; and FIG. 6B is a schematic view of an embodiment of the present disclosure. 7A is a schematic cross-sectional view of a shielding disc assembly according to an embodiment of the present disclosure; FIG. 7B is a cross-sectional view of a shielding disc assembly according to an embodiment of the present disclosure; 8A is a schematic cross-sectional view of a shutter plate assembly according to another embodiment of the present disclosure; FIG. 8B is a schematic cross-sectional view of a shutter plate assembly according to another embodiment of the present disclosure; FIG. 8C is another implementation according to the present disclosure; FIG. 9A is a schematic cross-sectional view of a semiconductor processing device according to an embodiment of the disclosure (a base (Located at the process position); FIG. 9B is a schematic diagram of a base of a semiconductor processing device (with a back-blow pipe) according to an embodiment of the disclosure; FIG. 10 is a schematic cross-sectional diagram of a semiconductor processing device according to an embodiment of the disclosure (The seat is in the loading and unloading position); and FIG. 11 is a schematic cross-sectional view of a semiconductor processing device according to an embodiment of the present disclosure (the base is in a cooling position).

Claims (16)

A shielding plate assembly is characterized in that it includes a connecting member and a shielding platen, wherein the connecting member is used for moving the shielding platen above a base and covering a first surface of the supporting surface of the base. Position, or a second position that does not overlap the support surface of the base in the vertical direction; when the edge portion of the shielding platen is at the first position and the base is located at a cooling position, An edge portion of the shielding platen is in contact with an edge region of an upper surface of a workpiece to be processed carried by the base. The shielding plate assembly according to item 1 of the scope of patent application, wherein the shielding plate is movably connected to the connecting member to separate the edge portion from the workpiece when the base is lower than the cooling position. ; In the procedure of raising the base to the cooling position, causing the base to support the blocking platen, so that the edge portion presses the edge area of the workpiece to be processed. The shielding plate assembly according to item 2 of the scope of patent application, wherein a positioning hole penetrating the connecting member in a vertical direction is provided in the connecting member; a positioning protrusion is provided on an upper surface of the shielding platen, and , The positioning convex portion cooperates with the positioning hole, so that when the base is lower than the cooling position, the shielding platen is hung on the connecting member through the positioning convex portion; the base is raised to the cooling Position, and in the process of holding up the cover platen, the positioning convex portion is allowed to move relative to the positioning hole. The shielding plate assembly according to item 3 of the scope of patent application, wherein the positioning hole is a tapered hole, and the diameter of the tapered hole gradually decreases from top to bottom. The shielding plate assembly according to item 4 of the scope of patent application, wherein the positioning convex portion includes a mating portion, the mating portion is tapered, and when the base is lower than the cooling position, the outer peripheral wall of the mating portion Cooperate with the hole wall of the tapered hole. The shielding disk assembly according to item 3 of the scope of patent application, wherein the positioning hole is a straight through hole, and a step portion is provided on the hole wall of the through hole; the positioning convex portion includes a matching portion, and When the seat is lower than the cooling position, at least a part of the mating portion is stacked on the step portion. The shielding plate assembly according to item 5 or item 6 of the patent application scope, wherein the positioning convex portion further includes a columnar extension portion which is vertically arranged, and an upper end of the extension portion is connected to the mating portion; The lower end of the extension is connected to the shielding platen; and the outer diameter of the extension is smaller than the minimum diameter of the tapered hole. The shielding disk assembly according to item 3 of the scope of patent application, further comprising a rotating mechanism, the rotating mechanism includes: a rotating shaft, which is vertically disposed on one side of the base and is connected to the connecting member; a driving source, It is used for driving the rotation shaft to rotate, so that the connecting member can rotate to the first position or the second position around the rotation axis. The shielding plate assembly according to item 1 of the patent application scope, wherein the shielding platen includes a platen body, and an annular convex portion is formed on the lower surface edge region of the platen body as the edge portion, and the annular convex portion It is a closed ring and is arranged along the circumferential direction of the shielding platen; or, the annular convex portion includes a plurality of sub-convex portions, and the plurality of sub-convex portions are arranged at intervals along the circumferential direction of the shielding platen. The shielding plate assembly according to item 1 of the scope of patent application, wherein the shielding platen includes a platen body, and an outer peripheral wall of the platen body is formed with an annular convex portion, and the annular convex portion is opposite to the platen body. The lower surface is convex to serve as the edge portion; the annular convex portion is a closed annular shape and is disposed along the circumferential direction of the blocking platen; or the annular convex portion includes a plurality of sub convex portions along the The circumferential interval of the blocking platen is set. A semiconductor processing device includes a cavity, which is characterized in that the cavity includes a base and the shielding plate assembly according to any one of claims 1 to 10 of the scope of patent application; the base is provided with a back A blow line, which is used to introduce a back blow gas into the gap between the support surface of the base and the lower surface of the workpiece; the base is liftable to be able to move to the cooling position or A loading and unloading position or a process position; the loading and unloading position is lower than the cooling position; the process position is higher than the cooling position. The semiconductor processing device according to item 11 of the scope of patent application, wherein the chamber further comprises: a stop ring, which is arranged on the base and surrounds the support surface to limit the workpiece to be processed A position on the base; a shielding member arranged around the inside of the side wall of the chamber; a shielding ring for shielding the gap between the stop ring and the shielding member when the base is in the process position ; After the base is lowered from the process position, the shielding ring is supported by the shield. The semiconductor processing device according to item 11 of the scope of patent application, further comprising a shielding disc library, the shielding disc library is disposed on one side of the chamber and communicates with the interior of the chamber for shielding the pressure plate. When in the second position, the shielding platen is accommodated. A semiconductor processing method, characterized in that a semiconductor workpiece is processed by using the semiconductor processing device according to any one of claims 11 to 13 of the scope of patent application, the semiconductor processing method includes: a process processing step to make the shielding The platen is maintained at the second position, and the base is raised to the process position to process the entire upper surface of the workpiece to be processed; a cooling step, the process is stopped, and the base is lowered from the process position To the loading and unloading position, and moving the blocking platen from the second position to the first position, and then raising the base to the cooling position, so that the edge portion of the blocking platen and the cover carried by the base The edge area of the upper surface of the processing workpiece is in contact, and then the back blowing gas is used to pass back blowing gas into the gap between the support surface of the base and the lower surface of the processed workpiece. The semiconductor processing method according to item 14 of the scope of patent application, wherein, in the cooling step, the height of the cooling position is set so that the base can be lifted during the procedure of the base rising to the cooling position. The shielding platen moves the shielding platen upward relative to the connecting member movably connected thereto, so that the edge portion of the shielding platen presses the edge region of the upper surface of the workpiece. The semiconductor processing method according to item 14 of the scope of patent application, wherein, in the process processing step, the process processing includes a physical vapor deposition process.