CN112011774B - Semiconductor equipment, semiconductor chamber thereof and semiconductor cooling method - Google Patents

Semiconductor equipment, semiconductor chamber thereof and semiconductor cooling method Download PDF

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Publication number
CN112011774B
CN112011774B CN202010863952.1A CN202010863952A CN112011774B CN 112011774 B CN112011774 B CN 112011774B CN 202010863952 A CN202010863952 A CN 202010863952A CN 112011774 B CN112011774 B CN 112011774B
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cooling
workpiece
semiconductor
rotary
bearing device
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CN112011774A (en
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赵可可
李冰
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses a semiconductor device, a semiconductor chamber thereof and a semiconductor cooling method, wherein the semiconductor chamber comprises a bearing device, a supporting piece and a rotary cooling piece, the bearing device is arranged in the semiconductor chamber and used for bearing a processed piece, and the bearing device can be lifted; the supporting piece penetrates through the bearing device and is used for supporting the workpiece when the workpiece is separated from the bearing device; the rotary cooling member is installed in the semiconductor chamber, and is configured to rotate to a side of the workpiece facing the carrying device or a side of the workpiece facing away from the carrying device when the temperature of the workpiece exceeds a preset temperature, and cool the workpiece. Above-mentioned technical scheme can solve when adopting thick aluminium to carry out sputtering technology at present, because of the sputter power increase, lead to the actual temperature that can appear the work piece in the course of working to be higher than the condition of technology temperature, be unfavorable for the problem that technology normally goes on.

Description

Semiconductor device, semiconductor chamber thereof and semiconductor cooling method
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a semiconductor device, a semiconductor chamber of the semiconductor device and a semiconductor cooling method.
Background
In semiconductor processing, a PVD (Physical vapor Deposition) process is a common processing method. In the PVD process, a magnetron is usually used to generate a magnetic field to increase the confinement capability of electrons, and meanwhile, a process gas is introduced into a chamber to apply a negative voltage to a target material such as an aluminum plate, so that the process gas is ionized to generate a plasma, the plasma impacts the target material to generate particles such as atoms or ions of the target material, and the particles are deposited on a workpiece such as a wafer to form a thin film on the workpiece.
At present, with the development of the technology, in order to improve the productivity, the thickness of the aluminum plate as the target material gradually becomes thicker, and under the condition that the thickness of the target material is increased, the sputtering power of the magnetron needs to be correspondingly increased, so that the temperature in the process chamber and the temperature of the workpiece to be processed are also increased, and the actual temperature of the workpiece to be processed is higher than the process temperature, which is not favorable for the normal process of the process.
Disclosure of Invention
The invention discloses a semiconductor device, a semiconductor chamber thereof and a semiconductor cooling method, which aim to solve the problem that the actual temperature of a processed workpiece is higher than the process temperature in the processing process and the normal operation of the process is not facilitated due to the fact that the sputtering power is increased when thick aluminum is adopted for sputtering at present.
In order to solve the problems, the invention adopts the following technical scheme:
in a first aspect, an embodiment of the present invention discloses a semiconductor chamber, which includes:
the bearing device is arranged in the semiconductor chamber and used for bearing a processed workpiece, and the bearing device can be lifted;
the support passes through the bearing device and is used for supporting the workpiece when the workpiece is separated from the bearing device;
and the rotary cooling piece is arranged in the semiconductor chamber and used for rotating to one side of the processed workpiece facing the bearing device or one side of the processed workpiece departing from the bearing device when the temperature of the processed workpiece exceeds a preset temperature and cooling the processed workpiece.
In a second aspect, an embodiment of the invention discloses a semiconductor device, which includes the semiconductor chamber.
In a third aspect, an embodiment of the present invention discloses a semiconductor cooling method applied to the semiconductor chamber, where the semiconductor cooling method includes:
in the process of carrying out a sputtering process on a workpiece to be processed, if the temperature of the workpiece to be processed is detected to exceed a preset temperature, controlling the bearing device to move along the bearing direction according to the position of the rotary cooling piece;
and if the height of the workpiece in the bearing direction is higher or lower than the height of the rotary cooling piece, controlling the rotary cooling piece to rotate to the side, facing the bearing device, of the workpiece or the side, facing away from the bearing device, of the workpiece, and blowing cooling gas to cool the workpiece.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the embodiment of the invention discloses a semiconductor chamber, wherein a workpiece to be processed can be accommodated in the semiconductor chamber and supported on a bearing device and/or a supporting piece, the bearing device can be lifted, and the supporting piece penetrates through the bearing device so as to support the workpiece to be processed when the workpiece to be processed is separated from the bearing device. The semiconductor cavity is equipped with rotatory cooling member, rotatory cooling member is installed in the semiconductor cavity, in the course of working of work piece, if the temperature of work piece is higher than when predetermineeing the temperature, can make the relative support piece of load-bearing device remove, so that the height that load-bearing device was located does not interfere the action of rotatory cooling member, produce the rotation action through making rotatory cooling member, can make rotatory cooling member rotate to one side of work piece orientation load-bearing device or one side that deviates from load-bearing device, and cool off the work piece, make the temperature reduction of work piece, guarantee that processing technology can continue normally to go on. Moreover, the efficiency of cooling the processed workpiece by adopting the semiconductor chamber is relatively high, and the processing efficiency can be further improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a semiconductor chamber according to an embodiment of the disclosure;
FIG. 2 is a schematic view of a cooling principle of a semiconductor chamber according to an embodiment of the present invention;
FIG. 3 is a schematic view of a rotary cooling element in a semiconductor chamber according to an embodiment of the present disclosure;
fig. 4 is a flowchart of a semiconductor cooling method according to an embodiment of the present invention.
Description of reference numerals:
100-a semiconductor chamber,
200-thimbles,
300-a carrying device,
400-rotary cooling piece, 410-cooling air hole, 420-cooling air passage, 430-circumferential communicating air passage, 440-radial communicating air passage,
500-the work piece,
600-magnetron device, 610-magnetron, 620-rotating member,
700-target material.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1-3, the embodiment of the invention discloses a semiconductor chamber that can receive and process a workpiece 500, and the semiconductor chamber 100 includes a support, a carrier 300, and a rotary cooling element 400.
The shape and volume of the semiconductor chamber 100 may be determined according to actual conditions. Of course, as shown in fig. 1, a target 700 for providing particles such as atoms or ions is also disposed in the semiconductor chamber 100, and the semiconductor chamber 100 may be provided with a support structure for supporting the target 700, and the support structure may be a step-like support structure.
The carrier 300 is disposed in the semiconductor chamber 100, and the carrier 300 can carry the work piece 500 during the processing of the work piece 500. The carrier 300 may be lifted, that is, the carrier 300 may move up and down in the carrying direction with respect to other components in the semiconductor chamber 100. Further, the carrying device 300 may be an electrostatic chuck, so as to provide a heating function for the workpiece 500 supported on the carrying device 300, so that the temperature of the workpiece 500 can meet a preset temperature, and then the efficient and reliable operation of the process is ensured. The preset temperature can be flexibly determined according to the actual situation of the sputtering process, so that the sputtering effect and the sputtering efficiency of the workpiece 500 are relatively high.
The support is disposed through the carrier 300, for example, a through hole may be disposed on the carrier 300, and the support may pass through the carrier 300 through the through hole, so that when the carrier 300 descends and the workpiece is separated from the carrier 300, the workpiece 500 can be supported by the support. Of course, the support may also be installed in the carrying device 300 and adopt a telescopic structure, which also ensures that when the workpiece 500 is separated from the carrying device 300, the support extends from the upper surface of the carrying device 300 to support the workpiece 500.
The rotary cooling member 400 is rotatably installed in the semiconductor chamber 100, and during the operation of the semiconductor chamber, it is generally required to first generate particles for forming a thin film in the semiconductor chamber 100, in order to prevent these particles from being deposited on the carrier 300 to adversely affect the structure and performance of the carrier 300, and prevent the particles from reacting with the surface of the carrier 300 to generate other particles, which may affect the normal operation of the physical vapor deposition process, before the work piece 500 is placed on the carrier 300, the carrier 300 may be generally shielded by the rotating cooling member 400, and after the workpiece 500 is placed above the carrier 300, the rotary cooling member 400 is removed from above the carrier 300, in the process of shielding the carrier 300, the carrier 300 can be moved according to the position of the rotary cooling element 400, so that the carrier 300 is located under the rotary cooling element 400.
In addition, the rotary cooling tool 400 in the semiconductor chamber according to the embodiment of the present invention can cool the workpiece 500, and specifically, the rotary cooling tool 400 may further include cooling holes 410, and when the temperature of the workpiece 500 exceeds a predetermined temperature, the rotary cooling tool 400 may be rotated to a side of the workpiece 500 facing the carrier 300 or a side of the workpiece 500 facing away from the carrier 300, so as to cool the workpiece 500. Of course, the rotary cooling member 400 may provide the cooling effect in other manners, for example, by providing a cooling medium inside the rotary cooling member 400, the temperature of the rotary cooling member 400 may be lowered, and the rotary cooling member 400 is located close to and at one side of the workpiece 500, so as to provide the cooling effect to the workpiece 500 by means of cold diffusion.
Specifically, the cooling air holes 410 may be ports of a cooling pipeline disposed on the rotary cooling member 400, that is, a cooling pipeline is additionally disposed on one side surface of the rotary cooling member 400, and in a case where the workpiece 500 needs to be cooled, a cooling gas is blown into the semiconductor chamber 100 through the cooling pipeline, and the cooling gas is blown from the cooling air holes 410 to the workpiece 500, so that the cooling efficiency of the workpiece 500 may be improved. Of course, the cooling air holes 410 may be formed in other configurations or in other manners on the rotary cooling element 400, which are not illustrated herein for brevity.
In addition, the kind of the cooling gas blown into the semiconductor chamber 100 from the cooling gas holes 410 may be the same as the kind of the process gas of the sputtering process in the semiconductor chamber 100, ensuring that the cooling gas does not have any adverse effect on the sputtering process.
More specifically, the rotary cooling element 400 may be formed by modifying an existing rotary arm in a process chamber, and the rotary arm may be the rotary cooling element by adding a cooling air hole to the existing rotary arm and providing a cooling pipeline for the cooling air hole, which may reduce the processing difficulty of the semiconductor chamber disclosed in the embodiment of the present invention and may reduce the modification cost.
In the semiconductor chamber, the workpiece 500 may be accommodated in the semiconductor chamber 100 and supported on the supporting device 300 and/or the supporting member, the supporting device 300 may be lifted, and the supporting member may pass through the supporting device 300 to support the workpiece 500 when the workpiece 500 is separated from the supporting device 300. The semiconductor chamber 100 is provided with the rotary cooling member 400, the rotary cooling member 400 is rotatably installed in the semiconductor chamber 100, in the processing process of the processed workpiece 500, if the temperature of the processed workpiece 500 is higher than the preset temperature, the bearing device 300 can be moved relative to the support, so that the height of the bearing device 300 does not interfere with the action of the rotary cooling member 400, the rotary cooling member 400 can be rotated to the side of the processed workpiece 500 facing the bearing device 300 or the side deviating from the bearing device 300 by rotating the rotary cooling member 400, the processed workpiece 500 is cooled, the temperature of the processed workpiece 500 is reduced, and the processing technology can be ensured to be continuously and normally performed. Moreover, the efficiency of cooling the workpiece 500 by using the semiconductor chamber 100 is relatively high, and the processing efficiency can be further improved.
Alternatively, the support includes at least three pins 200, and when the workpiece 500 is detached from the carrier 300, the three pins 200 can provide a relatively stable supporting function for the workpiece 500, and the support can be mounted on the bottom of the semiconductor chamber 100 together with the carrier 300. Correspondingly, at least three matching holes are formed in the carrier 300, and the carrier 300 can be ensured to move in the supporting direction of the supporting member by corresponding the at least three matching holes to the at least three ejector pins 200 one to one.
Specifically, the mating holes may be through holes, each of the ejector pins 200 may be fixed to the bottom of the semiconductor chamber 100, and the carrier 300 may be inserted through the ejector pins 200 and mounted on the bottom of the semiconductor chamber 100 through a driving mechanism, so that the carrier 300 can move relative to the semiconductor chamber 100 along the supporting direction of the support. Of course, as described above, the thimble 200 may have a telescopic structure, and in this case, the thimble 200 may be mounted in the carrier 300, so that when the carrier 300 moves, the thimble 200 may be caused to perform a telescopic operation, thereby ensuring that the thimble 200 can provide a stable and reliable supporting function for the workpiece 500.
As described above, the carrier 300 may be an electrostatic chuck, and when the workpiece 500 needs to be heated during the operation of the semiconductor chamber, the carrier 300 may be moved toward the workpiece 500, so that the carrier 300 can be attached to the workpiece 500, and the heat generated by the carrier 300 can be better transferred to the workpiece 500, thereby reducing heat loss, improving the heating efficiency of the workpiece 500, shortening the time for heating the workpiece 500 to the process temperature, and improving the processing efficiency. When the workpiece 500 needs to be cooled, the bearing device 300 can be moved in a direction away from the workpiece 500, so that the bearing device 300 is prevented from continuously heating the workpiece 500, and the rotary cooling piece 400 is ensured to provide a relatively effective cooling effect for the workpiece 500. Specifically, the component driving the carriage 300 to move may be a hydraulic cylinder, an electric cylinder, a linear motor, or the like.
Of course, the semiconductor chamber 100 may further include other components such as a magnetron device 600, a temperature detection portion, and an upper computer. The magnetron apparatus 600 may specifically include a magnetron 610 and a rotating member 620, the rotating member 620 may be mounted on the semiconductor chamber 100 by means of bolts or the like, the magnetron 610 is mounted on the rotating member 620, and in case that the rotating member 620 rotates, the magnetron 610 may rotate together with the rotating member 620. Specific parameters such as the model and power of the magnetron 610 may be determined according to actual conditions such as the material and thickness of the target 700. In the semiconductor chamber, the target 700 is located between the magnetron 600 and the workpiece 500, so that atomic or ionic particles generated from the target 700 may be deposited on the surface of the workpiece 500 to form a thin film after the process gas is introduced into the semiconductor chamber 100.
The temperature detection part can be specifically an infrared temperature sensor, which can detect the real-time temperature of the workpiece 500 and can transmit the real-time temperature of the workpiece 500 to an upper computer, the upper computer is a control device of a semiconductor chamber, in the processing process, when the temperature of the workpiece 500 exceeds a preset temperature, the magnetic control device 600 can be controlled to stop sputtering, the bearing device 300 is controlled to descend to prevent the height of the bearing device 300 from obstructing the rotation of the rotary cooling member 400, then the rotary cooling member 400 is controlled to rotate, the workpiece 500 is cooled by the cooling air hole 410, when the temperature of the workpiece 500 measured by the temperature sensor is equal to or less than the preset temperature, the rotary cooling member 400 is controlled to recover to the original position, the cooling work of the workpiece 500 is stopped, the bearing device 300 is enabled to ascend, and then the magnetic control device 600 is restarted, the deposition work is resumed and is circulated, so that the temperature of the workpiece 500 can basically linger around the preset temperature, and the sputtering work is efficiently and normally performed.
In addition, as described above, in the case where the workpiece 500 is detached from the carrier 300 and the workpiece 500 is supported on the support, the rotary cooling member 400 may be rotated to a side of the workpiece 500 facing the carrier 300 or away from the carrier 300. Alternatively, the cooling air holes 410 may be disposed below the rotary cooling member 400, so that in a process of cooling the workpiece 500, the rotary cooling member 400 may be rotated to a side of the workpiece 500 away from the carrier 300 to cool the workpiece 500. Moreover, the position of the rotary cooling member 400 can be designed according to the supporting height of the supporting member, the thickness of the workpiece 500 and other dimensions, so as to ensure that the height of the workpiece 500 supported on the carrying device 300 and/or the supporting member is lower than the height of the rotary cooling member 400, and further ensure that the rotary cooling member 400 can rotate to the side of the workpiece 500 departing from the carrying device 300.
Conversely, the rotary cooling member 400 may also be rotated to the side of the workpiece 500 facing the carrier 300, in which case the cooling air holes 410 may be disposed above the rotary cooling member 400, and the carrier 300 may be lowered to form a certain gap with the workpiece 500, so as to ensure that the rotary cooling member 400 can extend between the workpiece 500 and the carrier 300 to provide a cooling effect for the workpiece 500. In the case of the above-mentioned technical solution, the support member is required not to obstruct the rotary cooling member 400, for example, the support member may be relatively small in size, or the support member and the rotary cooling member 400 may be designed correspondingly to prevent the support member from obstructing the rotation of the rotary cooling member 400.
Optionally, in a case that the rotary cooling member 400 rotates to one side of the workpiece 500, a preset distance may be provided between the rotary cooling member 400 and the workpiece 500, optionally, the preset distance is between 3mm and 7mm, and by providing a certain distance between the rotary cooling member 400 and the workpiece 500, the cooling gas blown out from the cooling gas holes 410 can generate a certain diffusion effect, so that all parts on the workpiece 500 can be subjected to the purging effect of the cooling gas, and the overall cooling effect of the workpiece 500 is ensured to be substantially the same; moreover, by adopting the above technical solution, the space between the rotary cooling member 400 and the workpiece 500 is not too large, so that the cooling gas can move from the cooling gas holes 410 to the surface of the workpiece 500, and a certain cooling effect is provided for the workpiece 500, and the cooling gas does not blow out from the cooling gas holes 410, and when the cooling gas does not reach the position of the workpiece 500, the temperature of the cooling gas is the same as the temperature in the semiconductor chamber 100, or even the cooling gas is dissipated. More specifically, the interval between rotatory cooling member 400 and the work piece 500 is 5mm, and this can guarantee that the cooling efficiency of work piece 500 is relatively higher, and can guarantee that the cooling effect everywhere on the work piece 500 is the same basically, promotes the whole cooling effect of work piece 500.
Further, the rotary cooling member 400 disclosed in the embodiment of the present invention is provided with the cooling air holes 410, and when the temperature of the workpiece 500 exceeds a preset temperature, the carrier 300 can be lowered, and the workpiece 500 is supported on the support, and by rotating the rotary cooling member 400 between the workpiece 500 and the carrier 300, the cooling air is blown out through the cooling air holes 410 to cool the workpiece 500 and the carrier 300, so that both the workpiece 500 and the carrier 300 can be subjected to the cooling effect provided by the rotary cooling member 400.
Under the condition of adopting above-mentioned technical scheme, through making carrier device 300 and work piece 500 cooled down in the lump, can guarantee to leave the back at rotatory cooling piece 400, can not cause the temperature of work piece 500 to receive carrier device 300 to influence because of the temperature of carrier device 300 still is higher than preset temperature, and surpasss preset temperature again in short time, the invalid condition of cooling appears. Of course, in order to ensure that the cooling effect of the rotary cooling member 400 on the workpiece 500 and the carrier 300 is relatively good, the cooling holes 410 may be disposed on two opposite sides of the rotary cooling member 400.
Specifically, the cooling air holes 410 on the opposite sides of the rotary cooling element 400 may be formed by the same component, and the number and the size of the cooling air holes 410 on the opposite sides of the rotary cooling element 400 may be the same correspondingly. For example, the opposite sides of the rotary cooling member 400 may be provided with cooling pipelines, and each cooling pipeline is communicated with a cooling air source, so that when the rotary cooling member 400 rotates to a position between the workpiece 500 and the carrying device 300, the two sets of cooling air holes 410 may be used to cool the workpiece 500 and the carrying device 300 respectively, and it is ensured that the temperatures of the workpiece 500 and the carrying device 300 are both reduced to a preset temperature, or even reduced to below the preset temperature.
Further, the rotary cooling member 400 includes a cooling portion, the upper surface and the lower surface of the cooling portion are communicated through the cooling air holes 410, and the upper and lower positions of the cooling air holes 410 correspond to each other, so that the cooling effect provided by the rotary cooling member 400 for the carrying device 300 and the workpiece 500 respectively is substantially the same, and the cooled areas on the workpiece 500 and the carrying device 300 can be substantially the same, thereby ensuring that when the workpiece 500 is carried on the carrying device 300 again, the temperature of each part on the workpiece 500 is not greatly changed.
Moreover, when the workpiece 500 is supported on the support and the rotary cooling member 400 rotates to a position between the workpiece 500 and the carrier 300, the distance between the workpiece 500 and the carrier 300 and the rotary cooling member 400 may be equal, and in detail, the distance between the workpiece 500 and the upper surface of the cooling part and the distance between the carrier 300 and the lower surface of the cooling part are equal, in this case, among the cooling air holes 410 on the opposite sides of the rotary cooling member 400, the distance between the cooling air hole 410 facing the workpiece 500 and the workpiece 500 is equal to the distance between the cooling air hole 410 facing the carrier 300 and the carrier 300, so that the cooling effects provided by the cooling air holes 410 on the opposite sides of the rotary cooling member 400 for the carrier 300 and the workpiece 500 are further equalized, and the cooling time of the workpiece 500 and the carrier 300 is not much different, thereby further improving the overall cooling efficiency.
Specifically, the distance between the bearing device 300 and the rotary cooling piece 400 may be the same as the distance between the workpiece to be processed 500 and the rotary cooling piece 400, and is 5mm, in this case, it may be ensured that the cooling efficiency of the bearing device 300 and the workpiece to be processed 500 is relatively high, and it may be ensured that the cooling effect of each place on the two is substantially the same, so as to improve the overall cooling effect of the bearing device 300 and the workpiece to be processed 500.
In addition, in the case where the rotary cooling member 400 is rotated to a position between the work material 500 and the carrier 300, the centers of the work material 500, the carrier 300, and the cooling portion are coaxial, and in this case, the respective regions of the work material 500 and the carrier 300 extending from the center to the periphery are substantially subjected to the cooling action of the rotary cooling member 400; moreover, the temperature of the center of the carrier device 300 and the center of the workpiece 500 are usually relatively high, and by adopting the above technical solution, it can be ensured that the workpiece 500 and the carrier device 300 can be cooled from the center to the periphery, and further it can be ensured that the temperature of each position on the workpiece 500 and the carrier device 300 can meet the preset temperature.
As mentioned above, the cooling air hole 410 may be a port of a cooling pipeline disposed on the surface of the rotary cooling element 400, and in another embodiment of the present invention, a cooling air channel 420 is disposed in the rotary cooling element 400, one end of the cooling air channel 420 is communicated with the cooling air hole 410, and the other end of the cooling air channel 420 is communicated with a cooling air source, so that, in a case where the workpiece 500 needs to be cooled, the cooling air can be delivered from the cooling air source to the cooling air hole 410 through the cooling air channel 420.
Adopt under the circumstances of above-mentioned technical scheme for cooling gas's transfer passage is more hidden, and can not occupy the space outside rotatory cooling piece 400, and then aforementioned pipeline is also difficult for receiving the interference of other parts, can stably provide cooling gas to work piece 500, and can guarantee that cooling gas's the direction of sweeping keeps unchangeable, and then guarantees that work piece 500's cooling effect is comparatively reliable and stable.
Specifically, the cross section of the cooling air duct 420 may be a circular structure, and the cross-sectional area of the cooling air duct 420 may be determined according to actual conditions. The cooling air holes 410 may also be circular, and the diameter of the cooling air holes 410 may be determined according to the number of the cooling air holes 410 and the size of the workpiece 500.
Optionally, the number of the cooling air holes 410 is multiple, and the multiple cooling air holes 410 are all communicated with the cooling air passage 420, so that under the condition that the cooling air passage 420 is communicated with a cooling air source, it can be ensured that cooling air can be purged from any one of the cooling air holes 410, so as to provide a cooling effect for the workpiece 500. Under the condition that the quantity of cooling gas hole 410 is a plurality of, cooling gas's diffusion effect is better to can further promote cooling gas to the even degree of cooling of work piece 500, make the temperature everywhere on the work piece 500 basically the same, guarantee that the whole of work piece 500 is cooled down the effect better.
Specifically, the shapes and sizes of the plurality of cooling air holes 410 may be correspondingly the same to reduce the processing difficulty of the cooling air holes 410, and the plurality of cooling air holes 410 may be uniformly arranged on the surface of the rotary cooling member 400. More specifically, a plurality of cooling air holes 410 may be arranged in a row-by-row manner to further improve the cooling uniformity of the work piece 500.
Since most of the processed workpieces 500 processed by the semiconductor chamber are circular structural members such as wafers, in another embodiment of the present invention, optionally, the plurality of cooling air holes 410 may be arranged in a ring shape and uniformly, so that the corresponding relationship between the plurality of cooling air holes 410 and the processed workpieces 500 is more suitable, thereby further improving the cooling effect of the processed workpieces 500. Specifically, the diameter of the annular structure formed by the plurality of cooling air holes 410 may be determined according to the diameter of the workpiece 500, and the diameter of the annular structure formed by the plurality of cooling air holes 410 may be smaller than the diameter of the workpiece 500, so as to ensure that the cooling gas blown out by each cooling air hole 410 can be diffused to the inner side and the outer side of the position of the workpiece 500 opposite to the cooling air hole 410, and further ensure that the cooled effect of the whole workpiece 500 is relatively high.
Alternatively, in the case that the plurality of cooling air holes 410 are annularly and uniformly arranged, as described above, each cooling air hole 410 may have a circular structure, and the diameter of the cooling air hole 410 is 2mm, in this case, it can be ensured that the workpiece 500 has a high cooled efficiency. In the case that the cooling air holes 410 are formed on both opposite sides of the rotary cooling member 400, the number, size and arrangement of the cooling air holes 410 on the opposite sides of the rotary cooling member 400 may be the same.
Under the condition that the number of the cooling air holes 410 is multiple, one cooling air passage 420 can be provided, and the multiple cooling air holes 410 can be communicated with the cooling air passage 420, optionally, the rotary cooling piece 400 is provided with a circumferential communication air passage 430 and multiple radial communication air passages 440, the multiple cooling air holes 410 are communicated with each other through the circumferential communication air passage 430, the multiple radial communication air passages 440 are uniformly arranged, one end of each radial communication air passage 440 is communicated with the circumferential communication air passage 430, and the other end of each radial communication air passage 440 is communicated with the cooling air passage 420, so that the multiple cooling air holes 410 are communicated with the cooling air passage 420 through the circumferential communication air passage 430 and the multiple radial communication air passages 440, the flow rate and the flow rate of cooling air blown out from the multiple cooling air holes 410 are basically the same, and basically the same cooling effect is provided for different positions on the workpiece 500; in addition, under the condition of adopting the technical scheme, the condition that the circumferential communication air passage 430 or one radial communication air passage 440 is blocked can be prevented, and the cooling air holes 410 at the corresponding positions cannot blow cooling air.
Specifically, the number of the radial communication air passages 440 may be the same as the number of the cooling air holes 410, and the plurality of radial communication air passages 440 are connected to the plurality of cooling air holes 410 in a one-to-one correspondence. In order to reduce the difficulty of machining the rotary cooling element 400, the number of the radial communicating air passages 440 may be smaller than the number of the cooling air holes 410.
Based on the semiconductor chamber disclosed in any of the above embodiments, an embodiment of the present invention further discloses a semiconductor device, which includes the semiconductor chamber disclosed in any of the above embodiments.
Based on the semiconductor chamber disclosed in any of the above embodiments, as shown in fig. 4, an embodiment of the present invention further discloses a semiconductor cooling method, which can be applied to the working process of any of the above semiconductor chambers. The semiconductor cooling method comprises the following steps:
and S1, in the process of sputtering the workpiece, if the temperature of the workpiece is detected to exceed the preset temperature, controlling the bearing device to move along the bearing direction according to the position of the rotary cooling piece.
Particularly, other parts that the loading attachment can be relative in the semiconductor cavity move along bearing the weight of the direction, promptly, the loading attachment liftable, in sputtering process, can heat the work piece in the semiconductor cavity usually, along with going on of heating process, the temperature of work piece also can continuously rise, and effect and the efficiency homogeneous phase that is in order to guarantee sputtering process are relatively higher, need guarantee that the temperature of work piece is in the within range of predetermineeing the temperature usually. When the temperature of the workpiece is detected and the temperature of the workpiece exceeds the preset temperature, the workpiece generally needs to be cooled, the rotary cooling member in the semiconductor cavity can be used for providing a cooling effect for the workpiece, and in order to ensure that the rotary cooling member is not obstructed by the bearing device when rotating, the bearing device can be controlled to move along the bearing direction according to the position of the rotary cooling member.
And S2, if the height of the workpiece in the bearing direction is higher or lower than the height of the rotary cooling piece, controlling the rotary cooling piece to rotate to the side, facing the bearing device, of the workpiece or the side, facing away from the bearing device, of the workpiece, and blowing cooling gas to cool the workpiece.
Correspondingly, under the condition that the height of the bearing device does not prevent the rotary cooling piece from rotating, the rotary cooling piece can be rotated to one side of the processed piece facing the bearing device, or the rotary cooling piece can be rotated to one side of the processed piece departing from the bearing device, namely, the rotary cooling piece can be rotated to the upper side or the lower side of the processed piece, so as to cool the processed piece.
The specific cooling mode of the rotary cooling element can be various, for example, the rotary cooling element can provide a cooling effect for the processed workpiece by arranging a cooling medium in the rotary cooling element and then by means of cold diffusion. Alternatively, the rotary cooling member may be provided with cooling air holes to cool the workpiece by blowing cooling gas through the cooling air holes, and the cooling efficiency and the cooling effect of the cooling method are relatively high. In order to prevent the cooling gas from affecting the sputtering process, a gas having relatively inactive properties may be used as the cooling gas to prevent the cooling gas from reacting with the workpiece or particles.
Further, the type of the cooling gas blown out from the rotary cooling element can be made the same as the type of the process gas for the sputtering process, and even if the cooling gas is physically or chemically changed in the semiconductor chamber, it does not have any adverse effect on the normal operation of the sputtering process.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims (10)

1. A semiconductor chamber, comprising:
the bearing device (300), the bearing device (300) is arranged in the semiconductor chamber (100) and is used for bearing the processed workpiece (500), and the bearing device (300) can be lifted;
a support passing through the carrying device (300) for supporting the work piece (500) when the work piece (500) is detached from the carrying device (300);
and the rotary cooling piece (400) is installed in the semiconductor cavity (100) and used for rotating to the side, facing the bearing device (300), of the workpiece (500) or the side, facing away from the bearing device (300), of the workpiece (500) and cooling the workpiece (500) when the temperature of the workpiece (500) exceeds a preset temperature.
2. The semiconductor chamber of claim 1, wherein the rotary cooling member (400) is provided with cooling gas holes (410), the rotary cooling member (400) is used for rotating between the workpiece (500) and the carrying device (300), and cooling gas is blown out through the cooling gas holes (410) to cool the workpiece (500) and the carrying device (300).
3. The semiconductor chamber of claim 2, wherein the rotary cooling member (400) comprises a cooling portion, an upper surface and a lower surface of the cooling portion communicating through the cooling air holes (410);
the distance between the workpiece (500) and the upper surface of the cooling part is equal to the distance between the bearing device (300) and the lower surface of the cooling part, and the workpiece (500) and the bearing device (300) are coaxial with the center of the cooling part.
4. The semiconductor chamber as claimed in claim 2, wherein the rotary cooling member (400) is further provided with a cooling air duct (420), one end of the cooling air duct (420) is communicated with the cooling air hole (410), and the other end of the cooling air duct (420) is communicated with a cooling air source.
5. The semiconductor chamber of claim 4, wherein the number of the cooling gas holes (410) is plural, and the plural cooling gas holes (410) are all communicated with the cooling gas passage (420).
6. The semiconductor chamber of claim 5, wherein the plurality of cooling gas holes (410) are arranged in a ring shape and uniformly.
7. The semiconductor chamber as claimed in claim 5, wherein the rotary cooling member (400) is further provided with a circumferential communication air passage (430) and a plurality of radial communication air passages (440), the plurality of cooling air holes (410) are communicated with each other through the circumferential communication air passage (430), the plurality of radial communication air passages (440) are uniformly arranged, and one end of each radial communication air passage (440) is communicated with the circumferential communication air passage (430) and the other end is communicated with the cooling air passage (420).
8. A semiconductor device comprising the semiconductor chamber of any one of claims 1 to 7.
9. A semiconductor cooling method applied to the semiconductor chamber as claimed in any one of claims 1 to 7, wherein the semiconductor cooling method comprises:
in the process of carrying out a sputtering process on a workpiece to be processed, if the temperature of the workpiece to be processed is detected to exceed a preset temperature, controlling the bearing device to move along the bearing direction according to the position of the rotary cooling piece;
and if the height of the workpiece in the bearing direction is higher or lower than the height of the rotary cooling piece, controlling the rotary cooling piece to rotate to the side, facing the bearing device, of the workpiece or the side, facing away from the bearing device, of the workpiece, and blowing cooling gas to cool the workpiece.
10. The semiconductor cooling method according to claim 9, wherein the kind of the cooling gas blown out by the rotary cooling member (400) is the same as that of the process gas of the sputtering process.
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