CN114005781A - Bearing device and semiconductor process chamber - Google Patents

Bearing device and semiconductor process chamber Download PDF

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Publication number
CN114005781A
CN114005781A CN202111272021.5A CN202111272021A CN114005781A CN 114005781 A CN114005781 A CN 114005781A CN 202111272021 A CN202111272021 A CN 202111272021A CN 114005781 A CN114005781 A CN 114005781A
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China
Prior art keywords
heat exchange
liquid
groove
layer
carrier
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CN202111272021.5A
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Chinese (zh)
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赵晋荣
陈星�
吴东煜
韦刚
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202111272021.5A priority Critical patent/CN114005781A/en
Publication of CN114005781A publication Critical patent/CN114005781A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a bearing device which comprises a bearing layer and a heat exchange layer, wherein the bearing layer and the heat exchange layer are stacked from top to bottom along the height direction, the bearing layer is used for bearing and heating a wafer, a heat exchange cavity is arranged in the heat exchange layer, a plurality of liquid inlets and a plurality of liquid outlets are formed in the bottom of the heat exchange cavity, the liquid inlets are circumferentially distributed in the central area of the heat exchange cavity, the liquid outlets are circumferentially distributed in the edge area of the heat exchange cavity, and the heat exchange cavity of the heat exchange layer receives and discharges cooling liquid through the liquid inlets and the liquid outlets so as to cool the bearing layer. In the invention, the heat exchange cavity receives the cooling liquid through the liquid inlet in the central area and discharges the cooling liquid after heat exchange through the liquid outlet in the edge area, so that the cooling liquid flows radially from the central area to the edge area in the heat exchange cavity, the circumferential temperature uniformity of the bearing device is improved, and the uniformity of a semiconductor process is further improved. The invention also provides a semiconductor process chamber.

Description

Bearing device and semiconductor process chamber
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to a bearing device and a semiconductor process chamber comprising the bearing device.
Background
An Electrostatic Chuck (ESC) is an apparatus for holding a Wafer (Wafer) to be processed by Electrostatic adsorption, and controlling the surface temperature of the Wafer and providing rf bias voltage thereto. Compared with a mechanical chuck, the electrostatic chuck reduces the probability of damage of the wafer due to pressure, collision and the like, increases the processing area of the edge of the wafer, and reduces the deposition of particles and byproducts on the surface of the wafer; while electrostatic chucks can operate in a high vacuum environment as compared to vacuum chucks. Due to the above advantages, the electrostatic chuck has been widely used in Integrated Circuit (IC) manufacturing processes, particularly in plasma etching (Etch), Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), and the like.
However, when the temperature of the wafer is controlled by the conventional electrostatic chuck, the problem that the circumferential temperature uniformity of the wafer cannot be ensured often occurs, so that the uniformity of a semiconductor process performed on the surface of the wafer is poor, the uniformity of the film thickness formed on the surface of the wafer is poor, and the like, and the product yield is affected. Therefore, how to provide an electrostatic chuck structure capable of improving the temperature uniformity in the circumferential direction of the wafer becomes a technical problem to be solved in the field.
Disclosure of Invention
The invention aims to provide a bearing device and a semiconductor process chamber, wherein the bearing device can improve the circumferential temperature uniformity of a wafer.
In order to achieve the above object, an aspect of the present invention provides a carrier device, where the carrier device is configured to carry a wafer in a semiconductor process chamber, the carrier device includes a carrier layer and a heat exchange layer stacked from top to bottom along a height direction, the carrier layer is configured to carry and heat the wafer, the heat exchange layer has a heat exchange cavity therein, a plurality of liquid inlets and a plurality of liquid outlets are disposed at a bottom of the heat exchange cavity, the plurality of liquid inlets are circumferentially distributed in a central region of the heat exchange cavity, the plurality of liquid outlets are circumferentially distributed in an edge region of the heat exchange cavity, and the heat exchange cavity of the heat exchange layer receives and discharges a cooling liquid through the liquid inlets and the liquid outlets to cool the carrier layer.
Optionally, the heat exchange layer includes heat exchange plate and the division board of range upon range of setting, be formed with the heat transfer groove on the bottom surface of heat exchange plate, the division board seals the heat transfer groove forms the heat transfer chamber, and is a plurality of the inlet is with a plurality of the liquid outlet forms on the division board.
Optionally, a plurality of groups of heat exchange bosses are formed on the bottom surface of the heat exchange groove, a plurality of heat exchange bosses in each group are uniformly distributed along the circumferential direction, and the heat exchange bosses in different groups are staggered along the radial direction.
Optionally, the cross-sectional shape of the heat exchange boss is circular, square or streamline.
Optionally, an annular groove is formed on an edge of the bottom surface of the heat exchange groove, the annular groove is arranged around an axis of the bearing device, and the positions of the liquid outlets correspond to the positions of the annular groove.
Optionally, the bearing device further includes a diversion disc, and the diversion disc is stacked on one side of the heat exchange layer, which is away from the bearing layer; the top surface of guiding plate is formed with feed liquor groove and goes out the liquid groove, the bottom of guiding plate is equipped with the feed liquor hole and goes out the liquid hole, the feed liquor groove be used for with feed liquor hole and a plurality of the inlet intercommunication, go out the liquid groove be used for with go out liquid hole and a plurality of the liquid outlet intercommunication.
Optionally, the depth of the heat exchange cavity is 60% -80% of the depth of the liquid inlet groove, and the depth of the heat exchange cavity is not less than 5 mm.
Optionally, a first rf feed-in through hole penetrating through the diversion disc in the thickness direction and coaxial with the bearing device is formed in the diversion disc, the liquid inlet slot includes a first connection slot and an annular slot, the annular slot is disposed around the first rf feed-in through hole, the first connection slot is connected between the liquid inlet hole and the annular slot, and the positions of the liquid inlets correspond to the first connection slot; and/or the presence of a gas in the gas,
the liquid outlet groove comprises a second connecting groove, an arc groove and a plurality of liquid collecting grooves, the second connecting groove is connected between the liquid outlet hole and the arc groove, the arc groove is arranged around the outer side of the annular groove, the second connecting groove is arranged around the first connecting groove, and two ends of the arc groove are correspondingly connected with two ends of the second connecting groove one by one, so that the first connecting groove is positioned in an area limited by the arc groove and the second connecting groove; the plurality of liquid collecting grooves are distributed around the second connecting groove at equal intervals in the circumferential direction, and each liquid collecting groove is used for communicating the second connecting groove with at least one liquid outlet.
Optionally, the liquid collecting groove includes a connecting portion extending in the radial direction and a flow dividing portion extending in the circumferential direction, each flow dividing portion is communicated with a plurality of adjacent liquid outlets, and the connecting portion is connected between the circular arc groove and the corresponding flow dividing portion.
Optionally, the bottom of the heat exchange layer is provided with a plurality of groups of liquid outlets, each group of liquid outlets is communicated with the same flow dividing part, and the plurality of groups of liquid outlets are circumferentially distributed at equal intervals.
Optionally, the carrier layer comprises an insulating layer and a heating layer, the heating layer is located between the heat exchange layer and the insulating layer, the insulating layer is used for supporting the wafer, and the heating layer is used for heating the insulating layer; the diameter of the heat exchange cavity is not smaller than that of the insulating layer.
As a second aspect of the present invention, a semiconductor process chamber is provided, wherein a carrying device is disposed in the semiconductor process chamber, and the carrying device is the carrying device described above.
In the bearing device and the semiconductor process chamber provided by the invention, the heat exchange layer is arranged below the bearing layer of the bearing device, the heat exchange cavity receives cooling liquid from the cold source through the plurality of liquid inlets distributed in the circumferential direction of the central area and guides the cooling liquid subjected to heat exchange to the cold source through the plurality of liquid outlets positioned in the edge area, so that the cooling liquid flows radially from the central area to the edge area in the heat exchange cavity, the problem of nonuniform circumferential temperature caused by the flow of the cooling liquid along a circumferential path is solved, the circumferential temperature uniformity of the bearing device is improved, the uniformity of a semiconductor process is improved, and the product yield is ensured.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural view of a conventional electrostatic chuck;
FIG. 2 is a schematic cross-sectional view of the electrostatic chuck of FIG. 1;
FIG. 3 is a schematic diagram of the structure of the heating layer in the electrostatic chuck of FIG. 1;
FIG. 4 is a schematic structural diagram of a carrier apparatus according to an embodiment of the present invention;
fig. 5 is a schematic top structure view of a diaphragm in a bearing device according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a partition board in a carrying device according to an embodiment of the present invention;
fig. 7 is a schematic bottom structure diagram of a heat exchange plate in a carrying device according to an embodiment of the present invention;
fig. 8 is a sectional view taken along a-a of the heat exchanging disk of fig. 7.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
As shown in fig. 1, a typical electrostatic chuck structure in the prior art includes a metal base 100, a heating layer 200, and a dielectric layer 300. The dielectric layer 300 is typically ceramic and has a dc electrode 310 embedded therein, which when energized can apply an electrostatic attraction force to a wafer (not shown) placed on the dielectric layer 300, thereby fixing the wafer position. The heating layer 200 is disposed below the dielectric layer 300, and is used for heating the wafer on the dielectric layer 300. The metal base 100 is used for supporting and protecting the heating layer 200 and the dielectric layer 300 mounted thereon, and the metal base 100 includes a cooling substrate 110, and a cooling liquid channel 111 is formed inside the cooling substrate 110 and used for circulating a cooling liquid so as to cool the electrostatic chuck and a wafer carried thereon.
For most electrostatic chucks, the rf needs to be fed from a central hole location in the metal base 100. Therefore, the cooling liquid that cools the inside of the substrate 110 can flow in or out only from the edge. Fig. 2 is a cross-sectional view of the cooling substrate 110 taken along a cross-section corresponding to a broken line AA in fig. 1. As shown by the dashed arrows in fig. 2, the cooling fluid flows from the edge of the cooling substrate, flows through the helical cooling fluid channel 111 with a gradually decreasing diameter to the center of the electrostatic chuck, flows back to the edge in the opposite manner, and flows out of the cooling substrate 110 from the edge back into the heat exchanger.
In practical use, the temperature of the cooling liquid is substantially lower than that of the dielectric layer 300, the temperature is the lowest when the cooling liquid enters the cooling substrate 110, and the temperature difference between the cooling liquid and the dielectric layer 300 is the largest, so that the temperature rise rate of the cooling liquid is the fastest when the cooling liquid flows through the outer ring, and meanwhile, the length of the cooling liquid channel of the outermost ring is longer than that of the cooling liquid channel of the inner ring, so that the circumferential temperature difference of the cooling liquid flowing through the outer ring is significantly larger than that of the cooling liquid flowing through the inner ring.
In some electrostatic chucks, the heating layer 200 has a zone heating function, for example, as shown in fig. 3, the heating layer 200 has four independent heating zones: the temperature of each of the heating zones 210, 220, 230, and 240 can be adjusted relatively independently, so that the temperature of the different zones can be adjusted to improve the temperature uniformity of the electrostatic chuck dielectric layer 300 in the radial direction. However, for the same annular region, the heating power density is almost the same everywhere within the region, and the circumferential temperature difference generated in the cooling substrate 110 cannot be balanced.
Therefore, the conventional electrostatic chuck often has the problem of poor temperature uniformity in the peripheral region, and cannot meet the requirements of semiconductor processes.
In order to solve the above technical problems, an aspect of the present invention provides a carrier apparatus for carrying a wafer in a semiconductor process chamber, the carrier apparatus includes a carrier layer and a heat exchange layer (including a heat exchange tray 4110 and a partition plate 4120) stacked from top to bottom along a height direction, the carrier layer is used for carrying and heating the wafer, the heat exchange layer has a heat exchange cavity therein, and a plurality of liquid inlets 4121 and a plurality of liquid outlets 4122 are disposed at a bottom of the heat exchange cavity. The liquid inlets 4121 are circumferentially distributed in the central area of the heat exchange cavity, the liquid outlets 4122 are circumferentially distributed in the edge area of the heat exchange cavity (the edge area surrounds the periphery of the central area), and the heat exchange cavity of the heat exchange layer receives and discharges cooling liquid through the liquid inlets 4121 and the liquid outlets 4122 so as to cool the bearing layer.
In the invention, the heat exchange layer is arranged below the bearing layer of the bearing device, the heat exchange cavity receives cooling liquid from a cold source (a heat exchanger) through a plurality of liquid inlets 4121 distributed in the circumferential direction of a central region and guides the cooling liquid after heat exchange to the cold source through a plurality of liquid outlets 4122 positioned in an edge region, so that the cooling liquid flows from the central region to the edge region in the heat exchange cavity in the radial direction, the problem of nonuniform circumferential temperature caused by the flow of the cooling liquid along a circumferential path is solved (the cooling liquid flows in the radial direction and absorbs the heat of the bearing layer and a wafer (and a heating layer), only radial temperature difference is generated, namely the temperature of an inner ring is lower, the temperature of an outer ring is higher, and the radial temperature difference can be balanced by adjusting the power of each annular heating region of a heater), the circumferential temperature uniformity of the bearing device is improved, and the uniformity of a semiconductor process is further improved, the product yield is ensured.
As an optional embodiment of the present invention, the carrying device may be an electrostatic chuck, and specifically, the carrying layer may be made of a ceramic material and is embedded with a dc electrode, so as to perform adsorption and fixation on the wafer above the dc electrode after the dc electrode is powered on. The carrier layer may include an insulating layer and a heating layer, the heating layer is located between the heat exchanging layer and the insulating layer, the insulating layer is used for supporting the wafer, the heating layer is used for heating the insulating layer, the heat exchanging layer (including the heat exchanging tray 4110 and the isolation plate 4120) is equivalent to a cooling substrate in the metal base of the electrostatic chuck, and the insulating layer and the wafer carried thereon are commonly subjected to temperature adjustment by the heating layer and the cooling substrate. Preferably, the diameter of the heat exchange cavity is not smaller than that of the insulating layer, so that the heat exchange layer can cool the whole wafer area.
How the liquid inlet 4121 and the liquid outlet 4122 of the heat exchange layer are connected with the cold source is not particularly limited in the embodiment of the present invention, for example, the cold source can be directly connected with the bearing layer of the bearing layer through a pipeline, that is, the output end of the cold source is connected with the liquid inlet 4121 of the heat exchange layer through a liquid inlet pipe, and the liquid outlet 4122 of the heat exchange layer is connected with the input end of the cold source through a liquid outlet pipe; or, in order to improve the compactness and circumferential uniformity of the structure of the bearing device, the bearing device may further include a disc-shaped flow guide member stacked below the heat exchange layer, a channel structure having the same function as the pipeline is formed inside the disc-shaped flow guide member, and the liquid inlet 4121 and the liquid outlet 4122 of the heat exchange layer are butted with the opening of the channel structure at the top of the disc-shaped flow guide member and are respectively connected with the output end and the input end of the cold source through the channel structure.
In order to reduce the overall thickness of the cooling base plate 4100 and improve the maintenance performance of the cooling base plate 4100 while ensuring the compactness and circumferential uniformity of the structure of the carrier device, as shown in fig. 4 and 5, as a preferred embodiment of the present invention, the carrier device further comprises a deflector 4130, the deflector 4130 is stacked on the side of the heat exchange layer facing away from the carrier layer, and constitutes the cooling base plate 4100 in the metal base 4000 of the electrostatic chuck together with the heat exchange layer (including the heat exchange plate 4110 and the isolation plate 4120). The top surface of the diversion disk 4130 is formed with a liquid inlet groove 4131 and a liquid outlet groove 4132, the bottom of the diversion disk is provided with a liquid inlet hole 4150 and a liquid outlet hole 4160, the liquid inlet groove 4131 is used for communicating the liquid inlet hole 4150 with a plurality of liquid inlets 4121, and the liquid outlet groove 4132 is used for communicating the liquid outlet hole 4160 with a plurality of liquid outlets 4122.
In the embodiment of the present invention, the bottom surface of the heat exchange layer (i.e., the bottom surface of the partition plate 4120) contacts the top surface of the flow guide plate 4130 and seals the top portions of the liquid inlet groove 4131 and the liquid outlet groove 4132, thereby forming the flow guide channels connected between the liquid inlet hole 4150 and the plurality of liquid inlet holes 4121 and between the liquid outlet hole 4160 and the plurality of liquid outlet holes 4122, and as compared with the case where a closed flow guide channel is separately formed inside the disc-shaped flow guide member below the heat exchange layer, the thickness of the material between the top portion of the flow guide channel and the top surface of the flow guide plate 4130 is reduced, thereby reducing the overall thickness of the cooling substrate 4100. Meanwhile, when the device is maintained, the diversion channel can be disassembled only by separating the diversion disk 4130 from the heat exchange layer, so that the convenience of cleaning or overhauling the inside of the diversion channel is improved, and the maintenance performance of the cooling substrate 4100 is further improved.
In order to improve the circumferential uniformity of the flow rate of the cooling liquid flowing radially along each angle in the cooling cavity, as shown in fig. 4 and 5, as a preferred embodiment of the present invention, a first rf feed-in through hole penetrating through the diversion disk 4130 in the thickness direction and coaxial with the carrying device is formed in the diversion disk 4130, the liquid inlet groove 4131 includes a first connecting groove and an annular groove, the annular groove is disposed around the first rf feed-in through hole, the first connecting groove is connected between the liquid inlet hole 4150 and the annular groove, and the positions of the liquid inlets 4121 correspond to the first connecting groove; and/or the presence of a gas in the gas,
the liquid outlet groove 4132 comprises a second connecting groove, an arc groove and a plurality of liquid collecting grooves, the second connecting groove is connected between the liquid outlet hole 4160 and the arc groove, the arc groove is arranged around the outer side of the annular groove, the second connecting groove is arranged around the first connecting groove, and two ends of the arc groove are correspondingly connected with two ends of the second connecting groove one by one, so that the first connecting groove is positioned in an area limited by the arc groove and the second connecting groove; a plurality of liquid collecting grooves are circumferentially distributed around the second connecting groove at equal intervals, and each liquid collecting groove communicates the second connecting groove with at least one liquid outlet 4122.
In the embodiment of the present invention, the liquid inlet groove 4131 includes a first connecting groove and an annular groove disposed around the first rf feeding through hole, and is connected to the plurality of liquid inlets 4121 through the annular groove, thereby reducing a length difference between fluid paths between the liquid inlets 4121 and the liquid inlet holes 4150 located at different angles; similarly, the liquid outlet groove 4132 includes a second connecting groove, an arc groove and a plurality of liquid collecting grooves, the arc groove is concentrically disposed outside the annular groove and has a radius close to that of the annular groove, and the liquid outlets 4122 at different angles are connected to the arc groove through the liquid collecting grooves having the same radial length, so that the length difference between the fluid paths between the liquid outlets 4122 at different angles and the liquid outlet hole 4160 is reduced.
That is, the difference in the path length of each liquid inlet 4121 connected to the liquid inlet hole 4150 through the liquid inlet groove 4131 and the difference in the path length of each liquid outlet 4122 connected to the liquid outlet hole 4160 through the liquid outlet groove 4132 are reduced, so that the difference in the total path length of the cooling liquid flowing in the cooling chamber in the radial direction at each angle from the liquid inlet hole 4150 to the liquid outlet hole 4160 is reduced, and the circumferential uniformity of the flow rate of the cooling liquid flowing in the cooling chamber in the radial direction at each angle is improved.
As an alternative embodiment of the present invention, as shown in fig. 5, the liquid collecting groove includes a connecting portion extending in the radial direction and a flow dividing portion extending in the circumferential direction, each flow dividing portion is communicated with a plurality of (e.g., two) adjacent liquid outlets 4122, and the connecting portion is connected between the circular arc groove and the corresponding flow dividing portion.
In order to reduce the number of the liquid collecting grooves and simplify the structure of the heat exchange layer, as a preferred embodiment of the present invention, as shown in fig. 5, the bottom of the heat exchange layer is provided with a plurality of groups of liquid outlets 4122, each group of liquid outlets 4122 is communicated with the same flow dividing portion, and the plurality of groups of liquid outlets 4122 are circumferentially distributed at equal intervals. For example, as shown in fig. 5, two liquid outlets 4122 are disposed close to each other and connected to a connection portion of the same liquid collecting groove, so that the required number of liquid collecting grooves is reduced while uniformity of the circumferential flow field of the cooling cavity is ensured.
In order to improve the maintenance performance of the heat exchange layer, as shown in fig. 4, 6, 7 and 8, as a preferred embodiment of the present invention, the heat exchange layer includes a heat exchange plate 4110 and a partition plate 4120 which are stacked, a heat exchange groove is formed on a bottom surface of the heat exchange plate 4110, a heat exchange cavity is formed by the partition plate 4120 closing the heat exchange groove, and a plurality of liquid inlets 4121 and a plurality of liquid outlets 4122 are formed on the partition plate 4120.
In the embodiment of the invention, the heat exchange cavity is obtained by sealing the heat exchange grooves on the bottom surface of the heat exchange plate 4110 through the isolation plate 4120, and when equipment is maintained, the heat exchange cavity can be opened only by detaching the isolation plate 4120 from the bottom of the heat exchange plate 4110, so that the convenience of cleaning or overhauling the interior of the heat exchange cavity is improved, and the maintenance performance of a heat exchange layer is further improved.
As a preferred embodiment of the invention, the diameter of the heat exchange channel, i.e. the diameter of the heat exchange cavity, is slightly larger than the diameter of the carrier layer, i.e. the dielectric layer, so that the entire carrier layer can be cooled, e.g. the diameter of the heat exchange channel may be 300mm (millimeters).
As a preferred embodiment of the present invention, as shown in fig. 7 and 8, a plurality of sets of heat exchange bosses are formed on the bottom surface of the heat exchange groove, a plurality of heat exchange bosses in each set are uniformly distributed along the circumferential direction, and the heat exchange bosses in different sets are staggered in the radial direction. In the embodiment of the invention, the heat exchange bosses which are uniformly distributed in the circumferential direction are formed on the bottom surface of the heat exchange groove, on one hand, the heat exchange bosses can change the flow path of the cooling liquid in the cooling cavity, so that the circumferential uniformity of the flow of the cooling liquid is improved, on the other hand, the side walls of the heat exchange bosses are in contact with the cooling liquid and exchange heat, which is equivalent to increasing the contact area between the heat exchange plate 4110 and the cooling liquid, so that the heat exchange efficiency of the bearing device can be improved, and the regulation efficiency of the bearing device on the temperature of the wafer is further improved.
The cross section shape of the heat exchange boss is not particularly limited in the embodiment of the invention, for example, the cross section shape of the heat exchange boss can be a circle, a square, a streamline or other shapes.
The depth change trends of different positions of the heat exchange groove are not particularly limited, and the depth of the position with the same distance from the axis of the bearing device is equal to ensure the circumferential temperature uniformity.
In order to improve the radial uniformity of the cooling capacity of the cooling liquid in the heat exchange cavity on the carrier layer and the wafer carried thereon, as a preferred embodiment of the present invention, as shown in fig. 4, 7, and 8, an annular groove is further formed on the bottom surface of the heat exchange groove, the annular groove is disposed around the axis of the carrier device, and the positions of the plurality of liquid outlets 4122 correspond to the positions of the annular groove.
Further preferably, the outer diameter of the annular groove is the same as the outer diameter of the heat exchange groove (i.e. the outer side wall of the annular groove meets the side wall of the heat exchange groove). When the cooling liquid flows from the central area of the cooling cavity to the edge area, the temperature of the cooling liquid is increased, so that the temperature of the cooling liquid in the edge area of the cooling cavity is higher than that of the cooling liquid in the central area, and the heat exchange efficiency of the cooling liquid in the edge area of the cooling cavity is lower.
As a preferred embodiment of the present invention, the depth of the heat exchange groove is preferably 60% to 80% of the depth of the liquid inlet groove 4131 on the deflector 4130, and is not less than 5mm, so as to avoid generating excessive flow resistance to affect the flow of the cooling liquid. The depth of the heat exchange groove can be changed along the radial direction, and the total change of the depth of the heat exchange groove is not more than 2 mm.
As an alternative embodiment of the present invention, as shown in fig. 6 to 8, a second rf feed-in through hole penetrating the heat exchange disc 4110 in the thickness direction and coaxial with the heat exchange disc 4110 is formed in the heat exchange disc 4110, a third rf feed-in through hole 4140 penetrating the isolation plate 4120 in the thickness direction and coaxial with the isolation plate 4120 is formed in the isolation plate 4120, and the heat exchange groove is shaped as a ring and disposed around the second rf feed-in through hole. The apertures of the first rf feed-in via, the second rf feed-in via, and the third rf feed-in via 4140 are preferably the same. That is, in the embodiment of the present invention, a through hole penetrating through the cooling substrate 4100 is formed at the center of the cooling substrate 4100 so as to feed in the rf signal.
As an alternative embodiment of the present invention, as shown in fig. 4 to 8, a plurality of (generally 3) pin holes penetrating through the carrier device along the thickness direction are formed on the carrier device, and are used for allowing a pin (three-pin) structure to penetrate out and jack up the wafer. Through holes are also formed at corresponding positions on the heat exchanging plate 4110, the partition plate 4120 and the deflector 4130 as a part of the pin holes.
As shown in fig. 4 and 7, the top surface of the heat exchange boss contacts the partition plate 4120, and the plurality of pin holes pass through the heat exchange boss at the corresponding position, respectively. That is, the position of a plurality of thimble holes all corresponds and is provided with the heat transfer boss, realizes the sealed to the cooling chamber through the contact relation between heat transfer boss top surface and the division board 4120, prevents that the coolant liquid in the cooling chamber from spilling through the thimble hole.
As an alternative embodiment of the present invention, as shown in fig. 4 and 5, the liquid inlet hole 4150 and the liquid outlet hole 4160 are located in the same diameter direction of the carrying device as one of the thimble holes, and the first connecting groove has a bent section at the position of the corresponding thimble hole to avoid the thimble hole.
As a second aspect of the present invention, a semiconductor processing chamber is provided, in which a carrying apparatus is disposed, where the carrying apparatus is provided in an embodiment of the present invention.
In the semiconductor process chamber provided by the invention, the heat exchange layer is arranged below the bearing layer of the bearing device, the heat exchange cavity receives cooling liquid from a cold source (a heat exchanger) through the plurality of liquid inlets 4121 distributed in the circumferential direction of the central region and guides the cooling liquid subjected to heat exchange to the cold source through the plurality of liquid outlets 4122 positioned in the edge region, so that the cooling liquid flows from the central region to the edge region in the heat exchange cavity in the radial direction, the problem of nonuniform circumferential temperature caused by the flowing of the cooling liquid along a circumferential path is solved, the circumferential temperature uniformity of the bearing device is improved, the uniformity of a semiconductor process is further improved, and the product yield is ensured.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (12)

1. The utility model provides a bearing device, bearing device is used for bearing weight of wafer in semiconductor process cavity, its characterized in that, bearing device includes bearing layer and the heat transfer layer of range upon range of setting from top to bottom along the direction of height, the bearing layer is used for bearing and heating the wafer, heat transfer chamber has in the heat transfer layer, the bottom in heat transfer chamber is equipped with a plurality of inlets and a plurality of liquid outlet, and is a plurality of the inlet is in the central zone circumference distribution in heat transfer chamber, and is a plurality of the liquid outlet is in the marginal zone circumference distribution in heat transfer chamber, the heat transfer chamber in heat transfer layer passes through the inlet with the liquid outlet is received and is discharged the coolant liquid, in order to right the bearing layer cooling.
2. The carrier according to claim 1, wherein the heat exchange layer comprises a heat exchange plate and a partition plate which are stacked, a heat exchange groove is formed on a bottom surface of the heat exchange plate, the partition plate closes the heat exchange groove to form the heat exchange cavity, and a plurality of liquid inlets and a plurality of liquid outlets are formed on the partition plate.
3. The carrier according to claim 2 wherein the heat exchange grooves have a plurality of sets of heat exchange bosses formed on a bottom surface thereof, wherein the plurality of heat exchange bosses in each set are circumferentially and uniformly distributed, and the heat exchange bosses in different sets are radially staggered.
4. The carrier in claim 3 wherein the heat exchange bosses are circular, square or streamlined in cross-sectional shape.
5. The carrier according to claim 2, wherein an annular groove is formed on an edge of the bottom surface of the heat exchange tank, the annular groove is arranged around the axis of the carrier, and the positions of the liquid outlets correspond to the positions of the annular groove.
6. The carrier device of claim 1, further comprising a deflector disc stacked on a side of the heat transfer layer facing away from the carrier layer; the top surface of guiding plate is formed with feed liquor groove and goes out the liquid groove, the bottom of guiding plate is equipped with the feed liquor hole and goes out the liquid hole, the feed liquor groove be used for with feed liquor hole and a plurality of the inlet intercommunication, go out the liquid groove be used for with go out liquid hole and a plurality of the liquid outlet intercommunication.
7. The carrier according to claim 6 wherein the depth of the heat exchange cavity is 60-80% of the depth of the inlet channel, and the depth of the heat exchange cavity is not less than 5 mm.
8. The carrying device as claimed in claim 6, wherein the baffle plate has a first RF feed-in through hole formed therein and extending through the baffle plate in a thickness direction and coaxial with the carrying device, the fluid inlet slot includes a first connecting slot and an annular slot, the annular slot is disposed around the first RF feed-in through hole, the first connecting slot is connected between the fluid inlet hole and the annular slot, and the plurality of fluid inlets are disposed corresponding to the first connecting slot; and/or the presence of a gas in the gas,
the liquid outlet groove comprises a second connecting groove, an arc groove and a plurality of liquid collecting grooves, the second connecting groove is connected between the liquid outlet hole and the arc groove, the arc groove is arranged around the outer side of the annular groove, the second connecting groove is arranged around the first connecting groove, and two ends of the arc groove are correspondingly connected with two ends of the second connecting groove one by one, so that the first connecting groove is positioned in an area limited by the arc groove and the second connecting groove; the plurality of liquid collecting grooves are distributed around the second connecting groove at equal intervals in the circumferential direction, and each liquid collecting groove is used for communicating the second connecting groove with at least one liquid outlet.
9. The carrying device as claimed in claim 8, wherein the liquid converging groove comprises a connecting portion extending along a radial direction and a flow dividing portion extending along a circumferential direction, each flow dividing portion is communicated with a plurality of adjacent liquid outlets, and the connecting portion is connected between the circular arc groove and the corresponding flow dividing portion.
10. The carrier apparatus as claimed in claim 9, wherein the heat exchanging layer has a plurality of sets of the liquid outlets at a bottom thereof, each set of the liquid outlets communicates with a same flow dividing portion, and the plurality of sets of the liquid outlets are circumferentially distributed at equal intervals.
11. The carrier as claimed in any one of claims 1-10, wherein the carrier comprises an insulating layer and a heating layer, the heating layer being located between the heat exchange layer and the insulating layer, the insulating layer being for supporting the wafer, the heating layer being for heating the insulating layer; the diameter of the heat exchange cavity is not smaller than that of the insulating layer.
12. A semiconductor processing chamber having a carrier disposed therein, wherein the carrier is as claimed in any one of claims 1 to 10.
CN202111272021.5A 2021-10-29 2021-10-29 Bearing device and semiconductor process chamber Pending CN114005781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111272021.5A CN114005781A (en) 2021-10-29 2021-10-29 Bearing device and semiconductor process chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111272021.5A CN114005781A (en) 2021-10-29 2021-10-29 Bearing device and semiconductor process chamber

Publications (1)

Publication Number Publication Date
CN114005781A true CN114005781A (en) 2022-02-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111272021.5A Pending CN114005781A (en) 2021-10-29 2021-10-29 Bearing device and semiconductor process chamber

Country Status (1)

Country Link
CN (1) CN114005781A (en)

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