CN220984500U - Wafer bearing device and semiconductor process equipment - Google Patents

Abstract

The application provides a wafer bearing device and semiconductor process equipment, wherein the wafer bearing device is arranged in a cavity of the semiconductor process equipment and is used for bearing and cooling a wafer; the wafer carrying device comprises: a carrier having a carrier surface for carrying a wafer; the cooling piece is made of a heat-conducting material, is arranged on one side of the bearing piece, which is far away from the bearing surface, and is internally provided with fluid flow channels for introducing cooling fluid, each fluid flow channel comprises a plurality of sub-flow channels, at least two sub-flow channels are arranged independently of each other, and at least one sub-flow channel is structured that a fluid outlet faces the bearing piece; at least one other sub-flow channel is configured with the fluid outlet directed to a location outside the carrier for cooling the corresponding region of the flow path for the cooling fluid. The wafer bearing device and the semiconductor process equipment provided by the application can solve the problem that the cooling cannot be effectively carried out due to the limitation of the flow of the cooling gas in the prior art.

Description

Wafer bearing device and semiconductor process equipment

Technical Field

The present disclosure relates to semiconductor manufacturing technology, and more particularly, to a wafer carrier and a semiconductor processing apparatus.

Background

High density plasma chemical vapor deposition (HDP-CVD) is a method of forming a high density plasma by Inductively Coupling (ICP) to deposit a thin film. HDP-CVD has excellent pore-filling properties, reliable deposition quality and electrical properties at lower temperatures, high throughput and simple handling properties. The reactor design and processing techniques of HDP-CVD allow for a wide range of applications to deposit both undoped and doped films, including Shallow Trench Isolation (STI), pre-metal dielectric (PMD), inter-metal dielectric (IMD) layers, and passivation layer (PAS) fill. Therefore, HDP-CVD is widely used for semiconductor processes of 0.14 μm or less.

In the actual production of HDP-CVD process, the high-concentration and high-energy plasma bombardment is performed on the surface of the wafer during sputtering (Sputter), so that the surface temperature of the wafer is very high, and the problems of damage of interconnected aluminum copper metal wires, thermal stress of the wafer and the like are caused. In order to reduce the high temperature caused by sputtering, in general, during high-density plasma deposition, a certain flow of inert cooling gas is introduced from below the susceptor for carrying the wafer through an IHC (inner he) system to reduce the temperature. Therefore, a part of heat can be taken away through heat exchange, but the flow of the inert cooling gas is limited, and if the flow is too large, the cooling gas directly blows to the wafer, so that the wafer is offset and the like, and the expected cooling effect cannot be achieved.

Disclosure of utility model

The application provides wafer bearing equipment and a method, which can reduce the condition of detecting the front-back inclination of a wafer, avoid the damage of the wafer and improve the production efficiency.

The technical scheme provided by the application is as follows:

According to a first aspect of the present application, there is provided a wafer carrier for positioning within a chamber of a semiconductor processing apparatus and carrying and cooling a wafer; the wafer carrying device comprises:

A carrier having a carrier surface for carrying a wafer; and

The cooling piece is made of a heat-conducting material, is arranged on one side, away from the bearing surface, of the bearing piece, and is internally provided with a fluid flow channel for introducing cooling fluid so as to cool the wafer borne by the bearing piece; wherein,

The fluid flow passage comprises a plurality of sub flow passages, at least two sub flow passages are arranged independently of each other,

At least one of the sub-channels is configured with a fluid outlet toward the carrier;

At least one other of the sub-channels is configured with the fluid outlet directed to a location outside the carrier to cool the cooling fluid to its flow path corresponding region.

Illustratively, at least a portion of the sub-flow channels extend circumferentially about the bearing surface around the center of the cooling element.

Illustratively, the cooling element is divided into a middle region and an edge region located at the periphery of the middle region along a direction from the center of the bearing surface to the edge of the bearing surface; wherein the fluid flow channels are configured such that the distribution density of the sub-flow channels in the edge region is greater than the distribution density of the sub-flow channels in the intermediate region.

Illustratively, the fluid flow channel comprises a first flow channel unit for introducing a first cooling gas, and the first flow channel unit comprises a plurality of sub flow channels which are concentric with the center of the bearing surface; the cooling member includes a first surface facing the carrier, and gas outlets of the respective sub-channels in the first channel unit penetrate onto the first surface to discharge cooling gas toward the carrier.

Illustratively, the gas inlets on each sub-flow channel in the first flow channel unit are disposed independently of each other; and/or, in the first flow channel unit, each sub-flow channel is provided with a plurality of gas outlets at intervals along the extending direction of the sub-flow channel, and the circumferential intervals between any two adjacent gas outlets on each sub-flow channel are equal.

Illustratively, radial intervals between any two adjacent sub-channels in the plurality of sub-channels arranged in concentric circles in the first channel unit are equal, so that each sub-channel in the first channel unit is uniformly distributed from the center of the first surface to the edge of the first surface;

And/or the cross-sectional dimensions of all the sub-flow channels in the first flow channel unit are equal, and the cross-sectional dimensions of the sub-flow channels are the same at any position in the extending direction.

The fluid flow channel further comprises a second flow channel unit for introducing a second cooling gas, wherein the specific heat capacity of the second cooling gas is larger than that of the first cooling gas; the second flow channel unit comprises at least one sub-flow channel arranged around the center of the bearing surface, the second flow channel units are distributed in the edge area, and the fluid outlets of the sub-flow channels of the second flow channel units are configured to discharge cooling fluid outside the chamber of the semiconductor process equipment.

Illustratively, the sub-flow channel in the second flow channel unit is bent and detoured a plurality of times in the extending direction thereof to form a serpentine sub-flow channel.

The wafer carrying device further comprises at least two temperature control modules, wherein the temperature control modules are used for monitoring temperature; the cooling piece is divided into a middle area and an edge area positioned at the periphery of the middle area along the direction from the center of the bearing surface to the edge of the bearing surface, at least one temperature control module is arranged in the edge area of the cooling piece, and at least one temperature control module is arranged in the middle area of the cooling piece.

According to a second aspect of the present application, there is provided a semiconductor processing apparatus comprising a process chamber for processing a wafer and a wafer carrier as described above disposed within the process chamber.

The beneficial effects brought by the application are as follows:

In the wafer carrying device and the semiconductor process equipment provided by the embodiments of the application, the wafer carrying device comprises a carrying piece and a cooling piece, wherein the carrying piece is used for carrying a wafer, the cooling piece is made of a heat conducting material and is arranged on one side of the carrying piece, which is far away from the carrying surface, of the carrying piece, a plurality of sub-runners are constructed in the cooling piece, at least two sub-runners are arranged independently of each other so as to respectively and independently feed cooling fluid, and a fluid outlet of at least one sub-runner faces the carrying piece so as to directly discharge the cooling fluid onto the carrying piece; the fluid outlet of at least another sub-runner is configured to discharge the cooling fluid to a position outside the bearing member, so that the cooling fluid can not be directly blown to the bearing member, but can be cooled by utilizing the heat conduction property of the cooling member and flowing through the region corresponding to the bearing member on the path, and the cooling fluid discharged to the position outside the bearing member can take away heat through heat exchange although not directly blown to the cooling member, and the problem that the wafer is offset and the like can not be caused while the heat is taken away, thereby solving the problem that the prior art cannot effectively cool due to the limitation of the flow of the introduced cooling gas.

It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the application or to delineate the scope of the application. Other features of the present application will become apparent from the description that follows.

Drawings

The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present application will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present application are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:

in the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.

Fig. 1 is a schematic structural diagram of a wafer carrier according to an embodiment of the present application;

FIG. 2 is a schematic view of a fluid flow path of a cooling member in a wafer carrier according to an embodiment of the present application;

FIG. 3 is a chart showing the pressure versus temperature for helium and carbon dioxide.

The reference numerals in the figures illustrate:

1. A wafer;

10. A carrier;

20. a cooling member;

10a, a bearing surface;

10b, air outlet holes;

21. a fluid flow path;

22. a temperature control module;

210. a sub-runner;

210A, a first sub-flow path;

210B, a second sub-runner;

s1, an intermediate zone;

s2, an edge area;

211. A first flow path unit;

212. And a second flow path unit.

Detailed Description

In the description of the present application, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. The meaning of "a plurality of" is two or more, unless specifically defined otherwise.

In order to make the objects, features and advantages of the present application more comprehensible, the technical solutions according to the embodiments of the present application will be clearly described in the following with reference to the accompanying drawings, and it is obvious that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

The embodiment of the application provides a wafer bearing device which is used for being arranged in a cavity of semiconductor process equipment and bearing and cooling wafers. The semiconductor process equipment may be, for example, physical vapor deposition process equipment, the process chamber may be specifically a chamber for performing a pre-clean process, or the like.

Fig. 1 is a schematic structural diagram of a wafer carrier according to an embodiment of the application.

As shown in fig. 1, the wafer carrier apparatus in the embodiment of the application includes a carrier 10 and a cooling member 20. The carrier 10 is used for carrying a wafer 1, and has a carrying surface 10a for carrying the wafer 1. In one embodiment, the carrier 10 may be an electrostatic chuck, or the like, for carrying and electrostatic attraction of the wafer 1. The electrostatic chuck may be provided with an air outlet 10b on a carrying surface 10a for carrying the wafer 1. When the electrostatic chuck carries the wafer 1, the cooling fluid can be blown out through the air outlet hole 10b and flows between the electrostatic chuck and the wafer 1, and the cooling fluid can form an air flow layer to increase the contact area between the electrostatic chuck and the wafer 1, and heat conduction is performed between the electrostatic chuck and the wafer 1 through the cooling fluid. In other embodiments of the present application, the carrier 10 may also use other structures to carry the wafer 1.

As shown in fig. 1, the cooling member 20 is disposed on a side of the carrier 10 facing away from the carrier surface 10a, and is used for cooling the carrier 10 to cool the wafer 1 on the carrier 10 through heat exchange. The cooling element 20 may be made of a heat conductive material, and fluid channels 21 are distributed in the cooling element 20, and the fluid channels 21 are used for introducing cooling fluid to cool the wafer 1 carried by the carrier 10; the fluid flow channel 21 includes a plurality of sub-flow channels 210, and at least two sub-flow channels 210 are disposed independently of each other.

At least one sub-flow channel 210 is configured with the fluid outlet directed towards the carrier 10, which sub-flow channel 210 is denoted as first sub-flow channel 210A in fig. 1 and 2 for ease of understanding; at least one other of the sub-channels 210 is configured with the fluid outlet directed to a location outside the carrier 10 for cooling the corresponding region of the carrier 10 along its path of flow by the cooling fluid, which sub-channel 210 is shown as a second sub-channel 210B for ease of understanding.

In the wafer carrying device provided by the embodiment of the application, the wafer carrying device comprises a carrying piece 10 and a cooling piece 20, wherein the carrying piece 10 is used for carrying a wafer 1, the cooling piece 20 is made of a heat conducting material and is arranged on one side of the carrying piece 10, which is far away from a carrying surface 10a of the carrying piece, a plurality of sub-flow channels 210 are formed in the cooling piece 20, at least two sub-flow channels 210 are independently arranged to be respectively and independently filled with cooling fluid, and a fluid outlet of at least one sub-flow channel 210 faces the carrying piece 10 so as to directly discharge the cooling fluid onto the carrying piece 10; the fluid outlet of at least another of the sub-channels 210 is configured to discharge the cooling fluid to a position outside the carrier 10, so that the cooling fluid does not directly blow to the carrier 10, but cools the corresponding region of the carrier 10 on the path through which the cooling fluid flows by utilizing the heat conducting property of the cooling element 20, and the cooling fluid discharged to the position outside the carrier 10 can also take away heat through heat exchange although not directly blowing to the cooling element 20, and at the same time, the problem that the wafer 1 is offset due to the increase of the flow of the gas blown to the wafer 1 is not caused, so that the problem that the cooling cannot be effectively cooled due to the limitation of the flow of the introduced cooling gas in the prior art can be solved.

In one embodiment, at least one of the sub-channels 210 is configured with a fluid outlet directed to a location outside the carrier 10, e.g., the fluid outlet is configured to discharge cooling fluid out of the process chamber. In this way, the cooling fluid may flow only through the fluid passages within the cooling member 20 and not be exhausted into the process chamber, and thus the cooling fluid may be selected without being limited to inert cooling fluids and without adversely affecting the process reaction.

In other embodiments, at least one of the sub-channels 210 is configured with the fluid outlet directed to a location outside of the carrier 10, but may be configured to be located within the process chamber without discharging the cooling fluid toward the carrier 10.

In one embodiment, at least a portion of the sub-channels 210 extend circumferentially around the bearing surface 10a and around the center of the cooling element 20. By arranging at least the sub-flow channels 210 circumferentially along the carrying surface 10a, the wafer 1 on the carrying surface 10a can be cooled circumferentially to further facilitate cooling the wafer 1 circumferentially, which is further advantageous for cooling uniformity. In other embodiments, the sub-flow channels 210 may be arranged in other ways.

In one embodiment, as shown in fig. 1, the cooling element 20 is divided into a middle area S1 and an edge area S2 located at the periphery of the middle area S1 along a direction from the center of the carrying surface 10a to the edge of the carrying surface 10 a; wherein the fluid flow channels 21 are configured such that the distribution density of the sub-flow channels 210 in the edge region S2 is greater than the distribution density of the sub-flow channels 210 in the middle region S1.

Since the edge region S2 of the wafer 1 is at a higher temperature than the middle region S1 in the semiconductor process, such as the plasma chemical vapor deposition process, the cooling rate of the edge region S2 of the wafer 1 can be increased by configuring the distribution density of the sub-channels 210 of the edge region S2 to be greater than the distribution density of the sub-channels 210 of the middle region S1, so as to ensure the uniformity of the cooling effect of the center region and the edge region S2 of the wafer 1, and further increase the process yield of the wafer 1.

The distribution density of the sub-flow paths 210 herein may refer to the number of sub-flow paths 210 distributed per unit area. The cooling rate of the edge region S2 of the wafer 1 is increased by the difference in the distribution number of the sub-runners 210 in the middle region S1 and the edge region S2.

In other embodiments, the fluid flow channel 21 may also be configured such that the distribution density of the sub-flow channels 210 in the edge region S2 is equal to the distribution density of the sub-flow channels 210 in the middle region S1. The cooling rate of the edge region S2 is increased by other means. For example, the specific heat capacity of the cooling fluid introduced into the sub-flow channel 210 of the edge region S2 is greater than the specific heat capacity of the cooling fluid introduced into the sub-flow channel 210 of the middle region S1; or the sectional area size of the sub-flow path 210 of the edge region S2 is larger than the sectional area size of the sub-flow path 210 of the intermediate region S1, etc.

In an embodiment, the cooling element 20 is made of a heat-conducting material, and the cooling fluid discharged to a position outside the carrier 10 is not directly blown to the carrier 10, but because the heat-conducting property of the cooling element 20 is good, good heat exchange can be performed to cool the corresponding region of the carrier 10. The material of the cooling member 20 may include, but is not limited to, a high thermal conductive material such as copper.

In one embodiment, the sub-channels 210 inside the cooling element 20 may be formed by integrally molding a heat conductive material. However, the present invention is not limited thereto.

In one embodiment, as shown in fig. 1, the fluid flow channel 21 includes a first flow channel unit 211 for introducing a first cooling gas, the first flow channel unit 211 includes a plurality of sub-flow channels 210 concentrically arranged around the center of the bearing surface 10A, and the sub-flow channels 210 in the first flow channel unit 211 are first sub-flow channels 210A; the cooling member 20 includes a first surface facing the carrier 10, and gas outlets of the respective sub-channels 210 in the first channel unit 211 penetrate onto the first surface to discharge the cooling gas toward the carrier 10.

By arranging the first flow path unit 211 as a plurality of sub-flow paths 210 in concentric circles to introduce inert cooling gas such as helium, the plurality of sub-flow paths 210 in the first flow path unit 211 may be arranged circumferentially around the wafer 1, and the cooling gas may be uniformly discharged circumferentially onto the carrier 10 to improve the cooling uniformity effect.

In other embodiments, the first flow channel unit 211 for introducing the first cooling fluid may be arranged in other structures. For example, in other embodiments, several sub-channels 210 in the first channel unit 211 may also be arranged to be spirally disposed around the center of the carrying surface 10 a.

In one embodiment, the first cooling gas may be an inert cooling gas, such as helium. Since the first cooling gas is exhausted toward the carrier 10 and is exhausted into the process chamber, the inert cooling gas is selected to avoid affecting the process reaction.

In an embodiment, the gas inlets of the sub-channels 210 in the first channel unit 211 are disposed independently, so that different or the same cooling fluid can be introduced into each sub-channel 210 according to the temperature distribution in the wafer 1 processing process in practical application. For example, the cooling fluid introduced into the edge zone S2 may be different from the cooling fluid introduced into the intermediate zone S1. Compared with the scheme that each sub-flow channel 210 in the first flow channel unit 211 only shares the same gas inlet, the cooling effect on the wafer 1 is better, and the application range is wider.

In another embodiment, the sub-channels 210 in the first channel unit 211 may also share the same gas inlet, i.e. the sub-channels 210 in the first channel unit 211 may be fed with the same cooling fluid by the same gas supply device.

In an embodiment, in the first flow channel unit 211, a plurality of gas outlets are distributed along the extending direction of each sub-flow channel 210 at intervals, and the circumferential spacing between any two adjacent gas outlets on each sub-flow channel 210 is equal. By the above arrangement, the gas outlets in the respective sub-flow passages 210 are uniformly distributed, and cooling uniformity can be facilitated. In embodiments not shown, in some semiconductor processing steps, the distribution positions of the gas outlets may be set appropriately according to the temperature distribution at different positions on the wafer 1 during the reaction of the processing steps.

In an embodiment, as shown in fig. 2, radial distances between any two adjacent sub-channels 210 in the plurality of sub-channels 210 arranged in concentric circles in the first channel unit 211 are equal, so that each sub-channel 210 in the first channel unit 211 is uniformly distributed from the center of the first surface to the edge of the first surface. By uniformly distributing the sub-flow channels 210 in the first flow channel unit 211 in a plurality of circles from the center to the edge of the first surface, the cooling gas can be uniformly discharged onto the carrier 10, which is more advantageous for cooling uniformity.

In other not-illustrated embodiments, the respective sub-channels 210 in the first channel unit 211 may be arranged in such a manner that the distance between two adjacent sub-channels 210 gradually decreases from the center of the first surface toward the edge, so as to enhance the cooling effect of the edge region S2.

In an embodiment, as shown in fig. 2, the cross-sectional dimensions of the sub-channels 210 in the first channel unit 211 are all equal, and the cross-sectional dimensions of the single sub-channel 210 are all the same at any position along the extending direction of the single sub-channel 210, so that the flow rate of the cooling fluid discharged onto the carrier 10 at any position along the extending direction of the single sub-channel 210 is substantially the same, which is more beneficial to the uniformity of cooling the wafer 1. In other embodiments not shown, the cross-sectional dimensions of the different sub-channels 210 may also be unequal.

In an embodiment, as shown in fig. 1, the fluid flow channel 21 further includes a second flow channel unit 212, the second flow channel unit 212 includes at least one sub-flow channel 210, and the sub-flow channel 210 of the second flow channel unit 212 is a second sub-flow channel 210B. The second flow channel unit 212 is used for introducing a second cooling gas, and the specific heat capacity of the second cooling gas is larger than that of the first cooling gas. For example, the second cooling gas may be a cooling gas such as carbon dioxide (CO ₂) having a higher specific heat capacity than an inert cooling gas such as helium.

In one embodiment, taking the first cooling unit as helium gas and taking the second cooling unit as carbon dioxide gas as an example, the relationship between the pressure and the temperature of helium gas and carbon dioxide gas is shown in the table in fig. 3. Range in the table represents the difference between the maximum temperature and the minimum temperature of the wafer, and the smaller the Range, the more uniform the temperature. As can be seen from the table of fig. 3, the cooling effect of carbon dioxide as the cooling fluid is superior to that of helium.

The first cooling gas is introduced into the cooling piece 20 to cool the bearing piece 10, the second cooling gas with higher specific heat capacity is also introduced, and the fluid outlet for discharging the second cooling gas is not arranged towards the bearing piece 10, and the cooling piece 20 is made of a heat conducting material, so that the second cooling gas can rapidly take away heat, compared with the scheme that only inert cooling gas can be introduced, the flow of the first cooling gas can be in a limited range, the problems that the wafer 1 blows up due to overlarge flow are avoided, the heat exchange time is longer, the heat in the process cavity can be taken away to a greater extent, and the effects of protecting metal wires and reducing defects are achieved.

In one embodiment, as shown in fig. 1, the second flow channel unit 212 includes at least one sub-flow channel 210 disposed around the center of the carrying surface 10a, and the second flow channel unit 212 is distributed in the edge area S2, and the fluid outlet of the sub-flow channel 210 in the second flow channel unit 212 is configured to discharge the cooling fluid outside the chamber of the semiconductor processing apparatus. The cooling effect on the edge region S2 of the carrier surface 10a is increased by arranging at least one sub-flow channel 210, which is fed with the second cooling fluid, around the center of the carrier surface 10a in the edge region S2.

In one embodiment, as shown in fig. 2, the sub-flow channel 210 in the second flow channel unit 212 is bent and detoured multiple times in the extending direction thereof to form a serpentine sub-flow channel 210B. In this way, the path length of the sub-flow path 210 can be extended as much as possible in a limited space to further improve the cooling effect of the second flow path unit 212. As illustrated in fig. 2, the sub-channels 210 in the second channel unit 212 are configured in a serpentine shape to extend their path, but in other embodiments the channel paths may be extended in other ways.

In an embodiment, the sub-flow channels 210 in the second flow channel unit 212 may be disposed only around the center of the carrying surface 10 a. In other not illustrated embodiments, the sub-flow channels 210 in the second flow channel unit 212 may also have several turns. Also, the specific shape of the sub flow path 210 in the second flow path unit 212 is not limited thereto. In another embodiment, the shape of the sub-channels 210 in the second channel unit 212 can be circular, spiral, etc.

In one embodiment, as shown in fig. 1, the wafer carrier further includes at least two temperature control modules 22, and the temperature control modules 22 are used for monitoring the temperature. The cooling element 20 is divided into a middle area S1 and an edge area S2 located at the periphery of the middle area S1 along the direction from the center of the carrying surface 10a to the edge of the carrying surface 10a, at least one temperature control module 22 is disposed at the edge area S2 of the cooling element 20, and at least one temperature control module 22 is disposed at the middle area S1 of the cooling element 20. By arranging the temperature control module 22, the temperatures of the middle area S1 and the edge area S2 of the wafer 1 in the process can be monitored and reflected in real time, so as to adjust the flow rates of the first cooling fluid and the second cooling fluid in real time, thereby realizing the uniform and most efficient cooling effect of the whole plane.

In one embodiment, the temperature control modules 22 located in the middle region S1 and the edge region S2 may be configured to be disposed around the center of the bearing surface 10a, respectively, so as to monitor the temperatures of the middle region S1 and the edge region S2 in the circumferential direction. The specific number, shape, and placement of the temperature control modules 22 are not limited thereto.

Since the first flow channel unit 211 and the second flow channel unit 212 are independent of each other in the wafer carrier, the first cooling fluid and the second cooling fluid can be independently adjusted, and thus a larger customized space is provided.

The embodiment of the application also provides semiconductor process equipment, which comprises a process chamber for processing the wafer and the wafer bearing device provided by the embodiment of the application and arranged in the process chamber. The semiconductor processing equipment may include, but is not limited to, process equipment such as ion-assisted chemical vapor deposition equipment for treating the wafer 1 during semiconductor processing.

The foregoing is merely illustrative embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about variations or substitutions within the technical scope of the present application, and the application should be covered. Therefore, the protection scope of the application is subject to the protection scope of the claims.

Claims (10)

1. The wafer bearing device is arranged in the cavity of the semiconductor process equipment and is used for bearing and cooling the wafer; the wafer carrying device is characterized by comprising:

A carrier (10), the carrier (10) having a carrier surface (10 a) for carrying the wafer (1); and

The cooling piece (20), the cooling piece (20) adopts the heat conduction material to make, the cooling piece (20) set up in the one side that deviates from the bearing surface (10 a) of the bearing piece (10), and the inside distribution of cooling piece (20) has fluid runner (21), fluid runner (21) are used for letting in the cooling fluid, in order to cool off wafer (1) that the bearing piece (10) carried; wherein,

The fluid flow channel (21) comprises a plurality of sub flow channels (210), and at least two sub flow channels (210) are independently arranged to each other so as to respectively and independently feed cooling fluid;

At least one of the sub-channels (210) is configured with a fluid outlet towards the carrier (10);

At least one other of the sub-channels (210) is configured such that the fluid outlet is directed towards a position outside the carrier (10) for cooling the corresponding region of the carrier (10) along its flow path.

2. Wafer carrier according to claim 1, wherein at least part of the sub-flow channels (210) extend around the centre of the cooling element (20) in the circumferential direction of the carrier surface (10 a).

3. Wafer carrier according to claim 2, wherein the cooling element (20) is divided into a middle zone (S1) and an edge zone (S2) located at the periphery of the middle zone (S1) along a direction from the center of the carrier surface (10 a) towards the edge of the carrier surface (10 a); wherein the fluid flow channels are configured such that the distribution density of the sub-flow channels in the edge region (S2) is greater than the distribution density of the sub-flow channels in the intermediate region (S1).

4. A wafer carrier according to claim 3, wherein the fluid flow channel comprises a first flow channel unit (211) for introducing a first cooling gas, the first flow channel unit (211) comprising a plurality of sub-flow channels (210) arranged in concentric circles about the centre of the carrier surface (10 a); the cooling element (20) comprises a first surface facing the carrier (10), and the gas outlets of the individual sub-channels in the first channel unit (211) extend through to the first surface for discharging cooling gas towards the carrier (10).

5. The wafer carrier apparatus according to claim 4, wherein gas inlets on each sub-flow channel (210) in the first flow channel unit (211) are arranged independently of each other; and/or, in the first flow channel unit (211), each sub-flow channel (210) is provided with a plurality of gas outlets at intervals along the extending direction, and the circumferential intervals between any two adjacent gas outlets on each sub-flow channel (210) are equal.

6. The wafer carrier apparatus according to claim 4, wherein radial intervals between any adjacent two sub-channels (210) of the plurality of sub-channels (210) arranged in concentric circles in the first channel unit (211) are equal, so that each sub-channel (210) in the first channel unit (211) is uniformly distributed from a center of the first surface to an edge of the first surface;

And/or the cross-sectional dimensions of the sub-flow channels (210) in the first flow channel unit (211) are equal, and the cross-sectional dimensions of the sub-flow channels (210) are the same at any position in the extending direction.

7. The wafer carrier of claim 4, wherein the fluid flow passage further comprises a second flow passage unit (212), the second flow passage unit (212) for introducing a second cooling gas having a higher specific heat capacity than the first cooling gas; the second flow channel unit (212) comprises at least one sub-flow channel (210) arranged around the center of the bearing surface (10 a), the second flow channel unit (212) is distributed in the edge area (S2), and a fluid outlet of the sub-flow channel (210) of the second flow channel unit (212) is configured to discharge cooling fluid outside the chamber of the semiconductor process equipment.

8. The wafer carrier of claim 7, wherein the sub-flow channel (210) in the second flow channel unit (212) is bent a plurality of times in its extending direction to form a serpentine sub-flow channel (210).

9. The wafer carrier of claim 1, further comprising at least two temperature control modules (22), the temperature control modules (22) for monitoring temperature; along the direction from the center of the bearing surface (10 a) to the edge of the bearing surface (10 a), the cooling piece (20) is divided into a middle area (S1) and an edge area (S2) positioned at the periphery of the middle area (S1), at least one temperature control module (22) is arranged in the edge area (S2) of the cooling piece (20), and at least one temperature control module (22) is arranged in the middle area (S1) of the cooling piece (20).

10. A semiconductor processing apparatus comprising a process chamber for processing a wafer, and a wafer carrier according to any one of claims 1 to 9 disposed within the process chamber.