CN111383882B - Plasma processing apparatus and substrate holder for the same - Google Patents
Plasma processing apparatus and substrate holder for the same Download PDFInfo
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- CN111383882B CN111383882B CN201811606414.3A CN201811606414A CN111383882B CN 111383882 B CN111383882 B CN 111383882B CN 201811606414 A CN201811606414 A CN 201811606414A CN 111383882 B CN111383882 B CN 111383882B
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- heat
- layer
- heating
- substrate
- heating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a plasma processing device and a substrate support used for the same, wherein the substrate support comprises: the heating layer and the electrostatic chuck are sequentially arranged on the base, and the heat conduction layer is arranged between the heating layer and the electrostatic chuck; the electrostatic chuck is used for clamping the substrate; the heating layer is used for controlling the temperature of the substrate placed on the electrostatic chuck; the heat conduction layer comprises a plurality of grooves distributed on the heating layer and heat conduction metal fluid encapsulated in the grooves, and the heat conductivity of the heat conduction metal is more than 50W/mK; a thermally conductive metal fluid flows within the grooves to provide a uniform temperature to the substrate support. The heat-conducting metal flows to the area with lower temperature in the groove, so that the heat convection exchange in the area is fully realized; the temperature of the local substrate in each area is more uniform, and the yield of the substrate is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a plasma processing device and a substrate support for the same.
Background
In the fabrication of semiconductor devices, an Electrostatic force generated by an Electrostatic chuck (ESC) is generally used to support and fix a substrate during a deposition process, an etching process, and the like.
Electrostatic chucks, which are typically located at the bottom of a plasma processing chamber above a pedestal, typically include electrodes embedded in a ceramic dielectric layer; a substrate placed on the dielectric layer is held by applying a direct current to the electrodes, thereby creating electrostatic charges. Arranging a base below the ceramic dielectric layer to support the ceramic dielectric layer; be equipped with heat exchanger (chicken) in the base, heat exchanger is equipped with the zone of heating, and it is when handling the substrate, the zone of heating carries out the multizone control by temperature change to electrostatic chuck, and then can divide the temperature of regional adjustment substrate to the homogeneity of adjustment substrate sculpture reaches the highest quality output. In order to solve the problems, in the prior art, the temperature is more uniform mainly by sticking the solid heat conducting metal on the heating wire, but the heat conductivity of the solid heat conducting metal is limited, and heat exchange is lacked, so that the temperature of different parts of the heating layer is unevenly distributed, and further the temperature distribution of the substrate in the corresponding area is uneven.
Disclosure of Invention
The invention aims to provide a plasma processing device and a substrate support for the same, wherein a heat conduction layer is arranged between a heating layer and an electrostatic chuck, passes through a distribution groove and is formed by filling and sealing heat conduction metal fluid in the groove; the heat-conducting metal flows to the area with lower temperature in the groove, so that heat convection exchange in the area is fully realized; so that the temperature of the local substrate in each area is uniform and consistent, and the yield of the substrate is improved.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
as shown in fig. 1, the present embodiment provides a substrate holder comprising: the heating layer and the electrostatic chuck are sequentially arranged on the base, and the heat conduction layer is arranged between the heating layer and the electrostatic chuck; the electrostatic chuck is used for clamping a substrate; the heating layer is used for controlling the temperature of the substrate placed on the electrostatic chuck; the heat conduction layer comprises at least one groove distributed on the heating layer and heat conduction metal fluid encapsulated in the groove; the thermal conductivity of the heat-conducting metal is more than 50W/mK; the thermally conductive metal fluid flows within the grooves such that the substrate support has a uniform temperature.
Further, the groove is made of a metal material and/or a ceramic material having a melting point higher than that of the heat conductive metal.
Further, the heat conducting metal is made of one or more of mercury, sodium, potassium, calcium, lithium, gallium, indium, bismuth, tin, lead and antimony.
Further, the zone of heating is equipped with a plurality of zone of heating, each the zone of heating is through independent control power control heating, the heat-conducting layer covers the zone of heating.
Further, the heating layer is a circular disc, and each heating region is concentrically arranged at different radial distances relative to the center of the circular disc.
Further, the heat conductive layer includes a plurality of independent sub-heat conductive areas, each sub-heat conductive area corresponding to an underlying location of at least one independently controllable heating zone. .
Further, the grooves are spiral or multiple rings concentrically arranged with the center of the heating layer.
Furthermore, a plurality of through holes are also formed in the base, and the through holes penetrate through the heating layer and the heat conduction layer positioned on the heating layer; the groove does not pass through the through hole.
In another aspect, a plasma processing apparatus includes: a reaction chamber, a substrate support as described above disposed below the interior of the reaction chamber.
Compared with the prior art, the invention has the following advantages:
the heat conduction layer is arranged between the heating layer and the electrostatic chuck, passes through the distribution groove, and is formed by filling and sealing heat conduction metal fluid in the groove; the heat-conducting metal flows to the area with lower temperature in the groove, so that the heat convection exchange in the area is fully realized; so that the local substrate temperature in each area is more uniform.
Drawings
FIG. 1 is a schematic diagram of a plasma processing apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a substrate holder of a plasma processing apparatus according to an embodiment of the present invention.
Detailed Description
The present invention will now be further described by way of the following detailed description of a preferred embodiment thereof, taken in conjunction with the accompanying drawings.
In one embodiment, and as shown in FIGS. 1 and 2, a substrate support of the present invention comprises: a base 20, a heating layer 21 and an electrostatic chuck 23 sequentially arranged on the base 20, and a heat conduction layer 22 arranged between the heating layer 21 and the electrostatic chuck 23; the electrostatic chuck 23 is used for providing a supporting surface for supporting the substrate and clamping the substrate; the electrostatic chuck 23 is in thermal contact with the thermally conductive layer 22 and the substrate is in thermal contact with the electrostatic chuck 23.
The heating layer 21 is used to control the temperature of a substrate (not shown in fig. 1) placed on the electrostatic chuck 23. Said thermally conductive layer 22 comprises at least one trench 220 distributed over said heating layer 21, said trench 220 being curved along a tortuous path in a single plane and having an outer circumference that is substantially circular, and a fluid of thermally conductive metal 230 potted within said trench 220; the thermally conductive metal 230 fluid flows within the channel 220 such that the substrate on the substrate holder has a uniform temperature. In particular, the temperature of the electrostatic chuck 23 is controlled by heating or cooling the temperature of the substrate by the fluid flowing through the thermally conductive metal 230.
The thermal conductivity of the thermally conductive metal 230 is greater than 50W/mK. The heat conducting metal 230 is made of one or more of mercury, sodium, potassium, calcium, lithium, gallium, indium, bismuth, tin, lead and antimony. In the present embodiment, the groove 220 is made of a metal material and/or a ceramic material having a melting point higher than that of the heat conductive metal 230. The melting point of the heat conducting metal 230 is less than or equal to 5 ℃, when the heating layer 21 transfers the heat generated by the heat conducting metal 230 to the heat conducting layer 22 according to the heat transfer principle, the heat conducting metal is in a liquid state, specifically, the heat conducting metal is one of phase-change materials, and has a stable phase-change temperature, for example, 5 ℃, when the heat conducting layer absorbs external heat, the heat is absorbed by the heat conducting metal, the heat conducting metal gradually changes into the liquid state after absorbing heat, namely, the heat conducting metal is changed into a heat conducting metal fluid, the heat conducting metal fluid freely flows in the groove 220, and when the heat conducting metal fluid flows to a region with higher or lower temperature, heat exchange is generated, so that the heat conducting metal fluid per se has uniform temperature, the whole heat conducting layer 22 has uniform temperature, the electrostatic chuck 23 has uniform temperature, the substrate in thermal contact with the electrostatic chuck 23 has uniform temperature, and the yield of the substrate is improved.
Thus, it can flow freely within the grooves 220 to exchange heat with the lower heat regions for uniform temperature of the substrate on the substrate support.
The heating layer 21 is provided with a plurality of heating zones, and each heating zone is controlled to heat through an independent control power supply. The heating layers 21 are circular discs, each of which is concentrically arranged at a different radial distance with respect to the center of the circular disc. The heating zone is formed by heating wires which are arranged in a spiral or circular ring shape. The edges or the side edges of all the curve sections of each heating wire are not contacted with each other, the intervals among all the curve sections are approximately uniform, and the heating wires are not contacted with the heating sheets of other heating areas. The heat conductive layer covers the heating layer 21. In this embodiment, an insulating layer is further disposed between the heating layer 21 and the heat conduction layer 22.
The heater layer 21 further includes a cooling duct that curves along a tortuous path in a single plane and is generally circular with its inner and outer circumferences and that includes at least one fluid inlet passage and one fluid outlet passage with a fluid source connected therebetween, the fluid source being capable of controlling the temperature of the fluid and the rate of fluid flow into and out of the heater layer. When the zone of heating was used for cooling off electrostatic chuck, entrance way department fluid temperature was lower, and the zone of heating is owing to cool off electrostatic chuck, and inside fluid constantly absorbs the heat on the electrostatic chuck, and fluid temperature constantly risees, and when the exit channel department, fluid temperature can be higher than entrance way department temperature greatly usually to reduce this cooling effect to electrostatic chuck.
The groove 220 is a spiral shape concentrically disposed with the center of the heating layer 21, which is curved along a meandering path in a single plane and has a substantially circular shape inside and outside thereof.
The susceptor 20 is made of metal, the susceptor 20 is connected to a radio frequency power supply 24, and radio frequency power outputted from the radio frequency power supply 24 is inputted into the reaction chamber, so that plasma is generated above the susceptor 20 and plasma processing is performed on the substrate.
In the second embodiment, the grooves in the first embodiment are provided as a plurality of annular grooves, and the others are not changed. The plurality of rings are distributed on the heating layer 21 of each of the heat exchangers. Each annular groove is concentrically arranged at a different radial distance with respect to the center of the heating layer 21 of the circular disc. The communication channels are arranged among the annular grooves, so that the heat-conducting metal 20 can freely flow in the annular grooves, all areas of the heat-conducting layer have uniform temperature, all areas of the electrostatic chuck 23 in thermal contact with the heat-conducting layer have uniform temperature, the substrates placed on the electrostatic chuck 23 have uniform temperature, and the yield of the substrates is improved.
In the third embodiment, the grooves may be individually disposed in each heating zone of the heating layer 21, and the grooves between the heating zones may not be communicated, so that the substrate is temperature-controlled in different zones, and the heat-conducting metal fluid can freely flow in the corresponding grooves, so that the temperature in each heating zone is uniform.
Further, the base 20 is further provided with a plurality of through holes (not shown in fig. 1), which penetrate through the heating layer 21 and the heat conduction layer 22 on the heating layer 21. The through holes include, but are not limited to: a through hole through which a mandril of the jacking device (not shown in figure 1) passes, a through hole through which an electric wire of the temperature measuring device (not shown in figure 1) passes, other vent holes and the like. The jacking device is used for controlling the longitudinal height of the substrate support, and the temperature measuring device is used for measuring the temperature of the heating layer 21 and/or the heat conducting layer. Therefore, the trenches in the first to third embodiments do not pass through the through holes.
On the other hand, as shown in fig. 1, the present invention also discloses a plasma processing apparatus comprising: a reaction chamber 10, a substrate support as described above disposed below the interior of the reaction chamber.
Specifically, the plasma processing apparatus includes a reaction chamber 10 capable of being vacuumized, the reaction chamber includes a side wall and a bottom wall, and the whole reaction chamber 10 is made of metal and is grounded, so as to realize shielding and airtightness of the radio frequency electromagnetic field. An electrostatic chuck 23 comprising a substrate support at the bottom of the reaction chamber is used to support a substrate (wafer) to be processed, and the base 20 of the substrate support is also connected as a bottom electrode to at least one rf power supply 24 below. The rf power supply 24 may be provided in plurality. The radio frequency output by the radio frequency power supply 24 may be 2MHz, 13MHz or 60MHz, and the power output by the radio frequency power supply to the lower electrode may be adjusted according to the plasma concentration and the ion concentration. If the plasma processing apparatus is a Capacitively Coupled Plasma (CCP) processing apparatus, the upper portion of the reaction chamber 10 opposite to the substrate support includes an upper electrode (not shown in fig. 1), and the upper electrode further includes a reaction gas inlet device integrated therein and connected to a gas source for uniformly feeding a reaction gas to the substrate below. If the plasma processing apparatus is an Inductively Coupled Plasma (ICP) processing apparatus, the top of the reaction chamber 10 does not need to be provided with an upper electrode, but instead an inductive coil (not shown in fig. 1) is disposed above the top cover of the reaction chamber 10, a radio frequency power supply is connected to the inductive coil, and an electromagnetic field generated by the coil penetrates through the top cover of the reaction chamber and enters the reaction chamber 10 to form plasma. An edge ring (liner) is also disposed above the substrate support and surrounds the electrostatic chuck and the substrate to be processed to effect adjustment of the electric field, gas flow and temperature in the edge region of the substrate.
In summary, in the present invention, a heat conduction layer is disposed between the heating layer 21 and the electrostatic chuck on the substrate support, the heat conduction layer covers the heating layer 21, and the heat conduction layer is provided with grooves distributed on the heating layer 21 and a heat conduction metal fluid filled in the grooves. The heat-conducting metal fluid flows freely in the grooves, and generates heat exchange when flowing to a region with higher or lower temperature, so that the heat-conducting metal fluid has uniform temperature, the whole heat-conducting layer has uniform temperature, the electrostatic chuck has uniform temperature, the substrate in thermal contact with the electrostatic chuck has uniform temperature, and the yield of the substrate is improved.
During part of the process, it is desirable to have a controlled temperature distribution in substantially different regions due to plasma distribution, gas flow/radical distribution non-uniformity, etc., which may result in a need for a reverse distribution of substrate temperature to counteract the non-uniformity. The heat conducting layer in the invention can also be divided into a plurality of independent sub heat conducting areas, each sub heat conducting area also comprises a groove and a corresponding heat conducting metal fluid, and each heating area in a plurality of independent heating areas below the sub heat conducting areas respectively corresponds to one heating area. Thus, the middle layer of the heater obtains different heating power distribution through the heater, and then the temperature distribution in each small area is uniform through each sub heat conduction layer above the middle layer of the heater, and finally the uniform treatment effect on the whole substrate is obtained.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (9)
1. A substrate support, comprising: the heating layer and the electrostatic chuck are sequentially arranged on the base, and the heat conduction layer is arranged between the heating layer and the electrostatic chuck;
the electrostatic chuck is used for clamping a substrate;
the heating layer is used for controlling the temperature of the substrate placed on the electrostatic chuck;
the heat conduction layer comprises at least one groove distributed on the heating layer and heat conduction metal fluid encapsulated in the groove, and the heat conduction metal has the heat conductivity of more than 50W/mK; the thermally conductive metallic fluid flows within the grooves such that the substrate support has a uniform temperature.
2. The substrate support of claim 1,
the groove is made of a metal material and/or a ceramic material having a melting point higher than that of the heat conductive metal.
3. The substrate support of claim 1,
the heat conducting metal is made of one or more of mercury, sodium, potassium, calcium, lithium, gallium, indium, bismuth, tin, lead and antimony.
4. The substrate support according to claim 1, wherein the heating layer is provided with a plurality of heating zones, each heating zone being controlled to heat by an independent control power supply, the heat conductive layer covering the heating layer.
5. The substrate support of claim 4, wherein the heating layer is a circular disk, each of the heating regions being concentrically disposed at a different radial distance relative to a center of the circular disk.
6. The substrate support of claim 5, wherein the thermally conductive layer comprises a plurality of independent sub-thermally conductive areas, each sub-thermally conductive area corresponding to an underlying location of the at least one independently controllable heating zone.
7. The substrate support of claim 6, wherein the groove is in the shape of a spiral or a plurality of rings disposed concentrically with the center of the heating layer.
8. The substrate support according to any of claims 1 to 7, wherein the base further comprises a plurality of through holes extending through the heating layer and a heat conductive layer disposed on the heating layer; the groove does not pass through the through hole.
9. A plasma processing apparatus, comprising:
a reaction chamber, the substrate holder according to any one of claims 1 to 8 disposed below the inside of the reaction chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811606414.3A CN111383882B (en) | 2018-12-27 | 2018-12-27 | Plasma processing apparatus and substrate holder for the same |
| TW108145740A TWI725666B (en) | 2018-12-27 | 2019-12-13 | Plasma processing device and substrate support for processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811606414.3A CN111383882B (en) | 2018-12-27 | 2018-12-27 | Plasma processing apparatus and substrate holder for the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111383882A CN111383882A (en) | 2020-07-07 |
| CN111383882B true CN111383882B (en) | 2023-03-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811606414.3A Active CN111383882B (en) | 2018-12-27 | 2018-12-27 | Plasma processing apparatus and substrate holder for the same |
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| Country | Link |
|---|---|
| CN (1) | CN111383882B (en) |
| TW (1) | TWI725666B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118366911A (en) * | 2023-01-19 | 2024-07-19 | 江苏鲁汶仪器股份有限公司 | Electrostatic chuck and semiconductor chip processing equipment |
| CN116110829A (en) * | 2023-03-02 | 2023-05-12 | 合肥开悦半导体科技有限公司 | Hot plate for heating by utilizing metallic tin |
| CN118335585B (en) * | 2024-06-11 | 2024-09-27 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processing device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582375A (en) * | 2005-10-20 | 2009-11-18 | 应用材料公司 | Capacity coupling plasma reactor with temperature uniform distribution wafer supporting |
| CN102270561A (en) * | 2010-06-07 | 2011-12-07 | 朗姆研究公司 | Plasma processing chamber component having adaptive thermal conductor |
| CN104752136A (en) * | 2013-12-30 | 2015-07-01 | 中微半导体设备(上海)有限公司 | Plasma processing device and electrostatic chuck thereof |
| CN108062124A (en) * | 2016-11-08 | 2018-05-22 | 中微半导体设备(上海)有限公司 | A kind of temperature control wafer erecting bed and its temperature control method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW492075B (en) * | 1999-04-06 | 2002-06-21 | Tokyo Electron Ltd | Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage |
| US6583980B1 (en) * | 2000-08-18 | 2003-06-24 | Applied Materials Inc. | Substrate support tolerant to thermal expansion stresses |
| CN100388434C (en) * | 2003-03-12 | 2008-05-14 | 东京毅力科创株式会社 | Substrate supporting structure for semiconductor processing, and plasma processing device |
| TWI522013B (en) * | 2009-03-30 | 2016-02-11 | Tokyo Electron Ltd | Plasma processing device and plasma processing method |
| US9685356B2 (en) * | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
-
2018
- 2018-12-27 CN CN201811606414.3A patent/CN111383882B/en active Active
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2019
- 2019-12-13 TW TW108145740A patent/TWI725666B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582375A (en) * | 2005-10-20 | 2009-11-18 | 应用材料公司 | Capacity coupling plasma reactor with temperature uniform distribution wafer supporting |
| CN102270561A (en) * | 2010-06-07 | 2011-12-07 | 朗姆研究公司 | Plasma processing chamber component having adaptive thermal conductor |
| CN104752136A (en) * | 2013-12-30 | 2015-07-01 | 中微半导体设备(上海)有限公司 | Plasma processing device and electrostatic chuck thereof |
| CN108062124A (en) * | 2016-11-08 | 2018-05-22 | 中微半导体设备(上海)有限公司 | A kind of temperature control wafer erecting bed and its temperature control method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202025380A (en) | 2020-07-01 |
| CN111383882A (en) | 2020-07-07 |
| TWI725666B (en) | 2021-04-21 |
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