CN110923642B

CN110923642B - Sputtering device

Info

Publication number: CN110923642B
Application number: CN201911094111.2A
Authority: CN
Inventors: 李默林
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2019-11-11
Filing date: 2019-11-11
Publication date: 2022-07-22
Anticipated expiration: 2039-11-11
Also published as: KR20230164245A; TWI826742B; KR20220074934A; CN110923642A; TW202118888A; WO2021093650A1

Abstract

The present invention relates to a sputtering apparatus including: a chamber; the base is arranged in the cavity and used for bearing a workpiece to be processed; the sputtering mechanism is arranged on the cavity and is used for sputtering the workpiece to be processed; the ejector pin mechanism is arranged in the cavity and used for jacking the workpiece to be machined from the base and bearing the workpiece to be machined when the workpiece to be machined is subjected to a backflow process; and the microwave heating mechanism is arranged in the cavity and comprises a moving unit and a microwave emitter, the microwave emitter is connected with the moving unit, and the moving unit is used for moving the microwave emitter to the lower part of the workpiece to be processed to heat the workpiece to be processed when the workpiece to be processed finishes a sputtering process and is borne by the thimble mechanism. The microwave emitter generates microwaves, the microwaves directly act on polar molecules in the workpiece to be processed to heat the workpiece to be processed, and the heating efficiency is improved, so that the cycle time of the reflow process is effectively shortened, and the production efficiency is improved.

Description

Sputtering device

Technical Field

The invention belongs to the technical field of sputtering, and particularly relates to a sputtering device.

Background

The copper interconnection process is an indispensable process for manufacturing the back end of a chip in the prior art, and the method of the copper interconnection process comprises the steps of depositing a diffusion barrier layer in etched holes and etched channels, then depositing a copper seed crystal layer, and finally filling the channels through electroplating to form a copper interconnection circuit. However, as the chip feature size shrinks below 20 nm, the via to trench opening and aspect ratio decreases to 3.8: 1, partial interlaminar through holes (via) can even reach 7: 1 or higher, when a copper seed layer is deposited by a Physical Vapor Deposition (PVD) method, copper grows faster at the opening of the trench to cause a top overhang, and the top overhang is sealed in advance in the subsequent electroplating process along with the increase of the aspect ratio to cause that the trench cannot be completely filled to form a cavity, thereby affecting the resistance of the interconnected copper wires and seriously affecting the electrical performance of the chip or even causing failure.

As a copper reflow technology for solving the problem of the process with the chip characteristic size of below 20 nanometers, attention is paid to the technology, under the action of high temperature (generally above 300 ℃), the surface mobility and the grain aggregation force of PVD deposited copper are enhanced at low temperature, under the diffusion action and the capillary action of an etched pore channel, copper atoms on the surface of a deposited copper film are migrated and flow into the bottom of the etched deep hole, so that the generation of a cavity in a channel can be avoided, and the whole reflow process can be formed by combining a plurality of cycles until the deep hole is completely filled according to a filling structure.

The PVD apparatus used in the copper reflow technique in the prior art generally includes a circular reaction chamber, a supporting base disposed in the chamber for supporting a wafer, and a target disposed above the supporting base, wherein the target is sealed in the vacuum chamber, and the magnetron constrains plasma below the target. During sputtering, a Direct Current (DC) power supply applies a bias voltage to the target, causing it to become negatively biased with respect to the grounded chamber, so that the argon gas discharges to generate a plasma, which attracts positively charged argon ions to the negatively biased target. When the energy of the argon ions is high enough, metal atoms can escape the target surface and deposit on the wafer.

To achieve copper reflow, a heating lamp is usually added to the chamber, and after the deposition of the thin film, the susceptor is lowered, and then the substrate is raised above the lamp by the pins, and the lamp is used to heat the substrate.

In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:

by adopting the scheme, the wafer is heated by the heat radiation mode with a low heating rate and low heating efficiency, so that one reflow cycle takes much time (generally more than 30 minutes), and if a plurality of copper reflow cycles are needed, the time is longer, and the yield is seriously influenced.

Therefore, an in-situ copper reflow sputtering apparatus is urgently needed to accelerate the heating rate of the heated wafer and improve the heating efficiency, thereby reducing the time consumption of the reflow cycle and increasing the yield.

Disclosure of Invention

In order to solve the problems that the wafer heating rate is low and the heating efficiency is low in a heat radiation mode used in the prior art, the embodiment of the invention provides a sputtering device. The specific technical scheme is as follows:

in a first aspect, a sputtering apparatus is provided for performing a sputtering process on a workpiece to be processed, including:

a chamber;

the base is arranged in the cavity and used for bearing a workpiece to be processed;

the sputtering mechanism is arranged on the cavity and is used for sputtering the workpiece to be processed;

the ejector pin mechanism is arranged in the cavity and used for jacking the workpiece to be machined from the base and bearing the workpiece to be machined when the workpiece to be machined is subjected to a reflow process; and

the microwave heating mechanism is arranged in the cavity and comprises a moving unit and a microwave emitter, the microwave emitter is connected with the moving unit, and the moving unit is used for moving the microwave emitter to the position below the workpiece to be processed when the workpiece to be processed completes a sputtering process and is borne by the thimble mechanism so as to heat the workpiece to be processed.

In a first possible implementation form of the first aspect, the chamber comprises:

the sputtering cavity is used for carrying out sputtering process on the workpiece to be processed; and

the storage cavity is located below the sputtering cavity and is coaxially arranged with the sputtering cavity, the microwave heating mechanism is arranged in the storage cavity and is used for conducting a backflow process on a workpiece to be processed, a through hole communicated between the storage cavity and the sputtering cavity is formed, the base and the through hole are correspondingly arranged in the storage cavity, when the sputtering process is conducted on the workpiece to be processed, the base rises into the sputtering cavity through the through hole, after the sputtering process is completed on the workpiece to be processed, the base descends into the storage cavity through the through hole, and the backflow process is conducted on the workpiece to be processed.

In a second possible implementation manner of the first aspect, the sputtering mechanism includes:

the target is arranged at the top of the chamber;

the magnetron is arranged on the back of the target material; and

and the direct current power supply is connected with the target and is used for applying bias voltage to the target.

In a third possible implementation manner of the first aspect, the ejector pin mechanism includes a plurality of ejector pins, and the plurality of ejector pins are received in the base and extend out of the base when the workpiece to be processed is subjected to the reflow process, so as to jack up the workpiece to be processed from the base and bear the workpiece to be processed.

With reference to the third possible implementation manner of the first aspect, in a fourth possible implementation manner of the first aspect, the multiple ejector pins are made of a material capable of absorbing microwaves.

With reference to the fourth possible implementation manner of the first aspect, in a fifth possible implementation manner of the first aspect, each of the plurality of ejector pins is made of a ceramic material.

In a sixth possible implementation form of the first aspect, the mobile unit comprises:

the rotating arm is vertically arranged in the cavity and is positioned on the side edge of the base; and

one end of the transmission arm is connected with the rotating arm, the transmission arm can be driven by the rotating arm to rotate, and the microwave emitter is embedded at the other end of the transmission arm.

With reference to the sixth possible implementation manner of the first aspect, in a seventh possible implementation manner of the first aspect, the electrical connection line of the microwave emitter is led out of the chamber through the rotating arm.

With reference to the sixth possible implementation manner of the first aspect, in an eighth possible implementation manner of the first aspect, the transmission arm is made of metal, and a cooling water channel is further arranged in the transmission arm and is used for cooling the microwave emitter.

With reference to the eighth possible implementation manner of the first aspect, in a ninth possible implementation manner of the first aspect, the cooling water channel includes a water inlet pipeline, a cooling pipeline, and a water outlet pipeline, the water inlet pipeline and the water outlet pipeline are disposed in the transmission arm, two ends of the cooling pipeline are respectively communicated with the water inlet pipeline and the water outlet pipeline, and the cooling pipeline is spirally wound on the microwave emitter.

Compared with the prior art, the invention has the advantages that:

the sputtering device of the invention generates microwave through the microwave emitter, and directly acts on the polar molecules in the workpiece to be processed (wafer) to heat the workpiece to be processed, and the heating rate of the workpiece to be processed is high. Meanwhile, due to the reflection effect of the metal on the microwaves, the metal film sputtered and deposited on the surface of the workpiece to be machined can effectively reflect the microwaves emitted from the lower part into the workpiece to be machined, so that the utilization efficiency of the microwaves is further improved, the heating efficiency is improved, the whole workpiece to be machined can be heated quickly, the backflow process is realized, the period of the backflow process is effectively shortened, and the production efficiency is improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a sputtering apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic structural view of a sputtering apparatus according to an embodiment of the present invention when heating a workpiece to be processed.

Fig. 3 is a schematic top view of a microwave transmitter of an embodiment of the present invention embedded in a transmission arm and a plurality of thimbles.

FIG. 4 is a top view of a microwave launcher of one embodiment of the present invention moved to below a workpiece to be machined.

Fig. 5 is a schematic diagram of the arrangement of cooling channels in a transfer arm, in accordance with an embodiment of the present invention.

Detailed Description

To make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

In an embodiment of the present invention, please refer to fig. 1, which shows a schematic structural diagram of a sputtering apparatus 1 according to an embodiment of the present invention. The sputtering device 1 is used for performing a sputtering process on a workpiece 12 to be processed, and bombards the surface of the target 11 with particles (ions or neutral atoms, molecules) with certain energy, so that the atoms or molecules near the surface of the target 11 obtain enough energy to finally escape from the surface of the target 11 and be deposited on the workpiece 12 to be processed. The sputtering device 1 comprises a cavity 2, a base 3, a sputtering mechanism 4, an ejector pin mechanism 5 and a microwave heating mechanism 6, wherein:

the chamber 2 is mainly used for providing a containing space for a sputtering process and a reflow process of the workpiece 12 to be processed. Referring to fig. 1 again, the chamber 2 disclosed in the present embodiment includes a sputtering chamber 21 and a receiving chamber 22, the sputtering chamber 21 is used for performing a sputtering process on the workpiece 12 to be processed, a target 11 is disposed at a top portion in the sputtering chamber 21, and the target 11 may be a sputtering material such as copper (Cu), tantalum (Ta), titanium (Ti), or aluminum (Al), but is not limited thereto. During the sputtering process, metal atoms or molecules on the surface of the target 11 are deposited on the workpiece 11 to be processed, and a metal film covering the workpiece 12 to be processed is formed.

The receiving cavity 22 is located below the sputtering cavity 21 and is coaxially disposed with the sputtering cavity 21, the receiving cavity 22 is used for performing a reflow process on the workpiece 12 to be processed, a through hole 23 is formed between the receiving cavity 22 and the sputtering cavity 21, and the receiving cavity 22 is used for the reflow process of the workpiece 12 to be processed, but the structure of the chamber 2 is not limited thereto, and those skilled in the art may select the chamber 2 with other suitable structures according to the teachings of the embodiment. The sputtering chamber 21 and the receiving chamber 22 disclosed in the present embodiment are disposed in the same chamber 24, and the chamber 24 is generally a circular ring type reaction chamber, but not limited thereto.

The susceptor 3 is disposed in the chamber 2 for carrying a workpiece 12 to be processed, and the workpiece 12 to be processed is preferably, but not limited to, a wafer. Referring to fig. 1 again, the base 3 disclosed in the present embodiment is disposed in the accommodating cavity 22 corresponding to the through hole 23, and the base 3 is preferably made of ceramic material, when the sputtering process is performed on the workpiece 12 to be processed, the base 3 is lifted into the sputtering cavity 21 through the through hole 23, so as to drive the workpiece 12 to be processed to be lifted into the sputtering cavity 21, and at this time, the workpiece 12 to be processed is located right below the target 11, so as to perform the sputtering process on the workpiece 12 to be processed. After the sputtering process is completed on the workpiece 12 to be processed, the base 3 descends into the receiving cavity 22 through the through hole 23, and drives the workpiece 12 to be processed to descend into the receiving cavity 22, and the workpiece 12 to be processed is subjected to the reflow process in the receiving cavity 22, but the invention is not limited thereto.

The sputtering mechanism 4 is disposed on the chamber 2, and the sputtering mechanism 4 is used for a sputtering process of the workpiece 12 to be processed. The sputtering mechanism 4 disclosed in this embodiment includes a target 11, a magnetron 41, and a dc power supply (not shown), wherein the target 11 is disposed on the top of the chamber 2, and the magnetron 41 is disposed on the back of the target 11. Typically, the magnetron 41 is disposed at the top end of the cavity 24, but not limited thereto. There may be no particular requirement for the selection of the magnetron 41 in the present embodiment, as is conventional to those skilled in the art. Referring again to fig. 1, the chamber 2 is grounded, and a dc power supply is connected to the target 11 in the chamber 2 (sputtering chamber 21) for applying a bias voltage to the target 11.

During sputtering of the sputtering mechanism 4, the dc power supply applies a bias voltage to the target 11, so that the target becomes a negative pressure with respect to the grounded chamber 2, so that the argon gas discharges to generate plasma, and the positively charged argon ions are attracted to the negatively biased target 11, and when the energy of the argon ions is sufficiently high, metal atoms can escape from the surface of the target and move downward, and deposit on the upper surface of the workpiece to be processed 12 to form a metal film covering the workpiece to be processed 12, thereby completing the magnetron sputtering process, but the structure of the sputtering mechanism 4 is not limited thereto, and those skilled in the art can select other suitable types of sputtering processes according to actual sputtering requirements. Referring to fig. 1 again, the ejector pin mechanism 5 is disposed in the cavity 2, and the ejector pin mechanism 5 is used for lifting the workpiece 12 to be processed from the base 3 and carrying the workpiece 12 to be processed when the workpiece 12 to be processed is subjected to the reflow process, so as to heat the back surface of the workpiece 12 to be processed conveniently. The ejector pin mechanism 5 disclosed in the present embodiment includes a plurality of ejector pins 51, the plurality of ejector pins 51 are received in the base 3, the plurality of ejector pins 51 are used for performing a reflow process on the workpiece 12 to be processed, the base 3 is extended out, the workpiece 12 to be machined is jacked up from the base 3, and the workpiece 12 to be machined is carried, however, the arrangement of the plurality of ejector pins 51 is not limited thereto, and those skilled in the art can also select other suitable arrangement according to the teachings of the present embodiment, for example, the plurality of ejector pins 51 can also be arranged below the base 3, when the workpiece 12 to be processed is subjected to the reflow process, the plurality of ejector pins 51 penetrate through the base 3, and the workpiece 12 to be processed is ejected from the base 3 and carried on the workpiece 12 to be processed, and the plurality of ejector pins 51 may penetrate through the base 3 by the plurality of ejector pins 51 being lifted up and penetrating through the base 3, or may penetrate through the base 3 by the base 3 being lowered, but the invention is not limited thereto.

Meanwhile, since the metal material can reflect the microwaves, if the plurality of thimble 51 is made of the metal material, when the thimble 51 contacts the workpiece 12 to be processed, the contact position of the plurality of thimble 51 absorbs the microwaves to a small extent, so that the temperature of the workpiece 12 to be processed is not uniformly raised, therefore, the plurality of thimble 51 disclosed in this embodiment is made of a material capable of absorbing the microwaves, preferably, ceramic, so as to avoid the problem of non-uniform temperature rise of the contact position of the plurality of thimble 51 and the workpiece 12 to be processed, but not limited thereto, and those skilled in the art may select other suitable materials capable of absorbing the microwaves to make the plurality of thimble 51 according to actual requirements.

In a preferred embodiment, please refer to fig. 3, which shows a schematic top view of a microwave emitter 62 embedded in a transmission arm 611 and a plurality of pins 51 according to an embodiment of the present invention. The number of the ejector pins 51 is three, when the three ejector pins 51 jack up the workpiece 12 to be processed, the three ejector pins 51 jack up to positions close to the side edges of the workpiece 12 to be processed respectively, and the three ejector pins 51 are close to different side edges respectively, so as to increase the stability of the workpiece during jacking up, but not limited to this, a person skilled in the art may also select to set a plurality of ejector pins 51 corresponding in number according to actual requirements, for example, four, five or more than five may also be selected to set.

The microwave heating mechanism 6 is disposed in the chamber 2. Referring to fig. 1 again, the microwave heating mechanism 6 disclosed in the present embodiment is disposed in the receiving cavity 22, but not limited thereto. Referring to fig. 2, a schematic structural diagram of the sputtering apparatus 1 according to an embodiment of the invention is shown when the workpiece 12 is heated. The microwave heating mechanism 6 comprises a moving unit 61 and a microwave emitter 62, the microwave emitter 62 is connected to the moving unit 61, the moving unit 61 is configured to move the microwave emitter 62 to a position below the workpiece 12 to be processed when the workpiece 12 to be processed completes the sputtering process and is carried by the thimble mechanism 5, and emit microwaves to the workpiece 12 to be processed through the microwave emitter 62 to heat the workpiece 12 to be processed to the reflow temperature, so as to implement the reflow process, wherein the microwaves generally refer to electromagnetic waves with a frequency of 300 plus 300,000MHz and a wavelength of 1m or less. The microwave emitter 62 shown in this embodiment is not limited to be applied to the reflow process after magnetron sputtering shown in the above embodiments, and may be applied to the reflow process after other sputtering processes. There may be no particular requirement for the choice of microwave emitter 62 in this embodiment, as is conventional to those skilled in the art.

In a preferred embodiment, referring to fig. 1 and 2, the moving unit 61 includes a transmission arm 611 and a rotating arm 612, the rotating arm 612 is vertically disposed in the chamber 2 (the receiving cavity 22) and located at a side of the base 3, and a rotation angle of the rotating arm 612 is preferably 90 degrees, but not limited thereto, and a person skilled in the art may select to set a corresponding rotation angle according to actual situations. The rotation of the rotating arm 612 is usually driven by a stepping motor (not shown) and a corresponding driving structure (such as a transmission gear box, etc.), but the invention is not limited thereto, and a person skilled in the art can select other suitable driving means according to the general knowledge of the person skilled in the art.

One end of the transfer arm 611 is connected to the rotating arm 612. Preferably, the transmission arm 611 is vertically connected to the rotating arm 612, and the connection manner may be a bolt connection or a welding connection, but not limited thereto. When the rotating arm 612 rotates, it can drive the transmitting arm 611 to rotate around the rotating arm 612 as the rotating axis, and when the transmitting arm 611 rotates, it is necessary to ensure that the rotating path thereof does not collide with the thimble mechanism 5.

Referring to fig. 3 again, the microwave emitter 62 is embedded in the other end of the transmission arm 611, and the embedding manner may be, but is not limited to, that an embedded groove corresponding to the microwave emitter 62 is disposed in the other end of the transmission arm 611, and the microwave emitter 62 is embedded in the embedded groove, so as to mount and fix the microwave emitter 62 on the transmission arm 611. The present embodiment further discloses that the electrical connection of the microwave emitter 62 is led out of the chamber 2 through the rotating arm 612 to achieve connection with an external controller, but not limited thereto.

Referring to fig. 4, a top view of the microwave emitter 62 moving under the workpiece 12 is shown according to one embodiment of the present invention. The transmission arm 611 rotates to drive the microwave emitter 62 to rotate, and moves to a position below the workpiece 12 to be processed, and the microwave emitter 62 emits microwaves to the workpiece 12 to be processed, so as to heat the workpiece 12 to be processed, but the structure of the moving unit 61 is not limited thereto, and those skilled in the art can select another moving unit 61 with another suitable structure according to the teachings of the embodiment.

Since the microwave emitted from the microwave emitter 62 may damage the base 3 made of ceramic, the transmission arm 611 of the embodiment is made of metal to reflect the microwave and protect the base 3. Meanwhile, since the temperature of the transmission arm 611 made of metal is relatively fast and high, and the microwave emitter 62 is disposed on the transmission arm 611, the temperature of the microwave emitter 62 is too high under long-time work, so that the microwave emitter is failed, please refer to fig. 3 and 4 again, in this embodiment, a cooling water channel 613 is further disposed in the transmission arm 611, and the microwave emitter 62 is cooled by water cooling, but not limited thereto.

In a preferred embodiment, referring to fig. 5, a schematic layout of cooling channels 613 in a transfer arm 611 is shown, in accordance with an embodiment of the present invention. The cooling water channel 613 includes a water inlet pipe 6131, a cooling pipe 6132 and a water outlet pipe 6133, the water inlet pipe 6131 and the water outlet pipe 6133 are disposed in the transmission arm 611, two ends of the cooling pipe 6132 are respectively communicated with the water inlet pipe 6131 and the water outlet pipe 6133, so as to change water for the cooling pipe 6132 in real time through the water inlet pipe 6131 and the water outlet pipe 6133, the cooling pipe 6132 is spirally wound on the microwave emitter 62, and the winding manner can increase the contact area with the microwave emitter 62, so as to increase the water cooling efficiency, but not limited thereto.

The sputtering apparatus 1 of the present embodiment is mainly applied to a PVD device, and is used for a sputtering process and a reflow process in a PVD process. Referring to fig. 1 again, in the sputtering process, the target 11 is fixed at the top end of the chamber 2 (sputtering chamber 21), the workpiece 12 to be processed is placed on the base 3, the base 3 is lifted to the sputtering chamber 21 and drives the workpiece 12 to be processed to be lifted to the sputtering chamber 21, the sputtering mechanism 4 acts on the target 11 to make metal atoms or molecules on the surface of the target 11 escape and move downward to be deposited on the workpiece 12 to be processed, thereby forming a metal film covering the workpiece 12 to be processed.

In the reflow process, the base 3 descends into the receiving cavity 22, and drives the workpiece 12 to be processed to descend into the receiving cavity 22, and the ejector pin mechanism 5 jacks up the workpiece 12 to be processed from the base 3 and carries the workpiece 12 to be processed. Referring to fig. 2 again, the rotating arm 612 rotates to drive the transmission arm 611 to rotate by taking the rotating arm 612 as a rotation axis, so as to drive the microwave emitter 62 to rotate, and move to the lower side of the workpiece to be processed 12, and control the microwave emitter 62 to generate microwaves, so as to directly act on the polar molecules in the workpiece to be processed 12, and heat the workpiece to be processed 12, and meanwhile, the metal film sputtered and deposited on the upper surface of the workpiece to be processed 12 can effectively reflect the microwaves emitted from the lower side into the workpiece to be processed 12, so that the utilization efficiency of the microwaves is further improved, thereby improving the heating efficiency, enabling the whole workpiece to be processed 12 to be heated up quickly, and realizing a reflow process, thereby effectively shortening the reflow process cycle time and improving the production efficiency.

The foregoing description shows and describes several preferred embodiments of the invention, but as aforementioned, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A sputtering device is used for sputtering a workpiece to be processed, and is characterized by comprising:

a chamber;

the base is arranged in the cavity and used for bearing the workpiece to be processed;

the sputtering mechanism is arranged on the cavity and is used for the sputtering process of the workpiece to be processed;

the microwave heating mechanism is arranged in the cavity and comprises a moving unit and a microwave emitter, the microwave emitter is connected with the moving unit, and the moving unit is used for moving the microwave emitter to the position below the workpiece to be processed to heat the workpiece to be processed when the workpiece to be processed finishes the sputtering process and is carried by the thimble mechanism;

the ejector pin mechanism comprises a plurality of ejector pins, the ejector pins are accommodated in a base, and when the workpiece to be machined is subjected to the reflow process, the ejector pins extend out of the base, jack the workpiece to be machined from the base and bear the workpiece to be machined; the plurality of thimbles are made of materials capable of absorbing microwaves.

2. The sputtering apparatus of claim 1, wherein the chamber comprises:

the sputtering cavity is used for carrying out the sputtering process on the workpiece to be processed; and

the storage cavity is located below the sputtering cavity and is coaxially arranged with the sputtering cavity, the microwave heating mechanism is arranged in the storage cavity and is used for carrying out the backflow process on the workpiece to be processed, a through hole communicated with the sputtering cavity is formed between the storage cavity and the sputtering cavity, the base corresponds to the through hole and is arranged in the storage cavity, the base is arranged in the storage cavity, the workpiece to be processed is carried out during the sputtering process, the base passes through the through hole and rises to the sputtering cavity, the workpiece to be processed is completed after the sputtering process, the base passes through the through hole and descends to the storage cavity, and the workpiece to be processed is carried out on the backflow process.

3. The sputtering apparatus according to claim 1, wherein said sputtering mechanism comprises:

the target is arranged at the top of the chamber;

the magnetron is arranged on the back of the target material; and

4. The sputtering apparatus according to claim 1, wherein each of the plurality of pins is made of a ceramic material.

5. The sputtering apparatus according to claim 1, wherein said moving unit comprises:

and one end of the transmission arm is connected with the rotating arm, the transmission arm can pass through the rotating arm to be driven to rotate, and the microwave emitter is embedded at the other end of the transmission arm.

6. The sputtering apparatus of claim 5 wherein electrical connections of said microwave emitter exit said chamber through said rotating arm.

7. The sputtering device according to claim 5, wherein the transport arm is made of metal, and a cooling channel is disposed in the transport arm for cooling the microwave emitter.

8. The sputtering apparatus according to claim 7, wherein the cooling water channel comprises a water inlet pipeline, a cooling pipeline and a water outlet pipeline, the water inlet pipeline and the water outlet pipeline are disposed in the transport arm, two ends of the cooling pipeline are respectively communicated with the water inlet pipeline and the water outlet pipeline, and the cooling pipeline is spirally wound around the microwave emitter.