WO2015158152A1

WO2015158152A1 - Pore deposition process on substrate and semiconductor processing device

Info

Publication number: WO2015158152A1
Application number: PCT/CN2014/094380
Authority: WO
Inventors: 边国栋
Original assignee: 北京北方微电子基地设备工艺研究中心有限责任公司
Priority date: 2014-04-15
Filing date: 2014-12-19
Publication date: 2015-10-22
Also published as: KR20160138296A; CN105088151A; SG11201607490RA

Abstract

The present invention provides a pore deposition process on a substrate and a semiconductor processing device. In the pore deposition process on the substrate, a metal particle migration process is performed at least once. The metal particle migration process comprises the following steps: step S100, forming a metal layer in a pore on the substrate by sputtering deposition; and step S200, heating the substrate with the metal layer formed thereon to a preset temperature so that metal particles in the metal layer gradually migrate from the top of the pore to the bottom of the pore. The pore deposition process on the substrate and the semiconductor processing device provided in the present invention not only can improve the coverage rate of metal particles on the side wall in the pore so as to provide favorable conditions for a subsequent pore filling process, but also have no special requirements on the size of the pore and thus have a wide application range.

Description

Pore deposition process on substrate and semiconductor processing equipment

Technical field

The invention belongs to the technical field of semiconductor processing, and in particular relates to a pore deposition process on a substrate and a semiconductor processing device.

Background technique

A relatively wide range of applications in copper interconnect technology is the dual embedded process (also known as the dual damascene process). Specifically, as shown in FIG. 1, the dual embedded process includes the following steps:

Step S1, depositing a silicon nitride film 1 on the upper surface of the substrate for terminating the etching of the subsequently deposited dielectric material layer 2;

Step S2, depositing a low dielectric constant dielectric material layer 2 having a certain thickness on the surface of the silicon nitride film 1;

Step S3, performing photolithography on the dielectric material layer 2 to form a via pattern thereon for realizing interconnection lines in the vertical direction;

Step S4, etching on the dielectric material layer 2 according to the through hole pattern to obtain a through hole 3 having a predetermined depth;

Step S5, performing photolithography on the dielectric material layer 2 to form a trench pattern thereon for realizing interconnect lines in the horizontal direction;

Step S6, etching the dielectric material layer 2 according to the trench pattern to obtain the trench 4 having the depth required for the process, and continuing to etch the via hole 3 according to the via pattern to achieve the desired process. depth;

Step S7, depositing a barrier layer 5 and a copper seed layer 6 sequentially on the upper surface of the substrate by sputtering deposition to sequentially deposit on the upper surface of the substrate and the through

holes

3 and 4 in the substrate a barrier layer 5 and a copper seed layer 6, wherein the barrier layer 5 serves to block diffusion of copper atoms to the dielectric material layer 2, and to enhance adhesion between the dielectric material layer 2 and the copper seed layer 6. The copper seed layer 6 is used as a conductive layer in a subsequent electroplating process;

Step S8, depositing a copper layer on the upper surface of the substrate by an electroplating process to form a copper layer on the upper surface of the substrate and the via holes 3 and the trenches 4 thereon;

In step S9, the copper layer on the upper surface of the substrate is planarized and cleaned by an annealing process and a chemical mechanical polishing process.

Wherein, depositing the copper seed layer in step S7 is one of the key steps of the copper interconnection process, as shown in FIG. 2, which specifically includes the following steps:

Step S71, a degassing process is performed to remove volatile gas impurities on the surface of the substrate by heating to ensure electrical properties of the subsequent copper layer;

Step S72, the pre-cleaning process uses plasma etching to remove non-volatile gas impurities on the surface of the substrate to ensure electrical properties of the subsequent copper layer;

Step S73, depositing a barrier layer 5 (for example, tantalum nitride or tantalum) on the upper surface of the substrate by magnetron sputtering to be in the upper surface of the substrate and the via holes 3 and the trenches 4 thereon Depositing a barrier layer 5;

In step S74, a copper seed layer 6 is deposited on the upper surface of the substrate to deposit a copper seed layer 6 on both the upper surface of the substrate and the

vias

3 and 4 thereon.

In step S74, a magnetron sputtering process is performed using a semiconductor processing apparatus to deposit a copper seed layer 6 on both the upper surface of the substrate and the via holes 3 and trenches 4 thereon. Specifically, as shown in FIG. 3, the semiconductor processing apparatus includes a reaction chamber 10, a copper target 11 is disposed at the top inside the reaction chamber 10, and a high ionization rate magnetron is disposed above the copper target 11. 12, for achieving high ionization of the target ions; a carrying device 13 for carrying the substrate is disposed in the reaction chamber 10 and below the copper target 11, and the carrying device 13 is electrically connected to the RF power source 14. The RF power source 14 is used to provide RF power to the carrier device 13 to increase the directivity of the target particles, so that the copper seed layer 6 can be well controlled in the top extension region of the holes (through holes 3 and 4) (overhang) And the coverage of the inner sidewalls to meet the requirements of the subsequent electroplating process, and the complete filling of the pores meets the process requirements.

However, the above-mentioned magnetron sputtering process can only satisfy the coverage of the large-sized pore inner sidewall of the technology node above 22 nm, and cannot control the coverage of the small-sized pore inner sidewall of the technology node below 22 nm. Since the coverage of the inner side wall of the small-sized pores cannot be controlled, the result of subsequent complete filling of the pores is difficult to meet the process requirements. Therefore, how to improve the coverage of the inner sidewall of the small-sized aperture is a technical problem to be solved by those skilled in the art.

Summary of the invention

The present invention is directed to solving the technical problems existing in the prior art, and provides a pore deposition process on a substrate and a semiconductor processing apparatus, which can improve the coverage of the inner sidewall of the small-sized pore, thereby improving the subsequent small size. The process quality of the pore filling process provides good conditions.

In order to solve the above technical problem, the present invention provides a pore deposition process on a substrate, wherein the metal particle migration process is performed at least once, and the metal particle migration process includes the following steps: Step S100, using a sputtering deposition method Forming a metal layer in the pores on the substrate; in step S200, heating the substrate forming the metal layer to a preset temperature such that metal particles of the metal layer gradually extend from the upper portion of the pore to the pore Bottom migration.

In the step S200, the preset temperature ranges from 200 to 300 °C.

Wherein, the process temperature used in the step S100 ranges from less than 60 °C.

Wherein the performing the metal particle migration process at least once comprises repeatedly performing the metal particle migration process until the interior of the pore is completely filled with the metal particles.

Wherein, after the performing the metal particle migration process at least once, a plating process filling process is further included, that is, a metal is deposited on the upper surface of the substrate by an electroplating process until the inside of the pores on the substrate is completely The metal particles are filled.

As another technical aspect, the present invention also provides a semiconductor processing apparatus including a reaction chamber, a heating chamber, and a transfer device, wherein the reaction chamber is used for sputtering deposition Forming a metal layer in the pores on the substrate; the heating chamber is configured to bring the substrate forming the metal layer to a preset temperature, so that the metal particles of the metal layer gradually move from the upper portion of the pore The bottom of the pore migrates; the transport means is for transporting the substrate between the reaction chamber and the heating chamber.

Wherein the heating chamber is disposed outside the sidewall of the reaction chamber and is in communication with the reaction chamber.

Wherein the transmission device includes a carrier arm and a rotary drive mechanism, wherein: the carrier arm is configured to carry the substrate; the rotary drive mechanism is configured to drive the carrier arm to rotate about a rotation axis thereof to drive the A substrate is transferred between the reaction chamber and the heating chamber.

Wherein the heating chamber is provided with heating means for heating the substrate to a preset temperature when the substrate is located in the heating chamber.

The preset temperature ranges from 200 to 300 °C.

Wherein, the heating device comprises an infrared heating bulb, an electric resistance wire or an induction coil.

The invention has the following beneficial effects:

In the pore deposition process on the substrate provided by the present invention, the metal particle migration process is performed at least once, and the metal particle migration process includes the following steps S100 and S200, and the lining is performed by sputtering deposition in step S100. Forming a metal layer in the pores on the bottom; in step S200, heating the substrate forming the metal layer to a preset temperature, so that the migration ability of the metal particles at the preset temperature is enhanced, thereby realizing the self-porosity of the metal particles. The upper part gradually migrates to the bottom of the pore. During the migration process, the metal particles at the epitaxial region at the top of the pore migrate downward to the inner side wall of the pore and the bottom of the pore, thereby increasing the coverage of the metal particles in the inner wall of the pore. Good conditions are provided for the subsequent pore filling process. Since the pore deposition process on the substrate provided by the present invention increases the coverage of the metal particles in the inner sidewall of the pore by the migration process of the metal particles, the method has no special requirement on the size of the pore, and is suitable for the technical node at 22 nm. The above large size pores are also suitable for technical nodes at 22nm The following small-sized pores are therefore suitable for a wide range of applications.

In one embodiment of the invention, the metal particle migration process is repeated until the pores are completely filled with metal particles. In this way, the coverage of the metal particles in the inner sidewall of the pore can be further improved, and the complete filling of the pore can be directly realized, thereby improving the efficiency and quality of the process.

In another embodiment of the present invention, after at least one metal particle migration process is performed, a plating process filling process needs to be performed, that is, a metal is deposited on the upper surface of the substrate by an electroplating process until the pores on the substrate are completely covered by the metal. Particle filling. In this way, by performing the metal particle migration process at least once, the coverage of the metal particles in the sidewalls of the pores can be improved, thereby providing a good process basis for the subsequent plating process filling process, avoiding defects in the plating process; and, filling by means of an electroplating process The process can completely fill the pores, thereby improving the quality of the process.

The semiconductor processing apparatus provided by the present invention comprises a reaction chamber, a heating chamber and a transport device capable of transporting a substrate between the reaction chamber and the heating chamber, and the heating chamber can be formed in the reaction chamber The substrate of the metal layer is heated to a preset temperature to enhance the migration ability of the metal particles of the metal layer at the predetermined high temperature, thereby realizing migration of the metal particles from the upper portion of the pore to the bottom of the pore, and during the migration The metal particles at the epitaxial region at the top of the pore migrate downward to the inner side wall of the pore and the bottom of the pore, thereby increasing the coverage of the metal particles in the inner side wall of the pore, and providing favorable conditions for the subsequent pore filling process. And improve the quality of the process. Further, since the semiconductor processing apparatus provided by the present invention increases the coverage of the metal particles in the sidewalls of the pores by the migration process of the metal particles, there is no particular requirement for the size of the pores, and the scope of application is wide.

DRAWINGS

1 is a schematic flow chart of a prior art dual embedded process;

2 is a schematic flow chart of step S7 in FIG. 1;

3 is a schematic view showing the structure of a reaction chamber of a conventional magnetron sputtering apparatus.

4 is a view showing a form of pores in a step S100 of a pore deposition process on a substrate provided by an embodiment of the present invention;

Figure 5 is a morphological change process diagram of the aperture shown in Figure 4 in step S200 of the embodiment of the present invention;

FIG. 6 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention;

Figure 7 is a transmission trace diagram of the substrate between the reaction chamber and the heating chamber.

detailed description

The essence of the invention is to provide a pore deposition process on a substrate and a corresponding semiconductor processing apparatus, wherein the migration of the metal particles at the preset temperature by heating the substrate forming the metal layer to a preset temperature The ability is enhanced to realize the migration of the metal particles from the upper portion of the pore to the bottom of the pore, and during the migration, the metal particles at the epitaxial region at the top of the pore migrate downward to the inner side wall of the pore and the bottom of the pore, thereby improving The coverage of the metal particles in the inner sidewall of the pore provides good conditions for the subsequent filling process of the pore. Further, since the coverage of the metal particles in the inner wall of the pore is improved by the migration process of the metal particles in the present invention, there is no particular requirement for the size of the pores, and the scope of application is wide.

In order to enable those skilled in the art to better understand the technical solutions of the present invention, the pore deposition process and the semiconductor processing apparatus on the substrate provided by the present invention are described in detail below with reference to the accompanying drawings.

4 is a view showing the morphology of pores in step S100 of the pore deposition process on the substrate provided by the embodiment of the present invention. Figure 5 is a diagram showing the morphological change process of the aperture shown in Figure 4 in step S200 of the embodiment of the present invention. Referring to FIG. 4 and FIG. 5, in the pore deposition process on the substrate provided in this embodiment, the metal particle migration process is performed at least once, and the metal particle migration process includes the following steps:

Step S100, forming a metal layer in the pores on the substrate by sputtering deposition; wherein the metal comprises copper or aluminum;

In step S200, the substrate on which the metal layer is formed is heated to a preset temperature so that the metal particles of the metal layer gradually migrate from the upper portion of the pore to the bottom portion 3 of the pore. Wherein the upper portion of the aperture comprises an epitaxial region 2 at the top of the aperture and an inner sidewall 1 above the bottom 3 of the aperture.

The specific working process of depositing metallic copper inside the pores by using the pore deposition process on the substrate provided by the embodiment is described in detail below with reference to FIG. 4 and FIG.

First, the metal particle migration process including step S100 and step S200 is performed.

Specifically, in step S100, since the size of the pores is small, the copper particles whose moving direction faces the inner side wall 1 of the pores do not easily enter the pores, thereby causing the copper layer deposited on the inner side wall 1 of the pores to be thin, and The metal layer deposited on the epitaxial region 2 and the pore bottom 3 at the top of the pore is relatively thick, as shown in FIG. 4; in addition, the coverage of the epitaxial region 2 and the inner sidewall 1 at the top of the pore is not well controlled, that is, In a portion of the epitaxial region 2 at the top of the pore which is desired to deposit or not deposit a metal layer, an excessive metal layer is deposited, and a portion of the inner sidewall 1 of the pore which is desired to deposit the metal layer is not deposited with metal. Floor.

Next, in step S200, the substrate having the pores of the morphology shown in FIG. 4 is heated to a preset temperature. Specifically, the preset temperature ranges from 200 to 300 ° C, which makes the vacuum and the temperature Under the condition of temperature chamber, the migration ability of copper particles in the copper layer is enhanced, and gradually migrates from the upper part of the pore to the bottom 3 of the pore under the action of its atomic mass. FIG. 5 shows the pores shown in FIG. The morphological change process in step S200 of the pore deposition process on the substrate provided by the embodiment of the invention: wherein, in the phase I, the copper layer deposited on the inner sidewall 1 of the pore is thin, and the epitaxial region 2 and the bottom of the pore at the top of the pore 3 The deposited metal layer is relatively thick; in stage II, the copper particles migrate from the upper part of the pore to the bottom 3 of the pore. During the migration, the metal particles of the epitaxial region 2 at the top of the pore migrate downward to the inner side wall of the pore 1 And at the bottom 3 of the pores, part of the metal particles on the inner side wall 1 of the pores also migrate toward the bottom 3 of the pores, so that the copper layer deposited on the upper portion of the pores becomes thinner, and the metal layer deposited on the bottom portion 3 of the pores becomes thicker; stage In the crucible, the copper particles continue to migrate from the upper part of the pore to the bottom 3 of the pore, the copper layer deposited on the upper part of the pore continues to be thinned, and the metal layer deposited on the bottom 3 of the pore Further thicker. In practical applications, the range of the preset temperature is specifically set according to the metal material to be deposited in the process, as long as the migration ability of the metal particles can be enhanced under the preset temperature condition.

Then, the metal particle migration process is repeatedly performed, that is, the above steps S100 and S200 are repeatedly performed, and the copper particles are repeatedly repetitively moved from the upper portion of the pores to the bottom portion 3 of the pores, so that the thickness of the copper particles deposited at the bottom 3 of the pores is increased. The thicker it is. The above steps S100 and S200 are repeated until the inside of the pores is completely filled with metal particles (copper particles), thereby achieving complete filling of the inside of the pores by the metal particles. In this way, by repeating the metal particle migration process, the inside of the pores is completely filled with the metal particles, which not only can further improve the coverage of the metal particles of the inner side wall 1 of the pores, but also can directly achieve the complete filling of the pores without The technology further increases the plating process to achieve complete filling of the pores, thereby improving process efficiency and improving process quality.

In practical applications, the metal copper may be deposited into the pores by the pore deposition process on the substrate provided by the embodiment to realize the copper interconnect. Moreover, to implement the copper interconnect, the following steps are also included before step S100:

Step S101, depositing a silicon nitride film on the upper surface of the substrate for stopping the etching of the subsequently deposited dielectric material layer;

Step S102, depositing a low dielectric constant dielectric material layer having a certain thickness on the surface of the silicon nitride film;

Step S103, etching a void on the dielectric material layer, wherein the void includes a trench for realizing an interconnect line in a horizontal direction and a via hole for realizing an interconnect line in a vertical direction.

In a practical application, after performing the metal particle migration process at least once and completely filling the inside of the pores with the metal particles, the step S310 may be further included, and the copper layer on the surface of the substrate is planarized and cleaned by an annealing process and a chemical mechanical polishing process. .

It should be noted that although the foregoing embodiment achieves complete filling of the pores by the metal particles by repeatedly performing the metal particle migration process, the present invention is not limited thereto, and is actually In the application, after the metal particle migration process is performed at least once, the electroplating process filling process is further included, that is, the copper metal is deposited on the upper surface of the substrate by an electroplating process until the inside of the pores on the substrate is surrounded by metal particles (for example, copper particles). ) completely filled. In this way, by performing the metal particle migration process at least once, the coverage of the metal particles on the inner sidewall of the pore can be improved, thereby providing a good process basis for the subsequent plating process filling process, avoiding defects in the plating process; and, by means of the electroplating process The filling process allows the pores to be completely filled, thereby improving the quality of the process. It can be understood that in order to meet the requirements of the electroplating process, the above metal particle migration process can be repeated a certain number of times to ensure that the coverage of the epitaxial region 2 and the inner sidewall 1 at the top of the pore meets the plating requirements.

It should be noted that a copper target is disposed at the top of the chamber in which the step S100 is completed, and a high ionization rate magnetron is disposed above the copper target to achieve high ionization of the target ions, and The copper target is electrically connected to the direct current power source for exciting the process gas in the chamber to form a plasma and applying a negative bias to the copper target to attract the plasma to bombard the copper target, which causes the surface of the copper target to be bombarded and escaped. The copper particles are deposited on the surface of the substrate to form a copper layer, and the output power of the DC power source is about 3 kW; in the chamber, under the copper target, a carrying device for carrying the substrate substrate is disposed, and the carrying device is The RF power source is electrically connected, and the RF power source is used to provide RF power to the carrying device to increase the directivity of the target particles. The output power of the RF power source is about 400 W; in addition, the air pressure of the chamber is about 0 mTorr; the process used in step S100 The temperature range is less than 60 °C.

It should be further noted that, in this embodiment, a specific working process of depositing metallic copper in the pores by using the pore deposition process on the substrate provided in the embodiment is specifically described. However, the present invention is not limited thereto. In practical applications, the pore deposition process on the substrate provided in this embodiment may also be used to deposit other metals in the pores, and the working process is similar to the above process of depositing metallic copper, but It is necessary to specifically set specific parameters in the deposition process according to different metal materials, for example, setting the magnetron sputtering method in step S100 and the preset temperature in step S200.

In summary, the pore deposition process on the substrate provided by the embodiment of the present invention forms a metal layer in the void in step S100, and heats the substrate forming the metal layer to a preset temperature in step S200, which causes the metal Under the condition of preset temperature, the migration ability of the particles is enhanced, so that the metal particles gradually migrate from the upper part of the pores to the bottom of the pores, thereby increasing the coverage of the metal particles on the inner side wall of the pores, and providing the filling process for the subsequent pores. Good condition. In the pore deposition process on the substrate provided by the embodiment of the present invention, the coverage of the metal particles in the inner sidewall of the pore is improved by the migration process of the metal particles, so the method has no special requirement on the size of the pore, and has a wide application range, for example, It is suitable for large-sized pores with technology nodes above 22nm, and for small-sized pores with technology nodes below 22nm.

As another technical solution, the present invention also provides a semiconductor processing apparatus. FIG. 6 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention. Figure 7 is a transmission trace diagram of the substrate between the reaction chamber and the heating chamber. Referring to FIG. 6 and FIG. 7 together, the semiconductor processing apparatus provided in this embodiment includes a reaction chamber 20, a heating chamber 21, and a transmission device 22. Wherein, the reaction chamber 20 is used to form a metal layer in the pores on the substrate by sputtering deposition, the metal includes copper or aluminum, etc.; the transport device 22 is used to transfer between the reaction chamber 20 and the heating chamber 21. a substrate; the heating chamber 21 is for heating the substrate to a preset temperature such that the metal particles of the metal layer gradually migrate from the upper portion of the pore to the bottom of the pore. By the migration of the metal particles, the metal particles in the epitaxial region at the top of the pore migrate downward to the inner side wall of the pore and the bottom of the pore, thereby increasing the coverage of the metal particles on the inner side wall of the pore, and providing a subsequent filling process for the pore. Good conditions, thereby improving the quality of the process. Further, since the semiconductor processing apparatus provided by the embodiment of the present invention increases the coverage of the metal particles of the inner sidewall of the pore by the migration process of the metal particles, there is no special requirement for the size of the pore, and the scope of application is wide, for example, applicable to The large-sized pores of the technology node above 22 nm are suitable for small-sized pores with technology nodes below 22 nm.

Specifically, in the present embodiment, as shown in FIG. 6, the top of the reaction chamber 20 is provided with a metal target 201, and a high ionization rate magnetron 202 is disposed above the metal target 201. To achieve high ionization of the target ions, and the metal target 201 is electrically connected to the direct current power source for exciting the process gas in the reaction chamber 20 to form a plasma and loading the metal target 201 with a negative bias to attract The plasma bombards the metal target, which causes metal particles escaping from the surface of the metal target 201 to be deposited on the surface of the substrate to form a metal layer; in the reaction chamber 20, and under the metal target 201, useful The substrate carrying device 203 is electrically connected to the RF power source 204. The RF power source 204 is used to provide RF power to the carrier device 203 to increase the directivity of the target particles. In order to realize the formation of a copper layer in the pores on the substrate in the reaction chamber 20, the metal target is a copper target, the output power of the radio frequency power source 204 is about 400 W; the pressure of the reaction chamber 20 is about 0 mTorr; the reaction chamber 20 The temperature range is less than 60 ° C; the output power of the DC power supply is about 3 kW.

Further, the heating chamber 21 is disposed outside the side wall of the reaction chamber 20 and communicates with the reaction chamber 20; in addition, a heating device 211 is disposed in the heating chamber 21 for the substrate to be located in the heating chamber 21 When inside, the substrate is heated to a preset temperature. When the metal is copper, the preset temperature ranges from 200 to 300 °C. Preferably, the heating device 211 includes an infrared heating bulb that is heated by infrared heating, and the infrared heating bulb is disposed on the top wall of the heating chamber 21. In practical applications, the heating device 211 can also adopt other heating methods, such as an electric resistance wire, an induction coil, and the like.

The transport device 22 includes a carrier arm 221 and a rotary drive mechanism 222, wherein the carrier arm 221 is used to carry the substrate; the rotary drive mechanism 222 is configured to drive the carrier arm 221 to rotate about its rotation axis 2221 to drive the substrate in the reaction chamber 20 and The heating chamber 21 is transferred between the two. Specifically, in order to realize the transmission device 22 to transfer the substrate between the reaction chamber 20 and the heating chamber 21, a thimble lifting mechanism 205 is further disposed in the reaction chamber 20, and the ejector lifting mechanism 205 is disposed on the carrying device 203. Below, and can be raised and lowered through the carrying device 203 to jack up or lower the substrate located on the upper surface of the carrying device 203.

How the ejector lift mechanism 205 and the transport device 22 cooperate to effect substrate transfer will be described in detail below in conjunction with FIG. Specifically, the process position A is defined as the upper surface of the carrier base 203. a position for carrying the substrate; a process position B is a predetermined position in the heating chamber 21 for heating the substrate; and a process position for transferring the substrate from the process position A of the reaction chamber 20 to the heating chamber 21 The working process of B is: the ejector lifting mechanism 205 is raised to lift the substrate, and the substrate is vertically higher than the process position B; the rotary driving mechanism 222 drives the carrying arm 221 to rotate around the rotating shaft 2221, and is rotated to The reaction chamber 20 is located directly under the substrate; the ejector lifting mechanism 205 is lowered to place the substrate on the carrying arm 221; the rotary driving mechanism 222 drives the carrying arm 221 to rotate in the opposite direction around the rotating shaft 2221 to the heating chamber 21. Process position B. Since the operation of the process position A from the process position B of the heating chamber 21 to the process chamber A of the reaction chamber 20 is similar to the above process, the operation sequence is reversed and will not be described herein.

Therefore, by the use of the ejector lift mechanism 205 and the transport device 22, the substrate can be moved along the motion trajectory S as shown in FIG. 7, moving from the position A of the reaction chamber 20 to the position B of the heating chamber 21, or The position B from the heating chamber 21 is moved to the position A of the reaction chamber 20. In practical applications, the transfer device 22 can be used to transfer the substrate between the reaction chamber 20 and the heating chamber, which is not limited herein.

Further, when the transfer device 22 reciprocally transports the substrate between the reaction chamber 20 and the heating chamber, the deposition process in the reaction chamber 20 and the heating process of the heating chamber can be repeatedly performed, so that the metal particles can be repeatedly executed. Migrate until the pores are completely filled with metal particles. In this way, the coverage of the metal particles in the inner sidewall of the pore can be further improved, and the complete filling of the pore can be directly realized, thereby improving the efficiency and quality of the process.

It should be noted that the semiconductor processing apparatus provided in this embodiment is used to complete the pore deposition process on the substrate, and the working process is similar to the pore deposition process on the substrate provided in the above embodiments, and details are not described herein again.

It should be noted that, in this embodiment, the heating chamber 21 is in communication with the reaction chamber 20. In practical applications, in order to prevent the environment of the two chambers from interacting with each other, a gate valve may be disposed between the two. The communication or disconnection of the heating chamber 21 and the reaction chamber 20 is achieved by controlling the opening and closing of the gate valve.

In addition, in practical applications, specific parameters of the semiconductor processing equipment may be set according to different metal materials, for example, parameters such as temperature, air pressure, DC power output power, and RF power output power in the reaction chamber 20, and Heating the heating power of the heating device 211 in the chamber 21, the preset temperature required for heating of the substrate, and the like.

It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

Claims

A pore deposition process on a substrate, characterized in that the metal particle migration process is performed at least once, and the metal particle migration process comprises the following steps:

Step S100, forming a metal layer in the pores on the substrate by sputtering deposition;

In step S200, the substrate forming the metal layer is heated to a preset temperature such that metal particles of the metal layer gradually migrate from the upper portion of the pore to the bottom of the pore.
The pore deposition process on a substrate according to claim 1, wherein in the step S200, the preset temperature ranges from 200 to 300 °C.
The pore deposition process on a substrate according to claim 1, wherein the process temperature used in the step S100 ranges from less than 60 °C.
The pore deposition process on a substrate according to any one of claims 1 to 3, wherein the performing the metal particle migration process at least once comprises repeatedly performing a metal particle migration process until the inside of the pore is completely The metal particles are filled.
The pore deposition process on a substrate according to any one of claims 1 to 3, further comprising an electroplating process filling process after the performing the metal particle migration process at least once, that is, using an electroplating process Metal is deposited on the upper surface of the substrate until the interior of the pores on the substrate is completely filled with the metal particles.
A semiconductor processing apparatus, comprising: a reaction chamber, a heating chamber, and a transmission device, wherein

The reaction chamber is used to form a metal layer in the pores on the substrate by sputtering deposition;

The heating chamber is configured to bring the substrate forming the metal layer to a preset temperature to cause the gold Metal particles of the genus layer gradually migrate from the upper portion of the pore to the bottom of the pore;

The transport device is for transporting the substrate between the reaction chamber and the heating chamber.
The semiconductor processing apparatus according to claim 6, wherein said heating chamber is disposed outside a side wall of said reaction chamber and is in communication with said reaction chamber.
The semiconductor processing apparatus according to claim 6, wherein said transfer means comprises a carrier arm and a rotary drive mechanism, wherein

The carrying arm is configured to carry the substrate;

The rotary drive mechanism is configured to drive the carrier arm to rotate about its axis of rotation to drive the substrate to be transferred between the reaction chamber and the heating chamber.
A semiconductor processing apparatus according to claim 6, wherein a heating means is provided in said heating chamber for heating said substrate to a preset when said substrate is located in said heating chamber temperature.
The semiconductor processing apparatus according to claim 6, wherein said preset temperature has a value ranging from 200 to 300 °C.
The semiconductor processing apparatus according to claim 9, wherein said heating means comprises an infrared heating bulb, an electric resistance wire or an induction coil.