SG11201607490RA - Via deposition process on substrate and semiconductor processing apparatus - Google Patents
Via deposition process on substrate and semiconductor processing apparatusInfo
- Publication number
- SG11201607490RA SG11201607490RA SG11201607490RA SG11201607490RA SG11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- processing apparatus
- deposition process
- semiconductor processing
- via deposition
- Prior art date
Links
- 238000005137 deposition process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410150706.6A CN105088151A (en) | 2014-04-15 | 2014-04-15 | Pore deposition process on substrate, and semiconductor processing equipment |
PCT/CN2014/094380 WO2015158152A1 (en) | 2014-04-15 | 2014-12-19 | Pore deposition process on substrate and semiconductor processing device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201607490RA true SG11201607490RA (en) | 2016-10-28 |
Family
ID=54323461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607490RA SG11201607490RA (en) | 2014-04-15 | 2014-12-19 | Via deposition process on substrate and semiconductor processing apparatus |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR20160138296A (en) |
CN (1) | CN105088151A (en) |
SG (1) | SG11201607490RA (en) |
WO (1) | WO2015158152A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113921456A (en) * | 2021-09-30 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and wafer processing method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105441B2 (en) * | 1992-11-30 | 1995-11-13 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US5639357A (en) * | 1994-05-12 | 1997-06-17 | Applied Materials | Synchronous modulation bias sputter method and apparatus for complete planarization of metal films |
JPH1098041A (en) * | 1996-09-25 | 1998-04-14 | Denso Corp | Manufacture of semiconductor device |
US6387805B2 (en) * | 1997-05-08 | 2002-05-14 | Applied Materials, Inc. | Copper alloy seed layer for copper metallization |
JP2002075895A (en) * | 2000-08-25 | 2002-03-15 | Anelva Corp | Reflow spattering system |
CN1697137A (en) * | 2004-05-12 | 2005-11-16 | 上海先进半导体制造有限公司 | Method for depositing aluminum to fill in hole in sub micron size applied to semiconductor technology |
KR101433899B1 (en) * | 2008-04-03 | 2014-08-29 | 삼성전자주식회사 | Method for forming metallic layer on portion etched of substrate, the substrate having the metallic layer formed using the same and a structure formed using the same |
JP4761326B2 (en) * | 2010-01-15 | 2011-08-31 | シャープ株式会社 | Thin film forming apparatus system and thin film forming method |
US8841211B2 (en) * | 2010-06-09 | 2014-09-23 | Applied Materials, Inc. | Methods for forming interconnect structures |
CN102560388A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetic control sputtering equipment |
CN103094156B (en) * | 2011-11-03 | 2016-02-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate processing equipment and chamber device thereof and substrate heating method |
JP6150438B2 (en) * | 2014-06-20 | 2017-06-21 | 京セラドキュメントソリューションズ株式会社 | Optical scanning device and image forming apparatus having the same |
-
2014
- 2014-04-15 CN CN201410150706.6A patent/CN105088151A/en active Pending
- 2014-12-19 WO PCT/CN2014/094380 patent/WO2015158152A1/en active Application Filing
- 2014-12-19 KR KR1020167030766A patent/KR20160138296A/en not_active Application Discontinuation
- 2014-12-19 SG SG11201607490RA patent/SG11201607490RA/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20160138296A (en) | 2016-12-02 |
WO2015158152A1 (en) | 2015-10-22 |
CN105088151A (en) | 2015-11-25 |
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