SG11201607490RA - Via deposition process on substrate and semiconductor processing apparatus - Google Patents

Via deposition process on substrate and semiconductor processing apparatus

Info

Publication number
SG11201607490RA
SG11201607490RA SG11201607490RA SG11201607490RA SG11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA SG 11201607490R A SG11201607490R A SG 11201607490RA
Authority
SG
Singapore
Prior art keywords
substrate
processing apparatus
deposition process
semiconductor processing
via deposition
Prior art date
Application number
SG11201607490RA
Inventor
Guodong Bian
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG11201607490RA publication Critical patent/SG11201607490RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441Deposition of conductive or insulating materials for electrodes
    • H01L21/443Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG11201607490RA 2014-04-15 2014-12-19 Via deposition process on substrate and semiconductor processing apparatus SG11201607490RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410150706.6A CN105088151A (en) 2014-04-15 2014-04-15 Pore deposition process on substrate, and semiconductor processing equipment
PCT/CN2014/094380 WO2015158152A1 (en) 2014-04-15 2014-12-19 Pore deposition process on substrate and semiconductor processing device

Publications (1)

Publication Number Publication Date
SG11201607490RA true SG11201607490RA (en) 2016-10-28

Family

ID=54323461

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201607490RA SG11201607490RA (en) 2014-04-15 2014-12-19 Via deposition process on substrate and semiconductor processing apparatus

Country Status (4)

Country Link
KR (1) KR20160138296A (en)
CN (1) CN105088151A (en)
SG (1) SG11201607490RA (en)
WO (1) WO2015158152A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113921456A (en) * 2021-09-30 2022-01-11 北京北方华创微电子装备有限公司 Semiconductor processing equipment and wafer processing method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105441B2 (en) * 1992-11-30 1995-11-13 日本電気株式会社 Method for manufacturing semiconductor device
US5639357A (en) * 1994-05-12 1997-06-17 Applied Materials Synchronous modulation bias sputter method and apparatus for complete planarization of metal films
JPH1098041A (en) * 1996-09-25 1998-04-14 Denso Corp Manufacture of semiconductor device
US6387805B2 (en) * 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
JP2002075895A (en) * 2000-08-25 2002-03-15 Anelva Corp Reflow spattering system
CN1697137A (en) * 2004-05-12 2005-11-16 上海先进半导体制造有限公司 Method for depositing aluminum to fill in hole in sub micron size applied to semiconductor technology
KR101433899B1 (en) * 2008-04-03 2014-08-29 삼성전자주식회사 Method for forming metallic layer on portion etched of substrate, the substrate having the metallic layer formed using the same and a structure formed using the same
JP4761326B2 (en) * 2010-01-15 2011-08-31 シャープ株式会社 Thin film forming apparatus system and thin film forming method
US8841211B2 (en) * 2010-06-09 2014-09-23 Applied Materials, Inc. Methods for forming interconnect structures
CN102560388A (en) * 2010-12-09 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 Magnetic control sputtering equipment
CN103094156B (en) * 2011-11-03 2016-02-10 北京北方微电子基地设备工艺研究中心有限责任公司 Substrate processing equipment and chamber device thereof and substrate heating method
JP6150438B2 (en) * 2014-06-20 2017-06-21 京セラドキュメントソリューションズ株式会社 Optical scanning device and image forming apparatus having the same

Also Published As

Publication number Publication date
KR20160138296A (en) 2016-12-02
WO2015158152A1 (en) 2015-10-22
CN105088151A (en) 2015-11-25

Similar Documents

Publication Publication Date Title
EP3391406A4 (en) Methods and apparatus for processing a substrate
SG10201705081PA (en) Substrate processing apparatus
HK1245417B (en) Substrate processing method and substrate-processing apparatus
SG10201604456TA (en) Substrate processing apparatus and substrate processing method
SG10201601095UA (en) Substrate cleaning apparatus, substrate cleaning method, and substrate processing apparatus
SG10201508119XA (en) Substrate processing apparatus and processing method
SG11201704323XA (en) Wafer processing device and method therefor
SG11201702331YA (en) Substrate processing device, manufacturing method for semiconductor device, and reaction tube
SG10201509657RA (en) Wafer processing method
SG10201505185XA (en) Wafer processing method
SG10201504351YA (en) Wafer processing method
SG10201700915XA (en) Wafer processing method
SG10201508278VA (en) Wafer processing method
SG11201607004QA (en) Substrate processing system and substrate processing method
SG10201701086SA (en) Wafer processing method
SG10201506731PA (en) Buffing apparatus, and substrate processing apparatus
SG10201506936WA (en) Wafer processing method
SG10201505459WA (en) Wafer processing method
SG10201502813TA (en) Substrate Processing Apparatus
SG10201503911VA (en) Wafer processing method
SG10201504089SA (en) Wafer processing method
SG10201705501WA (en) Substrate processing apparatus
SG10201700072UA (en) Wafer processing method
KR102039240B9 (en) Substrate processing apparatus
SG10201703264YA (en) Wafer processing method