SG10201703264YA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201703264YA
SG10201703264YA SG10201703264YA SG10201703264YA SG10201703264YA SG 10201703264Y A SG10201703264Y A SG 10201703264YA SG 10201703264Y A SG10201703264Y A SG 10201703264YA SG 10201703264Y A SG10201703264Y A SG 10201703264YA SG 10201703264Y A SG10201703264Y A SG 10201703264YA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10201703264YA
Inventor
Sekiya Kazuma
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201703264YA publication Critical patent/SG10201703264YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10201703264YA 2016-05-11 2017-04-20 Wafer processing method SG10201703264YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016095248A JP6671794B2 (en) 2016-05-11 2016-05-11 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10201703264YA true SG10201703264YA (en) 2017-12-28

Family

ID=60163687

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201703264YA SG10201703264YA (en) 2016-05-11 2017-04-20 Wafer processing method

Country Status (7)

Country Link
US (1) US10109528B2 (en)
JP (1) JP6671794B2 (en)
KR (1) KR102250216B1 (en)
CN (1) CN107452609B (en)
DE (1) DE102017207794A1 (en)
SG (1) SG10201703264YA (en)
TW (1) TWI757277B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6887722B2 (en) * 2016-10-25 2021-06-16 株式会社ディスコ Wafer processing method and cutting equipment
KR102563929B1 (en) * 2018-03-09 2023-08-04 삼성전자주식회사 Method of singulating semiconductor die and method of fabricating semiconductor package
JP7154687B2 (en) * 2018-06-19 2022-10-18 株式会社ディスコ tape expansion unit
TWI678748B (en) * 2018-10-18 2019-12-01 大陸商蘇州工業園區雨竹半導體有限公司 Method for separating test sample from wafer substrate
JP7221649B2 (en) * 2018-10-30 2023-02-14 株式会社ディスコ Wafer expansion method and wafer expansion device
JP7199786B2 (en) * 2018-11-06 2023-01-06 株式会社ディスコ Wafer processing method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352073B1 (en) * 1998-11-12 2002-03-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing equipment
JP4488590B2 (en) * 1999-07-28 2010-06-23 株式会社ディスコ Workpiece division method
JP2003017457A (en) * 2001-07-03 2003-01-17 Dainippon Screen Mfg Co Ltd Method and apparatus for cleaning substrate
JP4402973B2 (en) * 2004-02-09 2010-01-20 株式会社ディスコ Wafer division method
JP4733934B2 (en) * 2004-06-22 2011-07-27 株式会社ディスコ Wafer processing method
JP2007067278A (en) * 2005-09-01 2007-03-15 Tokyo Seimitsu Co Ltd Expanding method and expanding apparatus
EP2122670A4 (en) * 2006-08-07 2013-05-15 Semi Photonics Co Ltd Method of separating semiconductor dies
JP2009272503A (en) * 2008-05-09 2009-11-19 Disco Abrasive Syst Ltd Breaking device and breaking method for filmy adhesive
JP5939451B2 (en) * 2011-02-18 2016-06-22 株式会社東京精密 Work dividing apparatus and work dividing method
KR101271259B1 (en) * 2011-06-01 2013-06-07 도광회 apparatus for removing particles on a wafer
JP6047353B2 (en) * 2012-09-20 2016-12-21 株式会社ディスコ Processing method
JP5977633B2 (en) * 2012-09-20 2016-08-24 株式会社ディスコ Processing method
JP6173059B2 (en) * 2013-06-17 2017-08-02 株式会社ディスコ Wafer splitting device
JP6178724B2 (en) * 2013-12-26 2017-08-09 株式会社ディスコ Wafer dividing method
JP2015222756A (en) * 2014-05-22 2015-12-10 株式会社ディスコ Method of processing wafer and parting device
JP6425435B2 (en) * 2014-07-01 2018-11-21 株式会社ディスコ Tip spacing maintenance device

Also Published As

Publication number Publication date
TWI757277B (en) 2022-03-11
KR20170127370A (en) 2017-11-21
US20170330799A1 (en) 2017-11-16
CN107452609B (en) 2023-04-25
US10109528B2 (en) 2018-10-23
KR102250216B1 (en) 2021-05-07
CN107452609A (en) 2017-12-08
JP2017204557A (en) 2017-11-16
JP6671794B2 (en) 2020-03-25
TW201742131A (en) 2017-12-01
DE102017207794A1 (en) 2017-11-16

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