SG10201603205TA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201603205TA
SG10201603205TA SG10201603205TA SG10201603205TA SG10201603205TA SG 10201603205T A SG10201603205T A SG 10201603205TA SG 10201603205T A SG10201603205T A SG 10201603205TA SG 10201603205T A SG10201603205T A SG 10201603205TA SG 10201603205T A SG10201603205T A SG 10201603205TA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10201603205TA
Inventor
Ogawa Yuki
Nagaoka Kensuke
Obata Tsubasa
Ban Yuri
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201603205TA publication Critical patent/SG10201603205TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10201603205TA 2015-05-19 2016-04-22 Wafer processing method SG10201603205TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015101599A JP6478801B2 (en) 2015-05-19 2015-05-19 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10201603205TA true SG10201603205TA (en) 2016-12-29

Family

ID=57231806

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201603205TA SG10201603205TA (en) 2015-05-19 2016-04-22 Wafer processing method

Country Status (7)

Country Link
US (1) US9716039B2 (en)
JP (1) JP6478801B2 (en)
KR (1) KR102447146B1 (en)
CN (1) CN106169442A (en)
DE (1) DE102016208307A1 (en)
SG (1) SG10201603205TA (en)
TW (1) TWI679693B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7032050B2 (en) * 2017-03-14 2022-03-08 株式会社ディスコ Laser processing equipment
JP6824582B2 (en) * 2017-04-04 2021-02-03 株式会社ディスコ Processing method
JP6912267B2 (en) * 2017-05-09 2021-08-04 株式会社ディスコ Laser processing method
JP6858455B2 (en) * 2017-07-24 2021-04-14 株式会社ディスコ Chip manufacturing method
JP6830739B2 (en) * 2017-08-22 2021-02-17 株式会社ディスコ How to make chips
JP7015139B2 (en) * 2017-10-18 2022-02-02 株式会社ディスコ Grinding method and grinding equipment for workpieces
JP6955975B2 (en) * 2017-11-21 2021-10-27 株式会社ディスコ Wafer processing method
JP7062449B2 (en) * 2018-01-23 2022-05-06 株式会社ディスコ How to cut the workpiece
JP7013276B2 (en) * 2018-02-23 2022-01-31 株式会社ディスコ Processing equipment
JP7068028B2 (en) * 2018-05-09 2022-05-16 株式会社ディスコ Wafer division method
JP7061021B2 (en) * 2018-06-06 2022-04-27 株式会社ディスコ Wafer processing method and grinding equipment
JP7191563B2 (en) * 2018-07-03 2022-12-19 株式会社ディスコ Wafer processing method
JP2020017677A (en) * 2018-07-26 2020-01-30 株式会社ディスコ Wafer processing method
CN109176928A (en) * 2018-09-14 2019-01-11 苏州迈为科技股份有限公司 A kind of cell piece dicing device and dicing method
DE102019201438B4 (en) * 2019-02-05 2024-05-02 Disco Corporation Method for producing a substrate and system for producing a substrate
JP7323304B2 (en) * 2019-03-07 2023-08-08 株式会社ディスコ Workpiece division method
US11289378B2 (en) * 2019-06-13 2022-03-29 Wolfspeed, Inc. Methods for dicing semiconductor wafers and semiconductor devices made by the methods
US20210202318A1 (en) * 2019-12-27 2021-07-01 Micron Technology, Inc. Methods of forming semiconductor dies with perimeter profiles for stacked die packages
US11901232B2 (en) * 2020-06-22 2024-02-13 Applied Materials, Inc. Automatic kerf offset mapping and correction system for laser dicing

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336988A (en) * 1986-07-29 1988-02-17 Rohm Co Ltd Dividing method for semiconductor wafer
JPH06224298A (en) * 1993-01-26 1994-08-12 Sony Corp Dicing method
JP2005064231A (en) 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd Dividing method of plate-shaped article
US7129114B2 (en) * 2004-03-10 2006-10-31 Micron Technology, Inc. Methods relating to singulating semiconductor wafers and wafer scale assemblies
JP2006073690A (en) * 2004-09-01 2006-03-16 Disco Abrasive Syst Ltd Dividing method of wafer
JP2006140341A (en) * 2004-11-12 2006-06-01 Disco Abrasive Syst Ltd Dividing method of wafer
JP4734903B2 (en) 2004-11-29 2011-07-27 株式会社デンソー Semiconductor wafer dicing method
JP4630689B2 (en) * 2005-03-01 2011-02-09 株式会社ディスコ Wafer division method
JP2008091779A (en) * 2006-10-04 2008-04-17 Sanyo Electric Co Ltd Method for manufacturing semiconductor device
JP5054496B2 (en) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 Processing object cutting method
JP2009272421A (en) * 2008-05-07 2009-11-19 Disco Abrasive Syst Ltd Method for manufacturing device
US8043940B2 (en) 2008-06-02 2011-10-25 Renesas Electronics Corporation Method for manufacturing semiconductor chip and semiconductor device
JP5122378B2 (en) * 2008-06-09 2013-01-16 株式会社ディスコ How to divide a plate
JP5964580B2 (en) * 2011-12-26 2016-08-03 株式会社ディスコ Wafer processing method
JP6078272B2 (en) 2012-09-10 2017-02-08 株式会社ディスコ Wafer processing method
JP6078376B2 (en) * 2013-02-22 2017-02-08 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
DE102016208307A1 (en) 2016-11-24
KR20160136232A (en) 2016-11-29
KR102447146B1 (en) 2022-09-23
CN106169442A (en) 2016-11-30
TWI679693B (en) 2019-12-11
TW201642336A (en) 2016-12-01
JP6478801B2 (en) 2019-03-06
US9716039B2 (en) 2017-07-25
US20160343614A1 (en) 2016-11-24
JP2016219564A (en) 2016-12-22

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