SG10201610659YA - Etching Method - Google Patents

Etching Method

Info

Publication number
SG10201610659YA
SG10201610659YA SG10201610659YA SG10201610659YA SG10201610659YA SG 10201610659Y A SG10201610659Y A SG 10201610659YA SG 10201610659Y A SG10201610659Y A SG 10201610659YA SG 10201610659Y A SG10201610659Y A SG 10201610659YA SG 10201610659Y A SG10201610659Y A SG 10201610659YA
Authority
SG
Singapore
Prior art keywords
etching method
etching
Prior art date
Application number
SG10201610659YA
Inventor
Takashima Ryuichi
GOHIRA Taku
Ooya Yoshinobu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201610659YA publication Critical patent/SG10201610659YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01009—Fluorine [F]
SG10201610659YA 2015-12-22 2016-12-20 Etching Method SG10201610659YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015250060A JP6385915B2 (en) 2015-12-22 2015-12-22 Etching method

Publications (1)

Publication Number Publication Date
SG10201610659YA true SG10201610659YA (en) 2017-07-28

Family

ID=59066628

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201610659YA SG10201610659YA (en) 2015-12-22 2016-12-20 Etching Method

Country Status (6)

Country Link
US (1) US10410877B2 (en)
JP (1) JP6385915B2 (en)
KR (1) KR102121640B1 (en)
CN (1) CN107039229B (en)
SG (1) SG10201610659YA (en)
TW (1) TWI743072B (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777442B2 (en) * 2016-11-18 2020-09-15 Applied Materials, Inc. Hybrid substrate carrier
JP6832171B2 (en) * 2017-01-24 2021-02-24 東京エレクトロン株式会社 Plasma processing method including cleaning of the inside of the chamber body of the plasma processing device
US10586710B2 (en) * 2017-09-01 2020-03-10 Tokyo Electron Limited Etching method
JP7181734B2 (en) * 2017-09-01 2022-12-01 東京エレクトロン株式会社 Etching method
US10811267B2 (en) 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
JP7239607B2 (en) * 2018-04-17 2023-03-14 アプライド マテリアルズ インコーポレイテッド Surface texturing without bead blasting
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US10770305B2 (en) * 2018-05-11 2020-09-08 Tokyo Electron Limited Method of atomic layer etching of oxide
JP2020068221A (en) * 2018-10-22 2020-04-30 東京エレクトロン株式会社 Etching method and plasma processing apparatus
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (en) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド Feedback loop for controlling pulsed voltage waveforms
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
KR20200100555A (en) * 2019-02-18 2020-08-26 도쿄엘렉트론가부시키가이샤 Etching method
JP7222940B2 (en) * 2019-02-18 2023-02-15 東京エレクトロン株式会社 Etching method and plasma processing apparatus
JP7190940B2 (en) * 2019-03-01 2022-12-16 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP7372073B2 (en) * 2019-08-02 2023-10-31 東京エレクトロン株式会社 Substrate processing method, substrate processing device and cleaning device
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
CN115185129B (en) * 2022-06-07 2024-02-09 深圳技术大学 Etching method of dielectric film via hole, liquid crystal display panel and liquid crystal display

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3044824B2 (en) * 1991-04-27 2000-05-22 ソニー株式会社 Dry etching apparatus and dry etching method
JP2789969B2 (en) * 1992-11-12 1998-08-27 住友金属工業株式会社 Method for forming contact hole in semiconductor device
JPH0722393A (en) * 1993-06-23 1995-01-24 Toshiba Corp Dry etching equipment and method
JPH0766280A (en) * 1993-08-30 1995-03-10 Toshiba Corp Manufacture of semiconductor device
JP2924596B2 (en) * 1993-09-27 1999-07-26 日立電線株式会社 Low temperature dry etching method and apparatus
JPH07273089A (en) * 1994-03-30 1995-10-20 Toshiba Corp Apparatus and method for plasma treatment
JPH09134907A (en) * 1995-11-07 1997-05-20 Hitachi Cable Ltd Dry etching method and apparatus using the same
TW486733B (en) * 1999-12-28 2002-05-11 Toshiba Corp Dry etching method and manufacturing method of semiconductor device for realizing high selective etching
US6890863B1 (en) * 2000-04-27 2005-05-10 Micron Technology, Inc. Etchant and method of use
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
KR100727834B1 (en) 2000-09-07 2007-06-14 다이킨 고교 가부시키가이샤 Dry etching gas and method for dry etching
US6869542B2 (en) * 2003-03-12 2005-03-22 International Business Machines Corporation Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials
KR20070009729A (en) * 2004-05-11 2007-01-18 어플라이드 머티어리얼스, 인코포레이티드 Carbon-doped-si oxide etch using h2 additive in fluorocarbon etch chemistry
US20060118519A1 (en) * 2004-12-03 2006-06-08 Applied Materials Inc. Dielectric etch method with high source and low bombardment plasma providing high etch rates
US8780911B2 (en) * 2009-10-08 2014-07-15 Force10 Networks, Inc. Link aggregation based on port and protocol combination
JP5655296B2 (en) * 2009-12-01 2015-01-21 セントラル硝子株式会社 Etching gas
JP2013030531A (en) * 2011-07-27 2013-02-07 Central Glass Co Ltd Dry etching agent
US8652969B2 (en) * 2011-10-26 2014-02-18 International Business Machines Corporation High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
JP6096438B2 (en) * 2012-08-27 2017-03-15 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus
US9013027B2 (en) * 2013-07-25 2015-04-21 Infineon Technologies Ag Semiconductor device, a semiconductor wafer structure, and a method for forming a semiconductor wafer structure
US9576773B2 (en) * 2013-07-30 2017-02-21 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials
JP2015079793A (en) * 2013-10-15 2015-04-23 東京エレクトロン株式会社 Plasma processing method
JP6230930B2 (en) 2014-02-17 2017-11-15 東京エレクトロン株式会社 Manufacturing method of semiconductor device
JP6498022B2 (en) * 2015-04-22 2019-04-10 東京エレクトロン株式会社 Etching method

Also Published As

Publication number Publication date
JP2017117883A (en) 2017-06-29
US10410877B2 (en) 2019-09-10
TWI743072B (en) 2021-10-21
JP6385915B2 (en) 2018-09-05
KR102121640B1 (en) 2020-06-10
CN107039229A (en) 2017-08-11
CN107039229B (en) 2019-08-20
US20170178922A1 (en) 2017-06-22
TW201732923A (en) 2017-09-16
KR20170074784A (en) 2017-06-30

Similar Documents

Publication Publication Date Title
SG10201610659YA (en) Etching Method
SG10201604315QA (en) Etching Method
SG10201610044VA (en) Plasma etching method
GB201502645D0 (en) Method
GB201502810D0 (en) Method
SG11201703122PA (en) Plasma etching method
SG10201610489WA (en) Etching method
GB201501941D0 (en) Method
GB201506870D0 (en) Method
GB201500427D0 (en) Method
EP3265120C0 (en) Method
GB201506869D0 (en) Method
SG10201510131WA (en) Plasma Etching Method
GB201507581D0 (en) Method
GB201501565D0 (en) Method
SG10201604313XA (en) Etching Method
SG11201705639VA (en) Plasma etching method
SG10201510383WA (en) Plasma Etching Method
GB201510649D0 (en) Method
GB201509961D0 (en) Method
GB201503792D0 (en) Method
GB201502409D0 (en) Method
GB201515716D0 (en) Method
GB201515711D0 (en) Method
GB201515712D0 (en) Method