SG11201703122PA - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- SG11201703122PA SG11201703122PA SG11201703122PA SG11201703122PA SG11201703122PA SG 11201703122P A SG11201703122P A SG 11201703122PA SG 11201703122P A SG11201703122P A SG 11201703122PA SG 11201703122P A SG11201703122P A SG 11201703122PA SG 11201703122P A SG11201703122P A SG 11201703122PA
- Authority
- SG
- Singapore
- Prior art keywords
- plasma etching
- etching method
- plasma
- etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014221423 | 2014-10-30 | ||
PCT/JP2015/079785 WO2016068004A1 (en) | 2014-10-30 | 2015-10-22 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201703122PA true SG11201703122PA (en) | 2017-06-29 |
Family
ID=55857343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201703122PA SG11201703122PA (en) | 2014-10-30 | 2015-10-22 | Plasma etching method |
Country Status (8)
Country | Link |
---|---|
US (1) | US20170243756A1 (en) |
EP (1) | EP3214640B1 (en) |
JP (1) | JP6696429B2 (en) |
KR (1) | KR102494959B1 (en) |
CN (1) | CN107112232A (en) |
SG (1) | SG11201703122PA (en) |
TW (1) | TWI670768B (en) |
WO (1) | WO2016068004A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102340870B1 (en) * | 2016-03-16 | 2021-12-16 | 니폰 제온 가부시키가이샤 | Plasma Etching Method |
JP6637838B2 (en) * | 2016-05-26 | 2020-01-29 | 東京エレクトロン株式会社 | Plasma processing method |
JP2018046185A (en) * | 2016-09-15 | 2018-03-22 | 東京エレクトロン株式会社 | Method for etching silicon oxide and silicon nitride mutually and selectively |
US10305029B1 (en) | 2017-11-10 | 2019-05-28 | International Business Machines Corporation | Image reversal process for tight pitch pillar arrays |
US10304692B1 (en) * | 2017-11-28 | 2019-05-28 | International Business Machines Corporation | Method of forming field effect transistor (FET) circuits, and forming integrated circuit (IC) chips with the FET circuits |
KR102104240B1 (en) | 2018-08-13 | 2020-04-24 | 아주대학교 산학협력단 | Plasma etching method |
KR102327416B1 (en) * | 2019-08-20 | 2021-11-16 | 아주대학교산학협력단 | Plasma etching method |
KR102328590B1 (en) * | 2019-09-16 | 2021-11-17 | 아주대학교산학협력단 | Plasma etching method |
JP7387377B2 (en) * | 2019-10-18 | 2023-11-28 | キオクシア株式会社 | Plasma etching method and plasma etching device |
KR102389081B1 (en) * | 2020-04-06 | 2022-04-20 | 아주대학교산학협력단 | Plasma etching method using perfluoroisopropyl vinyl ether (pipve) |
KR20220008007A (en) | 2020-07-13 | 2022-01-20 | (주)옵토레인 | Metal-Assisted Chemical Etching Process for Silicon Substrate |
KR102441772B1 (en) * | 2020-11-13 | 2022-09-07 | 아주대학교산학협력단 | Plasma etching method |
WO2024029776A1 (en) * | 2022-08-05 | 2024-02-08 | 아주대학교산학협력단 | Plasma etching method using heptafluoropropyl methyl ether and heptafluoroisopropyl methyl ether |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5440170B2 (en) | 1973-10-22 | 1979-12-01 | ||
US6121163A (en) * | 1996-02-09 | 2000-09-19 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
JP2972786B2 (en) * | 1996-11-05 | 1999-11-08 | 工業技術院長 | Dry etching gas |
JPH10223614A (en) * | 1997-02-12 | 1998-08-21 | Daikin Ind Ltd | Etching gas and cleaning gas |
JP3400770B2 (en) * | 1999-11-16 | 2003-04-28 | 松下電器産業株式会社 | Etching method, semiconductor device and manufacturing method thereof |
US6455479B1 (en) * | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
KR20020017182A (en) * | 2000-08-29 | 2002-03-07 | 윤종용 | Method for manufacturing semiconductor device using octafluorobutene etching gas |
US7256134B2 (en) * | 2003-08-01 | 2007-08-14 | Applied Materials, Inc. | Selective etching of carbon-doped low-k dielectrics |
CN101015044A (en) * | 2004-05-31 | 2007-08-08 | 独立行政法人产业技术综合研究所 | Dry etching gases and method of dry etching |
US7581549B2 (en) * | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
CN100461344C (en) * | 2004-07-23 | 2009-02-11 | 气体产品与化学公司 | Method for removing carbon-containing residues from a substrate |
JP2008053507A (en) * | 2006-08-25 | 2008-03-06 | Matsushita Electric Ind Co Ltd | Dry etching method |
WO2009142281A1 (en) * | 2008-05-22 | 2009-11-26 | 旭硝子株式会社 | Method for cleaning with fluorine compound |
US20110088718A1 (en) * | 2009-10-16 | 2011-04-21 | Matheson Tri-Gas, Inc. | Chamber cleaning methods using fluorine containing cleaning compounds |
US9028924B2 (en) * | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
-
2015
- 2015-10-21 TW TW104134474A patent/TWI670768B/en active
- 2015-10-22 CN CN201580059034.0A patent/CN107112232A/en active Pending
- 2015-10-22 KR KR1020177013905A patent/KR102494959B1/en active IP Right Grant
- 2015-10-22 JP JP2016556524A patent/JP6696429B2/en active Active
- 2015-10-22 EP EP15855011.1A patent/EP3214640B1/en active Active
- 2015-10-22 SG SG11201703122PA patent/SG11201703122PA/en unknown
- 2015-10-22 US US15/519,897 patent/US20170243756A1/en not_active Abandoned
- 2015-10-22 WO PCT/JP2015/079785 patent/WO2016068004A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
TWI670768B (en) | 2019-09-01 |
JPWO2016068004A1 (en) | 2017-08-10 |
WO2016068004A1 (en) | 2016-05-06 |
US20170243756A1 (en) | 2017-08-24 |
JP6696429B2 (en) | 2020-05-20 |
EP3214640A4 (en) | 2018-06-20 |
EP3214640A1 (en) | 2017-09-06 |
KR102494959B1 (en) | 2023-02-01 |
CN107112232A (en) | 2017-08-29 |
TW201620037A (en) | 2016-06-01 |
EP3214640B1 (en) | 2020-01-15 |
KR20170076737A (en) | 2017-07-04 |
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