SG10201508134VA - Workpiece Processing Method - Google Patents
Workpiece Processing MethodInfo
- Publication number
- SG10201508134VA SG10201508134VA SG10201508134VA SG10201508134VA SG10201508134VA SG 10201508134V A SG10201508134V A SG 10201508134VA SG 10201508134V A SG10201508134V A SG 10201508134VA SG 10201508134V A SG10201508134V A SG 10201508134VA SG 10201508134V A SG10201508134V A SG 10201508134VA
- Authority
- SG
- Singapore
- Prior art keywords
- processing method
- workpiece processing
- workpiece
- processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014206614A JP6382055B2 (en) | 2014-10-07 | 2014-10-07 | Method for processing an object |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201508134VA true SG10201508134VA (en) | 2016-05-30 |
Family
ID=54199559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201508134VA SG10201508134VA (en) | 2014-10-07 | 2015-09-30 | Workpiece Processing Method |
Country Status (7)
Country | Link |
---|---|
US (1) | US9607811B2 (en) |
EP (1) | EP3007205B1 (en) |
JP (1) | JP6382055B2 (en) |
KR (1) | KR102311575B1 (en) |
CN (2) | CN105489483A (en) |
SG (1) | SG10201508134VA (en) |
TW (1) | TWI661464B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6559430B2 (en) | 2015-01-30 | 2019-08-14 | 東京エレクトロン株式会社 | Method for processing an object |
JP6462477B2 (en) | 2015-04-27 | 2019-01-30 | 東京エレクトロン株式会社 | Method for processing an object |
KR102362282B1 (en) | 2016-03-29 | 2022-02-11 | 도쿄엘렉트론가부시키가이샤 | How to process the object |
KR20170114579A (en) | 2016-04-05 | 2017-10-16 | 주식회사 만도 | Voltage control method and system thereof |
JP6541618B2 (en) * | 2016-05-25 | 2019-07-10 | 東京エレクトロン株式会社 | Method of processing an object |
JP6832171B2 (en) | 2017-01-24 | 2021-02-24 | 東京エレクトロン株式会社 | Plasma processing method including cleaning of the inside of the chamber body of the plasma processing device |
JP6895352B2 (en) * | 2017-09-12 | 2021-06-30 | 東京エレクトロン株式会社 | How to process the work piece |
JP6886940B2 (en) * | 2018-04-23 | 2021-06-16 | 東京エレクトロン株式会社 | Plasma processing method |
CN110581050A (en) * | 2018-06-07 | 2019-12-17 | 东京毅力科创株式会社 | Processing method and plasma processing apparatus |
JP7345283B2 (en) * | 2018-07-26 | 2023-09-15 | 東京エレクトロン株式会社 | Plasma treatment method and plasma treatment device |
JP7178918B2 (en) | 2019-01-30 | 2022-11-28 | 東京エレクトロン株式会社 | Etching method, plasma processing apparatus, and processing system |
JP7240946B2 (en) * | 2019-04-26 | 2023-03-16 | 株式会社トリケミカル研究所 | Silicon oxide film forming method |
US11955318B2 (en) | 2021-03-12 | 2024-04-09 | Applied Materials, Inc. | Ash rate recovery method in plasma strip chamber |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04137725A (en) * | 1990-09-28 | 1992-05-12 | Tonen Corp | Glass substrate polycrystalline silicon film |
JP4137725B2 (en) * | 2002-07-10 | 2008-08-20 | 松下電器産業株式会社 | Method and apparatus for determining processing dimension of joining member |
WO2008149988A1 (en) | 2007-06-08 | 2008-12-11 | Tokyo Electron Limited | Patterning method |
US7790531B2 (en) * | 2007-12-18 | 2010-09-07 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
US8647722B2 (en) * | 2008-11-14 | 2014-02-11 | Asm Japan K.K. | Method of forming insulation film using plasma treatment cycles |
JP5698950B2 (en) * | 2009-10-23 | 2015-04-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP4733214B1 (en) * | 2010-04-02 | 2011-07-27 | 東京エレクトロン株式会社 | Mask pattern forming method and semiconductor device manufacturing method |
US8252691B2 (en) * | 2010-04-14 | 2012-08-28 | Asm Genitech Korea Ltd. | Method of forming semiconductor patterns |
KR20120001339A (en) | 2010-06-29 | 2012-01-04 | 삼성전자주식회사 | Method of forming a micropattern for semiconductor devices |
JP5674375B2 (en) * | 2010-08-03 | 2015-02-25 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
US8298951B1 (en) * | 2011-04-13 | 2012-10-30 | Asm Japan K.K. | Footing reduction using etch-selective layer |
US9666414B2 (en) * | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
TWI576890B (en) * | 2012-02-20 | 2017-04-01 | Tokyo Electron Ltd | Power supply system, plasma processing device and plasma processing method |
KR102052936B1 (en) * | 2012-11-13 | 2019-12-06 | 삼성전자 주식회사 | Method for fabricating semiconductor device |
JP6366454B2 (en) * | 2014-10-07 | 2018-08-01 | 東京エレクトロン株式会社 | Method for processing an object |
-
2014
- 2014-10-07 JP JP2014206614A patent/JP6382055B2/en active Active
-
2015
- 2015-09-23 KR KR1020150134479A patent/KR102311575B1/en active IP Right Grant
- 2015-09-23 EP EP15186427.9A patent/EP3007205B1/en active Active
- 2015-09-25 US US14/866,467 patent/US9607811B2/en active Active
- 2015-09-29 CN CN201510634852.0A patent/CN105489483A/en active Pending
- 2015-09-29 CN CN202011049271.8A patent/CN112133630A/en active Pending
- 2015-09-30 SG SG10201508134VA patent/SG10201508134VA/en unknown
- 2015-10-06 TW TW104132754A patent/TWI661464B/en active
Also Published As
Publication number | Publication date |
---|---|
US20160099131A1 (en) | 2016-04-07 |
JP6382055B2 (en) | 2018-08-29 |
EP3007205A1 (en) | 2016-04-13 |
CN105489483A (en) | 2016-04-13 |
US9607811B2 (en) | 2017-03-28 |
TWI661464B (en) | 2019-06-01 |
JP2016076621A (en) | 2016-05-12 |
KR102311575B1 (en) | 2021-10-08 |
CN112133630A (en) | 2020-12-25 |
EP3007205B1 (en) | 2017-08-16 |
TW201626434A (en) | 2016-07-16 |
KR20160041764A (en) | 2016-04-18 |
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