TW202316603A - Semiconductor process equipment and wafer processing method - Google Patents

Abstract

A semiconductor process equipment and a wafer processing method. The semiconductor process equipment includes a process chamber and a heating chamber connected with the process chamber. The process chamber is provided with a base for carrying the wafer, the heating chamber is provided with a carrier for carrying the wafer, the process chamber is also provided with a wafer transfer piece for transferring the wafer between the base and the carrier, The heating chamber is also provided with a heating element, which is used to heat the wafer loaded on the carrier.

Description

Semiconductor process equipment and wafer processing methods

The application belongs to the technical field of semiconductor processing, and in particular relates to a semiconductor processing equipment and a wafer processing method.

In the process of semiconductor processing, magnetron sputtering is a common thin film preparation process. By bombarding the target, the particles in the target are sputtered and deposited on the surface of the substrate to form a thin film. As the size of semiconductors becomes smaller and smaller, in order to ensure the reliability of interconnection lines, copper is currently mostly used as a material for forming interconnection lines.

In the formation process of copper interconnection, it is usually necessary to form trenches and via holes on the substrate by means of photolithography, and then form barrier layers and copper layers in the via holes by means of physical vapor deposition. The electroplating method fills the trenches and vias. However, as the size of the semiconductor gradually decreases, the aspect ratio of the through hole gradually increases, so that during the process of depositing and forming the copper layer, the growth efficiency of the copper layer deposited at the opening of the through hole is too fast, and it is easy to The opening of the through hole is blocked, resulting in a void phenomenon, which leads to the scrapping of the semiconductor.

To solve this problem, copper reflow technology has attracted people's attention. Under the action of high temperature (usually above 300°C), the surface mobility and grain agglomeration of copper physically vapor deposited at low temperature are enhanced. Under the effect of diffusion and the capillary action of the etched channel, the copper atoms on the surface of the deposited copper film migrate and flow into the bottom of the etched deep hole, which can avoid the generation of voids in the channel. The entire reflow process can be composed of multiple cycles, and the number of cycles depends on the filling structure until the deep hole is completely filled.

However, the current heating device for realizing copper reflow has a complex structure and low processing efficiency.

The present application discloses a semiconductor process equipment and a wafer processing method to at least solve one of the above technical problems.

An embodiment of the present application provides a semiconductor process equipment, including a process chamber, and also includes a heating chamber communicated with the process chamber, the process chamber is provided with a base for carrying a wafer, and the heating chamber is provided with There is a carrier for carrying wafers, a sheet transfer member is also provided in the process chamber, and the transfer member is used to transfer wafers between the base and the carrier, and a heating chamber is also provided in the heating chamber. The heating element is used for heating the wafer carried on the carrier.

In the second aspect, the embodiment of the present application discloses a wafer processing method, which is applied to the above-mentioned semiconductor manufacturing equipment, and the processing method includes:

When the first wafer completes the first process on the base of the process chamber, the transfer member is controlled to transport the first wafer to the heating chamber, so as to perform a heating process on the first wafer ;

In the case of controlling the transfer member to remove the first wafer from the base of the process chamber, transport the second wafer on the base of the process chamber to the second wafer A wafer undergoes the first process, wherein the time period during which the second wafer undergoes the first process and the time period during which the first wafer undergoes the heating process at least partially overlap in time sequence.

In the technical solution disclosed in the embodiment of the present application, a heating chamber communicated with the process chamber is provided, and a heating element is installed in the heating chamber, and the process chamber and the heating chamber can respectively provide the first process space for the wafer and the second process space, the base set in the process chamber can carry wafers, the carrier set in the heating chamber can also carry wafers, the heating element can heat the wafers carried on the carrier, and the process chamber The chamber is also equipped with a film transfer unit, which can transfer wafers between the base and the carrier, so as to be able to switch between different processes. During the working process of the above semiconductor process equipment, corresponding processes can be performed in both the first process space and the second process space, which can improve the processing efficiency of the semiconductor process equipment.

The following disclosure provides many different embodiments, or examples, of different means for implementing the disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members An embodiment may be formed between the first member and the second member so that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

In addition, for ease of description, spatially relative terms such as "below", "below", "under", "above", "upper" and the like may be used herein to describe the relationship between one element or member and another(s) The relationship between elements or components, as illustrated in the figure. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and thus the spatially relative descriptors used herein should be interpreted similarly.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless expressly specified otherwise, all numerical ranges such as for amounts of materials disclosed herein, durations of time, temperatures, operating conditions, ratios of amounts, and the like, Amounts, values and percentages should be understood as being modified by the term "about" in all instances. Accordingly, unless indicated to the contrary, the numerical parameters set forth in this disclosure and the accompanying claims are approximations that may vary as desired. At a minimum, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges can be expressed herein as from one endpoint to the other or as between two endpoints. All ranges disclosed herein are inclusive of endpoints unless otherwise specified.

As shown in FIG. 1 and FIG. 2 , the embodiment of the present application discloses a semiconductor process equipment, which includes a process chamber 110 , the semiconductor process equipment further includes a heating chamber 120 , and the heating chamber 120 communicates with the process chamber 110 . Of course, the semiconductor process equipment also includes structures such as the chip transfer member 200, the carrier, the heating element 400, the top cover 140, and the base 150. When the semiconductor process equipment is used for sputtering process, the semiconductor process equipment can also include magnetic The magnetron sputtering element 160 , and the target 170 is disposed between the magnetron sputtering element 160 and the base 150 .

Wherein, the process chamber 110 is a structure for accommodating the wafer 700 and other devices in the semiconductor process equipment. The process chamber 110 has an inner cavity, and the wafer 700 and the above-mentioned base 150 and other components can be accommodated in the inner cavity. The base 150 is used for carrying the wafer 700 . Moreover, as mentioned above, in the semiconductor process equipment disclosed in this embodiment, a heating chamber 120 communicating with the process chamber 110 is provided. The process chamber 110 is used to provide the first process space 101 for the wafer 700, and the heating chamber 120 is used to provide the second process space 102 for the wafer 700. Both of the aforementioned two process spaces can provide accommodation space for the wafer 700 to process. The size of the first process space 101 and the second process space 102, that is, the process The dimensions of the chamber 110 and the heating chamber 120 can be determined according to actual needs, and are not limited here.

The first process space 101 and the second process space 102 communicate with each other, in this case, the wafer 700 can be switched between the first process space 101 and the second process space 102, which makes the wafer 700 in the first process After the corresponding process is completed in one of the space 101 and the second process space 102 , it can be moved to the other of the first process space 101 and the second process space 102 to continue another process. During this process, the overall process environment of the semiconductor process equipment will not be damaged, and the processing efficiency can be improved. In addition, during the working process of the above-mentioned semiconductor manufacturing equipment, the first process space 101 and the second process space 102 can respectively carry out corresponding processes, so that the processes in the first process space 101 and the second process space 102 do not interfere with each other, which means The processing efficiency of the wafer 700 can be further improved.

The carrier is disposed in the heating chamber 120 , and the carrier can carry the wafer 700 , so as to provide a supporting function for the wafer 700 when performing a corresponding process in the second process space 102 . Specifically, the carrier may be a bracket, or the carrier may further include a plurality of thimbles, which can ensure that the carrier has the ability to carry the wafer 700 . The carrier can be fixedly installed on the bottom or side of the heating chamber 120 , or the carrier can also be capable of moving relative to the process chamber 110 , so that the carrier can move the wafer 700 carried on the carrier.

The wafer transfer member 200 is installed in the process chamber 110, and the wafer transfer member 200 can move the wafer 700 for transferring the wafer 700 between the base 150 and the carrier, so that the wafer 700 can be placed in the process chamber respectively. The chamber 110 and the heating chamber 120 perform corresponding processes. Specifically, the chip transfer member 200 may be a robot arm, and the position of the wafer 700 can be changed by using the chip transfer member 200 . More specifically, the wafer 700 can be switched between the first process space 101 and the second process space 102 by using the transfer member 200 . The chip transfer member 200 can be specifically installed on the bottom or side of the process chamber 110, and the chip transfer member 200 can specifically fix the wafer 700 by grasping or supporting, and change the orientation of the wafer 700 by rotating or moving. Location.

The heating chamber 120 is also provided with a heating element 400. The heating element 400 can specifically be a device with heating capability such as a resistance wire. The heating element 400 can be fixed on the top, side, or bottom of the heating chamber 120 for carrying The wafer 700 on the carrier provides heating to increase the temperature of the wafer 700 .

In the technical solution disclosed in the embodiment of the present application, a heating chamber 120 communicating with the processing chamber 110 is provided, and a heating element 400 is installed in the heating chamber. The processing chamber 110 and the heating chamber 120 can be wafers 700 The first process space 101 and the second process space 102 are provided, the base 150 arranged in the process chamber 110 can carry the wafer 700, the carrier arranged in the heating chamber 120 can also carry the wafer 700, and the heating element 400 The wafer 700 carried on the carrier can be heated, and the process chamber 110 is also provided with a transfer member 200, which can transfer the wafer 700 between the base 150 and the carrier, so that it can be processed in different processes. switch between. During the working process of the above-mentioned semiconductor manufacturing equipment, corresponding manufacturing processes can be performed in both the first processing space 101 and the second processing space 102, which can improve the processing efficiency of the semiconductor manufacturing equipment.

Optionally, the wafer 700 is processed by using the above-mentioned semiconductor process equipment, and after the barrier layer and the copper layer are formed on the wafer 700 in the first process space 101, under the action of the chip transfer member 200, the aforementioned processes will be completed. The wafer 700 is moved to the carrier of the second process space 102, and under the heating of the heating element 400, the copper reflow process is performed, so that the copper material on the upper surface of the wafer 700 flows to the sinker on the upper surface of the wafer 700 under high temperature conditions and the bottom of the through hole, so as to prevent voids and improve the yield rate of the wafer 700.

As mentioned above, in the process of forming interconnection lines by using the above-mentioned semiconductor manufacturing equipment, the deposition process can be performed in the first process space 101 first, and then the wafer 700 in the first process space 101 can be moved by using the transfer member 200 to the carrier frame of the second process space 102, after that, the next wafer 700 can continue to be introduced into the first process space 101. At the same time, the heating element 400 in the second process space 102 works to make the wafer 700 Carrying out the copper reflow process, obviously, the processes between the first process space 101 and the second process space 102 do not interfere with each other, which can improve the processing efficiency of semiconductor process equipment; after that, the wafer 700 in the second process space 102 is completed In the case of the copper reflow process, the wafer 700 can be transferred back to the first process space 101 for cooling and other processes by using the transfer member 200, or the wafer 700 can be transferred out of the process chamber 110, and transferred to the first process space 101. into the process chamber 110 of another semiconductor process equipment for cooling and other processes. Correspondingly, the wafer 700 that was previously subjected to the deposition process in the first process space 101 can continue to be introduced into the second process space 102 and heated. for copper reflow process. Of course, the above-mentioned process is only one of the processes that can be performed by the semiconductor process equipment disclosed in the embodiment of the present application. The above-mentioned semiconductor process equipment can also be used to perform other processes, such as other reflow processes, which will not be listed here.

In the above process, in order to enable the positions of the wafers 700 in the first process space 101 and the second process space 102 to be exchanged, optionally, the number of the chip transfer members 200 is multiple, and the plurality of chip transfer members 200 are respectively The displacement function is provided for the wafer 700 in the first process space 101 and the second process space 102, thereby shortening the process interval and improving the processing efficiency.

In another embodiment of the present application, optionally, as shown in FIG. 1 , the number of the sheet transfer member 200 may be one, and the carrier is provided with a first bearing position 310 and a second bearing position 320, the first Both the carrying position 310 and the second carrying position 320 can carry the wafer 700 . In this case, at least two wafers 700 can be carried on the carrier, so that the positions of the wafers 700 in the first process space 101 and the second process workpiece can be exchanged under the action of a film transfer member 200 . In the case that the number of the chip transfer member 200 is one, on the one hand, the cost and control difficulty of the semiconductor process equipment can be reduced; Dimensions of chamber 110 .

Specifically, the distribution directions of the first bearing position 310 and the second bearing position 320 can be various. Optionally, the first bearing position 310 and the second bearing position 320 are arranged flush in the bearing direction. In this case, The heating element 400 can be arranged on the top wall of the heating chamber 120. In this case, no matter whether the wafer 700 is carried on the first loading position 310 or the second loading position 320, it can be ensured that the heating element 400 can be used for the wafer 700. Provides reliable and efficient heating.

In another embodiment of the present application, optionally, the first bearing position 310 and the second bearing position 320 are distributed along the vertical direction, in this case, the first bearing position 310 and the second bearing position can be reduced 320, and can shorten the film transfer distance of the film transfer member 200 to a certain extent. Specifically, both the first bearing position 310 and the second bearing position 320 may include brackets, and the two brackets form a preset distance in the vertical direction. Correspondingly, during the working process of the semiconductor manufacturing equipment, the wafer transfer member 200 can transfer the wafer 700 on the base 150 to the first carrying position 310 or the second carrying position 320, and transfer the first carrying position 310 or the second carrying position The wafer 700 on the carrier 320 is transferred to the base 150 .

It should be noted that the wafer 700 on the base 150 can be transferred to the first loading position 310 or the second loading position 320. Similarly, the first loading position 310 and the second loading position 320 The wafer 700 carried on the base can be transferred to the base 150 by the transfer member 200, but at the same time point, only the wafer 700 on the base 150 can be transferred to the first loading position 310 and the second loading position. One of 320 , correspondingly, the wafer 700 on one of the first loading position 310 and the second loading position 320 is transferred to the base 150 .

In the above technical solution, in order to ensure that the sheet transfer member 200 has the ability to transfer the wafer 700 to the first loading position 310 and the second loading position 320, the sheet transfer member 200 can be equipped with lifting capabilities, that is, the sheet transfer member 200 can be moved along the Vertical movement, so that when the wafer transfer member 200 transfers the wafer 700 to the first bearing position 310 and the second bearing position 320 with different heights, the transfer member 200 can lift or lower the transferred wafer 700 corresponds to the height of the corresponding carrying structure (including the first carrying position 310 and the second carrying position 320), and then, with the rotation of the sheet transfer member 200, the wafer 700 can be transferred to the corresponding carrying structure , after that, the chip transfer member 200 descends, so that the wafer 700 is carried on the corresponding carrying structure.

Alternatively, the semiconductor manufacturing equipment provided in the embodiment of the present application may further include a driver 510, and the carrier is connected to the driver 510, and then the driver 510 is used to drive the carrier to move in the vertical direction. In the case of adopting this technical solution, it is enough to make the sheet transfer member 200 only have the ability to rotate. By matching the carrier frame with the chip transfer member 200 , the chip transfer member 200 can also transfer the wafer 700 on the base 150 to the first loading position 310 or the second loading position 320 . Moreover, in this case, the action of the sheet conveying member 200 can be made more simple, thereby reducing the difficulty of controlling the sheet conveying member 200 and improving the reliability of the sheet conveying member 200 . Specifically, the driver 510 can be a linear motor, etc., and the driver 510 can be installed outside the process chamber 110, and the driver 510 can be connected with the carrier by means of a connecting shaft 520 and other structures, thereby ensuring that the driver 510 can drive the carrier along the The load direction moves.

In the case where the first bearing position 310 and the second bearing position 320 are distributed along the vertical direction, optionally, in the vertical direction, heating elements 400 are provided above and below the carrying frame, and the heating elements 400 are fixed On the side wall of the heating chamber 120 . In the case of adopting the aforementioned technical solution, no matter whether the wafer 700 is carried on the first supporting position 310 or the second supporting position 320 , the heat generated by the heating element 400 can act on the wafer 700 . Moreover, the upper surface of the wafer 700 carried on the carrier can be directly heated by using the heating element 400 above the carrier, thereby further improving the heating efficiency of the copper material located on the upper surface of the wafer 700, thereby shortening the lifetime of the wafer 700. Heating time, improve processing efficiency. Under the action of the heating element 400 located under the carrier, the wafer 700 can be heated on the bottom of the wafer 700 to ensure that the temperature of the entire wafer 700 is more uniform, and further improve the process effect of copper reflow. More specifically, in the vertical direction, the distance between the heating element 400 above the carrier and the first bearing position 310 and the distance between the heating element 400 below the carrier and the second bearing position 320 can be equal. 20mm~30mm.

Furthermore, as shown in FIG. 1 , a plurality of heating elements 400 spaced apart from each other in the vertical direction are arranged on the side wall of the heating chamber 120, wherein the interval between adjacent heating elements 400 can be determined according to the actual situation. , is not limited here. For example, the heating elements 400 located above and below the carrier may be distributed along the vertical direction. In this case, the heat uniformity of the wafer 700 carried on the first supporting position 310 and the second supporting position 320 can be relatively better.

Furthermore, as shown in Figure 2, in the direction perpendicular to the vertical direction, or in other words, in the direction perpendicular to the bearing direction of the carrier, a plurality of vertical The heating elements 400 are spaced apart from each other. In this case, the opposite sides of the wafer 700 supported on the first supporting position 310 and the second supporting position 320 can be heated by the heating element 400 , from the opposite sides of the wafer 700 In the case of heating the wafer 700, the heating efficiency of the wafer 700 can be further improved, and the heating uniformity of the wafer 700 can be improved, and the process effect can be improved.

In more detail, the heating element 400 can be fixed on the side wall of the heating chamber 120, specifically, the heating element 400 can be a heating lamp tube, which can be fixed on the inner side wall of the heating chamber 120 through a lamp holder, and can be used as a lamp holder By connecting an external power source, the heating element 400 installed on the inner wall of the heating chamber 120 can provide heating for the wafer 700 carried on the first loading position 310 and the second loading position 320 .

In order to further improve the heating uniformity of the wafer 700 carried on the carrier, optionally, the semiconductor process equipment disclosed in the embodiment of the present application may further include a driver 510, the carrier is connected to the driver 510, and the driver 510 can drive the carrier Rotate around the central axis of the carrier, so that when the wafer 700 is carried on the carrier, the driver 510 can be used to drive the carrier to rotate, further improving the heating uniformity of the wafer 700 . Specifically, the driver 510 can be a rotating motor, which can be installed outside the heating chamber, and the driver 510 can be connected to the carrier through a connecting shaft 520 to ensure that the driver 510 has the ability to drive the carrier to rotate.

In the process of using heating to promote the copper material on the upper surface of the wafer 700 to flow into the bottom of the through hole and sinker, as shown in Figure 3, the temperature of the wafer 700 rises, and the effect of the copper reflow process is relatively better, based on Here, the heated temperature of the wafer 700 can specifically exceed 150°C. Furthermore, as the heated temperature of the wafer 700 increases, the agglomeration phenomenon at the top becomes more obvious. Therefore, the heating temperature can be controlled at Between 175°C and 225°C to ensure that the copper reflow process has the best process effect.

As mentioned above, the process chamber 110 and the heating chamber 120 communicate with each other. Specifically, the process chamber 110 and the heating chamber 120 can be formed in an integrated manner, or the process chamber 110 and the heating chamber 120 can also be formed by The process chamber 110 and the heating chamber 120 are fixedly connected as a whole by welding and other methods. In this technical solution, the side wall of the processing chamber 110 is provided with an opening, and the heating chamber 120 The opening is sealed and connected to the process chamber 110 to ensure that the semiconductor process equipment can form a closed process environment.

Moreover, the top wall of the heating chamber 120 is provided with an inspection port. During the use of the semiconductor process equipment, the inspection port can be used to check the heating chamber 120 and devices such as the carrier and the heating element 400 installed in the heating chamber 120. Carry out maintenance work, which can reduce the difficulty of maintenance. At the same time, a cover plate 130 is detachably covered on the inspection port to provide a second process space 102 for the wafer 700 that meets requirements. Specifically, the shape and size of the cover plate 130 can be correspondingly designed according to the shape and size of the inspection port of the heating chamber 120 , and the cover plate 130 and the heating chamber 120 can be detachably fixedly connected by screws 180 and other connectors.

As mentioned above, the heating element 400 is installed in the heating chamber 120, and the heating element 400 can be installed on the inner side wall of the heating chamber 120. In this case, the heat of the heating element 400 can be transferred to the inside of the heating chamber 120. On the wall, based on this, optionally, the semiconductor processing equipment provided by the embodiment of the present application may also include a cooling mechanism, which is arranged on the outside of the side wall of the heating chamber 120, so as to provide cooling for the outer wall of the heating chamber 120 by means of the cooling mechanism. cooling, so as to prevent workers from contacting the outer wall of the heating chamber 120 and being scalded. Specifically, the cooling mechanism can be a water-cooling mechanism, which can include a water inlet 610 and a water outlet 620, and by attaching the cooling pipeline of the cooling mechanism to the outer wall of the heating chamber 120, cooling water can be used to cool the heating chamber 120. Allow to cool.

Based on the semiconductor process equipment disclosed in the above embodiments, the embodiment of the present application also discloses a semiconductor heating method, which includes:

S1. When the first wafer is completed on the base of the process chamber to complete the first process, control the transfer member to transport the first wafer to the heating chamber, so as to perform a heating process on the first wafer. As mentioned above, after the traditional process such as deposition of the wafer is completed, that is, after the first process, the wafer needs to be heated to make the processing effect of the wafer relatively better. Specifically, based on the semiconductor process equipment disclosed in the above embodiments, a base is provided in the process chamber, and the base can provide support for the wafer, and then, when the process chamber is performing the first process, the wafer can be supported. on the base. Moreover, the semiconductor process equipment also includes a wafer transfer member, which can transfer the wafer to transfer the first wafer to the heating chamber. Correspondingly, the heating chamber is provided with a carrier, which is transferred to the heating chamber. The first wafer can be carried on the carrier, and the wafer transfer member can transfer the wafer between the base and the carrier.

Based on the above step S1, as shown in Figure 4, the processing method disclosed in this embodiment also includes:

S2. In the case of controlling the transfer member to remove the first wafer from the base of the process chamber, transfer the second wafer to the base of the process chamber, so that the second wafer is carried on the base Above all, it provides a basic condition for the second wafer to be able to perform the first process. Correspondingly, when the second wafer is carried on the base, it is considered that the second wafer can be subjected to the first process.

As mentioned above, the first wafer originally carried on the susceptor of the process chamber is transferred to the heating chamber by the control transfer member, and after the first wafer is removed from the susceptor, it can continue to be placed on the susceptor. Transfer the second wafer. At this time, the heating chamber and the process chamber are respectively provided with the first wafer and the second wafer, and the two need to perform the heating process and the first process respectively. Based on this, in the above step S2 In this method, the time period during which the second wafer undergoes the first process and the time period during which the first wafer undergoes the heating process at least partially overlap in time sequence. Simply put, during the process of performing the first process on the second wafer in the process chamber, the heating process on the first wafer in the heating chamber is also carried out correspondingly, and the start time and end point of the two processes can be The same or different, and the start sequence of the two manufacturing processes can also be selected according to the actual situation, which is not limited here. By adopting the above technical solution, the processing efficiency of the wafer is relatively higher.

Further, the carrier frame is provided with a first bearing position and a second bearing position along the vertical direction. Since the technical solution of the carrier frame including the first bearing position and the second bearing position has been introduced in detail above, considering the text It is concise and will not be described in detail here. Based on the foregoing technical solutions, in the processing method disclosed in the embodiment of the present application, the above step S1 includes:

S11. In the case where the first wafer is completed on the base of the process chamber, the first wafer is controlled to transfer the first wafer to the first carrying position of the carrier in the heating chamber, so as to process the first wafer circle for heating process. That is to say, in the case that the carrier includes the first carrying position and the second carrying position, when transferring the first wafer that has completed the first process, the transfer member can be specifically controlled to transfer the first wafer to the second carrying position of the carrier. on a carrying position, so that the first wafer undergoes a heating process at the first carrying position.

Moreover, based on the technical solution that the carrier includes the first carrying position and the second carrying position, when the first wafer is transferred to the first carrying bit, the second process bit of the carrying frame is still in a vacant state, and then , in the above-mentioned processing method, after step S2 also includes:

S3. In the case that the second wafer completes the first process on the base of the process chamber, control the transfer member to transfer the second wafer to the second loading position of the carrier in the heating chamber, so that the second The wafer undergoes a heating process. That is, by making the second wafer that has completed the first process also be transferred to the heating chamber, and the second wafer is carried on the second loading position, the pedestal of the process chamber can be vacant again, and then when the second wafer After a wafer completes the heating process, the base in the process chamber can be used to carry the first wafer again, and the process chamber can be used to provide an environment for the first wafer to perform the second process. Specifically, the embodiment of the present application In the disclosed processing method, after the above step S3, it also includes:

S4. In the case that the heating process of the first wafer is completed on the first loading position of the heating chamber, control the transfer member to transfer the first wafer to the base of the processing chamber, so as to carry out the first wafer on the first wafer. Second process. As mentioned above, in the case that the second wafer is transferred to the second carrier bit, the first wafer can be transferred back to the base of the process chamber in an empty state, and the process chamber can be used to control the first The wafer undergoes the second process.

Moreover, in the above step S4, the time period during which the first wafer is subjected to the second process and the time period during which the second wafer is subjected to the heating process are at least partially overlapped in time sequence. That is to say, during the second process of the first wafer, the second wafer can also undergo the heating process, and the start time and end time of the two processes can be the same or different, and the start time of the two processes The sequence can be selected according to the actual situation, which is not limited here. In the case of adopting the above technical solution, the processing efficiency of the semiconductor manufacturing equipment can be further improved.

The foregoing content summarizes the features of several embodiments, so that those skilled in the art can better understand aspects of the present disclosure. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.

101: The first process space 102: Second process space 110: Process chamber 120: heating chamber 130: cover plate 140: top cover 150: base 160:Magnetron sputtering components 170: target 180: screw 200: Passing the film 310: the first bearing position 320: the second bearing position 400: heating element 510: drive 520: connecting shaft 610: water inlet 620: water outlet 700: Wafer

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawings. It should be noted that, in accordance with the standard practice in the industry, various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a schematic structural diagram of semiconductor manufacturing equipment disclosed in an embodiment of the present application; Fig. 2 is a schematic diagram of part of the structure of the semiconductor manufacturing equipment disclosed in the embodiment of the present application; FIG. 3 is an electron micrograph of a semiconductor processed by the semiconductor manufacturing equipment disclosed in the embodiment of the present application at different temperatures; FIG. 4 is a flowchart of a wafer processing method disclosed in an embodiment of the present application.

101: The first process space

102: Second process space

110: Process chamber

120: heating chamber

130: cover plate

140: top cover

150: base

160:Magnetron sputtering components

170: target

200: Passing the film

310: the first bearing position

320: the second bearing position

400: heating element

510: drive

520: connecting shaft

610: water inlet

620: water outlet

700: Wafer

Claims (10)

A semiconductor process equipment, comprising a process chamber, and a heating chamber communicated with the process chamber, a base for carrying a wafer is arranged in the process chamber, and a base for carrying a wafer is arranged in the heating chamber A wafer carrier, the process chamber is also provided with a sheet transfer member, the sheet transfer member is used to transfer the wafer between the base and the carrier, the heating chamber is also provided with a heating element, The heating element is used for heating the wafer carried on the carrier. The semiconductor process equipment as claimed in item 1, wherein, a first carrying position and a second carrying position are arranged on the carrier along a vertical direction, and the sheet transfer member is used to transfer the wafer on the base to the first carrying position or the second carrying position, and transfer the wafer on the first carrying position or the second carrying position to the base. The semiconductor manufacturing equipment as claimed in Claim 2, wherein, in the vertical direction, the heating element is provided above and below the carrier, and the heating element is fixed on the side wall of the heating chamber. The semiconductor processing equipment as claimed in claim 2, the semiconductor processing equipment further includes a driver, the carrier is connected to the driver, and the driver is used to drive the carrier to move in the vertical direction, and/or surrounding the carrier The central axis turns. The semiconductor processing equipment as claimed in claim 2, wherein a plurality of the heating elements spaced from each other along the vertical direction are arranged on the side wall of the heating chamber. The semiconductor manufacturing equipment according to any one of claims 2-5, wherein the heating element is a heating lamp. The semiconductor processing equipment as claimed in claim 1, wherein an opening is provided on the side wall of the processing chamber, the heating chamber is sealed and connected to the processing chamber at the opening, and the heating chamber is connected to the processing chamber through the opening. The chambers are connected, and an inspection port is opened on the top wall of the heating chamber, and a cover plate is detachably covered on the inspection port. The semiconductor manufacturing equipment according to claim 1, wherein a cooling mechanism is provided outside the heating chamber for cooling the outer wall of the heating chamber. A wafer processing method applied to the semiconductor process equipment described in any one of Claims 1-8, the processing method comprising: When a first wafer completes a first process on the base of the process chamber, controlling the transfer member to transport the first wafer to the heating chamber, so as to process the first wafer a heating process; In the case of controlling the transfer member to remove the first wafer from the base of the process chamber, transfer a second wafer on the base of the process chamber to the second The wafer undergoes the first process, wherein the time period during which the second wafer undergoes the first process and the time period during which the first wafer undergoes the heating process at least partially overlap in time sequence. The processing method as claimed in item 9, wherein, a first carrying position and a second carrying position are arranged on the carrier along the vertical direction, and the transfer member is used to transfer the wafer on the base to the The first loading position or the second loading position, and the wafer on the first loading position or the second loading position is transferred to the base, in the processing method, In the case that the first wafer is completed on the base of the process chamber, the first wafer is controlled to transfer the first wafer to the heating chamber, so as to perform a process on the first wafer Heating process, including: When the first wafer completes the first process on the base of the process chamber, control the transfer member to transfer the first wafer to the first carrier of the carrier in the heating chamber bit, to perform the heating process on the first wafer; Under the condition of controlling the transfer member to remove the first wafer from the base of the process chamber, transfer the second wafer on the base of the process chamber to the second After the wafer undergoes the first process, it also includes: When the second wafer completes the first process on the base of the process chamber, control the transfer member to transfer the second wafer to the second carrier of the carrier in the heating chamber bit, to carry out the heating process on the second wafer; In the case that the first wafer completes the heating process on the first loading position of the heating chamber, the transfer member is controlled to transfer the first wafer to the base of the processing chamber, so as to The first wafer undergoes the second process, wherein the time period during which the first wafer undergoes the second process and the time period during which the second wafer undergoes the heating process at least partially overlap in time sequence.

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