KR20230164245A - Sputtering device - Google Patents

Abstract

The present invention relates to sputtering devices. This includes a reaction chamber, and a base for transporting the workpiece to be processed is installed within the reaction chamber. Also installed in the reaction chamber is an ejector pin mechanism capable of generating an upward and downward movement relative to the base to lift and transport the workpiece to be machined from the base. and a microwave heating mechanism installed in the reaction chamber and including a moving unit and a microwave transmitter connected thereto. Here, when the workpiece to be machined is transported by the ejector pin mechanism, the moving unit moves the microwave transmitter below the workpiece to be machined, so that the microwave transmitter emits microwaves toward the workpiece to be machined, thereby heating the workpiece to be machined. used to make The sputtering device provided in the embodiment of the present invention can quickly raise the temperature of the workpiece to be processed by improving the heating rate. Therefore, it effectively shortens the reflux process cycle time and improves production efficiency.

Description

Sputtering device {SPUTTERING DEVICE}

The present invention belongs to the field of sputtering technology, and more specifically to sputtering devices.

Copper interconnection process is an essential process in prior art chip back-end manufacturing. The copper interconnection process mainly includes the following processes: That is, first, a diffusion prevention layer is deposited on the etched hole channel, and then a copper seed layer is deposited again. Finally, the hole channels are filled through electroplating to form the final copper interconnection circuit. However, as chip feature size shrinks (can reach up to 20 nm or less), the aspect ratio of the vias (or trenches) increases, all the way to 3.8:1, with some interlayer vias even reaching 7:1 or You can reach more than that. If a copper seed layer is deposited using Physical Vapor Deposition (hereinafter abbreviated as 'PVD'), the growth rate of copper at the trench opening point is relatively fast, allowing the top of the trench to protrude. Therefore, during the subsequent electroplating process, the trench cannot be completely filled due to pre-sealing, resulting in the formation of a cavity. This affects the resistance of the interconnecting copper wires, affecting the electrical performance of the chip and even causing it to fail.

Copper reflux technology, which solves the chip feature size problem in processes below 20 nm, is attracting attention. Under the action of high temperature (usually above 300℃), both the surface mobility and particle cohesion of PVD deposited copper are enhanced, and under the diffusion action and capillary action of the etched hole channel, the surface copper atoms of the deposited copper film move to the etched deep It can prevent cavities from flowing into the bottom of the hole. In addition, the entire reflux process is achieved by combining several stages, and the number of cycles can be determined depending on the filling structure, thereby achieving the goal of completely filling the deep hole.

PVD equipment adopted in the copper reflux technology of the prior art typically includes a round ring-shaped reaction chamber, a support base installed in the reaction chamber and used to transport the wafer, and a target installed above the support base. When performing sputtering, a direct current (DC) power source can apply direct current power to the target to create a negative pressure relative to the grounded reaction chamber. Therefore, the reaction gas (for example, argon) in the reaction chamber is discharged to generate plasma, and the positively charged argon ions are attracted to the target of the negative bias voltage. If the energy of the argon ions is high enough, metal atoms escape the target surface and deposit on the wafer.

In order to meet the temperature requirements of the copper reflux process, a heating lamp tube is usually added to the reaction process and used to heat the wafer by thermal radiation after the film deposition process is completed. However, this heating method has relatively low heating efficiency and the wafer temperature increase rate is relatively slow. Therefore, a relatively large amount of time is consumed in the reflux process cycle (typically more than 30 minutes). If multiple reflux process cycle cycles have to be performed, more time is consumed, which seriously affects the yield.

The purpose of embodiments of the present invention is to provide a sputtering device to solve at least one of the technical problems existing in the prior art. This improves the heating rate and quickly raises the temperature of the workpiece to be processed, effectively shortening the reflux process cycle time and improving production efficiency.

A sputtering device provided to achieve the object of embodiments of the present invention includes a reaction chamber. A base for transporting the workpiece to be processed is installed within the reaction chamber.

It includes an ejector pin mechanism installed within the reaction chamber, the ejector pin mechanism capable of lifting and transporting the workpiece to be machined from the base by producing an upward and downward motion relative to the base; and

A microwave heating mechanism is installed within the reaction chamber and includes a moving unit and a microwave transmitter connected thereto. Here, when the workpiece to be processed is transported by the ejector pin mechanism, the moving unit moves the microwave transmitter below the workpiece to be processed, so that the microwave transmitter emits microwaves toward the workpiece to be processed. It is used to make the workpiece to be processed heatable.

Optionally, the reaction chamber:

a sputtering chamber in which a target and a sputtering mechanism are installed at the top and used to perform a sputtering process on the workpiece to be processed; and

and a receiving chamber located below the sputtering chamber. The microwave heating mechanism is installed in the receiving chamber and is used to perform a reflux process on the workpiece to be processed. Additionally, a through hole is provided between the receiving chamber and the sputtering chamber to communicate the two, and the base is installed within the receiving chamber and corresponds to the through hole. Additionally, the base is capable of being lifted up and down, and can move between the sputtering chamber and the receiving chamber through the through hole.

Optionally, the sputtering mechanism is:

A magnetron installed at the rear of the target; and

It is connected to the target and includes a direct current power source used to apply a bias to the target.

Optionally, the ejector pin mechanism is liftable, or the ejector pin mechanism is fixed and immovable relative to the base. The ejector pin mechanism also includes a plurality of ejector pins. The plurality of ejector pins are installed penetrating within the base or installed below the base.

Optionally, the plurality of ejector pins are made of a material capable of absorbing microwaves.

Optionally, the material capable of absorbing microwaves includes ceramic.

Optionally, the mobile unit:

a rotating arm installed vertically in the reaction chamber, located on one side of the base, and capable of rotating about its axis; and

It includes a transfer arm connected to the rotation arm. The microwave transmitter is installed on the transport arm.

Optionally, the electrical lead of the microwave transmitter is pulled out of the reaction chamber through the rotating arm.

Optionally, the transfer arm is made of metal. A cooling device is further installed on the transfer arm and is used to cool the microwave transmitter.

Optionally, the cooling device includes coolant channels installed in the transfer arm. The cooling water channel includes an inlet pipe, a cooling pipe, and an outlet pipe. The water intake pipe and the water outlet pipe are installed in the transfer arm, and both ends of the cooling pipe communicate with the water intake pipe and the water outlet pipe, respectively. The cooling tube is wound spirally on the microwave transmitter.

The beneficial effects of the embodiments of the present invention are as follows.

The sputtering device provided in the embodiment of the present invention emits microwaves toward the workpiece (wafer) to be processed through a microwave transmitter. The microwaves act directly on polar molecules within the workpiece (wafer) to be processed, heating the workpiece to be processed. The workpiece to be processed has a fast transfer speed. At the same time, the metal film deposited by sputtering on the surface of the workpiece to be machined can effectively reflect microwaves emitted from below and return them to the workpiece to be machined. Therefore, the efficiency of microwave use is further improved, heating efficiency is improved, and the workpiece to be processed can be heated quickly. Through this, the reflux process is implemented, shortening the reflux process cycle time and improving production efficiency.

In order to more clearly explain the technical solutions of the embodiments of the present invention, the following briefly introduces drawings necessary for description of the embodiments. In the following description, the accompanying drawings are only some embodiments of the present invention, and a person skilled in the art to which the present invention pertains can further obtain other drawings based on these accompanying drawings without creative efforts.
1 is a structural diagram of a sputtering device according to an embodiment of the present invention.
Figure 2 is a structural diagram of a sputtering device according to an embodiment of the present invention when heating a workpiece to be processed.
Figure 3 is a plan view of a microwave transmitter built into a transfer arm and a plurality of ejector pins according to an embodiment of the present invention.
Figure 4 is a plan view of a microwave transmitter according to an embodiment of the present invention moving downward on a workpiece to be machined.
Figure 5 is a layout view of a coolant channel in a transfer arm according to an embodiment of the present invention.

In order to more clearly explain the purpose, technical solution and advantages of the present invention, the implementation method of the present invention will be described in more detail below with reference to the accompanying drawings.

In one embodiment of the present invention, Figure 1 shows a structural diagram of a sputtering device 1 according to an embodiment of the present invention. The sputtering device 1 is used to perform a sputtering process and a reflux process on the workpiece 12 to be processed. When performing a sputtering process, particles (ions, neutral atoms, molecules) with a certain energy in the plasma generated in the reaction chamber 2 impact the surface of the target 11. As a result, atoms or molecules adjacent to the surface of the target 11 gain sufficiently large energy to finally escape from the surface of the target 11. It is also deposited on the workpiece 12 to be processed to form a film covering the workpiece 12 to be processed. The workpiece 12 to be processed is preferably a wafer, but is not limited thereto.

Specifically, the sputtering device (1) includes a reaction chamber (2), a base (3), an ejector pin mechanism (5) and a microwave heating mechanism (6). Here, the reaction chamber 2 is mainly used to provide an accommodation space for the sputtering process and reflux process of the workpiece 12 to be processed. Referring again to FIG. 1, in this embodiment, the reaction chamber 2 includes a sputtering chamber 21 and a receiving chamber 22. Here, a target 11 is installed at the top of the sputtering chamber 21. The target 11 may include a sputtering material such as copper (Cu), tantalum (Ta), titanium (Ti), or aluminum (Al), but is not limited thereto.

A sputtering mechanism 4 is further installed at the top of the sputtering chamber 21. This is used to perform a sputtering process on the workpiece 12 to be processed by acting on the target 11. Specifically, the sputtering mechanism 4 includes a magnetron 41 and a direct current power source (not shown). The magnetron 41 is installed at the rear of the target 11, but is not limited to this. In this embodiment, there are no special requirements for the selection of the magnetron 41, and general selection by a person skilled in the art to which the present invention pertains may be referred to. Referring again to Figure 1, the reaction chamber 2 is installed to be grounded. A direct current power source is connected to the target 11 in the reaction chamber 2 (sputtering chamber 21). Direct current power is used to apply bias to the target (11).

When the sputtering mechanism 4 performs sputtering, the direct current power supply applies a bias to the target 11 so that it has a negative pressure relative to the grounded reaction chamber 2. Therefore, plasma is generated by discharging the reaction gas (for example, argon) in the reaction chamber 2, and the positively charged argon ions are attracted to the target 11 of the negative bias voltage. If the energy of the argon ions is high enough, the metal atoms escape from the target surface and move downward. Additionally, a metal film is deposited on the top surface of the workpiece 12 to be processed to cover the workpiece 12 to be processed, and the magnetron sputtering process is completed. Of course, in actual application, the structure of the sputtering mechanism 4 is not limited to this. A person skilled in the art to which the present invention pertains may select other suitable types of sputtering processes according to actual sputtering needs.

The receiving chamber 22 is located below the sputtering chamber 21. For example, it is installed coaxially with the sputtering chamber 21, and one through hole 23 is provided between the receiving chamber 22 and the sputtering chamber 21. The through hole 23 communicates the receiving chamber 22 with the sputtering chamber 21, so that the workpiece 12 to be processed can move between the receiving chamber 22 and the sputtering chamber 21 through the through hole 23. It is used to create

Note that the structure of the reaction chamber 2 is not limited to this. In actual application, a person skilled in the art to which the present invention pertains may select another suitable structure of the reaction chamber 2 based on the implications of this embodiment.

In this embodiment, the sputtering chamber 21 and the receiving chamber 22 are defined by the same cavity 24. The cavity 24 is typically a round, ring-shaped reaction cavity, but is not limited thereto.

In this embodiment, the base 3 is installed within the reaction chamber 2. Specifically, it is installed at a position corresponding to the through hole 23 within the receiving chamber 22 and is used to transport the workpiece 12 to be processed. In addition, the base 3 is capable of being raised and lowered, and rises into the sputtering chamber 21 through the through hole 23, so that the workpiece 12 to be processed can be placed directly below the target 11 to perform the sputtering process. . When the workpiece 12 to be processed completes the sputtering process, the base 3 descends into the receiving chamber 22 through the through hole 23, and returns the workpiece 12 to be processed into the receiving chamber 22 for reflux. Carry out the process. The base 3 described above is preferably made of ceramic material, but is not limited thereto.

Referring back to Figure 1, the ejector pin mechanism 5 is installed within the reaction chamber 2. The ejector pin mechanism 5 can lift and transport the workpiece 12 to be machined from the base 3 by creating an upward and downward movement relative to the base 3. At this time, the workpiece 12 to be processed is located above the base 3, and heating can be performed by moving the microwave heating mechanism 6 to the bottom of the workpiece 12 to be processed. Specifically, there are two ways in which the above-described ejector pin mechanism 5 and base 3 produce relative lifting movement. One is that both the above-described ejector pin mechanism 5 and the base 3 can be raised and lowered. The other is that the above-described ejector pin mechanism 5 is fixed and does not move, but the base 3 can be raised and lowered. In both of these methods, the ejector pin mechanism 5 lifts and transports the workpiece 12 to be machined from the base 3, so that the workpiece 12 to be machined can be positioned above the base 3.

In this embodiment, the ejector pin mechanism 5 includes a plurality of ejector pins 51. A plurality of ejector pins 51 may be installed penetratingly within the base 3. That is, a plurality of ejector pins can be accommodated in the base (3). However, the installation method of the plurality of ejector pins 51 is not limited to this. A person skilled in the art to which the present invention pertains may select other suitable installation methods based on the implications of this embodiment. For example, a plurality of ejector pins 51 may be installed below the base 3. When performing a reflow process on the workpiece 12 to be processed, a plurality of ejector pins 51 penetrate the base 3. The workpiece 12 to be machined is lifted from the base 3 and the workpiece 12 to be machined is transported. Additionally, the method in which the plurality of ejector pins 51 penetrate the base 3 may be to rise through the plurality of ejector pins 51 and penetrate the base 3. Alternatively, the plurality of ejector pins 51 may be fixed so as not to move and lowered through the base 3 so that the plurality of ejector pins 51 penetrate the base 3.

In this embodiment, the plurality of ejector pins 51 are made of a material capable of absorbing microwaves, for example, ceramic. Metal materials can reflect microwaves. When the plurality of ejector pins 51 are made of metal and come into contact with the workpiece 12 to be machined, the contact positions of the plurality of ejector pins 51 absorb microwaves and unevenly heat the workpiece 12 to be machined. You can do it. Therefore, if the plurality of ejector pins 51 are manufactured from a material capable of absorbing microwaves, it is possible to prevent the contact positions between the plurality of ejector pins 51 and the workpiece 12 to be processed from being heated unevenly.

There may be various distribution methods of the plurality of ejector pins 51. For example, Figure 3 shows a top view of a microwave transmitter 62 built into the transfer arm 611 and a plurality of ejector pins 51 according to an embodiment of the present invention. The number of ejector pins 51 is three. In addition, when the transfer arm 611 is located above the base 3, all three ejector pins 51 are located around the transfer arm 611 and are located close to the edge of the workpiece 12 to be processed. distributed. The three ejector pins 51 are distributed spaced apart in the circumferential direction to stably support the workpiece 12 to be processed. Of course, in actual application, depending on the specific situation, the quantity of the ejector pins 51 can be set to, for example, 4, 5, or more than 5, and the distribution method of the ejector pins 51 can be set.

A microwave heating mechanism (6) is installed within the reaction chamber (2). Referring back to Figure 1, in this embodiment the microwave heating mechanism 6 is installed within the receiving chamber 22. Figure 2 shows a structural diagram when the sputtering device 1 according to an embodiment of the present invention heats the workpiece 12 to be processed. The microwave heating mechanism 6 includes a mobile unit 61 and a microwave transmitter 62. Microwave transmitter 62 is connected to mobile unit 61. The moving unit 61 is used to move the microwave transmitter 62 downward of the workpiece 12 to be machined when the workpiece 12 to be machined has completed the sputtering process and is transported by the ejector pin mechanism 5. . The microwave transmitter 62 is used to emit microwaves toward the workpiece 12 to be machined, thereby heating the workpiece 12 to be machined until it reaches the temperature required for the reflux process. Microwaves emitted from the microwave transmitter 62 generally refer to electromagnetic waves with a frequency of 300 MHz to 300,000 MHz and a wavelength of 1 m or less.

Note that the microwave transmitter 62 is not limited to being applied to the reflux process after magnetron sputtering described in the above-described embodiment. This may also be applied to the reflux process after other sputtering processes. In this embodiment, there are no special requirements for the selection of the microwave transmitter 62, and general selection by a person skilled in the art to which the present invention pertains can be referred to.

In this embodiment, referring to FIGS. 1 and 2 together, the moving unit 61 includes a transfer arm 611 and a rotation arm 612. Here, the rotating arm 612 is installed vertically in the reaction chamber 2 (specifically, the receiving chamber 22) and is located on one side of the base 3. Additionally, the rotation arm 612 can rotate about its axis, and the rotation angle is preferably 90 degrees, but is not limited thereto. A person skilled in the art to which the present invention pertains may select and install the corresponding rotation angle according to the actual situation. Additionally, the rotation of the rotary arm 612 is typically driven by a stepping motor (not shown) and a corresponding driving structure (eg, a variable speed gear box, etc.), but is not limited thereto. A person skilled in the art to which the present invention pertains may select other suitable driving means according to the general knowledge of the person skilled in the art in the prior art.

One end of the transfer arm 611 is connected to the rotation arm 612, so that the transfer arm 611 can be driven to rotate around the axis of the rotation arm 612 when rotated. Preferably, the transfer arm 611 is connected perpendicularly to the rotation arm 612. This connection method may be a bolt connection or a welding connection, but is not limited thereto. Also, as shown in FIG. 3, the structure of the transfer arm 611 and the distribution method of the ejector pin 51 match each other. Therefore, the transfer arm 611 is implemented so that it does not collide with the ejector pin mechanism 5 while rotating along its rotation path.

Referring again to FIG. 3, the microwave transmitter 62 is installed on the transfer arm 611. This can be fixed on the transfer arm 611, for example, by adopting an embedded method. Specifically, one insertion groove is provided on the transfer arm 611 and is used to fix the microwave transmitter 62 therein, but is not limited to this. The electrical connection wire of the microwave transmitter 62 further disclosed in this embodiment is drawn out from the reaction chamber 2 through the rotating arm 612. This implements connection with an external controller, but is not limited to this.

Figure 4 shows a plan view of the microwave transmitter 62 moving below the workpiece 12 to be processed according to an embodiment of the present invention. Rotation of the transfer arm 611 drives the microwave transmitter 62 to rotate and move downward to the workpiece 12 to be processed. Microwaves are emitted toward the workpiece 12 to be processed through the microwave transmitter 62 to heat the workpiece 12 to be processed. However, the structure of the moving unit 61 is not limited to this, and a person skilled in the art to which the present invention pertains may select a moving unit 61 of another suitable structure based on the implications of this embodiment.

Microwaves emitted from the microwave transmitter 62 may damage the ceramic base 3. Therefore, the transfer arm 611 of this embodiment is made of metal, reflects microwaves and protects the base 3. At the same time, the metal transfer arm 611 increases temperature relatively quickly and has a relatively high temperature. The microwave transmitter 62 is installed on the transfer arm 611, and when working for a long time, the temperature of the microwave transmitter 62 may be excessively high and cause it to become invalid. In order to solve the above problem, referring again to FIGS. 3 and 4, a cooling device is further installed on the transfer arm 611 and is used to cool the microwave transmitter 62. The cooling device may have various structures. For example, the cooling device may include a coolant channel 613 installed in the transfer arm 611, which is used to cool the microwave transmitter 62 by water cooling.

In this embodiment, Figure 5 shows the arrangement of the coolant channel 613 in the transfer arm 611 according to an embodiment of the present invention. The cooling water channel 613 includes an inlet pipe 6131, a cooling pipe 6132, and an outlet pipe 6133. Here, both the water intake pipe 6131 and the water outlet pipe 6133 are installed within the transfer arm 611. Both ends of the cooling pipe 6132 communicate with the water intake pipe 6131 and the water discharge pipe 6133, respectively. Real-time water exchange is performed on the cooling pipe (6132) through the water intake pipe (6131) and the water discharge pipe (6133). Cooling tube 6132 is wound spirally on microwave transmitter 62. The spiral winding method increases the contact area of the microwave transmitter 62 and improves water cooling efficiency, but is not limited to this.

The sputtering device 1 provided in this embodiment can be applied to PVD equipment, and is used to perform a sputtering process and a reflux process in the PVD process. Referring again to FIG. 1, when performing the sputtering process, the target 11 is mounted and fixed on the top of the reaction chamber 2 (sputtering chamber 21), and the workpiece 12 to be processed is placed on the base 3. Place it on the table. The base 3 drives the workpiece 12 to be processed to rise into the sputtering chamber 21. The sputtering mechanism 4 acts on the target 11 to cause metal atoms or molecules on the surface of the target 11 to escape and move downward to be deposited on the workpiece 12 to be machined. Through this, a metal film is formed that covers the workpiece 12 to be processed.

After the above-described sputtering process is completed, the base 3 is driven so that the workpiece 12 to be processed is lowered into the receiving chamber 22 to perform a reflux process. The ejector pin mechanism 5 lifts the workpiece 12 to be machined from the base 3 and transports the workpiece 12 to be machined. Referring again to FIG. 2, the rotary arm 612 drives the transfer arm 611 to rotate about the axis of the rotary arm 612, so that the microwave transmitter 62 rotates below the workpiece 12 to be processed. I order it. Thereafter, the microwave transmitter 62 is controlled to emit microwaves toward the rear of the workpiece 12 to be processed. Microwaves directly act on polar molecules within the workpiece 12 to be processed and heat the workpiece 12 to be processed. At the same time, the metal film deposited by sputtering on the top surface of the workpiece 12 to be processed can effectively reflect microwaves emitted from below and return them to the workpiece 12 to be processed. Therefore, the efficiency of using microwaves is further improved to improve heating efficiency and allow the workpiece 12 to be processed to be heated quickly. Through this, the reflux process is implemented, effectively shortening the reflux process cycle time and improving production efficiency.

The foregoing description illustrates and describes several preferred embodiments of the present invention. However, as described above, the present invention is not limited to the form disclosed herein, and should not be considered to exclude other embodiments. It can be applied to a variety of different combinations, modifications and environments. In addition, modifications can be made through the above implications or technology or knowledge in the related field within the scope of the invention described herein. However, modifications and changes made by those skilled in the art do not depart from the spirit and scope of the present invention, and all fall within the protection scope of the appended claims of the present invention.

Claims (11)

In the sputtering device,
Used to perform a sputtering process on the workpiece to be machined,
reaction chamber;
A base installed in the reaction chamber and transporting the workpiece to be processed;
a sputtering mechanism installed on the reaction chamber and used in the sputtering process of the workpiece to be processed;
an ejector pin mechanism installed in the reaction chamber and used to lift and transport the workpiece to be processed from the base when the workpiece to be processed performs a reflow process; and
A microwave heating mechanism is installed in the reaction chamber and includes a moving unit and a microwave transmitter, wherein the microwave transmitter is connected to the moving unit, and the moving unit causes the workpiece to be processed to complete the sputtering process. When transported by the ejector pin mechanism, the microwave transmitter is used to move the microwave transmitter below the workpiece to be machined, thereby heating the workpiece to be machined,
The mobile unit is,
a rotating arm installed vertically in the reaction chamber and located on a side of the base; and
One end includes a transfer arm connected to the rotation arm, the transfer arm can rotate by driving the rotation arm, and the microwave transmitter is built into the other end of the transfer arm,
A sputtering device, characterized in that the transfer arm is made of a metal material, and a cooling water channel is further disposed within the transfer arm, and is used to cool the microwave transmitter. According to paragraph 1,
The reaction chamber is,
a sputtering chamber used to perform the sputtering process on the workpiece to be machined; and
a receiving chamber located below the sputtering chamber and installed coaxially with the sputtering chamber, wherein the microwave heating mechanism is installed in the receiving chamber and is used to perform the reflux process on the workpiece to be processed; One communicating through hole is provided between the receiving chamber and the sputtering chamber, the base and the through hole are installed correspondingly within the receiving chamber, and when performing the sputtering process on the workpiece to be processed, the base is The base rises into the sputtering chamber through the through hole, and after the workpiece to be processed completes the sputtering process, the base descends into the receiving chamber through the through hole to perform the reflux process on the workpiece to be processed. A sputtering device characterized in that. According to paragraph 1,
The sputtering mechanism is,
a target installed at the top of the reaction chamber;
A magnetron installed at the rear of the target; and
A sputtering device connected to the target and comprising a direct current power source used to apply a bias to the target. According to paragraph 1,
The ejector pin mechanism includes a plurality of ejector pins, the plurality of ejector pins are accommodated in a base, and protrude from the base when the workpiece to be machined performs the reflow process to lift the workpiece to be machined from the base. A sputtering device characterized by lifting and transporting. According to clause 4,
A sputtering device, wherein the plurality of ejector pins are made of a material capable of absorbing microwaves. According to clause 5,
A sputtering device, wherein the material capable of absorbing microwaves includes ceramic. According to clause 4,
A sputtering device, wherein the plurality of ejector pins are distributed to match the structure of the transfer arm so that the transfer arm does not collide with the ejector pin mechanism while rotating along its rotation path. According to paragraph 1,
A sputtering device, characterized in that the electrical connection line of the microwave transmitter is pulled out from the reaction chamber through the rotating arm. According to paragraph 1,
A sputtering device, characterized in that the microwaves emitted from the microwave transmitter are electromagnetic waves with a frequency of 300 MHz to 300000 MHz and a wavelength of 1 m or less. According to paragraph 1,
A sputtering device, characterized in that one insertion groove is provided on the transfer arm and is used to secure the microwave transmitter therein. According to paragraph 1,
The cooling water channel includes an inlet pipe, a cooling pipe, and a water outlet pipe, the inlet pipe and the water outlet pipe are installed in the transfer arm, both ends of the cooling pipe communicate with the inlet pipe and the water outlet pipe, respectively, and A sputtering device, characterized in that the cooling tube is wound in a spiral shape on the microwave transmitter.