KR20220074934A - sputtering device - Google Patents

Abstract

The present invention relates to a sputtering apparatus. It includes a reaction chamber, in which a base for carrying a workpiece to be machined is installed. It also includes an ejector pin mechanism installed in the reaction chamber and capable of generating a lifting motion relative to the base to lift and transport the workpiece to be machined from the base; and a microwave heating mechanism installed in the reaction chamber and including a mobile unit and a microwave transmitter coupled thereto. Here, when the workpiece to be machined is conveyed by the ejector pin mechanism, the moving unit moves the microwave transmitter downward of the workpiece to be machined, so that the microwave transmitter emits microwaves toward the workpiece to be machined, thereby heating the workpiece to be machined. used to make The sputtering apparatus provided in the embodiment of the present invention can rapidly increase the temperature of the workpiece to be processed by improving the heating rate. Therefore, it effectively shortens the reflux process cycle time and improves the production efficiency.

Description

sputtering device

The present invention belongs to the field of sputtering technology, and more particularly relates to a sputtering apparatus.

The copper interconnect process is an indispensable process in prior art chip back-end fabrication. The copper interconnection process mainly includes the following processes. That is, first, a diffusion barrier layer is deposited on the etched hole channel, and then a copper seed layer is deposited again. Finally, the hole channels are filled through electroplating to form the final copper interconnect circuit. However, as the chip feature size shrinks (which can reach up to 20 nm or less), the aspect ratios of the vias (or trenches) all increase to 3.8:1, and the aspect ratios of some interlayer vias are even 7:1 or can reach more than that. When a copper seed layer is deposited by adopting a physical vapor deposition (Physical Vapor Deposition, hereinafter abbreviated as 'PVD') method, the growth rate of copper at the trench opening point is relatively fast, so that the top of the trench may protrude. Therefore, during the subsequent electroplating process, the trench cannot be completely filled due to the pre-sealing, resulting in the formation of a cavity. This affects the resistance of the interconnect copper wire, affecting the electrical performance of the chip, and even ineffective.

Copper reflux technology, which solves the problem of chip feature size in the 20nm or less process, is attracting attention. Both the surface mobility and particle cohesion of PVD-deposited copper are strengthened under the action of high temperature (usually 300°C or higher), and the surface copper atoms of the deposited copper film move under the diffusion action and capillary action of the etched hole channels to deep etched It is possible to prevent a cavity from being introduced into the bottom of the hole. In addition, the entire reflux process is made by a combination of cycles of several steps, and the number of cycles can be determined according to the filling structure, thereby achieving the purpose of completely filling the deep hole.

The PVD equipment employed in the prior art copper reflux technology typically includes a round ring-shaped reaction chamber, a support base installed in the reaction chamber and used to transport wafers, and a target installed above the support base. When sputtering is performed, a direct current (DC) power source may apply direct current power to the target to make it relatively negative pressure in the grounded reaction chamber. Accordingly, a reactive gas (eg, argon) in the reaction chamber is discharged to generate plasma, and positively charged argon ions are attracted to the target having a negative bias voltage. When the energy of the argon ions is high enough, metal atoms escape from the target surface and deposit on the wafer.

In order to meet the temperature requirements of the copper reflux process, it is usually used to heat the wafer by thermal radiation after the film deposition process is completed by adding a heating lamp tube to the reaction process. However, this heating method has relatively low heating efficiency, so that the wafer temperature rise rate is relatively slow. Therefore, a relatively large amount of time is consumed in the cycle of the reflux process (typically more than 30 minutes). If multiple reflux process cycle cycles have to be performed, more time is consumed, severely affecting yield.

It is an object of the present invention to provide a sputtering apparatus in order to solve at least one of the technical problems existing in the prior art. This improves the heating rate and rapidly increases the temperature of the workpiece to be machined, which can effectively shorten the reflux process cycle time and improve production efficiency.

A sputtering apparatus provided to achieve the object of the embodiment of the present invention includes a reaction chamber. A base for transporting a workpiece to be machined is installed in the reaction chamber.

It includes an ejector pin mechanism installed within the reaction chamber and capable of generating a lifting motion relative to the base to lift and transport the workpiece to be machined from the base; and

A microwave heating mechanism installed in the reaction chamber and comprising a mobile unit and a microwave transmitter coupled thereto is further included. wherein the moving unit moves the microwave transmitter downward of the workpiece to be machined when the workpiece to be machined is conveyed by the ejector pin mechanism, so that the microwave transmitter emits microwaves toward the workpiece to be machined, whereby the It is used to make the workpiece to be machined heated.

Optionally, the reaction chamber comprises:

a sputtering chamber having a target and a sputtering mechanism installed at the top thereof to perform a sputtering process on the workpiece to be machined; and

and a receiving chamber located below the sputtering chamber. The microwave heating mechanism is installed in the receiving chamber and is used to perform a reflux process on the workpiece to be machined. In addition, a through hole for communicating the two is provided between the receiving chamber and the sputtering chamber, and the base is installed in the receiving chamber and corresponds to the through hole. In addition, the base may be lifted and moved between the sputtering chamber and the receiving chamber through the through hole.

Optionally, the sputtering mechanism comprises:

a magnetron installed on the rear surface of the target; and

and a DC power source connected to the target and used to apply a bias to the target.

Optionally, the ejector pin mechanism is liftable, or the ejector pin mechanism is fixed relative to the base and does not move. The ejector pin mechanism also includes a plurality of ejector pins. The plurality of ejector pins are installed through the base or installed below the base.

Optionally, the plurality of ejector pins are made of a material capable of absorbing microwaves.

Optionally, the material capable of absorbing the microwave includes ceramic.

Optionally, the mobile unit comprises:

a rotary arm installed vertically in the reaction chamber, located at one side of the base, and capable of rotating about its axis; and

and a transfer arm connected to the rotary arm. The microwave transmitter is mounted on the transfer arm.

Optionally, an electrical lead of the microwave transmitter is drawn from the reaction chamber through the rotating arm.

Optionally, the transfer arm is made of a metal material. A cooling device is further installed on the transfer arm, and is used to cool the microwave transmitter.

Optionally, the cooling device comprises a cooling water channel installed in the transfer arm. The cooling water channel includes an inlet pipe, a cooling pipe, and an outlet pipe. The inlet pipe and the water outlet pipe are installed in the transfer arm, and both ends of the cooling pipe communicate with the inlet pipe and the water outlet pipe, respectively. The cooling tube is spirally wound over the microwave transmitter.

Advantageous effects of the examples of the present invention are as follows.

The sputtering apparatus provided in the embodiment of the present invention emits microwaves toward the workpiece (wafer) to be processed through the microwave transmitter. The microwave acts directly on the polar molecules in the workpiece (wafer) to be machined, and heats the workpiece to be machined. The workpiece to be machined has a high temperature of feeding. At the same time, the sputter-deposited metal film on the surface of the workpiece to be machined can effectively reflect the microwave emitted from below and return it to the workpiece to be machined. Therefore, the microwave utilization efficiency is further improved, the heating efficiency is improved, and the workpiece to be machined can be heated up quickly. Through this, by implementing the reflux process, the reflux process cycle time is shortened and the production efficiency is improved.

In order to more clearly explain the technical solution of the embodiment of the present invention, the following briefly introduces the drawings necessary for the description of the embodiment. The accompanying drawings in the following description are only some embodiments of the present invention, and those skilled in the art to which the present invention pertains may further obtain other drawings based on these accompanying drawings without creative efforts.
1 is a structural diagram of a sputtering apparatus according to an embodiment of the present invention.
2 is a structural diagram when the sputtering apparatus according to an embodiment of the present invention heats a workpiece to be processed.
3 is a plan view in which a microwave transmitter according to an embodiment of the present invention is embedded in a transfer arm and a plurality of ejector pins.
4 is a plan view of the microwave transmitter moving below the workpiece to be processed according to an embodiment of the present invention.
5 is a layout view of a coolant channel in a transfer arm according to an embodiment of the present invention;

In order to more clearly explain the object, technical solution and advantage of the present invention, the embodiment of the present invention will be described in more detail below with reference to the accompanying drawings.

In one embodiment of the present invention, Figure 1 shows a structural diagram of a sputtering apparatus 1 according to an embodiment of the present invention. The sputtering apparatus 1 is used to perform a sputtering process and a reflux process on the workpiece 12 to be machined. When performing the sputtering process, particles (ions, neutral atoms, molecules) having a constant energy in the plasma generated in the reaction chamber 2 impacts the surface of the target 11 . Due to this, atoms or molecules adjacent to the surface of the target 11 obtain sufficiently high energy to finally escape from the surface of the target 11 . It is also deposited on the workpiece 12 to be machined to form a film covering the workpiece 12 to be machined. The workpiece 12 to be machined is preferably, but not limited to, a wafer.

Specifically, the sputtering apparatus 1 includes a reaction chamber 2 , a base 3 , an ejector pin mechanism 5 and a microwave heating mechanism 6 . Here, the reaction chamber 2 is mainly used to provide an accommodation space for the sputtering process and the reflux process of the workpiece 12 to be machined. Referring again to FIG. 1 , in this embodiment, the reaction chamber 2 includes a sputtering chamber 21 and a receiving chamber 22 . Here, the target 11 is installed at the top in the sputtering chamber 21 . The target 11 may include a sputtering material such as copper (Cu), tantalum (Ta), titanium (Ti), or aluminum (Al), but is not limited thereto.

A sputtering mechanism 4 is further installed at the top of the sputtering chamber 21 . It acts on the target 11 and is used to perform a sputtering process on the workpiece 12 to be machined. Specifically, the sputtering mechanism 4 includes a magnetron 41 and a DC power supply (not shown). The magnetron 41 is installed on the rear surface of the target 11, but is not limited thereto. In this embodiment, there are no special requirements for the selection of the magnetron 41, and the general selection of those skilled in the art to which the present invention pertains may be referred to. Referring back to FIG. 1 , the reaction chamber 2 is installed to be grounded. The DC power supply is connected to the target 11 in the reaction chamber 2 (sputtering chamber 21). A DC power supply is used to apply a bias to the target 11 .

When the sputtering mechanism 4 performs sputtering, the DC power supply applies a bias to the target 11 to make it relatively negative pressure to the grounded reaction chamber 2 . Accordingly, plasma is generated by discharging a reactive gas (eg, argon) in the reaction chamber 2 , and argon ions having a positive charge are attracted to the target 11 having a negative bias voltage. When the energy of the argon ion is high enough, the metal atoms escape from the target surface and move down. In addition, a metal film is deposited on the upper surface of the workpiece 12 to be processed to form a metal film covering the workpiece 12 to be processed, and the magnetron sputtering process is completed. Of course, the structure of the sputtering mechanism 4 in practical application is not limited thereto. A person skilled in the art to which the present invention pertains may select other suitable types of sputtering processes according to actual sputtering needs.

The receiving chamber 22 is located below the sputtering chamber 21 . For example, it is installed coaxially with the sputtering chamber 21 , and one through hole 23 is provided between the receiving chamber 22 and the sputtering chamber 21 . The through hole 23 communicates the receiving chamber 22 with the sputtering chamber 21 so that the workpiece 12 to be machined can move between the receiving chamber 22 and the sputtering chamber 21 through the through hole 23 . used to make

Note that the structure of the reaction chamber 2 is not limited thereto. In practical application, those skilled in the art to which the present invention pertains may select the reaction chamber 2 having a different suitable structure based on the teachings of this embodiment.

In this embodiment, the sputtering chamber 21 and the receiving chamber 22 are defined by the same cavity 24 . The cavity 24 is typically, but is not limited to, a round ring-shaped reaction cavity.

In this embodiment, the base 3 is installed in the reaction chamber 2 . Specifically, it is installed in a position corresponding to the through hole 23 in the receiving chamber 22, and is used to transport the workpiece 12 to be machined. In addition, the base 3 is elevating, it rises to the inside of the sputtering chamber 21 through the through hole 23, and the workpiece 12 to be processed is located immediately below the target 11 to perform the sputtering process. . When the workpiece 12 to be machined completes the sputtering process, the base 3 descends to the inside of the receiving chamber 22 through the through hole 23 , and returns the workpiece 12 to be machined into the receiving chamber 22 for reflux. carry out the process The above-described base 3 is preferably made of a ceramic material, but is not limited thereto.

Referring again to FIG. 1 , the ejector pin mechanism 5 is installed in the reaction chamber 2 . The ejector pin mechanism 5 can generate a lifting motion relative to the base 3 to lift and transport the workpiece 12 to be machined from the base 3 . At this time, the workpiece 12 to be machined is located above the base 3 , and the microwave heating mechanism 6 can be moved to the lower side of the workpiece 12 to perform heating. Specifically, there are two ways in which the above-described ejector pin mechanism 5 and the base 3 generate a relative lifting motion. One is that both the ejector pin mechanism 5 and the base 3 described above can be raised and lowered. The other is that the above-described ejector pin mechanism 5 is fixed and does not move, but the base 3 can be raised and lowered. In both of these methods, the ejector pin mechanism 5 lifts and transports the workpiece 12 to be machined from the base 3 , so that the workpiece 12 to be machined can be positioned above the base 3 .

In this embodiment, the ejector pin mechanism 5 includes a plurality of ejector pins 51 . The plurality of ejector pins 51 may be installed through the base 3 . That is, the plurality of ejector pins may be accommodated in the base 3 . However, the installation method of the plurality of ejector pins 51 is not limited thereto. A person skilled in the art to which the present invention pertains may select another suitable installation method based on the teachings of this embodiment. For example, a plurality of ejector pins 51 may be provided below the base 3 . When the reflux process is performed on the workpiece 12 to be machined, the plurality of ejector pins 51 pass through the base 3 . The workpiece 12 to be machined is lifted from the base 3 and the workpiece 12 to be machined is transported. In addition, the method in which the plurality of ejector pins 51 penetrate the base 3 may be one that rises through the plurality of ejector pins 51 and penetrates the base 3 . Alternatively, by fixing the plurality of ejector pins 51 so as not to move and descending through the base 3 , the plurality of ejector pins 51 may be made to pass through the base 3 .

In this embodiment, the plurality of ejector pins 51 are made of a material capable of absorbing microwaves, for example, ceramic. A metal material may reflect microwaves. When the plurality of ejector pins 51 are made of a metal material and come into contact with the workpiece 12 to be machined, the contact positions of the plurality of ejector pins 51 absorb microwaves to non-uniformly raise the temperature of the workpiece 12 to be machined. can do it Therefore, if the plurality of ejector pins 51 are manufactured from a material capable of absorbing microwaves, the contact position between the plurality of ejector pins 51 and the workpiece 12 to be processed can be prevented from being heated non-uniformly.

There may be various distribution methods of the plurality of ejector pins 51 . For example, FIG. 3 shows a plan view in which a microwave transmitter 62 according to an embodiment of the present invention is embedded in a transfer arm 611 and a plurality of ejector pins 51 . The number of ejector pins 51 is three. Also, when the transfer arm 611 is positioned above the base 3, all three ejector pins 51 are positioned around the transfer arm 611, and are located close to the edge of the workpiece 12 to be machined. distributed The three ejector pins 51 are spaced apart and distributed in the circumferential direction to stably support the workpiece 12 to be machined. Of course, in actual application, the quantity of the ejector pins 51 may be set to, for example, 4, 5, and 5 or more according to specific circumstances, and the distribution method of the ejector pins 51 may be set.

A microwave heating mechanism 6 is installed in the reaction chamber 2 . Referring again to FIG. 1 , in this embodiment the microwave heating mechanism 6 is installed in the receiving chamber 22 . Figure 2 shows a structural diagram when the sputtering apparatus 1 according to an embodiment of the present invention heats the workpiece 12 to be processed. The microwave heating mechanism 6 comprises a mobile unit 61 and a microwave transmitter 62 . The microwave transmitter 62 is connected to the mobile unit 61 . The moving unit 61 is used to move the microwave transmitter 62 downward of the workpiece 12 to be machined when the workpiece 12 to be machined completes the sputtering process and is conveyed by the ejector pin mechanism 5 . . The microwave transmitter 62 is used to emit microwaves towards the workpiece 12 to be machined, thereby heating the workpiece 12 to be machined until the temperature required for the reflux process is reached. Microwaves emitted from the microwave transmitter 62 typically refer to electromagnetic waves having a frequency of 300 MHz to 300000 MHz and a wavelength of 1 m or less.

Note that the microwave transmitter 62 is not limited to being applied to the reflux process after magnetron sputtering described in the above-described embodiment. It can also be applied to the reflux process after other sputtering processes. In this embodiment, there are no special requirements for the selection of the microwave transmitter 62, reference may be made to the general selection of those skilled in the art to which the present invention pertains.

In this embodiment, referring together with FIGS. 1 and 2 , the moving unit 61 includes a transfer arm 611 and a rotary arm 612 . Here, the rotary arm 612 is vertically installed in the reaction chamber 2 (specifically, the accommodation chamber 22 ) and is located on one side of the base 3 . In addition, the rotary arm 612 can rotate about its axis, and the rotation angle is preferably 90 degrees, but is not limited thereto. A person skilled in the art to which the present invention pertains may select and install a corresponding rotation angle according to an actual situation. Also, the rotation of the rotary arm 612 is typically driven by a stepping motor (not shown) and a corresponding driving structure (eg, a variable speed gear box, etc.), but is not limited thereto. A person skilled in the art to which the present invention pertains may select other suitable driving means according to the general knowledge of the person skilled in the art in the prior art.

One end of the transfer arm 611 may be connected to the rotary arm 612 , and, when rotated, may drive the transfer arm 611 to rotate about the axis of the rotary arm 612 . Preferably, the transfer arm 611 is vertically connected with the rotary arm 612 . This connection method may be a connection by bolts or a connection by welding, but is not limited thereto. Also, as shown in FIG. 3 , the structure of the transfer arm 611 and the distribution method of the ejector pins 51 match each other. Therefore, it is implemented so that the transfer arm 611 does not collide with the ejector pin mechanism 5 in the process of rotating along its rotation path.

Referring again to FIG. 3 , the microwave transmitter 62 is mounted on the transfer arm 611 . It can be secured on the transfer arm 611 by employing a built-in method, for example. Specifically, one insertion groove is provided on the transfer arm 611 , and is used to fix the microwave transmitter 62 therein, but is not limited thereto. An electrical lead of the microwave transmitter 62 further disclosed in this embodiment is drawn out of the reaction chamber 2 through the rotary arm 612 . Through this, connection with an external controller is implemented, but the present invention is not limited thereto.

4 is a plan view showing the microwave transmitter 62 according to an embodiment of the present invention moved to the lower side of the workpiece 12 to be processed. Rotation of the transfer arm 611 drives the microwave transmitter 62 to rotate and move downward of the workpiece 12 to be machined. A microwave is emitted toward the workpiece 12 to be machined through the microwave transmitter 62 to heat the workpiece 12 to be machined. However, the structure of the mobile unit 61 is not limited thereto, and a person skilled in the art may select a mobile unit 61 having a different suitable structure based on the teachings of the present embodiment.

Microwaves emitted from the microwave transmitter 62 may damage the ceramic base 3 . Therefore, the transfer arm 611 of this embodiment is made of a metal material, reflects the microwave and protects the base 3 . At the same time, the metal transfer arm 611 has a relatively fast temperature rise and a relatively high temperature. The microwave transmitter 62 is installed on the transfer arm 611 , and the temperature of the microwave transmitter 62 may be excessively high during long-time operation. In order to solve the above problem, referring back to FIGS. 3 and 4 , a cooling device is further installed on the transfer arm 611 and used to cool the microwave transmitter 62 . The cooling device may have various structures. For example, the cooling device may include a cooling water channel 613 installed in the transfer arm 611 , which is used to cool the microwave transmitter 62 in a water cooling manner.

In this embodiment, FIG. 5 shows a layout view of the coolant channel 613 in the transfer arm 611 according to an embodiment of the present invention. The cooling water channel 613 includes an inlet pipe 6131 , a cooling pipe 6132 , and an outlet water pipe 6133 . Here, both the inlet pipe 6131 and the water outlet pipe 6133 are installed in the transfer arm 611 . Both ends of the cooling pipe 6132 communicate with the inlet pipe 6131 and the water outlet pipe 6133, respectively. Real-time water exchange is performed on the cooling pipe 6132 through the inlet pipe 6131 and the outlet pipe 6133 . Cooling tube 6132 is spirally wound over microwave transmitter 62 . The spiral winding method may increase the contact area of the microwave transmitter 62 to improve water cooling efficiency, but is not limited thereto.

The sputtering apparatus 1 provided in this embodiment can be applied to PVD equipment, which is used to perform a sputtering process and a reflux process in the PVD process. Referring back to Fig. 1, when performing the sputtering process, the target 11 is mounted and fixed to the top of the reaction chamber 2 (sputtering chamber 21), and the workpiece 12 to be machined is mounted to the base 3 put on top The base 3 drives the workpiece 12 to be machined to rise into the sputtering chamber 21 . The sputtering mechanism 4 acts on the target 11 , causing metal atoms or molecules on the surface of the target 11 to escape and move downwards to be deposited on the workpiece 12 to be machined. This forms a metal film covering the workpiece 12 to be machined.

After the above-described sputtering process is completed, the base 3 drives the workpiece 12 to be machined down into the receiving chamber 22 to perform the reflux process. The ejector pin mechanism 5 lifts the workpiece 12 to be machined from the base 3 and carries the workpiece 12 to be machined. Referring again to FIG. 2 , the rotary arm 612 drives the feed arm 611 to rotate about the axis of the rotary arm 612 to rotate the microwave transmitter 62 downward of the workpiece 12 to be machined. make it Then, the microwave transmitter 62 is controlled to emit microwaves toward the rear surface of the workpiece 12 to be machined. The microwaves act directly on the polar molecules in the workpiece 12 to be machined to heat the workpiece 12 to be machined. At the same time, the sputter-deposited metal film on the upper surface of the workpiece 12 to be machined effectively reflects the microwave emitted from the lower side, and can be returned to the workpiece 12 to be machined. Accordingly, the microwave utilization efficiency is further improved to improve the heating efficiency, and the workpiece 12 to be processed can be rapidly heated. Through this, by implementing the reflux process, the reflux process cycle time is effectively shortened and the production efficiency is improved.

The foregoing description illustrates and describes several preferred embodiments of the present invention. However, as described above, the present invention is not limited to the form disclosed herein, and should not be construed as excluding other embodiments. It can be applied to various other combinations, modifications, and environments. In addition, it can be modified through the above teachings or skill or knowledge in the related field within the scope of the present invention described herein. However, modifications and changes by those skilled in the art do not depart from the spirit and scope of the present invention, and all fall within the protection scope of the appended claims of the present invention.

Claims (10)

In the sputtering device,
and a reaction chamber having a base installed therein for transporting the workpiece to be machined,
an ejector pin mechanism installed in the reaction chamber and capable of generating a lifting motion relative to the base to lift and transport the workpiece to be machined from the base; and
and a microwave heating mechanism installed in the reaction chamber, the microwave heating mechanism comprising a moving unit and a microwave transmitter connected thereto, wherein the moving unit operates the microwave transmitter when the workpiece to be machined is carried by the ejector pin mechanism. A sputtering apparatus, characterized in that it is used to move the workpiece below the workpiece, so that the microwave transmitter can heat the workpiece by emitting microwaves toward the workpiece. According to claim 1,
The reaction chamber is
a sputtering chamber having a target and a sputtering mechanism installed at the top thereof to perform a sputtering process on the workpiece to be machined; and
and a receiving chamber located below the sputtering chamber, wherein the microwave heating mechanism is installed in the receiving chamber, and is used to perform a reflux process on the workpiece to be machined, and between the receiving chamber and the sputtering chamber. is provided with a through hole for communicating with each other, the base is installed in the receiving chamber and corresponds to the through hole, and the base is elevating, characterized in that it can move between the sputtering chamber and the receiving chamber through the through hole sputtering device. 3. The method of claim 2,
The sputtering mechanism is
a magnetron installed on the rear surface of the target; and
A sputtering apparatus connected to the target and comprising a DC power source used to apply a bias to the target. According to claim 1,
wherein the ejector pin mechanism is liftable, the ejector pin mechanism is fixed relative to the base and does not move, the ejector pin mechanism includes a plurality of ejector pins, the plurality of ejector pins are installed through the base, or Sputtering apparatus, characterized in that installed below the base. 5. The method of claim 4,
The plurality of ejector pins are sputtering apparatus, characterized in that made of a material capable of absorbing microwaves. 6. The method of claim 5,
The material capable of absorbing the microwaves includes a ceramic sputtering device. The method of claim 1,
The mobile unit is
a rotary arm installed vertically in the reaction chamber, located on one side of the base, and capable of rotating about an axis; and
and a transfer arm connected to the rotary arm, wherein the microwave transmitter is installed on the transfer arm. 8. The method of claim 7,
An electrical lead of the microwave transmitter is drawn out of the reaction chamber through the rotating arm. 8. The method of claim 7,
The transfer arm is manufactured by adopting a metal material, a cooling device is further installed on the transfer arm, and is used to cool the microwave transmitter. 10. The method of claim 9,
The cooling device includes a cooling water channel installed in the conveying arm, the cooling water channel including an inlet pipe, a cooling pipe, and a water outlet pipe, the inlet pipe and the water outlet pipe being installed in the conveying arm, Both ends communicate with the inlet pipe and the water outlet pipe, respectively, and the cooling pipe is spirally wound on the microwave transmitter.

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