SG11202006977QA - Shutter disk assembly, semiconductor processing device and method - Google Patents

Shutter disk assembly, semiconductor processing device and method

Info

Publication number
SG11202006977QA
SG11202006977QA SG11202006977QA SG11202006977QA SG11202006977QA SG 11202006977Q A SG11202006977Q A SG 11202006977QA SG 11202006977Q A SG11202006977Q A SG 11202006977QA SG 11202006977Q A SG11202006977Q A SG 11202006977QA SG 11202006977Q A SG11202006977Q A SG 11202006977QA
Authority
SG
Singapore
Prior art keywords
processing device
semiconductor processing
disk assembly
shutter disk
shutter
Prior art date
Application number
SG11202006977QA
Inventor
Dongdong Li
Hao Guo
Mengxin Zhao
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11202006977QA publication Critical patent/SG11202006977QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
SG11202006977QA 2018-01-29 2018-11-27 Shutter disk assembly, semiconductor processing device and method SG11202006977QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810085194.8A CN108060406B (en) 2018-01-29 2018-01-29 Shielding platen assembly, semiconductor processing apparatus and method
PCT/CN2018/117701 WO2019144696A1 (en) 2018-01-29 2018-11-27 Shielding plate assembly and semiconductor processing apparatus and method

Publications (1)

Publication Number Publication Date
SG11202006977QA true SG11202006977QA (en) 2020-08-28

Family

ID=62134274

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202006977QA SG11202006977QA (en) 2018-01-29 2018-11-27 Shutter disk assembly, semiconductor processing device and method

Country Status (6)

Country Link
JP (1) JP7139454B2 (en)
KR (1) KR102442541B1 (en)
CN (1) CN108060406B (en)
SG (1) SG11202006977QA (en)
TW (1) TWI752283B (en)
WO (1) WO2019144696A1 (en)

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* Cited by examiner, † Cited by third party
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CN108060406B (en) * 2018-01-29 2023-09-08 北京北方华创微电子装备有限公司 Shielding platen assembly, semiconductor processing apparatus and method
KR20220087552A (en) * 2019-10-28 2022-06-24 어플라이드 머티어리얼스, 인코포레이티드 Idle shield, deposition apparatus, deposition system, and methods of assembly and operation
CN111627839A (en) * 2020-06-04 2020-09-04 厦门通富微电子有限公司 Limiting device for baking tray, baking tray and semiconductor processing equipment
CN112011774B (en) * 2020-08-25 2022-09-16 北京北方华创微电子装备有限公司 Semiconductor equipment, semiconductor chamber thereof and semiconductor cooling method
CN112331609B (en) * 2020-10-26 2023-12-22 北京北方华创微电子装备有限公司 Heating base in semiconductor process equipment and semiconductor process equipment
CN113322440B (en) * 2021-05-26 2022-08-16 北京北方华创微电子装备有限公司 Semiconductor processing equipment and process chamber thereof
CN114959600B (en) * 2022-05-31 2023-08-18 北京北方华创微电子装备有限公司 Process chamber and semiconductor process equipment

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US5632673A (en) * 1995-10-30 1997-05-27 Chrysler Corporation Ventilation system for lightweight automobile
JP3905584B2 (en) * 1996-10-07 2007-04-18 アプライド マテリアルズ インコーポレイテッド Sputtering apparatus and collimator deposit processing method
JP4902052B2 (en) * 2001-04-05 2012-03-21 キヤノンアネルバ株式会社 Sputtering equipment
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TWI431668B (en) * 2009-06-24 2014-03-21 Ulvac Inc Vacuum deposition apparatus and method of detecting position of shutter board in vacuum deposition apparatus
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CN108060406B (en) * 2018-01-29 2023-09-08 北京北方华创微电子装备有限公司 Shielding platen assembly, semiconductor processing apparatus and method

Also Published As

Publication number Publication date
JP7139454B2 (en) 2022-09-20
TWI752283B (en) 2022-01-11
JP2021512224A (en) 2021-05-13
TW201933442A (en) 2019-08-16
KR102442541B1 (en) 2022-09-13
CN108060406A (en) 2018-05-22
WO2019144696A1 (en) 2019-08-01
KR20200096985A (en) 2020-08-14
CN108060406B (en) 2023-09-08

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