CN114959600B - Process chamber and semiconductor process equipment - Google Patents
Process chamber and semiconductor process equipment Download PDFInfo
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- CN114959600B CN114959600B CN202210614609.2A CN202210614609A CN114959600B CN 114959600 B CN114959600 B CN 114959600B CN 202210614609 A CN202210614609 A CN 202210614609A CN 114959600 B CN114959600 B CN 114959600B
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- electrostatic chuck
- baffle
- elastic conductive
- process chamber
- thimble
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a process chamber and semiconductor process equipment, wherein a thimble device is positioned below an electrostatic chuck and comprises a plurality of liftable thimbles penetrating through the electrostatic chuck, and the thimble device is used for jacking a baffle structure from the electrostatic chuck; the thimble is grounded; the bracket device comprises a bracket and a driving device, wherein the bracket is used for bearing the baffle structure; the driving device is used for driving the bracket to move to or from the upper part of the electrostatic chuck; the baffle structure is provided with the elastic conductive part towards one side of the electrostatic chuck, and the elastic conductive part contacts with the upper surface of the electrostatic chuck when being placed on the electrostatic chuck, and is used for enabling the elastic conductive part, the thimble and the electrostatic chuck to form a discharge path conducting with electricity through elastic deformation in the process of jacking the elastic conductive part by the thimble so as to remove residual charges on the upper surface of the electrostatic chuck. The process chamber provided by the invention can ensure that the adsorption function of the electrostatic chuck can be normally used, and can also improve the production efficiency and the productivity.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a process chamber and semiconductor process equipment.
Background
Semiconductor processing equipment is widely used in the current process manufacturing in the fields of integrated circuits, solar cells, flat panel displays and the like. In current physical vapor deposition apparatus (Physical Vapor Deposition, PVD), an electrostatic chuck (Electrostatic Chuck, ESC) is typically used to achieve wafer holding during processing. The electrostatic chuck contains an adsorption electrode (made of metal), and the outside of the adsorption electrode is completely wrapped by a ceramic material. For coulomb type electrostatic chucks (volume resistivity)>10 14 Omega cm), because the ceramic material is an insulator, when its outside adsorbs static charge, the charge can't pass the ceramic material and be taken away by the electrode, therefore can remain on ceramic material surface in a large number, influence its adsorption capacity. For this reason, it is currently most commonly usedThe method comprises the steps of opening a chamber with an electrostatic chuck, wiping the surface of the electrostatic chuck by using dust-free cloth adhered with isopropyl alcohol (IPA) or deionized water (DI water), eliminating residual charges on the surface of the electrostatic chuck, and recovering the temperature of the chamber to be raised again after the completion of the cleaning, and continuing the process.
However, once the PVD process chamber is opened, a large amount of water molecules and gas molecules adhere to the inner wall of the chamber and the target, which may result in that the vacuum degree of the chamber cannot be directly recovered, and a multiplex process is required to recover the vacuum degree, which generally requires 12-48 hours. Therefore, although the residual charges on the surface of the electrostatic chuck can be eliminated by the method of wiping the electrostatic chuck through the cavity, the method takes too long, and seriously affects the productivity.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a process chamber and semiconductor process equipment, which can eliminate residual charges on the surface of an electrostatic chuck without opening a cavity, thereby ensuring that the adsorption function of the electrostatic chuck can be normally used, improving the production efficiency and improving the productivity.
The invention provides a process chamber for achieving the purpose, which comprises a chamber main body, and an electrostatic chuck, a thimble device, a bracket device and a baffle structure which are arranged in the chamber main body, wherein the thimble device is positioned below the electrostatic chuck and comprises a plurality of liftable thimbles penetrating through the electrostatic chuck, and is used for jacking the baffle structure from the electrostatic chuck; the thimble is grounded; the bracket device comprises a bracket and a driving device, wherein the bracket is used for bearing the baffle plate structure; the driving device is used for driving the bracket to move to or from the upper part of the electrostatic chuck;
the baffle structure is provided with an elastic conductive part facing one side of the electrostatic chuck, the elastic conductive part is contacted with the upper surface of the electrostatic chuck when being placed on the electrostatic chuck, and the baffle structure is used for enabling the elastic conductive part, the thimble and the electrostatic chuck to form a discharge passage electrically conducted with electricity through elastic deformation in the process of jacking the elastic conductive part by the thimble so as to remove residual charges on the upper surface of the electrostatic chuck.
Optionally, the baffle structure comprises an upper baffle and a lower baffle, and the upper baffle and the lower baffle are oppositely arranged and fixedly connected; a heat insulation gap is arranged between the upper baffle plate and the lower baffle plate; the elastic conductive component is arranged on one side of the lower baffle plate, which is close to the electrostatic chuck.
Optionally, a groove is provided on a surface of the lower baffle plate facing the electrostatic chuck side, the elastic conductive member is provided in the groove, and a surface of the elastic conductive member facing the electrostatic chuck side is protruded with respect to a surface of the lower baffle plate facing the electrostatic chuck side.
Optionally, a difference in height between a surface of the elastic conductive member facing the electrostatic chuck side and a surface of the lower barrier facing the electrostatic chuck side is 10 μm or more and 200 μm or less.
Optionally, the baffle structure further comprises a fastening screw; the bottom surface of the groove is provided with a counter bore penetrating along the thickness direction of the lower baffle plate, the upper baffle plate is correspondingly provided with a threaded hole, and the fastening screw penetrates through the counter bore from bottom to top and is in threaded connection with the threaded hole.
Optionally, the baffle structure further includes an intermediate baffle, the intermediate baffles are all located between the upper baffle and the lower baffle, and the upper baffle, the intermediate baffle and the lower baffle are fixedly connected;
at least one of the upper baffle and the intermediate baffle and the lower baffle and the intermediate baffle has an insulating gap therebetween.
Optionally, the number of the intermediate baffles is one or more, and when the number of the intermediate baffles is multiple, at least one of the upper baffle and the intermediate baffle adjacent thereto, the lower baffle and the intermediate baffle adjacent thereto, and the two intermediate baffles adjacent thereto has a heat insulation gap.
Optionally, an optionalThe elastic conductive member has a resistivity of 1×10 or less 6 Ω.cm。
Optionally, the thickness of the elastic conductive component is greater than or equal to 0.1mm.
Optionally, the elastic conductive member comprises conductive rubber.
As another technical scheme, the invention also provides a semiconductor process device, which comprises the process chamber provided by the invention.
The invention has the following beneficial effects:
according to the process chamber provided by the invention, the baffle plate structure is used for shielding the electrostatic chuck by being placed on the electrostatic chuck when a warming-up process is carried out, so that target particles are prevented from being sputtered onto the electrostatic chuck, and meanwhile, the baffle plate structure is used for eliminating residual charges on the surface of the electrostatic chuck.
The semiconductor process equipment provided by the invention can eliminate the residual charge on the surface of the electrostatic chuck without opening a cavity by adopting the process chamber provided by the invention, so that the adsorption function of the electrostatic chuck can be ensured to be normally used, the production efficiency can be improved, and the productivity can be improved.
Drawings
FIG. 1 is a state diagram of a conventional baffle plate positioned above an electrostatic chuck;
FIG. 2 is a state diagram of a conventional shutter removed from above an electrostatic chuck;
FIG. 3A is a block diagram of a process chamber according to a first embodiment of the present invention;
FIG. 3B is a cross-sectional view of a baffle structure employed in the first embodiment of the present invention;
FIG. 4A is a cross-sectional view of a baffle structure employed in a second embodiment of the present invention;
FIG. 4B is an enlarged view of region I of FIG. 4A;
FIG. 5 is a cross-sectional view of a lower baffle plate employed in a second embodiment of the present invention;
FIG. 6 is a block diagram of a process chamber according to a second embodiment of the present invention;
FIG. 7 is a diagram showing the relationship between the baffle structure and the electrostatic chuck according to a second embodiment of the present invention;
FIG. 8 is a cross-sectional view of a baffle structure employed in a third embodiment of the present invention;
fig. 9 is another cross-sectional view of a baffle structure employed in a third embodiment of the present invention.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the present invention, the process chamber and the semiconductor process equipment provided by the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1 and 2 together, a physical vapor deposition (Physical Vapor Deposition, PVD) process refers to a process of depositing a metal film by a physical method. In the PVD process, a process gas including an inert gas and a reactive gas is supplied into the process chamber 1, and a direct current or radio frequency power is applied to a target (not shown) to excite and form a plasma to bombard the target, and target particles sputtered by the bombardment fall on the surface of the wafer to form a thin film. The process chamber 1 needs to be kept in a vacuum state all the time, and only when the target or the process component is replaced, the target or the process component can be opened, and the process chamber 1 is restored after the replacement is completed. However, the target exposed to the atmosphere reacts with the atmosphere, and the surface thereof is oxidized. Therefore, at the initial stage of chamber recovery, the surface of the target is defective and cannot be directly used for normal processes. Conventionally, the electrostatic chuck 2 is covered by a baffle plate (damper Disk) 03, as shown in fig. 1, the baffle plate 03 is driven by a bracket 4 to move above the electrostatic chuck 2, and then a warm-up (Burn in) process is performed to etch the defect part on the target surface, so that the defect part is sputtered and falls on the baffle plate 03. After the defective portion is sputtered off, as shown in fig. 2, the shutter 03 is moved away from above the electrostatic chuck 2 by the driving of the carrier 4, and a normal process can be performed.
In the PVD process, the wafer temperature needs to be controlled within a certain range using the electrostatic chuck 2 to stably maintain the process temperature of the wafer until the deposition process is completely finished. If the coulomb type electrostatic chuck is used, residual charges brought by the wafer can be gradually accumulated on the surface of the electrostatic chuck, the electrical state of the electrostatic chuck is damaged, the adsorption force of the electrostatic chuck to the wafer is abnormal, the adsorption force is negligence or negligence, the gas pressure between the electrostatic chuck and the wafer is unstable, the heat transfer effect between the electrostatic chuck and the wafer is uncontrollable, and even the wafer can be blown off. In this regard, the most commonly used method is to open the chamber with the electrostatic chuck, wipe the surface of the electrostatic chuck with a dust-free cloth with isopropyl alcohol (IPA) or deionized water (DI water), so as to remove the residual charge on the surface of the electrostatic chuck, and after completion, resume the temperature of the chamber to be raised again, and continue the process.
However, once the PVD process chamber is opened, a large amount of water molecules and gas molecules adhere to the inner wall of the chamber and the target, which may result in that the vacuum degree of the chamber cannot be directly recovered, and a multiplex process is required to recover the vacuum degree, which generally requires 12-48 hours. Therefore, although the residual charges on the surface of the electrostatic chuck can be eliminated by the method of wiping the electrostatic chuck through the cavity, the method takes too long, and seriously affects the productivity.
First embodiment
In order to solve the above-mentioned technical problems, please refer to fig. 3A and 3B together, a first embodiment of the present invention provides a process chamber 1, which adopts, for example, the structure of the process chamber 1 shown in fig. 1 and 2 (except for the baffle plate 03), specifically, the process chamber 1 includes a chamber body and an electrostatic chuck 2, a thimble device, a bracket device and a baffle plate structure 3 disposed in the chamber body, wherein the bracket device includes a bracket and a driving device, the bracket adopts, for example, the structure of the bracket 4 shown in fig. 1 and 2, and the bracket is used for carrying the baffle plate structure 3; the driving means are used to drive the carriage to move over the electrostatic chuck 2 or to move away from over the electrostatic chuck 2. The thimble device is located below the electrostatic chuck 2 and comprises a plurality of liftable thimbles 51 penetrating through the electrostatic chuck 2, and is used for jacking the baffle plate structure 3 from the electrostatic chuck 2, and the thimbles 51 are grounded. Optionally, a plurality of through holes 21 are formed in the electrostatic chuck 2 along a circumferential direction thereof at intervals, a plurality of liftable ejector pins 51 correspondingly penetrate through the plurality of through holes 21, and each ejector pin 51 is connected with a lifting support 52 located below the electrostatic chuck 2 and is used for lifting under the driving of the lifting support 52 so as to jack up the baffle structure 3 from the electrostatic chuck 2, thereby realizing the transfer of the baffle structure 3 from the bracket to the electrostatic chuck 2 or from the electrostatic chuck 2 to the bracket.
The process chamber 1 is applied to a PVD apparatus, for example, and when a warm-up process (Burn in) is performed, the baffle structure 3 may be placed on the electrostatic chuck 2 to shield the electrostatic chuck 2, so as to prevent target particles from being sputtered onto the electrostatic chuck 2, that is, the baffle structure 3 may replace the baffle 03 in fig. 1 and 2, and move to above the electrostatic chuck 2 under the drive of the bracket 4 when the warm-up process is performed, so as to shield the electrostatic chuck 2. The shutter structure 3 is used for shielding the electrostatic chuck 2 and also for eliminating residual charges on the surface of the electrostatic chuck 2.
Specifically, as shown in fig. 3A and 3B, the baffle structure 3 is, for example, plate-shaped, and optionally, the outer diameter of the baffle structure 3 is larger than the outer diameter of the electrostatic chuck 2, so as to ensure that the upper surface of the electrostatic chuck 2 can be completely shielded. The baffle structure 3 is provided with an elastic conductive member 33 on a side facing the electrostatic chuck 2, and the elastic conductive member 33 contacts with the upper surface of the electrostatic chuck 2 when placed on the electrostatic chuck 2, so that the elastic conductive member 33, the ejector pins 51 and the electrostatic chuck 2 form a discharge path electrically conducted with ground electricity by elastic deformation during the process of ejecting the elastic conductive member 33 by the ejector pins 51, so as to remove residual charges on the upper surface of the electrostatic chuck 2.
The elastic conductive member 33 is closely contacted with the upper surface of the electrostatic chuck 2 by the gravity of the barrier structure 3 when placed on the electrostatic chuck 2. The ejector pins 51 are grounded, for example, by a lift bracket 52 (e.g., in electrical communication with the chamber wall). In this way, in the process that the grounded thimble 51 jacks up the elastic conductive component 33, the elastic conductive component 33 is not separated from the upper surface of the electrostatic chuck 2 immediately due to elastic deformation, and can still keep contact within a certain time, in this time, the elastic conductive component 33, the thimble 51 and the electrostatic chuck 2 form a discharge path conducting with ground, at the moment, residual charges on the surface of the electrostatic chuck 2 can flow from the elastic conductive component 33 to the thimble 51 and then to the ground potential, so that the residual charges on the upper surface of the electrostatic chuck can be removed, a cavity is not needed, the time consumption is short, the adsorption function of the electrostatic chuck can be guaranteed to be normally used, the production efficiency can be improved, and the productivity can be improved.
In some alternative embodiments, the resistivity of the elastic conductive member 33 is 1×10 or less 6 Omega cm. This ensures that the conductive properties of the resilient conductive member 33 are sufficient to remove residual charge from the upper surface of the electrostatic chuck.
In some alternative embodiments, the resilient conductive member 33 comprises a conductive rubber.
In some alternative embodiments, the thickness of the elastic conductive element 33 is greater than or equal to 0.1mm. This ensures that the elastic conductive member 33 is sufficiently deformed when being lifted by the ejector pins 51 so as not to be immediately separated from the upper surface of the electrostatic chuck 2, and still be kept in contact for a certain period of time.
In some alternative embodiments, as shown in fig. 3B, a groove is provided on the surface of the baffle structure 3 facing the electrostatic chuck 2, the elastic conductive member 33 is provided in the groove, and the surface of the elastic conductive member 33 facing the electrostatic chuck 2 is protruded with respect to the surface of the baffle structure 3 facing the electrostatic chuck 2, that is, a portion of the elastic conductive member 33 is located outside the groove, so that the elastic conductive member 33 can be ensured to be in close contact with the electrostatic chuck 2, and thus the electrical conduction effect of the two can be ensured.
In some alternative embodiments, the elastic conductive member 33 is bonded to the bottom surface of the baffle structure 3 (or its recess) by an inorganic glue. Optionally, after the inorganic glue is solidified, the inorganic glue can be baked to reduce the air release rate of the inorganic glue. For example, the inorganic glue may be baked using a process chamber, the baking temperature may be 50 ℃ to 200 ℃, and the baking time may be more than 2 hours.
Second embodiment
Referring to fig. 4A to 7, a second embodiment of the present invention provides a process chamber, which is an improvement of the first embodiment. Specifically, as shown in fig. 4A and 4B, the barrier structure 3 includes an upper barrier 31 and a lower barrier 32, the upper barrier 31 and the lower barrier 32 being disposed opposite to each other and fixedly connected, and a heat insulation gap D being provided between the upper barrier 31 and the lower barrier 32. The heat insulation gap D may be a microscopic gap, that is, in the case where the upper and lower baffles 31 and 32 are stacked on each other, since the lower surface of the upper baffle 31 and the upper surface of the lower baffle 32 are not absolute planes, there may be a microscopic gap therebetween, and since the baffle structure 3 is used in the vacuum process chamber 1, the microscopic gap may play a role of vacuum heat insulation between the upper and lower baffles 31 and 32 under a vacuum environment, avoiding an excessively high temperature of the lower baffle 32. Experiments show that when the warming-up process is performed in a vacuum environment, the temperature of the lower baffle plate 32 is far lower than that of the upper baffle plate 31, so that the elastic conductive component 33 on the lower baffle plate 32 can be ensured not to be damaged due to overhigh temperature. In other words, under a vacuum environment, vacuum insulation can be achieved even if the upper barrier 31 and the lower barrier 32 are overlapped with each other. However, the present invention is not limited thereto, and in practical applications, the upper baffle plate 31 and the lower baffle plate 32 may be spaced apart from each other to form the heat insulation gap D, and specifically, a spacer or a heat insulation layer may be disposed between the upper baffle plate 31 and the lower baffle plate 32 to realize the spaced arrangement therebetween according to different process environments and process requirements.
The side of the lower barrier 32 facing the electrostatic chuck 2 is provided with an elastic conductive member 33, and as shown in fig. 6 and 7, the elastic conductive member 33 is closely contacted with the upper surface of the electrostatic chuck 2 by the gravity of the upper barrier 31 and the lower barrier 32 when placed on the electrostatic chuck 2. The ejector pins 51 are grounded, for example, by a lift bracket 52 (e.g., in electrical communication with the chamber wall). In this way, in the process that the grounded thimble 51 jacks up the elastic conductive component 33, the elastic conductive component 33 is not separated from the upper surface of the electrostatic chuck 2 immediately due to elastic deformation, and can still keep contact within a certain time, in this time, the elastic conductive component 33, the thimble 51 and the electrostatic chuck 2 form a discharge path conducting with ground, at the moment, residual charges on the surface of the electrostatic chuck 2 can flow from the elastic conductive component 33 to the thimble 51 and then to the ground potential, so that the residual charges on the upper surface of the electrostatic chuck can be removed, a cavity is not needed, the time consumption is short, the adsorption function of the electrostatic chuck can be guaranteed to be normally used, the production efficiency can be improved, and the productivity can be improved.
In some alternative embodiments, as shown in fig. 4B and 5, a groove 321 is provided on a surface of the lower barrier 32 facing the electrostatic chuck 2 side, the elastic conductive member 33 is provided in the groove 321, and a surface of the elastic conductive member 33 facing the electrostatic chuck 2 side is protruded with respect to a surface of the lower barrier 32 facing the electrostatic chuck 2 side, that is, a portion of the elastic conductive member 33 is located outside the groove 321, and as shown in fig. 4B, a depth H3 of the groove 321 is smaller than a thickness H2 of the elastic conductive member 33 in an initial state. In this way, the elastic conductive member 33 can be ensured to be in close contact with the electrostatic chuck 2, so that the electrical conduction effect of both can be ensured.
In some alternative embodiments, as shown in fig. 7, a height difference H1 between a surface of the elastic conductive member 33 on the side facing the electrostatic chuck 2 and a surface of the lower baffle 32 on the side facing the electrostatic chuck 2 is 10 μm or more and 200 μm or less. In this way, it is possible to avoid the elastic conductive member 33 from being unable to be in close contact with the electrostatic chuck 2 due to too small height difference H1, and to avoid the gap H1 'between the lower surface of the lower baffle 32 and the upper surface of the electrostatic chuck 2 from being too large due to too large height difference H1, so that the target particles enter the gap H1' to damage the elastic conductive member 33 when the warm-up process is performed. It is easy to understand that the height difference H1 is the dimension of the elastic conductive member 33 in the original state, and when the elastic conductive member 33 is placed on the electrostatic chuck 2, the elastic conductive member 33 may be compressed by the gravity of the upper barrier 31 and the lower barrier 32, and the above-mentioned gap H1' is smaller than the height difference H1.
In some alternative embodiments, the elastic conductive member 33 is bonded to the bottom surface of the groove 321 by an inorganic adhesive. Optionally, after the inorganic glue is solidified, the inorganic glue can be baked to reduce the air release rate of the inorganic glue. For example, the inorganic glue may be baked using a process chamber, the baking temperature may be 50 ℃ to 200 ℃, and the baking time may be more than 2 hours.
In some alternative embodiments, as shown in fig. 7, the diameters of the peripheral walls of the upper baffle plate 31 and the lower baffle plate 32 are larger than the diameter of the peripheral wall of the electrostatic chuck 2, that is, the peripheral walls of the upper baffle plate 31 and the lower baffle plate 32 and the peripheral wall of the electrostatic chuck 2 have a radial interval B1 therebetween, so that the upper baffle plate 31 and the lower baffle plate 32 can be ensured to completely shield the electrostatic chuck 2 to avoid sputtering of target particles onto the electrostatic chuck 2. Optionally, the diameter of the outer peripheral wall of the elastic conductive member 33 is smaller than the diameter of the outer peripheral wall of the electrostatic chuck 2, that is, the outer peripheral wall of the elastic conductive member 33 and the outer peripheral wall of the electrostatic chuck 2 have a radial distance B2 therebetween, so that the lower surface of the elastic conductive member 33 is prevented from being exposed to the plasma environment, and thus, during the warming-up process, sputtering of the target particles onto the elastic conductive member 33 and damage of the elastic conductive member 33 can be prevented.
The upper baffle 31 and the lower baffle 32 may be fixedly connected in a variety of ways, and in some alternative embodiments, as shown in fig. 4A and 4B, the baffle structure 3 further includes a fastening screw 34; a counter bore 322 penetrating in the thickness direction of the lower baffle plate 32 is provided on the bottom surface of the groove 321, and a threaded hole fastening screw 34 is correspondingly provided in the upper baffle plate 31 to pass through the counter bore 322 from bottom to top and be in threaded connection with the threaded hole in the upper baffle plate 31. Optionally, the fastening screws 34 are plural and spaced apart along the circumference of the lower baffle 32. Of course, in practical applications, the upper baffle 31 and the lower baffle 32 may be fixedly connected by any other means, and the invention is not particularly limited thereto.
Third embodiment
The third embodiment of the present invention provides a process chamber, which is an improvement of the second embodiment, specifically, as shown in fig. 8 and 9, the baffle structure 3' includes an upper baffle 31 and a lower baffle 32, and further includes an intermediate baffle 35, where the intermediate baffle 35 is located between the upper baffle 31 and the lower baffle 32, and the upper baffle 31, the intermediate baffle 35 and the lower baffle 32 are fixedly connected; at least one of the upper baffle 31 and the intermediate baffle 35 and the lower baffle and the intermediate baffle 35 has the above-described heat insulation gap. The heat insulating gap may be a microscopic gap existing between two adjacent baffles (including the upper baffle 31, the intermediate baffle 35, and the lower baffle 32) when the two baffles are stacked on each other, or may be a heat insulating gap formed by spacing the two adjacent baffles.
By means of the intermediate baffle 35, the temperature of the lower baffle 32 can be further reduced, ensuring that the elastic conductive members 33 on the lower baffle 32 are not damaged by excessive temperatures.
In some alternative embodiments, the intermediate baffles 35 may be one or more, such as 3 intermediate baffles 35 shown in fig. 8 and 9. In practical applications, the number of intermediate baffles 35 may be set according to specific needs, and the present invention is not particularly limited in the manner in which the upper baffle 31, the intermediate baffle 35, and the lower baffle 32 are fixedly connected, for example, the upper baffle 31, the intermediate baffle 35, and the lower baffle 32 may be screwed by fastening screws 34.
When the number of intermediate baffles 35 is plural, at least one of the upper baffle 31 and the intermediate baffle 35 adjacent thereto, the lower baffle 32 and the intermediate baffle 35 adjacent thereto, and the two intermediate baffles 35 adjacent thereto has the above-described heat insulation gap. That is, at least one heat insulation gap may be formed in all of the baffles including the upper baffle 31, the middle baffle 35, and the lower baffle 32. For example, as shown in fig. 8, the above-mentioned heat insulation gaps are provided between the upper baffle 31 and the intermediate baffle 35 adjacent thereto, between the lower baffle 32 and the intermediate baffle 35 adjacent thereto, and between each adjacent two of the intermediate baffles 35. As another example, as shown in fig. 9, an insulating gap is provided between the upper baffle 31 and the intermediate baffle 35 adjacent thereto; a heat insulation gap is arranged between the lower baffle 32 and the middle baffle 35 adjacent to the lower baffle; a heat insulation gap is arranged between the middle baffle 35 at the lowest layer and the middle baffle 35 adjacent to the middle baffle; there is no thermal insulation gap between the uppermost intermediate baffle 35 and the intermediate baffle 35 adjacent thereto. By "without insulating gap" is meant that the two baffles are integrally joined or joined together by means of brazing, adhesive or diffusion welding, etc. In practical applications, the number and location of the insulation gaps may be set as desired.
In summary, in the process chamber provided in the foregoing embodiments of the present invention, the baffle structure is used to shield the electrostatic chuck by being placed on the electrostatic chuck when performing the warmup process, so as to prevent the target particles from being sputtered onto the electrostatic chuck, and meanwhile, the baffle structure is also used to eliminate the residual charges on the surface of the electrostatic chuck.
As another technical solution, an embodiment of the present invention further provides a semiconductor process apparatus, where the semiconductor process apparatus includes the process chamber provided in each of the foregoing embodiments of the present invention.
The semiconductor process equipment provided by the embodiment of the invention can eliminate the residual charges on the surface of the electrostatic chuck without opening a cavity by adopting the process chamber provided by the embodiments of the invention, thereby ensuring that the adsorption function of the electrostatic chuck can be normally used, improving the production efficiency and improving the productivity.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (11)
1. The process chamber is characterized by comprising a chamber main body, and an electrostatic chuck, a thimble device, a bracket device and a baffle structure which are arranged in the chamber main body, wherein the thimble device is positioned below the electrostatic chuck and comprises a plurality of liftable thimbles which are arranged in the electrostatic chuck in a penetrating way and used for jacking the baffle structure from the electrostatic chuck; the thimble is grounded; the bracket device comprises a bracket and a driving device, wherein the bracket is used for bearing the baffle plate structure; the driving device is used for driving the bracket to move to or from the upper part of the electrostatic chuck;
the baffle structure is provided with an elastic conductive part facing one side of the electrostatic chuck, the elastic conductive part is contacted with the upper surface of the electrostatic chuck when being placed on the electrostatic chuck, and the baffle structure is used for enabling the elastic conductive part, the thimble and the electrostatic chuck to form a discharge passage electrically conducted with electricity through elastic deformation in the process of jacking the elastic conductive part by the thimble so as to remove residual charges on the upper surface of the electrostatic chuck.
2. The process chamber of claim 1, wherein the baffle structure comprises an upper baffle and a lower baffle, the upper baffle and the lower baffle being disposed opposite and fixedly connected; a heat insulation gap is arranged between the upper baffle plate and the lower baffle plate; the elastic conductive component is arranged on one side of the lower baffle plate, which faces the electrostatic chuck.
3. The process chamber of claim 2, wherein a groove is provided on a surface of the lower baffle plate facing the electrostatic chuck side, the elastic conductive member is provided in the groove, and a surface of the elastic conductive member facing the electrostatic chuck side is protruded with respect to a surface of the lower baffle plate facing the electrostatic chuck side.
4. The process chamber of claim 3, wherein a difference in height between a surface of the elastic conductive member facing the electrostatic chuck side and a surface of the lower baffle plate facing the electrostatic chuck side is 10 μm or more and 200 μm or less.
5. The process chamber of claim 3, wherein the baffle structure further comprises a fastening screw; the bottom surface of the groove is provided with a counter bore penetrating along the thickness direction of the lower baffle plate, the upper baffle plate is correspondingly provided with a threaded hole, and the fastening screw penetrates through the counter bore from bottom to top and is in threaded connection with the threaded hole.
6. The process chamber of any one of claims 2 to 4, wherein the baffle structure further comprises an intermediate baffle, the intermediate baffles are each positioned between the upper baffle and the lower baffle, and the upper baffle, the intermediate baffle, and the lower baffle are fixedly connected;
at least one of the upper baffle and the intermediate baffle and the lower baffle and the intermediate baffle has an insulating gap therebetween.
7. The process chamber of claim 6, wherein the intermediate baffles are one or more, and when the intermediate baffles are a plurality, at least one of the upper baffle and the intermediate baffle adjacent thereto, the lower baffle and the intermediate baffle adjacent thereto, and the intermediate baffle adjacent thereto has an insulating gap.
8. The process chamber of claim 1, wherein the resilient conductive memberResistivity of 1X 10 or less 6 Ω.cm。
9. The process chamber of claim 1, wherein the elastic conductive member has a thickness of 0.1mm or greater.
10. The process chamber of claim 1, wherein the resilient conductive member comprises conductive rubber.
11. A semiconductor processing apparatus comprising a process chamber according to any one of claims 1-10.
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0742588A2 (en) * | 1995-05-11 | 1996-11-13 | Applied Materials, Inc. | Method of protecting electrostatic chuck |
| CN1706026A (en) * | 2002-10-23 | 2005-12-07 | 艾克塞利斯技术公司 | Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging |
| CN101383309A (en) * | 2007-09-06 | 2009-03-11 | 上海华虹Nec电子有限公司 | Silicon wafer thimble |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
| CN102110629A (en) * | 2009-12-23 | 2011-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic clamping device, method for reducing residual charge and plasma processing equipment |
| CN103173730A (en) * | 2011-12-23 | 2013-06-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering apparatus and process |
| CN105448793A (en) * | 2014-06-12 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment |
| CN106571284A (en) * | 2015-10-09 | 2017-04-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc system, reaction chamber and semiconductor processing device |
| CN108060406A (en) * | 2018-01-29 | 2018-05-22 | 北京北方华创微电子装备有限公司 | Block platen component, semiconductor processing and method |
| CN109003921A (en) * | 2018-08-01 | 2018-12-14 | 德淮半导体有限公司 | Process equipment and its working method |
| CN110468389A (en) * | 2018-05-10 | 2019-11-19 | 三星电子株式会社 | Depositing device |
| CN110581099A (en) * | 2018-06-07 | 2019-12-17 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and process chamber |
| CN112331588A (en) * | 2020-10-26 | 2021-02-05 | 北京北方华创微电子装备有限公司 | Chuck assembly in semiconductor equipment and semiconductor processing equipment |
| CN113675127A (en) * | 2020-05-15 | 2021-11-19 | 细美事有限公司 | Electrostatic chuck, substrate processing apparatus, and substrate processing method |
| CN114220758A (en) * | 2021-11-29 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Wafer bearing device and process chamber |
-
2022
- 2022-05-31 CN CN202210614609.2A patent/CN114959600B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0742588A2 (en) * | 1995-05-11 | 1996-11-13 | Applied Materials, Inc. | Method of protecting electrostatic chuck |
| CN1706026A (en) * | 2002-10-23 | 2005-12-07 | 艾克塞利斯技术公司 | Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging |
| CN101383309A (en) * | 2007-09-06 | 2009-03-11 | 上海华虹Nec电子有限公司 | Silicon wafer thimble |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
| CN102110629A (en) * | 2009-12-23 | 2011-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic clamping device, method for reducing residual charge and plasma processing equipment |
| CN103173730A (en) * | 2011-12-23 | 2013-06-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering apparatus and process |
| CN105448793A (en) * | 2014-06-12 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment |
| CN106571284A (en) * | 2015-10-09 | 2017-04-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc system, reaction chamber and semiconductor processing device |
| CN108060406A (en) * | 2018-01-29 | 2018-05-22 | 北京北方华创微电子装备有限公司 | Block platen component, semiconductor processing and method |
| CN110468389A (en) * | 2018-05-10 | 2019-11-19 | 三星电子株式会社 | Depositing device |
| CN110581099A (en) * | 2018-06-07 | 2019-12-17 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and process chamber |
| CN109003921A (en) * | 2018-08-01 | 2018-12-14 | 德淮半导体有限公司 | Process equipment and its working method |
| CN113675127A (en) * | 2020-05-15 | 2021-11-19 | 细美事有限公司 | Electrostatic chuck, substrate processing apparatus, and substrate processing method |
| CN112331588A (en) * | 2020-10-26 | 2021-02-05 | 北京北方华创微电子装备有限公司 | Chuck assembly in semiconductor equipment and semiconductor processing equipment |
| CN114220758A (en) * | 2021-11-29 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Wafer bearing device and process chamber |
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|---|---|
| CN114959600A (en) | 2022-08-30 |
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