CN101383309A - Silicon wafer thimble - Google Patents

Silicon wafer thimble Download PDF

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Publication number
CN101383309A
CN101383309A CNA2007100940695A CN200710094069A CN101383309A CN 101383309 A CN101383309 A CN 101383309A CN A2007100940695 A CNA2007100940695 A CN A2007100940695A CN 200710094069 A CN200710094069 A CN 200710094069A CN 101383309 A CN101383309 A CN 101383309A
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CN
China
Prior art keywords
silicon chip
silicon wafer
wafer thimble
contact site
thimble
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100940695A
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Chinese (zh)
Inventor
张东海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Hua Hong NEC Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Hua Hong NEC Electronics Co Ltd filed Critical Shanghai Hua Hong NEC Electronics Co Ltd
Priority to CNA2007100940695A priority Critical patent/CN101383309A/en
Publication of CN101383309A publication Critical patent/CN101383309A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses a top pin of a silicon chip, which comprises a contact part and a lifting part, wherein the contact part is provided with an elastic assembly and is embedded, sheathed or directly connected to the top of the lifting part by the elastic assembly. The elastic assembly can be formed by compression metal springs or deformable conductor elastic pieces and also can be realized by a gravity mode, and the like. The top pin of a silicon chip can effectively extend the releasing time of static charge on the surface of the silicon chip and prevent residual static electricity from bonding the silicon chip to generate a chip skipping phenomenon.

Description

Silicon wafer thimble
Technical field
The present invention relates to a kind of silicon wafer thimble.
Background technology
In semiconductor equipment especially dry etching, commonly used to silicon wafer thimble (wafer lift pin), its effect is except finishing conveyance, and Another important function is the static that discharges silicon chip (wafer) and silicon chip pedestal (stage) or electrostatic chuck (ESC) surface.If static discharges not exclusively before reclaiming silicon chip from the silicon chip pedestal, just still have absorption affinity between silicon chip and the silicon chip pedestal and exist, this moment, silicon chip will produce so-called " film dancing " phenomenon on the silicon chip pedestal, caused silicon chip fragmentation or equipment downtime.
Traditional silicon wafer thimble is the incompressible formula of rigidity, and contact silicon chip, release electrostatic lotus and three processes of jack-up silicon chip are almost carried out at one time.The time point that silicon wafer thimble rise contact silicon chip begins electrostatic discharge is exactly the time point that thimble begins the jack-up silicon chip, therefore the discharge time before silicon chip and the silicon chip base-separation is extremely short, still have remaining electrostatic force to be present between silicon chip and the silicon chip pedestal before easily causing silicon chip by jack-up, film dancing easily takes place.
Be the schematic diagram that traditional silicon wafer thimble is finished silicon chip conveyance process shown in Figure 1A to Fig. 1 C, Figure 1A is the schematic diagram before ground connection base 4 rises, and this moment, there was more remaining electrostatic charge 5 in silicon chip surface.Figure 1B is 4 risings of ground connection base and the schematic diagram that lifts silicon wafer thimble 1, behind the silicon wafer thimble 1 contact this moment silicon chip 2 with its jack-up and discharge a part of remaining electrostatic charge 5, but remaining electrostatic charge 5 is not released fully, and is still attractive between silicon chip and the electrostatic chuck 3.As Fig. 1 C, when silicon wafer thimble 1 continues to rise, the top power that silicon chip 2 is subjected to will be by jack-up during greater than the attraction of electric charge, but crooked at the attraction force acts lower silicon slice of remaining electrostatic charge 5, the film dancing phenomenon promptly occurs.
So how fully release electrostatic, the film dancing phenomenon when preventing silicon wafer thimble jack-up silicon chip are a present subject matter to be solved.
Summary of the invention
Technical problem to be solved by this invention provides a kind of silicon wafer thimble, and it can prolong the release time of silicon chip surface electrostatic charge, prevents remaining static " bonding die " and generation film dancing phenomenon.
In order to solve above technical problem, thereby need to prolong the discharge time of release electrostatic fully.The invention provides a kind of silicon wafer thimble, comprising: contact site, lifting unit, contact site has elastic parts; Contact site is embedded, overlaps if directly be connected the top of lifting unit by this elastic parts.
Because silicon wafer thimble of the present invention has compressible resilient contact structure in the direction of motion, when guaranteeing that silicon wafer thimble rises, in time period from the contact silicon chip to beginning jack-up silicon chip, contact with silicon chip and ground connection discharge simultaneously but jack-up silicon chip not always, up to silicon chip by the rigid structure jack-up of silicon wafer thimble.Thereby prevent remaining static bonding die and the film dancing phenomenon occurs.Can effectively improve utilization rate of equipment and installations, prevent that silicon chip is injured.
Elastic parts of the present invention can be realized the vary in length of silicon wafer thimble in its direction of motion, and it can be made up of the compressed metal spring, perhaps is made up of deformable conductor shell fragment, also can use gravity mode realization etc.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Figure 1A is the view of traditional silicon wafer thimble before the ground connection base rises;
Figure 1B is that traditional silicon wafer thimble is in ground connection base contact silicon wafer thimble view constantly;
View when Fig. 1 C is traditional silicon wafer thimble jack-up silicon chip;
Fig. 2 is a kind of structural representation of silicon wafer thimble of the present invention;
Fig. 3 is the mapped structure schematic diagram of silicon wafer thimble of the present invention;
Fig. 4 is the another mapped structure schematic diagram of silicon wafer thimble of the present invention;
Fig. 5 A is the view of the present invention before the ground connection base rises;
Fig. 5 B is that the present invention is in ground connection base contact silicon wafer thimble view constantly;
Fig. 5 C be the present invention before elastic parts compression jack-up silicon chip constantly schematic diagram;
View when Fig. 5 D is a silicon wafer thimble jack-up silicon chip of the present invention;
Fig. 6 is a cutaway view of the present invention;
Fig. 7 is the enlarged diagram of contact site among Fig. 6.
Embodiment
Be a kind of structural representation of silicon wafer thimble 6 of the present invention as shown in Figure 2, comprise: contact site 61 and lifting unit 62, wherein contact site 61 has a metal spring 611, and contact site 61 is embedded top at lifting unit 62 by this metal spring 611.
Fig. 5 A to Fig. 5 D is the process chart of silicon wafer thimble of the present invention.Fig. 5 A is the view before ground connection base 4 rises, and the contact site 61 of silicon wafer thimble 6 does not contact with silicon chip 2, and the metal spring 611 of its elastic parts is the nature extended configuration, and this moment, silicon chip 2 surfaces had a large amount of remaining electrostatic charges 5.4 risings of ground connection base contact with the lifting unit 62 of silicon wafer thimble 6 among Fig. 5 B, and promote the contact site 61 that silicon wafer thimble 6 rises to silicon wafer thimble 6 and contact with silicon chip 2, this moment silicon chip 2 pass through contact site 61 (containing metal spring 611), lifting unit 62 is connected the remaining electrostatic charge 5 of release with ground connection base 4.As Fig. 5 C, ground connection base 4 further rises, and metal spring 611 finishes until metal spring 611 compressions because the action of gravity of silicon chip 2 is compressed, and silicon chip 2 discharges remaining electrostatic charge 5 in the compression process always.Constantly, the remaining electrostatic charge 5 of silicon chip 2 has discharged and has finished shown in Fig. 5 D, and ground connection base 4 continues to promote silicon wafer thimble 1 and rises, and finally stably with silicon chip 3 jack-up, silicon chip 2 is not subjected to electric charge gravitation thereby the film dancing phenomenon can not takes place.
As shown in Figure 6, it is stepped that the contact site 61 of silicon wafer thimble 6 of the present invention can be convex, and lifting unit 62 tops have convex slot simultaneously.Fig. 7 is the zoomed-in view of contact site among Fig. 6, can not ejected lifting unit 62 when adopting this structure can make contact site 61 be embedded the elastic force that is subjected to metal spring 611 in convex slot.Contact site of the present invention in addition also can be set in the top of lifting unit by elastic parts, and its operation principle is identical with the mode of being embedded.
Silicon wafer thimble 6 of the present invention has compressible elastic parts in the direction of motion, when having guaranteed that silicon wafer thimble 6 rises, in time period from the contact silicon chip to beginning jack-up silicon chip, contact with silicon chip and ground connection discharge simultaneously but jack-up silicon chip not always, residual charge in silicon chip discharges fully, its gravity during less than the top power of silicon wafer thimble then by jack-up stably.So elastic parts makes the vary in length of silicon wafer thimble in its direction of motion.This elastic parts can also have following several conversion implementation except that the metal spring 611 that adopts above-mentioned routine:
Be a kind of silicon wafer thimble of elastic parts conversion as shown in Figure 3, contact site 61 adopts two electroconductive elastic sheets 612 directly to be connected the top of lifting unit 62 among the figure.Adopt this structure, electroconductive elastic sheet 612 is subjected to that the action of gravity of silicon chip is curved, and deformation takes place downwards when contact site 61 contacts with silicon chip, discharge the remaining electrostatic charge on the silicon chip simultaneously, discharge the gravity of the top power effect of elastic force after electroconductive elastic sheet 612 deformation that finish and lifting unit 62 greater than silicon chip to remaining electrostatic charge, then silicon chip is by jack-up stably.
Be the silicon wafer thimble of another kind of elastic parts conversion as shown in Figure 4, elastic parts comprises two fixed pulleys 6131, traction lead 6132, the weight 6133 that dangles among the figure.Adopt this structure, when contacting with silicon chip, contact site 61 is subjected to the action of gravity of silicon chip, the weight 6133 that dangles passes through fixed pulley 6131 to rising, whole contact site 61 shrinks downwards, not with silicon chip jack-up, silicon chip is connected with the ground connection base by contact site 61, earth lead 6134 and lifting unit 62 simultaneously, can discharge remaining electrostatic charge, and principle is identical with the operation principle of the silicon wafer thimble of metal spring structure.
The present invention increases elastic parts by the structure of several conversion in original silicon wafer thimble, thereby make silicon wafer thimble arrive in the time period of beginning jack-up silicon chip at the contact silicon chip, contact with silicon chip and ground connection discharge simultaneously but jack-up silicon chip not always,, effectively prevented remaining static bonding die and the film dancing phenomenon occurs by the rigid structure jack-up of silicon wafer thimble up to silicon chip.

Claims (5)

1, a kind of silicon wafer thimble is characterized in that, comprising:
Contact site, lifting unit, described contact site has elastic parts;
Described contact site is embedded, overlaps if directly be connected the top of described lifting unit by described elastic parts.
2, silicon wafer thimble as claimed in claim 1 is characterized in that, described elastic parts is a metal spring.
3, silicon wafer thimble as claimed in claim 1 is characterized in that, described elastic parts is the conductor shell fragment.
4, silicon wafer thimble as claimed in claim 1 is characterized in that, described elastic parts comprises two fixed pulleys, a traction lead and the weight that dangles; Described fixed pulley is separately fixed on the two side at described lifting unit top, and the described weight that dangles hangs on described two fixed pulleys by described traction lead.
5, silicon wafer thimble as claimed in claim 1 is characterized in that, it is stepped that described contact site top is convex, and described lifting unit top has convex slot, and described contact site is embedded in described convex slot by described elastic parts.
CNA2007100940695A 2007-09-06 2007-09-06 Silicon wafer thimble Pending CN101383309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2007100940695A CN101383309A (en) 2007-09-06 2007-09-06 Silicon wafer thimble

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2007100940695A CN101383309A (en) 2007-09-06 2007-09-06 Silicon wafer thimble

Publications (1)

Publication Number Publication Date
CN101383309A true CN101383309A (en) 2009-03-11

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024731A (en) * 2010-05-26 2011-04-20 沈阳芯源微电子设备有限公司 Slice-bearing table device with internal hoistable support column
CN103515280A (en) * 2012-06-18 2014-01-15 北京北方微电子基地设备工艺研究中心有限责任公司 Ejector pin device, lower electrode assembly, and assembly and disassembly methods of lower electrode assembly
CN103736590A (en) * 2014-01-13 2014-04-23 苏州巨联科技有限公司 Dioctyl phthalate recycling equipment
CN105097609A (en) * 2014-05-22 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 Thimble mechanism, reaction cavity and semiconductor processing apparatus
CN106252791A (en) * 2015-06-12 2016-12-21 睿励科学仪器(上海)有限公司 Silicon wafer sucking disc
CN107452666A (en) * 2016-05-27 2017-12-08 细美事有限公司 Push rod component and the naked core liftout attachment with the push rod component
CN111570301A (en) * 2019-02-15 2020-08-25 万润科技股份有限公司 Driving method, mechanism and module and sorting machine using driving mechanism and module
CN114959600A (en) * 2022-05-31 2022-08-30 北京北方华创微电子装备有限公司 Process chamber and semiconductor process equipment

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024731B (en) * 2010-05-26 2012-05-30 沈阳芯源微电子设备有限公司 Slice-bearing table device with internal hoistable support column
CN102024731A (en) * 2010-05-26 2011-04-20 沈阳芯源微电子设备有限公司 Slice-bearing table device with internal hoistable support column
CN103515280B (en) * 2012-06-18 2016-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 Push pin device, bottom electrode assembly and installation and removal method thereof
CN103515280A (en) * 2012-06-18 2014-01-15 北京北方微电子基地设备工艺研究中心有限责任公司 Ejector pin device, lower electrode assembly, and assembly and disassembly methods of lower electrode assembly
CN103736590B (en) * 2014-01-13 2016-08-17 苏州巨联科技有限公司 A kind of dioctyl ester reclaimer
CN103736590A (en) * 2014-01-13 2014-04-23 苏州巨联科技有限公司 Dioctyl phthalate recycling equipment
CN105097609A (en) * 2014-05-22 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 Thimble mechanism, reaction cavity and semiconductor processing apparatus
CN106252791A (en) * 2015-06-12 2016-12-21 睿励科学仪器(上海)有限公司 Silicon wafer sucking disc
CN106252791B (en) * 2015-06-12 2019-02-19 睿励科学仪器(上海)有限公司 Silicon wafer sucking disc
CN107452666A (en) * 2016-05-27 2017-12-08 细美事有限公司 Push rod component and the naked core liftout attachment with the push rod component
CN107452666B (en) * 2016-05-27 2020-10-23 细美事有限公司 Ejector rod assembly and bare core ejection device with ejector rod assembly
CN111570301A (en) * 2019-02-15 2020-08-25 万润科技股份有限公司 Driving method, mechanism and module and sorting machine using driving mechanism and module
CN111570301B (en) * 2019-02-15 2021-09-21 万润科技股份有限公司 Driving method, mechanism and module and sorting machine using driving mechanism and module
CN114959600A (en) * 2022-05-31 2022-08-30 北京北方华创微电子装备有限公司 Process chamber and semiconductor process equipment
CN114959600B (en) * 2022-05-31 2023-08-18 北京北方华创微电子装备有限公司 Process chamber and semiconductor process equipment

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Open date: 20090311