CN107304473B - Reaction chamber and semiconductor processing equipment - Google Patents

Reaction chamber and semiconductor processing equipment Download PDF

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Publication number
CN107304473B
CN107304473B CN201610246619.XA CN201610246619A CN107304473B CN 107304473 B CN107304473 B CN 107304473B CN 201610246619 A CN201610246619 A CN 201610246619A CN 107304473 B CN107304473 B CN 107304473B
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tray
reaction chamber
wafer
shielding plate
base
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CN107304473A (en
Inventor
李冬冬
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention provides a reaction chamber and semiconductor processing equipment, which comprise a tray, a base shielding plate and a support member, wherein the tray is used for bearing a plurality of wafers. The base is used for bearing the tray, and the base is liftable, rises to the technology position to carry out the technology, or descends to the loading and unloading position to carry out the operation of getting and putting the tray. When the base is located the technology position, the shielding plate is arranged on the tray, a plurality of through holes are formed in the shielding plate, the through holes correspond to the wafers on the tray one by one, and the shielding plate is used for shielding the wafer-free area of the tray. The support member is used for supporting the shielding plate when the base leaves the process position so as to separate the shielding plate from the tray. The reaction chamber provided by the invention can avoid the problem that the surface of the wafer is polluted when the wafer is pre-cleaned.

Description

Reaction chamber and semiconductor processing equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor processing equipment.
Background
Semiconductor processing equipment is a common equipment for processing semiconductor devices, and in order to improve the quality of products during processes such as etching, sputtering, and chemical vapor deposition, a wafer is first subjected to precleaning (Preclean) to remove impurities such as oxides on the surface of the wafer before performing the deposition process. The general rationale for pre-cleaning the chamber is: and exciting a cleaning gas such as argon, helium or hydrogen and the like which is introduced into the cleaning chamber to form plasma so as to perform chemical reaction and physical bombardment on the wafer, so that impurities on the surface of the wafer can be removed.
In addition, in the process, a susceptor is generally used to support and fix a workpiece to be processed, such as a wafer, and to transport the workpiece to a reaction chamber for processing. In order to improve the production efficiency of plasma processing equipment and reduce the production cost, when small-sized wafers such as 2 inches, 4 inches or 6 inches are processed, a plurality of wafers are generally fixed on a large-sized tray at the same time, so that the processed workpieces such as a plurality of wafers are processed at the same time.
Fig. 1 is a plan view of a conventional structure for supporting and fixing a pallet. Fig. 2 is a cross-sectional view of the structure of fig. 1. Referring to fig. 1 and 2, the structure includes a press ring 1, a tray 2, and a base 10, wherein the base 10 is disposed in the reaction chamber for supporting the tray 2. The tray 2 is used for carrying a plurality of wafers 3, and the plurality of wafers 3 are uniformly distributed along the circumferential direction of the tray 2. The pressing ring 1 fixes the tray 2 on the base 10 by pressing the edge of the tray 2.
In the process of carrying out the process, the tray 2 needs to be repeatedly conveyed into the reaction chamber for carrying out the deposition process, that is, after the deposition process of a batch of wafers is completed, the tray 2 is taken out of the reaction chamber, a new batch of wafers is placed again, and then the tray is firstly placed into the pre-cleaning chamber for carrying out the pre-cleaning process, and then the tray is placed into the reaction chamber for carrying out the deposition process. However, when the deposition process is performed, since the metal thin film is deposited on the wafer-free area a of the tray 2, when the tray 2 carries the next batch of wafers and performs the pre-cleaning process, the ions of the cleaning gas not only bombard the wafer surface, but also bombard the wafer-free area a of the tray 2, so that the metal atoms deposited on the area are bombarded out, and a part of the metal atoms may be deposited on the wafer 3, thereby causing the wafer surface to be contaminated.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides a reaction chamber and a semiconductor processing apparatus, which can prevent the surface of a wafer from being contaminated during a pre-cleaning process.
The reaction chamber comprises a tray and a base, wherein the tray is used for bearing a plurality of wafers; the base is used for bearing the tray and is capable of lifting and descending to ascend to a process position for carrying out a process or descend to a loading and unloading position for carrying out operation of taking and placing the tray, the base further comprises a shielding plate and a supporting piece, the shielding plate is arranged on the tray when the base is located at the process position, a plurality of through holes are formed in the shielding plate and correspond to the wafers on the tray one by one, and the shielding plate is used for shielding a wafer-free area of the tray; the support is used for supporting the shielding plate when the base leaves the process position so as to separate the shielding plate from the tray.
Preferably, the tray is made of silicon carbide.
Preferably, the tray is made of aluminum alloy.
Preferably, the tray is subjected to surface hard anodizing treatment.
Preferably, the reaction chamber further comprises a liner ring for protecting the inner wall of the reaction chamber; the lower end of the liner ring has an annular support portion serving as the support.
Preferably, an annular groove is formed in the bottom of the shielding plate and corresponds to the annular supporting portion, and the annular supporting portion is located in the annular groove when the base leaves the process position.
Preferably, the support member includes at least three support columns and is circumferentially disposed around the base.
Preferably, at least three grooves are formed in the bottom of the shielding plate and in positions corresponding to the support columns one to one, and the support columns are located in the grooves one to one when the base leaves the process position.
As another technical solution, the present invention further provides a semiconductor processing apparatus, including a pre-cleaning chamber and a reaction chamber, wherein the pre-cleaning chamber is used for performing a pre-cleaning process on a wafer to remove impurities on the surface of the wafer; the reaction chamber is used for processing the wafer after the wafer is subjected to the pre-cleaning process, and the reaction chamber adopts the reaction chamber provided by the invention.
Preferably, the reaction chamber is used for a physical vapor deposition chamber or a magnetron sputtering chamber.
The invention has the following beneficial effects:
according to the reaction chamber provided by the invention, when the base is positioned at the process position, the wafer-free area of the tray is shielded by the shielding plate, namely, the shielding plate is provided with the through holes, and the through holes correspond to the wafers on the tray one by one, so that the metal film can be prevented from being deposited on the wafer-free area of the tray when the wafer is subjected to a deposition process. Meanwhile, when the base leaves the process position, the shielding plate is supported by the supporting piece, so that the shielding plate can be separated from the tray, and when the tray bearing the next batch of wafers is conveyed to the pre-cleaning chamber for pre-cleaning, the metal film does not exist in the wafer-free area of the tray, so that the surface of the wafer can be prevented from being polluted.
According to the semiconductor processing equipment provided by the invention, the reaction chamber provided by the invention can be used for avoiding the problem that the surface of the wafer is polluted when the wafer is pre-cleaned.
Drawings
FIG. 1 is a top view of a prior art structure for supporting and securing a pallet;
FIG. 2 is a cross-sectional view of the structure of FIG. 1;
FIG. 3A is a cross-sectional view of a reaction chamber provided in accordance with an embodiment of the present invention;
FIG. 3B is a partial cross-sectional view of the reaction chamber with the susceptor in the process position;
FIG. 3C is a partial cross-sectional view of the reaction chamber with the susceptor removed from the process position;
figure 4 is a top view of a shield in an embodiment of the invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the reaction chamber and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 3A is a cross-sectional view of a reaction chamber provided in an embodiment of the invention. Figure 3B is a partial cross-sectional view of the reaction chamber with the susceptor in the process position. Figure 3C is a partial cross-sectional view of the reaction chamber with the susceptor removed from the process position. Figure 4 is a top view of a shield in an embodiment of the invention. Referring to fig. 3A-4, the reaction chamber 100 includes a tray 103, a susceptor 102, a susceptor lift mechanism 101, a shielding plate 104, and a support. Wherein the tray 103 is used for carrying a plurality of wafers 108. The base 102 is used for carrying the tray 103, and the base lifting mechanism 101 is used for driving the base 102 to ascend to a process position E for processing, or descend to a loading and unloading position for taking and placing the tray 103.
When the susceptor 102 is in the process position E, the shutter 104 is placed on the tray 103, as shown in fig. 3B. Moreover, a plurality of through holes are formed in the shielding plate 104, and the through holes correspond to the wafers 108 on the tray 103 in a one-to-one manner, and further, the number of the through holes is consistent with the number of the wafers placed on the tray 103, and the positions of the through holes correspond to one-to-one manner, so that the upper surfaces of the wafers 108 can be exposed to the process environment.
The shielding plate 104 is used to shield the waferless area B of the tray 103, as shown in fig. 4. The non-wafer area of the tray refers to an area on the upper surface of the tray where no wafer is placed. By shielding the waferless area B of the tray 103 by the shielding plate 104, the deposition of the metal thin film on the waferless area B of the tray 103 can be avoided when the deposition process is performed on the wafer 108.
When the base 102 leaves the process position E, the support 107 is used to support the shutter 104 so that the shutter 104 is separated from the tray 103, as shown in fig. 3C. Thus, when the tray 103 carrying the next batch of wafers is transported to the pre-cleaning chamber for pre-cleaning, the metal film is not present in the wafer-free area B of the tray, so that the surface of the wafer can be prevented from being contaminated.
In this embodiment, the reaction chamber 100 further includes a liner ring for protecting the inner wall of the reaction chamber 100 from plasma etching. The liner ring is composed of an upper liner ring 105 and a lower liner ring 106 which are nested with each other, and the upper liner ring 105 is positioned inside the lower liner ring 106. Wherein the lower end of the lower liner ring 106 has an annular support portion 107, and the annular support portion 107 serves as a support for supporting the shielding plate 104 when the susceptor 102 is moved away from the process position E. The specific structure of the loop-shaped support portion 107 is shown in fig. 3A, and it is bent from the lower end of the lower liner loop 106 to the inner side thereof to form a "barb shape".
Preferably, an annular groove is provided at the bottom of the shielding plate 104 at a position corresponding to the annular support portion 107, and the annular support portion 107 is located in the annular groove when the susceptor 102 is separated from the process position E, thereby achieving stable support of the shielding plate 104.
It should be noted that fig. 3A only schematically illustrates the structures of the shielding plate 104, the tray 103, and the base 102, and the structures adopted by the shielding plate 104, the tray 103, and the base 102 in this embodiment are based on the structures of the shielding plate 104, the tray 103, and the base 102 illustrated in fig. 3A to 3C.
In practical applications, the tray 103 may be made of a metal or a nonmetal with high hardness, preferably silicon carbide.
In practical applications, the tray 103 may be made of a material such as aluminum alloy. Preferably, the surface hard anodizing treatment is performed on the wafer-free area B of the tray 103 to improve the etching resistance of the area, so that when the wafer is subjected to the precleaning process, the etching rate of the Ar ions on the wafer-free area B of the tray 103 is ensured to be low, or even hardly etched, and further the wafer can be prevented from being contaminated.
It should be noted that the structure of the supporting member is not limited to the annular supporting portion 107 of the lower liner ring 105 in this embodiment, and in practical applications, the supporting member may also be composed of at least three supporting columns and is disposed around the base 102, which also can stably support the shielding plate 104 when the base 102 leaves the process position E. Preferably, at least three grooves are formed at the bottom of the shielding plate 104 and in positions corresponding to the support posts one by one, and the support posts are located in the grooves one by one when the susceptor leaves the process position E, so that the shielding plate 104 is stably supported.
In summary, the reaction chamber according to the embodiment of the invention can prevent the metal film from being deposited on the non-wafer area B of the tray 103 when the deposition process is performed on the wafer 108. Meanwhile, when the susceptor 102 leaves the process position E, the shielding plate 104 can be separated from the tray 103 by supporting the shielding plate 104 by the supporting member, so that when the tray 103 carrying the next batch of wafers is transported to the pre-cleaning chamber for pre-cleaning, the wafer surface can be prevented from being contaminated because the wafer-free region B of the tray 103 does not have a metal film.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, including a pre-cleaning chamber and a reaction chamber, wherein the pre-cleaning chamber is used for performing a pre-cleaning process on a wafer to remove impurities on the surface of the wafer. The reaction chamber is used for processing the wafer after the wafer is subjected to the pre-cleaning process. The reaction chamber provided by the embodiment of the invention is adopted.
In practical applications, the reaction chamber can be used for a physical vapor deposition chamber to perform a deposition process or a magnetron sputtering chamber to perform a sputtering process.
According to the semiconductor processing equipment provided by the embodiment of the invention, the reaction chamber provided by the embodiment of the invention can be used for avoiding the problem that the surface of the wafer is polluted when the wafer is pre-cleaned.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

1. A reaction chamber comprises a tray and a base, wherein the tray is used for bearing a plurality of wafers; the base is used for bearing the tray and can be lifted and descended to a process position for carrying out a process or a loading and unloading position for carrying out the operation of taking and placing the tray, the base is characterized by further comprising a shielding plate and a supporting piece, wherein,
when the base is located at the process position, the shielding plate is arranged on the tray and provided with a plurality of through holes, the through holes correspond to the wafers on the tray one by one, and the shielding plate is used for shielding the wafer-free area of the tray;
the support is used for supporting the shielding plate when the base leaves the process position so as to separate the shielding plate from the tray.
2. The reaction chamber of claim 1, wherein the tray is made of silicon carbide.
3. The reaction chamber of claim 1, wherein the tray is made of an aluminum alloy.
4. The reaction chamber of claim 3, wherein the tray is surface hardened anodized.
5. The reaction chamber of any of claims 1-4, further comprising a liner ring for protecting an inner wall of the reaction chamber; the lower end of the liner ring has an annular support portion serving as the support.
6. The reaction chamber of claim 5, wherein an annular groove is provided at the bottom of the shutter at a position corresponding to the annular support, and the annular support is located in the annular groove when the susceptor leaves the process position.
7. The reaction chamber as claimed in any one of claims 1 to 4, wherein the support comprises at least three support columns and is circumferentially disposed around the susceptor.
8. The reaction chamber of claim 7, wherein at least three grooves are formed in the bottom of the shielding plate at positions corresponding to the support posts, and each support post is located in one groove when the susceptor leaves the process position.
9. The semiconductor processing equipment comprises a pre-cleaning chamber and a reaction chamber, wherein the pre-cleaning chamber is used for carrying out a pre-cleaning process on a wafer so as to remove impurities on the surface of the wafer; the reaction chamber is used for processing the wafer after the wafer is subjected to the pre-cleaning process, and is characterized in that the reaction chamber is the reaction chamber of any one of claims 1 to 8.
10. The semiconductor processing apparatus of claim 9, wherein the reaction chamber is used in a physical vapor deposition chamber or a magnetron sputtering chamber.
CN201610246619.XA 2016-04-20 2016-04-20 Reaction chamber and semiconductor processing equipment Active CN107304473B (en)

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CN107304473B true CN107304473B (en) 2020-08-21

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CN108060406B (en) * 2018-01-29 2023-09-08 北京北方华创微电子装备有限公司 Shielding platen assembly, semiconductor processing apparatus and method
CN110828271A (en) * 2018-08-07 2020-02-21 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
JP7190386B2 (en) * 2019-03-28 2022-12-15 芝浦メカトロニクス株式会社 Deposition equipment

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US7736528B2 (en) * 2005-10-12 2010-06-15 Panasonic Corporation Plasma processing apparatus and plasma processing method
KR102124441B1 (en) * 2009-12-31 2020-06-18 어플라이드 머티어리얼스, 인코포레이티드 Shadow ring for modifying wafer edge and bevel deposition
CN203530421U (en) * 2013-10-25 2014-04-09 精曜(苏州)新能源科技有限公司 Shielding tray for solar cell
CN105088167B (en) * 2014-05-20 2018-01-09 北京北方华创微电子装备有限公司 Bogey, reaction chamber and semiconductor processing equipment

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