TWI660391B - Bearing base and pre-cleaning device - Google Patents
Bearing base and pre-cleaning device Download PDFInfo
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- TWI660391B TWI660391B TW106122450A TW106122450A TWI660391B TW I660391 B TWI660391 B TW I660391B TW 106122450 A TW106122450 A TW 106122450A TW 106122450 A TW106122450 A TW 106122450A TW I660391 B TWI660391 B TW I660391B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
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- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Rolling Contact Bearings (AREA)
Abstract
本發明提供了承載基座及預清洗裝置。該承載基座用於承載待加工工件，該承載基座上形成有第一凹部，該待加工工件能夠容納於該第一凹部中；該第一凹部的底壁上開設有第二凹部，該第二凹部用於降低該待加工工件中心區域的蝕刻速率。本發明提供的承載基座及預清洗裝置不僅可減弱待加工工件的邊緣電場，而且可減弱中心區域的電壓，從而可以有效提高待加工工件的蝕刻均勻性，獲得更佳的製程結果。The invention provides a bearing base and a pre-cleaning device. The carrying base is used for carrying a workpiece to be processed. A first recess is formed on the carrying base, and the workpiece to be processed can be received in the first recess. A second recess is formed on a bottom wall of the first recess. The second recess is used to reduce the etching rate of the central area of the workpiece to be processed. The bearing base and the pre-cleaning device provided by the invention can not only weaken the fringe electric field of the workpiece to be processed, but also reduce the voltage in the central region, so that the etching uniformity of the workpiece to be processed can be effectively improved and a better process result can be obtained.
Description
本發明涉及電漿裝置領域，更具體地，涉及一種承載基座及預清洗裝置。The invention relates to the field of plasma devices, and more particularly, to a bearing base and a pre-cleaning device.
電漿裝置廣泛應用於半導體、太陽能電池、平板顯示等製造領域中。常見的電漿裝置包括電容耦合電漿(Capacitively Coupled Plasma，CCP)、電感耦合電漿(Inductively Coupled Plasma，ICP)以及電子迴旋共振電漿(Electron Cyclotron Resonance，ECR)等類型的電漿處理裝置。這些電漿裝置通常可在電漿蝕刻、物理氣相沉積(Physical Vapor Deposition，PVD)、化學氣相沉積(Chemical Vapor Deposition，CVD)以及增強化學氣相沉積(Plasma Enhanced Chemical Vapor Deposition，PECVD)等加工製程中使用。Plasma devices are widely used in manufacturing fields such as semiconductors, solar cells, and flat panel displays. Common plasma devices include capacitively coupled plasma (CCP), inductively coupled plasma (ICP), and electronic cyclotron resonance plasma (ECR) plasma processing devices. These plasma devices can be used in plasma etching, Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), and Plasma Enhanced Chemical Vapor Deposition (PECVD). Used in processing.
物理氣相沉積製程是半導體工業中最廣為使用的一類薄膜製備技術，在進行物理氣相沉積前，一般需要去氣製程（Degas）和預清洗製程（Preclean）。去氣製程是在去氣腔，將晶片加熱至一定溫度，以去除晶片上吸附的水蒸氣及其它易揮發雜質。預清洗製程則是通過射頻功率的作用，將低氣壓的反應氣體(常見氣體如，氬氣)激發為電漿，電漿中含有大量的電子、離子和激發態的原子等活性基團，其中的離子在射頻電場中獲得足夠的能量，對晶片表面進行轟擊，從而將表面以及溝槽底部的殘留物和金屬氧化物清除。The physical vapor deposition process is the most widely used type of thin film preparation technology in the semiconductor industry. Before physical vapor deposition, generally a degas process (Pregas) and a preclean process (Preclean) are required. In the degassing process, the wafer is heated to a certain temperature in the degassing cavity to remove water vapor and other volatile impurities adsorbed on the wafer. The pre-cleaning process uses the power of RF power to excite a low-pressure reaction gas (common gas such as argon) into a plasma. The plasma contains a large number of active groups such as electrons, ions, and excited atoms, among which The ions get enough energy in the radio frequency electric field to bombard the surface of the wafer, thereby removing residues and metal oxides on the surface and the bottom of the trench.
由於通常承載晶片的晶片台為簡單的平面圓盤結構，在預清洗製程中，一方面，由於晶片台的尺寸與晶片相近，且晶片台的邊緣電場較強，會使得晶片的邊緣蝕刻速率偏快；另一方面，由於電漿密度的分佈往往在徑向不均勻，且通常為晶片台中心區域的電漿密度較高，從而導致對晶片中心區域的蝕刻速率偏快。綜上兩方面的原因，最終導致對晶片整體的蝕刻均勻性較差，進而影響製程效果。Because the wafer stage that usually carries the wafer is a simple flat disc structure, in the pre-cleaning process, on the one hand, because the size of the wafer stage is similar to the wafer, and the edge electric field of the wafer stage is strong, the edge etching rate of the wafer will be biased. Fast; on the other hand, because the plasma density distribution is often uneven in the radial direction, and usually the plasma density is higher in the center region of the wafer stage, which results in a faster etching rate in the center region of the wafer. To sum up the above two reasons, the overall etching uniformity of the wafer is poor, which affects the process effect.
本發明旨在至少解決現有技術中存在的技術問題之一，提出了一種承載基座及預清洗裝置，該承載基座及預清洗裝置不僅可減弱待加工工件的邊緣電場，從而降低對待加工工件邊緣的蝕刻速率，而且可減弱中心區域的電壓，有效降低中心區域攻擊待加工工件的離子能量，從而降低對待加工工件中心區域的蝕刻速率，進而有效提高待加工工件的蝕刻均勻性，獲得更佳的製程結果。The invention aims to solve at least one of the technical problems existing in the prior art, and proposes a bearing base and a pre-cleaning device. The bearing base and the pre-cleaning device can not only weaken the fringe electric field of the workpiece to be processed, thereby reducing the workpiece to be processed. The etching rate of the edges can reduce the voltage in the central area, effectively reduce the ion energy that attacks the workpiece to be processed in the central area, thereby reducing the etching rate in the central area of the workpiece to be processed, and then effectively improve the etching uniformity of the workpiece to be processed. Process results.
為實現本發明的目的而提供一種承載基座，用於承載待加工工件，該承載基座上形成有第一凹部，該待加工工件能夠容納於該第一凹部中；該第一凹部的底壁上開設有第二凹部，該第二凹部用於降低該待加工工件中心區域的蝕刻速率。In order to achieve the object of the present invention, a supporting base is provided for supporting a workpiece to be processed. The supporting base is formed with a first concave portion, and the workpiece to be processed can be received in the first concave portion. The bottom of the first concave portion A second recess is defined in the wall, and the second recess is used to reduce the etching rate of the central region of the workpiece to be processed.
其中，該第一凹部、該第二凹部與該承載基座同心設置。Wherein, the first recessed portion and the second recessed portion are concentrically disposed with the carrying base.
其中，該第一凹部開設於該承載基座的承載面上。Wherein, the first concave portion is opened on the bearing surface of the bearing base.
其中，該第一凹部的直徑大於該待加工工件的直徑，且二者直徑的差值範圍為1mm至6mm，該第一凹部的深度的取值範圍為0.3mm至1.5mm。The diameter of the first recess is greater than the diameter of the workpiece to be processed, and the difference between the diameters of the two is in the range of 1 mm to 6 mm. The depth of the first recess is in the range of 0.3 mm to 1.5 mm.
其中，該第二凹部的開口的面積為該待加工工件的表面積的40%至95%，該第二凹部的深度的取值範圍為0.1mm至0.5mm。 The area of the opening of the second concave portion is 40% to 95% of the surface area of the workpiece to be processed, and the depth of the second concave portion ranges from 0.1 mm to 0.5 mm.
其中，該承載基座上設有用於給待加工工件的支撐針提供移動通道的通孔，該通孔與該待加工工件的邊緣的徑向距離不小於10mm。 Wherein, the bearing base is provided with a through hole for providing a moving channel for the support pin of the workpiece to be processed, and the radial distance between the through hole and the edge of the workpiece to be processed is not less than 10 mm.
其中，該承載基座上的未設置該第一凹部的表面設有陶瓷層。 Wherein, the surface of the supporting base on which the first recess is not provided is provided with a ceramic layer.
其中，該第一凹部和第二凹部的表面均設有陽極氧化膜。 Wherein, the surfaces of the first recessed portion and the second recessed portion are both provided with an anodized film.
其中，該承載基座的邊緣區域設有介電質環，該介電質環的內周壁形成該第一凹部的側壁，該承載基座的承載面形成該第一凹部的底壁。 Wherein, a dielectric ring is provided in an edge region of the supporting base, an inner peripheral wall of the dielectric ring forms a side wall of the first recess, and a supporting surface of the supporting base forms a bottom wall of the first recess.
其中，該介電質環的內徑大於該待加工工件的直徑，且二者直徑的差值範圍為2mm至4mm，該介電質環的厚度取值範圍為3mm至5mm。 The inner diameter of the dielectric ring is larger than the diameter of the workpiece to be processed, and the difference between the diameters of the two rings ranges from 2 mm to 4 mm, and the thickness of the dielectric ring ranges from 3 mm to 5 mm.
其中，該承載基座還包括定位件，該定位件與該承載基座的徑向配合，用於使該介電質環定位在該承載基座上。 Wherein, the bearing base further includes a positioning member, which is radially matched with the bearing base, and is used for positioning the dielectric ring on the bearing base.
其中，該定位件與該介電質環二者一體成型。 The positioning member and the dielectric ring are integrally formed.
作為另一個方面，本發明還提供一種預清洗裝置，其包括腔體和本發明前述任一方案所提供的承載基座，該承載基座設置於該腔體中。 As another aspect, the present invention further provides a pre-cleaning device, which includes a cavity and a supporting base provided in any one of the foregoing aspects of the present invention, and the supporting base is disposed in the cavity.
本發明具有以下有益效果： The invention has the following beneficial effects:
本發明的承載基座設有第一凹部以及設置於第一凹部底壁的第二凹部，該第一凹部可減弱待加工工件的邊緣電場，降低待加工工件邊緣的蝕刻速率；該第二凹部的設置可減弱第二凹部所在中心區域內的電壓，有效降低攻擊待加工工件的中心區域的離子能量，從而降低待加工工件的中心區域的蝕刻速率，通過二者的作用，可有效提高待加工工件的蝕刻均勻性，獲得更佳的製程結果。 The carrying base of the present invention is provided with a first recessed portion and a second recessed portion provided on the bottom wall of the first recessed portion. The first recessed portion can reduce the fringe electric field of the workpiece to be processed, and reduces the etching rate of the edge of the workpiece. The setting can reduce the voltage in the central area where the second recess is located, effectively reduce the ion energy that attacks the central area of the workpiece to be processed, thereby reducing the etching rate of the central area of the workpiece to be processed. The effects of the two can effectively improve the processing Etching uniformity of the workpiece for better process results.
本發明的預清洗裝置，其通過採用上述承載基座，不僅可減弱待加工工件的邊緣電場，從而降低對待加工工件邊緣的蝕刻速率，而且可減弱第二凹部所在中心區域內的電壓，可有效降低攻擊待加工工件的中心區域的離子 能量，從而降低對待加工工件的中心區域的蝕刻速率，進而有效提高待加工工件的蝕刻均勻性，獲得更佳的製程結果。The pre-cleaning device of the present invention, by using the above-mentioned bearing base, can not only reduce the fringe electric field of the workpiece to be processed, thereby reducing the etching rate of the edge of the workpiece to be processed, but also weaken the voltage in the center region where the second recess is located, which can effectively Reduced ions attacking the central area of the workpiece Energy, thereby reducing the etching rate of the central region of the workpiece to be processed, thereby effectively improving the etching uniformity of the workpiece to be processed, and obtaining better process results.
現在將參照附圖來詳細描述本發明的各種示例性實施例。應注意到：除非另外具體說明，否則在這些實施例中闡述的部件和步驟的相對佈置、數位運算式和數值不限制本發明的範圍。 Various exemplary embodiments of the present invention will now be described in detail with reference to the drawings. It should be noted that the relative arrangement of the components and steps, the numerical expressions, and the numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
以下對至少一個示例性實施例的描述實際上僅僅是說明性的，決不作為對本發明及其應用或使用的任何限制。 The following description of at least one exemplary embodiment is actually merely illustrative and is in no way intended to limit the invention and its application or uses.
對於相關領域普通技術人員已知的技術、方法和裝置可能不作詳細討論，但在適當情況下，該技術、方法和裝置應當被視為說明書的一部分。 Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, the techniques, methods and devices should be considered as part of the description.
在這裡示出和討論的所有例子中，任何具體值應被解釋為僅僅是示例性的，而不是作為限制。因此，示例性實施例的其它例子可以具有不同的值。In all examples shown and discussed herein, any specific value should be construed as exemplary only and not as a limitation. Therefore, other examples of the exemplary embodiments may have different values.
應注意到：相似的標號和字母在下面的附圖中表示類似項，因此，一旦某一項在一個附圖中被定義，則在隨後的附圖中不需要對其進行進一步討論。It should be noted that similar reference numerals and letters indicate similar items in the following drawings, so once an item is defined in one drawing, it need not be discussed further in subsequent drawings.
為了解決預清洗時晶片的蝕刻均勻性較差的問題，本發明提供了一種承載基座。In order to solve the problem of poor etching uniformity of the wafer during pre-cleaning, the present invention provides a carrier base.
該承載基座用於承載待加工工件。該待加工工件通常為晶片。承載基座上形成有第一凹部，用於容納待加工工件。待加工工件可限制在第一凹部內，從而避免待加工工件在承載基座上出現較大的移位，影響到待加工工件的傳輸。此外，第一凹部可減弱待加工工件的邊緣電場，以避免待加工工件邊緣的蝕刻速率過快。The carrying base is used for carrying a workpiece to be processed. The workpiece to be processed is usually a wafer. A first recess is formed on the load-bearing base for receiving a workpiece to be processed. The workpiece to be processed can be restricted in the first recess, thereby avoiding a large displacement of the workpiece to be processed on the bearing base, which affects the transport of the workpiece to be processed. In addition, the first recess can reduce the edge electric field of the workpiece to be processed, so as to avoid the etching rate of the edge of the workpiece to be processed being too fast.
第一凹部的底壁上設有第二凹部。第二凹部用於降低待加工工件中心區域的蝕刻速率。A second recess is provided on the bottom wall of the first recess. The second recess is used to reduce the etching rate of the central area of the workpiece to be processed.
通常情況下，電漿3在中心區域的密度較高，導致與其對應的待加工工件2的中心區域的蝕刻速率較快。通過設置第二凹部12可降低電漿3轟擊待加工工件2的中心區域的離子能量，以此降低待加工工件2的中心區域的蝕刻速率，如第4圖所示。Generally, the density of the plasma 3 in the central region is high, which results in a faster etching rate in the central region of the workpiece 2 to be processed corresponding thereto. By providing the second recessed portion 12, the ion energy of the plasma 3 hitting the central region of the workpiece 2 can be reduced, thereby reducing the etching rate of the central region of the workpiece 2, as shown in FIG. 4.
具體原理如下：電漿3與承載基座1之間存在著直流偏壓。由於第二凹部12的存在，相當於待加工工件2與承載基座1之間存在電容C1，該電容C1的厚度為d；電漿3與待加工工件2之間存在鞘電容C2，該鞘電容C2的厚度為Sm ，且電容C1與鞘電容C2串聯。根據電漿鞘層理論可知，鞘電容C2在中心區域的分壓為，電容C1在中心區域的分壓為，其中，k為與電漿密度有關的係數。由於，這樣，入射到第二凹部12上方的待加工工件2的離子能量相比於入射到第二凹部12以外的待加工工件2的離子能量降低了，且，從而使得第二凹部12上方的待加工工件2的蝕刻速率變慢。The specific principle is as follows: there is a DC bias between the plasma 3 and the carrier base 1. . Due to the existence of the second recessed portion 12, it is equivalent to the presence of a capacitor C1 between the workpiece 2 to be processed and the supporting base 1, and the thickness of the capacitor C1 is d; The thickness of the capacitor C2 is S m , and the capacitor C1 and the sheath capacitor C2 are connected in series. According to the plasma sheath theory, the partial pressure of the sheath capacitor C2 in the center region for , The divided voltage of capacitor C1 in the central area for Where k is a coefficient related to plasma density. due to In this way, the ion energy incident on the workpiece 2 to be processed above the second recessed portion 12 is reduced compared to the ion energy incident on the workpiece 2 to be processed outside the second recessed portion 12. , And Therefore, the etching rate of the workpiece 2 to be processed above the second recess 12 is slowed.
可選地，第一凹部11、第二凹部12與承載基座1同心設置。第一凹部11、第二凹部12和承載基座1三者同心設置，有利於進一步地提高待加工工件2的蝕刻均勻性。Optionally, the first recessed portion 11 and the second recessed portion 12 are disposed concentrically with the carrying base 1. The first recessed portion 11, the second recessed portion 12 and the supporting base 1 are arranged concentrically, which is beneficial to further improve the etching uniformity of the workpiece 2 to be processed.
具體實施時，可選地，承載基座1的承載面的直徑大於第一凹部11的直徑，且二者的直徑差值範圍為10mm-30mm。這樣，既能夠保證在承載基座1的承載面上方便且牢固地形成第一凹部11；又不會使承載基座1的面積過大，從而可以節約製造、使用及存放的成本。In specific implementation, optionally, the diameter of the load-bearing surface of the load-bearing base 1 is larger than the diameter of the first recessed portion 11, and the diameter difference between the two is in the range of 10 mm-30 mm. In this way, the first concave portion 11 can be conveniently and firmly formed on the bearing surface of the bearing base 1; the area of the bearing base 1 is not excessively large, so that the manufacturing, use, and storage costs can be saved.
如第1圖所示，該第一凹部11可直接在承載基座1上的承載面上形成，例如，將第一凹部11開設於承載基座1的承載面上。該處承載基座1的承載面是指承載基座1用於承載待加工工件2的表面。As shown in FIG. 1, the first recessed portion 11 may be directly formed on the bearing surface of the bearing base 1. For example, the first recessed portion 11 is opened on the bearing surface of the bearing base 1. The bearing surface of the bearing base 1 here refers to the surface of the bearing base 1 for carrying the workpiece 2 to be processed.
進一步地，第一凹部11的直徑大於待加工工件2的直徑，且二者直徑的差值範圍為1mm-6mm。第一凹部11的深度的取值範圍為0.3mm-1.5mm。上述第一凹部11的尺寸的限定，既便於待加工工件2的取放，又能更好地將待加工工件2限制在第一凹部11內，並且還有利於進一步地提高待加工工件2的蝕刻均勻性。Further, the diameter of the first recessed portion 11 is larger than the diameter of the workpiece 2 to be processed, and the difference between the diameters of the two is in the range of 1 mm-6 mm. The value of the depth of the first recessed portion 11 ranges from 0.3 mm to 1.5 mm. The above-mentioned limitation of the size of the first recessed portion 11 not only facilitates the pick-up and placement of the workpiece 2 to be processed, but also better confines the workpiece 2 to be processed within the first recessed portion 11, and also helps to further improve the Etching uniformity.
以承載直徑為200mm的晶片為例，具體實施時，第一凹部11的直徑可為204mm，第一凹部11的深度可為0.5mm。Taking a wafer having a diameter of 200 mm as an example, in specific implementation, the diameter of the first recessed portion 11 may be 204 mm, and the depth of the first recessed portion 11 may be 0.5 mm.
可選地，第二凹部12的開口的面積為待加工工件2的表面積的40%-95%。進一步地，第二凹部12的開口的面積為待加工工件2的表面積的75%-95%，從而能夠更有效地降低待加工工件2的中心區域的蝕刻速率。第二凹部12的深度的取值範圍為0.1mm-0.5mm。上述第二凹部12的尺寸的限定有利於更有效地降低待加工工件2的中心區域的蝕刻速率，並且有利於進一步地提高待加工工件2的蝕刻均勻性。 Optionally, the area of the opening of the second recess 12 is 40% -95% of the surface area of the workpiece 2 to be processed. Further, the area of the opening of the second recessed portion 12 is 75% -95% of the surface area of the workpiece 2 to be processed, so that the etching rate of the central region of the workpiece 2 to be processed can be more effectively reduced. The value of the depth of the second concave portion 12 ranges from 0.1 mm to 0.5 mm. The above-mentioned limitation of the size of the second recessed portion 12 is conducive to reducing the etching rate of the central region of the workpiece 2 to be processed more effectively, and to further improve the etching uniformity of the workpiece 2.
以承載直徑為200mm的晶片為例，具體實施時，第二凹部12的直徑可為180mm，第二凹部12的深度可為0.2mm。 Taking a wafer with a diameter of 200 mm as an example, in specific implementation, the diameter of the second recessed portion 12 may be 180 mm, and the depth of the second recessed portion 12 may be 0.2 mm.
可選地，如第2圖所示，承載基座1上設有用於給待加工工件2的支撐針提供移動通道的通孔13，支撐針可在通孔13內上下移動，以帶動待加工工件2上升或下降。通孔13與待加工工件2的邊緣的徑向距離不小於10mm，這樣，既可以避免電漿進入通孔13內，引起蝕刻速率異常；又能夠保證在升針和降針的過程中對待加工工件2進行穩固的支撐。 Optionally, as shown in FIG. 2, the supporting base 1 is provided with a through hole 13 for providing a moving channel for a supporting pin of the workpiece 2 to be processed. The supporting pin can be moved up and down in the through hole 13 to drive the to be processed. Workpiece 2 is raised or lowered. The radial distance between the through hole 13 and the edge of the workpiece 2 to be processed is not less than 10 mm. In this way, it can prevent the plasma from entering the through hole 13 and cause an abnormal etching rate. It can also ensure that the needle is processed during the process of raising and lowering the needle. The workpiece 2 is firmly supported.
可選地，承載基座1上未設置第一凹部11的表面設有陶瓷層。陶瓷層可起到保護承載基座1以及避免污染待加工工件2的作用。陶瓷層的厚度可根據實際需求設置，例如，在承載基座1的承載面上噴塗0.2mm的陶瓷層。 Optionally, a ceramic layer is provided on a surface of the supporting base 1 on which the first recess 11 is not provided. The ceramic layer can protect the supporting base 1 and avoid contaminating the workpiece 2 to be processed. The thickness of the ceramic layer can be set according to actual needs, for example, a 0.2 mm ceramic layer is sprayed on the bearing surface of the bearing base 1.
可選地，第一凹部11和第二凹部12的表面上均設有陽極氧化膜。也即是，至少在第一凹部11的側壁以及第二凹部12的側壁和底壁上設有陽極氧化膜。 Optionally, an anodized film is provided on the surfaces of the first recessed portion 11 and the second recessed portion 12. That is, an anodic oxide film is provided on at least the side wall of the first recessed portion 11 and the side wall and the bottom wall of the second recessed portion 12.
陽極氧化膜可通過對第一凹部11和第二凹部12進行陽極氧化處理形成。陽極氧化膜緻密不導電，耐磨性能好，可有效地保護第一凹部11和第二凹部12，以及避免因第一凹部11和第二凹部12磨損而污染待加工工件2。 The anodized film can be formed by performing anodizing treatment on the first concave portion 11 and the second concave portion 12. The anodized film is dense and non-conductive, and has good abrasion resistance. It can effectively protect the first recessed portion 11 and the second recessed portion 12, and avoid contamination of the workpiece 2 due to the abrasion of the first recessed portion 11 and the second recessed portion 12.
可選地，第一凹部11可由例如為介電質環的構造件和承載基座的承載面共同形成。如第3圖所述，承載基座1的邊緣區域設有介電質環14。介電質環14的內周壁與承載基座1的承載面形成第一凹部11，即，介電質環14的內周壁形成第一凹部11的側壁，承載基座1的承載面形成第一凹部11的底面。並且，在承載基座1的承載面上，也即是在第一凹部11的底壁上設有第二凹部12。介電質環14可選地可為石英環。Alternatively, the first recessed portion 11 may be jointly formed by a structural member such as a dielectric ring and a bearing surface of the bearing base. As shown in FIG. 3, a dielectric ring 14 is provided in an edge region of the carrier base 1. The inner peripheral wall of the dielectric ring 14 and the bearing surface of the carrier base 1 form a first recessed portion 11, that is, the inner peripheral wall of the dielectric ring 14 forms a side wall of the first recessed portion 11, and the bearing surface of the carrier base 1 forms a first The bottom surface of the recessed portion 11. In addition, a second concave portion 12 is provided on a bearing surface of the load base 1, that is, a bottom wall of the first concave portion 11. The dielectric ring 14 may optionally be a quartz ring.
可選地，介電質環14的內徑大於待加工工件2的直徑，且二者直徑的差值範圍為2mm-4mm。介電質環14的厚度H的取值範圍為3mm-5mm。介電質環14的厚度高於待加工工件的厚度，有利於改善第一凹部11的邊緣電場，從而提高待加工工件2的蝕刻均勻性。Optionally, the inner diameter of the dielectric ring 14 is larger than the diameter of the workpiece 2 to be processed, and the difference between the two diameters ranges from 2 mm to 4 mm. The thickness H of the dielectric ring 14 ranges from 3 mm to 5 mm. The thickness of the dielectric ring 14 is higher than the thickness of the workpiece to be processed, which is beneficial to improve the fringe electric field of the first recessed portion 11, thereby improving the etching uniformity of the workpiece 2 to be processed.
可選地，承載基座1還包括定位件15。定位件15與承載基座1的徑向配合，用於使介電質環14定位在承載基座1上。上述定位件15可例如為銷或螺栓等零件，通過銷或螺栓將介電質環14定位在承載基座1上。或者，定位件15為可與承載基座1的邊緣卡合的結構，通過定位件15與承載基座1的邊緣的卡合將介電質環14定位在承載基座1上。又或者，定位件15可為介電質環14的表面上的凸起，承載基座1上設有與該凸起相配合的凹槽，通過凸起和凹槽的配合將介電質環14定位在承載基座1上。Optionally, the supporting base 1 further includes a positioning member 15. The positioning member 15 cooperates with the radial direction of the supporting base 1 to position the dielectric ring 14 on the supporting base 1. The positioning member 15 may be, for example, a pin or a bolt, and the dielectric ring 14 is positioned on the supporting base 1 through the pin or the bolt. Alternatively, the positioning member 15 is a structure capable of engaging with the edge of the supporting base 1, and the dielectric ring 14 is positioned on the supporting base 1 through the engagement of the positioning member 15 with the edge of the supporting base 1. Alternatively, the positioning member 15 may be a protrusion on the surface of the dielectric ring 14. The supporting base 1 is provided with a groove matching the protrusion, and the dielectric ring is matched by the cooperation of the protrusion and the groove. 14 is positioned on the carrier base 1.
進一步地，定位件15與介電質環14二者一體成型。定位件15和介電質環14一體成型有利於提高介電質環14和定位件15的強度，以及便於承載基座1的裝配和維修。Further, both the positioning member 15 and the dielectric ring 14 are integrally formed. The integral formation of the positioning member 15 and the dielectric ring 14 is beneficial to improve the strength of the dielectric ring 14 and the positioning member 15 and facilitate the assembly and maintenance of the bearing base 1.
本發明進一步地提供了一種預清洗裝置。該預清洗裝置包括腔體和本發明前述實施例提供的承載基座1，且承載基座1設置於腔體中。該預清洗裝置可用於待加工工件2的預清洗。The invention further provides a pre-cleaning device. The pre-cleaning device includes a cavity and a carrying base 1 provided in the foregoing embodiment of the present invention, and the carrying base 1 is disposed in the cavity. The pre-cleaning device can be used for pre-cleaning the workpiece 2 to be processed.
本發明提供的預清洗裝置採用了本發明前述實施例提供的承載基座1，借助於承載基座1的第一凹部11，可減弱待加工工件2的邊緣電場，降低待加工工件2邊緣的蝕刻速率，從而能夠有效提高待加工工件2的蝕刻均勻性。並且，通過設置第二凹部12，可減弱第二凹部12所在區域內的電壓，從而有效降低攻擊待加工工件的中心區域的離子能量，進而降低待加工工件2的中心區域的蝕刻速率，因而能夠有效提高待加工工件2的蝕刻均勻性。 The pre-cleaning device provided by the present invention adopts the bearing base 1 provided by the foregoing embodiment of the present invention. With the aid of the first recessed portion 11 of the bearing base 1, the fringe electric field of the workpiece 2 to be processed can be reduced, and the The etching rate can effectively improve the etching uniformity of the workpiece 2 to be processed. In addition, by providing the second recessed portion 12, the voltage in the area where the second recessed portion 12 is located can be reduced, thereby effectively reducing the ion energy that attacks the central region of the workpiece to be processed, and further reducing the etching rate of the central region of the workpiece 2 to be processed, so that Effectively improve the etching uniformity of the workpiece 2 to be processed.
雖然已經通過例子對本發明的一些特定實施例進行了詳細說明，但是本領域的技術人員應該理解，以上例子僅是為了進行說明，而不是為了限制本發明的範圍。本領域的技術人員應該理解，可在不脫離本發明的範圍和精神的情況下，對以上實施例進行修改。本發明的範圍由所附權利要求來限定。Although some specific embodiments of the present invention have been described in detail through examples, those skilled in the art should understand that the above examples are only for the purpose of illustration, and are not intended to limit the scope of the present invention. Those skilled in the art should understand that the above embodiments can be modified without departing from the scope and spirit of the present invention. The scope of the invention is defined by the appended claims.
1‧‧‧承載基座 1‧‧‧ bearing base
2‧‧‧待加工工件 2‧‧‧ Workpiece to be processed
3‧‧‧電漿 3‧‧‧ Plasma
11‧‧‧第一凹部 11‧‧‧ the first recess
12‧‧‧第二凹部 12‧‧‧ the second recess
13‧‧‧通孔 13‧‧‧through hole
14‧‧‧介電質環 14‧‧‧ Dielectric ring
15‧‧‧定位件 15‧‧‧ Positioning piece
被結合在說明書中並構成說明書的一部分的附圖示出了本發明的實施例，並且連同其說明一起用於解釋本發明的原理。 The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
第1圖為本發明一實施例中承載基座的俯視圖。 FIG. 1 is a top view of a carrying base according to an embodiment of the present invention.
第2圖為第1圖該承載基座沿A-A向的剖示圖。 Fig. 2 is a sectional view of the load-bearing base taken along the direction A-A in Fig. 1;
第3圖為本發明另一實施例中承載基座的剖示圖。 FIG. 3 is a cross-sectional view of a bearing base in another embodiment of the present invention.
第4圖為本發明承載基座的技術效果實現的原理示意圖。 FIG. 4 is a schematic diagram of the technical effect of the bearing base of the present invention.
Claims (13)
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| CN105390368A (en) * | 2014-09-09 | 2016-03-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer precleaning cavity and semiconductor processing equipment |
| US10128139B2 (en) * | 2015-03-27 | 2018-11-13 | SCREEN Holdings Co., Ltd. | Substrate holding method and substrate processing apparatus |
| CN206907751U (en) * | 2017-05-24 | 2018-01-19 | 北京北方华创微电子装备有限公司 | A kind of bearing base and precleaning unit |
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| TW200620455A (en) * | 2004-08-26 | 2006-06-16 | Lam Res Corp | Yttria insulator ring for use inside a plasma chamber |
| TW201041078A (en) * | 2009-02-11 | 2010-11-16 | Applied Materials Inc | Non-contact substrate processing |
| TW201546948A (en) * | 2014-06-05 | 2015-12-16 | Applied Materials Inc | Integrated two-axis lift-rotation motor center pedestal in multi-wafer carousel ALD |
| CN105789107A (en) * | 2014-12-26 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Base and plasma processing equipment |
| TW201705278A (en) * | 2015-07-22 | 2017-02-01 | 日立全球先端科技股份有限公司 | Plasma processing apparatus |
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