CN206907751U - A kind of bearing base and precleaning unit - Google Patents
A kind of bearing base and precleaning unit Download PDFInfo
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- CN206907751U CN206907751U CN201720585516.6U CN201720585516U CN206907751U CN 206907751 U CN206907751 U CN 206907751U CN 201720585516 U CN201720585516 U CN 201720585516U CN 206907751 U CN206907751 U CN 206907751U
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- bearing base
- recess
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- diameter
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Abstract
The utility model provides bearing base and precleaning unit.The bearing base is used to carry workpiece to be processed, and formed with the first recess on bearing base, workpiece to be processed is contained in the first recess；The bottom wall of first recess is provided with the second recess, and the second recess is used for the etch rate for reducing workpiece to be processed central area.One purposes of bearing base of the present utility model is to be used for precleaning unit.
Description
Technical field
Plasma apparatus field is the utility model is related to, more particularly, to a kind of bearing base and precleaning unit.
Background technology
Plasma apparatus is widely used in the manufacturing fields such as semiconductor, solar cell, FPD.Common etc.
Gas ions equipment includes capacitance coupling plasma (CapacitivelyCoupled Plasma, CCP), inductively coupled plasma
Body (InductivelyCoupled Plasma, ICP) and Ecr plasma (ElectronCyclotron
Resonance, ECR) etc. type apparatus for processing plasma.These plasma apparatus generally can plasma etching,
Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD), chemical vapor deposition (Chemical Vapor
Deposition, CVD) and enhancing chemical vapor deposition (Plasma Enhanced Chemical Vapor
Deposition, PECVD) etc. use in processing technology.
Physical gas-phase deposition is a kind of film preparing technology most widely used in semi-conductor industry, is carrying out physics
Before vapour deposition, degassing technique (Degas) and pre-cleaning processes (Preclean) are generally required.Degassing technique is to remove air cavity,
Substrate is heated to certain temperature, to remove the vapor adsorbed on substrate and other volatile impurity.Pre-cleaning processes are then
By the effect of radio-frequency power, hypobaric reacting gas (common gas such as, argon gas) is excited as plasma, plasma
In contain the atom isoreactivity group of substantial amounts of electronics, ion and excitation state, ion therein obtains enough in rf electric field
Energy, crystal column surface is bombarded, so as to by the residue and metal oxide of surface and channel bottom remove.
Because the chip bench of generally carrying wafer is simple plane disc structure, in pre-cleaning processes, on the one hand, by
It is close with wafer in the size of chip bench, and the fringe field of chip bench is stronger, can make it that the etching edge speed of wafer is fast；
On the other hand, because the distribution of plasma density is often radially non-uniform, and usually the grade of chip bench central area from
Sub- density is higher, so as to cause the etch rate to crystal circle center region fast.Reason of both to sum up, is ultimately resulted in crystalline substance
The etching homogeneity of rounding body is poor, and then influences technological effect.
The content of the invention
The utility model is intended at least solve one of technical problem present in prior art, it is proposed that a kind of bearing base
And precleaning unit, the bearing base can not only weaken the fringe field of workpiece to be processed, so as to reduce to workpiece to be processed side
The etch rate of edge, and the voltage of central area can be weakened, effectively reduce the ion energy of central area attack workpiece to be processed
Amount, so as to reduce the etch rate to workpiece to be processed central area, and then the etching for effectively increasing workpiece to be processed is uniform
Property, more preferably process results can be obtained.
To realize that the purpose of this utility model provides a kind of bearing base, the bearing base is used to carry work to be processed
Part, formed with the first recess on the bearing base, the workpiece to be processed is contained in first recess；Described first is recessed
The bottom wall in portion is provided with the second recess, and second recess is used for the etch rate for reducing the workpiece to be processed central area.
Alternatively, first recess, second recess are arranged concentrically with the bearing base.
Alternatively, first recess is opened on the loading end of the bearing base.
Alternatively, the diameter of first recess is more than the diameter of the workpiece to be processed, and the difference model of the two diameter
Enclose for 1mm-6mm, the span of the depth of first recess is 0.3mm-1.5mm.
Alternatively, the area of the opening of second recess for the workpiece to be processed surface area 40%-95%, institute
The span for stating the depth of the second recess is 0.1mm-0.5mm.
Alternatively, the bearing base is provided with the through hole of the support needle lifting for the workpiece to be processed, described logical
The radial distance in hole and the edge of the workpiece to be processed is not less than 10mm.
Alternatively, the surface that first recess is not provided with the bearing base is provided with ceramic layer.
Alternatively, it is equipped with anode oxide film on the surface of first recess and the second recess.
Alternatively, the fringe region of the bearing base is provided with dielectric ring, the internal perisporium of the dielectric ring and the carrying
The loading end of pedestal forms first recess.
Alternatively, the internal diameter of the dielectric ring is more than the diameter of the workpiece to be processed, and the difference range of the two diameter
For 2mm-4mm, the Thickness scope of the dielectric ring is 3mm-5mm.
Alternatively, the bearing base also includes keeper, the radial fit of the keeper and the bearing base, uses
It is positioned in making the dielectric ring on the bearing base.
Alternatively, the keeper is integrally formed with both dielectric rings.
The utility model additionally provides a kind of precleaning unit, and the precleaning unit includes cavity and bearing base, should
Bearing base is using the bearing base described in the utility model, and the bearing base is arranged in the cavity.
The utility model has the advantages that：
Bearing base of the present utility model is provided with the first recess and is arranged at the second recess of the first recess bottom wall, and this
One recess can weaken the fringe field of workpiece to be processed, reduce the etch rate at workpiece to be processed edge；Second recess is set
The voltage in central area where can weakening the second recess is put, effectively reduces the ion energy of central area attack workpiece to be processed
Amount, so as to reduce the etch rate of workpiece to be processed central area, by the effect of the two, can effectively improve workpiece to be processed
Etching homogeneity, and then more preferably process results can be obtained.
Precleaning unit of the present utility model, it can not only weaken workpiece to be processed by using above-mentioned bearing base
Fringe field, so as to reduce the etch rate to workpiece to be processed edge, and weaken in the central area of the second recess place
Voltage, the ion energy of central area attack workpiece to be processed can be effectively reduced, so as to reduce to workpiece to be processed central area
Etch rate, and then effectively increase the etching homogeneity of workpiece to be processed, obtain more preferably process results.
Brief description of the drawings
It is combined in the description and the accompanying drawing of a part for constitution instruction shows embodiment of the present utility model, and
And it is used to explain principle of the present utility model together with its explanation.
Fig. 1 is the cut-away view of bearing base in the embodiment of the utility model one.
Fig. 2 is the top view of bearing base described in Fig. 1.
Fig. 3 is the cut-away view of bearing base in another embodiment of the utility model.
Fig. 4 is the principle schematic that the technique effect of the utility model bearing base is realized.
Indicated in figure as follows：
Bearing base -1, the first recess -11, the second recess -12, through hole -13, dielectric ring -14, keeper -15 are to be processed
Workpiece -2, plasma -3.
Embodiment
Various exemplary embodiments of the present utility model are described in detail now with reference to accompanying drawing.It should be noted that：It is unless another
Illustrate outside, the part and the positioned opposite of step, numerical expression and numerical value otherwise illustrated in these embodiments is unlimited
The scope of the utility model processed.
The description only actually at least one exemplary embodiment is illustrative to be never used as to this practicality below
New and its application or any restrictions used.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent accompanying drawing in individual accompanying drawing.
The etching homogeneity of wafer is poor during in order to solve the problems, such as prerinse, and the utility model provides a kind of carrying base
Seat.
The bearing base is used to carry workpiece to be processed.The workpiece to be processed is usually wafer.On bearing base formed with
First recess, workpiece to be processed are contained in the first recess.Workpiece to be processed can be limited in the first recess, to be added so as to avoid
There is larger displacement on bearing base in work workpiece, has influence on the transmission of workpiece to be processed.Treated in addition, the first recess can weaken
The fringe field of workpieces processing, to avoid the etch rate at workpiece to be processed edge too fast.
The bottom wall of first recess is provided with the second recess.Second recess is used for the quarter for reducing workpiece to be processed central area
Lose speed.
As shown in Figure 4, it is generally the case that the density of the central area of plasma 3 is higher, causes to workpiece to be processed 2
The etch rate of central area is very fast.Second recess 12 can reduce plasma 3 bombard workpiece to be processed 2 central area from
Sub- energy, to reduce the central area etch rate of workpiece to be processed 2.
Concrete principle is as follows：There is Dc bias V between plasma 3 and bearing base 1DC.Due to the second recess 12
Presence, equivalent to electric capacity C1 between workpiece to be processed 2 and bearing base 1 be present, electric capacity C1 thickness is d；Plasma 3
Sheath electric capacity C2 between workpiece to be processed 2 be present, sheath electric capacity C2 thickness is Sm, and electric capacity C1 connects with sheath electric capacity C2.Root
Understood according to plasma sheath shelf theory, partial pressure Vs of the sheath electric capacity C2 in central areaSForPoints of the electric capacity C1 in central area
Press V1For kSmD, wherein, k is the coefficient relevant with plasma density.Due to VDC=VS+V1, so, incide second
The ion energy of the workpiece to be processed 2 of the top of recess 12 compared to the workpiece to be processed 2 incided beyond the second recess 12 from
Sub- energy reduces V1, andSo that the quarter of the workpiece to be processed 2 of the top of the second recess 12
It is slack-off to lose speed.
Alternatively, the first recess 11, the second recess 12 are arranged concentrically with bearing base 1.First recess 11, the second recess 12
The etching homogeneity for being advantageous to further improve workpiece to be processed 2 is arranged concentrically with the three of bearing base 1.
When it is implemented, alternatively, the diameter of the loading end of bearing base 1 is more than the diameter of the first recess 11, and the two
Difference in diameter scope be 10mm-30mm.
As shown in figure 1, first recess 11 can be formed on the loading end directly on bearing base 1.Bearing base 1 at this
Loading end refer to that bearing base 1 is used to carry the surface of workpiece to be processed 2.First recess 11 is opened in holding for bearing base 1
On section.Above-mentioned loading end refers to that bearing base 1 is used for the surface for carrying workpiece to be processed 2.
Further, the diameter of the first recess 11 is more than the diameter of workpiece to be processed 2, and the difference range of the two diameter is
1mm-6mm.The span of the depth of first recess 11 is 0.3mm-1.5mm.The size of above-mentioned first recess 11 defines
Beneficial to preferably workpiece to be processed 2 is limited in the first recess 11, and be advantageous to further improve workpiece to be processed 2
Etching homogeneity.
Exemplified by carrying a diameter of 200mm wafer, when it is implemented, the diameter of the first recess 11 can be 204mm, first
The depth of recess 11 can be 0.5mm.
Alternatively, the area of the opening of the second recess 12 is the 40%-95% of the surface area of workpiece to be processed 2.Further
Ground, the area of the opening of the second recess 12 are the 75%-95% of the surface area of workpiece to be processed 2.The depth of second recess 12
Span is 0.1mm-0.5mm.The size of above-mentioned second recess 12 is defined beneficial to more effectively reduction workpiece to be processed 2
The etch rate of central area, and be advantageous to further improve the etching homogeneity of workpiece to be processed 2.
Exemplified by carrying a diameter of 200mm wafer, when it is implemented, the diameter of the second recess 12 can be 180mm.To hold
Exemplified by the wafer for carrying a diameter of 200mm, the depth of the second recess 12 can be 0.2mm.
Alternatively, as shown in Fig. 2 bearing base 1 is provided with the through hole 13 of the support needle lifting for workpiece to be processed 2.
The radial distance of through hole 13 and the edge of workpiece to be processed 2 is not less than 10mm, to avoid plasma from entering in through hole 13, causes
Etch rate is abnormal.Support pin can be moved in through hole 13, and workpiece to be processed 2 is risen or declined.
Alternatively, the surface that the first recess 11 is not provided with bearing base 1 is provided with ceramic layer.Ceramic layer can play protection
Bearing base 1 and the effect for avoiding polluting workpiece to be processed 2.The thickness of ceramic layer can be set according to the actual requirements, for example,
0.2mm ceramic layer is sprayed on the loading end of bearing base 1.
Alternatively, it is equipped with anode oxide film on the surface of the first recess 11 and the second recess 12.It that is to say, it is recessed first
Anode oxide film is equipped with the side wall in portion 11, and the side wall of the second recess 12 and bottom wall.
Anode oxide film can be formed by carrying out anodized to the first recess 11 and the second recess 12.Anodic oxidation
Film densification is non-conductive, and anti-wear performance is good, can effectively protect the first recess 11 and the second recess 12, and avoids polluting to be processed
Workpiece 2.
Alternatively, the first recess 11 can be by being, for example, that the structuring of dielectric ring and the loading end of bearing base are collectively forming.
As described in Figure 3, the fringe region of bearing base 1 is provided with dielectric ring 14.The internal perisporium of dielectric ring 14 and the loading end of bearing base 1
Form the first recess 11.Here, on the loading end of bearing base 1, it that is to say that the bottom wall of the first recess 11 is provided with the second recess
12.Dielectric ring 14 can be alternatively quartz ring.
Alternatively, the internal diameter of dielectric ring 14 is more than the diameter of workpiece to be processed 2, and the difference range of the two diameter is 2mm-
4mm.The thickness H of dielectric ring 14 span is 3mm-5mm.The thickness of dielectric ring 14 is higher than the thickness of workpiece to be processed, has
Beneficial to the fringe field for improving the first recess 11, so as to improve the etching homogeneity of workpiece to be processed 2.
Alternatively, bearing base 1 also includes keeper 15.The radial fit of keeper 15 and bearing base 1, for making Jie
Matter ring 14 is positioned on bearing base 1.Above-mentioned keeper 15 may be, for example, the parts such as pin or bolt, by pin or bolt by medium
Ring 14 is positioned on bearing base 1.Or keeper 15 is the structure that can be engaged with the edge of bearing base 1, passes through keeper
Dielectric ring 14 is positioned on bearing base 1 by 15 engagings with the edge of bearing base 1.Or keeper 15 can be medium
Projection on the surface of ring 14, bearing base 1 are provided with the groove being engaged with the projection, will by raised and groove cooperation
Dielectric ring 14 is positioned on bearing base 1.
Further, keeper 15 is integrally formed with both dielectric rings 14.Keeper 15 and dielectric ring 14 integrally formed with
Beneficial to the intensity for improving dielectric ring 14 and keeper 15.
The utility model further provides a kind of precleaning unit.The precleaning unit includes cavity and this practicality is new
The bearing base 1 of type, bearing base 1 are arranged in cavity.The precleaning unit can be used for the prerinse of workpiece to be processed 2.
Precleaning unit provided by the utility model, it can be subtracted using the first recess 11 of bearing base 1 of the present utility model
The fringe field of weak workpiece to be processed 2, the etch rate at the edge of workpiece to be processed 1 is reduced, effectively increases workpiece to be processed 2
Etching homogeneity.In addition, the setting of the second recess 12 can weaken the voltage in the region of the second recess 12, in can effectively reducing
The ion energy of heart district domain attack workpiece to be processed reduces the etch rate to the central area of workpiece to be processed 2, so as to effectively carry
The high etching homogeneity of workpiece to be processed 2.
Although some specific embodiments of the present utility model are described in detail by example, this area
It is to be understood by the skilled artisans that example above merely to illustrate, rather than in order to limit the scope of the utility model.
It should be appreciated by those skilled in the art can implement in the case where not departing from the scope of the utility model and spirit to more than
Example is modified.The scope of the utility model is defined by the following claims.
Claims (13)
1. a kind of bearing base, for carrying workpiece to be processed, it is characterised in that recessed formed with first on the bearing base
Portion, the workpiece to be processed are contained in first recess；
The bottom wall of first recess is provided with the second recess, and second recess is used to reduce the workpiece to be processed center
The etch rate in domain.
2. bearing base according to claim 1, it is characterised in that first recess, second recess with it is described
Bearing base is arranged concentrically.
3. bearing base according to claim 1, it is characterised in that first recess is opened in the bearing base
On loading end.
4. bearing base according to claim 3, it is characterised in that the diameter of first recess is more than described to be processed
The diameter of workpiece, and the difference range of the two diameter is 1mm-6mm, the span of the depth of first recess is 0.3mm-
1.5mm。
5. bearing base according to claim 1, it is characterised in that the area of the opening of second recess is treated to be described
The 40%-95% of the surface area of workpieces processing, the span of the depth of second recess is 0.1mm-0.5mm.
6. bearing base according to claim 1, it is characterised in that the bearing base is provided with for described to be processed
The through hole of the support needle lifting of workpiece, the radial distance of the through hole and the edge of the workpiece to be processed are not less than 10mm.
7. bearing base according to claim 1, it is characterised in that it is recessed that described first is not provided with the bearing base
The surface in portion is provided with ceramic layer.
8. bearing base according to claim 1, it is characterised in that on the surface of first recess and the second recess
Provided with anode oxide film.
9. according to claim a kind of bearing base, it is characterised in that the fringe region of the bearing base is provided with medium
Ring, the loading end of the internal perisporium of the dielectric ring and the bearing base form first recess.
10. bearing base according to claim 9, it is characterised in that the internal diameter of the dielectric ring is more than described to be processed
The diameter of workpiece, and the difference range of the two diameter is 2mm-4mm, the Thickness scope of the dielectric ring is 3mm-5mm.
11. bearing base according to claim 9, it is characterised in that the bearing base also includes keeper, described fixed
The radial fit of position part and the bearing base, for making the dielectric ring be positioned at the bearing base.
12. bearing base according to claim 11, it is characterised in that the keeper and both dielectric rings one
Shaping.
13. a kind of precleaning unit, it is characterised in that including the carrying base described in cavity and any one of claim 1 to 12
Seat, the bearing base are arranged in the cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720585516.6U CN206907751U (en) | 2017-05-24 | 2017-05-24 | A kind of bearing base and precleaning unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720585516.6U CN206907751U (en) | 2017-05-24 | 2017-05-24 | A kind of bearing base and precleaning unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206907751U true CN206907751U (en) | 2018-01-19 |
Family
ID=61289629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720585516.6U Active CN206907751U (en) | 2017-05-24 | 2017-05-24 | A kind of bearing base and precleaning unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206907751U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018214243A1 (en) * | 2017-05-24 | 2018-11-29 | 北京北方华创微电子装备有限公司 | Bearing base and pre-cleaning device |
| CN111816604A (en) * | 2020-08-18 | 2020-10-23 | 北京智创芯源科技有限公司 | Wafer etching method |
-
2017
- 2017-05-24 CN CN201720585516.6U patent/CN206907751U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018214243A1 (en) * | 2017-05-24 | 2018-11-29 | 北京北方华创微电子装备有限公司 | Bearing base and pre-cleaning device |
| CN108962810A (en) * | 2017-05-24 | 2018-12-07 | 北京北方华创微电子装备有限公司 | A kind of bearing base and precleaning unit |
| CN111816604A (en) * | 2020-08-18 | 2020-10-23 | 北京智创芯源科技有限公司 | Wafer etching method |
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