WO2018214243A1 - Bearing base and pre-cleaning device - Google Patents

Bearing base and pre-cleaning device Download PDF

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Publication number
WO2018214243A1
WO2018214243A1 PCT/CN2017/091631 CN2017091631W WO2018214243A1 WO 2018214243 A1 WO2018214243 A1 WO 2018214243A1 CN 2017091631 W CN2017091631 W CN 2017091631W WO 2018214243 A1 WO2018214243 A1 WO 2018214243A1
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WIPO (PCT)
Prior art keywords
recess
workpiece
carrier base
processed
base according
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PCT/CN2017/091631
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French (fr)
Chinese (zh)
Inventor
常大磊
陈鹏
赵梦欣
李冬冬
李萌
刘菲菲
刘建生
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北京北方华创微电子装备有限公司
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Publication of WO2018214243A1 publication Critical patent/WO2018214243A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to the field of plasma equipment, and more particularly to a carrier base and a pre-cleaning device.
  • Plasma equipment is widely used in manufacturing fields such as semiconductors, solar cells, and flat panel displays.
  • Common plasma devices include capacitively coupled plasma (CCP), Inductively Coupled Plasma (ICP), and Electron Cyclotron Resonance (ECR) types of plasma processing equipment.
  • CCP capacitively coupled plasma
  • ICP Inductively Coupled Plasma
  • ECR Electron Cyclotron Resonance
  • These plasma devices are generally available in plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), and plasma enhanced chemical vapor deposition (PECVD) processes. Used in.
  • the physical vapor deposition process is one of the most widely used thin film preparation techniques in the semiconductor industry. Before physical vapor deposition, degas and preclean processes are generally required.
  • the degassing process is to remove the substrate from the degassing chamber to a certain temperature to remove water vapor and other volatile impurities adsorbed on the substrate.
  • the pre-cleaning process is to excite a low-pressure reaction gas (a common gas such as argon) into a plasma by the action of radio frequency power, and the plasma contains a large number of active groups such as electrons, ions and excited atoms.
  • the ions acquire sufficient energy in the RF electric field to bombard the surface of the substrate to remove residues and metal oxides from the surface and at the bottom of the trench.
  • the substrate stage which usually carries the substrate is a simple planar disk structure
  • the base is made The edge etch rate of the sheet is faster; on the other hand, the distribution of plasma density tends to be radial
  • the unevenness, and generally the plasma density in the central region of the substrate stage, is higher, resulting in a faster etch rate for the central region of the substrate.
  • the reason for the two aspects is that the etching uniformity of the whole substrate is poor, which in turn affects the process effect.
  • the invention aims to at least solve one of the technical problems existing in the prior art, and proposes a bearing base and a pre-cleaning device, which can not only weaken the fringe electric field of the workpiece to be processed, thereby reducing the treatment
  • the etching rate of the edge of the workpiece is processed, and the voltage of the central region is weakened, thereby effectively reducing the ion energy of the central region attacking the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece to be processed, thereby effectively improving the etching uniformity of the workpiece to be processed. Sex, get better process results.
  • a carrier base for carrying a workpiece to be processed, and a first recess is formed on the carrier base, and the workpiece to be processed can be accommodated in the first recess;
  • a second recess is formed in the bottom wall of the first recess, and the second recess is used to reduce the etching rate of the central region of the workpiece to be processed.
  • the first recess and the second recess are concentrically arranged with the carrier base.
  • the first recess is formed on a bearing surface of the carrier base.
  • the diameter of the first recess is larger than the diameter of the workpiece to be processed, and the difference between the diameters of the two recesses ranges from 1 mm to 6 mm, and the depth of the first recess ranges from 0.3 mm to 1.5 mm.
  • the area of the opening of the second recess is 40% to 95% of the surface area of the workpiece to be processed, and the depth of the second recess ranges from 0.1 mm to 0.5 mm.
  • the bearing base is provided with a through hole for providing a moving passage for the supporting needle of the workpiece to be processed, and the radial distance between the through hole and the edge of the workpiece to be processed is not less than 10 mm.
  • a surface of the carrier base not provided with the first recess is provided with a ceramic layer.
  • the surfaces of the first concave portion and the second concave portion are each provided with an anodized film.
  • the edge region of the carrier base is provided with a medium ring, and an inner peripheral wall of the medium ring forms a sidewall of the first recess, and a bearing surface of the carrier base forms a bottom wall of the first recess.
  • the inner diameter of the medium ring is larger than the diameter of the workpiece to be processed, and the difference between the diameters of the two is in the range of 2 mm to 4 mm, and the thickness of the dielectric ring ranges from 3 mm to 5 mm.
  • the carrier base further includes a positioning member, and the positioning member cooperates with the bearing base in a radial direction for positioning the medium ring on the carrier base.
  • the positioning member and the medium ring are integrally formed.
  • the present invention also provides a pre-cleaning device comprising a cavity and a carrier base provided by any of the foregoing aspects of the present invention, the carrier base being disposed in the cavity.
  • the carrier base of the present invention is provided with a first recess and a second recess disposed on the bottom wall of the first recess, the first recess can weaken the electric field of the edge of the workpiece to be processed, and reduce the etching rate of the edge of the workpiece to be processed;
  • the setting of the concave portion can weaken the voltage in the central region where the second concave portion is located, effectively reduce the ion energy of attacking the central region of the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece to be processed, and the effect of the two can effectively improve
  • the etch uniformity of the workpiece to be processed gives better process results.
  • the pre-cleaning device of the present invention can not only weaken the fringe electric field of the workpiece to be processed, but also reduce the etching rate of the edge of the workpiece to be processed, and can reduce the voltage in the central region of the second concave portion by using the above-mentioned bearing base.
  • the ion energy of the central region of the workpiece to be processed is effectively reduced, thereby reducing the etching rate of the central region of the workpiece to be processed, thereby effectively improving the etching uniformity of the workpiece to be processed, and obtaining better process results.
  • FIG. 1 is a top plan view of a carrier base in accordance with an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the carrier base of FIG. 1 taken along the line A-A.
  • FIG 3 is a cross-sectional view of a carrier base in accordance with another embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing the principle of realizing the technical effect of the bearing base of the present invention.
  • the present invention provides a carrier base.
  • the carrier base is used to carry a workpiece to be processed.
  • the workpiece to be processed is usually a substrate.
  • a first recess is formed on the carrier base for receiving the workpiece to be processed.
  • the workpiece to be processed can be confined in the first recess, thereby avoiding a large displacement of the workpiece to be processed on the carrier base and affecting the transmission of the workpiece to be processed.
  • the first recess can weaken the fringe electric field of the workpiece to be processed to avoid the edge of the workpiece to be processed The etch rate is too fast.
  • a second recess is provided on the bottom wall of the first recess.
  • the second recess serves to reduce the etch rate of the central region of the workpiece to be processed.
  • the density of the plasma 3 in the central region is high, resulting in a faster etching rate of the central region of the workpiece 2 to be processed corresponding thereto.
  • the plasma 3 can be bombarded with the ion energy of the central region of the workpiece 2 to be processed, thereby reducing the etching rate of the central region of the workpiece 2 to be processed, as shown in FIG.
  • the specific principle is as follows: There is a DC bias voltage V DC between the plasma 3 and the carrier base 1. Due to the presence of the second recess 12, there is a capacitance C1 between the workpiece 2 to be processed and the carrier base 1, the thickness of the capacitor C1 is d; there is a sheath capacitance C2 between the plasma 3 and the workpiece 2 to be processed, the sheath The thickness of the capacitor C2 is S m , and the capacitor C1 is connected in series with the sheath capacitor C2.
  • first recess 11 and the second recess 12 are concentrically arranged with the carrier base 1 .
  • the first recess 11 , the second recess 12 and the carrier base 1 are arranged concentrically, which is advantageous for further improving the etching uniformity of the workpiece 2 to be processed.
  • the diameter of the bearing surface of the bearing base 1 is larger than the diameter of the first recess 11 , and the diameter difference between the two ranges from 10 mm to 30 mm. In this way, it is possible to ensure that the first recess 11 is conveniently and firmly formed on the bearing surface of the carrier base 1 without the area of the carrier base 1 Too large, which can save the cost of manufacturing, use and storage.
  • the first recess 11 can be formed directly on the bearing surface of the carrier base 1 , for example, the first recess 11 is opened on the bearing surface of the carrier base 1 .
  • the bearing surface of the carrier base 1 here refers to the surface of the carrier base 1 for carrying the workpiece 2 to be processed.
  • the diameter of the first recess 11 is larger than the diameter of the workpiece 2 to be processed, and the difference between the diameters of the two ranges from 1 mm to 6 mm.
  • the depth of the first recess 11 ranges from 0.3 mm to 1.5 mm.
  • the size of the first recess 11 is limited to facilitate the pick-and-place of the workpiece 2 to be processed, and to better limit the workpiece 2 to be processed in the first recess 11 and to further improve the workpiece 2 to be processed. Etching uniformity.
  • the first recess 11 may have a diameter of 204 mm, and the first recess 11 may have a depth of 0.5 mm.
  • the area of the opening of the second recess 12 is 40% to 95% of the surface area of the workpiece 2 to be processed. Further, the area of the opening of the second recess 12 is 75% to 95% of the surface area of the workpiece 2 to be processed, so that the etching rate of the central portion of the workpiece 2 to be processed can be more effectively reduced.
  • the depth of the second recess 12 ranges from 0.1 mm to 0.5 mm. The limitation of the size of the second recess 12 described above is advantageous for more effectively reducing the etching rate of the central region of the workpiece 2 to be processed, and is advantageous for further improving the etching uniformity of the workpiece 2 to be processed.
  • the second recess 12 may have a diameter of 180 mm, and the second recess 12 may have a depth of 0.2 mm.
  • the bearing base 1 is provided with a through hole 13 for providing a moving passage for the supporting needle of the workpiece 2 to be processed, and the supporting needle can move up and down in the through hole 13 to drive the workpiece to be processed. 2 rises or falls.
  • the radial distance between the through hole 13 and the edge of the workpiece 2 to be processed is not less than 10 mm, so that plasma can be prevented from entering the through hole 13 and causing an abnormal etching rate; and the process of raising and lowering the needle can be ensured.
  • the workpiece 2 is machined for stable support.
  • a surface of the carrier base 1 on which the first recess 11 is not disposed is provided with a ceramic layer.
  • the ceramic layer serves to protect the carrier base 1 and to avoid contamination of the workpiece 2 to be processed. Thickness of ceramic layer It can be set according to actual needs, for example, a ceramic layer of 0.2 mm is sprayed on the bearing surface of the carrier base 1.
  • an anodized film is disposed on the surfaces of the first recess 11 and the second recess 12. That is, an anodized film is provided at least on the side walls of the first recess 11 and the side walls and the bottom wall of the second recess 12.
  • the anodized film can be formed by anodizing the first recess 11 and the second recess 12.
  • the anodized film is dense and non-conductive, has good wear resistance, can effectively protect the first recess 11 and the second recess 12, and avoids contamination of the workpiece 2 to be processed due to wear of the first recess 11 and the second recess 12.
  • the first recess 11 may be formed by a construction member such as a media ring and a bearing surface of the carrier base.
  • the edge region of the carrier base 1 is provided with a dielectric ring 14.
  • the inner peripheral wall of the medium ring 14 and the bearing surface of the carrier base 1 form a first recess 11 , that is, the inner peripheral wall of the medium ring 14 forms a side wall of the first recess 11 , and the bearing surface of the carrier base 1 forms the first recess 11 .
  • a second recess 12 is provided on the bearing surface of the carrier base 1, that is, on the bottom wall of the first recess 11.
  • the dielectric ring 14 can optionally be a quartz ring.
  • the inner diameter of the medium ring 14 is larger than the diameter of the workpiece 2 to be processed, and the difference between the diameters of the two ranges from 2 mm to 4 mm.
  • the thickness H of the dielectric ring 14 ranges from 3 mm to 5 mm.
  • the thickness of the dielectric ring 14 is higher than the thickness of the workpiece to be processed, which is advantageous for improving the fringe electric field of the first recess 11 and thereby improving the etching uniformity of the workpiece 2 to be processed.
  • the carrier base 1 further includes a positioning member 15 .
  • the positioning member 15 is radially engaged with the carrier base 1 for positioning the media ring 14 on the carrier base 1.
  • the positioning member 15 may be, for example, a pin or a bolt, and the medium ring 14 is positioned on the carrier base 1 by pins or bolts.
  • the positioning member 15 is configured to be engageable with the edge of the carrier base 1, and the media ring 14 is positioned on the carrier base 1 by the engagement of the positioning member 15 with the edge of the carrier base 1.
  • the positioning member 15 may be a protrusion on the surface of the dielectric ring 14, and the carrier base 1 is provided with a groove matching the protrusion, and the medium ring 14 is positioned on the bearing by the cooperation of the protrusion and the groove. On the base 1.
  • positioning member 15 and the medium ring 14 are integrally formed. Positioning member 15 and media ring The integral molding of 14 facilitates the strength of the media ring 14 and the positioning member 15, as well as the assembly and maintenance of the carrier base 1.
  • the invention further provides a pre-cleaning device.
  • the pre-cleaning device comprises a cavity and a carrier base 1 provided by the aforementioned embodiment of the invention, and the carrier base 1 is disposed in the cavity. This pre-cleaning device can be used for pre-cleaning of the workpiece 2 to be processed.
  • the pre-cleaning device provided by the present invention adopts the carrier base 1 provided by the foregoing embodiment of the present invention.
  • the edge electric field of the workpiece 2 to be processed can be weakened, and the edge of the workpiece 1 to be processed can be reduced.
  • the etching rate is such that the etching uniformity of the workpiece 2 to be processed can be effectively improved.
  • the voltage in the region where the second recess 12 is located can be weakened, thereby effectively reducing the ion energy of the central region of the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece 2 to be processed, thereby The etching uniformity of the workpiece 2 to be processed can be effectively improved.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Rolling Contact Bearings (AREA)

Abstract

A bearing base (1) and a pre-cleaning device. The bearing base (1) is used for bearing a workpiece to be processed (2); a first recessed portion (11) is formed on the bearing base (1); the workpiece to be processed (2) can be received in the first recessed portion (11); the bottom wall of the first recessed portion (11) is provided with a second recessed portion (12); the second recessed portion (12) is used for reducing an etching speed of a central area of the workpiece to be processed. The bearing base (1) and the pre-cleaning device not only can weaken an edge electric field of the workpiece to be processed (2), but also can weaken voltages at the central area, such that etching uniformity of the workpiece to be processed (2) can be effectively improved, and a better process result can be obtained.

Description

一种承载基座及预清洗装置Carrying base and pre-cleaning device 技术领域Technical field
本发明涉及等离子体设备领域，更具体地，涉及一种承载基座及预清洗装置。The present invention relates to the field of plasma equipment, and more particularly to a carrier base and a pre-cleaning device.
背景技术Background technique
等离子体设备广泛应用于半导体、太阳能电池、平板显示等制造领域中。常见的等离子体设备包括电容耦合等离子体(Capacitively Coupled Plasma，CCP)、电感耦合等离子体(Inductively Coupled Plasma，ICP)以及电子回旋共振等离子体(Electron Cyclotron Resonance，ECR)等类型的等离子体处理设备。这些等离子体设备通常可在等离子体刻蚀、物理气相沉积(Physical Vapor Deposition，PVD)、化学气相沉积(Chemical Vapor Deposition，CVD)以及增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)等加工工艺中使用。Plasma equipment is widely used in manufacturing fields such as semiconductors, solar cells, and flat panel displays. Common plasma devices include capacitively coupled plasma (CCP), Inductively Coupled Plasma (ICP), and Electron Cyclotron Resonance (ECR) types of plasma processing equipment. These plasma devices are generally available in plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), and plasma enhanced chemical vapor deposition (PECVD) processes. Used in.
物理气相沉积工艺是半导体工业中最广为使用的一类薄膜制备技术，在进行物理气相沉积前，一般需要去气工艺(Degas)和预清洗工艺(Preclean)。去气工艺是在去气腔，将基片加热至一定温度，以去除基片上吸附的水蒸气及其它易挥发杂质。预清洗工艺则是通过射频功率的作用，将低气压的反应气体(常见气体如，氩气)激发为等离子体，等离子体中含有大量的电子、离子和激发态的原子等活性基团，其中的离子在射频电场中获得足够的能量，对基片表面进行轰击，从而将表面以及沟槽底部的残留物和金属氧化物清除。The physical vapor deposition process is one of the most widely used thin film preparation techniques in the semiconductor industry. Before physical vapor deposition, degas and preclean processes are generally required. The degassing process is to remove the substrate from the degassing chamber to a certain temperature to remove water vapor and other volatile impurities adsorbed on the substrate. The pre-cleaning process is to excite a low-pressure reaction gas (a common gas such as argon) into a plasma by the action of radio frequency power, and the plasma contains a large number of active groups such as electrons, ions and excited atoms. The ions acquire sufficient energy in the RF electric field to bombard the surface of the substrate to remove residues and metal oxides from the surface and at the bottom of the trench.
由于通常承载基片的基片台为简单的平面圆盘结构，在预清洗工艺中，一方面，由于基片台的尺寸与基片相近，且基片台的边缘电场较强，会使得基片的边缘刻蚀速率偏快；另一方面，由于等离子体密度的分布往往在径向 不均匀，且通常为基片台中心区域的等离子密度较高，从而导致对基片中心区域的刻蚀速率偏快。综上两方面的原因，最终导致对基片整体的刻蚀均匀性较差，进而影响工艺效果。Since the substrate stage which usually carries the substrate is a simple planar disk structure, in the pre-cleaning process, on the one hand, since the size of the substrate stage is close to the substrate, and the edge electric field of the substrate stage is strong, the base is made The edge etch rate of the sheet is faster; on the other hand, the distribution of plasma density tends to be radial The unevenness, and generally the plasma density in the central region of the substrate stage, is higher, resulting in a faster etch rate for the central region of the substrate. In summary, the reason for the two aspects is that the etching uniformity of the whole substrate is poor, which in turn affects the process effect.
发明内容Summary of the invention
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种承载基座及预清洗装置，该承载基座及预清洗装置不仅可减弱待加工工件的边缘电场，从而降低对待加工工件边缘的刻蚀速率，而且可减弱中心区域的电压，有效降低中心区域攻击待加工工件的离子能量，从而降低对待加工工件中心区域的刻蚀速率，进而有效提高待加工工件的刻蚀均匀性，获得更佳的工艺结果。The invention aims to at least solve one of the technical problems existing in the prior art, and proposes a bearing base and a pre-cleaning device, which can not only weaken the fringe electric field of the workpiece to be processed, thereby reducing the treatment The etching rate of the edge of the workpiece is processed, and the voltage of the central region is weakened, thereby effectively reducing the ion energy of the central region attacking the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece to be processed, thereby effectively improving the etching uniformity of the workpiece to be processed. Sex, get better process results.
为实现本发明的目的而提供一种承载基座，用于承载待加工工件，所述承载基座上形成有第一凹部，所述待加工工件能够容纳于所述第一凹部中；所述第一凹部的底壁上开设有第二凹部，所述第二凹部用于降低所述待加工工件中心区域的刻蚀速率。In order to achieve the object of the present invention, a carrier base is provided for carrying a workpiece to be processed, and a first recess is formed on the carrier base, and the workpiece to be processed can be accommodated in the first recess; A second recess is formed in the bottom wall of the first recess, and the second recess is used to reduce the etching rate of the central region of the workpiece to be processed.
其中，所述第一凹部、所述第二凹部与所述承载基座同心设置。The first recess and the second recess are concentrically arranged with the carrier base.
其中，所述第一凹部开设于所述承载基座的承载面上。The first recess is formed on a bearing surface of the carrier base.
其中，所述第一凹部的直径大于所述待加工工件的直径，且二者直径的差值范围为1mm至6mm，所述第一凹部的深度的取值范围为0.3mm至1.5mm。The diameter of the first recess is larger than the diameter of the workpiece to be processed, and the difference between the diameters of the two recesses ranges from 1 mm to 6 mm, and the depth of the first recess ranges from 0.3 mm to 1.5 mm.
其中，所述第二凹部的开口的面积为所述待加工工件的表面积的40％至95％，所述第二凹部的深度的取值范围为0.1mm至0.5mm。The area of the opening of the second recess is 40% to 95% of the surface area of the workpiece to be processed, and the depth of the second recess ranges from 0.1 mm to 0.5 mm.
其中，所述承载基座上设有用于给待加工工件的支撑针提供移动通道的通孔，所述通孔与所述待加工工件的边缘的径向距离不小于10mm。Wherein, the bearing base is provided with a through hole for providing a moving passage for the supporting needle of the workpiece to be processed, and the radial distance between the through hole and the edge of the workpiece to be processed is not less than 10 mm.
其中，所述承载基座上的未设置有所述第一凹部的表面设有陶瓷层。Wherein, a surface of the carrier base not provided with the first recess is provided with a ceramic layer.
其中，所述第一凹部和第二凹部的表面均设有阳极氧化膜。 Wherein, the surfaces of the first concave portion and the second concave portion are each provided with an anodized film.
其中，所述承载基座的边缘区域设有介质环，所述介质环的内周壁形成所述第一凹部的侧壁，所述承载基座的承载面形成所述第一凹部的底壁。The edge region of the carrier base is provided with a medium ring, and an inner peripheral wall of the medium ring forms a sidewall of the first recess, and a bearing surface of the carrier base forms a bottom wall of the first recess.
其中，所述介质环的内径大于所述待加工工件的直径，且二者直径的差值范围为2mm至4mm，所述介质环的厚度取值范围为3mm至5mm。Wherein, the inner diameter of the medium ring is larger than the diameter of the workpiece to be processed, and the difference between the diameters of the two is in the range of 2 mm to 4 mm, and the thickness of the dielectric ring ranges from 3 mm to 5 mm.
其中，所述承载基座还包括定位件，所述定位件与所述承载基座的径向配合，用于使所述介质环定位在所述承载基座上。The carrier base further includes a positioning member, and the positioning member cooperates with the bearing base in a radial direction for positioning the medium ring on the carrier base.
其中，所述定位件与所述介质环二者一体成型。Wherein, the positioning member and the medium ring are integrally formed.
作为另一个方面，本发明还提供一种预清洗装置，其包括腔体和本发明前述任一方案所提供的承载基座，所述承载基座设置于所述腔体中。In another aspect, the present invention also provides a pre-cleaning device comprising a cavity and a carrier base provided by any of the foregoing aspects of the present invention, the carrier base being disposed in the cavity.
本发明具有以下有益效果：The invention has the following beneficial effects:
本发明的承载基座设有第一凹部以及设置于第一凹部底壁的第二凹部，该第一凹部可减弱待加工工件的边缘电场，降低待加工工件边缘的刻蚀速率；该第二凹部的设置可减弱第二凹部所在中心区域内的电压，有效降低攻击待加工工件的中心区域的离子能量，从而降低待加工工件的中心区域的刻蚀速率，通过二者的作用，可有效提高待加工工件的刻蚀均匀性，获得更佳的工艺结果。The carrier base of the present invention is provided with a first recess and a second recess disposed on the bottom wall of the first recess, the first recess can weaken the electric field of the edge of the workpiece to be processed, and reduce the etching rate of the edge of the workpiece to be processed; The setting of the concave portion can weaken the voltage in the central region where the second concave portion is located, effectively reduce the ion energy of attacking the central region of the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece to be processed, and the effect of the two can effectively improve The etch uniformity of the workpiece to be processed gives better process results.
本发明的预清洗装置，其通过采用上述承载基座，不仅可减弱待加工工件的边缘电场，从而降低对待加工工件边缘的刻蚀速率，而且可减弱第二凹部所在中心区域内的电压，可有效降低攻击待加工工件的中心区域的离子能量，从而降低对待加工工件的中心区域的刻蚀速率，进而有效提高待加工工件的刻蚀均匀性，获得更佳的工艺结果。The pre-cleaning device of the present invention can not only weaken the fringe electric field of the workpiece to be processed, but also reduce the etching rate of the edge of the workpiece to be processed, and can reduce the voltage in the central region of the second concave portion by using the above-mentioned bearing base. The ion energy of the central region of the workpiece to be processed is effectively reduced, thereby reducing the etching rate of the central region of the workpiece to be processed, thereby effectively improving the etching uniformity of the workpiece to be processed, and obtaining better process results.
附图说明DRAWINGS
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。The accompanying drawings, which are incorporated in FIG
图1为本发明一实施例中承载基座的俯视图。 1 is a top plan view of a carrier base in accordance with an embodiment of the present invention.
图2为图1所述承载基座沿A-A向的剖示图。2 is a cross-sectional view of the carrier base of FIG. 1 taken along the line A-A.
图3为本发明另一实施例中承载基座的剖示图。3 is a cross-sectional view of a carrier base in accordance with another embodiment of the present invention.
图4为本发明承载基座的技术效果实现的原理示意图。FIG. 4 is a schematic diagram showing the principle of realizing the technical effect of the bearing base of the present invention.
图中标示如下：The figures are as follows:
承载基座-1，第一凹部-11，第二凹部-12，通孔-13，介质环-14，定位件-15，待加工工件-2，等离子体-3。Carrying base-1, first recess-11, second recess-12, through hole-13, medium ring-14, positioning member-15, workpiece-2 to be processed, plasma-3.
具体实施方式detailed description
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。Various exemplary embodiments of the present invention will now be described in detail with reference to the drawings. It should be noted that the relative arrangement of the components and steps, numerical expressions and numerical values set forth in the embodiments are not intended to limit the scope of the invention unless otherwise specified.
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。The following description of the at least one exemplary embodiment is merely illustrative and is in no way
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。Techniques, methods and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail, but the techniques, methods and apparatus should be considered as part of the specification, where appropriate.
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。In all of the examples shown and discussed herein, any specific values are to be construed as illustrative only and not as a limitation. Thus, other examples of the exemplary embodiments may have different values.
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。It should be noted that similar reference numerals and letters indicate similar items in the following figures, and therefore, once an item is defined in one figure, it is not required to be further discussed in the subsequent figures.
为了解决预清洗时基片的刻蚀均匀性较差的问题，本发明提供了一种承载基座。In order to solve the problem of poor etching uniformity of the substrate during pre-cleaning, the present invention provides a carrier base.
该承载基座用于承载待加工工件。该待加工工件通常为基片。承载基座上形成有第一凹部，用于容纳待加工工件。待加工工件可限制在第一凹部内，从而避免待加工工件在承载基座上出现较大的移位，影响到待加工工件的传输。此外，第一凹部可减弱待加工工件的边缘电场，以避免待加工工件边缘 的刻蚀速率过快。The carrier base is used to carry a workpiece to be processed. The workpiece to be processed is usually a substrate. A first recess is formed on the carrier base for receiving the workpiece to be processed. The workpiece to be processed can be confined in the first recess, thereby avoiding a large displacement of the workpiece to be processed on the carrier base and affecting the transmission of the workpiece to be processed. In addition, the first recess can weaken the fringe electric field of the workpiece to be processed to avoid the edge of the workpiece to be processed The etch rate is too fast.
第一凹部的底壁上设有第二凹部。第二凹部用于降低待加工工件中心区域的刻蚀速率。A second recess is provided on the bottom wall of the first recess. The second recess serves to reduce the etch rate of the central region of the workpiece to be processed.
通常情况下，等离子体3在中心区域的密度较高，导致与其对应的待加工工件2的中心区域的刻蚀速率较快。通过设置第二凹部12可降低等离子体3轰击待加工工件2的中心区域的离子能量，以此降低待加工工件2的中心区域的刻蚀速率，如图4所示。In general, the density of the plasma 3 in the central region is high, resulting in a faster etching rate of the central region of the workpiece 2 to be processed corresponding thereto. By providing the second recess 12, the plasma 3 can be bombarded with the ion energy of the central region of the workpiece 2 to be processed, thereby reducing the etching rate of the central region of the workpiece 2 to be processed, as shown in FIG.
具体原理如下：等离子体3与承载基座1之间存在着直流偏压VDC。由于第二凹部12的存在，相当于待加工工件2与承载基座1之间存在电容C1，该电容C1的厚度为d；等离子体3与待加工工件2之间存在鞘电容C2，该鞘电容C2的厚度为Sm，且电容C1与鞘电容C2串联。根据等离子体鞘层理论可知，鞘电容C2在中心区域的分压VS为
Figure PCTCN2017091631-appb-000001
电容C1在中心区域的分压V1为k·Sm·d，其中，k为与等离子体密度有关的系数。由于VDC＝VS+V1，这样，入射到第二凹部12上方的待加工工件2的离子能量相比于入射到第二凹部12以外的待加工工件2的离子能量降低了V1，且
Figure PCTCN2017091631-appb-000002
从而使得第二凹部12上方的待加工工件2的刻蚀速率变慢。The specific principle is as follows: There is a DC bias voltage V DC between the plasma 3 and the carrier base 1. Due to the presence of the second recess 12, there is a capacitance C1 between the workpiece 2 to be processed and the carrier base 1, the thickness of the capacitor C1 is d; there is a sheath capacitance C2 between the plasma 3 and the workpiece 2 to be processed, the sheath The thickness of the capacitor C2 is S m , and the capacitor C1 is connected in series with the sheath capacitor C2. According to the plasma sheath theory, the partial pressure V S of the sheath capacitance C2 in the central region is
Figure PCTCN2017091631-appb-000001
The partial pressure V 1 of the capacitor C1 in the central region is k·S m ·d, where k is a coefficient related to the plasma density. Since V DC = V S + V 1 , the ion energy of the workpiece 2 to be processed incident on the second recess 12 is reduced by V 1 compared to the ion energy of the workpiece 2 to be processed which is incident outside the second recess 12 , And
Figure PCTCN2017091631-appb-000002
Thereby, the etching rate of the workpiece 2 to be processed above the second recess 12 is slowed down.
可选地，第一凹部11、第二凹部12与承载基座1同心设置。第一凹部11、第二凹部12和承载基座1三者同心设置，有利于进一步地提高待加工工件2的刻蚀均匀性。Optionally, the first recess 11 and the second recess 12 are concentrically arranged with the carrier base 1 . The first recess 11 , the second recess 12 and the carrier base 1 are arranged concentrically, which is advantageous for further improving the etching uniformity of the workpiece 2 to be processed.
具体实施时，可选地，承载基座1的承载面的直径大于第一凹部11的直径，且二者的直径差值范围为10mm-30mm。这样，既能够保证在承载基座1的承载面上方便且牢固地形成第一凹部11；又不会使承载基座1的面积 过大，从而可以节约制造、使用及存放的成本。In a specific implementation, optionally, the diameter of the bearing surface of the bearing base 1 is larger than the diameter of the first recess 11 , and the diameter difference between the two ranges from 10 mm to 30 mm. In this way, it is possible to ensure that the first recess 11 is conveniently and firmly formed on the bearing surface of the carrier base 1 without the area of the carrier base 1 Too large, which can save the cost of manufacturing, use and storage.
如图1所示，该第一凹部11可直接在承载基座1上的承载面上形成，例如，将第一凹部11开设于承载基座1的承载面上。该处承载基座1的承载面是指承载基座1用于承载待加工工件2的表面。As shown in FIG. 1 , the first recess 11 can be formed directly on the bearing surface of the carrier base 1 , for example, the first recess 11 is opened on the bearing surface of the carrier base 1 . The bearing surface of the carrier base 1 here refers to the surface of the carrier base 1 for carrying the workpiece 2 to be processed.
进一步地，第一凹部11的直径大于待加工工件2的直径，且二者直径的差值范围为1mm-6mm。第一凹部11的深度的取值范围为0.3mm-1.5mm。上述第一凹部11的尺寸的限定，既便于待加工工件2的取放，又能更好地将待加工工件2限制在第一凹部11内，并且还有利于进一步地提高待加工工件2的刻蚀均匀性。Further, the diameter of the first recess 11 is larger than the diameter of the workpiece 2 to be processed, and the difference between the diameters of the two ranges from 1 mm to 6 mm. The depth of the first recess 11 ranges from 0.3 mm to 1.5 mm. The size of the first recess 11 is limited to facilitate the pick-and-place of the workpiece 2 to be processed, and to better limit the workpiece 2 to be processed in the first recess 11 and to further improve the workpiece 2 to be processed. Etching uniformity.
以承载直径为200mm的基片为例，具体实施时，第一凹部11的直径可为204mm，第一凹部11的深度可为0.5mm。Taking a substrate having a diameter of 200 mm as an example, in a specific implementation, the first recess 11 may have a diameter of 204 mm, and the first recess 11 may have a depth of 0.5 mm.
可选地，第二凹部12的开口的面积为待加工工件2的表面积的40％-95％。进一步地，第二凹部12的开口的面积为待加工工件2的表面积的75％-95％，从而能够更有效地降低待加工工件2的中心区域的刻蚀速率。第二凹部12的深度的取值范围为0.1mm-0.5mm。上述第二凹部12的尺寸的限定有利于更有效地降低待加工工件2的中心区域的刻蚀速率，并且有利于进一步地提高待加工工件2的刻蚀均匀性。Alternatively, the area of the opening of the second recess 12 is 40% to 95% of the surface area of the workpiece 2 to be processed. Further, the area of the opening of the second recess 12 is 75% to 95% of the surface area of the workpiece 2 to be processed, so that the etching rate of the central portion of the workpiece 2 to be processed can be more effectively reduced. The depth of the second recess 12 ranges from 0.1 mm to 0.5 mm. The limitation of the size of the second recess 12 described above is advantageous for more effectively reducing the etching rate of the central region of the workpiece 2 to be processed, and is advantageous for further improving the etching uniformity of the workpiece 2 to be processed.
以承载直径为200mm的基片为例，具体实施时，第二凹部12的直径可为180mm，第二凹部12的深度可为0.2mm。For example, in the case of carrying a substrate having a diameter of 200 mm, the second recess 12 may have a diameter of 180 mm, and the second recess 12 may have a depth of 0.2 mm.
可选地，如图2所示，承载基座1上设有用于给待加工工件2的支撑针提供移动通道的通孔13，支撑针可在通孔13内上下移动，以带动待加工工件2上升或下降。通孔13与待加工工件2的边缘的径向距离不小于10mm，这样，既可以避免等离子体进入通孔13内，引起刻蚀速率异常；又能够保证在升针和降针的过程中对待加工工件2进行稳固的支撑。Optionally, as shown in FIG. 2, the bearing base 1 is provided with a through hole 13 for providing a moving passage for the supporting needle of the workpiece 2 to be processed, and the supporting needle can move up and down in the through hole 13 to drive the workpiece to be processed. 2 rises or falls. The radial distance between the through hole 13 and the edge of the workpiece 2 to be processed is not less than 10 mm, so that plasma can be prevented from entering the through hole 13 and causing an abnormal etching rate; and the process of raising and lowering the needle can be ensured. The workpiece 2 is machined for stable support.
可选地，承载基座1上未设置有第一凹部11的表面设有陶瓷层。陶瓷层可起到保护承载基座1以及避免污染待加工工件2的作用。陶瓷层的厚度 可根据实际需求设置，例如，在承载基座1的承载面上喷涂0.2mm的陶瓷层。Optionally, a surface of the carrier base 1 on which the first recess 11 is not disposed is provided with a ceramic layer. The ceramic layer serves to protect the carrier base 1 and to avoid contamination of the workpiece 2 to be processed. Thickness of ceramic layer It can be set according to actual needs, for example, a ceramic layer of 0.2 mm is sprayed on the bearing surface of the carrier base 1.
可选地，第一凹部11和第二凹部12的表面上均设有阳极氧化膜。也即是，至少在第一凹部11的侧壁以及第二凹部12的侧壁和底壁上设有阳极氧化膜。Optionally, an anodized film is disposed on the surfaces of the first recess 11 and the second recess 12. That is, an anodized film is provided at least on the side walls of the first recess 11 and the side walls and the bottom wall of the second recess 12.
阳极氧化膜可通过对第一凹部11和第二凹部12进行阳极氧化处理形成。阳极氧化膜致密不导电，耐磨性能好，可有效地保护第一凹部11和第二凹部12，以及避免因第一凹部11和第二凹部12磨损而污染待加工工件2。The anodized film can be formed by anodizing the first recess 11 and the second recess 12. The anodized film is dense and non-conductive, has good wear resistance, can effectively protect the first recess 11 and the second recess 12, and avoids contamination of the workpiece 2 to be processed due to wear of the first recess 11 and the second recess 12.
可选地，第一凹部11可由例如为介质环的构造件和承载基座的承载面共同形成。如图3所述，承载基座1的边缘区域设有介质环14。介质环14的内周壁与承载基座1的承载面形成第一凹部11，即，介质环14的内周壁形成第一凹部11的侧壁，承载基座1的承载面形成第一凹部11的底面。并且，在承载基座1的承载面上，也即是在第一凹部11的底壁上设有第二凹部12。介质环14可选地可为石英环。Alternatively, the first recess 11 may be formed by a construction member such as a media ring and a bearing surface of the carrier base. As shown in FIG. 3, the edge region of the carrier base 1 is provided with a dielectric ring 14. The inner peripheral wall of the medium ring 14 and the bearing surface of the carrier base 1 form a first recess 11 , that is, the inner peripheral wall of the medium ring 14 forms a side wall of the first recess 11 , and the bearing surface of the carrier base 1 forms the first recess 11 . Bottom surface. Further, a second recess 12 is provided on the bearing surface of the carrier base 1, that is, on the bottom wall of the first recess 11. The dielectric ring 14 can optionally be a quartz ring.
可选地，介质环14的内径大于待加工工件2的直径，且二者直径的差值范围为2mm-4mm。介质环14的厚度H的取值范围为3mm-5mm。介质环14的厚度高于待加工工件的厚度，有利于改善第一凹部11的边缘电场，从而提高待加工工件2的刻蚀均匀性。Optionally, the inner diameter of the medium ring 14 is larger than the diameter of the workpiece 2 to be processed, and the difference between the diameters of the two ranges from 2 mm to 4 mm. The thickness H of the dielectric ring 14 ranges from 3 mm to 5 mm. The thickness of the dielectric ring 14 is higher than the thickness of the workpiece to be processed, which is advantageous for improving the fringe electric field of the first recess 11 and thereby improving the etching uniformity of the workpiece 2 to be processed.
可选地，承载基座1还包括定位件15。定位件15与承载基座1的径向配合，用于使介质环14定位在承载基座1上。上述定位件15可例如为销或螺栓等零件，通过销或螺栓将介质环14定位在承载基座1上。或者，定位件15为可与承载基座1的边缘卡合的结构，通过定位件15与承载基座1的边缘的卡合将介质环14定位在承载基座1上。又或者，定位件15可为介质环14的表面上的凸起，承载基座1上设有与该凸起相配合的凹槽，通过凸起和凹槽的配合将介质环14定位在承载基座1上。Optionally, the carrier base 1 further includes a positioning member 15 . The positioning member 15 is radially engaged with the carrier base 1 for positioning the media ring 14 on the carrier base 1. The positioning member 15 may be, for example, a pin or a bolt, and the medium ring 14 is positioned on the carrier base 1 by pins or bolts. Alternatively, the positioning member 15 is configured to be engageable with the edge of the carrier base 1, and the media ring 14 is positioned on the carrier base 1 by the engagement of the positioning member 15 with the edge of the carrier base 1. Alternatively, the positioning member 15 may be a protrusion on the surface of the dielectric ring 14, and the carrier base 1 is provided with a groove matching the protrusion, and the medium ring 14 is positioned on the bearing by the cooperation of the protrusion and the groove. On the base 1.
进一步地，定位件15与介质环14二者一体成型。定位件15和介质环 14一体成型有利于提高介质环14和定位件15的强度，以及便于承载基座1的装配和维修。Further, the positioning member 15 and the medium ring 14 are integrally formed. Positioning member 15 and media ring The integral molding of 14 facilitates the strength of the media ring 14 and the positioning member 15, as well as the assembly and maintenance of the carrier base 1.
本发明进一步地提供了一种预清洗装置。该预清洗装置包括腔体和本发明前述实施例提供的承载基座1，且承载基座1设置于腔体中。该预清洗装置可用于待加工工件2的预清洗。The invention further provides a pre-cleaning device. The pre-cleaning device comprises a cavity and a carrier base 1 provided by the aforementioned embodiment of the invention, and the carrier base 1 is disposed in the cavity. This pre-cleaning device can be used for pre-cleaning of the workpiece 2 to be processed.
本发明提供的预清洗装置采用了本发明前述实施例提供的承载基座1，借助于承载基座1的第一凹部11，可减弱待加工工件2的边缘电场，降低待加工工件1边缘的刻蚀速率，从而能够有效提高待加工工件2的刻蚀均匀性。并且，通过设置第二凹部12，可减弱第二凹部12所在区域内的电压，从而有效降低攻击待加工工件的中心区域的离子能量，进而降低待加工工件2的中心区域的刻蚀速率，因而能够有效提高待加工工件2的刻蚀均匀性。The pre-cleaning device provided by the present invention adopts the carrier base 1 provided by the foregoing embodiment of the present invention. By means of the first recess 11 of the carrier base 1, the edge electric field of the workpiece 2 to be processed can be weakened, and the edge of the workpiece 1 to be processed can be reduced. The etching rate is such that the etching uniformity of the workpiece 2 to be processed can be effectively improved. Moreover, by providing the second recess 12, the voltage in the region where the second recess 12 is located can be weakened, thereby effectively reducing the ion energy of the central region of the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece 2 to be processed, thereby The etching uniformity of the workpiece 2 to be processed can be effectively improved.
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。 While the invention has been described in detail with reference to the preferred embodiments of the present invention, it is understood that It will be appreciated by those skilled in the art that the above embodiments may be modified without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims (13)

  1. 一种承载基座，用于承载待加工工件，其特征在于，所述承载基座上形成有第一凹部，所述待加工工件能够容纳于所述第一凹部中；a carrying base for carrying a workpiece to be processed, wherein the carrying base is formed with a first recess, and the workpiece to be processed can be accommodated in the first recess;
    所述第一凹部的底壁上开设有第二凹部，所述第二凹部用于降低所述待加工工件中心区域的刻蚀速率。A second recess is formed in the bottom wall of the first recess, and the second recess is configured to reduce an etch rate of the central region of the workpiece to be processed.
  2. 根据权利要求1所述的承载基座，其特征在于，所述第一凹部、所述第二凹部与所述承载基座同心设置。The carrier base according to claim 1, wherein the first recess and the second recess are concentrically disposed with the carrier base.
  3. 根据权利要求1所述的承载基座，其特征在于，所述第一凹部开设于所述承载基座的承载面上。The carrier base according to claim 1, wherein the first recess is formed on a bearing surface of the carrier base.
  4. 根据权利要求3所述的承载基座，其特征在于，所述第一凹部的直径大于所述待加工工件的直径，且二者直径的差值范围为1mm至6mm，所述第一凹部的深度的取值范围为0.3mm至1.5mm。The carrier base according to claim 3, wherein the diameter of the first recess is larger than the diameter of the workpiece to be processed, and the difference between the diameters of the two ranges from 1 mm to 6 mm, the first recess The depth range is from 0.3mm to 1.5mm.
  5. 根据权利要求1所述的承载基座，其特征在于，所述第二凹部的开口的面积为所述待加工工件的表面积的40％至95％，所述第二凹部的深度的取值范围为0.1mm至0.5mm。The carrier base according to claim 1, wherein an area of the opening of the second recess is 40% to 95% of a surface area of the workpiece to be processed, and a range of depths of the second recess It is from 0.1mm to 0.5mm.
  6. 根据权利要求1所述的承载基座，其特征在于，所述承载基座上设有用于给待加工工件的支撑针提供移动通道的通孔，所述通孔与所述待加工工件的边缘的径向距离不小于10mm。The carrying base according to claim 1, wherein the carrying base is provided with a through hole for providing a moving passage for the supporting needle of the workpiece to be processed, and the through hole and the edge of the workpiece to be processed The radial distance is not less than 10 mm.
  7. 根据权利要求1所述的承载基座，其特征在于，所述承载基座上的未设置有所述第一凹部的表面设有陶瓷层。 The carrier base according to claim 1, wherein a surface of the carrier base not provided with the first recess is provided with a ceramic layer.
  8. 根据权利要求1所述的承载基座，其特征在于，所述第一凹部和第二凹部的表面均设有阳极氧化膜。The carrier base according to claim 1, wherein the surfaces of the first recess and the second recess are each provided with an anodized film.
  9. 根据权利要求1所述的承载基座，其特征在于，所述承载基座的边缘区域设有介质环，所述介质环的内周壁形成所述第一凹部的侧壁，所述承载基座的承载面形成所述第一凹部的底壁。The carrier base according to claim 1, wherein an edge region of the carrier base is provided with a medium ring, and an inner peripheral wall of the dielectric ring forms a sidewall of the first recess, the bearing base The bearing surface forms the bottom wall of the first recess.
  10. 根据权利要求9所述的承载基座，其特征在于，所述介质环的内径大于所述待加工工件的直径，且二者直径的差值范围为2mm至4mm，所述介质环的厚度取值范围为3mm至5mm。The bearing base according to claim 9, wherein an inner diameter of the medium ring is larger than a diameter of the workpiece to be processed, and a difference in diameter between the two ranges from 2 mm to 4 mm, and a thickness of the dielectric ring is taken Values range from 3mm to 5mm.
  11. 根据权利要求9所述的承载基座，其特征在于，所述承载基座还包括定位件，所述定位件与所述承载基座的径向配合，用于使所述介质环定位在所述承载基座上。The carrier base according to claim 9, wherein the carrier base further comprises a positioning member, the positioning member is radially engaged with the carrier base for positioning the medium ring in the On the carrier base.
  12. 根据权利要求11所述的承载基座，其特征在于，所述定位件与所述介质环二者一体成型。The carrier base according to claim 11, wherein the positioning member and the media ring are integrally formed.
  13. 一种预清洗装置，其特征在于，包括腔体和权利要求1至12任一项中所述的承载基座，所述承载基座设置于所述腔体中。 A pre-cleaning device comprising a cavity and a carrier base as claimed in any one of claims 1 to 12, the carrier base being disposed in the cavity.
PCT/CN2017/091631 2017-05-24 2017-07-04 Bearing base and pre-cleaning device WO2018214243A1 (en)

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