WO2018214243A1 - Base de palier et dispositif de pré-nettoyage - Google Patents

Base de palier et dispositif de pré-nettoyage Download PDF

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Publication number
WO2018214243A1
WO2018214243A1 PCT/CN2017/091631 CN2017091631W WO2018214243A1 WO 2018214243 A1 WO2018214243 A1 WO 2018214243A1 CN 2017091631 W CN2017091631 W CN 2017091631W WO 2018214243 A1 WO2018214243 A1 WO 2018214243A1
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WO
WIPO (PCT)
Prior art keywords
recess
workpiece
carrier base
processed
base according
Prior art date
Application number
PCT/CN2017/091631
Other languages
English (en)
Chinese (zh)
Inventor
常大磊
陈鹏
赵梦欣
李冬冬
李萌
刘菲菲
刘建生
Original Assignee
北京北方华创微电子装备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Publication of WO2018214243A1 publication Critical patent/WO2018214243A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to the field of plasma equipment, and more particularly to a carrier base and a pre-cleaning device.
  • Plasma equipment is widely used in manufacturing fields such as semiconductors, solar cells, and flat panel displays.
  • Common plasma devices include capacitively coupled plasma (CCP), Inductively Coupled Plasma (ICP), and Electron Cyclotron Resonance (ECR) types of plasma processing equipment.
  • CCP capacitively coupled plasma
  • ICP Inductively Coupled Plasma
  • ECR Electron Cyclotron Resonance
  • These plasma devices are generally available in plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), and plasma enhanced chemical vapor deposition (PECVD) processes. Used in.
  • the physical vapor deposition process is one of the most widely used thin film preparation techniques in the semiconductor industry. Before physical vapor deposition, degas and preclean processes are generally required.
  • the degassing process is to remove the substrate from the degassing chamber to a certain temperature to remove water vapor and other volatile impurities adsorbed on the substrate.
  • the pre-cleaning process is to excite a low-pressure reaction gas (a common gas such as argon) into a plasma by the action of radio frequency power, and the plasma contains a large number of active groups such as electrons, ions and excited atoms.
  • the ions acquire sufficient energy in the RF electric field to bombard the surface of the substrate to remove residues and metal oxides from the surface and at the bottom of the trench.
  • the substrate stage which usually carries the substrate is a simple planar disk structure
  • the base is made The edge etch rate of the sheet is faster; on the other hand, the distribution of plasma density tends to be radial
  • the unevenness, and generally the plasma density in the central region of the substrate stage, is higher, resulting in a faster etch rate for the central region of the substrate.
  • the reason for the two aspects is that the etching uniformity of the whole substrate is poor, which in turn affects the process effect.
  • the invention aims to at least solve one of the technical problems existing in the prior art, and proposes a bearing base and a pre-cleaning device, which can not only weaken the fringe electric field of the workpiece to be processed, thereby reducing the treatment
  • the etching rate of the edge of the workpiece is processed, and the voltage of the central region is weakened, thereby effectively reducing the ion energy of the central region attacking the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece to be processed, thereby effectively improving the etching uniformity of the workpiece to be processed. Sex, get better process results.
  • a carrier base for carrying a workpiece to be processed, and a first recess is formed on the carrier base, and the workpiece to be processed can be accommodated in the first recess;
  • a second recess is formed in the bottom wall of the first recess, and the second recess is used to reduce the etching rate of the central region of the workpiece to be processed.
  • the first recess and the second recess are concentrically arranged with the carrier base.
  • the first recess is formed on a bearing surface of the carrier base.
  • the diameter of the first recess is larger than the diameter of the workpiece to be processed, and the difference between the diameters of the two recesses ranges from 1 mm to 6 mm, and the depth of the first recess ranges from 0.3 mm to 1.5 mm.
  • the area of the opening of the second recess is 40% to 95% of the surface area of the workpiece to be processed, and the depth of the second recess ranges from 0.1 mm to 0.5 mm.
  • the bearing base is provided with a through hole for providing a moving passage for the supporting needle of the workpiece to be processed, and the radial distance between the through hole and the edge of the workpiece to be processed is not less than 10 mm.
  • a surface of the carrier base not provided with the first recess is provided with a ceramic layer.
  • the surfaces of the first concave portion and the second concave portion are each provided with an anodized film.
  • the edge region of the carrier base is provided with a medium ring, and an inner peripheral wall of the medium ring forms a sidewall of the first recess, and a bearing surface of the carrier base forms a bottom wall of the first recess.
  • the inner diameter of the medium ring is larger than the diameter of the workpiece to be processed, and the difference between the diameters of the two is in the range of 2 mm to 4 mm, and the thickness of the dielectric ring ranges from 3 mm to 5 mm.
  • the carrier base further includes a positioning member, and the positioning member cooperates with the bearing base in a radial direction for positioning the medium ring on the carrier base.
  • the positioning member and the medium ring are integrally formed.
  • the present invention also provides a pre-cleaning device comprising a cavity and a carrier base provided by any of the foregoing aspects of the present invention, the carrier base being disposed in the cavity.
  • the carrier base of the present invention is provided with a first recess and a second recess disposed on the bottom wall of the first recess, the first recess can weaken the electric field of the edge of the workpiece to be processed, and reduce the etching rate of the edge of the workpiece to be processed;
  • the setting of the concave portion can weaken the voltage in the central region where the second concave portion is located, effectively reduce the ion energy of attacking the central region of the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece to be processed, and the effect of the two can effectively improve
  • the etch uniformity of the workpiece to be processed gives better process results.
  • the pre-cleaning device of the present invention can not only weaken the fringe electric field of the workpiece to be processed, but also reduce the etching rate of the edge of the workpiece to be processed, and can reduce the voltage in the central region of the second concave portion by using the above-mentioned bearing base.
  • the ion energy of the central region of the workpiece to be processed is effectively reduced, thereby reducing the etching rate of the central region of the workpiece to be processed, thereby effectively improving the etching uniformity of the workpiece to be processed, and obtaining better process results.
  • FIG. 1 is a top plan view of a carrier base in accordance with an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the carrier base of FIG. 1 taken along the line A-A.
  • FIG 3 is a cross-sectional view of a carrier base in accordance with another embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing the principle of realizing the technical effect of the bearing base of the present invention.
  • the present invention provides a carrier base.
  • the carrier base is used to carry a workpiece to be processed.
  • the workpiece to be processed is usually a substrate.
  • a first recess is formed on the carrier base for receiving the workpiece to be processed.
  • the workpiece to be processed can be confined in the first recess, thereby avoiding a large displacement of the workpiece to be processed on the carrier base and affecting the transmission of the workpiece to be processed.
  • the first recess can weaken the fringe electric field of the workpiece to be processed to avoid the edge of the workpiece to be processed The etch rate is too fast.
  • a second recess is provided on the bottom wall of the first recess.
  • the second recess serves to reduce the etch rate of the central region of the workpiece to be processed.
  • the density of the plasma 3 in the central region is high, resulting in a faster etching rate of the central region of the workpiece 2 to be processed corresponding thereto.
  • the plasma 3 can be bombarded with the ion energy of the central region of the workpiece 2 to be processed, thereby reducing the etching rate of the central region of the workpiece 2 to be processed, as shown in FIG.
  • the specific principle is as follows: There is a DC bias voltage V DC between the plasma 3 and the carrier base 1. Due to the presence of the second recess 12, there is a capacitance C1 between the workpiece 2 to be processed and the carrier base 1, the thickness of the capacitor C1 is d; there is a sheath capacitance C2 between the plasma 3 and the workpiece 2 to be processed, the sheath The thickness of the capacitor C2 is S m , and the capacitor C1 is connected in series with the sheath capacitor C2.
  • first recess 11 and the second recess 12 are concentrically arranged with the carrier base 1 .
  • the first recess 11 , the second recess 12 and the carrier base 1 are arranged concentrically, which is advantageous for further improving the etching uniformity of the workpiece 2 to be processed.
  • the diameter of the bearing surface of the bearing base 1 is larger than the diameter of the first recess 11 , and the diameter difference between the two ranges from 10 mm to 30 mm. In this way, it is possible to ensure that the first recess 11 is conveniently and firmly formed on the bearing surface of the carrier base 1 without the area of the carrier base 1 Too large, which can save the cost of manufacturing, use and storage.
  • the first recess 11 can be formed directly on the bearing surface of the carrier base 1 , for example, the first recess 11 is opened on the bearing surface of the carrier base 1 .
  • the bearing surface of the carrier base 1 here refers to the surface of the carrier base 1 for carrying the workpiece 2 to be processed.
  • the diameter of the first recess 11 is larger than the diameter of the workpiece 2 to be processed, and the difference between the diameters of the two ranges from 1 mm to 6 mm.
  • the depth of the first recess 11 ranges from 0.3 mm to 1.5 mm.
  • the size of the first recess 11 is limited to facilitate the pick-and-place of the workpiece 2 to be processed, and to better limit the workpiece 2 to be processed in the first recess 11 and to further improve the workpiece 2 to be processed. Etching uniformity.
  • the first recess 11 may have a diameter of 204 mm, and the first recess 11 may have a depth of 0.5 mm.
  • the area of the opening of the second recess 12 is 40% to 95% of the surface area of the workpiece 2 to be processed. Further, the area of the opening of the second recess 12 is 75% to 95% of the surface area of the workpiece 2 to be processed, so that the etching rate of the central portion of the workpiece 2 to be processed can be more effectively reduced.
  • the depth of the second recess 12 ranges from 0.1 mm to 0.5 mm. The limitation of the size of the second recess 12 described above is advantageous for more effectively reducing the etching rate of the central region of the workpiece 2 to be processed, and is advantageous for further improving the etching uniformity of the workpiece 2 to be processed.
  • the second recess 12 may have a diameter of 180 mm, and the second recess 12 may have a depth of 0.2 mm.
  • the bearing base 1 is provided with a through hole 13 for providing a moving passage for the supporting needle of the workpiece 2 to be processed, and the supporting needle can move up and down in the through hole 13 to drive the workpiece to be processed. 2 rises or falls.
  • the radial distance between the through hole 13 and the edge of the workpiece 2 to be processed is not less than 10 mm, so that plasma can be prevented from entering the through hole 13 and causing an abnormal etching rate; and the process of raising and lowering the needle can be ensured.
  • the workpiece 2 is machined for stable support.
  • a surface of the carrier base 1 on which the first recess 11 is not disposed is provided with a ceramic layer.
  • the ceramic layer serves to protect the carrier base 1 and to avoid contamination of the workpiece 2 to be processed. Thickness of ceramic layer It can be set according to actual needs, for example, a ceramic layer of 0.2 mm is sprayed on the bearing surface of the carrier base 1.
  • an anodized film is disposed on the surfaces of the first recess 11 and the second recess 12. That is, an anodized film is provided at least on the side walls of the first recess 11 and the side walls and the bottom wall of the second recess 12.
  • the anodized film can be formed by anodizing the first recess 11 and the second recess 12.
  • the anodized film is dense and non-conductive, has good wear resistance, can effectively protect the first recess 11 and the second recess 12, and avoids contamination of the workpiece 2 to be processed due to wear of the first recess 11 and the second recess 12.
  • the first recess 11 may be formed by a construction member such as a media ring and a bearing surface of the carrier base.
  • the edge region of the carrier base 1 is provided with a dielectric ring 14.
  • the inner peripheral wall of the medium ring 14 and the bearing surface of the carrier base 1 form a first recess 11 , that is, the inner peripheral wall of the medium ring 14 forms a side wall of the first recess 11 , and the bearing surface of the carrier base 1 forms the first recess 11 .
  • a second recess 12 is provided on the bearing surface of the carrier base 1, that is, on the bottom wall of the first recess 11.
  • the dielectric ring 14 can optionally be a quartz ring.
  • the inner diameter of the medium ring 14 is larger than the diameter of the workpiece 2 to be processed, and the difference between the diameters of the two ranges from 2 mm to 4 mm.
  • the thickness H of the dielectric ring 14 ranges from 3 mm to 5 mm.
  • the thickness of the dielectric ring 14 is higher than the thickness of the workpiece to be processed, which is advantageous for improving the fringe electric field of the first recess 11 and thereby improving the etching uniformity of the workpiece 2 to be processed.
  • the carrier base 1 further includes a positioning member 15 .
  • the positioning member 15 is radially engaged with the carrier base 1 for positioning the media ring 14 on the carrier base 1.
  • the positioning member 15 may be, for example, a pin or a bolt, and the medium ring 14 is positioned on the carrier base 1 by pins or bolts.
  • the positioning member 15 is configured to be engageable with the edge of the carrier base 1, and the media ring 14 is positioned on the carrier base 1 by the engagement of the positioning member 15 with the edge of the carrier base 1.
  • the positioning member 15 may be a protrusion on the surface of the dielectric ring 14, and the carrier base 1 is provided with a groove matching the protrusion, and the medium ring 14 is positioned on the bearing by the cooperation of the protrusion and the groove. On the base 1.
  • positioning member 15 and the medium ring 14 are integrally formed. Positioning member 15 and media ring The integral molding of 14 facilitates the strength of the media ring 14 and the positioning member 15, as well as the assembly and maintenance of the carrier base 1.
  • the invention further provides a pre-cleaning device.
  • the pre-cleaning device comprises a cavity and a carrier base 1 provided by the aforementioned embodiment of the invention, and the carrier base 1 is disposed in the cavity. This pre-cleaning device can be used for pre-cleaning of the workpiece 2 to be processed.
  • the pre-cleaning device provided by the present invention adopts the carrier base 1 provided by the foregoing embodiment of the present invention.
  • the edge electric field of the workpiece 2 to be processed can be weakened, and the edge of the workpiece 1 to be processed can be reduced.
  • the etching rate is such that the etching uniformity of the workpiece 2 to be processed can be effectively improved.
  • the voltage in the region where the second recess 12 is located can be weakened, thereby effectively reducing the ion energy of the central region of the workpiece to be processed, thereby reducing the etching rate of the central region of the workpiece 2 to be processed, thereby The etching uniformity of the workpiece 2 to be processed can be effectively improved.

Abstract

L'invention concerne une base de palier (1) et un dispositif de pré-nettoyage. La base de palier (1) est utilisée pour supporter une pièce à usiner à traiter (2); une première partie évidée (11) est formée sur la base de palier (1); la pièce à usiner à traiter (2) peut être reçue dans la première partie évidée (11); la paroi inférieure de la première partie évidée (11) comprend une seconde partie évidée (12); la seconde partie évidée (12) est utilisée pour réduire une vitesse de gravure d'une zone centrale de la pièce à usiner à traiter. La base de palier (1) et le dispositif de pré-nettoyage peuvent non seulement affaiblir un champ électrique de bord de la pièce à usiner à traiter (2), mais peut également affaiblir les tensions au niveau de la zone centrale, de telle sorte que l'uniformité de gravure de la pièce à usiner à traiter (2) peut être efficacement améliorée, et un meilleur résultat de traitement peut être obtenu.
PCT/CN2017/091631 2017-05-24 2017-07-04 Base de palier et dispositif de pré-nettoyage WO2018214243A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710373464.0 2017-05-24
CN201710373464.0A CN108962810A (zh) 2017-05-24 2017-05-24 一种承载基座及预清洗装置

Publications (1)

Publication Number Publication Date
WO2018214243A1 true WO2018214243A1 (fr) 2018-11-29

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Application Number Title Priority Date Filing Date
PCT/CN2017/091631 WO2018214243A1 (fr) 2017-05-24 2017-07-04 Base de palier et dispositif de pré-nettoyage

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CN (1) CN108962810A (fr)
TW (1) TWI660391B (fr)
WO (1) WO2018214243A1 (fr)

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* Cited by examiner, † Cited by third party
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CN111463108A (zh) * 2020-04-09 2020-07-28 北京烁科精微电子装备有限公司 晶圆清洗装置

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CN106024688A (zh) * 2015-03-27 2016-10-12 株式会社思可林集团 基板保持方法及基板处理装置
CN206907751U (zh) * 2017-05-24 2018-01-19 北京北方华创微电子装备有限公司 一种承载基座及预清洗装置

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TWI665753B (zh) * 2014-06-05 2019-07-11 美商應用材料股份有限公司 多晶圓旋轉料架ald中的集成兩軸升降旋轉電動機的中央基座
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Publication number Priority date Publication date Assignee Title
JP2006237456A (ja) * 2005-02-28 2006-09-07 Dainippon Screen Mfg Co Ltd 基板処理装置および基板飛散防止方法
CN101772836A (zh) * 2007-06-19 2010-07-07 Memc电子材料有限公司 用于提高产量和减少晶片损坏的基座
CN101814449A (zh) * 2009-02-25 2010-08-25 硅电子股份公司 用于鉴别半导体晶片在热处理期间的错误位置的方法
CN105390368A (zh) * 2014-09-09 2016-03-09 北京北方微电子基地设备工艺研究中心有限责任公司 晶片预清洗腔室及半导体加工设备
CN105789107A (zh) * 2014-12-26 2016-07-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种基座及等离子体加工设备
CN106024688A (zh) * 2015-03-27 2016-10-12 株式会社思可林集团 基板保持方法及基板处理装置
CN206907751U (zh) * 2017-05-24 2018-01-19 北京北方华创微电子装备有限公司 一种承载基座及预清洗装置

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TW201901731A (zh) 2019-01-01
TWI660391B (zh) 2019-05-21
CN108962810A (zh) 2018-12-07

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