JP5581366B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP5581366B2 JP5581366B2 JP2012249865A JP2012249865A JP5581366B2 JP 5581366 B2 JP5581366 B2 JP 5581366B2 JP 2012249865 A JP2012249865 A JP 2012249865A JP 2012249865 A JP2012249865 A JP 2012249865A JP 5581366 B2 JP5581366 B2 JP 5581366B2
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- plasma
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- sputtering
- vacuum chamber
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- 238000005530 etching Methods 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 80
- 238000004544 sputter deposition Methods 0.000 claims description 62
- 230000007935 neutral effect Effects 0.000 claims description 33
- 239000013077 target material Substances 0.000 claims description 28
- 230000005684 electric field Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 description 68
- 239000010408 film Substances 0.000 description 66
- 230000008569 process Effects 0.000 description 61
- 239000007789 gas Substances 0.000 description 56
- 238000009616 inductively coupled plasma Methods 0.000 description 34
- 230000001681 protective effect Effects 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000009826 distribution Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000003672 processing method Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Description
前記ステージは、基板を支持するためのもので、前記真空チャンバの内部に設置される。前記ターゲット材は、前記ステージと対向して設置される。前記プラズマ源は、前記真空チャンバ内に高周波電場を形成する電場形成手段と、前記真空チャンバ内に磁気中性線を形成する磁場形成手段とを含む。前記プラズマ源は、前記電場形成手段および前記磁場形成手段によって前記ステージと前記ターゲット材との間に発生させたプラズマで、前記基板をエッチングする、または、前記ターゲット材をスパッタし、そのスパッタ物を当該プラズマで分解して前記基板へ堆積させる。
前記保護膜の形成工程は、前記基板と前記基板に対向して配置されたターゲット材との間に高周波電場と磁気中性線を形成してプラズマを発生させることを含む。前記ターゲット材はスパッタされ、そのスパッタ物は前記プラズマで分解して前記基板へ堆積させられる。
前記ステージは、基板を支持するためのもので、前記真空チャンバの内部に設置される。前記ターゲット材は、前記ステージと対向して設置される。前記プラズマ源は、前記真空チャンバ内に高周波電場を形成する電場形成手段と、前記真空チャンバ内に磁気中性線を形成する磁場形成手段とを含む。前記プラズマ源は、前記電場形成手段および前記磁場形成手段によって前記ステージと前記ターゲット材との間に発生させたプラズマで、前記基板をエッチングする、または、前記ターゲット材をスパッタし、そのスパッタ物を当該プラズマで分解して前記基板へ堆積させる。
図1は、本発明の第1の実施形態によるプラズマ処理方法を実施するためのプラズマ処理装置11の概略構成図である。図示するプラズマ処理装置11は、NLD(磁気中性線放電:magnetic Neutral Loop Discharge)型のプラズマエッチング装置としての機能と、NLDを利用したスパッタ装置としての機能を有している。
・プロセスガス:Ar 30[sccm]
・高周波電力 RF1:3000[W] 13.56[MHz]
RF2: 0[W]
RF3: 500[W] 12.50[MHz]
・処理時間:4[sec]
・処理圧力:2.6[Pa]
・磁気コイル電流 磁気コイル24A:30.6[A]
磁気コイル24B:49.3[A]
磁気コイル24C:30.6[A]
環状磁気中性線の半径:146[mm]
(ICPスパッタ条件)
・プロセスガス:Ar 30[sccm]
・高周波電力 RF1:3000[W] 13.56[MHz]
RF2: 0[W]
RF3: 500[W] 12.50[MHz]
・処理時間:4[sec]
・処理圧力:2.6[Pa]
(ICPエッチング条件)
・プロセスガス:Ar 30[sccm]
SF6 300[sccm]
・高周波電力 RF1:1500[W] 13.56MHz
RF2: 60[W] 12.50MHz
RF3: 0[W]
・処理時間:7[sec]
・処理圧力:10[Pa]
(ICPスパッタ条件)
・プロセスガス:Ar 30[sccm]
・高周波電力 RF1:3000[W] 13.56MHz
RF2: 0[W]
RF3: 500[W] 12.50MHz
・処理時間:4[sec]
・処理圧力:2.6[Pa]
(NLDエッチング条件)
・プロセスガス:Ar 30[sccm]
SF6 300[sccm]
・高周波電力 RF1:1500[W] 13.56[MHz]
RF2: 60[W] 12.50[MHz]
RF3: 0[W]
・処理時間:7[sec]
・処理圧力:10[Pa]
・磁気コイル電流 磁気コイル24A:30.6[A]
磁気コイル24B:54.0[A]
磁気コイル24C:30.6[A]
(NLDスパッタ条件)
・プロセスガス:アルゴン(Ar) 30[sccm]
・高周波電力 RF1:3000[W] 13.56[MHz]
RF2: 0[W]
RF3: 500[W] 12.50[MHz]
・処理時間:4[sec]
・処理圧力:2.6[Pa]
・磁気コイル電流 磁気コイル24A:30.6[A]
磁気コイル24B:49.3[A]
磁気コイル24C:30.6[A]
環状磁気中性線の半径:146[mm]
図10は、本発明の第2の実施形態によるプラズマ処理装置としてのスパッタ装置12の概略構成図である。なお、図において上述の第1の実施形態と対応する部分については同一の符号を付し、その詳細な説明は省略するものとする。
図11は、本発明の第3の実施形態によるプラズマ処理装置としてのスパッタ装置13の概略構成図である。なお、図において上述の第1の実施形態と対応する部分については同一の符号を付し、その詳細な説明は省略するものとする。
図12は、本発明の第4の実施形態によるプラズマ処理装置としてのスパッタ装置14の概略構成図である。なお、図において上述の第1の実施形態と対応する部分については同一の符号を付し、その詳細な説明は省略するものとする。
21 真空槽
21a プラズマ形成空間(真空チャンバ)
23 高周波コイル(電場形成手段)
24 磁気コイル(磁場形成手段)
25 磁気中性線
26 ステージ
28 天板(対向電極)
30 ガス導入部
31 ターゲット材
33 電極部材(電場形成手段)
35 窓部材
36 アンテナコイル(電場形成手段)
Claims (4)
- 真空チャンバと、
前記真空チャンバの内部に設置された、表面に凹部の幅が100μm以下である凹凸パターンを有するレジストマスクが形成された基板を支持するためのステージと、
前記ステージと対向して設置され、中央部に開口を有する環状に形成されたターゲット材と、
前記真空チャンバ内に高周波電場を形成する前記開口に設置された電場形成手段と、前記真空チャンバ内に磁気中性線を形成する磁場形成手段とを含み、前記電場形成手段および前記磁場形成手段によって前記ステージと前記ターゲット材との間に発生させたプラズマで、前記基板をエッチングする、または、前記ターゲット材をスパッタし、そのスパッタ物を当該プラズマで分解して前記基板へ堆積させるプラズマ源と
を具備する
プラズマ処理装置。 - 請求項1に記載のプラズマ処理装置であって、
前記磁場形成手段は、前記ターゲット材に関して前記ステージ側とは反対側の前記真空チャンバの外部に配置された複数の磁気コイルを含む
プラズマ処理装置。 - 請求項1又は2に記載のプラズマ処理装置であって、
前記電場形成手段は、前記真空チャンバの外部に配置された高周波コイルを含む
プラズマ処理装置。 - 請求項1又は2に記載のプラズマ処理装置であって、
前記電場形成手段は、
前記ステージに対向する対向電極と、
前記対向電極に接続された高周波電源とを含む
プラズマ処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012249865A JP5581366B2 (ja) | 2007-08-08 | 2012-11-14 | プラズマ処理装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007206021 | 2007-08-08 | ||
JP2007206021 | 2007-08-08 | ||
JP2012249865A JP5581366B2 (ja) | 2007-08-08 | 2012-11-14 | プラズマ処理装置 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009526463A Division JP5207406B2 (ja) | 2007-08-08 | 2008-08-05 | プラズマ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013070073A JP2013070073A (ja) | 2013-04-18 |
JP5581366B2 true JP5581366B2 (ja) | 2014-08-27 |
Family
ID=40341361
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009526463A Active JP5207406B2 (ja) | 2007-08-08 | 2008-08-05 | プラズマ処理方法 |
JP2012249865A Active JP5581366B2 (ja) | 2007-08-08 | 2012-11-14 | プラズマ処理装置 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009526463A Active JP5207406B2 (ja) | 2007-08-08 | 2008-08-05 | プラズマ処理方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110180388A1 (ja) |
EP (1) | EP2178109A4 (ja) |
JP (2) | JP5207406B2 (ja) |
KR (1) | KR101117929B1 (ja) |
CN (1) | CN101785088B (ja) |
TW (1) | TWI487804B (ja) |
WO (1) | WO2009020129A1 (ja) |
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CN108172396B (zh) * | 2016-12-07 | 2021-11-16 | 北京北方华创微电子装备有限公司 | 磁性薄膜沉积腔室及薄膜沉积设备 |
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CN101785088A (zh) | 2010-07-21 |
CN101785088B (zh) | 2013-06-05 |
EP2178109A4 (en) | 2012-12-19 |
KR101117929B1 (ko) | 2012-02-29 |
TWI487804B (zh) | 2015-06-11 |
JP5207406B2 (ja) | 2013-06-12 |
JPWO2009020129A1 (ja) | 2010-11-04 |
US20110180388A1 (en) | 2011-07-28 |
EP2178109A1 (en) | 2010-04-21 |
WO2009020129A1 (ja) | 2009-02-12 |
KR20100046041A (ko) | 2010-05-04 |
TW200925304A (en) | 2009-06-16 |
JP2013070073A (ja) | 2013-04-18 |
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