TWM620754U - Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device - Google Patents
Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device Download PDFInfo
- Publication number
- TWM620754U TWM620754U TW110210293U TW110210293U TWM620754U TW M620754 U TWM620754 U TW M620754U TW 110210293 U TW110210293 U TW 110210293U TW 110210293 U TW110210293 U TW 110210293U TW M620754 U TWM620754 U TW M620754U
- Authority
- TW
- Taiwan
- Prior art keywords
- cover ring
- wafer
- stopper
- carrier plate
- main body
- Prior art date
Links
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本新型為一種晶圓承載固定裝置,主要包括一擋件、一蓋環及一承載盤,其中擋件用以承載蓋環。擋件的環形底部連接側壁及環形凸部,並於環形凸部的徑向內側形成一開口。承載盤用以承載一晶圓,其中承載盤位於蓋環的下方,並可進入擋件的開口內。蓋環包括一主體部及一遮擋部,其中主體部為環狀體,並有部分的主體部覆蓋擋件的開口。遮擋部連接主體部的徑向外側,並朝擋件的環形底部的方向凸起,其中蓋環的遮擋部與擋件的側壁之間的間距介於3至10毫米之間,可避免製程氣體或靶材原子經由蓋環及擋件之間的間隙傳遞到擋件的外部。The present invention is a wafer carrying and fixing device, which mainly includes a stopper, a cover ring and a carrying plate, wherein the stopper is used for carrying the cover ring. The annular bottom of the stop is connected with the side wall and the annular convex part, and an opening is formed on the radial inner side of the annular convex part. The carrier plate is used to carry a wafer, wherein the carrier plate is located under the cover ring and can enter the opening of the stopper. The cover ring includes a main body part and a shielding part, wherein the main body part is an annular body, and a part of the main body part covers the opening of the blocking member. The shielding portion is connected to the radially outer side of the main body and protrudes toward the annular bottom of the stopper. The distance between the shielding portion of the cover ring and the side wall of the stopper is between 3 to 10 mm, which can avoid process gas Or the target atoms are transferred to the outside of the stopper through the gap between the cover ring and the stopper.
Description
本新型有關於一種晶圓承載固定裝置,用以將晶圓固定在承載盤上,並可減少製程氣體或靶材原子污染腔體。The present invention relates to a wafer carrying and fixing device, which is used for fixing the wafer on the carrying plate, and can reduce the contamination of the cavity by the process gas or target atoms.
化學氣相沉積(CVD)、物理氣相沉積(PVD)及原子層沉積(ALD)皆是常用的薄膜沉積設備,並普遍被使用在積體電路、發光二極體及顯示器等製程中。Chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) are all commonly used thin film deposition equipment, and are commonly used in integrated circuits, light-emitting diodes, and display manufacturing processes.
沉積的設備主要包括一腔體及一承載盤,其中承載盤位於腔體內,並用以承載至少一晶圓。以物理氣相沉積為例,腔體內需要設置一靶材,其中靶材面對承載盤上的晶圓。在進行物理氣相沉積時,會透過固定裝置將晶圓固定在承載盤上,並將惰性氣體及/或反應氣體輸送至腔體內,分別對靶材及承載盤施加偏壓,其中承載盤還會加熱承載的晶圓。腔體內的惰性氣體會因為高壓電場的作用,形成離子化的惰性氣體。離子化的惰性氣體會受到靶材上的偏壓吸引而轟擊靶材。從靶材濺出的靶材原子或分子會受到承載盤上的偏壓吸引,並沉積在加熱的晶圓的表面,以在晶圓的表面形成薄膜。The deposition equipment mainly includes a cavity and a carrier plate, wherein the carrier plate is located in the cavity and used to carry at least one wafer. Taking physical vapor deposition as an example, a target material needs to be set in the cavity, where the target material faces the wafer on the carrier plate. During physical vapor deposition, the wafer is fixed on the carrier plate through a fixing device, and the inert gas and/or reactive gas are transported into the cavity to apply bias to the target and the carrier plate respectively. The carrier plate also Will heat the loaded wafer. The inert gas in the cavity will form ionized inert gas due to the action of the high-voltage electric field. The ionized inert gas will be attracted by the bias on the target material and bombard the target material. The target atoms or molecules sputtered from the target are attracted by the bias voltage on the carrier plate and deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.
此外在進行物理氣相沉積製程時,承載盤可相對於靶材位移,並改變承載盤承載的晶圓與靶材之間的距離,以調整沉積製程的參數。In addition, during the physical vapor deposition process, the carrier plate can be displaced relative to the target material, and the distance between the wafer carried by the carrier plate and the target material can be changed to adjust the parameters of the deposition process.
如先前技術所述,習用的薄膜沉積設備雖然可以透過調整承載盤與靶材之間的距離,改變沉積製程的參數。然而習用的薄膜沉積設備的承載盤與靶材之間的距離可調整幅度很小,當承載盤朝靶材的方向位移時,可能會造成製程氣體及/或靶材原子及/或靶材分子傳遞至腔體,並在腔體的內表面形成薄膜沉積,進而對腔體造成汙染。為此本新型提出一種新穎的晶圓承載固定裝置及應用該晶圓承載固定裝置的薄膜沉積設備,可增加承載盤與靶材之間距離的可調整幅度,並可減少製程氣體及/或靶材原子及/或靶材分子進入腔體。As mentioned in the prior art, the conventional thin film deposition equipment can change the parameters of the deposition process by adjusting the distance between the carrier plate and the target. However, the distance between the carrier plate and the target of the conventional thin film deposition equipment can be adjusted to a small extent. When the carrier plate is displaced in the direction of the target, it may cause process gas and/or target atoms and/or target molecules. It is transferred to the cavity and forms a thin film deposit on the inner surface of the cavity, thereby causing pollution to the cavity. For this reason, the present invention proposes a novel wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device, which can increase the adjustable range of the distance between the carrying plate and the target, and reduce the process gas and/or target. The material atoms and/or target molecules enter the cavity.
本新型的一目的,在於提出一種晶圓承載固定裝置及薄膜沉積設備,主要包括一承載盤、一蓋環及一擋件,其中承載盤用以承載至少一晶圓。擋件用以承載蓋環,當承載盤帶動承載的晶圓朝蓋環的方向靠近時蓋環會接觸晶圓,以將晶圓固定在承載盤上,並於擋件、蓋環、承載盤及/或腔體之間形成一反應空間。An object of the present invention is to provide a wafer carrying and fixing device and a thin film deposition equipment, which mainly include a carrying tray, a cover ring and a stopper, wherein the carrying tray is used to carry at least one wafer. The stopper is used to carry the cover ring. When the carrier plate drives the wafer to be carried close to the cover ring, the cover ring will contact the wafer to fix the wafer on the carrier plate. And/or a reaction space is formed between the cavities.
本新型的蓋環的側邊與擋件之間的間距小於10毫米,以提高蓋環及擋件對腔體的遮擋效果,可避免反應空間內的反應氣體、靶材原子及/或靶材分子接觸蓋環及/或擋件外部的腔體,以減少腔體內表面上的薄膜沉積。The distance between the side edge of the cover ring and the stopper of the present invention is less than 10 mm, so as to improve the shielding effect of the cover ring and the stopper on the cavity, and can avoid the reaction gas, the target atom and/or the target material in the reaction space The molecules contact the cavity outside the cover ring and/or the stopper to reduce film deposition on the inner surface of the cavity.
此外承載盤可帶動承載的晶圓及蓋環繼續往靶材的方向靠近,使得蓋環離開擋件,以進一步縮短晶圓與靶材之間的距離。由於本新型的蓋環與擋件之間的間距較小,即便蓋環離開擋件,蓋環及擋件仍可提供良好的遮擋效果,可避免反應空間內的反應氣體、靶材原子及/或靶材分子傳遞至蓋環及/或擋件外側的腔體。In addition, the carrier tray can drive the loaded wafer and the cover ring to continue to approach the target, so that the cover ring leaves the stopper, so as to further shorten the distance between the wafer and the target. Due to the small distance between the cover ring and the stopper of the present invention, even if the cover ring leaves the stopper, the cover ring and the stopper can still provide a good shielding effect, and can avoid the reaction gas, target atoms and/or in the reaction space. Or the target molecules are delivered to the cavity outside the cover ring and/or the stopper.
本新型的一目的,在於提出一種晶圓承載固定裝置及薄膜沉積設備,其中蓋環包括一第一蓋環及一第二蓋環,且第一蓋環的半徑大於第二蓋環,並用以承載第二蓋環。當承載盤與蓋環接觸時,只有第二蓋環會接觸承載盤上的晶圓,而承載盤則用以承載第一蓋環。透過第一蓋環及第二蓋環的設計可減少蓋環施加在晶圓上的壓力,並降低晶圓被蓋環壓碎的機率。An object of the present invention is to provide a wafer carrying and fixing device and a thin film deposition equipment, wherein the cover ring includes a first cover ring and a second cover ring, and the radius of the first cover ring is larger than that of the second cover ring, and is used for Carry the second cover ring. When the carrier plate is in contact with the cover ring, only the second cover ring will contact the wafer on the carrier plate, and the carrier plate is used to carry the first cover ring. Through the design of the first cover ring and the second cover ring, the pressure exerted by the cover ring on the wafer can be reduced, and the probability of the wafer being crushed by the cover ring can be reduced.
為了達到上述的目的,本新型提出一種晶圓承載固定裝置,包括:一擋件,包括一側壁、一環形底部及一環形凸部,其中環形底部連接側壁及環形凸部,並於環形凸部的一徑向內側形成一開口;一蓋環,用以放置在擋件上,並包括:一主體部,主體部為一環狀體,其中部分主體部位於擋件的開口的延伸位置;一遮擋部,連接主體部的一徑向外側,並包括一第一凸起部朝擋件的環形底部的方向凸起,或朝遠離擋件的環形底部的方向凸起,其中遮擋部與擋件的側壁之間的間距介於3至10毫米之間;及一承載盤,包括一承載面用以承載一晶圓,其中承載盤位於蓋環的下方,當承載盤帶動晶圓朝蓋環位移時,蓋環的主體部會接觸晶圓。In order to achieve the above objective, the present invention proposes a wafer carrying and fixing device, which includes: a stopper, including a side wall, an annular bottom and an annular convex portion, wherein the annular bottom is connected to the side wall and the annular convex portion, and is connected to the annular convex portion An opening is formed on the inner side of the radial direction; a cover ring is used to be placed on the stopper, and includes: a main body part, the main body part is an annular body, part of the main body part is located at the extension position of the opening of the stopper; The shielding part is connected to a radially outer side of the main body part, and includes a first protrusion that protrudes toward the annular bottom of the stopper, or protrudes away from the annular bottom of the stopper, wherein the shielding part and the stopper The distance between the sidewalls of the carrier plate is between 3 and 10 mm; and a carrier plate, including a carrier surface for carrying a wafer, wherein the carrier plate is located below the cover ring, when the carrier plate drives the wafer to move toward the cover ring At this time, the main body of the cover ring contacts the wafer.
本新型提供一種薄膜沉積設備,包括:一腔體,包括一容置空間;一晶圓承載固定裝置,位於容置空間內,包括:一擋件,包括一側壁、一環形底部及一環形凸部,其中側壁連接腔體,而環形底部連接側壁及環形凸部,並於環形凸部的一徑向內側形成一開口;一蓋環,用以放置在擋件上,並包括:一主體部,主體部為一環狀體,其中部分主體部位於擋件的開口的延伸位置;一遮擋部,連接主體部的一徑向外側,並包括一第一凸起部朝擋件的環形底部的方向凸起,其中遮擋部與擋件的側壁之間的間距介於3至10毫米之間;及一承載盤,包括一承載面用以承載一晶圓,其中承載盤位於蓋環的下方,當承載盤帶動晶圓朝蓋環位移時,蓋環的主體部會接觸晶圓。The present model provides a thin film deposition equipment, including: a cavity, including an accommodating space; a wafer carrying and fixing device, located in the accommodating space, including: a stopper, including a side wall, an annular bottom and an annular convex Part, wherein the side wall is connected to the cavity, and the annular bottom part is connected to the side wall and the annular convex part, and an opening is formed on a radial inner side of the annular convex part; a cover ring is used to be placed on the stopper and includes: a main body part , The main body is a ring-shaped body, part of the main body is located at the extension position of the opening of the stop; A directional protrusion, wherein the distance between the shielding portion and the side wall of the blocking member is between 3 to 10 mm; and a carrier plate including a carrier surface for carrying a wafer, wherein the carrier plate is located under the cover ring, When the carrier plate drives the wafer to move toward the cover ring, the main body of the cover ring contacts the wafer.
所述的晶圓承載固定裝置及薄膜沉積設備,其中遮擋部包括一第二凸起部,朝遠離擋件的環形底部的方向凸起。In the wafer supporting and fixing device and the thin film deposition equipment, the shielding portion includes a second protrusion that protrudes in a direction away from the annular bottom of the stopper.
所述的晶圓承載固定裝置及薄膜沉積設備,其中蓋環及承載盤分別設置一對應的對位單元,並透過對位單元對位蓋環及承載盤。In the wafer carrying and fixing device and the thin film deposition equipment, the cover ring and the carrying plate are respectively provided with a corresponding alignment unit, and the cover ring and the carrying plate are aligned through the alignment unit.
所述的晶圓承載固定裝置及薄膜沉積設備,其中蓋環包括一第一蓋環及一第二蓋環,第一蓋環的周長大於第二蓋環,並用以承載第二蓋環,當承載盤朝蓋環位移時,承載盤用以承載第一蓋環,而第二蓋環會接觸晶圓,第一蓋環及第二蓋環分別設置一對應的對位單元,並透過對位單元對位第二蓋環及第一蓋環。In the wafer carrying and fixing device and the thin film deposition equipment, the cover ring includes a first cover ring and a second cover ring, the first cover ring has a larger circumference than the second cover ring and is used to carry the second cover ring, When the carrier plate moves toward the cover ring, the carrier plate is used to carry the first cover ring, and the second cover ring will contact the wafer. The first cover ring and the second cover ring are respectively provided with a corresponding alignment unit, and through the alignment The positioning unit aligns the second cover ring and the first cover ring.
所述的晶圓承載固定裝置及薄膜沉積設備,包括一環形構件連接承載盤,環形構件位於承載盤的承載面的周圍,其中環形構件及蓋環分別設置一對應的對位單元,並透過對位單元對位環形構件及蓋環。The wafer carrying and fixing device and the thin film deposition equipment include an annular member connected to the carrying plate, the annular member is located around the carrying surface of the carrying plate, wherein the annular member and the cover ring are respectively provided with a corresponding alignment unit, and through the alignment The bit unit aligns the ring member and the cover ring.
所述的薄膜沉積設備,包括一靶材設置在腔體內,並面對承載盤及晶圓,承載盤位於擋件的開口內,並帶動蓋環離開擋件,以縮短承載盤上的晶圓與靶材之間的距離。The thin film deposition equipment includes a target set in the cavity and facing the carrier plate and the wafer. The carrier plate is located in the opening of the stopper and drives the cover ring away from the stopper to shorten the wafer on the carrier plate. The distance to the target.
請參閱圖1及圖2,分別為本新型晶圓承載固定裝置一實施例的剖面示意圖及本新型薄膜沉積設備操作在進出料狀態一實施例的剖面示意圖。如圖所示,晶圓承載固定裝置10用以承載及固定至少一晶圓12,主要包括至少一承載盤11、一擋件13及一蓋環15,其中擋件13用以承載蓋環15,而承載盤11則位於蓋環15及/或擋件13下方。Please refer to FIG. 1 and FIG. 2, which are respectively a cross-sectional schematic diagram of an embodiment of the novel wafer carrying and fixing device and a cross-sectional schematic diagram of an embodiment of the novel thin film deposition equipment operating in the feeding and discharging state. As shown in the figure, the wafer carrying and
承載盤11包括一承載面111,用以承載晶圓12。蓋環15及/或擋件13的俯視形狀近似環形,其中擋件13包括一側壁131、一環形底部133及一環形凸部135,環形底部133連接側壁131及環形凸部135。The
擋件13的側壁131的外觀近似圓筒狀、空心柱狀體、空心圓柱狀體或空心圓台狀體,其中擋件13的側壁131的一端可連接腔體17,而側壁131的另一端則連接環形底部133。The
環形底部133的外觀近似圓環狀,其中環形底部133的一端連接擋件13的側壁131,例如環形底部133的徑向外側連接側壁131的底端,其中側壁131與環形底部133之間的夾角約略為90度。The appearance of the
環形凸部135的外觀近似圓筒狀、空心柱狀體、空心圓柱狀體或空心圓台狀體,其中環形凸部135的一端連接環形底部133的徑向內側,並於環形凸部135的一徑向內側形成一開口132。具體而言,側壁131及環形凸部135分別連接環形底部133的徑向外側及徑向內側,並朝同一方向凸起或延伸,其中側壁131的高度大於環形凸部135。The appearance of the
蓋環15包括一主體部151及一遮擋部153,其中主體部151為一環狀體,而遮擋部153的外觀近似圓筒狀、空心柱狀體、空心圓柱狀體或空心圓台狀體。具體而言,遮擋部153連接主體部151的徑向外側,其中遮擋部153與主體部151之間的夾角約略為90度。The
蓋環15可用以放置在擋件13上,例如擋件13的環形凸部135用以承載蓋環15的主體部151的下表面。當蓋環15放置在擋件13的環形凸部135時,部分的主體部151會朝向擋件13的環形底部133及/或環形凸部135的徑向內側延伸,並位於擋件13的開口132的延伸位置,以遮蔽或覆蓋部分的開口132。此外部分的主體部151會朝擋件13的環形底部133及/或環形凸部135的徑向外側延伸,並遮擋或覆蓋大部分的環形底部133。The
具體而言,本新型所述的蓋環15會朝擋件13的側壁131延伸,並縮小蓋環15的遮擋部153與側壁131之間的間距,其中間距介於3至10毫米(mm)之間。透過本新型的蓋環15的特殊設計,可提高蓋環15及擋件13的遮擋效果,以減少反應氣體及/或沉積過程中產生的靶材原子及/或靶材分子接觸擋件13外部的腔體17。Specifically, the
如圖2所示的薄膜沉積設備100主要包括一腔體17及晶圓承載固定裝置10,其中晶圓承載固定裝置10位於腔體17的容置空間14內。擋件13的一端可連接腔體17,而另一端則用以承載蓋環15。承載盤11位於蓋環15及/或擋件13的下方,並可相對於蓋環15及/或擋件13位移。The thin
腔體17上可設置一晶圓進出口171,其中承載盤11可朝遠離蓋環15及/或擋件13的方向位移,使得承載盤11的承載面111的高度與晶圓進出口171相近。而後可透過一機械手臂經由晶圓進出口171,將腔體17外部的晶圓12放置在承載盤11的承載面111上。此外機械手臂亦可經由晶圓進出口171,將承載盤11的承載面111上的晶圓12輸送至腔體17外部。A wafer inlet and
在本新型一實施例中,薄膜沉積設備100可以是物理氣相沉積裝置,並於腔體17內設置一靶材19,其中靶材19面對承載盤11及/或晶圓12。腔體17上可設置至少一進氣口,其中進氣口流體連接腔體17的容置空間14,並用以將一製程氣體輸送至容置空間14內,以進行沉積製程,例如製程氣體可以是惰性氣體或反應氣體。此外亦可於腔體17上設置一抽氣口,並透過幫浦經由抽氣口將腔體17內的氣體抽出,使得容置空間14為低壓或真空。In an embodiment of the present invention, the thin
如圖3所示,承載盤11可帶動承載的晶圓12朝蓋環15、擋件13及/或靶材19的方向位移,使得承載盤11位於擋件13的開口132內,其中蓋環15的主體部151接觸承載盤11上的晶圓12,以將晶圓12固定在承載盤11上。此時承載盤11、蓋環15、擋件13及腔體17會在容置空間14內定義一反應空間141,並對反應空間141內的晶圓12表面進行薄膜沉積。反應空間141基本上為容置空間14內的隔離空間,其中反應空間141內的反應氣體、靶材原子及/或靶材分子不會接觸擋件13外部的腔體17,以避免在腔體17的表面沉積薄膜,進而造成腔體17的汙染。As shown in FIG. 3, the
如圖4及圖5所示,為於擋件13的開口132內的承載盤11可繼續帶動承載的晶圓12朝靶材19的方向位移,以縮短靶材19與承載盤11承載的晶圓12之間的距離。此時承載盤11亦會承載蓋環15,並帶動蓋環15離開擋件13。As shown in Figures 4 and 5, the
由於本新型的蓋環15的遮擋部153與擋件13的側壁131之間的間隙小於10毫米,因此即便承載盤11帶動蓋環15離開擋件13,仍可避免反應空間141內的反應氣體、靶材原子及/或靶材分子進入擋件13外部的容置空間14。Since the gap between the shielding
具體而言,透過本新型所述的薄膜沉積設備100,可避免在腔體17的內表面形成沉積薄膜的情況下,增加承載盤11承載的晶圓12與靶材19之間距離的可調整範圍。如此一來將可以依據沉積製程的需求,調整晶圓12與靶材19的距離,以提高沉積在晶圓12表面的薄膜均勻度。Specifically, through the thin
相較之下,一般的沉積腔體的承載盤11承載的晶圓12與靶材19之間距離的可調整範圍則較小,若欲縮小承載盤11與靶材19之間的間距,往往會造成蓋環15與擋件13之間產生過大的空隙,導致反應空間141內的反應氣體、靶材原子及/或靶材分子進入擋件13外部的容置空間14,進而在腔體17的內表面形成薄膜沉積。In contrast, the adjustable range of the distance between the
此外,本新型的蓋環15的遮擋部153與擋件13的側壁131之間的間隙會大於3毫米,以避免蓋環15與擋件13電性導通,並防止蓋環15的遮擋部153接觸或摩擦擋件13的側壁131,而產生微粒子的汙染。In addition, the gap between the shielding
在本新型一實施例中,如圖1所示,蓋環15與承載盤11之間可分別設置一對應的對位單元,例如在蓋環15的下表面設置一凸出部155,並在承載盤11上設置一凹部113,其中凸出部155與凹部113之間具有對應的斜面。當承載盤11朝蓋環15靠近時,蓋環15的凸出部155會接觸承載盤11的凹部113,並對位蓋環15及承載盤11。In an embodiment of the present invention, as shown in FIG. 1, a corresponding alignment unit may be provided between the
在本新型另一實施例中,承載盤11可包括一環形構件115,其中環形構件115位於承載盤11的承載面111周圍,並於蓋環15與環形構件115之間設置對應的對位單元,以對位蓋環15及環形構件115。In another embodiment of the present invention, the
在本新型一實施例中,晶圓承載固定裝置10可包括至少一升降單元161及一承載構件163,其中承載構件163設置在承載盤11上,並位於承載盤11承載的晶圓12下方,例如承載構件163的外觀可為環狀,並位於環形構件115的內側。In an embodiment of the present invention, the wafer carrying and fixing
升降單元161連接承載構件163及承載盤11,並用以帶動承載構件163相對於承載盤11位移,例如升降單元161可相對於承載盤11的承載面111伸長,並帶動承載構件163離開承載盤11,以透過承載構件163帶動晶圓12離開承載盤11的承載面111,有利於透過機械手臂拿取晶圓12。The
在本新型另一實施例中,升降單元161連接承載盤11,並位於承載盤11承載的晶圓12下方。升降單元161可相對於承載盤11的承載面111伸長,並帶動晶圓12離開承載盤11的承載面111,如此一來便不需要設置承載構件163。In another embodiment of the present invention, the
圖1的遮擋部153包括一第一凸起部1531及一第二凸起部1533,其中第一凸起部1531朝擋件13的環形底部133的方向凸起,而第二凸起部1533則朝遠離擋件13的環形底部133的方向凸起。The shielding
如圖5所示,蓋環15可包括一第一蓋環157及第二蓋環159,第一蓋環157及第二蓋環159的俯視形狀為環形,其中第一蓋環157的最大周長及/或最大半徑大於第二蓋環159的最大周長及/或最大半徑。第二蓋環159位於第一蓋環157的上方,並以第一蓋環157承載第二蓋環159。當承載盤11朝第一蓋環157及/或第二蓋環159位移時,第二蓋環159會接觸承載盤11承載的晶圓12的邊緣,並將晶圓12固定在承載盤11的承載面111。As shown in Figure 5, the
在實際應用時,可將第二蓋環159放置在第一蓋環157上,並透過第二蓋環159將尺寸較小的晶圓12固定在承載盤11上。此外,亦可將第二蓋環159由第一蓋環157上取下,並透過第一蓋環157將尺寸較大的晶圓12固定在承載盤11上。在以第一蓋環157將較大尺寸的晶圓12固定在承載盤11時,有可能需要更換承載盤11或在承載盤11上配置額外的構件。第一蓋環157及第二蓋環159之間可分別設置一對應的對位單元,並透對對位單元對位第一蓋環157及第二蓋環159。In practical applications, the
由於本新型相較於先前技術而言,蓋環15的長度、面積及重量可能較大,並會增加蓋環15施加給晶圓12的壓力,進而提高晶圓12破碎的機率。當蓋環15包括第一蓋環157及第二蓋環159時,可透過承載盤11承載第一蓋環157的重量,透過第二蓋環159接觸並將晶圓12固定在承載盤11上,可減少蓋環15施加在晶圓12上的壓力,降低晶圓12碎裂的機率。As compared with the prior art, the length, area and weight of the
如圖6所示,蓋環15的遮擋部153包括一第一凸起部1531,其中第一凸起部1531朝擋件13的環形底部133的方向凸起。如圖7所示,蓋環的遮擋部153包括一凸起部1535,其中凸起部1535朝遠離擋件13的環形底部133的方向凸起。As shown in FIG. 6, the shielding
由於本新型所述的蓋環15可提供良好的遮蔽效果,因此可進一步縮短擋件13的環形凸部135與遮擋部153的第一凸起部1531的高度,以在不影響蓋環15及擋件13對腔體17的遮蔽效果的情況下,增加承載盤11承載的晶圓12與靶材19之間的可調整距離,例如可在蓋環15的主體部151仍接觸晶圓12的前提下,增加晶圓12與靶材19之間的距離。Since the
以上所述者,僅為本新型之一較佳實施例而已,並非用來限定本新型實施之範圍,即凡依本新型申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本新型之申請專利範圍內。The foregoing is only one of the preferred embodiments of the present invention, and is not used to limit the scope of implementation of the present invention, that is, all the equivalent changes and changes in the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention Modifications should be included in the scope of the patent application for this new model.
10:晶圓承載固定裝置 100:薄膜沉積設備 11:承載盤 111:承載面 113:凹部 115:環形構件 12:晶圓 13:擋件 131:側壁 132:開口 133:環形底部 135:環形凸部 14:容置空間 141:反應空間 15:蓋環 151:主體部 153:遮擋部 1531:第一凸起部 1533:第二凸起部 1535:凸起部 155:凸出部 157:第一蓋環 159:第二蓋環 161:升降單元 163:承載構件 17:腔體 171:晶圓進出口 19:靶材 10: Wafer carrying fixture 100: Thin film deposition equipment 11: Carrier plate 111: bearing surface 113: Concave 115: Ring member 12: Wafer 13: stop 131: Sidewall 132: opening 133: Ring bottom 135: Ring convex 14: accommodating space 141: Reaction Space 15: cover ring 151: Main Body 153: Shading part 1531: first protrusion 1533: second protrusion 1535: bulge 155: Protruding part 157: first cover ring 159: second cover ring 161: Lifting unit 163: Load-bearing member 17: Cavity 171: Wafer Import and Export 19: Target
[圖1]為本新型晶圓承載固定裝置一實施例的剖面示意圖。[Fig. 1] is a schematic cross-sectional view of an embodiment of the novel wafer carrying and fixing device.
[圖2]為本新型薄膜沉積設備操作在進出料狀態一實施例的剖面示意圖。[Figure 2] is a schematic cross-sectional view of an embodiment of the new thin film deposition equipment operating in the feeding and discharging state.
[圖3]為本新型薄膜沉積設備操作在沉積狀態一實施例的剖面示意圖。[Figure 3] is a schematic cross-sectional view of an embodiment of the new thin film deposition equipment operating in the deposition state.
[圖4]為本新型薄膜沉積設備操作在沉積狀態又一實施例的剖面示意圖。[Figure 4] is a schematic cross-sectional view of another embodiment of the new thin film deposition equipment operating in the deposition state.
[圖5]為本新型晶圓承載固定裝置又一實施例的剖面示意圖。[Fig. 5] is a schematic cross-sectional view of another embodiment of the novel wafer carrying and fixing device.
[圖6]為本新型晶圓承載固定裝置又一實施例的剖面示意圖。[Fig. 6] is a schematic cross-sectional view of another embodiment of the novel wafer carrying and fixing device.
[圖7]為本新型晶圓承載固定裝置又一實施例的剖面示意圖。[Fig. 7] is a schematic cross-sectional view of another embodiment of the novel wafer carrier fixing device.
10:晶圓承載固定裝置 10: Wafer carrying fixture
11:承載盤 11: Carrier plate
111:承載面 111: bearing surface
113:凹部 113: Concave
115:環形構件 115: Ring member
12:晶圓 12: Wafer
13:擋件 13: stop
131:側壁 131: Sidewall
132:開口 132: opening
133:環形底部 133: Ring bottom
135:環形凸部 135: Ring convex
15:蓋環 15: cover ring
151:主體部 151: Main Body
153:遮擋部 153: Shading part
1531:第一凸起部 1531: first protrusion
1533:第二凸起部 1533: second protrusion
155:凸出部 155: Protruding part
161:升降單元 161: Lifting unit
163:承載構件 163: Load-bearing member
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110210293U TWM620754U (en) | 2021-08-31 | 2021-08-31 | Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110210293U TWM620754U (en) | 2021-08-31 | 2021-08-31 | Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM620754U true TWM620754U (en) | 2021-12-01 |
Family
ID=80679943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110210293U TWM620754U (en) | 2021-08-31 | 2021-08-31 | Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM620754U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115074690A (en) * | 2022-06-24 | 2022-09-20 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
CN115642112A (en) * | 2022-11-24 | 2023-01-24 | 西安奕斯伟材料科技有限公司 | Back sealing device and method for silicon wafer |
-
2021
- 2021-08-31 TW TW110210293U patent/TWM620754U/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115074690A (en) * | 2022-06-24 | 2022-09-20 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
CN115074690B (en) * | 2022-06-24 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
CN115642112A (en) * | 2022-11-24 | 2023-01-24 | 西安奕斯伟材料科技有限公司 | Back sealing device and method for silicon wafer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI852945B (en) | Plasma processing apparatus | |
US9099513B2 (en) | Substrate processing apparatus, and substrate processing method | |
US10103007B2 (en) | Plasma processing apparatus with gas feed and evacuation conduit | |
CN109890999B (en) | Carrier plate for plasma processing system | |
TWI752283B (en) | Shutter disk assembly, semiconductor processing apparatus and method | |
TWM620754U (en) | Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device | |
KR20230123473A (en) | Thin substrate handling with edge clamping | |
CN216614824U (en) | Substrate bearing and fixing device and thin film deposition equipment | |
US10968514B2 (en) | Substrate mounting table | |
CN214193444U (en) | Film deposition equipment for reducing fine dust and shielding component thereof | |
KR20230122016A (en) | Deposition ring for thin substrate handling with edge clamping | |
TWM610049U (en) | Thin film deposition equipment capable of inhibiting dust and shielding component thereof | |
TWI783658B (en) | Wafer carrying and fixing mechanism and thin film deposition equipment using the same | |
CN214088650U (en) | Thin film deposition apparatus | |
TWM614087U (en) | Substrate carrying and fixing device and film deposition facility using the substrate carrying and fixing device | |
CN115725947A (en) | Substrate bearing and fixing mechanism and thin film deposition equipment | |
KR101841034B1 (en) | Plasma device | |
TWM610249U (en) | Thin-film deposition apparatus | |
TWI745240B (en) | Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device | |
CN215757587U (en) | Film deposition machine capable of improving deposition uniformity and shielding mechanism thereof | |
TWI792523B (en) | Thin film deposition equipment for improving deposition uniformity and shielding member thereof | |
CN115717235B (en) | Thin film deposition machine capable of improving deposition uniformity and shielding component thereof | |
TWI761270B (en) | Wafer pre-cleaning apparatus | |
US20240153747A1 (en) | Substrate supporting unit, apparatus for treating substrate including the same, and ring transfer method | |
TW202336893A (en) | Control method of a substrate holder of deposition equipment |