TWI783658B - Wafer carrying and fixing mechanism and thin film deposition equipment using the same - Google Patents
Wafer carrying and fixing mechanism and thin film deposition equipment using the same Download PDFInfo
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本發明有關於一種晶圓承載固定機構,用以將晶圓固定在承載盤上,並可減少製程氣體或靶材原子污染腔體。 The invention relates to a wafer carrying and fixing mechanism, which is used to fix the wafer on the carrying plate, and can reduce process gas or target material atoms from polluting the cavity.
化學氣相沉積(CVD)、物理氣相沉積(PVD)及原子層沉積(ALD)皆是常用的薄膜沉積設備,並普遍被使用在積體電路、發光二極體及顯示器等製程中。 Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) and Atomic Layer Deposition (ALD) are commonly used thin film deposition equipment, and are widely used in the manufacturing processes of integrated circuits, light-emitting diodes and displays.
沉積的設備主要包括一腔體及一承載盤,其中承載盤位於腔體內,並用以承載至少一晶圓。以物理氣相沉積為例,腔體內需要設置一靶材,其中靶材面對承載盤上的晶圓。在進行物理氣相沉積時,會透過固定裝置將晶圓固定在承載盤上,並將惰性氣體及/或反應氣體輸送至腔體內,分別對靶材及承載盤施加偏壓,其中承載盤還會加熱承載的晶圓。腔體內的惰性氣體會因為高壓電場的作用,形成離子化的惰性氣體。離子化的惰性氣體會受到靶材上的偏壓吸引而轟擊靶材。從靶材濺出的靶材原子或分子會受到承載盤上的偏壓吸引,並沉積在加熱的晶圓的表面,以在晶圓的表面形成薄膜。 The deposition equipment mainly includes a cavity and a carrier plate, wherein the carrier plate is located in the cavity and is used to carry at least one wafer. Taking physical vapor deposition as an example, a target needs to be set in the chamber, wherein the target faces the wafer on the carrier. During physical vapor deposition, the wafer will be fixed on the carrier plate through the fixing device, and the inert gas and/or reaction gas will be transported into the chamber, and the bias voltage will be applied to the target material and the carrier plate respectively. The loaded wafer is heated. The inert gas in the chamber will form an ionized inert gas due to the action of the high-voltage electric field. The ionized noble gas is attracted by the bias voltage on the target and bombards the target. Target atoms or molecules sputtered from the target are attracted by the bias voltage on the susceptor plate and deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.
此外在進行物理氣相沉積製程時,承載盤可相對於靶材位移,並改變承載盤承載的晶圓與靶材之間的距離,以調整沉積製程的參數。 In addition, during the physical vapor deposition process, the carrier plate can be displaced relative to the target material, and the distance between the wafer carried by the carrier plate and the target material can be changed to adjust the parameters of the deposition process.
如先前技術所述,習用的薄膜沉積設備雖然可以透過調整承載盤與靶材之間的距離,改變沉積製程的參數。然而習用的薄膜沉積設備的承載盤與靶材之間的距離可調整幅度很小,當承載盤朝靶材的方向位移時,可能會造成製程氣體及/或靶材原子及/或靶材分子傳遞至腔體,並在腔體的內表面形成薄膜沉積,進而對腔體造成汙染。為此本發明提出一種新穎的晶圓承載固定機構及應用該晶圓承載固定機構的薄膜沉積設備,可增加承載盤與靶材之間距離的可調整幅度,並可減少製程氣體及/或靶材原子及/或靶材分子進入腔體。 As mentioned in the prior art, conventional thin film deposition equipment can change the parameters of the deposition process by adjusting the distance between the carrier plate and the target. However, the distance between the carrier plate and the target of the conventional thin film deposition equipment can be adjusted very little. When the carrier plate moves towards the target, it may cause the process gas and/or target atoms and/or target molecules Transfer to the cavity, and form film deposits on the inner surface of the cavity, thereby polluting the cavity. For this reason, the present invention proposes a novel wafer carrying and fixing mechanism and film deposition equipment using the wafer carrying and fixing mechanism, which can increase the adjustable range of the distance between the carrying plate and the target, and can reduce the process gas and/or target. material atoms and/or target molecules enter the cavity.
本發明的一目的,在於提出一種晶圓承載固定機構及薄膜沉積設備,主要包括一承載盤、一蓋環及一擋件,其中承載盤用以承載至少一晶圓。擋件用以承載蓋環,當承載盤帶動承載的晶圓朝蓋環的方向靠近時蓋環會接觸晶圓,以將晶圓固定在承載盤上,並於擋件、蓋環、承載盤及/或腔體之間形成一反應空間。 An object of the present invention is to provide a wafer carrying and fixing mechanism and thin film deposition equipment, which mainly include a carrying plate, a cover ring and a stopper, wherein the carrying plate is used to carry at least one wafer. The stopper is used to carry the cover ring. When the carrying plate drives the carried wafer towards the direction of the cover ring, the cover ring will contact the wafer to fix the wafer on the support plate. And/or a reaction space is formed between the cavities.
本發明的蓋環的側邊與擋件之間的間距小於10毫米,以提高蓋環及擋件對腔體的遮擋效果,可避免反應空間內的反應氣體、靶材原子及/或靶材分子接觸蓋環及/或擋件外部的腔體,以減少腔體內表面上的薄膜沉積。 The distance between the side of the cover ring and the stopper of the present invention is less than 10 mm, so as to improve the shielding effect of the cover ring and the stopper on the cavity, and avoid reaction gas, target atoms and/or target materials in the reaction space Molecules contact the cavity outside the cover ring and/or the barrier to reduce film deposition on the inner surfaces of the cavity.
此外承載盤可帶動承載的晶圓及蓋環繼續往靶材的方向靠近,使得蓋環離開擋件,以進一步縮短晶圓與靶材之間的距離。由於本發明的蓋 環與擋件之間的間距較小,即便蓋環離開擋件,蓋環及擋件仍可提供良好的遮擋效果,可避免反應空間內的反應氣體、靶材原子及/或靶材分子傳遞至蓋環及/或擋件外側的腔體。 In addition, the carrying plate can drive the carried wafer and the cover ring to continue to approach the target, so that the cover ring leaves the stopper, so as to further shorten the distance between the wafer and the target. Due to the cover of the present invention The distance between the ring and the baffle is small, even if the cover ring is away from the baffle, the cover ring and the baffle can still provide a good shielding effect, which can avoid the transfer of reaction gas, target atoms and/or target molecules in the reaction space to the cavity outside the cover ring and/or stopper.
本發明的一目的,在於提出一種晶圓承載固定機構及薄膜沉積設備,其中蓋環包括一第一蓋環及一第二蓋環,且第一蓋環的半徑大於第二蓋環,並用以承載第二蓋環。當承載盤與蓋環接觸時,只有第二蓋環會接觸承載盤上的晶圓,而承載盤則用以承載第一蓋環。透過第一蓋環及第二蓋環的設計可減少蓋環施加在晶圓上的壓力,並降低晶圓被蓋環壓碎的機率。 An object of the present invention is to provide a wafer carrying and fixing mechanism and thin film deposition equipment, wherein the cover ring includes a first cover ring and a second cover ring, and the radius of the first cover ring is larger than that of the second cover ring, and is used for Carries the second cover ring. When the susceptor is in contact with the cover ring, only the second cover ring contacts the wafer on the susceptor, and the susceptor is used to carry the first cover ring. Through the design of the first cover ring and the second cover ring, the pressure exerted by the cover ring on the wafer can be reduced, and the probability of the wafer being crushed by the cover ring can be reduced.
為了達到上述的目的,本發明提出一種晶圓承載固定機構,包括:一擋件,包括一側壁、一環形底部及一環形凸部,其中環形底部連接側壁及環形凸部,並於環形凸部的一徑向內側形成一開口;一蓋環,用以放置在擋件上,並包括:一主體部,主體部為一環狀體,其中部分主體部位於擋件的開口的延伸位置;一遮擋部,連接主體部的一徑向外側,並包括一第一凸起部朝擋件的環形底部的方向凸起,或朝遠離擋件的環形底部的方向凸起,其中遮擋部與擋件的側壁之間的間距介於3至10毫米之間;及一承載盤,包括一承載面用以承載一晶圓,其中承載盤位於蓋環的下方,當承載盤帶動晶圓朝蓋環位移時,蓋環的主體部會接觸晶圓。 In order to achieve the above object, the present invention proposes a wafer carrying and fixing mechanism, including: a stopper, including a side wall, an annular bottom and an annular convex portion, wherein the annular bottom connects the side wall and the annular convex portion, and is connected to the annular convex portion A radial inner side forms an opening; a cover ring is used to be placed on the stopper, and includes: a main body, the main body is an annular body, and part of the main body is located at the extension position of the opening of the stopper; The shielding portion is connected to a radially outer side of the main body, and includes a first protruding portion protruding toward the direction of the annular bottom of the blocking member, or protruding toward a direction away from the annular bottom of the blocking member, wherein the shielding portion and the blocking member The distance between the side walls is between 3 and 10 millimeters; and a carrying plate, including a carrying surface for carrying a wafer, wherein the carrying plate is located under the cover ring, when the carrying plate drives the wafer to move towards the cover ring , the main body of the cover ring contacts the wafer.
本發明提供一種薄膜沉積設備,包括:一腔體,包括一容置空間;一晶圓承載固定機構,位於容置空間內,包括:一擋件,包括一側壁、一環形底部及一環形凸部,其中側壁連接腔體,而環形底部連接側壁及環形凸部,並於環形凸部的一徑向內側形成一開口;一蓋環,用以放置在擋件 上,並包括:一主體部,主體部為一環狀體,其中部分主體部位於擋件的開口的延伸位置;一遮擋部,連接主體部的一徑向外側,並包括一第一凸起部朝擋件的環形底部的方向凸起,其中遮擋部與擋件的側壁之間的間距介於3至10毫米之間;及一承載盤,包括一承載面用以承載一晶圓,其中承載盤位於蓋環的下方,當承載盤帶動晶圓朝蓋環位移時,蓋環的主體部會接觸晶圓。 The present invention provides a thin film deposition equipment, comprising: a cavity, including an accommodating space; a wafer carrying and fixing mechanism, located in the accommodating space, including: a stopper, including a side wall, an annular bottom and an annular convex part, wherein the side wall is connected to the cavity, and the annular bottom is connected to the side wall and the annular convex part, and an opening is formed on a radial inner side of the annular convex part; a cover ring is used to place the stopper above, and includes: a main body, the main body is an annular body, part of the main body is located at the extension position of the opening of the stopper; a shielding part, connected to a radially outer side of the main body, and includes a first protrusion The portion protrudes toward the annular bottom of the blocking member, wherein the distance between the blocking portion and the side wall of the blocking member is between 3 mm and 10 mm; and a carrying tray includes a carrying surface for carrying a wafer, wherein The carrying plate is located under the cover ring, and when the carrying plate drives the wafer to move toward the cover ring, the main body of the cover ring will contact the wafer.
所述的晶圓承載固定機構及薄膜沉積設備,其中遮擋部包括一第二凸起部,朝遠離擋件的環形底部的方向凸起。 In the wafer carrying and fixing mechanism and thin film deposition equipment, the shielding portion includes a second raised portion that protrudes away from the ring-shaped bottom of the shielding member.
所述的晶圓承載固定機構及薄膜沉積設備,其中蓋環及承載盤分別設置一對應的對位單元,並透過對位單元對位蓋環及承載盤。 In the wafer carrying and fixing mechanism and thin film deposition equipment, the cover ring and the carrier plate are respectively provided with a corresponding alignment unit, and the cover ring and the carrier plate are aligned through the alignment unit.
所述的晶圓承載固定機構及薄膜沉積設備,其中蓋環包括一第一蓋環及一第二蓋環,第一蓋環的周長大於第二蓋環,並用以承載第二蓋環,當承載盤朝蓋環位移時,承載盤用以承載第一蓋環,而第二蓋環會接觸晶圓,第一蓋環及第二蓋環分別設置一對應的對位單元,並透過對位單元對位第二蓋環及第一蓋環。 The wafer carrying and fixing mechanism and thin film deposition equipment, wherein the cover ring includes a first cover ring and a second cover ring, the circumference of the first cover ring is larger than that of the second cover ring, and is used to carry the second cover ring, When the carrier plate is displaced toward the cover ring, the carrier plate is used to carry the first cover ring, and the second cover ring will contact the wafer. The first cover ring and the second cover ring are respectively provided with a corresponding alignment unit, and through the alignment The bit unit aligns the second cover ring and the first cover ring.
所述的晶圓承載固定機構及薄膜沉積設備,包括一環形構件連接承載盤,環形構件位於承載盤的承載面的周圍,其中環形構件及蓋環分別設置一對應的對位單元,並透過對位單元對位環形構件及蓋環。 The wafer carrying and fixing mechanism and thin film deposition equipment include a ring member connected to the carrier plate, the ring member is located around the carrying surface of the carrier plate, wherein the ring member and the cover ring are respectively provided with a corresponding alignment unit, and through the opposite The bit unit alignment ring member and the cover ring.
所述的薄膜沉積設備,包括一靶材設置在腔體內,並面對承載盤及晶圓,承載盤位於擋件的開口內,並帶動蓋環離開擋件,以縮短承載盤上的晶圓與靶材之間的距離。 The thin film deposition equipment includes a target arranged in the cavity, facing the carrier plate and the wafer, the carrier plate is located in the opening of the stopper, and drives the cover ring away from the stopper, so as to shorten the wafer on the carrier plate distance from the target.
10:晶圓承載固定機構 10: Wafer carrying and fixing mechanism
100:薄膜沉積設備 100: Thin film deposition equipment
11:承載盤 11: carrying plate
111:承載面 111: bearing surface
113:凹部 113: concave part
115:環形構件 115: ring member
12:晶圓 12:Wafer
13:擋件 13: block
131:側壁 131: side wall
132:開口 132: opening
133:環形底部 133: ring bottom
135:環形凸部 135: Annular convex part
14:容置空間 14:Accommodating space
141:反應空間 141: Reaction space
15:蓋環 15: Cover ring
151:主體部 151: Main body
153:遮擋部 153: Covering Department
1531:第一凸起部 1531: the first raised part
1533:第二凸起部 1533: second raised portion
1535:凸起部 1535: Raised part
155:凸出部 155: protruding part
157:第一蓋環 157: First cover ring
159:第二蓋環 159: second cover ring
161:升降單元 161: Lifting unit
163:承載構件 163: Bearing member
17:腔體 17: Cavity
171:晶圓進出口 171:Wafer import and export
19:靶材 19: target
[圖1]為本發明晶圓承載固定機構一實施例的剖面示意圖。 [ FIG. 1 ] is a schematic cross-sectional view of an embodiment of the wafer carrying and fixing mechanism of the present invention.
[圖2]為本發明薄膜沉積設備操作在進出料狀態一實施例的剖面示意圖。 [ Fig. 2 ] is a schematic cross-sectional view of an embodiment of the thin film deposition equipment of the present invention operating in the feeding and discharging state.
[圖3]為本發明薄膜沉積設備操作在沉積狀態一實施例的剖面示意圖。 [ Fig. 3 ] is a schematic cross-sectional view of an embodiment of the thin film deposition apparatus of the present invention operating in a deposition state.
[圖4]為本發明薄膜沉積設備操作在沉積狀態又一實施例的剖面示意圖。 [ Fig. 4 ] is a schematic cross-sectional view of another embodiment of the thin film deposition apparatus of the present invention operating in the deposition state.
[圖5]為本發明晶圓承載固定機構又一實施例的剖面示意圖。 [ FIG. 5 ] is a schematic cross-sectional view of another embodiment of the wafer carrying and fixing mechanism of the present invention.
[圖6]為本發明晶圓承載固定機構又一實施例的剖面示意圖。 [ FIG. 6 ] is a schematic cross-sectional view of another embodiment of the wafer carrying and fixing mechanism of the present invention.
[圖7]為本發明晶圓承載固定機構又一實施例的剖面示意圖。 [ FIG. 7 ] is a schematic cross-sectional view of another embodiment of the wafer carrying and fixing mechanism of the present invention.
請參閱圖1及圖2,分別為本發明晶圓承載固定機構一實施例的剖面示意圖及本發明薄膜沉積設備操作在進出料狀態一實施例的剖面示意圖。如圖所示,晶圓承載固定機構10用以承載及固定至少一晶圓12,主要包括至少一承載盤11、一擋件13及一蓋環15,其中擋件13用以承載蓋環15,而承載盤11則位於蓋環15及/或擋件13下方。
Please refer to FIG. 1 and FIG. 2 , which are respectively a schematic cross-sectional view of an embodiment of the wafer carrying and fixing mechanism of the present invention and a schematic cross-sectional view of an embodiment of the thin-film deposition device of the present invention operating in the loading and unloading state. As shown in the figure, the wafer carrying and fixing
承載盤11包括一承載面111,用以承載晶圓12。蓋環15及/或擋件13的俯視形狀近似環形,其中擋件13包括一側壁131、一環形底部133及一環形凸部135,環形底部133連接側壁131及環形凸部135。
The carrying
擋件13的側壁131的外觀近似圓筒狀、空心柱狀體、空心圓柱狀體或空心圓台狀體,其中擋件13的側壁131的一端可連接腔體17,而側壁131的另一端則連接環形底部133。
The appearance of the
環形底部133的外觀近似圓環狀,其中環形底部133的一端連接擋件13的側壁131,例如環形底部133的徑向外側連接側壁131的底端,其中側壁131與環形底部133之間的夾角約略為90度。
The appearance of the
環形凸部135的外觀近似圓筒狀、空心柱狀體、空心圓柱狀體或空心圓台狀體,其中環形凸部135的一端連接環形底部133的徑向內側,並於環形凸部135的一徑向內側形成一開口132。具體而言,側壁131及環形凸部135分別連接環形底部133的徑向外側及徑向內側,並朝同一方向凸起或延伸,其中側壁131的高度大於環形凸部135。
The appearance of the annular
蓋環15包括一主體部151及一遮擋部153,其中主體部151為一環狀體,而遮擋部153的外觀近似圓筒狀、空心柱狀體、空心圓柱狀體或空心圓台狀體。具體而言,遮擋部153連接主體部151的徑向外側,其中遮擋部153與主體部151之間的夾角約略為90度。
The
蓋環15可用以放置在擋件13上,例如擋件13的環形凸部135用以承載蓋環15的主體部151的下表面。當蓋環15放置在擋件13的環形凸部135時,部分的主體部151會朝向擋件13的環形底部133及/或環形凸部135的徑向內側延伸,並位於擋件13的開口132的延伸位置,以遮蔽或覆蓋部分的開口132。此外部分的主體部151會朝擋件13的環形底部133及/或環形凸部135的徑向外側延伸,並遮擋或覆蓋大部分的環形底部133。
The
具體而言,本發明所述的蓋環15會朝擋件13的側壁131延伸,並縮小蓋環15的遮擋部153與側壁131之間的間距,其中間距介於3至10毫米(mm)之間。透過本發明的蓋環15的特殊設計,可提高蓋環15及擋件13的遮擋效果,以減少反應氣體及/或沉積過程中產生的靶材原子及/或靶材分子接觸擋件13外部的腔體17。
Specifically, the
如圖2所示的薄膜沉積設備100主要包括一腔體17及晶圓承載固定機構10,其中晶圓承載固定機構10位於腔體17的容置空間14內。擋件13的一端可連接腔體17,而另一端則用以承載蓋環15。承載盤11位於蓋環15及/或擋件13的下方,並可相對於蓋環15及/或擋件13位移。
The thin
腔體17上可設置一晶圓進出口171,其中承載盤11可朝遠離蓋環15及/或擋件13的方向位移,使得承載盤11的承載面111的高度與晶圓進出口171相近。而後可透過一機械手臂經由晶圓進出口171,將腔體17外部的晶圓12放置在承載盤11的承載面111上。此外機械手臂亦可經由晶圓進出口171,將承載盤11的承載面111上的晶圓12輸送至腔體17外部。
A wafer inlet and
在本發明一實施例中,薄膜沉積設備100可以是物理氣相沉積裝置,並於腔體17內設置一靶材19,其中靶材19面對承載盤11及/或晶圓12。腔體17上可設置至少一進氣口,其中進氣口流體連接腔體17的容置空間14,並用以將一製程氣體輸送至容置空間14內,以進行沉積製程,例如製程氣體可以是惰性氣體或反應氣體。此外亦可於腔體17上設置一抽氣口,並透過幫浦經由抽氣口將腔體17內的氣體抽出,使得容置空間14為低壓或真空。
In an embodiment of the present invention, the thin
如圖3所示,承載盤11可帶動承載的晶圓12朝蓋環15、擋件13及/或靶材19的方向位移,使得承載盤11位於擋件13的開口132內,其中蓋環15的主體部151接觸承載盤11上的晶圓12,以將晶圓12固定在承載盤11上。此時承載盤11、蓋環15、擋件13及腔體17會在容置空間14內定義一反應空間141,並對反應空間141內的晶圓12表面進行薄膜沉積。反應空間141基本上為容置空間14內的隔離空間,其中反應空間141內的反應氣體、靶材原子及/或靶材分子不會接觸擋件13外部的腔體17,以避免在腔體17的表面沉積薄膜,進而造成腔體17的汙染。
As shown in FIG. 3 , the carrying
如圖4及圖5所示,為於擋件13的開口132內的承載盤11可繼續帶動承載的晶圓12朝靶材19的方向位移,以縮短靶材19與承載盤11承載的晶圓12之間的距離。此時承載盤11亦會承載蓋環15,並帶動蓋環15離開擋件13。
As shown in FIGS. 4 and 5 , the carrying
由於本發明的蓋環15的遮擋部153與擋件13的側壁131之間的間隙小於10毫米,因此即便承載盤11帶動蓋環15離開擋件13,仍可避免反應空間141內的反應氣體、靶材原子及/或靶材分子進入擋件13外部的容置空間14。
Since the gap between the shielding
具體而言,透過本發明所述的薄膜沉積設備100,可避免在腔體17的內表面形成沉積薄膜的情況下,增加承載盤11承載的晶圓12與靶材19之間距離的可調整範圍。如此一來將可以依據沉積製程的需求,調整晶圓12與靶材19的距離,以提高沉積在晶圓12表面的薄膜均勻度。
Specifically, through the thin
相較之下,一般的沉積腔體的承載盤11承載的晶圓12與靶材19之間距離的可調整範圍則較小,若欲縮小承載盤11與靶材19之間的間距,
往往會造成蓋環15與擋件13之間產生過大的空隙,導致反應空間141內的反應氣體、靶材原子及/或靶材分子進入擋件13外部的容置空間14,進而在腔體17的內表面形成薄膜沉積。
In contrast, the adjustable range of the distance between the
此外,本發明的蓋環15的遮擋部153與擋件13的側壁131之間的間隙會大於3毫米,以避免蓋環15與擋件13電性導通,並防止蓋環15的遮擋部153接觸或摩擦擋件13的側壁131,而產生微粒子的汙染。
In addition, the gap between the shielding
在本發明一實施例中,如圖1所示,蓋環15與承載盤11之間可分別設置一對應的對位單元,例如在蓋環15的下表面設置一凸出部155,並在承載盤11上設置一凹部113,其中凸出部155與凹部113之間具有對應的斜面。當承載盤11朝蓋環15靠近時,蓋環15的凸出部155會接觸承載盤11的凹部113,並對位蓋環15及承載盤11。
In an embodiment of the present invention, as shown in FIG. 1 , a corresponding alignment unit can be provided between the
在本發明另一實施例中,承載盤11可包括一環形構件115,其中環形構件115位於承載盤11的承載面111周圍,並於蓋環15與環形構件115之間設置對應的對位單元,以對位蓋環15及環形構件115。
In another embodiment of the present invention, the
在本發明一實施例中,晶圓承載固定機構10可包括至少一升降單元161及一承載構件163,其中承載構件163設置在承載盤11上,並位於承載盤11承載的晶圓12下方,例如承載構件163的外觀可為環狀,並位於環形構件115的內側。
In an embodiment of the present invention, the wafer carrying and fixing
升降單元161連接承載構件163及承載盤11,並用以帶動承載構件163相對於承載盤11位移,例如升降單元161可相對於承載盤11的承載面111伸長,並帶動承載構件163離開承載盤11,以透過承載構件163帶動晶圓12離開承載盤11的承載面111,有利於透過機械手臂拿取晶圓12。
The
在本發明另一實施例中,升降單元161連接承載盤11,並位於承載盤11承載的晶圓12下方。升降單元161可相對於承載盤11的承載面111伸長,並帶動晶圓12離開承載盤11的承載面111,如此一來便不需要設置承載構件163。
In another embodiment of the present invention, the
圖1的遮擋部153包括一第一凸起部1531及一第二凸起部1533,其中第一凸起部1531朝擋件13的環形底部133的方向凸起,而第二凸起部1533則朝遠離擋件13的環形底部133的方向凸起。
The shielding
如圖5所示,蓋環15可包括一第一蓋環157及第二蓋環159,第一蓋環157及第二蓋環159的俯視形狀為環形,其中第一蓋環157的最大周長及/或最大半徑大於第二蓋環159的最大周長及/或最大半徑。第二蓋環159位於第一蓋環157的上方,並以第一蓋環157承載第二蓋環159。當承載盤11朝第一蓋環157及/或第二蓋環159位移時,第二蓋環159會接觸承載盤11承載的晶圓12的邊緣,並將晶圓12固定在承載盤11的承載面111。
As shown in Figure 5, the
在實際應用時,可將第二蓋環159放置在第一蓋環157上,並透過第二蓋環159將尺寸較小的晶圓12固定在承載盤11上。此外,亦可將第二蓋環159由第一蓋環157上取下,並透過第一蓋環157將尺寸較大的晶圓12固定在承載盤11上。在以第一蓋環157將較大尺寸的晶圓12固定在承載盤11時,有可能需要更換承載盤11或在承載盤11上配置額外的構件。第一蓋環157及第二蓋環159之間可分別設置一對應的對位單元,並透對對位單元對位第一蓋環157及第二蓋環159。
In actual application, the
由於本發明相較於先前技術而言,蓋環15的長度、面積及重量可能較大,並會增加蓋環15施加給晶圓12的壓力,進而提高晶圓12破碎的機
率。當蓋環15包括第一蓋環157及第二蓋環159時,可透過承載盤11承載第一蓋環157的重量,透過第二蓋環159接觸並將晶圓12固定在承載盤11上,可減少蓋環15施加在晶圓12上的壓力,降低晶圓12碎裂的機率。
Compared with the prior art, the present invention may have larger length, area and weight of the
如圖6所示,蓋環15的遮擋部153包括一第一凸起部1531,其中第一凸起部1531朝擋件13的環形底部133的方向凸起。如圖7所示,蓋環的遮擋部153包括一凸起部1535,其中凸起部1535朝遠離擋件13的環形底部133的方向凸起。
As shown in FIG. 6 , the shielding
由於本發明所述的蓋環15可提供良好的遮蔽效果,因此可進一步縮短擋件13的環形凸部135與遮擋部153的第一凸起部1531的高度,以在不影響蓋環15及擋件13對腔體17的遮蔽效果的情況下,增加承載盤11承載的晶圓12與靶材19之間的可調整距離,例如可在蓋環15的主體部151仍接觸晶圓12的前提下,增加晶圓12與靶材19之間的距離。
Since the
以上所述者,僅為本發明之一較佳實施例而已,並非用來限定本發明實施之範圍,即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。 The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of the present invention, that is, all changes and equal changes made according to the shape, structure, characteristics and spirit described in the patent scope of the present invention Modifications should be included in the patent application scope of the present invention.
10:晶圓承載固定機構 10: Wafer carrying and fixing mechanism
11:承載盤 11: carrying plate
111:承載面 111: bearing surface
113:凹部 113: concave part
115:環形構件 115: ring member
12:晶圓 12:Wafer
13:擋件 13: block
131:側壁 131: side wall
132:開口 132: opening
133:環形底部 133: ring bottom
135:環形凸部 135: Annular convex part
15:蓋環 15: Cover ring
151:主體部 151: Main body
153:遮擋部 153: Covering Department
1531:第一凸起部 1531: the first raised part
1533:第二凸起部 1533: second raised portion
155:凸出部 155: protruding part
161:升降單元 161: Lifting unit
163:承載構件 163: Bearing member
Claims (7)
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TW441845U (en) * | 1998-11-02 | 2001-06-16 | Taiwan Semiconductor Mfg | Self-alignment mechanism for mark shielding clamp ring application in PVD process chamber and process chamber using the same |
TW201413027A (en) * | 2012-09-05 | 2014-04-01 | Applied Materials Inc | Target center positional constraint for physical vapor deposition (PVD) processing systems |
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TW202118357A (en) * | 2019-10-18 | 2021-05-01 | 台灣積體電路製造股份有限公司 | Thin film deposition chamber, multi-functional shutter disk and method for using the multi-functional shutter disk |
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TWM614322U (en) * | 2021-02-19 | 2021-07-11 | 天虹科技股份有限公司 | Wafer carrier plate for generating stable bias voltage and thin film deposition equipment using the wafer carrier plate |
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TW441845U (en) * | 1998-11-02 | 2001-06-16 | Taiwan Semiconductor Mfg | Self-alignment mechanism for mark shielding clamp ring application in PVD process chamber and process chamber using the same |
TW201413027A (en) * | 2012-09-05 | 2014-04-01 | Applied Materials Inc | Target center positional constraint for physical vapor deposition (PVD) processing systems |
TWM566213U (en) * | 2018-04-03 | 2018-09-01 | 力鼎精密股份有限公司 | Wafer shield for physical vapor deposition coating |
TW202118357A (en) * | 2019-10-18 | 2021-05-01 | 台灣積體電路製造股份有限公司 | Thin film deposition chamber, multi-functional shutter disk and method for using the multi-functional shutter disk |
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