TWM614322U - Wafer carrier plate for generating stable bias voltage and thin film deposition equipment using the wafer carrier plate - Google Patents

Abstract

The present invention relates to a wafer carrier plate for generating a stable bias voltage, which mainly includes a carrier plate, a ring member and a cover ring, wherein a carrier surface of the carrier plate is used to carry at least one wafer, and the ring member It is arranged on the carrying plate and located around the carrying surface and the wafer. The ring-shaped member includes an outer surface and an inner surface, wherein the inner surface of the ring-shaped member covers a part of the side surface of the carrying plate and makes a part of the side surface of the carrying plate exposed. When the cover ring is connected to the ring member, the shielding portion of the cover ring will cover the exposed side of the carrier plate to avoid forming a film on the exposed side of the carrier plate, so as to facilitate the formation of a uniform and stable bias on the carrier plate.

Description

Wafer carrier plate for generating stable bias voltage and thin film deposition equipment using the wafer carrier plate

The present invention relates to a wafer carrier plate for generating a stable bias voltage, in which part of the sides of the carrier plate are exposed, and the exposed sides of the carrier plate are covered by a cover ring to facilitate the formation of a uniform and stable bias voltage on the carrier plate .

Chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) are all commonly used thin film deposition equipment, and are commonly used in integrated circuits, light-emitting diodes, and display manufacturing processes.

The deposition equipment mainly includes a cavity and a wafer carrier. The wafer carrier is located in the cavity and used to carry at least one wafer. Taking physical vapor deposition as an example, a target material needs to be set in the cavity, where the target material faces the wafer on the wafer carrier. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the cavity, bias voltage is applied to the target and wafer carrier respectively, and the wafer carried by the wafer carrier is heated through the wafer carrier. The inert gas in the cavity forms ionized inert gas due to the action of the high-voltage electric field, and the ionized inert gas is attracted by the bias voltage on the target material and bombards the target material. The target atoms or molecules sputtered from the target are attracted by the bias voltage on the wafer carrier and are deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.

Specifically, the bias voltage and temperature stability generated by the wafer carrier will have a considerable impact on the quality of the film deposition on the wafer surface. For this reason, how to make the wafer carrier generate a stable temperature and bias is a thin film. One of the important topics in the deposition process.

As described in the prior art, during the deposition process, it is usually necessary to form a bias on the wafer carrier and heat the loaded wafer through the wafer carrier to improve the quality and uniformity of the film deposited on the wafer surface. For this reason, the present invention proposes a novel wafer carrier, which mainly covers the exposed side of the wafer carrier through a cover ring to avoid depositing a thin film on the exposed side of the wafer carrier to facilitate uniform and stable formation on the carrier.的bias voltage.

An object of the present invention is to provide a wafer carrier plate for generating a stable bias, which mainly includes a carrier plate, a ring member and a cover ring, wherein the carrier plate includes a carrier surface and at least one side surface, and the side surface is located at Around the bearing surface. The carrying surface of the carrying plate is used to carry at least one wafer, and the ring member contacts or connects to the side surface of the carrying plate and is located around the carrying surface and the wafer.

The ring member includes an inner surface and an outer surface, wherein the inner surface of the ring member is a side surface contacting the opening. The inner surface of the ring member contacts and/or covers part of the side surface of the carrier plate, wherein part or all of the side surfaces of the carrier plate not covered by the ring member are exposed. During the deposition process, a bias voltage can be formed on the bearing surface and the exposed side surface of the susceptor, so that both the bearing surface and the side surface of the susceptor can be used to attract plasma.

In addition, when the ring member of the carrier plate is connected to the cover ring, the shielding portion of the cover ring will shield the ring member and/or the exposed side surface of the carrier plate to avoid depositing a thin film on the exposed side surface of the carrier plate. Specifically, when the cover ring is connected to the ring member, the shielding portion of the cover ring will be higher than or equal to the bearing surface of the carrier plate, and can effectively cover the exposed side of the carrier plate, which can greatly reduce the formation on the exposed side of the carrier plate. Opportunities for thin films. The wafer carrier plate of the present invention can form a bias voltage on the carrier surface and the side surface for a long time, so that the carrier surface and the side surface of the carrier plate can continuously attract plasma, and deposit a uniform film on the surface of the wafer carried by the wafer carrier plate .

An object of the present invention is to provide a wafer carrier plate for generating a stable bias voltage, which mainly includes a carrier plate, a ring member and a cover ring, wherein the carrier plate includes a conductive part and a heating unit. The conductive part and the heating unit are arranged in layers, and the conductive part is closer to the wafer carried by the wafer carrier than the heating unit. The ring-shaped member is connected to the carrier plate, wherein the inner surface of the ring-shaped member only covers the side surface of the heating unit, and does not cover all the side surfaces of the conductive part, so as to facilitate the formation of a bias on the exposed side of the conductive part. When the cover ring contacts the ring-shaped member, the shielding portion of the cover ring will shield the ring-shaped member and the exposed side surface of the conductive portion, so as to avoid forming a thin film on the side surface of the conductive portion and affect the bias formed by the side surface of the conductive portion.

An object of the present invention is to provide a wafer carrier plate for generating a stable bias voltage, which mainly includes a carrier plate, a ring member and a cover ring, wherein the carrier plate includes a conductive part, an insulating and heat conducting unit, and a cover ring. Heating unit. The insulating and heat-conducting unit is located between the heating unit and the conductive part, and is used to electrically isolate the heating unit and the conductive part, so as to prevent the heating unit and the conductive part from being connected to each other and affect the stability of the bias voltage formed on the conductive part.

In addition, the inner surface of the ring-shaped member only covers the side surface of the heating unit and/or the side surface of the insulating and heat-conducting unit, and does not cover all the side surfaces of the conductive part, so as to facilitate the formation of a bias on the exposed side of the conductive part. The shielding portion of the cover ring will shield the ring-shaped member and the exposed side surface of the conductive portion to avoid forming a thin film on the exposed side surface of the conductive portion, thereby affecting the bias formed by the side surface of the conductive portion.

In order to achieve the above objective, the present invention proposes a thin film deposition equipment, which includes: a cavity, including an accommodating space; at least one air inlet, arranged on the cavity, fluidly connected to the accommodating space of the cavity, and used to A process gas is delivered to the accommodating space; at least one carrier plate includes a carrier surface and at least one side surface, the carrier surface is used to carry at least one wafer, and the side surface is located around the carrier surface; a heating unit and a conductive part, It is located in the carrier plate, wherein the conductive part is closer to the carrier surface of the carrier plate, and the heating unit includes at least one heating coil; a ring-shaped member arranged on the carrier plate and located around the wafer, wherein the ring-shaped member includes an outer surface Surface and an inner surface, the inner surface of the ring member covers a side surface of the heating unit, and one side surface of part or all of the conductive part is exposed; at least one stopper is located in the accommodating space of the cavity, and one end of the stopper It has an annular flange; a cover ring arranged on the annular flange of the stopper, wherein the cover ring includes an opening and at least one shielding portion, the shielding portion extends in the radial direction of the opening; and a drive unit for The carrier plate is driven to move relative to the stopper, wherein the drive unit drives the carrier plate to move toward the stopper, so that the cover ring is connected to the ring member, and the shielding part of the cover ring will cover the exposed side surface of the conductive part.

The present invention provides another thin film deposition equipment, including: a cavity, including an accommodating space; at least one air inlet, arranged on the cavity, fluidly connected to the accommodating space of the cavity, and used to deliver a process gas to The accommodating space; at least one carrier plate includes a carrier surface and at least one side surface, the carrier surface is used to carry at least one wafer, and the side surface is located around the carrier surface, and the carrier plate includes an annular recess on the side surface close to the carrier surface Groove; a ring member, arranged in the ring groove of the carrier plate, and located around the wafer, wherein the ring member includes an outer surface and an inner surface, the inner surface of the ring member covers part of the side surface of the carrier plate , And part of the side surface of the carrier plate is not covered by the inner surface of the ring member and is exposed; at least one stopper is located in the accommodating space of the cavity, wherein one end of the stopper has an annular flange; a cover ring, It is arranged on the annular flange of the stopper, wherein the cover ring includes an opening and at least one shielding portion, the shielding portion protrudes in the radial direction of the opening; and a driving unit for driving the carrier plate to move relative to the stopper , Wherein the drive unit drives the carrier plate to move toward the stopper, so that the cover ring is connected to the ring member, and the shielding part of the cover ring will cover the exposed side surface of the carrier plate.

The present model provides a wafer carrier tray for generating a stable bias voltage, comprising: at least one carrier tray, including a carrying surface and at least one side surface, the carrying surface is used to carry at least one wafer, and the side surface is located around the carrying surface ; A heating unit and a conductive part are located in the susceptor, the conductive part is closer to the bearing surface of the susceptor, and the heating unit includes at least one heating coil; a ring member, arranged on the susceptor, and located on the wafer Around, the ring-shaped member includes an outer surface and an inner surface, the inner surface of the ring-shaped member covers a side surface of the heating unit, and one side surface of part or all of the conductive part is exposed; and a cover ring including an opening and at least A shielding portion extends in the radial direction of the opening, wherein when the cover ring is connected to the annular member, the shielding portion of the cover ring will cover the side surface of the carrier plate.

In the wafer carrier and thin film deposition equipment for generating a stable bias voltage, the ring member includes at least one groove located between the inner surface and the outer surface of the ring member, and the groove of the ring member and the inner surface A first convex portion is formed on the surface, a second convex portion is formed on the groove and the outer surface of the ring member, and the height of the first convex portion is lower than that of the second convex portion.

The wafer carrier and thin film deposition equipment for generating a stable bias voltage includes an insulating and thermally conductive part located between the conductive part and the heating unit, and is used to electrically isolate the conductive part and the heating unit.

In the wafer carrier plate and thin film deposition equipment for generating stable bias voltage, when the cover ring is connected to the ring member, the shielding portion of the cover ring is higher than or equal to the bearing surface of the carrier plate.

Please refer to FIG. 1, which is a schematic cross-sectional view of an embodiment of a wafer carrier tray for generating a stable bias voltage of the new type. As shown in the figure, the wafer carrier 10 for generating a stable bias voltage includes at least one carrier 11, an annular member 13 and a cover ring 15. The carrier 11 includes a carrier surface 112 and at least one side surface 114. The carrying surface 112 is used to carry at least one wafer 12, and the side surface 114 is located around the carrying surface 112.

In an embodiment of the present invention, at least one heating unit 111 and one conductive portion 115 can be stacked in the carrier plate 11, wherein the heating unit 111 and the conductive portion 115 can be disk-shaped, and the conductive portion 115 is closer to the carrier plate. 11的Loading surface 112. In addition, when the carrier plate 11 carries the wafer 12, the conductive portion 115 of the carrier plate 11 is closer to the wafer 12 than the heating unit 111.

In an embodiment of the present invention, the heating unit 111 includes at least one heating coil 1111, wherein the heating coil 1111 may be a heating wire. When in use, an electric current can be input to the heating coil 1111, and the wafer carrier 10 can be heated by resistance heating through the heating coil 1111. In another embodiment of the present invention, the heating coil 1111 may be an induction coil, and an alternating current is input to the heating coil 1111, so that the heating coil 1111 generates an induction magnetic field, and heats the wafer carrier 10 and the wafer carried by the induction magnetic field. 12. Heating the wafer carrier 10 through the heating coil 1111 is only an embodiment of the present invention, and is not a limitation of the scope of the present invention.

The conductive portion 115 is electrically connected to a bias power supply 175, and a bias voltage is formed on the conductive portion 115 through the bias power supply 175 to attract the plasma on the wafer carrier 10 and the wafer 12, and deposit on the surface of the wafer 12 film. The bias power source 175 may be an AC power source or a DC power source, and is used to form an AC bias voltage or a DC bias voltage on the conductive part 115.

The ring member 13 is disposed on the carrier plate 11 and located around the carrying surface 112 of the carrier plate 11 and/or the wafer 12. For example, an annular groove may be provided on the side surface 114 of the carrying plate 11 close to the carrying surface 112, and the annular member 13 may be arranged in the annular groove. In an implementation of the present invention, the area of the wafer 12 can be slightly larger than the carrying surface 112 of the carrier tray 11, so that the side of the wafer 12 placed on the carrying surface 112 will protrude from the carrying surface 112 of the carrier tray 11 and cover part of it. Ring member 13.

As shown in FIGS. 2 and 3, the ring member 13 may include an opening, an inner surface 132 and an outer surface 134, wherein the inner surface 132 is a side surface of the ring member 13 connected to the opening. The ring member 13 can be sleeved on the carrier plate 11, wherein the inner surface 132 of the ring member 13 will contact and cover part of the side surface 114 of the carrier plate 11, and other carrier plates that are not covered by the inner surface 132 of the ring member 13 The side 114 of 11 is bare. Specifically, the height of the inner surface 132 of the ring member 13 is lower than the height of the outer surface 134.

In an embodiment of the present invention, a groove 136 may be provided on the upper surface of the ring member 13 between the inner surface 132 and the outer surface 134. A first protrusion 131 is formed between the groove 136 of the ring member 13 and the inner surface 132, and a second protrusion 133 is formed between the groove 136 and the outer surface 134, and the height of the second protrusion 133 is higher than The first protrusion 131. The ring member 13 having the groove 136 is only an embodiment of the present invention, and is not a limitation of the scope of the present invention. Specifically, the present invention mainly makes the inner surface 132 and/or the first convex portion 131 of the ring member 13 not completely cover the side surface 114 of the carrier plate 11, and the ring member 13 does not necessarily need to be provided with the groove 136.

In an embodiment of the present invention, the conductive portion 115 of the carrier plate 11 is closer to the wafer 12 than the heating unit 111, and the inner surface 132 and/or the first protrusion 131 of the ring member 13 covers the heating unit 111 of the carrier plate 11 Part or all of the sides. In addition, the inner surface 132 and/or the first protrusion 131 of the ring member 13 does not cover the side surface 114 of the conductive portion 115, or only covers a part of the side surface of the conductive portion 115, so that part or all of the side surface 114 of the conductive portion 115 is exposed.

When the annular member 13 does not completely cover the side 114 of the carrier 11 and/or the conductive portion 115, a thin film may be formed on the exposed side 114 of the carrier 11 and/or the conductive portion 115 during the deposition process. When the exposed side 114 of the carrier plate 11 and/or the conductive part 115 is formed with a certain thickness of film or is completely covered by the film, it may cause the carrier plate 11 and/or the side 114 of the conductive part 115 to be unable to continue to be stable or sufficiently large. The bias voltage will affect the uniformity of the film deposited on the surface of the wafer 12. For example, the film thickness in the peripheral area of the wafer 12 will be thinner than the central area, resulting in uneven thickness of the film deposited on the surface of the wafer 12.

Conversely, if the inner surface 132 and/or the first convex portion 131 of the ring member 13 completely cover the side surface 114 of the susceptor 11 or the conductive portion 115, it can prevent the formation of the side surface 114 of the susceptor 11 and/or the conductive portion 115. film. However, when the carrier plate 11 and/or the side 114 of the conductive part 115 are covered by the ring member 13, the bias power supply 175 may not be able to form a bias on the carrier plate 11 and the side 114 of the conductive part 115, or cause the carrier plate 11 to be biased. And the side surface of the conductive portion 115 cannot attract plasma, which is also not conducive to forming a uniform thin film on the surface of the wafer 12.

In order to solve the above-mentioned problems, the inner surface 132 of the ring member 13 proposed in the present invention does not completely cover the side 114 of the carrier 11 and/or the conductive portion 115, so that the side 114 of the carrier 11 and/or the conductive portion 115 exists Bare areas. The bias power supply 175 can form a bias voltage on the carrying surface 112 and the side 114 of the susceptor 11 and/or the conductive portion 115, and attract the plasma through the carrying surface 112 and the side 114 of the susceptor 11 to deposit the plasma on the surface of the wafer 12 A uniform film is formed. In addition, the present invention also proposes to shield the side 114 of the carrier plate 11 and/or the conductive part 115 through the cover ring 15 to prevent the formation of a thin film on the exposed side 114 of the carrier plate 11 and/or the conductive part 115, so that the bias power supply 175 can be loaded The bearing surface 112 and the side surface 114 of the disk 11 continuously form a bias voltage.

Specifically, the cover ring 15 of the present invention includes an opening and at least one shielding portion 151, wherein the shielding portion 151 protrudes or extends in the radial direction of the opening. When the ring member 13 is connected to the cover ring 15, the shielding portion 151 of the cover ring 15 will be higher than or equal to the bearing surface 112 of the bearing plate 11, and cover the ring member 13 and/or the exposed side surface 114 of the bearing plate 11 to reduce The distance between the carrying surface 112 of the small carrier plate 11 and/or the wafer 12 and the shielding portion 151 of the cover ring 15 avoids the formation of a thin film on the side surface 114 of the carrier plate 11.

In another embodiment of the present invention, as shown in FIG. 4, the carrier plate 11 includes a stack of a heating unit 111, a conductive portion 115, and an insulating and thermally conductive portion 113, wherein the insulating and thermally conductive portion 113 is located between the heating unit 111 and the conductive portion 115 , And used to electrically isolate the heating unit 111 and the conductive portion 115 to prevent the heating unit 111 and the conductive portion 115 from being connected to each other and affecting the stability of the bias voltage on the conductive portion 115. The insulating heat-conducting unit 113 literally means a material with heat-conducting and insulating properties, such as alumina.

The inner surface 132 and/or the first protrusion 131 of the ring member 13 are mainly used to cover the side surface of the heating unit 111 to avoid the formation of a thin film on the side surface 114 of the heating unit 111 during the deposition process. In an embodiment of the present invention, the inner surface 132 and/or the first convex portion 131 of the ring member 13 can cover part or all of the side surfaces 114 of the insulating and thermally conductive portion 113, and can also cover part of the side surfaces 114 of the conductive portion 115, so that The conductive portion 115 has an exposed side surface 114 that is not covered by the inner surface 132 of the ring member 13 and/or the first convex portion 131. Specifically, the inner surface 132 and/or the first convex portion 131 of the annular member 13 of the embodiment of the present invention only need to cover the side surface 114 of the heating unit 111, and not necessarily cover the side surface 114 of the insulating and thermally conductive portion 113 or the conductive portion. Part of the side 114 of 115.

In an embodiment of the present invention, the wafer carrier 10 can be connected to a supporting member 17, wherein at least one first conductive unit 171 is disposed in the supporting member 17. The first conductive unit 171 is electrically connected to the conductive portion 115 and the bias power supply 175, and can transmit the AC or DC bias provided by the bias power supply 175 to the conductive portion 115.

In addition, at least one second conductive unit 173 can also be provided in the support 17, wherein the second conductive unit 173 is electrically connected to the heating unit 111, for example, connected to the heating coil 1111 of the heating unit 111. In practical applications, an alternating current can be transmitted to the heating coil 1111 via the second conductive unit 173 to increase the temperature of the heating unit 111. In addition, the wafer carrier 10 includes at least one temperature sensing unit 177 for measuring the temperature of the heating unit 111, the conductive portion 115 and/or the wafer carrier 10. The first conductive unit 171 and the second conductive unit 173 may be conductive wires or conductive sheets.

In an embodiment of the present invention, the wafer carrier tray 10 may include at least one connecting seat 161 and a fixing seat 163. The connecting seat 161 is used to connect the heating unit 111, and the fixing seat 163 is used to carry and fix the connecting seat 161. .

Specifically, the connecting seat 161 may include a plurality of annular connecting members, such as a first annular connecting member 1611, a second annular connecting member 1613, and a third annular connecting member 1615, wherein the supporting member 17 is located in the first annular connecting member. In the opening of the connecting piece 1611, the first annular connecting piece 1611 is located in the opening of the second annular connecting piece 1613, and the second annular connecting piece 1613 is located in the opening of the third annular connecting piece 1615. In other words, the connecting seat 161 can be formed through the combination of the first annular connecting member 1611, the second annular connecting member 1613, and the third annular connecting member 1615. Of course, the connecting seat 161 including three connecting pieces 1611/1613/1615 is only an embodiment of the present invention, and is not a limitation of the scope of the present invention.

In an embodiment of the present invention, the edge of the connecting seat 161 has an annular protrusion 1617, wherein the radially inner area of the annular protrusion 1617 can form a groove, and the heating unit 111 can be placed in the groove of the connecting seat 161 The annular protrusion 1617 is located around the heating unit 111.

The fixing seat 163 can be a single component, and the edge of the fixing seat 163 has an annular protrusion 1631, wherein the annular protrusion 1631 of the fixing seat 163 can form a groove in the radial direction, and the connecting seat 161 can be arranged In the groove of the fixing seat 163, the annular protrusion 1631 of the fixing seat 163 is located around the connecting seat 161.

In an embodiment of the present invention, the upper surface and the lower surface of the first annular connecting member 1611 closest to the inner ring of the connecting seat 161 may be respectively provided with a first annular sealing member 1612 and a second annular sealing member 1614, for example An O-ring, wherein the first ring seal 1612 on the upper surface of the first ring connector 1611 contacts the heating unit 111, and the second ring seal 1614 on the lower surface of the first ring connector 1611 contacts the fixing seat 163. In practical applications, the heating unit 111 and the fixing seat 163 are closely attached to the connecting seat 161 and/or the first annular connecting member 1611 due to the pressure difference in each area.

The first annular sealing member 1612 on the upper surface of the first annular connecting member 1611 is closer to or directly in contact with the heating unit 111. After a period of use, the first annular sealing member 1612 may be deteriorated. To avoid deterioration of the first annular seal 1612, at least one cooling channel 1113 may be further provided above the first annular seal 1612, and the heating unit 111 and the first annular seal 1612 can be isolated through the cooling channel 1113 to cool the first annular seal 1612. A ring seal 1612.

Please refer to FIG. 5, which is a schematic cross-sectional view of an embodiment of a new thin film deposition apparatus using a wafer carrier tray. As shown in the figure, the thin film deposition equipment 20 mainly includes at least one wafer carrier plate 10 and a cavity 21, wherein the cavity 21 includes an accommodating space 26, and the wafer carrier plate 10 is located in the accommodating space 26 and used To carry at least one wafer 12. The structure of the wafer carrier 10 is shown in FIGS. 1 to 4, and the description will not be repeated in this embodiment.

In an embodiment of the present invention, the thin film deposition equipment 20 may be a physical vapor deposition device, and a target 24 is disposed in the cavity 21, wherein the target 24 faces the wafer carrier 10 and/or the wafer 12. In an embodiment of the present invention, the cavity 21 may include a top plate 213 and a lower cavity 215, wherein the top plate 213 is connected to the lower cavity 215 through an insulating portion 217 to form an accommodating space 26 therebetween, and the target The material 24 is disposed on the top plate 213 and faces the wafer carrier 10 and/or the wafer 12.

The cavity 21 is provided with at least one air inlet 211, wherein the air inlet 211 is fluidly connected to the accommodating space 26 of the cavity 21, and is used to deliver a process gas to the accommodating space 26 for the deposition process. For example, the process gas can be It is an inert gas or a reactive gas. In addition, an air extraction port may be provided on the cavity 21, and the gas in the cavity 21 can be extracted through the air extraction port through the pump.

The ring member 13 is provided on the carrier plate 11 and located around the wafer 12. The stopper 27 is disposed in the accommodating space 26 of the cavity 21 and located in the surrounding area of the wafer carrier tray 10. Specifically, one end of the stopper 27 is connected to the cavity 21, and the other end forms an opening. In an embodiment of the present invention, an annular flange 271 can be formed at one end of the stopper 27 that is not connected to the cavity 21, wherein the annular flange 271 is located around the opening of the stopper 27, and the cover ring 15 can be arranged on the stopper 27. The annular flange 271 is on.

The cavity 21 may include an inlet and outlet 212 for conveying the wafer 12. The driving unit 28 can be connected to the support 17 and drive the wafer carrier 10 away from the stop 27 through the support 17, as shown in FIG. 5. Then, the wafer 12 can be placed on the wafer carrier 10 through the inlet and outlet 212 through the robot arm, and the wafer 12 carried by the wafer carrier 10 can be taken out of the cavity 21 by the robot through the inlet and outlet 212.

After the robot arm places the wafer 12 on the wafer carrier 10, the driving unit 28 can drive the wafer carrier 10 and the carried wafer 12 to move toward the stop 27 through the support 17, so that the wafer carrier 10 The upper ring member 13 contacts the cover ring 15 on the stopper 27, and the stopper 27 and the cover ring 15 are arranged around the wafer 12, wherein the stopper 27, the cover ring 15, the wafer carrier plate 10, the wafer The circle 12 and/or the ring member 13 divide the accommodating space 26 of the cavity 21 into two parts, as shown in FIG. 6.

During the deposition process, the heating unit 111 of the wafer carrier 10 will heat the wafer 12, and will apply a bias voltage to the top plate 213 and the conductive portion 115 of the wafer carrier 10 respectively, wherein the wafer carrier 10 and/or The side surface 114 of the conductive portion 115 is not covered by the ring member 13, so that the wafer carrier 10 and/or the supporting surface 112 and the side surface 114 of the conductive portion 115 will also form a bias. In addition, the exposed side 114 of the wafer carrier 10 and/or the conductive portion 115 is blocked by the shielding portion 151 of the cover ring 15. For example, the shielding portion 151 of the cover ring 15 can isolate the target 24 and the wafer carrier 10 and/or conduct electricity. The exposed side 114 of the part 115 prevents the deposition of thin films on the side 114 of the wafer carrier 10 and/or the conductive part 115, so that the carrier surface 112 and the side 114 of the wafer carrier 10 and/or the conductive part 115 can continue to be biased. Pressure.

The inert gas forms an ionized inert gas due to the action of the high-voltage electric field. The ionized inert gas will be attracted by the bias voltage on the target 24 and bombard the target 24. The target atoms or molecules splashed from the target 24 will be attracted by the bias on the wafer carrier 10 and deposited on the wafer. 12 surface.

In an embodiment of the present invention, as shown in FIGS. 2 and 3, the ring member 13 includes at least a pair of positioning portions 138, wherein the positioning portion 138 is located outside the ring member 13. The cover ring 15 includes at least a pair of protruding parts 153, wherein the positioning protruding part 153 is located outside the shielding part 151. When the drive unit 28 carries the disk 11 close to the stopper 27, the alignment protrusion 153 of the cover ring 15 will contact the alignment portion 138 of the ring member 13 and complete the alignment between the cover ring 15 and the ring member 13 .

In the embodiment of the present invention, the physical vapor deposition apparatus is taken as a novel embodiment, but the physical vapor deposition apparatus is not limited by the scope of the rights of the present invention. In practical applications, the wafer carrier plate 10 of the present invention can also be applied In a chemical vapor deposition apparatus or an atomic layer deposition apparatus, basically as long as the wafer carrier 10 of the thin film deposition equipment needs to be heated and generates a bias voltage, the wafer carrier 10 of the present invention is applicable.

The above is only one of the preferred embodiments of the present invention, and is not intended to limit the scope of implementation of the present invention, that is, all the equivalent changes and changes in the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention Modifications should be included in the scope of the patent application for this new model.

10: Wafer carrier tray 11: Carrier plate 111: heating unit 1111: heating coil 1113: cooling channel 112: bearing surface 113: Insulation and heat conduction part 114: side 115: conductive part 12: Wafer 13: Ring member 131: The first convex part 132: inner surface 133: second convex 134: Outer Surface 136: Groove 138: Counterpoint 15: cover ring 151: Shading part 153: Alignment protrusion 161: Connecting Block 1611: The first ring connector 1612: first ring seal 1613: second ring connector 1614: second ring seal 1615: third ring connector 1617: ring bump 163: fixed seat 1631: Ring bump 17: Support 171: The first conductive unit 173: second conductive unit 175: Bias power supply 177: temperature sensing unit 20: Thin film deposition equipment 21: Cavity 211: Air Inlet 212: Inlet and Outlet 213: top plate 215: lower cavity 217: Insulation 24: target 26: accommodating space 27: stop 271: Ring flange 28: drive unit

[Figure 1] is a schematic cross-sectional view of an embodiment of a wafer carrier plate for generating a stable bias voltage.

[Fig. 2] and [Fig. 3] are enlarged schematic diagrams of an embodiment of a new wafer carrier tray for generating stable bias voltage.

[Fig. 4] is a schematic cross-sectional view of another embodiment of the wafer carrier tray for generating stable bias voltage.

[Fig. 5] and [Fig. 6] are schematic cross-sectional views of an embodiment of a new thin film deposition apparatus using a wafer carrier plate.

10: Wafer carrier tray

11: Carrier plate

111: heating unit

1111: heating coil

1113: cooling channel

112: bearing surface

114: side

115: conductive part

12: Wafer

13: Ring member

15: cover ring

151: Shading part

161: Connecting Block

1611: The first ring connector

1612: first ring seal

1613: second ring connector

1614: second ring seal

1615: third ring connector

1617: ring bump

163: fixed seat

1631: Ring bump

17: Support

171: The first conductive unit

173: second conductive unit

175: Bias power supply

177: temperature sensing unit

Claims (10)

A thin film deposition equipment, including: A cavity, including an accommodating space; At least one air inlet provided on the cavity, fluidly connected to the accommodating space of the cavity, and used to deliver a process gas to the accommodating space; At least one carrier plate includes a carrier surface and at least one side surface, the carrier surface is used to carry at least one wafer, and the side surface is located around the carrier surface; A heating unit and a conductive part located in the carrying plate, wherein the conductive part is closer to the carrying surface of the carrying plate, and the heating unit includes at least one heating coil; A ring member arranged on the carrier plate and located around the wafer, wherein the ring member includes an outer surface and an inner surface, and the inner surface of the ring member covers a side surface of the heating unit, And part or all of one side of the conductive part is exposed; At least one stopper located in the accommodating space of the cavity, wherein one end of the stopper has an annular flange; A cover ring arranged on the annular flange of the blocking member, wherein the cover ring includes an opening and at least one shielding portion, the shielding portion extending in a radially inward direction of the opening; and A drive unit for driving the carrier plate to move relative to the stopper, wherein the drive unit drives the carrier plate to move toward the stopper, so that the cover ring is connected to the ring member, and the shielding portion of the cover ring will block The exposed side of the conductive part. The thin film deposition apparatus according to claim 1, wherein the ring member includes at least one groove located between the inner surface and the outer surface of the ring member, and the groove and the inner surface of the ring member A first convex portion is formed, the groove and the outer surface of the ring-shaped member form a second convex portion, and the height of the first convex portion is lower than the second convex portion. The thin film deposition apparatus according to claim 1, wherein when the cover ring is connected to the ring member, the shielding portion of the cover ring is higher than or equal to the bearing surface of the susceptor. The thin film deposition apparatus according to claim 1, including an insulating and thermally conductive part located between the conductive part and the heating unit, and used for electrically isolating the conductive part and the heating unit. A thin film deposition equipment, including: A cavity, including an accommodating space; At least one air inlet provided on the cavity, fluidly connected to the accommodating space of the cavity, and used to deliver a process gas to the accommodating space; At least one carrier plate includes a carrier surface and at least one side surface, the carrier surface is used to carry at least one wafer, the side surface is located around the carrier surface, and the side surface of the carrier disk close to the carrier surface includes a ring形槽; An annular member is arranged in the annular groove of the carrier plate and located around the wafer, wherein the annular member includes an outer surface and an inner surface, and the inner surface of the annular member covers the carrier Part of the side surface of the tray, and part of the side surface of the carrier tray is not covered by the inner surface of the ring member and is exposed; At least one stopper located in the accommodating space of the cavity, wherein one end of the stopper has an annular flange; A cover ring arranged on the annular flange of the blocking member, wherein the cover ring includes an opening and at least one shielding portion, and the shielding portion protrudes in a direction radially inward of the opening; and A drive unit for driving the carrier plate to move relative to the stopper, wherein the drive unit drives the carrier plate to move toward the stopper, so that the cover ring is connected to the ring member, and the shielding portion of the cover ring will block The exposed side of the bearing plate. The thin film deposition apparatus according to claim 5, wherein when the cover ring is connected to the ring member, the shielding portion of the cover ring is higher than or equal to the bearing surface of the susceptor. A wafer carrier plate for generating a stable bias voltage, comprising: At least one carrier plate includes a carrier surface and at least one side surface, the carrier surface is used to carry at least one wafer, and the side surface is located around the carrier surface; A heating unit and a conductive part located in the carrying plate, wherein the conductive part is closer to the carrying surface of the carrying plate, and the heating unit includes at least one heating coil; A ring member arranged on the carrier plate and located around the wafer, wherein the ring member includes an outer surface and an inner surface, and the inner surface of the ring member covers a side surface of the heating unit, And part or all of the conductive part is exposed on one side; and A cover ring includes an opening and at least one shielding portion, the shielding portion extends in a radial direction of the opening, wherein when the cover ring is connected to the annular member, the shielding portion of the cover ring will shield the carrier plate的 That side. The wafer carrier for generating a stable bias according to claim 7, wherein the ring member includes at least one groove located between the inner surface and the outer surface of the ring member, the ring member The groove and the inner surface of the ring form a first convex portion, the groove and the outer surface of the ring member form a second convex portion, and the height of the first convex portion is lower than the second convex portion . The wafer carrier for generating a stable bias according to claim 7, wherein when the cover ring is connected to the ring member, the shielding portion of the cover ring is higher than or equal to the bearing surface of the carrier. The wafer carrier plate for generating a stable bias voltage according to claim 7 includes an insulating and thermally conductive portion located between the conductive portion and the heating unit, and is used to electrically isolate the conductive portion and the heating unit.

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