TWI748774B - Wafer support and thin film deposition apparatus using the same - Google Patents

Abstract

The invention is a wafer support, which includes a heating unit, an insulating and heat conducting unit and a conductive part, wherein the insulating and heat conducting unit is located between the conductive part and the heating unit. During deposition, an AC bias can be formed on the conductive part to attract the plasma above the conductive part. The heating unit includes at least one heating coil to heats the wafer carried by the wafer support via the insulating heat conduction unit and the conductive part. The insulating and heat conduction unit electrically isolates the heating unit and the conductive part to prevent the alternating current on the heating coil and the alternating bias voltage of the conductive part from conducting each other, so that the wafer support can generate a stable AC bias and temperature to facilitate forming a uniform film on the wafer carried by the wafer support.

Description

Wafer carrier plate and thin film deposition device using wafer carrier plate

The present invention relates to a wafer carrier plate, in particular to a thin film deposition device using the wafer carrier plate, which mainly electrically isolates a heating unit and a conductive part through an insulating heat-conducting unit, so as to avoid the current of the heating coil and the conductive part. The pressure is connected to each other, and it is beneficial to form a uniform thin film on the surface of the wafer carried by the wafer carrier. .

Chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) are all commonly used thin film deposition equipment, and are commonly used in integrated circuits, light-emitting diodes, and display manufacturing processes.

The deposition equipment mainly includes a cavity and a wafer carrier. The wafer carrier is located in the cavity and used to carry at least one wafer. Taking physical vapor deposition as an example, a target material needs to be set in the cavity, where the target material faces the wafer on the wafer carrier tray. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the cavity, and a bias voltage is applied to the target and the wafer carrier respectively, wherein the wafer carrier also heats the wafers carried. The inert gas in the cavity will form ionized inert gas due to the action of the high-voltage electric field. The ionized inert gas will be attracted by the bias on the target material and bombard the target material. The target atoms or molecules sputtered from the target are attracted by the bias voltage on the wafer carrier and are deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.

In addition, during chemical vapor deposition and atomic layer deposition, it may also be necessary to heat the wafer carrier and provide a bias voltage to the wafer carrier to facilitate the formation of a thin film of uniform thickness on the surface of the wafer carried by the wafer carrier.

As described in the prior art, during the deposition process, it is often necessary to provide an AC bias to the wafer carrier and heat the wafer carrier through a heating coil to improve the uniformity of the film deposited on the wafer surface. However, the AC current on the heating coil may be connected to the AC bias on the wafer carrier, causing the AC bias on the wafer carrier to become unstable, which in turn causes the thickness of the film deposited on the wafer surface to vary. Evenly. In order to avoid the above situation, the present invention proposes a novel wafer carrier, which mainly electrically isolates the heating coil and the conductive part on the wafer carrier through an insulating and thermally conductive unit, so as to prevent the alternating current on the heating coil from interfering with the conductive part. The AC bias on the wafer carrier can form a stable AC bias to improve the uniformity of the film formed on the wafer surface.

An object of the present invention is to provide a wafer carrier plate, which mainly includes a heating unit, an insulating and thermally conductive unit and a conductive part, wherein the insulating and conductive part is located between the heating unit and the conductive part, and electrically isolates the heating unit and the conductive part. Department. The arrangement of the insulated conductive part can prevent the alternating current on the heating coil of the heating unit and the alternating bias voltage on the conductive part from being conducted to each other to form interference, so as to facilitate the formation of a stable alternating current bias on the conductive part. In addition, the heating unit can still transfer heat to the conductive part via the insulated conductive part, and heat the wafer carried by the wafer carrier.

An object of the present invention is to provide a wafer carrier plate, which mainly includes a heating unit, an insulating and thermally conductive unit, a conductive part, a connecting seat, and a fixing seat, wherein the insulating and thermally conductive unit It is located between the heating unit and the conductive part, and the fixing seat is connected to the heating unit through the connecting seat. The connecting seat includes a plurality of annular connecting pieces with different radii. The upper and lower surfaces of the annular connecting piece closest to the inner side are respectively provided with an O-ring, so that the upper and lower surfaces of the annular connecting piece are respectively connected to the heating unit and the fixing seat through the O-rings.

In addition, a cooling channel can be further provided between the O-ring of the annular connector and the adjacent heating unit and/or heating coil to reduce the temperature of the O-ring closer to the heating unit and prevent the O-ring from becoming too long. Time is degraded in a high temperature environment.

An object of the present invention is to provide a wafer carrier, wherein the heating unit of the wafer carrier includes a plurality of heating coils, and each heating coil is used to heat different areas of the wafer carrier. In addition, during the heating process, the current delivered to each heating coil can be separately controlled to adjust the temperature of different regions of the wafer carrier in different regions, so that the surface of the wafer carrier on the wafer carrier can generate a uniform temperature.

In addition, at least one temperature sensing unit can be provided in different areas of the wafer carrier, and different temperature sensing units can be used to measure the temperature of different areas on the wafer carrier. By using multiple heating coils to heat in areas and cooperating with multiple temperature sensing units to measure the temperature, the temperature of each area of the wafer carrier can be adjusted in real time and accurately.

In order to achieve the above objective, the present invention provides a wafer carrier tray for carrying at least one wafer, including: at least one heating unit, including at least one heating coil, for heating the wafers carried by the wafer carrier tray; and an insulation The heat conduction unit is arranged on the heating unit; and a conductive part is arranged on the insulating heat conduction unit and is electrically connected to a bias power supply, wherein the insulating heat conduction unit is located between the heating unit and the conductive part, and electrically isolates the heating unit and Conductive part.

The present invention provides another thin film deposition apparatus, including: a cavity including an accommodating space; a wafer carrier tray located in the accommodating space and used to carry at least one wafer, including: at least one heating unit, including at least A heating coil for heating the wafer carried by the wafer carrier; a conductive part located above the heating unit and electrically connected to a bias power source, wherein the bias power source is used to form a bias voltage on the conductive part; and An insulating and heat-conducting unit, located between the heating unit and the conductive part, and used to isolate the heating unit and the conductive part; and at least one air inlet, fluidly connected to the accommodating space of the cavity, and used to deliver a process gas to the accommodating space .

In the wafer carrier plate, the heating coil includes a first heating coil and a second heating coil, and the second heating coil is located at the periphery of the first heating coil.

The wafer carrier plate includes a plurality of temperature sensing units, and the first heating coil and the second heating coil are respectively used to heat a first area and a second area of the wafer carrier plate, and through temperature sensing The unit measures the temperature of the first area and the second area of the wafer carrier respectively.

The wafer carrier plate and the thin film deposition device include a support member connected to the wafer carrier plate, at least one first conductive unit is provided in the support member, and is electrically connected to a bias power supply and a conductive part. The bias power supply passes through the first conductive unit The cell forms a bias voltage on the conductive part.

In the wafer carrier plate, the bias power source is an AC power source, and an AC bias voltage is formed on the conductive part via the conductive unit.

The wafer carrier plate includes at least one second conductive unit located in the support and electrically connected to the heating coil.

The thin film deposition device includes at least one second conductive unit located in the supporting member and electrically connected to the heating coil, and the heating coil includes a first heating coil and a second heating coil, and the second heating coil is located in the first heating coil The periphery.

The thin film deposition device includes a driving unit connected to the support, and the wafer carrier is driven to move by the support.

10: Wafer carrier tray

11: Heating unit

115: cooling channel

12: Wafer

13: Insulation and heat conduction unit

14: heating coil

141: The first heating coil

143: The second heating coil

15: Conductive part

161: Connecting Block

1611: The first ring connector

1612: first ring seal

1613: second ring connector

1614: second ring seal

1615: Third ring connector

1617: Ring bump

163: fixed seat

1631: Ring bump

17: Support

171: The first conductive unit

173: second conductive unit

175: Bias power supply

177: The first temperature sensing unit

179: The second temperature sensing unit

20: Thin film deposition equipment

21: Cavity

211: Air Inlet

212: inlet and outlet

213: top plate

215: lower cavity

217: Insulation

24: Target

25: Ring member

26: accommodating space

261: Reaction Space

27: stop

271: Ring flange

28: drive unit

29: cover ring

A1: The first area

A2: The second area

[Figure 1] is a schematic cross-sectional view of an embodiment of the wafer carrier of the present invention.

[FIG. 2] and [FIG. 3] are schematic cross-sectional views of an embodiment of a thin film deposition apparatus using a wafer carrier according to the present invention.

Please refer to FIG. 1, which is a schematic cross-sectional view of an embodiment of a wafer carrier of the present invention. As shown in the figure, the wafer carrier 10 is used to carry at least one wafer 12, and mainly includes at least one heating unit 11, an insulating and thermally conductive unit 13, and a conductive portion 15, wherein the heating unit 11, the insulating and thermally conductive unit 13 and the conductive portion 15 may be disc-shaped.

The heating unit 11, the insulating and heat-conducting unit 13 and the conductive portion 15 are stacked and arranged, wherein the conductive portion 15 is closest to the wafer 12 carried by the wafer carrier 10, and the heating unit 11 is the farthest from the wafer 12. The insulating and heat-conducting unit 13 is located between the heating unit 11 and the conductive portion 15, and is used to electrically isolate the heating unit 11 and the conductive portion 15.

The heating unit 11 includes at least one heating coil 14. When in use, an alternating current can be input to the heating coil 14 so that the heating coil 14 generates an induction magnetic field and heats the wafer carrier 10 through the induction magnetic field. In an embodiment of the present invention, the wafer carrier 10, the heating unit 11, or the conductive portion 15 may be provided with a conductive layer (not shown). For example, the conductive layer may be a metal layer and is adjacent to the heating coil 14, wherein the heating coil 14 The induced magnetic field will form an eddy current on the conductive layer, and the eddy current will The resistance of the conductive layer causes the conductive layer and/or the heating unit 11 to generate heat to heat the wafer 12 carried by the wafer carrier 10.

The insulating and heat-conducting unit 13 is located on the heating unit 11, and the conductive part 15 is arranged on the insulating and heat-conducting unit 13, wherein the conductive part 15 is closest to or directly contacts the wafer 12 carried by the wafer carrier 10. In practical applications, the conductive portion 15 can be electrically connected to a bias power source 175, and a bias voltage is formed on the conductive portion 15 through the bias power source 175. The bias power source 175 may be an AC power source or a DC power source, and is used to form an AC bias voltage or a DC bias voltage on the conductive part 15.

The bias on the conductive portion 15 is used to attract the plasma on the wafer carrier 10 and the wafer 12 to deposit a thin film on the surface of the wafer 12. Specifically, the conductive portion 15 may be metal and used to carry at least one wafer 12, for example, the conductive portion 15 may be a titanium disk.

The insulating and heat-conducting unit 13 is disposed on the heating unit 11 and located between the heating unit 11 and the conductive portion 15. The insulating and heat-conducting unit 13 literally means a material with heat conduction and insulation properties, such as alumina.

When the insulated conductive part 13 is not provided, the alternating current on the heating coil 14 may be transmitted to the conductive part 15, which in turn affects the magnitude of the bias voltage on the conductive part 15, so that the bias power supply 175 cannot be stabilized on the conductive part 15. AC bias or DC bias. As a result, the conductive portion 15 cannot stably attract the plasma above the wafer 12, and it is not conducive to forming a thin film with a uniform thickness on the surface of the wafer 12.

In order to solve the above-mentioned problems, the present invention proposes to provide an insulating and heat-conducting unit 13 between the heating unit 11 and the conductive part 15, and the heating unit 11 and the conductive part 15 can be electrically isolated through the installation of the insulating and heat-conducting unit 13. The alternating current on the heating coil 14 of the heating unit 11 cannot pass through the insulating and heat-conducting unit 13, nor is it transmitted to the conductive part 15, so that the bias power supply 175 can be formed on the conductive part 15. The stable DC bias or AC bias can stably attract the plasma above the wafer 12, which is beneficial to form a thin film with uniform thickness on the surface of the wafer 12.

In an implementation of the present invention, when the bias power supply 175 provides a bias voltage of 70V to the conductive portion 15, if the heating coil 14 fails to isolate the interference of the conductive portion 15, it may cause the bias power supply 175 to fail to connect to the conductive portion 15. A bias voltage of 70V is formed on the upper side. Even if the bias power supply 175 can form a sufficient bias voltage on the conductive portion 15, the bias voltage of the conductive portion 15 may fluctuate in the interval of 20V, making the bias voltage on the conductive portion 15 unstable. Conversely, if the insulating and heat-conducting unit 13 is provided between the conductive portion 15 and the heating unit 11, the bias power supply 175 can form a bias voltage of 70V on the conductive portion 15, and the fluctuation interval of the bias voltage on the conductive portion 15 can be less than 10V. The conductive portion 15 has a stable bias voltage.

Specifically, the insulating and heat-conducting unit 13 can also prevent the DC or AC bias on the conductive portion 15 from affecting the AC current of the heating coil 14, so that the heating coil 14 can stably control the wafer carrier 10 and the carried wafer 12 Temperature to help improve the quality of film deposition.

The insulating and heat-conducting unit 13 has the characteristics of heat conduction, so that the heat generated by the heating unit 11 can be conducted to the conductive part 15 through the insulating and heat-conducting unit 13, and the temperature of the wafer 12 carried by the wafer pallet 10 is increased through the highly conductive part 15.

The wafer carrier 10 can be connected to a support 17, and the wafer carrier 10 is connected through the support 17. In an embodiment of the present invention, at least one first conductive unit 171 may be disposed in the support 17, wherein the first conductive unit 171 is electrically connected to the conductive portion 15 and the bias power supply 175, and can provide the bias power supply 175 The AC bias or the DC bias is transmitted to the conductive part 15.

In addition, at least one second conductive unit 173 can also be provided in the support 17, wherein the second conductive unit 173 is electrically connected to the heating coil 14. In practical applications, an alternating current can be transmitted to the heating coil 14 via the second conductive unit 173 to increase the temperature of the heating unit 11.

In an embodiment of the present invention, the heating coil 14 of the heating unit 11 includes a first heating coil 141 and a second heating coil 143, wherein the second heating coil 143 is located outside the first heating coil 141. In addition, the first heating coil 141 and the second heating coil 143 can be connected to different second conductive units 173, and can provide alternating currents of different sizes and/or frequencies to the first heating coil 141 and the second heating coil 143, respectively, to partition Adjust the temperature of the heating unit 11.

Specifically, the first heating coil 141 and the second heating coil 143 can be used to heat and/or adjust the heating unit 11, the conductive portion 15 and/or a first area A1 and a second area A2 of the wafer carrier 10, respectively For example, the first area A1 is located at the inner ring of the heating unit 11, the conductive portion 15 and/or the wafer carrier plate 10 or close to the center, while the second area A2 is located at the heating unit 11, the conductive portion 15 and/or the crystal The outer ring of the round bearing plate 10.

The wafer carrier 10 includes a plurality of temperature sensing units 177/179, for example, at least one first temperature sensing unit 177 and at least one second temperature sensing unit 179 are used to measure the heating unit 11, the conductive portion 15, and/or The temperature of the first area A1 and the second area A2 of the wafer susceptor 10.

The first temperature sensing unit 177 and the second temperature sensing unit 179 measure the temperature of different areas of the heating unit 11, the conductive portion 15 and/or the wafer carrier 10, respectively, and provide the matching changes to the first heating coil 141 and The current of the second heating coil 143 can adjust the temperature of different areas of the heating unit 11, the conductive portion 15 and/or the wafer carrier 10 so that each of the heating unit 11, the conductive portion 15 and/or the wafer carrier 10 The area can produce the same or similar temperature.

In an embodiment of the present invention, the wafer carrier 10 may include at least one connecting seat 161 and a fixing seat 163. The connecting seat 161 is used to connect the heating unit 11, and the fixing seat 163 is used to carry and fix the connecting seat 161. .

Specifically, the connecting seat 161 may include a plurality of annular connecting members, such as a first annular connecting member 1611, a second annular connecting member 1613, and a third annular connecting member 1615, wherein the supporting member 17 is located in the first annular connecting member. In the opening of the connecting piece 1611, the first annular connecting piece 1611 is located in the opening of the second annular connecting piece 1613, and the second annular connecting piece 1613 is located in the opening of the third annular connecting piece 1615. In other words, the connecting seat 161 can be formed through the combination of the first annular connecting member 1611, the second annular connecting member 1613, and the third annular connecting member 1615. Of course, the connecting seat 161 including three connecting pieces 1611/1613/1615 is only an embodiment of the present invention, and is not a limitation of the scope of the present invention.

In an embodiment of the present invention, the edge of the connecting seat 161 has an annular protrusion 1617, wherein the radially inner area of the annular protrusion 1617 can form a groove, and the heating unit 11 can be placed in the groove of the connecting seat 161 The annular protrusion 1617 is located around the heating unit 11.

The fixing seat 163 can be a single component, and the edge of the fixing seat 163 has an annular protrusion 1631, wherein the annular protrusion 1631 of the fixing seat 163 can form a groove in the radial direction, and the connecting seat 161 can be arranged In the groove of the fixing seat 163, the annular protrusion 1631 of the fixing seat 163 is located around the connecting seat 161.

In an embodiment of the present invention, the upper surface and the lower surface of the first annular connecting member 1611 closest to the inner ring of the connecting seat 161 may be provided with a first annular sealing member 1612 and a second annular sealing member 1614, for example An O-ring, wherein the first ring seal 1612 on the upper surface of the first ring connector 1611 contacts the heating unit 11, and the second ring seal 1614 on the lower surface of the first ring connector 1611 contacts the fixing seat 163. In practical applications, the heating unit 11 and the fixing seat 163 are closely attached to the connecting seat 161 and/or the first annular connecting member 1611 due to the pressure difference in each area.

The first annular sealing member 1612 on the upper surface of the first annular connecting member 1611 is closer to or directly in contact with the heating unit 11. After a period of use, the first annular sealing member 1612 may be deteriorated. In order to avoid deterioration of the first annular seal 1612, at least one cooling channel 115 can be further provided above the first annular seal 1612, and the heating unit 11 and the first annular seal 1612 can be isolated through the cooling channel 115 to cool the first annular seal 1612. A ring seal 1612.

Please refer to FIG. 2, which is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus using a wafer carrier according to the present invention. As shown in the figure, the thin film deposition apparatus 20 mainly includes at least one wafer carrier plate 10 and a cavity 21. The cavity 21 includes an accommodating space 26, and the wafer carrier plate 10 is located in the accommodating space 26 and used To carry at least one wafer 12.

In an embodiment of the present invention, the thin film deposition device 20 may be a physical vapor deposition device, and a target 24 is disposed in the cavity 21, wherein the target 24 faces the wafer carrier 10 and/or the wafer 12. In an embodiment of the present invention, the cavity 21 may include a top plate 213 and a lower cavity 215, wherein the top plate 213 is connected to the lower cavity 215 through an insulating portion 217 to form an accommodating space 26 therebetween, and the target The material 24 is disposed on the top plate 213 and faces the wafer carrier 10 and/or the wafer 12.

The cavity 21 is provided with at least one air inlet 211, wherein the air inlet 211 is fluidly connected to the accommodating space 26 of the cavity 21, and is used to deliver a process gas to the accommodating space 26 for the deposition process. For example, the process gas can be It is an inert gas or a reactive gas. In addition, an air extraction port may be provided on the cavity 21, and the gas in the cavity 21 can be extracted through the pump through the air extraction port.

The ring member 25 is provided on the wafer carrier 10 and located around the wafer 12. The stopper 27 is disposed in the accommodating space 26 of the cavity 21 and located in the surrounding area of the wafer carrier tray 10. Specifically, one end of the stopper 27 is connected to the cavity 21, and the other end forms an opening. In the present invention In an embodiment, the end of the stop 27 that is not connected to the cavity 21 can form an annular flange 271, wherein the annular flange 271 is located around the opening of the stop 27, and the cover ring 29 can be arranged on the annular flange of the stop 27 271 on.

The cavity 21 may include an inlet and outlet 212 for conveying the wafer 12. The driving unit 28 can be connected to the support 17 and drive the wafer carrier 10 away from the stop 27 through the support 17, as shown in FIG. 2. Then, the wafer 12 can be placed on the wafer carrier 10 through the inlet and outlet 212 through the robot arm, and the wafer 12 carried by the wafer carrier 10 can be taken out of the cavity 21 by the robot arm through the inlet and outlet 212.

After the robot arm places the wafer 12 on the wafer carrier 10, the drive unit 28 can drive the wafer carrier 10 and the carried wafer 12 to move toward the stopper 27 through the support 17, so that the wafer carrier 10 The upper ring member 25 contacts the cover ring 29 on the stopper 27, and the stopper 27 and the cover ring 29 are arranged around the wafer 12, as shown in FIG. 3. The stopper 27, the cover ring 39, the wafer carrier 10, the wafer 12, and/or the ring member 25 divide the accommodating space 26 of the cavity 21 into two parts. The stopper 27, the cover ring 29, and the crystal The space between the circular carrier 10, the ring member 25 and/or the cavity 21 can be defined as a reaction space 261, and the target 24 and the wafer 12 are located in the reaction space 261.

During the deposition process, the heating unit 11 of the wafer carrier 10 heats the wafer 12 and applies a bias voltage to the top plate 213 and the wafer carrier 10 respectively. The inert gas in the reaction space 261 is due to the action of the high-voltage electric field. , And the formation of ionized inert gas. The ionized inert gas will be attracted by the bias voltage on the target 24 and bombard the target 24. The target atoms or molecules splashed from the target 24 will be attracted by the bias on the wafer carrier 10 and deposited on the wafer. The surface of 12.

Please refer to FIG. 1, the heating unit 11 and the conductive portion 15 of the wafer carrier 10 of the present invention are isolated by the insulating and heat conducting unit 13, wherein the alternating current of the heating coil 14 of the heating unit 11 does not pass It is output to the conductive portion 15 so that the conductive portion 15 can form a stable AC bias or DC bias, and can improve the quality of the film deposited on the surface of the wafer 12.

In the embodiments of the present invention, the physical vapor deposition apparatus is used as the embodiment of the invention, but the physical vapor deposition apparatus is not limited by the scope of the present invention. In practical applications, the wafer carrier 10 of the present invention can also be applied In a chemical vapor deposition apparatus or an atomic layer deposition apparatus, basically as long as the wafer carrier 10 of the thin film deposition apparatus needs to be heated and generates a bias, the wafer carrier 10 of the present invention is applicable.

The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of implementation of the present invention. That is to say, all the shapes, structures, features and spirits described in the scope of the patent application of the present invention are equivalently changed and changed. Modifications shall be included in the scope of the patent application of the present invention.

10: Wafer carrier tray

11: Heating unit

115: cooling channel

12: Wafer

13: Insulation and heat conduction unit

14: heating coil

141: The first heating coil

143: The second heating coil

15: Conductive part

161: Connecting Block

1611: The first ring connector

1612: first ring seal

1613: second ring connector

1614: second ring seal

1615: Third ring connector

1617: Ring bump

163: fixed seat

1631: Ring bump

17: Support

171: The first conductive unit

173: second conductive unit

175: Bias power supply

177: The first temperature sensing unit

179: The second temperature sensing unit

Claims (10)

A wafer carrier plate includes: at least one heating unit, including at least one heating coil, for heating the wafer carried by the wafer carrier plate; an insulating and heat conducting unit arranged on the heating unit; and a conductive part arranged on the heating unit On the insulating and heat-conducting unit, the conductive part is made of metal and used to carry and contact at least one wafer, wherein the conductive part is electrically connected to a bias power source to attract a plasma above the carrier plate, and the insulating and heat-conducting part The unit is located between the heating unit and the conductive part, and electrically isolates the heating unit and the conductive part; a connecting seat for carrying the heating unit, wherein a first ring shape is arranged between the connecting seat and the heating unit Seal; and a cooling channel located between the first annular seal and the heating unit, and used to isolate the heating unit and the first annular seal. The wafer carrier according to claim 1, wherein the heating coil includes a first heating coil and a second heating coil, and the second heating coil is located at the periphery of the first heating coil. The wafer carrier according to claim 2, comprising a plurality of temperature sensing units, and the first heating coil and the second heating coil are respectively used to heat a first area and a second area of the wafer carrier Area, and respectively measure the temperature of the first area and the second area of the wafer carrier through the temperature sensing unit. The wafer susceptor according to claim 1, comprising a support connected to the wafer susceptor, at least one first conductive unit is arranged in the support, and electrically connected to the bias power supply and the conductive part, the bias The power source forms a bias voltage on the conductive part through the first conductive unit. The wafer carrier according to claim 4, wherein the bias power source is an AC power source, and an AC bias voltage is formed on the conductive part via the conductive unit. The wafer carrier tray according to claim 4, including at least one second conductive unit located in the support and electrically connected to the heating coil. A thin film deposition device includes: a cavity including an accommodating space; a wafer carrier tray located in the accommodating space and used to carry at least one wafer, including: at least one heating unit, including at least one heating coil , Used to heat the wafer carried by the wafer carrier plate; a conductive part located above the heating unit, the conductive part is metal, and used to carry and contact at least one wafer, wherein the conductive part is electrically connected to a bias A voltage source to attract a plasma above the carrier plate; an insulating and thermally conductive unit, located between the heating unit and the conductive part, and used to isolate the heating unit and the conductive part; a connecting seat for carrying the heating unit , Wherein a first annular seal is provided between the connecting seat and the heating unit; a cooling channel is located between the first annular seal and the heating unit, and is used to isolate the heating unit from the first ring -Shaped seal; and at least one air inlet, fluidly connected to the accommodating space of the cavity, and used to deliver a process gas to the accommodating space. The thin film deposition apparatus according to claim 7, comprising a support member connected to the wafer carrier plate, at least one first conductive unit is disposed in the support member, and electrically connected to the bias power supply and the conductive part, the bias power supply The bias voltage is formed in the conductive part via the first conductive unit. The thin film deposition apparatus according to claim 8, comprising at least one second conductive unit located in the supporting member and electrically connected to the heating coil, and the heating coil includes a first heating coil and a second heating coil, the first heating coil The second heating coil is located at the periphery of the first heating coil. The thin film deposition apparatus according to claim 7, comprising a driving unit connected to the support, and the support is used to drive the wafer carrier to move.

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